CN108010878A - The manufacture method of transistor display panel and the ground slurry for being used in this method - Google Patents

The manufacture method of transistor display panel and the ground slurry for being used in this method Download PDF

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Publication number
CN108010878A
CN108010878A CN201711056935.1A CN201711056935A CN108010878A CN 108010878 A CN108010878 A CN 108010878A CN 201711056935 A CN201711056935 A CN 201711056935A CN 108010878 A CN108010878 A CN 108010878A
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CN
China
Prior art keywords
ground slurry
dielectric film
acid
grinding
weight
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201711056935.1A
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Chinese (zh)
Inventor
秋秉权
朴珍亨
姜秉薰
金光淑
裴俊和
曹雨辰
赵玹辰
千俊赫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ub Material Co Ltd
Sumsung Display Co Ltd
Samsung Display Co Ltd
Original Assignee
Ub Material Co Ltd
Samsung Display Co Ltd
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Publication date
Application filed by Ub Material Co Ltd, Samsung Display Co Ltd filed Critical Ub Material Co Ltd
Publication of CN108010878A publication Critical patent/CN108010878A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate

Abstract

This disclosure relates to a kind of manufacture method of transistor display panel and the ground slurry for being used in this method.One embodiment includes the steps：Semiconductor layer is formed on substrate；The semiconductor layer is patterned and forms active layer；Form the first dielectric film for covering the substrate and the active layer；Grind first dielectric film and exposure described in have edge layer；Formed and cover first dielectric film and second dielectric film for having edge layer, wherein, grind first dielectric film and exposure described in there is the step of edge layer to be performed using ground slurry, the ground slurry includes polishing particles, dispersant, dispersion stabilizer, non-ionic grinds inhibitor and pH adjusting agent.

Description

The manufacture method of transistor display panel and the ground slurry for being used in this method
Technical field
The present invention relates to a kind of manufacture method of transistor display panel and the ground slurry for being used in this method.
Background technology
Substrate comprising transistor in plasma display system, liquid crystal display device or shines aobvious in transistor liquid crystal display device Among showing device etc., it is utilized as the means of the drive circuit for embodying each pixel operation for making display device.
Above-mentioned transistor includes the active layer being formed on substrate and for covering the exhausted of the substrate and active layer Velum.In the depositing operation of this dielectric film, the upper side and the dielectric film of covering substrate of the dielectric film of active layer are covered There is thickness difference, i.e. step difference between upper side.As described above, if dielectric film has step difference, it is formed on dielectric film The threshold voltage distribution (threshold voltage distribution) of grid can increase, therefore transistor display panel Characteristic can reduce.
The content of the invention
Embodiment of the disclosure is aimed to provide and a kind of can shown by removing the step difference of dielectric film to improve transistor The manufacture method of the transistor display panel of the display quality of plate and the ground slurry being used in this method.
The steps may include according to the manufacture method of the transistor display panel of an embodiment of the disclosure：On substrate Form semiconductor layer；The semiconductor layer is patterned and forms active layer；Formed and cover the substrate and described active First dielectric film of layer；Grind first dielectric film and exposure described in have edge layer；Formed and cover first dielectric film and institute State the second dielectric film of edge layer, also, grind first dielectric film and exposure described in there is the step of edge layer to utilize grinding Slurry performs, and the ground slurry includes polishing particles, dispersant, dispersion stabilizer, non-ionic grinding inhibitor and pH tune Save agent.
The step of forming first dielectric film can perform as follows：First dielectric film is set to include described in covering The Part I of substrate and the Part II for covering the active layer.
The step of grinding first dielectric film and exposing the active layer can perform as follows：Make described first The ratio between the grinding rate divided and the grinding rate of the Part II are 1:Less than 5.
The step of grinding first dielectric film and exposing the active layer can perform as follows：Make described first exhausted Velum and the active layer have identical thickness.
Here, the active layer and second dielectric film can be contacted directly.
According to the ground slurry of an embodiment of the disclosure, the manufacture method of the transistor display panel is used in, can be wrapped Include：Polishing particles；At least one in dispersant, including anionic macromolecule, cationic high-molecular, carboxylic acid and amino acid Kind；Dispersion stabilizer, including the organic acid with carboxyl；Non-ionic grinding inhibitor；And pH adjusting agent.
The polishing particles can be selected from by wet type ceria, dry type ceria, silica, aluminium oxide, oxygen Change one or more of group of zirconium and titanium dioxide composition.
The crystal structure of the polishing particles can be that polyhedron (polyhedral) structure or corner are round and smooth (round) Structure.
The average grain diameter of the polishing particles can be 40nm to 150nm.
The content of the polishing particles can account for 0.1 weight % to 10 weight % relative to ground slurry overall weight.
The anionic macromolecule can be selected from by oxalic acid, citric acid, polysulfonate acid, polyacrylic acid, polymethyl One or more of group of acid, their copolymer and its salt composition.
The content of the dispersant can account for 0.003 weight % to 0.06 weight % relative to ground slurry overall weight.
