CN107993972A - A kind of flexible electronic functional material and preparation method thereof - Google Patents
A kind of flexible electronic functional material and preparation method thereof Download PDFInfo
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- CN107993972A CN107993972A CN201711118044.4A CN201711118044A CN107993972A CN 107993972 A CN107993972 A CN 107993972A CN 201711118044 A CN201711118044 A CN 201711118044A CN 107993972 A CN107993972 A CN 107993972A
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- 239000000463 material Substances 0.000 title claims abstract description 54
- 238000002360 preparation method Methods 0.000 title claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 238000000034 method Methods 0.000 claims abstract description 26
- 238000005260 corrosion Methods 0.000 claims abstract description 16
- 230000007797 corrosion Effects 0.000 claims abstract description 15
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000010703 silicon Substances 0.000 claims abstract description 9
- 239000002253 acid Substances 0.000 claims abstract description 5
- 239000004698 Polyethylene Substances 0.000 claims description 29
- 229910003481 amorphous carbon Inorganic materials 0.000 claims description 13
- 229920000573 polyethylene Polymers 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052681 coesite Inorganic materials 0.000 claims description 10
- 229910052906 cristobalite Inorganic materials 0.000 claims description 10
- 239000000377 silicon dioxide Substances 0.000 claims description 10
- 229910052682 stishovite Inorganic materials 0.000 claims description 10
- 229910052905 tridymite Inorganic materials 0.000 claims description 10
- 229910052737 gold Inorganic materials 0.000 claims description 9
- -1 polyethylene Polymers 0.000 claims description 7
- 230000003647 oxidation Effects 0.000 claims description 6
- 238000007254 oxidation reaction Methods 0.000 claims description 6
- 239000013049 sediment Substances 0.000 claims description 5
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 2
- 239000002390 adhesive tape Substances 0.000 claims description 2
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 230000007812 deficiency Effects 0.000 abstract description 2
- 239000008204 material by function Substances 0.000 abstract description 2
- 239000002994 raw material Substances 0.000 abstract description 2
- 239000010410 layer Substances 0.000 abstract 5
- 239000002346 layers by function Substances 0.000 abstract 1
- 238000004064 recycling Methods 0.000 abstract 1
- 239000010931 gold Substances 0.000 description 16
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 238000006701 autoxidation reaction Methods 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 239000012776 electronic material Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical class [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 230000002929 anti-fatigue Effects 0.000 description 1
- 238000013473 artificial intelligence Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Laminated Bodies (AREA)
Abstract
The invention discloses a kind of flexible electronic functional material and preparation method thereof.Using silicon chip as substrate, it is sacrifice layer to grow oxide layer on substrate；Using method chemically or physically, functional film materials are grown on sacrifice layer；Flexible substrate is pasted on functional film surface, then a kind of flexible electronic functional material after sacrifice layer corrosion, will be obtained using acid corrosion method used.The present invention can not realize under the high temperature conditions for existing flexible electronic functional material preparation process, and some functional materials cannot be prepared into the deficiency of flexible device, using first preparing sacrifice layer, and required functional layer is grown under the harsh conditions such as high temperature, the method for recycling corrosion to peel off, obtains a kind of existing good flexible nature, and can possess the flexible electronics of required function, it is cheap with the prices of raw materials, the characteristics of preparation process is simple and environmentally-friendly.
Description
Technical field
The present invention relates to a kind of flexible electronics and preparation method thereof, more particularly to a kind of peeled off using chemical attack to make
The method of standby flexible electronic functional material, belongs to flexible material technical field.
Background technology
With the development of science and technology artificial intelligence plays an increasingly important role in human lives, and flexibility function
Application of the material particularly flexible electronics in the field has huge potentiality, has caused global extensive concern.It is soft
The performance such as flexible special and portable possessed by property electronic material so that it has in fields such as information, the energy, medical treatment, national defence
Wide application prospect, such as prepares electronic skin, emulated robot, flexible electronic displays, solar panel, wearable device
Deng.At present, flexibility function material can be summarized as two classes：One kind is flexible composite, i.e. the inherently flexible material of functional material
Material, this kind of material preparation process is simple, and antifatigue degree is strong, but shortcoming is also evident from, and conductive characteristic is poor, and function is single；It is another
Class is then to have functional diversities by the material relied on, function film coats, this kind of material of flexible substrates, can be prepared into conduction
The features such as electronic device of good performance, therefore, this kind of materials application, are the most extensive.
However, since flexible substrate material generally cannot all bear the exacting terms such as high temperature, some needs are result in
Hot conditions growth, the material with characteristics such as good photoelectromagnetics cannot be able to apply in flexible device field.Existing flexibility
Device is usually the method with chemistry directly in flexible substrate（Such as polyethylene：PE）Upper synthesis, the flexible material function ratio of preparation
More single, electric conductivity is poor, limits the development of flexible electronic device to a certain extent, therefore it provides it is prepared by a kind of method,
The existing good flexible nature of material made, and can possess required function, there is highly important urgent and necessity.
