CN108022834A - Monitor the method and structure of 3D gate oxidation layer process - Google Patents
Monitor the method and structure of 3D gate oxidation layer process Download PDFInfo
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- CN108022834A CN108022834A CN201711244384.1A CN201711244384A CN108022834A CN 108022834 A CN108022834 A CN 108022834A CN 201711244384 A CN201711244384 A CN 201711244384A CN 108022834 A CN108022834 A CN 108022834A
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- 238000000034 method Methods 0.000 title claims abstract description 152
- 230000003647 oxidation Effects 0.000 title claims abstract description 33
- 238000007254 oxidation reaction Methods 0.000 title claims abstract description 33
- 238000012544 monitoring process Methods 0.000 claims abstract description 343
- 238000012360 testing method Methods 0.000 claims abstract description 58
- 238000012797 qualification Methods 0.000 claims abstract description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 33
- 229910052760 oxygen Inorganic materials 0.000 claims description 33
- 239000001301 oxygen Substances 0.000 claims description 33
- 230000015556 catabolic process Effects 0.000 claims description 24
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 20
- 229920005591 polysilicon Polymers 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 19
- 230000005611 electricity Effects 0.000 claims description 9
- 238000010408 sweeping Methods 0.000 claims description 2
- 238000004458 analytical method Methods 0.000 abstract description 9
- 238000010276 construction Methods 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 7
- 238000012545 processing Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
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- 238000010835 comparative analysis Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
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- Insulated Gate Type Field-Effect Transistor (AREA)
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Abstract
The present invention provides a kind of method and structure of monitoring 3D gate oxidation layer process, which includes a pair of for monitoring one or more of 3D grid oxic horizons side wall, bottom surface, the first monitoring structure of corner, the second monitoring structure and the 3rd monitoring structure respectively.One or more of the step of this method includes the step of side wall technique of monitoring 3D grid oxic horizons, monitors the step of bottom surface technique of 3D grid oxic horizons and monitor the corner technique of 3D grid oxic horizons.By comparing two groups of electric parameters, when there is change in two groups of test results and its difference exceedes the droop scope limited, side wall, bottom surface or the corner technique for judging 3D grid oxic horizons are technique weak spot, and the technique for otherwise judging 3D grid oxic horizons is qualification.The present invention not only realizes on-line monitoring, but also also a saving engineering cost and the time of slice analysis, shortens the construction cycle, the effect for have at-once monitor, judging immediately.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, the method for more particularly to a kind of monitoring 3D gate oxidation layer process and
Structure.
Background technology
In the semiconductor device, MOS device includes the structure of the metal-oxide-semiconductor containing 3D grids.Fig. 1 is containing 3D grids
The cross-sectional view of MOS device.Please refer to Fig.1, the structure and generation type of metal-oxide-semiconductor are：Before grid oxic horizon 1 is grown
One hole, regrown gates oxide layer 1 and deposit polycrystalline silicon 2 are just etched by an extra light shield under the gate, formed
Metal-oxide-semiconductor with 3D grids 3.The MOS device only marked the title of structure related to the present invention, and other structures are this area
Known features.The grid oxic horizon 1 of the metal-oxide-semiconductor is stereochemical structure, when opening metal-oxide-semiconductor in 3 making alive of grid, not only in bulk
Polysilicon under form raceway groove, the side wall, bottom also in 3D grids 3 all form raceway groove, accelerate the transmission of electronics.It is different
Processing step respectively can have an impact 1 side wall of 3D grid oxic horizons, bottom or corner, but finally can all influence grid oxygen quality.
The method of common analysis grid oxygen mass defect is that to find technique weak spot by means such as slice analysis be in grid oxygen at present
Change layer side wall, bottom or corner technique, this can increase the cost of project analysis, and there are certain randomness for slice analysis.
The content of the invention
The technical problems to be solved by the invention are to overcome the above insufficient, there is provided one kind monitoring 3D grid oxic horizon works
The method and structure of skill, the technique that 3D grid oxic horizons are monitored on line, and find the weak spot of technique.