The dispersion stabilizer can be in the group being made of neutral amino acid, acidic amino acid and basic amino acid More than one, the neutral amino acid includes at least one of alanine, glycine, tyrosine and valine, the acid Property include at least one of aspartic acid and glutamic acid, the basic amino acid includes at least one in citric acid and lysine Kind.
The content of the dispersion stabilizer can account for 0.0004 weight % to 0.008 weight relative to ground slurry overall weight Measure %.
The non-ionic grinding inhibitor can be selected from by including polysorbate, octyl phenol polyethers, polyethylene glycol ten Eight alkyl ethers, nonyl phenol ethoxylate, Emulsifier EL-60, ethylene oxide, glycerol ethoxylate, Octylphenoxy gather Ethyleneoxy ethanol, nonylphenol polyoxyethylene ether, Dinonylphenol Polyoxyethylene Ether, Polyethylene Glycol Bisglycidyl Ether, ethoxy are fine In the group for tieing up element, polyvinylpyrrolidone, polyacrylamide and polyethylene glycol propane diols-polyethyleneglycol block copolymer More than one.
The content of the non-ionic grinding inhibitor can account for 0.0002 weight % relative to the weight of ground slurry entirety To 0.004 weight %.
The pH adjusting agent can be selected from one or more of group being made of nitric acid, acetic acid and phosphoric acid.
The pH value of the ground slurry can be 4 to 8.
The ground slurry grinds dielectric film, and the dielectric film covering includes the active layer of polysilicon.
Brief description of the drawings
Fig. 1 to Fig. 6 is the figure of the manufacture method for the transistor display panel for sequentially showing the embodiment according to the disclosure.
Fig. 7 and Fig. 8 is to be exemplarily illustrated the grinding included according to the ground slurry of an embodiment of the disclosure respectively The figure of the crystal structure of particle.
Fig. 9 is shown using the ground slurry measurement manufactured according to embodiment 1 to 4 and comparative example 1 to 2 for oxidation The figure of the result of the grinding rate of silicon fiml and polysilicon film.
Figure 10 is the ground slurry measurement pin shown using being manufactured according to embodiment 2, embodiment 5 to 7 and comparative example 1 To the figure of the result of the grinding rate of silicon oxide film and polysilicon film.
Figure 11 is the figure for showing the abrasive characteristic evaluation result for the ground slurry manufactured according to embodiment 2.
Figure 12 is the figure for showing to be ground the result of evaluating characteristics according to embodiment 7 for the ground slurry manufactured.
Figure 13 is the figure for showing to be ground the result of evaluating characteristics according to reference example 1 for the ground slurry manufactured.
Figure 14 is the figure for showing to be ground the result of evaluating characteristics according to reference example 2 for the ground slurry manufactured.
Symbol description
110：Substrate 120：Cushion
130：Semiconductor layer 131：Active layer
141：First dielectric film 142：Second dielectric film
51：Ground slurry
Embodiment
Hereinafter, the embodiment of the present invention is described in detail referring to the drawings, so that in the technical field of the invention Personnel with basic knowledge can easily implement.The present invention can be implemented as a variety of different forms, and be not limited to Embodiment described herein.In order to clearly state the present invention, the part unrelated with explanation, Er Qie are eliminated in attached drawing Identical reference numeral is imparted in entire disclosure to same or similar inscape.
In addition, for convenience of description, to the size of each composition and thickness that are shown in attached drawing with arbitrary size and thickness Degree is shown, therefore the present invention is not necessarily limited to the size and thickness of diagram.In the accompanying drawings, in order to clearly show Multiple layers and region and enlargedly show thickness.Moreover, in the accompanying drawings, for convenience of description, exaggerate show a part of layer and The thickness in region.
In addition, when mention layer, film, region, plate when part be located at another part " on " or " on " when, it includes position Situation in " the adjacent top " of another part, moreover, is additionally included in and there are other parts therebetween.Phase Instead, when mention certain a part be located at another part " adjacent top " when, its represent centre without other parts situation.This Outside, when mentioning positioned at part " on " or " on " as benchmark, its represent positioned at the top of the part as benchmark or Lower part, and do not necessarily mean that along the opposite direction of gravity direction and be located at reference part " on " or " on ".
Throughout the specification, recorded unless there are clearly opposite, otherwise when mentioning some part " including (including) " During a certain inscape, it is meant that other inscapes can also be included, and be not excluded for other inscapes.
In addition, throughout the specification, when mentioning " in plane ", it represents the situation of the object part from top, When mentioning " on section ", it represents the vertically situation of the section of cutting object part from sidepiece.
The manufacture method of transistor display panel
An embodiment of the manufacture method of transistor display panel is explained referring to figs. 1 to Fig. 6.
Fig. 1 to Fig. 6 is the figure of the manufacture method for the transistor display panel for sequentially showing the embodiment according to the disclosure.
As shown in Figure 1, cushion 120 and semiconductor layer 130 are sequentially formed on substrate 110.The semiconductor layer 130 may include polysilicon (Polycrystalline silicon).
