CN108017059A - It is used to prepare the heat carrier and reactor for polycrystalline silicon of polysilicon - Google Patents
It is used to prepare the heat carrier and reactor for polycrystalline silicon of polysilicon Download PDFInfo
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- CN108017059A CN108017059A CN201711313320.2A CN201711313320A CN108017059A CN 108017059 A CN108017059 A CN 108017059A CN 201711313320 A CN201711313320 A CN 201711313320A CN 108017059 A CN108017059 A CN 108017059A
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- heat carrier
- tungsten filament
- metal tube
- reactor
- polysilicon
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
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- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
Abstract
The present invention provides a kind of heat carrier for being used to prepare polysilicon, the heat carrier includes tungsten filament and the metal tube being connected with the tungsten filament, and the material of the metal tube includes at least one of tantalum, molybdenum and titanium.Heat carrier provided by the present invention for preparing polysilicon, it instead of the conventional silicon core used, the heat carrier can be that heat source is provided in reactor using conventional factory electricity consumption, high electrical breakdown and pre-heater is no longer needed to puncture the technology mode of silicon core, optimize the reactor time before operation, the production efficiency of polysilicon is improved, reduces the complexity and failure rate of electric control system.The present invention also provides a kind of reactor for polycrystalline silicon, including heat carrier, the heat carrier includes tungsten filament and the metal tube being connected with the tungsten filament, and the material of the metal tube includes at least one of tantalum, molybdenum and titanium.
Description
Technical field
The present invention relates to production of polysilicon equipment technical field, and in particular to a kind of heat carrier for being used to prepare polysilicon and
Reactor for polycrystalline silicon.
Background technology
At present, the polysilicon of high-purity is generally prepared using Siemens Method, Siemens Method is generally using silicon core as reaction
Heating source in device and the carrier of silicon material vapour deposition, but silicon core need to (breakdown voltage need to be through high electrical breakdown in reactor
More than 4.5KV, therefore the insulation to reactor has high requirements) or reactor in place pre-heater and furnace temperature is lifted temperature to about
800 DEG C, after reducing silicon core resistivity, puncture silicon core naturally under the action of follow current, silicon core is formed electric conductor fever,
The thermal energy of generation provides about 1000 DEG C of hot environment for inside reactor, makes to enter the hydrogen in reactor and is sent out with trichlorosilane
Angry phase reaction, constantly deposition become bar-shaped silicon material product to silicon wicking surface.
But the technology mode of high-voltage breakdown requires electric, equipment, component insulation etc. high；The technique of pre-add thermal breakdown
Mode consumes the time before more operation again, reduces effective production efficiency of reactor so that reacting furnace silicon material year
Yield reduces.It is therefore desirable to provide a kind of new heat carrier and consersion unit.
The content of the invention
To solve the above problems, the present invention provides a kind of heat carrier and reactor for polycrystalline silicon for being used to prepare polysilicon.
The heat carrier that the present invention is used to prepare polysilicon has good performance, available for the polysilicon for preparing high-quality, and can letter
Change preparation process.
First aspect present invention provides a kind of heat carrier for being used to prepare polysilicon, the heat carrier include tungsten filament and
The metal tube being connected with the tungsten filament, the material of the metal tube include at least one of tantalum, molybdenum and titanium.
Wherein, the tungsten filament connects to form reverse U shape or Π shapes with the metal tube.
Wherein, the heat carrier includes multistage tungsten filament and multistage metal tube, and the tungsten filament and the metal tube alternately connect.
Wherein, the ratio that the length of the tungsten filament accounts for the heat carrier total length is more than 0 and less than or equal to 80%.
Wherein, a diameter of 2.0-6.0mm of the tungsten filament.
Wherein, the outside diameter of the metal tube is 6.0-50mm.
Wherein, the end of the metal tube is equipped with socket, and the tungsten filament is inserted into removable with the metal tube in the socket
Connect with unloading.