In order to solve the above technical problem, the present invention provides a kind of method of monitoring 3D gate oxidation layer process, including prison
The step of controlling the side wall technique of 3D grid oxic horizons, monitor the step of bottom surface technique of 3D grid oxic horizons and monitoring 3D grid oxygen
It is one or more than one kinds of in the step of changing the corner technique of layer；Wherein, the step of the side wall technique of 3D grid oxic horizons is monitored
Suddenly, using a pair of the first monitoring structure for being used to monitor 3D grid oxic horizon side walls, the first monitoring structure A and first is denoted as respectively
Monitoring structure B, tests at least one identical electric parameters in the first monitoring structure A and the first monitoring structure B, compares the
Some identical electric parameters in one monitoring structure A and the first monitoring structure B, when the first monitoring structure A and first is supervised
When the test result of electric parameters identical control structure B changes and its difference exceedes the droop scope limited
When, the side wall technique for judging 3D grid oxic horizons is technique weak spot, and the side wall technique for otherwise judging 3D grid oxic horizons is conjunction
Lattice；The step of monitoring the bottom surface technique of 3D grid oxic horizons, using a pair of the second prison for being used to monitor 3D grid oxic horizons bottom surface
Structure is controlled, is denoted as the second monitoring structure C and the second monitoring structure D respectively, tests the second monitoring structure C and the second monitoring structure D
In at least one identical electric parameters, compare some identical electricity in the second monitoring structure C and the second monitoring structure D
Performance parameter is learned, when the test result of electric parameters identical the second monitoring structure C and the second monitoring structure D changes
When and its difference exceed limit droop scope when, judge 3D grid oxic horizons bottom surface technique be technique weak spot, it is no
The bottom surface technique for then judging 3D grid oxic horizons is qualification；The step of monitoring the corner technique of 3D grid oxic horizons, using a pair
For monitoring the 3rd monitoring structure of 3D grid oxic horizon corners, the 3rd monitoring structure E and the 3rd monitoring structure F is denoted as respectively,
At least one identical electric parameters in the 3rd monitoring structure E and the 3rd monitoring structure F are tested, compare the 3rd monitoring structure
Some identical electric parameters in E and the 3rd monitoring structure F, when the 3rd monitoring structure E and the 3rd monitoring structure F are identical
The test result of electric parameters when changing and when its difference exceedes the droop scope limited, judge 3D grid
The corner technique of pole oxide layer is technique weak spot, and the corner technique for otherwise judging 3D grid oxic horizons is qualification.
Further, the method for monitoring 3D gate oxidation layer process provided by the invention, in monitoring 3D grid oxic horizons
In the step of side wall technique, bottom surface and the corner number phase of the 3D grids of the first monitoring structure A and the first monitoring structure B are set
It is the first monitoring structure during Deng, side wall not etc..
Further, the method for monitoring 3D gate oxidation layer process provided by the invention, in monitoring 3D grid oxic horizons
In the step of bottom surface technique, the side wall and corner number phase of the 3D grids of the second monitoring structure C and the second monitoring structure D are set
It is the second monitoring structure when not waited Deng, bottom surface.
Further, the method for monitoring 3D gate oxidation layer process provided by the invention, in monitoring 3D grid oxic horizons
In the step of corner technique, the bottom surface summation that sets the 3rd monitoring structure E and the 3D grids in the 3rd monitoring structure F is equal, side
Wall and corner number not etc. when be the 3rd monitoring structure.
Further, the method for monitoring 3D gate oxidation layer process provided by the invention, including two groups of 3D grid oxygen are set
The step of changing layer electrical testing structure；Two groups of 3D grid oxic horizon electrical testings structures include polysilicon layer, several 3D grid
Pole, active area 103, N-type source-drain electrode 104, p-type source-drain electrode 105, P type substrate 106, wherein two groups of 3D grid oxic horizons are electrical
3D grids specification in test structure is different；Set in one of which 3D grid oxic horizon electrical testing structures 3D grids as
M, the identical specification of each 3D grids is X × Y, and wherein M is the natural number more than 0, and X, Y are the positive number more than 0；
Setting 3D grids in another set 3D grid oxic horizon electrical testing structures, to be N number of, the specification of each 3D grids is identical
For Z × Z, wherein N is the natural number more than 0, and Z is the positive number more than 0；To X, Y, Z, M, N value, the first monitoring knot is respectively obtained
Structure, the second monitoring structure and the 3rd monitoring structure.
Further, the method for monitoring 3D gate oxidation layer process provided by the invention, including to X, Y, Z, M, N value,
The step of making X × Y=Z × Z, M=N, respectively obtaining the first monitoring structure A and the first monitoring structure B；To X, Y, Z, M, N value,
The step of making X+Y=2Z, M=N, respectively obtaining the second monitoring structure C and the second monitoring structure D；To X, Y, Z, M, N value, make X
=Z, Y=2Z, 2M=N, the step of respectively obtaining the 3rd monitoring structure E and the 3rd monitoring structure F.
Further, the method for monitoring 3D gate oxidation layer process provided by the invention, first monitoring structure, second
The electric parameters of monitoring structure and the 3rd monitoring structure include at least one in grid oxygen capacitance, breakdown voltage and leakage current
Kind；By the electric parameters that grid oxygen capacitance is obtained the step of 3D grids and substrate both ends add alternating voltage to survey electric current；It is logical
The step of crossing and sweep positive voltage from low to high in 3D grids, surveying source-drain electrode or substrate current obtains the electric property ginseng of breakdown voltage
Number；By the electric parameters that grid oxygen leakage current is obtained the step of grid adds cut-in voltage to survey grid current.