Semiconductor layer 130 is carried out after non-crystalline silicon (amorphous silicon) layer is formed using laser crystallizing technique Crystallize and formed.Amorphous silicon layer can for example pass through Low Pressure Chemical Vapor Deposition, aumospheric pressure cvd method, plasma Body enhancing chemical vapour deposition technique (plasma enhanced chemical vapor deposition), sputtering (sputtering) formed the methods of method, vacuum deposition method (vacuum evaporation).
Afterwards, as shown in Fig. 2, the methods of passing through photoetching process patterns the semiconductor layer 130 of Fig. 1, so that shape Into the active layer 131 with first thickness h1, and form the first dielectric film 141 of covering active layer 131 and cushion 120.
Active layer 131 includes the raceway groove 131a by above-mentioned crystallization processes formation, is located at the both sides of raceway groove 131a respectively Source region 131b and drain region 131c.
First dielectric film 141 has second thickness h2.
First thickness h1 be defined as from the upper side 21 of cushion 120 untill the upper side 31 of active layer 131 most Short distance.In addition, second thickness h2 is defined as the upper side 41 from the dielectric film of upper side 21 to the first 141 of cushion 120 Untill beeline.In fig. 2, second thickness h2 is formed as being greater than or equal to first thickness h1.
First dielectric film 141 may include silica (SiOx) or silicon nitride (SiNx).Here, in the first dielectric film 141 with The overlapping part of active layer 131 forms protuberance 141a, and the variable thickness of the first dielectric film 141 in protuberance 141a is thick For the thickness corresponding to first thickness h1.Therefore, the upper side of the first dielectric film 141 can have step difference.
Specifically, the upper side 41 of the first dielectric film 141 includes the Part I in the region as covering cushion 120 The 41A and Part II 41B as overlapping with active layer 131 and covering active layer 131 region.
Afterwards, process is ground as illustrated in fig. 3.
Grinding process can be for example utilized for carrying out chemical mechanical grinding (CMP：Chemical Mechanical Polishing) lapping device of technique and perform.
With reference to Fig. 3, lapping device includes by rotating and the grind section 50 of grinding object thing and for adjusting described grind The grinding adjustment portion (not shown) of the rotary speed in mill portion 50.Grind section 50 includes the first tablet 20 and the second tablet 30. Configure the object of grinding in need on two tablets 30, and the first tablet 20 and the second tablet 30 it is mutually rotating and to being located in The surface of object between them is ground.At this time, using nozzle etc. ground slurry 51 is supplied to the surface of object.Have The specific constituent for closing ground slurry is explained below.
In Fig. 3, the object to be ground is that the first dielectric film 141 for being laminated on substrate 110 has step difference Upper side.That is, the ground slurry 51 according to a foregoing embodiment is coated on the first dielectric film 141, and utilizes lapping device Planarize the first dielectric film 141.
At this time, the grinding rate of Part I 41A in the upper side of the first dielectric film 141 and the grinding of Part II 41B The ratio between rate can be 1:Less than 5.More specifically, the ratio between the grinding rate of Part I 41A and the grinding rate of Part II 41B can To be 1:20 to 1:5 or 1:15 to 1:6.
In the case where the ratio between grinding rate of Part I 41A and Part II 41B meets above range, can significantly contract The milling time that the short step difference for removing the first dielectric film 141 is consumed, and can improve and perform the first of grinding process The surface evenness of dielectric film 141.
Grinding process planarizes the first dielectric film 141, and performs to the top of active layer 131 as shown in Figure 4 Untill face 31 exposes.
With reference to Fig. 4, the second thickness h3 of first dielectric films 141 of the first thickness h1 of active layer 131 with being etched is identical, Therefore it can learn that the step difference of the upper side of the first dielectric film 141 is removed.
That is, in the grinding process of the disclosure, using the ground slurry 51 according to an embodiment, so if passing through grinding First dielectric film 141 and expose the upper side 31 of active layer 131, then upper side 31 can be used as grinding stopper film play function, from And the grinding process of the first dielectric film 141 will be stopped.Therefore, it is possible to be readily removable the step difference of the first dielectric film 141, and Hereby it is possible to improve the surface evenness of the first dielectric film 141.
Active layer 131 upper side 31 have it is hydrophilic in the case of, the remaining abrasive grains after grinding process Son etc. may be adsorbed easily.But ground as described above by using the ground slurry 51 according to an embodiment to perform In the case of grinder sequence, being formed on active layer 131 has hydrophobic protective film, therefore can also prevent by residual abrasive grains Pollution caused by the absorption of son etc..
Afterwards, as shown in figure 5, forming the second dielectric film 142 of the first dielectric film 141 of covering and active layer 131, and Grid 155 is formed on second dielectric film 142.
Grid 155 can be overlapping with the raceway groove 131a of active layer 131 and be arranged.In addition, grid 155 can include copper (Cu), copper alloy, aluminium (Al) and the metal film of any one in aluminium alloy and including any in molybdenum (Mo) and molybdenum alloy The multiple film that a kind of metal film is laminated and is formed.