The heat carrier for being used to prepare polysilicon that first aspect present invention provides, instead of the conventional silicon core used, this
The heat carrier of inventive embodiments is to provide heat source in reactor if using the conventional factory electricity consumption such as low pressure of 220V-2500V, no
The technology mode of high electrical breakdown of the voltage more than 4500V and pre-heater heating breakdown silicon core is needed again, before optimizing operation
Reactor time, improve the production efficiency of polysilicon, reduce the complexity and failure rate of electric control system.
Second aspect of the present invention provides a kind of reactor for polycrystalline silicon, including heat carrier, the heat carrier include tungsten filament and
The metal tube being connected with the tungsten filament, the material of the metal tube include at least one of tantalum, molybdenum and titanium.
Wherein, the bell jar and electrode unit that the reactor for polycrystalline silicon further includes base, is arranged on the base, institute
Stating electrode unit includes extending through the first electrode and second electrode that are arranged in the base, the first electrode with it is described
Tungsten filament is connected and the second electrode is connected together to galvanic circle with the metal tube.
Wherein, a diameter of 15cm-4m of the base, and/or the height of the reacting furnace is 20cm-3.5m.
Heat carrier is equipped with the reactor for polycrystalline silicon that second aspect of the present invention provides, the heat carrier instead of conventional make
Silicon core, it is no longer necessary to which the technology mode of high electrical breakdown and pre-heater heating breakdown silicon core, optimizes anti-before operation
Device time is answered, reduces the complexity and failure rate of electric control system.
To sum up, beneficial effect of the present invention includes the following aspects：
Heat carrier provided by the present invention for preparing polysilicon, instead of the conventional silicon core used, heat of the invention
Carrier can be that heat source is provided in reactor using conventional factory electricity consumption, it is no longer necessary to high electrical breakdown and pre-heater breakdown silicon
The technology mode of core, optimizes the reactor time before operation, improves the production efficiency of polysilicon, improves deposition heat
The anti-fusing of carrier, penetrometer resistance, reduce the complexity and failure rate of electric control system.
Brief description of the drawings
Fig. 1 is the structure diagram for the reactor for polycrystalline silicon that an embodiment of the present invention provides.
Embodiment
As described below is the preferred embodiment of the present invention, it is noted that for those skilled in the art
For, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications are also considered as
Protection scope of the present invention.
Referring to Fig. 1, first aspect of the embodiment of the present invention provides a kind of heat carrier 10 for being used to prepare polysilicon, it is described
Heat carrier 10 includes tungsten filament 11 and the metal tube 12 that be connected with the tungsten filament 11, the material of the metal tube 12 including tantalum, molybdenum and
At least one of titanium.
In embodiment of the present invention, the heat carrier 10 includes tungsten filament 11 and the metal tube 12 being connected with the tungsten filament 11,
Wherein using tungsten filament 11 as new fever material, its is conductive, emits light and heat under the action of electric current, can be reactor
The lasting thermal energy provided needed for reaction, and make the silicon material of vapor deposition reaction be deposited on tungsten filament, and keep excellent red hard
Property, prevent the silicon material of deposition in reactor from splitting the blowing out of rod failure or silicon rod the occurrence of falling stove.Transported in reactor process
Trip temperature and under the conditions of, will not occur in reactor heat phenomenon.The carrier deposited using metal tube 12 as silicon material, is silicon
The matrix adhered to during material deposition, (run time determines that silicon material is deposited on outside metal tube after the size needed for deposition is completed
Diameter), silicon material product can be retained by the method for chemical attack by deposition vehicle erosion removal.Silicon material will not be made
Into pollution, and effectively the silicon material of deposition is separated with it.
In the embodiment of the present invention, tungsten filament 11 and the metal tube 12 connection forms reverse U shape or Π shapes.In Fig. 1
Shown, tungsten filament 11 and the metal tube 12 connection forms reverse U shape.Alternatively, the metal tube can be linear or
Shaped form, such as metal tube may be substantially of L-shaped, U-shaped, Π shapes, so as to form U with the tungsten filament of a bit of linear
The heat carrier of shape, Π shapes.Alternatively, the tungsten filament can be linear or shaped form, and such as tungsten filament may be substantially of L-shaped, U
Shape, Π shapes, so as to the metal tubular of a bit of linear into U-shaped, the heat carrier of Π shapes.Such as indicated with 1, the heat
Carrier 10 includes the reverse U shape that a vertical curved substantially l-shaped connection of tungsten filament 11 of metal tube 12 and one is formed.