Further, the method for monitoring 3D gate oxidation layer process provided by the invention, monitors the side of 3D grid oxic horizons
In the step of wall technique, some identical electric parameters in the first monitoring structure A and the first monitoring structure B, refer to
The electric parameters of one monitoring structure A and the first monitoring structure B are one kind in grid oxygen capacitance, breakdown voltage, leakage current；
In the step of monitoring the bottom surface technique of 3D grid oxic horizons, some in the second monitoring structure C and the second monitoring structure D is identical
Electric parameters, refer to that the second monitoring structure C and the electric parameters of the second monitoring structure D are grid oxygen capacitance, hit
Wear one kind in voltage, leakage current；In the step of monitoring the corner technique of 3D grid oxic horizons, the 3rd monitoring structure E and the
Some identical electric parameters in three monitoring structure F, refer to the electricity of the 3rd monitoring structure E and the 3rd monitoring structure F
Performance parameter is one kind in grid oxygen capacitance, breakdown voltage, leakage current.
In order to solve the above-mentioned technical problem, the present invention also provides a kind of structure of monitoring 3D gate oxidation layer process, including
A pair is used to monitor the first monitoring structure of 3D grid oxic horizon side walls, a pair for monitoring the second of 3D grid oxic horizons bottom surface
Monitoring structure and a pair of one or more for being used to monitor in the 3rd monitoring structure of 3D grid oxic horizon corners；Described
One monitoring structure includes the first monitoring structure A and the first monitoring structure B, and second monitoring structure includes the second monitoring structure C
With the second monitoring structure D, the 3rd monitoring structure includes the 3rd monitoring structure E and the 3rd monitoring structure F.
Further, the structure of monitoring 3D gate oxidation layer process provided by the invention, including two groups of 3D grid oxygen are set
Change layer electrical testing structure, two groups of 3D grid oxic horizon electrical testings structures include polysilicon layer, several 3D grids, active
Area, N-type source-drain electrode, p-type source-drain electrode, P type substrate or N-type substrate, wherein in two groups of 3D grid oxic horizon electrical testing structures
3D grids specification it is different；Set bottom surface and the corner number of the 3D grids of the first monitoring structure A and the first monitoring structure B
Equal, side wall not etc. when be the first monitoring structure；Set the side wall of the 3D grids of the second monitoring structure C and the second monitoring structure D
Equal with corner number, bottom surface is the second monitoring structure when not waiting；Set in the 3rd monitoring structure E and the 3rd monitoring structure F
The bottom surface summations of 3D grids is equal, side wall and corner number not etc. when be the 3rd monitoring structure.
The method and structure of monitoring 3D gate oxidation layer process provided by the invention, by the side for monitoring 3D grid oxic horizons
The step of wall technique, judges whether the side wall technique of 3D grid oxic horizons is qualified, if there are technique weak spot；By monitoring 3D
The step of bottom surface technique of grid oxic horizon, judges whether the bottom surface technique of 3D grid oxic horizons is qualified, if weak there are technique
Point；The step of by the corner technique that monitors 3D grid oxic horizons, judge whether the corner technique of 3D grid oxic horizons is qualified, be
It is no that there are technique weak spot.The method and structure of monitoring 3D gate oxidation layer process provided by the invention have on line real-time monitoring
The effect of the technique of 3D grid oxic horizons, when performing whole monitoring process steps, can find 3D grid oxic horizon works immediately
The weak spot of skill is in side wall, bottom surface or corner, so as to not only realize on-line monitoring, but also also a saving the work of slice analysis
Cheng Chengben and time, the construction cycle is shortened, the effect for there is at-once monitor, judging immediately.
Brief description of the drawings
Fig. 1 is the cross-sectional view of the MOS device containing 3D grids；
The domain schematic diagram of first group of 3D grid oxic horizon electrical testing structure of Fig. 2-3 one embodiment of the invention；
Fig. 4-5 is the domain schematic diagram for second group of 3D grid oxic horizon electrical testing structure for inventing an embodiment；
Fig. 6 is the structure diagram of 3D grid oxic horizons electrical testing structure of the present invention.