The first dielectric film 141 is planarized and is eliminated step difference in the disclosure, therefore the threshold value of grid 155 can be reduced Voltage's distribiuting, hereby it is possible to easily embody high-resolution transistor display panel.
Fig. 6 is the profile of the transistor display panel according to an embodiment manufactured according to Fig. 1 to Fig. 5.
As shown in fig. 6, interlayer dielectric 160 is formed on 155 and second dielectric film 142 of grid.Also, in layer insulation Formation and the source region 131b and drain region 131c of active layer 131 source electrode 176 being connected respectively and drain electrode 177 on film 160, so as to complete Including grid 155, active layer 131, source electrode 176 and the transistor TR of drain electrode 177.Also, formation covering interlayer dielectric 160, Source electrode 176 and the protective film 180 of drain electrode 177.The pixel region 710 being connected with drain electrode 177 is formed on protective film 180, so that Complete transistor display panel.
Then, the ground slurry according to an embodiment of the manufacture method to being used in the transistor display panel is said It is bright.
Ground slurry
Polishing particles, dispersant, dispersion stabilizer, non-ionic grinding suppression may include according to the ground slurry of an embodiment Preparation and pH adjusting agent.
Ground slurry in the disclosure is used in the manufacture method of the transistor display panel according to an above-mentioned embodiment.Especially It, can be used in the planarization process of the dielectric film for active layer of the covering comprising polysilicon.
(1) polishing particles
In the disclosure, polishing particles can for example include wet type ceria (wet ceria), dry type ceria (dry ceria), silica (silica), aluminium oxide (alumina), zirconium oxide (zirconia), titanium dioxide (titania) metal oxide such as.Above-mentioned substance separately can be used or combined therein two or more and use.
In the disclosure, the polishing particles can be wet type ceria.
In figures 7 and 8, the TEM image of the crystal structure for wet type ceria particles is schematically illustrated.Institute The crystal structure for stating wet type ceria particles can be for example polyhedron (polyhedral) structure as shown in Figure 7, also may be used To be round edge shape (round) shape cubic structure as shown in Figure 8.Specifically, polyhedron (polyhedral) crystal structure has Have a relatively sharp keen shape, and its corner bow (curved) of round edge shape (round) cubic structure and can have and be close to round Shape.The crystal structure of this ceria particles can be measured by X-ray diffraction (XRD) to be analyzed.
The average grain diameter of the polishing particles for example can be about 40nm to 150nm.More specifically, the abrasive grains The average grain diameter of son can be about 50nm to about 90nm or about 60nm to about 80nm.If polishing particles are averaged Particle diameter is more than 40nm, then is capable of the grinding of grinding object easy to implement, therefore can readily insure that the surface of grinding object The uniformity.In addition, if the average grain diameter of polishing particles is below 150nm, then grinding object can be prevented by transition grinding or Person prevents the surface of grinding object from scratch occurs.Therefore, can in the case where the average grain diameter of polishing particles meets above range The step difference of grinding object is readily removable, while scratch can be prevented.
The content of the polishing particles for example accounts for about 0.1 weight % to about 10 weights relative to ground slurry overall weight Measure %.More specifically, the content of polishing particles can be about 0.1 weight % to about 2 weight %, or about 0.5 weight Measure % to 1.5 weight %.In the case where the content of polishing particles is more than 0.1 weight %, can suitably ensure for grinding The grinding rate of object, and in the case where the content of polishing particles is below 10 weight %, grinding object can be prevented by transition Grind or prevent surface from scratch occurs.
(2) dispersant
In the disclosure, dispersant plays the cohesion between the polishing particles prevented in the ground slurry, and makes its equal The effect disperseed evenly.The dispersant may include the material that the surface potential of the polishing particles can be converted to negative value, For example, selected from by anionic macromolecule, cationic high-molecular, carboxylic acid (hydroxyl acid) and amino acid (amino Acid) one or more of group of composition.
The anionic macromolecule can be selected from by oxalic acid (oxalic acid), citric acid (citric Acid), polysulfonate sour (polysulphonic acid), polyacrylic acid (polyacrylic acid), polymethylacrylic acid One or more of group of (polymethacrylic acid), their copolymer and its salt composition.
The cationic high-molecular can be selected from by polylysine (Polylysine), polyethyleneimine (Polyethyleneimine), the bromo- 5- nitros -1,3- dioxanes of benzethonium chloride (Benzethonium chloride), 5- (Bronidox, preservative), cetrimonium bromide (Cetrimonium bromide), cetrimonium chloride (Cetrimonium Chloride), dimethyldioctadecylammonium ammonium chloride (Dimethyl Dioctadecy Lammonium Chloride), tetramethyl Base ammonium hydroxide (Tetramethy Lammonium Hydroxide), VARISOFT TA100 (Distearyl Dimethyl ammonium chloride), the polymer (Polydimethylamine-co- of dimethylamine and epoxychloropropane Epichlorohydrin), 1,2-dioleoyloxy-3-trimethylammonio propane (1,2-dioleoyl-3-trimethylammonium Propane), one or more of group of polypropylene amine (Poly allyl amine) composition.