The content of the invention
The present invention prepares the deficiency limited be subject to hot conditions, and some function materials for existing flexible electronics
The problem of material can not be prepared into flexible device, there is provided a kind of existing good flexible nature, and can possess the flexibility of required function
Electronic functional material and preparation method thereof.
Realize that the technical solution of the object of the invention is to provide a kind of preparation method of flexible electronic functional material, using silicon chip as
Substrate, it is sacrifice layer to grow oxide layer on substrate；Using method chemically or physically, it is thin that feature is grown on sacrifice layer
Film；Flexible substrate is pasted on functional film surface, then a kind of flexibility after sacrifice layer corrosion, will be obtained using acid corrosion method used
Electronic material.
In technical solution of the present invention, the material of the flexible substrate is one kind in polyethylene or adhesive tape.Described is sacrificial
Domestic animal layer is SiO2Or one kind in MgO.The material of the functional film is one kind in amorphous carbon a-C, Au or Pt.
Realizing an optimization method of technical solution of the present invention is：Oxide layer SiO is grown naturally on silicon substrate surface2For
Sacrifice layer, using magnetron sputtering or pulse laser sediment method, oxidation layer surface is grown on by amorphous carbon a-C functional films；
Using polythene PE film as flexible substrate, polyethylene film is heated to 190~210 DEG C, is pasted on amorphous carbon a-C functional film tables
Face, obtains Si/SiO2The sample of/a-C/PE structures；Sample is placed in the hydrogen fluoride solution that mass concentration is 5%, corrosion treatment
2~5 minutes, obtain a kind of a-C/PE flexible electronics functional material.
Realizing another optimization method of technical solution of the present invention is：On silicon substrate surface, growth oxide layer MgO is sacrificial
Domestic animal layer, using magnetron sputtering or pulse laser sediment method, in oxidation layer surface growth Au functional films；With polythene PE film
For flexible substrate, polyethylene film is heated to 190~210 DEG C, Au functional films surface is pasted on, obtains Si/MgO/Au/PE
The sample of structure；Sample is placed in the acetum that mass concentration is 36%, corrosion treatment 120~150 minutes, obtains one kind
Au/PE flexible electronic functional materials.
Technical solution of the present invention further includes a kind of flexible electronic functional material that the method for being prepared as described above obtains.
Compared with prior art, the beneficial effects of the invention are as follows：
1. technical solution provided by the invention can first grow required functional film under the harsh conditions such as high temperature, recycle
Corrosion stripping method prepares flexible material, overcomes that general flexible material is high-temperature denatured cannot be directly as substrate the defects of, has
Application prospect.
2. the present invention has very strong fatigue resistance and bend resistance characteristic using thermoplastic resin as flexible substrate,
Available for the device for preparing intensive work；Meanwhile also there is stable chemical property, the corrosion of most of soda acids is resistant to, electricity
Good insulation preformance, has excellent resistance to environmental aging performance and flexible nature, can should be in wearable device.
3. the prices of raw materials according to the present invention are cheap, preparation process is simple.Especially with SiO2For sacrifice layer, due to
By the SiO of HF solution corrosions2Layer only has several nano thickness, and therefore, the silicon chip after corrosion is peeled off can again be oxidized repetition
Utilize, there is economic, environmental protection.And using MgO as sacrifice layer, then weak acid can be selected in corrosive liquid, and it is poor to be used to prepare acid resistance
Material.
Brief description of the drawings
Fig. 1 is the embodiment of the present invention 1 with SiO2The process flow diagram of flexible electronic functional material is prepared for sacrifice layer；
Fig. 2 is that bending state is presented under finger compressing by the flexible amorphous carbon sample that 1 preparation method of the embodiment of the present invention obtains
Displaying figure；
Fig. 3 is the scanning electron microscope diagram for the flexible amorphous carbon sample that the embodiment of the present invention 1 provides；
Fig. 4 is the embodiment of the present invention 2 with SiO2The flexible unitary gold sample drawing prepared for sacrifice layer；
Fig. 5 is the embodiment of the present invention 2 with SiO2The X ray diffracting spectrum of the flexible unitary gold sample prepared for sacrifice layer.
Embodiment
Technical solution of the present invention is further elaborated with reference to the accompanying drawings and examples.
Embodiment 1：
Referring to attached drawing 1, it is a kind of preparation process flow diagram of flexible electronic functional material provided in this embodiment；Fig. 1
Shown in middle step S1, SiO is obtained through autoxidation on si substrates2Oxide layer, magnetic control is used under conditions of being 500 DEG C in temperature
Sputtering method, is prepared the Si/SiO shown in step S22/ function film structure sample；In the present embodiment, function film is
Amorphous carbon (a-C) film, that is, be prepared a kind of Si/SiO2/ a-C structure samples；PE is heated to 190 DEG C, is pasted in S2 samples
The a-C one sides of product, obtain the flexible electronics Si/SiO shown in step S32The sample of/a-C/PE structures；Step S3 is obtained
Sample be soaked in mass concentration be 5% HF solution in, treat SiO2After being corroded by HF, as shown in step s 4 semi-detached is obtained
Sample；Sample is separated with external force again, Si and a-C/PE samples are respectively obtained after separation as shown in step s 5；In step S6, Si
Piece passes through autoxidation or oxidation processes, obtains the substrate shown in step S1, can be recycled.