Embodiment
The present invention is described in detail below in conjunction with the accompanying drawings：
The core of the present invention is to build the side walls of 3D grid oxic horizons, bottom surface, the process monitoring structure of corner, passes through test
The electric parameters such as grid oxygen capacitance, breakdown voltage or leakage current, compare two groups of electric parameters changing values, to judge 3D grid
Whether the technique of the side wall of pole oxide layer, bottom surface or corner is qualified.The technique weak spot of 3D grid oxic horizons is found with this.In order to
The technique for monitoring the 3D grid oxic horizons of 3D gate MOS devices, can test the electrical property such as grid oxygen capacitance, breakdown voltage, leakage current
Can parameter.When there is the change of grid oxygen capacitance, breakdown voltage, leakage current, judge to be specifically 3D grid oxic horizons for analysis
Side wall, the processing quality defect that occurs of bottom surface or corner, during processing quality defect for judging 3D grid oxic horizons, divide
The side wall of a pair of of grid oxic horizon, bottom surface, corner is not needed electrically to contribute different test structures.Grid oxygen in the present embodiment
For the abbreviation of grid oxic horizon.
Embodiment one
The present embodiment one provides a kind of method of monitoring 3D gate oxidation layer process, includes the side of monitoring 3D grid oxic horizons
The step of wall technique, the step for monitoring the step of bottom surface technique of 3D grid oxic horizons and monitoring the corner technique of 3D grid oxic horizons
It is one or more of rapid；Wherein,
The step of monitoring the side wall technique of 3D grid oxic horizons, is used to monitoring the of 3D grid oxic horizon side walls using a pair of
One monitoring structure, is denoted as the first monitoring structure A and the first monitoring structure B respectively, tests the monitoring knots of the first monitoring structure A and first
At least one identical electric parameters in structure B, it is identical to compare some in the first monitoring structure A and the first monitoring structure B
Electric parameters, when electric parameters identical the first monitoring structure A and the first monitoring structure B test result occur
During change and when its difference exceedes the droop scope limited, judge that the side wall technique of 3D grid oxic horizons is weak for technique
Point, the side wall technique for otherwise judging 3D grid oxic horizons is qualification；
The step of monitoring the bottom surface technique of 3D grid oxic horizons, is used to monitoring the of 3D grid oxic horizons bottom surface using a pair of
Two monitoring structures, are denoted as the second monitoring structure C and the second monitoring structure D respectively, test the monitoring knots of the second monitoring structure C and second
At least one identical electric parameters in structure D, it is identical to compare some in the second monitoring structure C and the second monitoring structure D
Electric parameters, when electric parameters identical the second monitoring structure C and the second monitoring structure D test result occur
During change and when its difference exceedes the droop scope limited, judge that the bottom surface technique of 3D grid oxic horizons is weak for technique
Point, the bottom surface technique for otherwise judging 3D grid oxic horizons is qualification；
The step of monitoring the corner technique of 3D grid oxic horizons, is used to monitoring the of 3D grid oxic horizon corners using a pair of
Three monitoring structures, are denoted as the 3rd monitoring structure E and the 3rd monitoring structure F respectively, test the monitoring knots of the 3rd monitoring structure E and the 3rd
At least one identical electric parameters, it is identical to compare some in the 3rd monitoring structure E and the 3rd monitoring structure F in structure F
Electric parameters, when electric parameters identical the 3rd monitoring structure E and the 3rd monitoring structure F test result occur
During change and when its difference exceedes the droop scope limited, judge that the corner technique of 3D grid oxic horizons is weak for technique
Point, the corner technique for otherwise judging 3D grid oxic horizons is qualification.
In above-mentioned steps, the first monitoring structure A and the first monitoring structure B, the second monitoring structure C and the second monitoring structure D,
The difference of 3rd monitoring structure E and the 3rd monitoring structure F respectively has a different droop scope.Wherein droop scope
Refer to droop value, and certain undulating value is taken in the range of the left and right of droop value.When its difference exceedes what is limited
Droop scope, is disparity range.
I.e. the present embodiment one can monitor the side wall technique of 3D grid oxic horizons, the bottom surface technique of 3D grid oxic horizons and 3D
In the corner technique of grid oxic horizon any one, it is any two kinds combination or three kinds.To judge 3D grid oxic horizons
Any one in the corner technique of side wall technique, the bottom surface technique of 3D grid oxic horizons and 3D grid oxic horizons or two kinds of prisons
Judgement promptly and accurately is made when controlling technique.
The present embodiment one by building the technique different monitoring structure of the side walls of 3D grid oxic horizons, bottom surface, corner respectively,
By testing the electric parameters such as grid oxygen capacitance, breakdown voltage or leakage current, compare two groups of electric parameters changing values, with
Judge whether the technique of the side walls of 3D grid oxic horizons, bottom surface or corner is qualified.The technique that 3D grid oxic horizons are found with this is thin
Weakness.On-line monitoring is not only realized, but also also a saving engineering cost and the time of slice analysis, shortens the construction cycle,
With at-once monitor, immediately the effect judged.
