CN102988120B - A kind of artificial skin based on nano-graphene tunneling effect and preparation method thereof - Google Patents
A kind of artificial skin based on nano-graphene tunneling effect and preparation method thereof Download PDFInfo
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- CN102988120B CN102988120B CN201210574577.4A CN201210574577A CN102988120B CN 102988120 B CN102988120 B CN 102988120B CN 201210574577 A CN201210574577 A CN 201210574577A CN 102988120 B CN102988120 B CN 102988120B
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Abstract
The invention discloses a kind of artificial skin based on nano-graphene tunneling effect and preparation method thereof, artificial skin based on nano-graphene tunneling effect comprises: flexible substrate, graphene layer, metal electrode, and wherein metal electrode and Graphene composition can the device of perception stress be positioned on flexible substrate.Artificial skin of the present invention has the good characteristic of Graphene, has the features such as monoatomic layer thickness, ductility is good, crushing resistance is strong, electrical properties is superior.
Description
Technical field
The invention belongs to nanosecond science and technology field, particularly relate to a kind of artificial skin based on nano-graphene tunneling effect and preparation method thereof.
Background technology
In everyone organoid, skin is usually ignored by us and is carelessly treated, but; skin is very reliable; it is our organ and " patron saint " of tissue, helps us to avoid injury, under guaranteeing that we are in suitable temperature and environment by transmitting various sensation.
Recent years, artifucial limb is more and more perfect, even if but the most delicate impression that also do not have human body skin to have of best artifucial limb, that is, artifucial limb does not touch others or touched by others' warmth brought to be felt.But new electronic skin is come out of the stove towards producing and is gathered around tactile artifucial limb and stepped major step near.The people such as Philips's rice rattan Dorr Fu Er of Germany is made by integrated infrared sensor and temperature sensor can the circuit board of simulating human skin light touch.The history Tiffany at univ cambridge uk's nano science center draws storehouse to produce the circuit that can nondestructively stretch and be out of shape on a transparent elastic silica gel in addition.This elastomeric material can wrap up extremity, finger, is expected to be applied to skin transplantation and even skin is used as the fields such as touch screen interface.But manufacture " artificial skin " need it to have can to stretch, have sense of touch, can the character such as sensing, this just calls a kind of appearance of new material.
Graphene is by sp
2the hexagonal primitive unit cell monoatomic layer crystal that the carbon atom of hydridization forms, it is the first two-dimensional material truly that the mankind find, its thickness only has dust to arrive nanometer scale, and its size is generally in micron dimension, aspect ratio is very big, the twice of carbon pipe, because of but one has the nano material of " macro-size ".Due to the effect of the Van der Waals between Graphene and substrate surface, macroscopically show as a two dimensional surface.Therefore the application for Graphene there has been all more options, comprises and cutting out as graphene nano band, or two dimensional surface electronic device.
Graphene is the thinnest the firmest known and ductility best material, and its Young's modulus can more than 1TPa, and Graphene has very high electricity quality, and at room temperature its carrier mobility is up to 200,000cm
2v
-1s
-1, ballistic transport length can reach sub-micrometer scale, and these characteristics all imply that its wide application prospect in nano-sensor.
There are some to utilize Graphene to prepare the report of single strain gauge method in prior art, mainly comprised: one, will peel off Graphene and suspend and substrate, the mechanical strength utilizing it good has made reusable strain gauge.Two, utilize chemical vapour deposition (CVD) (CVD) method to prepare large-area graphene film, when applying larger stress, its electrical resistance strains regular change.Three, for graphene composite material, different with tensile stress according to applying compressive stress, composite overlap-add region area increases or reduces and causes the respective change of resistance.
Summary of the invention
The object of the present invention is to provide a kind of artificial skin based on nano-graphene tunneling effect, this artificial skin is highly sensitive, is affected by the external environment less, good stability, repeatable high.
A kind of artificial skin based on nano-graphene tunneling effect provided by the invention comprises:
Flexible substrate, graphene layer, metal electrode, wherein metal electrode and Graphene composition can the device of perception stress be positioned on flexible substrate.
The manufacture method of a kind of artificial skin based on nano-graphene tunneling effect of the present invention comprises the steps:
1) in silicon oxide substrate, nano-graphene is prepared;
2) be coated with polymethyl methacrylate (PMMA) on nano-graphene surface and dry on hot plate;
3) have the silicon oxide substrate of Graphene to be placed in hydrofluoric acid solution on the surface being coated with PMMA to soak, pick up when it floats on liquid level naturally, in deionized water its surface folding is paved and rinse rear air gun well and blow away surface moisture, be placed in baking on hot plate and ensure that between thin film and flexible substrate, moisture is removed completely;
4) flexible substrate of graphene film is had on surface to be placed in the PMMA that acetone removes its surface;
5) at graphenic surface plated metal as electrode;
6) sample carrying out electrode is carried out secondary graph exposure, by reactive ion etching, unnecessary Graphene is removed after development, with acetone, unnecessary glue is removed afterwards.