In the embodiment of the present invention, the heat carrier includes multistage tungsten filament and multistage metal tube, the tungsten filament and the metal
Pipe alternately connects.Such as the heat carrier can include two sections of tungsten filaments and two sections of metal tubes, tungsten filament and metal tube alternately connect, real
The connection of existing tungsten filament-metal tube-tungsten filament-metal tube.It is alternatively possible to by the metal tube of the tungsten filament of multistage and multistage with socket or
The form of slot is joined together to form reverse U shape or Π shapes.
It is understood that tungsten filament is connected with an electrode in the heat carrier, and metal tube is connected with another electrode,
So as to form a galvanic circle.
In the embodiment of the present invention, ratio that the length of the tungsten filament accounts for the heat carrier total length be more than 0 and be less than or
Equal to 80%.Here ratio refers to length (length the stretched) numerical value of the tungsten filament and the heat carrier total length
The ratio of the numerical value of (length stretched).Alternatively, the ratio is more than 0 and less than or equal to 50%.It is further optional
Ground, the ratio are more than 50% and less than or equal to 80%.Still optionally further, the ratio is 20%-80%.Further
Alternatively, the ratio is 60%-80%.For example, the length of the tungsten filament account for the ratio of the heat carrier total length for 1%,
2%th, 5%, 10%, 15%, 20%, 25%, 30%, 35%, 40%, 45%, 50%, 55%, 60%, 65%, 70%, 75%
Or 80%.
In the embodiment of the present invention, a diameter of 2.0-6mm of the tungsten filament.For example, a diameter of 2.0mm of the tungsten filament,
2.5mm, 3.0mm, 3.5mm, 4.0mm, 4.5mm, 5.0mm, 5.5mm or 6.0mm.
In the embodiment of the present invention, the outside diameter of the metal tube is 6.0-50mm.Alternatively, the metal tube is a diameter of
6.0-10mm.Alternatively, a diameter of 11-30mm of the metal tube.Alternatively, a diameter of 30-50mm of the metal tube.Example
Such as, a diameter of 6.0mm, 10mm, 15mm, 20mm, 25mm, 30mm, 35mm, 40mm, 45mm or 50mm of the metal tube.
In the embodiment of the present invention, the wall thickness of the metal tube is less than or equal to 2mm, alternatively, the wall of the metal tube
Thickness is less than or equal to 1mm.
In the embodiment of the present invention, conventional connection mode can be used to be connected the tungsten filament with the metal tube.It is optional
Ground, the end of the metal tube are equipped with socket, and the tungsten filament is inserted into detachably connected with the metal tube in the socket.Tool
Body, can first weld one piece of metallic plate by the metal duct occlusion, then on the metallic plate in the end of the metal tube
A socket is formed, the tungsten filament is inserted into detachably connected with the metal tube in the socket.
In the embodiment of the present invention, the height of the heat carrier accounts for the internal height for the reacting furnace for accommodating the heat carrier
50%-95%, can according to the height of the heat carrier is adjusted using the size of reacting furnace.When the tungsten filament and the gold
Belong to pipe to connect to form reverse U shape or Π shape heat carriers, the distance of the end of the opening of U-shaped or Π the shape heat carrier is
50mm-200mm.Alternatively, the distance of end is 50mm-80mm.Alternatively, the distance of end is 80mm-100mm.Alternatively,
The distance of end is 100mm-150mm.Alternatively, the distance of end is 150mm-200mm.Specifically, the distance of end can be with
For 50mm, 60mm, 70mm, 80mm, 90mm, 100mm, 110mm, 120mm, 130mm, 140mm, 150mm, 160mm, 170mm,
180mm, 190mm or 200mm.
In the embodiment of the present invention, the purity of the tungsten filament and the metal tube material is >=99.5%.