In the present embodiment one, bottom surface and the corner number of the 3D grids of the first monitoring structure A and the first monitoring structure B are set
Equal, side wall not etc. when be the first monitoring structure；Set the bottom surface of the 3D grids of the second monitoring structure C and the second monitoring structure D
, side wall equal with corner number not etc. when be the second monitoring structure；Set in the 3rd monitoring structure E and the 3rd monitoring structure F
The bottom surface summations of 3D grids is equal, side wall and corner number not etc. when be the 3rd monitoring structure.
As preferable embodiment, the present embodiment one is included using two groups of 3D grid oxic horizon electrical testing structures of setting
The step of to obtain the first monitoring structure, the second monitoring structure and the 3rd monitoring structure.It is specific as follows：Two groups of 3D grid oxic horizons
Electrical testing structure, is denoted as first group of 3D grid oxic horizon electrical testing structure respectively and second group of 3D grid oxic horizon is electrically surveyed
Structure is tried, including polysilicon layer, several 3D grids, active area 103, N-type source-drain electrode 104, p-type source-drain electrode 105, p-type lining
Bottom 106, wherein the 3D grids specification in two groups of 3D grid oxic horizon electrical testing structures is different.
Fig. 2-3 is the domain schematic diagram of first group of 3D grid oxic horizon electrical testing structure of the present embodiment one.Wherein Fig. 2
It is the domain schematic diagram for removing polysilicon layer, Fig. 3 is the domain schematic diagram covered with polysilicon layer.Please refer to Fig.2, Fig. 3, first
Group 3D grid oxic horizon electrical performance testing structures, including polysilicon layer 101,3D grids 102, active area 103, N-type source-drain electrode
104th, p-type source-drain electrode 105, P type substrate 106.Intersection region is M in parallel wherein between polysilicon layer 101 and active area 103
3D grids 102, the identical specification of each 3D grids is X × Y, and wherein M is the natural number more than 0, and wherein X, Y is big
In 0 positive number.I.e. the specification of 3D grids 102 is rectangular shape.Fig. 2 shows M 102 array of 3D grids row in parallel
Cloth forms 3D grid layers, due to the covering of polysilicon layer 101 in Fig. 3, has sheltered from 3D grids 102.First group of 3D gate oxidation
For layer electrical performance testing structure in P type substrate 106, active area 103 and 101 intersection region of polysilicon layer are 3D grids
Layer, M 3D grid 102 is set in this area array, and etches multiple 3D grid holes；N is injected in 104 region of N-type source-drain electrode
Type ion produces source-drain electrode in active area 103, and 105 region implanting p-type ion of p-type source-drain electrode is to pick out P type substrate 106.
Fig. 4-5 is the domain schematic diagram of second group of 3D grid oxic horizon electrical testing structure of the present embodiment one.Wherein Fig. 4
It is the domain schematic diagram for removing polysilicon layer, Fig. 5 is covered with the domain schematic diagram of polysilicon layer.Please refer to Fig.4, Fig. 5, second
Group 3D grid oxic horizon electrical performance testing structures, including polysilicon layer 201,3D grids 202, active area 203, N-type source-drain electrode
204th, p-type source-drain electrode 205, P type substrate 206.Intersection region is N number of in parallel wherein between polysilicon layer 201 and active area 203
3D grids 202, the identical specification of each 3D grids 202 is Z × Z, and wherein N is the natural number more than 0；Wherein Z is big
In 0 positive number.I.e. 202 people's specification of 3D grids is square shape.
Second group of 3D grid oxic horizon electrical performance testing structure of the present embodiment one and first group of 3D grid oxic horizons electricity
Learn performance test structure to compare, in addition to the specification of 3D grids differs, other structures are identical.Wherein 3D grids
Specification be 3D grid light shield pore sizes.
To two groups of 3D grid oxic horizon electrical performance testing structure values, i.e., to X, Y, Z, M, N value, according to setting first
The bottom surface of the 3D grids of monitoring structure A and the first monitoring structure B and corner number is equal, side wall not etc. when be the first monitoring structure
The step of, the step of making X × Y=Z × Z, M=N, respectively obtain the first monitoring structure A and the first monitoring structure B；This certain reality
Apply and specific value is not limited in example, can also the rule of equal, side wall not etc. be any according to the bottom surface of 3D grids and corner number
Carry out value.
To X, Y, Z, M, N value, according to the side wall of the 3D grids of setting the second monitoring structure C and the second monitoring structure D and
The step of corner number is equal, and bottom surface is the second monitoring structure when not waiting, makes X+Y=2Z, M=N, respectively obtains the second monitoring knot
The step of structure C and the second monitoring structure D；Specific value is not limited in certain the present embodiment, can also be according to the side wall of 3D grids
Any progress value of rule equal with corner number, that bottom surface is not waited.