The carboxylic acid can be selected from by hydroxybenzoic acid (Hydroxybenzoic acid), ascorbic acid One or more of (Ascorbic acid) and their group of salt composition.
The amino acid can be selected from by pyridine carboxylic acid (Picolinic acid), glutamic acid (glutamic Acid), one in the group of tryptophane (Tryptophane), aminobutyric acid (aminobutyric acid) and their salt composition More than kind.
The dispersant can separately use or combine and use.
In the present embodiment, enable in particular to use anionic macromolecule as the dispersant.The anionic is high Molecule has higher zeta potential, therefore also polishing particles can be made effectively to disperse under low consistency conditions.In anionic height In molecule, such as polyacrylic acid (Polyacrylic acid) or polymethylacrylic acid (Polymethacrylic can be used Acid), and their weight average molecular weight can be 5,000 to 20,000.
The content of the dispersant can for example account for about 0.003 weight % to about relative to ground slurry overall weight 0.06 weight %.More specifically, the content of the dispersant can account for 0.015 weight % to about 0.045 weight %.If point The content of powder is more than 0.003 weight %, then can fully ensure the dispersion stabilization of ground slurry, therefore can prevent Generation precipitation.In addition, if the content of dispersant is below 0.06 weight %, then can prevent because macromolecule dispersing agent occurs Aggegation or ionized concentration increase and there is a phenomenon where dispersion stabilization reduces.
(3) dispersion stabilizer
In the disclosure, dispersion stabilizer is adsorbed in the polishing particles and increases the absolute value of zeta potential, changes so as to play It is apt to the effect of dispersiveness.The dispersion stabilizer may include according to carboxyl and the organic acid with negative electrical charge.It is in addition, described scattered Stabilizer can play pH cushioning effects, so as to suppress the chemical change of the ground slurry, to prevent between polishing particles Aggegation, and it is uniformly dispersed it.
As dispersion stabilizer, such as amino acid can be used, specifically, carboxyl and amino can be used to be incorporated into together The a-amino acid of one carbon atom.As the a-amino acid, carboxyl (- COOH) and amino (- NH can be used2) number phase Neutral amino acid together, the number of carboxyl (- COOH) are more than amino (- NH2) number acidic amino acid, amino (- NH2) Basic amino acid of the number more than the number of carboxyl (- COOH).
For example, the neutral amino acid can be alanine (Alanine), glycine (Glycine), tyrosine (Tyrosine), valine (Valine) etc., the acidic amino acid can be aspartic acid (Aspartic acid), paddy ammonia Sour (Glutamic acid) etc., the basic amino acid can be citric acid (citric acid), lysine (lysine) etc..
The content of the dispersion stabilizer can account for about 0.0004 weight % to about relative to ground slurry overall weight 0.008 weight %.Specifically, the content of the dispersion stabilizer can be 0.002 weight % to 0.006 weight %.If The content of dispersion stabilizer is more than 0.0004 weight %, then pH buffer capacities (buffer capacity) are excellent, and if is divided The content of dispersion stabilizer is below 0.008 weight %, then can readily insure that the dispersion stabilization of ground slurry.
(4) inhibitor is ground
In the disclosure, it can be the non-ionic polymer for all including hydrophobic group and hydrophilic group to grind inhibitor Matter.Hydrophobic group included in grinding inhibitor is grinding the first of covering active layer using the ground slurry according to the disclosure In the process of dielectric film, can easily it be incorporated into the first dielectric film of grinding and the active layer of exposure.Accordingly, included in grinding Hydrophilic group in inhibitor is located at the surface of active layer, and formation has hydrophobic thin protective film on the surface of active layer.This Kind protective film reduces the grinding rate of active layer, therefore in the thickness of active layer and the identical thickness of the first dielectric film, first is exhausted The grinding process of velum still can stop.That is, it is used as by grinding the first dielectric film and the active layer of exposure for the first insulation The grinding stopper film of film and play function.Therefore, in the case of using the ground slurry comprising the grinding inhibitor, can hold Change places and remove the step difference of the first dielectric film.
The non-ionic grinding inhibitor can be selected from by including polysorbate (Polysorbate), octyl group Phenol polyethers (Octoxynol), polyethylene glycol octadecyl ether (Polyethylene glycol octadecyl ether), nonyl Base phenol ethoxylate (Nonylphenol ethoxylate), Emulsifier EL-60 (Polyoxyl castor oil), ring Oxidative ethane (Eethylene oxide), glycerol ethoxylate (Glycerol ethoxylate), Octylphenoxy polyethylene Ethoxy-ethanol (Octylphenoxy poly ethyleneoxy ethanol), nonylphenol polyoxyethylene ether (Polyoxyethylene nonylphenyl ether), Dinonylphenol Polyoxyethylene Ether (Polyoxyethylene Dinonylphenyl ether), Polyethylene Glycol Bisglycidyl Ether (Polyethylene glycol diglycidyl Ether), hydroxyethyl cellulose (Hydroxyethyl cellulose), polyvinylpyrrolidone (Polyvinylpyrrolidone), polyethylene glycol (Polyethylene glycol), polyacrylamide (Polyacrylamide) and polypropylene glycol-PLURONIC F-127 (Poly (propylene glycol)-block-poly(ethylene glycol)-block-poly(propylene glycol),PEP block Copolymer) one or more of group of composition.