The heat carrier for being used to prepare polysilicon that first aspect of the embodiment of the present invention provides, instead of the silicon used in the past
Core, the heat carrier of the embodiment of the present invention can provide heat source using conventional factory electricity consumption for reactor is interior, it is no longer necessary to high voltage
Breakdown and the technology mode of pre-heater heating breakdown silicon core, optimize the reactor time before operation, improve polycrystalline
The production efficiency of silicon, improves the deposition anti-fusing of heat carrier, penetrometer resistance, reduce electric control system complexity and
Failure rate.
With reference to Fig. 1, embodiment of the present invention additionally provides a kind of reactor for polycrystalline silicon 100, including heat carrier 10, the heat
Carrier 10 includes tungsten filament 11 and the metal tube 12 being connected with the tungsten filament 11, and the material of the metal tube 12 includes tantalum, molybdenum and titanium
At least one of.
In the embodiment of the present invention, the reactor for polycrystalline silicon 100 further includes base 20, the clock being arranged on the base 20
Cover 30 and electrode unit 40, the electrode unit 40 include extending through the first electrode 41 that is arranged in the base 20 with
And second electrode 42, the first electrode 41 is connected with the tungsten filament 11 and the second electrode 42 and 12 phase of metal tube
Connect to form galvanic circle.
In embodiment of the present invention, the quantity of heat carrier is at least two in the reactor for polycrystalline silicon.Specifically, can root
According to the size of reacting furnace, the quantity of heat carrier is set.
In embodiment of the present invention, the quantity of the electrode unit is at least two, two electricity in each electrode unit
A heat carrier is respectively connected between pole, the electrode unit is evenly distributed in the base.Alternatively, the electrode unit
Arrange by the center of circle successively outward radial of the center of the base.
In embodiment of the present invention, two interelectrode distances are 50mm-200mm in each electrode unit.It is optional
Ground, distance is 50mm-80mm.Alternatively, distance is 80mm-100mm.Alternatively, distance is 100mm-150mm.Alternatively, away from
From for 150mm-200mm.Specifically, distance can be 50mm, 60mm, 70mm, 80mm, 90mm, 100mm, 110mm, 120mm,
130mm, 140mm, 150mm, 160mm, 170mm, 180mm, 190mm or 200mm.
In the embodiment of the present invention, the distance between the inner wall of the center of the heat carrier and the polycrystalline silicon reducing furnace bell jar is
More than or equal to 50mm.
In the embodiment of the present invention, the first electrode 41 and the connection mode and the second electrode 42 of the tungsten filament 11
It can be configured according to conventional connection mode with the connection mode of the metal tube 12 and such as be connected by way of welding, punching press
Connect.
In embodiment of the present invention, air inlet and exhaust outlet are additionally provided with the reactor for polycrystalline silicon.The air inlet and
The structure of exhaust outlet and position are conventional selection, do not do particular determination herein.
In embodiment of the present invention, a diameter of 15cm-4m of the base.Alternatively, a diameter of 15cm- of the base
20cm.Alternatively, a diameter of 1m-4m of the base.Still optionally further, a diameter of 15cm, 20cm of the base,
25cm、30cm、35cm、40cm、45cm、50cm、55cm、60cm、70cm、80cm、90cm、100cm、110cm、120cm、
150cm, 170cm, 190cm, 200cm, 220cm, 250cm, 270cm, 290cm, 300cm, 320cm, 350cm, 370cm or
400cm。
In embodiment of the present invention, the height of the reacting furnace is 20cm-3.5m.Alternatively, the height of the reacting furnace
For 20cm-50cm.Alternatively, the height of the reacting furnace is 1.0m-3.5m.Still optionally further, the height of the reacting furnace
For 20cm, 25cm, 30cm, 35cm, 40cm, 45cm, 50cm, 55cm, 60cm, 70cm, 80cm, 90cm, 100cm, 110cm,
120cm, 150cm, 170cm, 190cm, 200cm, 220cm, 250cm, 270cm, 290cm, 300cm, 320cm or 350cm.
The diameter of base and the height of reacting furnace can be selected according to actual conditions so that it is determined that anti-in the embodiment of the present invention
Answer the volume of stove.When the volume of reacting furnace is smaller, the reacting furnace of the lab scale before formal volume production polysilicon is may be used as, according to
The test result of obtained polysilicon product debugs response parameter in reacting furnace, prepares for follow-up volume production.