To X, Y, Z, M, N value, the bottom surface of the 3D grids in setting the 3rd monitoring structure E and the 3rd monitoring structure F
Summation is equal, side wall and corner number not etc. when the step of being three monitoring structures, make X=Z, Y=2Z, 2M=N, respectively obtain
The step of 3rd monitoring structure E and the 3rd monitoring structure F.Specific value is not limited in certain the present embodiment, can also be according to 3D
The bottom surface summation of grid is equal, the rule of side wall and corner number not etc. is any carries out value.
In the present embodiment one electric parameters of first, second and third monitoring structure include grid oxygen capacitance, breakdown voltage and
At least one of leakage current；By obtaining grid oxygen capacitance the step of 3D grids and substrate both ends add alternating voltage to survey electric current
Electric parameters；The step of by sweeping positive voltage from low to high in 3D grids, surveying source-drain electrode or substrate current, is punctured
The electric parameters of voltage；By the electrical property that grid oxygen leakage current is obtained the step of grid adds cut-in voltage to survey grid current
Can parameter.
In the step of monitoring the side wall technique of 3D grid oxic horizons, certain in the first monitoring structure A and the first monitoring structure B
One identical electric parameters, the electric parameters for referring to the first monitoring structure A and the first monitoring structure B are grid oxygen
One kind in capacitance, breakdown voltage, leakage current.
In the step of monitoring the bottom surface technique of 3D grid oxic horizons, certain in the second monitoring structure C and the second monitoring structure D
One identical electric parameters, the electric parameters for referring to the second monitoring structure C and the second monitoring structure D are grid oxygen
One kind in capacitance, breakdown voltage, leakage current.
In the step of monitoring the corner technique of 3D grid oxic horizons, certain in the 3rd monitoring structure E and the 3rd monitoring structure F
One identical electric parameters, the electric parameters for referring to the 3rd monitoring structure E and the 3rd monitoring structure F are grid oxygen
One kind in capacitance, breakdown voltage, leakage current.
Such as first monitoring structure, the second monitoring structure, the 3rd monitoring structure are using breakdown voltage as same electrical property
When energy parameter judges the technique weak spot of 3D grid oxic horizons.If the first monitoring structure A is compared with the first monitoring structure B, first
The breakdown voltage drop of monitoring structure A is much lower and has exceeded error range, then illustrates that the side wall of 3D grid oxic horizons is thin for technique
Weakness；If the second monitoring structure D, compared with the second monitoring structure C, the breakdown voltage drop of the second monitoring structure D is much lower and super
Error range is crossed, then the bottom surface for illustrating 3D grid oxic horizons is technique weak spot；If the monitoring of the 3rd monitoring structure F and the 3rd is tied
Structure E is compared, its breakdown voltage drop is much lower and has exceeded error range, then the grid oxygen corner for illustrating 3D grid oxic horizons is work
Skill weak spot.Certainly, the present embodiment is not limited to three kinds of monitoring structures while uses same electric parameters, in every kind of monitoring knot
Any one electric parameters in grid oxygen capacitance, breakdown voltage, leakage current can be used to be judged in structure.It can also use
The combination of any two kinds of electric parameters can at most use three kinds of grid oxygen capacitance, breakdown voltage and leakage current electrical property
Energy parameter is compared judgement, to obtain accurate monitored results.
Embodiment two
Fig. 6 is the structure diagram of 3D grid oxic horizons electrical testing structure in the present embodiment two.It refer to Fig. 6, this reality
Apply example two and a kind of structure of monitoring 3D gate oxidation layer process, its process based on embodiment one, including a pair of of use are provided
In the first monitoring structure of monitoring 3D grid oxic horizon side walls, the first monitoring structure includes the monitoring of the first monitoring structure A and first
Structure B；A pair is used for the second monitoring structure for monitoring 3D grid oxic horizons bottom surface, and the second monitoring structure includes the second monitoring structure
C and the second monitoring structure D；A pair is used for the 3rd monitoring structure for monitoring 3D grid oxic horizon corners, and the 3rd monitoring structure includes
3rd monitoring structure E and the 3rd monitoring structure F.
- 5 are please referred to Fig.2, the structure of the monitoring 3D gate oxidation layer process of the present embodiment two, is set identical with embodiment one
Two groups of 3D grid oxic horizon electrical testing structures, if two groups of 3D grid oxic horizon electrical testings structures include polysilicon layer,
Dry 3D grids, active area, N-type source-drain electrode, p-type source-drain electrode, P type substrate, wherein two groups of 3D grid oxic horizon electrical testings
3D grids specification in structure is different；Set the bottom surface of the 3D grids of the first monitoring structure A and the first monitoring structure B and turn
Angle number is equal, side wall not etc. when be the first monitoring structure；Set the 3D grids of the second monitoring structure C and the second monitoring structure D
Side wall and corner number it is equal, bottom surface not wait when be the second monitoring structure；Set the 3rd monitoring structure E and the 3rd monitoring structure
The bottom surface summations of 3D grids in F is equal, side wall and corner number not etc. when be the 3rd monitoring structure.