Advantage of the present invention:
1) artificial skin utilizing method of the present invention to prepare has the good characteristic of Graphene, has the features such as monoatomic layer thickness, ductility is good, crushing resistance is strong, electrical properties is superior;
2) device of method processing of the present invention has superior device performance.The resistance-variableization several times when depression depths is 0.1mm, tunnelling distance and tunneling barrier are only depended in the sensitivity due to device, are its intrinsic attributes, are affected by the external environment less, good stability, repeatable high;
3) its response time of artificial skin of obtaining of method of the present invention and relaxation time depend on the response of substrate, therefore can accomplish the extraneous touching information of Real-time Obtaining for the substrate that response time is short;
4) method of the present invention and existing semiconducter process are compatible, and the artificial skin based on nano-graphene tunneling effect meets the demand of large-scale integrated, can be mass.
5) the artificial skin fabrication cycle based on nano-graphene is short, and the material price of use is cheap, greatly reduces energy consumption and the cost of manufacturing process.
These features make this artificial skin based on nano-graphene tunneling effect newly have good application potential and using value widely above.
Accompanying drawing explanation
Fig. 1 is the implementation step schematic diagram of preparation method of the present invention;
Fig. 2 is the increase of the nano-graphene artificial skin individual devices electrical resistance depression depths when there being contact using the present invention to obtain and increases.A () figure is when different depression depths, the current/voltage characteristic curve chart of device; B () figure is the variation diagram that the device resistance obtained by figure (a) increases with depression depths.
Resistance variations figure when Fig. 3 is Graphene artificial skin 3 × 4 array device application point contact (a) and linear contact lay (b) that use the present invention to obtain.
Detailed description of the invention
Artificial skin of the present invention based on Graphene be the thinnest the firmest known and ductility best material, can stretch, the feature such as electrical properties is good, utilizing the tunneling effect between nano-graphene island to obtain having high sensitivity can the integrated strain gauge of multi-point touch.Graphene film is made up of to the Graphene island that hundreds of nanometer is different between a few nanometer yardstick.The Graphene grown is transferred on transparent flexible substrate (dimethyl siloxane PDMS/ poly terephthalic acid PET), utilize traditional micro Process means to make integrated small scale nano-graphene sensor.Due to tunneling effect, resistance has indicial response to tunnelling distance, corresponding to when applying different stress, and the resistance obtained has significant regular change.
Further illustrate below by specific embodiment.
The nano-graphene artificial skin that chemical vapour deposition (CVD) (PECVD) method utilizing plasma to strengthen obtains and characteristic test.
1, by PECVD method, Graphene is deposited directly to silicon oxide liner basal surface, concrete growth conditions is: temperature 525 ° of C, methane gas flow 30SCCM, pressure 0.2Torr, plasma power 100W, growth time 2.5 hours.
2, the oxidized silicon chip of growing graphene surface is coated with the 950PMMA of 5%, the speed of being coated with is 3000r/min 1min altogether, and 180 ° of C hot plates toast 3min.
3, the hydrofluoric acid solution that the surface being coated with PMMA has the silicon oxide substrate of Graphene to be placed in 10% is soaked several hours, pick up with PDMS/PET when it floats on liquid level naturally, in deionized water its surface folding is paved and rinse rear air gun well and blow away surface moisture, be placed on 110 ° of C hot plates and toast half an hour, ensure moisture removal between thin film and flexible substrate.
The surface of 4, having shifted have the flexible substrate of graphene film to be placed in PMMA that acetone removes its surface.
5, on sample, be coated with one deck S1813 glue, speed is 4500 revs/min, 115 ° of C hot plates toast 1 minute, ultraviolet photolithographic technology is utilized to expose the electrode structure designed, electron beam evaporation system is utilized to steam Ti/Au ~ 2nm/30nm after development, then remove with acetone and remove unnecessary S1813 glue (lift-off), obtain electrode.
6, carry out the exposure of quadratic diagram shape after the sample carrying out electrode being coated with S1813 glue, by reactive ion etching, unnecessary Graphene is removed after development, with acetone, unnecessary glue is removed afterwards, so just obtain complete device.
7, completed device is connected with external measurement devices, can produce deformation and then cause the change of resistance when device is contacted by object.We measure change in electrical properties when individual devices and multiple integrated device increase with depression depths respectively.
As shown in Figure 1, the artificial skin prepared comprises flexible substrate and is positioned at the stress sensing device be made up of Graphene and metal electrode on flexible substrate the artificial skin structure that the present invention prepares.