The content of non-ionic grinding inhibitor can account for about 0.0002 weight relative to the weight of ground slurry entirety Measure % to about 0.004 weight %.More specifically, the content of non-ionic grinding inhibitor can be about 0.001 weight Measure % to about 0.003 weight %.In the case where the content of grinding inhibitor meets above range, if in the first dielectric film Grinding process in exposure include the active layer of polysilicon, then the exposure can be as the grinding process of the first dielectric film of stopping Grind stopper film and play function, accordingly, the surface evenness of the first dielectric film after performing grinding process can be improved.
(5) other
The ground slurry has appropriate pH value according to grinding object.For example, in the present embodiment, the slurry The pH value of material can be about 4 to 8, can be about 6 to 7 specifically.Meet above range in the pH of the ground slurry In the case of, it can be ensured that according to the stability of the ground slurry in this contents, and it can uniformly and rapidly grind work For the first dielectric film described later of grinding object.
The ground slurry is in order to appropriate pH value, can also include pH adjusting agent.PH adjusting agent for example can be In the group being made of nitric acid (Nitric acid), acetic acid (Acetic acid) and phosphoric acid (Phosphoric acid) More than one.
The ground slurry of the disclosure except polishing particles, dispersant, dispersion stabilizer and it is non-ionic grinding inhibitor with It can include remaining solvent outside.
The content of the solvent can be except the polishing particles, the dispersant, the stabilizer and the grinding suppression Remaining content beyond the content of preparation.
In addition, as above-mentioned solvent, such as deionized water (deionized water) can be used.
It can be used according to the ground slurry of an embodiment for active layer of the covering comprising polysilicon and there is step difference The first dielectric film planarization process in.Hereby it is possible to the surface evenness of the first dielectric film is easily improved, therefore can The threshold voltage distribution for the grid being formed on the first dielectric film is reduced, as a result can improve the characteristic of transistor display panel.
In addition, the grinding inhibitor for all having hydrophobic group and hydrophilic group is included according to the ground slurry of an embodiment, Therefore in the planarization process of dielectric film in the case of exposure active layer, hydrophobicity protective film is formed on the surface of active layer. Hereby it is possible to reduce the grinding rate for active layer, though as a result without extra operation, can also stop being directed to covered with The grinding process of the dielectric film of active layer.
Hereinafter, the disclosure is specifically observed by embodiment.
Embodiment 1
The average grain diameter for mixing 1 weight % is the wet type cerium oxide powder of 70nm, the conduct dispersant of 0.03 weight % Polymethylacrylic acid, that is, Darvan C-N (Vanderbilt mineral), the lemon as dispersion stabilizer of 0.004 weight % Polypropylene glycol-PLURONIC F-127 as non-ionic grinding inhibitor of acid, 0.001 weight % (Poly(propylene glycol)-block-poly(ethylene glycol)-block-poly(propylene Glycol), PEP block copolymers) and and remaining deionized water, and nitric acid is added, so that it is 6.5 to grind to have manufactured pH value Defibrination material.
Embodiment 2
Except using polypropylene glycol-polyethylene glycol the third two of 0.002 weight % as non-ionic grinding inhibitor Beyond alcohol block copolymer this point, ground slurry has been manufactured in the same manner as in Example 1.
Embodiment 3
Except using polypropylene glycol-polyethylene glycol the third two of 0.004 weight % as non-ionic grinding inhibitor Beyond alcohol block copolymer this point, ground slurry has been manufactured in the same manner as in Example 1.
Embodiment 4
Except using the polyvinylpyrrolidone of 0.002 weight % as non-ionic grinding inhibitor Beyond (Polyvinylpyrrolidone, PVP) this point, ground slurry has been manufactured in the same manner as in Example 1.
Embodiment 5
Except using the hydroxyethyl cellulose of 0.002 weight % as non-ionic grinding inhibitor Beyond (Hydroxyethyl cellulose, HEC) this point, ground slurry has been manufactured in the same manner as in Example 1.
Embodiment 6
Except using the polyethylene glycol (Polyethylene of 0.002 weight % as non-ionic grinding inhibitor Glycol, PEO) beyond this point, ground slurry has been manufactured in the same manner as in Example 1.
Embodiment 7
Except using 1 weight % average grain diameter be 80nm wet type cerium oxide powder and 0.002 weight % it is non-from Beyond subtype grinding inhibitor this point, ground slurry has been manufactured in the same manner as in Example 1.