The purpose of present embodiment is exactly by testing the grid oxygen capacitance of two groups of electric parameters test structures, breakdown potential
Pressure or the electric property such as leakage current, technological problems point is obtained in the side walls of 3D grid oxic horizons, bottom surface still by comparative analysis
Corner, so as to speculate particular problem processing step, is saved engineering cost and the time of slice analysis, shortens the construction cycle.
Active area, polysilicon in the present embodiment one, two can be not only bulk or more strips, small block array
Shape, as long as there are 3D grids in active area and polysilicon overlapping.In addition, active area can also be in N-type substrate, then source
Drain implanting p-type ion, and surrounding injects N-type Ion Extraction N shape substrates.I.e. the present invention is suitable for the PMOS containing 3D grids at the same time
Device and nmos device.
The invention is not restricted to above-mentioned embodiment, all various changes made within the spirit and scope of the present invention
Change, within protection scope of the present invention.
Claims (10)
- A kind of 1. method of monitoring 3D gate oxidation layer process, it is characterised in that the side wall work including monitoring 3D grid oxic horizons The step of skill, monitor 3D grid oxic horizons bottom surface technique the step of and monitoring 3D grid oxic horizons corner technique the step of in It is one or more than one kinds of；Wherein,The step of monitoring the side wall technique of 3D grid oxic horizons, using a pair of the first prison for being used to monitor 3D grid oxic horizon side walls Structure is controlled, is denoted as the first monitoring structure A and the first monitoring structure B respectively, tests the first monitoring structure A and the first monitoring structure B In at least one identical electric parameters, compare some identical electricity in the first monitoring structure A and the first monitoring structure B Performance parameter is learned, when the test result of electric parameters identical the first monitoring structure A and the first monitoring structure B changes When and its difference exceed limit droop scope when, judge 3D grid oxic horizons side wall technique be technique weak spot, it is no The side wall technique for then judging 3D grid oxic horizons is qualification；The step of monitoring the bottom surface technique of 3D grid oxic horizons, using a pair of the second prison for being used to monitor 3D grid oxic horizons bottom surface Structure is controlled, is denoted as the second monitoring structure C and the second monitoring structure D respectively, tests the second monitoring structure C and the second monitoring structure D In at least one identical electric parameters, compare some identical electricity in the second monitoring structure C and the second monitoring structure D Performance parameter is learned, when the test result of electric parameters identical the second monitoring structure C and the second monitoring structure D changes When and its difference exceed limit droop scope when, judge 3D grid oxic horizons bottom surface technique be technique weak spot, it is no The bottom surface technique for then judging 3D grid oxic horizons is qualification；The step of monitoring the corner technique of 3D grid oxic horizons, using a pair of the 3rd prison for being used to monitor 3D grid oxic horizon corners Structure is controlled, is denoted as the 3rd monitoring structure E and the 3rd monitoring structure F respectively, tests the 3rd monitoring structure E and the 3rd monitoring structure F In at least one identical electric parameters, compare some identical electricity in the 3rd monitoring structure E and the 3rd monitoring structure F Performance parameter is learned, when the test result of electric parameters identical the 3rd monitoring structure E and the 3rd monitoring structure F changes When and its difference exceed limit droop scope when, judge 3D grid oxic horizons corner technique be technique weak spot, it is no The corner technique for then judging 3D grid oxic horizons is qualification.
- 2. the method for monitoring 3D gate oxidation layer process as claimed in claim 1, it is characterised in that in monitoring 3D gate oxidations In the step of side wall technique of layer, bottom surface and the corner number of the 3D grids of the first monitoring structure A and the first monitoring structure B are set Equal, side wall not etc. when be the first monitoring structure.
- 3. the method for monitoring 3D gate oxidation layer process as claimed in claim 2, it is characterised in that in monitoring 3D gate oxidations In the step of bottom surface technique of layer, bottom surface and the corner number of the 3D grids of the second monitoring structure C and the second monitoring structure D are set Equal, side wall not etc. when be the second monitoring structure.
- 4. the method for monitoring 3D gate oxidation layer process as claimed in claim 3, it is characterised in that in monitoring 3D gate oxidations In the step of corner technique of layer, the bottom surface summation phase of the 3rd monitoring structure E and the 3D grids in the 3rd monitoring structure F is set It is the 3rd monitoring structure during Deng, side wall and corner number not etc..