Referring to Fig. 2, the displaying of bending state is presented under finger compressing for flexible amorphous carbon sample manufactured in the present embodiment
Figure；Preparation method provided in this embodiment, amorphous carbon (a-C) film can be shifted intactly, obtain big face from silicon chip
Long-pending flexibility function material.
It is the sectional view of flexible amorphous carbon sample manufactured in the present embodiment under a scanning electron microscope, by scheming referring to Fig. 3
3 can see, and the thickness of amorphous carbon (a-C) film is 50nm, since film has been transferred on flexible substrate PE, after film bends
Generate fold；At the same time it can further be seen that passing through 190 DEG C of heating due to PE generates bubble, film is also due to the softness of PE
There is the fluctuating of height in property.
Embodiment 2：
The present embodiment is using MgO as sacrifice layer, and preparation process is as shown in Figure 1.
Specific method and process conditions are as follows：On si substrates MgO film, then profit are prepared using pulse laser sediment method
Gold is prepared with magnetically controlled sputter method（Au）Film, obtains the sample of Si/MgO/Au structures；The PE pastes for heating 190 DEG C are existed
The Au one sides of Si/MgO/Au samples, obtain Si/SiO2The sample of/Au/PE structures；It is 37% that sample is soaked in mass concentration
When processing 2 is small in acetum, then sample is separated with external force, obtain separated Si and Au/PE flexibility functions material sample.
Referring to attached Figure 4 and 5, they are respectively the photo and X ray diffracting spectrum of Au/PE samples provided in this embodiment；
Fig. 5 shows nearby very strong diffraction maximum occur at 38.2 ° and 81.7 °, represent gold respectively（111）Face and（222）Face
Peak, shows the good crystallinity of Gold Samples, and the golden functional material of flexibility of monocrystalline has been prepared.
The method provided by the invention for preparing flexible material, in particular by corrosion stripping means, overcomes electric function
Material is limited in preparation process by depositing temperature condition, and the electronic functional material that can make to need to grow under hot conditions also can
Applied on flexible material, so as to impart the more functions of flexible material, application field is more extensive.Meanwhile the present invention carries
The preparation method of confession also has the features such as simple process and low cost is honest and clean, environmentally protective.
Claims (7)
- A kind of 1. preparation method of flexible electronic functional material, it is characterised in that：Using silicon chip as substrate, growth oxidation on substrate Layer is sacrifice layer；Using method chemically or physically, functional film is grown on sacrifice layer；Flexible substrate is pasted on function Property film surface, then a kind of flexible electronic functional material after sacrifice layer corrosion, will be obtained using acid corrosion method used.
- A kind of 2. preparation method of flexible electronic functional material according to claim 1, it is characterised in that：The flexibility The material of substrate is one kind in polyethylene or adhesive tape.
- A kind of 3. preparation method of flexible electronic functional material according to claim 1, it is characterised in that：The sacrifice Layer is SiO2Or one kind in MgO.
- A kind of 4. preparation method of flexible electronic functional material according to claim 1, it is characterised in that：The function Property film material be amorphous carbon a-C, Au or Pt in one kind.
- A kind of 5. preparation method of flexible electronic functional material according to claim 1, it is characterised in that：In silicon substrate Surface grows oxide layer SiO naturally2For sacrifice layer, using magnetron sputtering or pulse laser sediment method, by amorphous carbon a-C functions Property film is grown on oxidation layer surface；Using polythene PE film as flexible substrate, polyethylene film is heated to 190~210 DEG C, is pasted In amorphous carbon a-C functional films surface, Si/SiO is obtained2The sample of/a-C/PE structures；Sample is placed in mass concentration as 5% Hydrogen fluoride solution in, corrosion treatment 2~5 minutes, obtains a kind of a-C/PE flexible electronics functional material.
- A kind of 6. preparation method of flexible electronic functional material according to claim 1, it is characterised in that：In silicon substrate Surface growth oxide layer MgO is sacrifice layer, using magnetron sputtering or pulse laser sediment method, in oxidation layer surface growth Au work( Can property film；Using polythene PE film as flexible substrate, polyethylene film is heated to 190~210 DEG C, is pasted on Au functional films Surface, obtains the sample of Si/MgO/Au/PE structures；Sample is placed in the acetum that mass concentration is 36%, corrosion treatment 120~150 minutes, obtain a kind of Au/PE flexible electronics functional material.
- A kind of 7. flexible electronic functional material obtained by claim 1 preparation method.
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Cited By (3)
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| CN109192670A (en) * | 2018-08-17 | 2019-01-11 | 中国科学院上海微系统与信息技术研究所 | Flexible semiconductor laminated film and preparation method thereof |
| WO2020238948A1 (en) * | 2019-05-29 | 2020-12-03 | 京东方科技集团股份有限公司 | Preparation method for microelectrode film |
| CN114014253A (en) * | 2021-11-03 | 2022-02-08 | 哈尔滨工业大学 | Tubular monocrystal perovskite oxide film with controllable diameter and preparation method thereof |
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Application publication date: 20180504 |