Comparative example 1
In addition to not comprising non-ionic grinding inhibitor this point, manufacture ground in the same manner as in Example 1 Defibrination material.
Comparative example 2
Except using polypropylene glycol-polyethylene glycol third of 0.0001 weight % as non-ionic grinding inhibitor Beyond diol block copolymer this point, ground slurry has been manufactured in the same manner as in Example 1.
Comparative example 3
Except using polypropylene glycol-polyethylene glycol the third two of 0.006 weight % as non-ionic grinding inhibitor Beyond alcohol block copolymer this point, ground slurry has been manufactured in the same manner as in Example 1.
Reference example 1
Except using 1 weight % average grain diameter be 20nm wet type cerium oxide powder this point in addition to, with implementation The identical method of example 1 has manufactured ground slurry.
Reference example 2
Except using 1 weight % average grain diameter be 30nm wet type cerium oxide powder this point in addition to, with implementation The identical method of example 1 has manufactured ground slurry.
Experimental example 1-measurement grinding rate
Measured using the ground slurry manufactured according to embodiment 1 to 6 and comparative example 1 to 3 for silicon oxide film With the grinding rate of polysilicon film.The result is shown in such as table 1 below.In addition, in fig. 9 it is shown that containing based on grinding inhibitor The grinding rate measurement result of amount, and figure 10 illustrates the grinding rate measurement result of the species based on grinding inhibitor.
[table 1]
If with reference to Fig. 1, Fig. 9 and Figure 10 it has been confirmed that comprising grinding inhibitor according to embodiment 1 to embodiment 6 Ground slurry compared to not comprising grinding inhibitor according to comparative example 1 or with few content include grinding inhibitor according to than It is similar for the grinding rate of silicon oxide film for ground slurry compared with example 2, but it is very low for the grinding rate of polysilicon film. In addition, for the ground slurry according to comparative example 3 comprising excessive grinding inhibitor, it can confirm that it is directed to polysilicon The grinding rate of film is relatively low, and can also be reduced for the grinding rate of silicon oxide film.
Therefore, in the process of grinding silicon oxide film, if using the ground slurry according to comparative example 1 and 2, even if containing The active layer exposure of polysilicon, grinding process will not stop.In addition, in the situation using the ground slurry according to comparative example 3 Under, since the time of grinding process is elongated, so productivity can reduce, therefore be not suitable for being used in the manufacture of transistor display panel In process.
Conversely, for the situation for the ground slurry according to embodiment 1 to 6 that grinding inhibitor is included with appropriate content For, it can confirm that if the active layer comprising polysilicon is exposed, can be significantly decreased for the grinding rate of active layer, from And the grinding process of the dielectric film comprising silica may stop.Further, since it is also excellent for the grinding rate of silicon oxide film, So it is able to confirm that the productivity of transistor display panel is also excellent.
The evaluation of experimental example 2- abrasive characteristics
In glass substrate (size：730 × 920) thickness is formed on and is the amorphous silicon film of 47.5nm, and is swashed by quasi-molecule Photo-annealing (Excimer laser annealing) and form polysilicon film.Afterwards, in the glass substrate and polysilicon film On form thickness be 50nm silicon oxide film.
Utilize the ground slurry and mill (POLI-300, G＆ manufactured according to embodiment 2 and 7 and reference example 1 and 2 P), the surface of the silicon oxide film is ground with the rotary speed of 80/80RPM (head/plate).Measure amount of grinding, grinding Rate and step difference remove the time and are shown in following tables 2, and the amount of grinding based on milling time is included in Figure 11 to figure In 14.In table 2 and Figure 11 into Figure 14, the surface for the silicon oxide film that will be formed on glass substrate is known as Part I, and will The surface for the silicon oxide film for being overlapped in polysilicon film and arranging is known as Part II.In addition, step difference, which removes the time, represents grinding Silicon oxide film and the time for making polysilicon film and silicon oxide film that there is identical thickness to be consumed.
[table 2]
If with reference to Fig. 2 and Figure 11 to Figure 14, the ground slurry according to embodiment 2 and the manufacture of embodiment 7 can confirm that For the ground slurry manufactured according to reference example 1 and 2, the grinding rate of the grinding rate of Part II with respect to Part I Ratio it is significantly high.
As noted previously, as the grinding rate of Part II is 5 with respect to the ratio of the grinding rate of Part I:More than 1, that is, compare It is higher, therefore can be significantly reduced and remove the time that step difference is consumed.Furthermore, it is possible to know, for according to the embodiment For the situation of ground slurry, grinding efficiency is also excellent, and grinding process can carry out in the way of with uniform face.Cause This, in the case where the manufacturing process of transistor display panel will be applied to according to the ground slurry of the disclosure, it is possible to increase gone Except the face of step difference the uniformity while shorten milling time, therefore productivity can be significantly increased.
According to embodiment, due to improving surface evenness in the step difference of the dielectric film by removing covering active layer Dielectric film on form grid, therefore be capable of providing the manufacture method with high-resolution transistor display panel.