Fig. 2 is the increase of the nano-graphene artificial skin individual devices electrical resistance depression depths when there being contact using the present invention to obtain and increases.A () figure is when different depression depths, the current/voltage characteristic curve chart of device; B () figure is the variation diagram that the device resistance obtained by figure (a) increases with depression depths.
Resistance variations figure when Fig. 3 is Graphene artificial skin 3 × 4 array device application point contact (a) and linear contact lay (b) that use the present invention to obtain.During to 3 × 4 array device application point pressure and linear pressure, only executing the device resistance increase of stressed position, other position device resistance is without obvious change.
Claims (2)
1. based on an artificial skin for nano-graphene tunneling effect, it is characterized in that, comprising:
Flexible substrate, graphene layer, metal electrode, wherein metal electrode and Graphene composition can the device of perception stress be positioned on flexible substrate;
Wherein, graphene layer is made up of to the Graphene island that hundreds of nanometer is different between a few nanometer yardstick, utilizes the tunneling effect between nano-graphene island to obtain having when the depression depths high sensitivity that is resistance-variableization during 0.1mm several times can the integrated strain gauge of multi-point touch.
2., based on a manufacture method for the artificial skin of nano-graphene tunneling effect, comprise the steps:
1) in silicon oxide substrate, prepare nano-graphene, the nano-graphene island yardstick obtained can between a few nanometer to hundreds of nanometer;
2) be coated with polymethyl methacrylate (PMMA) on nano-graphene surface and dry on hot plate;
3) have the silicon oxide substrate of Graphene to be placed in hydrofluoric acid solution on the surface being coated with PMMA to soak, pick up when it floats on liquid level naturally, in deionized water its surface folding is paved and rinse rear air gun well and blow away surface moisture, be placed in baking on hot plate and ensure that between thin film and flexible substrate, moisture is removed completely;
4) flexible substrate of graphene film is had on surface to be placed in the PMMA that acetone removes its surface;
5) at graphenic surface plated metal as electrode;
6) sample carrying out electrode is carried out secondary graph exposure, by reactive ion etching, unnecessary Graphene is removed after development, with acetone, unnecessary glue is removed afterwards, form yardstick between a few nanometer to the different Graphene island of hundreds of nanometer;
7) tunneling effect between nano-graphene island is utilized to obtain having when the depression depths high sensitivity that is resistance-variableization during 0.1mm several times can the integrated strain gauge of multi-point touch.
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| CN104706335B (en) * | 2013-12-17 | 2018-03-20 | 中国科学院苏州纳米技术与纳米仿生研究所 | Application of the electronic skin in pulse detection, pulse detection system and method |
| CN104555883A (en) * | 2013-10-24 | 2015-04-29 | 中国科学院苏州纳米技术与纳米仿生研究所 | Electronic skin and production method thereof |
| CN105576295B (en) * | 2016-02-02 | 2017-11-17 | 程礼华 | Graphene lithium and almag battery solar integration preparation facilities and technique |
| CN109203518A (en) * | 2018-08-20 | 2019-01-15 | 胡明建 | A kind of design method of plastotype formula robot skin |
| CN109363800A (en) * | 2018-09-28 | 2019-02-22 | 深圳大学 | A kind of graphene nano electronic skin and preparation method thereof based on three-dimensional microstructures |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102509679A (en) * | 2011-11-08 | 2012-06-20 | 福州大学 | Electronic emission source of nanometer material-medium-nanometer material structure |
| CN102804285A (en) * | 2010-02-02 | 2012-11-28 | 希尔莱特有限责任公司 | Doped graphene electronic materials |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100255984A1 (en) * | 2009-04-03 | 2010-10-07 | Brookhaven Science Associates, Llc | Monolayer and/or Few-Layer Graphene On Metal or Metal-Coated Substrates |
| US20100258786A1 (en) * | 2009-04-09 | 2010-10-14 | Northwestern University | Self-assembled organic monolayers on graphene and methods of making and using |
| JP2012015481A (en) * | 2010-06-01 | 2012-01-19 | Sony Corp | Field effect transistor manufacturing method, field effect transistor and semiconductor graphene oxide manufacturing method |
| US9029168B2 (en) * | 2010-06-28 | 2015-05-12 | The Trustees Of Princeton University | Use and making of biosensors utilizing antimicrobial peptides for highly sensitive biological monitoring |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102804285A (en) * | 2010-02-02 | 2012-11-28 | 希尔莱特有限责任公司 | Doped graphene electronic materials |
| CN102509679A (en) * | 2011-11-08 | 2012-06-20 | 福州大学 | Electronic emission source of nanometer material-medium-nanometer material structure |
Non-Patent Citations (1)
| Title |
|---|
| 石墨烯的化学气相沉积法制备;任文才 等;《新型炭材料》;20110208;第26卷(第1期);第71-80页，第4章 石墨烯的转移技术 第4-5段，附图7a * |
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