In embodiment of the present invention, the reactor for polycrystalline silicon can be connected with 220V-2500V commercial power, for polycrystalline
The production of silicon.
In embodiment of the present invention, the reactor for polycrystalline silicon is used to prepare electron level or solar-grade polysilicon.
Be equipped with heat carrier in the reactor for polycrystalline silicon that second aspect of the embodiment of the present invention provides, the heat carrier instead of with
The past silicon core used, it is no longer necessary to the technology mode of high electrical breakdown and pre-heater breakdown silicon core, before optimizing operation
Reactor time, reduces the complexity and failure rate of electric control system.
Embodiment 1
A kind of heat carrier for being used to prepare polysilicon, including one section of linear tungsten filament and one section of L-shaped being connected with tungsten filament
Tantalum pipe, tungsten filament connect to form reverse U shape with tantalum pipe, a diameter of 2.0mm of tungsten filament, and the outside diameter of tantalum pipe is 6.0mm, the wall thickness of tantalum pipe
For 1mm, the length of tungsten filament accounts for the 35% of heat carrier total length.
A kind of reactor for polycrystalline silicon, reactor for polycrystalline silicon is except including above-mentioned heat carrier, further including base, being arranged on bottom
Bell jar and electrode unit on seat, electrode unit include extending through the first electrode and second electrode being arranged in base,
First electrode is connected with tungsten filament and second electrode is connected together to galvanic circle with metal tube.A diameter of 15cm of base, instead
The height for answering stove is 20cm.
Embodiment 2
A kind of heat carrier for being used to prepare polysilicon, heat carrier include the tungsten filament of one section of L-shaped and one section be connected with tungsten filament
The titanium tube of linear, tungsten filament and titanium tube connect to form reverse U shape, a diameter of 6.0mm of tungsten filament, and the outside diameter of titanium tube is 50mm, titanium
The wall thickness of pipe is 2mm, and the length of tungsten filament accounts for the 65% of heat carrier total length.
A kind of reactor for polycrystalline silicon, reactor for polycrystalline silicon is except including above-mentioned heat carrier, further including base, being arranged on bottom
Bell jar and electrode unit on seat, electrode unit include extending through the first electrode and second electrode being arranged in base,
First electrode is connected with tungsten filament and second electrode is connected together to galvanic circle with titanium tube.A diameter of 4m of base, reacting furnace
Height be 3.5m.
Embodiment 3
A kind of heat carrier for being used to prepare polysilicon, heat carrier include one section of linear tungsten filament and one section be connected with tungsten filament
The molybdenum tube of L-shaped, tungsten filament and molybdenum tube connect to form reverse U shape, a diameter of 3.0mm of tungsten filament, and the outside diameter of molybdenum tube is 20mm, tantalum pipe
Wall thickness is 1mm, and the length of tungsten filament accounts for the 20% of heat carrier total length.
A kind of reactor for polycrystalline silicon, reactor for polycrystalline silicon is except including above-mentioned heat carrier, further including base, being arranged on bottom
Bell jar and electrode unit on seat, electrode unit include extending through the first electrode and second electrode being arranged in base,
First electrode is connected with tungsten filament and second electrode is connected together to galvanic circle with molybdenum tube.A diameter of 2m of base, reacting furnace
Height be 2m.
Embodiment described above only expresses the several embodiments of the present invention, its description is more specific and detailed, but simultaneously
Therefore the limitation to the scope of the claims of the present invention cannot be interpreted as.It should be pointed out that for those of ordinary skill in the art
For, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to the guarantor of the present invention
Protect scope.Therefore, the protection domain of patent of the present invention should be determined by the appended claims.
Claims (10)
- A kind of 1. heat carrier for being used to prepare polysilicon, it is characterised in that the heat carrier include tungsten filament and with the tungsten filament The metal tube of connection, the material of the metal tube include at least one of tantalum, molybdenum and titanium.
- 2. the heat carrier as claimed in claim 1 for being used to prepare polysilicon, it is characterised in that the tungsten filament and the metal tube Connection forms reverse U shape or Π shapes.