- 5. the method for monitoring 3D gate oxidation layer process as claimed in claim 4, it is characterised in that including setting two groups of 3D grid The step of pole oxide layer electrical testing structure；Two groups of 3D grid oxic horizon electrical testings structures include polysilicon layer, several 3D grids, active area 103, N-type source-drain electrode 104, p-type source-drain electrode 105, P type substrate 106, wherein two groups of 3D grid oxic horizons 3D grids specification in electrical testing structure is different；It is a as M to set 3D grids in one of which 3D grid oxic horizon electrical testing structures, the specification phase of each 3D grids With being X × Y, wherein M is the natural number more than 0, and X, Y are the positive number more than 0；Set in another set 3D grid oxic horizon electrical testing structures that 3D grids is N number of, the specification phase of each 3D grids With being Z × Z, wherein N is the natural number more than 0, and Z is the positive number more than 0；To X, Y, Z, M, N value, the first monitoring structure, the second monitoring structure and the 3rd monitoring structure are respectively obtained.
- 6. the method for monitoring 3D gate oxidation layer process as claimed in claim 5, it is characterised in that includingTo X, Y, Z, M, N value, make X × Y=Z × Z, M=N, respectively obtain the first monitoring structure A's and the first monitoring structure B Step；To X, Y, Z, M, N value, make X+Y=2Z, M=N, respectively obtain the step of the second monitoring structure C and the second monitoring structure D Suddenly；To X, Y, Z, M, N value, make X=Z, Y=2Z, 2M=N, respectively obtain the 3rd monitoring structure E's and the 3rd monitoring structure F Step.
- 7. the method for monitoring 3D gate oxidation layer process as claimed in claim 5, it is characterised in that the first monitoring knot The electric parameters of structure, the second monitoring structure and the 3rd monitoring structure include in grid oxygen capacitance, breakdown voltage and leakage current At least one；By the electric property that grid oxygen capacitance is obtained the step of 3D grids and substrate both ends add alternating voltage to survey electric current Parameter；The step of by sweeping positive voltage from low to high in 3D grids, surveying source-drain electrode or substrate current, obtains the electricity of breakdown voltage Learn performance parameter；By the electric parameters that grid oxygen leakage current is obtained the step of grid adds cut-in voltage to survey grid current.
- 8. the method for monitoring 3D gate oxidation layer process as claimed in claim 7, it is characterised in that monitoring 3D grid oxic horizons Side wall technique the step of in, some identical electric parameters in the first monitoring structure A and the first monitoring structure B, are The electric parameters for referring to the first monitoring structure A and the first monitoring structure B are in grid oxygen capacitance, breakdown voltage, leakage current It is a kind of；In the step of monitoring the bottom surface technique of 3D grid oxic horizons, some in the second monitoring structure C and the second monitoring structure D Identical electric parameters, the electric parameters for referring to the second monitoring structure C and the second monitoring structure D are grid oxygen electricity One kind in appearance, breakdown voltage, leakage current；In the step of monitoring the corner technique of 3D grid oxic horizons, some in the second monitoring structure C and the second monitoring structure D Identical electric parameters, the electric parameters for referring to the 3rd monitoring structure E and the 3rd monitoring structure F are grid oxygen electricity One kind in appearance, breakdown voltage, leakage current.
- 9. a kind of structure of monitoring 3D gate oxidation layer process, it is characterised in that be used to monitor 3D grid oxic horizons including a pair First monitoring structure of side wall, a pair of the second monitoring structure for being used to monitor 3D grid oxic horizons bottom surface and a pair are used to monitor 3D One or more in 3rd monitoring structure of grid oxic horizon corner；First monitoring structure includes the first monitoring and ties Structure A and the first monitoring structure B, second monitoring structure include the second monitoring structure C and the second monitoring structure D, and the described 3rd Monitoring structure includes the 3rd monitoring structure E and the 3rd monitoring structure F.
- 10. the structure of monitoring 3D gate oxidation layer process as claimed in claim 9, it is characterised in that including setting two groups of 3D Grid oxic horizon electrical testing structure, two groups of 3D grid oxic horizon electrical testings structures include polysilicon layer, several 3D grid Pole, active area, N-type source-drain electrode, p-type source-drain electrode, P type substrate or N-type substrate, wherein two groups of 3D grid oxic horizon electrical testings 3D grids specification in structure is different；Set the bottom surface of the 3D grids of the first monitoring structure A and the first monitoring structure B and turn Angle number is equal, side wall not etc. when be the first monitoring structure；Set the 3D grids of the second monitoring structure C and the second monitoring structure D Bottom surface and corner number is equal, side wall not etc. when be the second monitoring structure；Set the 3rd monitoring structure E and the 3rd monitoring structure The bottom surface summations of 3D grids in F is equal, side wall and corner number not etc. when be the 3rd monitoring structure.
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