CN102988120A - Nano graphene tunneling effect based artificial skin and preparation method thereof - Google Patents
Nano graphene tunneling effect based artificial skin and preparation method thereof Download PDFInfo
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- CN102988120A CN102988120A CN2012105745774A CN201210574577A CN102988120A CN 102988120 A CN102988120 A CN 102988120A CN 2012105745774 A CN2012105745774 A CN 2012105745774A CN 201210574577 A CN201210574577 A CN 201210574577A CN 102988120 A CN102988120 A CN 102988120A
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Abstract
The invention discloses a nano graphene tunneling effect based artificial skin and a preparation method thereof. The nano graphene tunneling effect based artificial skin comprises a flexible substrate, a graphene layer and a metal electrode, wherein a device which can sense stresses and is composed of the metal electrode and graphene is located on the flexible substrate. The artificial skin is provided with good features of the graphene and has the advantages of being good in monatomic layer thickness and malleability, high in crushing resistance, good in electrical property and the like.
Description
Technical field
The invention belongs to the nanosecond science and technology field, relate in particular to a kind of artificial skin based on the nano-graphene tunneling effect and preparation method thereof.
Background technology
In everyone organoid, skin is usually ignored by us and is carelessly treated, still; skin is very reliable; it is " patron saint " of our organ and tissue, helps us to avoid injury by transmitting various sensations, guarantees that we are under the suitable temperature and environment.
Recent years, artifucial limb is more and more perfect, even but the most delicate impression that best artifucial limb does not have human body skin to have yet that is to say that artifucial limb does not touch others or touched the warmth that brings by others to be felt.Yet new electronics skin is come out of the stove and is gathered around tactile artifucial limb and stepped major step near towards producing.But the people such as Philips's rice rattan Dorr Fu Er of Germany make the circuit board of simulating human skin light touch by integrated infrared sensor and temperature sensor.The history Tiffany at univ cambridge uk's nano science center draws the storehouse to produce the circuit that can nondestructively stretch and be out of shape at a transparent elastic silica gel in addition.This elastomeric material can wrap up extremity, finger, is expected to be applied to skin transplantation even skin is used as the fields such as touch screen interface.Can stretch, have the character such as sense of touch, energy sensing but manufacturing " artificial skin " needs it to have, this just calls a kind of appearance of new material.
Graphene is by sp
2The hexagonal primitive unit cell monoatomic layer crystal that the carbon atom of hydridization forms, it is human the first two-dimensional material truly of finding, its thickness only has dust to arrive nanometer scale, and its size is generally in micron dimension, aspect ratio is very big, be the twice of carbon pipe, thereby be a kind of nano material with " macro-size ".Because the effect of the Van der Waals between Graphene and the substrate surface shows as a two dimensional surface on the macroscopic view.Therefore the application for Graphene has just had all more options, comprise cutting out being the graphene nano band, or the two dimensional surface electronic device.
Graphene is known the firmest the thinnest and ductility best material, and its Young's modulus can surpass 1TPa, and Graphene has very high electricity quality, and at room temperature its carrier mobility is up to 200,000cm
2V
-1s
-1, ballistic transport length can reach sub-micrometer scale, and these characteristics are all indicating its wide application prospect aspect nano-sensor.
There have been some to utilize Graphene to prepare the report of single strain gauge method in the prior art, mainly comprised: one, will peel off on Graphene suspension and the substrate, and utilize its good mechanical strength to make reusable strain gauge.Two, utilize chemical vapour deposition (CVD) (CVD) method to prepare the large tracts of land graphene film, the regular variation of its electrical resistance strain when applying larger stress.Three, for graphene composite material, different with tensile stress according to applying compressive stress, composite overlap-add region area change or minimizing and cause the respective change of resistance.
Summary of the invention
The object of the present invention is to provide a kind of artificial skin based on the nano-graphene tunneling effect, this artificial skin is highly sensitive, and it is less to be affected by the external environment, and good stability is repeatable high.
A kind of artificial skin based on the nano-graphene tunneling effect provided by the invention comprises:
Flexible substrate, graphene layer, metal electrode, but wherein metal electrode and the Graphene device that forms perception stress is positioned on the flexible substrate.
The manufacture method of a kind of artificial skin based on the nano-graphene tunneling effect of the present invention comprises the steps:
1) prepares nano-graphene in silicon oxide substrate;
2) be coated with polymethyl methacrylate (PMMA) and dry at hot plate on the nano-graphene surface;
The surface that 3) will be coated with PMMA has the silicon oxide substrate of Graphene to place hydrofluoric acid solution to soak, treat to pick up when it floats on the liquid level naturally, blow away surface moisture with air gun after in deionized water, its surface folding being paved and rinse well, place that baking guarantees that moisture is removed fully between thin film and the flexible substrate on the hot plate;
4) surface there is the flexible substrate of graphene film place acetone to remove its surperficial PMMA;
5) at Graphene surface deposition metal as electrode;
6) sample that will carry out electrode carries out the secondary graph exposure, by reactive ion etching unnecessary Graphene is removed after developing, and with acetone unnecessary glue is removed afterwards.
Advantage of the present invention:
1) artificial skin that utilizes method of the present invention to prepare has the good characteristic of Graphene, has the characteristics such as monoatomic layer thickness, ductility is good, crushing resistance is strong, electrical properties is superior;
2) device of method processing of the present invention has superior device performance.Resistance-variableization is several times when pressing down the degree of depth and be 0.1mm, because tunnelling distance and tunneling barrier are only depended in the sensitivity of device, is its intrinsic attribute, and it is less to be affected by the external environment, and good stability is repeatable high;
3) therefore the response of depending on substrate of its response time of artificial skin of obtaining of method of the present invention and relaxation time can accomplish the extraneous touching information of Real-time Obtaining for the short substrate of response time;
4) method of the present invention and existing semiconducter process are compatible, satisfy the demand of large-scale integrated based on the artificial skin of nano-graphene tunneling effect, can be mass.