- 3. the heat carrier as claimed in claim 1 for being used to prepare polysilicon, it is characterised in that the heat carrier includes multistage tungsten Silk and multistage metal tube, the tungsten filament and the metal tube alternately connect.
- 4. the heat carrier as claimed in claim 1 for being used to prepare polysilicon, it is characterised in that the length of the tungsten filament accounts for described The ratio of heat carrier total length is more than 0 and less than or equal to 80%.
- 5. the heat carrier as claimed in claim 1 for being used to prepare polysilicon, it is characterised in that a diameter of 2.0- of the tungsten filament 6.0mm。
- 6. the as claimed in claim 1 heat carrier for being used to prepare polysilicon, it is characterised in that the outside diameter of the metal tube is 6.0-50mm。
- 7. the heat carrier as claimed in claim 1 for being used to prepare polysilicon, it is characterised in that the end of the metal tube is equipped with Socket, the tungsten filament are inserted into detachably connected with the metal tube in the socket.
- 8. a kind of reactor for polycrystalline silicon, it is characterised in that including heat carrier, the heat carrier includes tungsten filament and connects with the tungsten filament The metal tube connect, the material of the metal tube include at least one of tantalum, molybdenum and titanium.
- 9. reactor for polycrystalline silicon as claimed in claim 8, it is characterised in that the reactor for polycrystalline silicon further includes base, sets Put bell jar and electrode unit on the base, the electrode unit includes extending through the be arranged in the base One electrode and second electrode, the first electrode is connected with the tungsten filament and the second electrode is connected with the metal tube with Form galvanic circle.
- 10. reactor for polycrystalline silicon as claimed in claim 9, it is characterised in that a diameter of 15cm-4m of the base, and/or The height of the reacting furnace is 20cm-3.5m.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711313320.2A CN108017059A (en) | 2017-12-12 | 2017-12-12 | It is used to prepare the heat carrier and reactor for polycrystalline silicon of polysilicon |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711313320.2A CN108017059A (en) | 2017-12-12 | 2017-12-12 | It is used to prepare the heat carrier and reactor for polycrystalline silicon of polysilicon |
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| CN108017059A true CN108017059A (en) | 2018-05-11 |
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| CN201711313320.2A Pending CN108017059A (en) | 2017-12-12 | 2017-12-12 | It is used to prepare the heat carrier and reactor for polycrystalline silicon of polysilicon |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109250720A (en) * | 2018-11-15 | 2019-01-22 | 新疆大全新能源股份有限公司 | Reduction furnace |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5327454A (en) * | 1989-11-04 | 1994-07-05 | Komatsu Electronic Metlas Co., Inc. | Bridge for connecting cores in a manufacturing equipment of polycrystal silicon |
| CN101389785A (en) * | 2006-05-22 | 2009-03-18 | 韩国化学研究院 | Methods for preparation of high-purity polysilicon rods using a metallic core means |
| CN101405437A (en) * | 2006-05-11 | 2009-04-08 | 韩国化学研究院 | Apparatus and methods for preparation of high-purity silicon rods using mixed core means |
| CN101966992A (en) * | 2009-07-28 | 2011-02-09 | 王春龙 | Polysilicon reduction furnace |
-
2017
- 2017-12-12 CN CN201711313320.2A patent/CN108017059A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5327454A (en) * | 1989-11-04 | 1994-07-05 | Komatsu Electronic Metlas Co., Inc. | Bridge for connecting cores in a manufacturing equipment of polycrystal silicon |
| CN101405437A (en) * | 2006-05-11 | 2009-04-08 | 韩国化学研究院 | Apparatus and methods for preparation of high-purity silicon rods using mixed core means |
| CN101389785A (en) * | 2006-05-22 | 2009-03-18 | 韩国化学研究院 | Methods for preparation of high-purity polysilicon rods using a metallic core means |
| CN101966992A (en) * | 2009-07-28 | 2011-02-09 | 王春龙 | Polysilicon reduction furnace |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109250720A (en) * | 2018-11-15 | 2019-01-22 | 新疆大全新能源股份有限公司 | Reduction furnace |
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