In addition, the grinding of the step difference for the dielectric film that can be readily removable covering active layer can be provided according to embodiment Slurry.
As described above, by the embodiment and attached drawing of restriction, the present invention is described, but the invention is not restricted to This, the present invention belonging to technical field in have basic knowledge people can with the present invention technological thought and be recorded in right Various amendment and deformation are realized in the equivalent scope of scope in claim.

Claims (19)

1. a kind of manufacture method of transistor display panel, including the steps：
Semiconductor layer is formed on substrate；
The semiconductor layer is patterned and forms active layer；
Form the first dielectric film for covering the substrate and the active layer；
Grind first dielectric film and exposure described in have edge layer；
Formed and cover first dielectric film and second dielectric film for having edge layer,
Grind first dielectric film and exposure described in there is the step of edge layer to include using ground slurry execution, the ground slurry Polishing particles, dispersant, dispersion stabilizer, non-ionic grinding inhibitor and pH adjusting agent.
2. the manufacture method of transistor display panel as claimed in claim 1, wherein,
The step of forming first dielectric film performs as follows：
First dielectric film is set to include the Part II for the Part I and covering active layer for covering the substrate.
3. the manufacture method of transistor display panel as claimed in claim 2, wherein,
The step of grinding first dielectric film and exposing the active layer performs as follows：
It is 1 to make the ratio between the grinding rate of the Part I and the grinding rate of the Part II:Less than 5.
4. the manufacture method of transistor display panel as claimed in claim 1, wherein,
The step of grinding first dielectric film and exposing the active layer performs as follows：
Make first dielectric film and the active layer that there is identical thickness.
5. the manufacture method of transistor display panel as claimed in claim 1, wherein,
The active layer and second dielectric film directly contact.
6. a kind of ground slurry, the manufacture for the transistor display panel being used in described in any one in claim 1 to 5 Method, including：
Polishing particles；
Dispersant, including at least one of anionic macromolecule, cationic high-molecular, carboxylic acid and amino acid；
Dispersion stabilizer, including the organic acid with carboxyl；
Non-ionic grinding inhibitor；And
PH adjusting agent.
7. ground slurry as claimed in claim 6, wherein,
The polishing particles are selected from by wet type ceria, dry type ceria, silica, aluminium oxide, zirconium oxide and two One or more of group of titanium oxide composition.
8. ground slurry as claimed in claim 6, wherein,
The crystal structure of the polishing particles is polyhedral structure or round edge shape cubic structure.
9. ground slurry as claimed in claim 6, wherein,
The average grain diameter of the polishing particles is 40nm to 150nm.
10. ground slurry as claimed in claim 6, wherein,
The content of the polishing particles accounts for 0.1 weight % to 10 weight % relative to ground slurry overall weight.
11. ground slurry as claimed in claim 6, wherein,
The anionic macromolecule selected from by oxalic acid, citric acid, polysulfonate acid, polyacrylic acid, polymethylacrylic acid, they One or more of group of copolymer and its salt composition.
12. ground slurry as claimed in claim 6, wherein,
The content of the dispersant accounts for 0.003 weight % to 0.06 weight % relative to ground slurry overall weight.
13. ground slurry as claimed in claim 6, wherein,
The dispersion stabilizer be in the group being made of neutral amino acid, acidic amino acid and basic amino acid it is a kind of with On,
The neutral amino acid includes at least one of alanine, glycine, tyrosine and valine,
The acidic amino acid includes at least one of aspartic acid and glutamic acid,
The basic amino acid includes at least one of citric acid and lysine.
14. ground slurry as claimed in claim 6, wherein,
The content of the dispersion stabilizer accounts for 0.0004 weight % to 0.008 weight % relative to ground slurry overall weight.
15. ground slurry as claimed in claim 6, wherein,
It is described it is non-ionic grinding inhibitor be selected from by including polysorbate, octyl phenol polyethers, polyethylene glycol octadecyl ether, Nonyl phenol ethoxylate, Emulsifier EL-60, ethylene oxide, glycerol ethoxylate, Octylphenoxy polyethyleneoxy Ethanol, nonylphenol polyoxyethylene ether, Dinonylphenol Polyoxyethylene Ether, Polyethylene Glycol Bisglycidyl Ether, hydroxyethyl cellulose, poly- second One or more of group of alkene pyrrolidone, polyacrylamide and polyethylene glycol propane diols-polyethyleneglycol block copolymer.
16. ground slurry as claimed in claim 6, wherein,
The content of the non-ionic grinding inhibitor accounts for 0.0002 weight % to 0.004 weight relative to ground slurry overall weight Measure %.
17. ground slurry as claimed in claim 6, wherein,
The pH adjusting agent is selected from one or more of group being made of nitric acid, acetic acid and phosphoric acid.
18. ground slurry as claimed in claim 6, wherein,
The pH value of the ground slurry is 4 to 8.
19. ground slurry as claimed in claim 6, wherein,
The ground slurry grinds dielectric film, and the dielectric film covering includes the active layer of polysilicon.
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