5) short based on the artificial skin fabrication cycle of nano-graphene, the material price of use is cheap, greatly reduces energy consumption and the cost of manufacturing process.
More than these characteristics so that this new artificial skin based on the nano-graphene tunneling effect has good application potential and using value widely.
Description of drawings
Fig. 1 is the implementation step sketch map of preparation method of the present invention;
Fig. 2 is that the nano-graphene artificial skin individual devices electrical resistance when contact is arranged that uses the present invention to obtain presses down the increase of the degree of depth and increases.(a) figure is different when pressing down the degree of depth, the current/voltage characteristic curve chart of device; (b) figure is with the variation diagram that presses down the degree of depth and increase by the device resistance that obtains of figure (a).
Fig. 3 is Graphene artificial skin 3 * 4 array device application points contacts (a) of using the present invention to obtain resistance variations figure when contacting (b) with line.
The specific embodiment
Artificial skin of the present invention based on Graphene be known the thinnest the firmest and ductility best material, can stretch, the characteristics such as electrical properties is good, but utilize tunneling effect between the nano-graphene island to obtain having the integrated strain gauge of high sensitivity multi-point touch.Graphene film is comprised of to the different Graphene island of hundreds of nanometer between several nanometers yardstick.The good Graphene of growing is transferred on the transparent flexible substrate (dimethyl siloxane PDMS/ poly terephthalic acid PET), utilized traditional little manufacturing process to make integrated small scale nano-graphene sensor.Because tunneling effect, resistance has indicial response to the tunnelling distance, and corresponding when applying different stress, the resistance that obtains has significant regular variation.
Further specify below by specific embodiment.
Nano-graphene artificial skin and characteristic test that chemical vapour deposition (CVD) (PECVD) method of utilizing plasma to strengthen obtains.
1, by the PECVD method with the Graphene Direct precipitation to the silicon oxide liner basal surface, specifically growth conditions is: 525 ° of C of temperature, methane gas flow 30SCCM, pressure 0.2Torr, plasma power 100W, growth time 2.5 hours.
2, the oxidized silicon chip surface of growing graphene is coated with 5% 950PMMA, and the speed of being coated with is altogether 1min of 3000r/min, toasts 3min at 180 ° of C hot plates.
The surface that 3, will be coated with PMMA has the silicon oxide substrate of Graphene to place 10% hydrofluoric acid solution to soak several hours, pick up with PDMS/PET when treating that it floats on the liquid level naturally, blow away surface moisture with air gun after in deionized water, its surface folding being paved and rinse well, place on 110 ° of C hot plates and toast half an hour, guarantee moisture removal between thin film and the flexible substrate.
4, shifting good surface has the flexible substrate of graphene film to place acetone to remove its surperficial PMMA.
5, be coated with one deck S1813 glue at sample, speed is 4500 rev/mins, 115 ° of C hot plate bakings 1 minute, the electrode structure that utilizes the exposure of ultraviolet photolithographic technology to design, utilize the electron beam evaporation system to steam Ti/Au ~ 2nm/30nm after the development, then remove with acetone and remove unnecessary S1813 glue (lift-off), obtain electrode.
6, the sample that will carry out electrode carries out the exposure of quadratic diagram shape after being coated with S1813 glue, by reactive ion etching unnecessary Graphene is removed after developing, and with acetone unnecessary glue is removed afterwards, has so just obtained complete device.
7, completed device links to each other with external measurement devices, can produce deformation and then cause the variation of resistance when device is contacted by object.We have measured respectively individual devices and a plurality of integrated device change in electrical properties when pressing down the degree of depth and increase.
The artificial skin structure that the present invention prepares as shown in Figure 1, the artificial skin for preparing comprises flexible substrate and is positioned at the stress sensing device that is made of Graphene and metal electrode on the flexible substrate.
Fig. 2 is that the nano-graphene artificial skin individual devices electrical resistance when contact is arranged that uses the present invention to obtain presses down the increase of the degree of depth and increases.(a) figure is different when pressing down the degree of depth, the current/voltage characteristic curve chart of device; (b) figure is with the variation diagram that presses down the degree of depth and increase by the device resistance that obtains of figure (a).
Fig. 3 is Graphene artificial skin 3 * 4 array device application points contacts (a) of using the present invention to obtain resistance variations figure when contacting (b) with line.During to 3 * 4 array device application point pressure and linear pressure, only increase in the position device resistance of exerting pressure, other position device resistance is without obvious change.
Claims (2)
1. the artificial skin based on the nano-graphene tunneling effect is characterized in that, comprising:
Flexible substrate, graphene layer, metal electrode, but wherein metal electrode and the Graphene device that forms perception stress is positioned on the flexible substrate.
2. this kind comprises the steps: based on the manufacture method of the artificial skin of nano-graphene tunneling effect
1) prepares nano-graphene in silicon oxide substrate;
2) be coated with polymethyl methacrylate (PMMA) and dry at hot plate on the nano-graphene surface;
The surface that 3) will be coated with PMMA has the silicon oxide substrate of Graphene to place hydrofluoric acid solution to soak, treat to pick up when it floats on the liquid level naturally, blow away surface moisture with air gun after in deionized water, its surface folding being paved and rinse well, place that baking guarantees that moisture is removed fully between thin film and the flexible substrate on the hot plate;
4) surface there is the flexible substrate of graphene film place acetone to remove its surperficial PMMA;
5) at Graphene surface deposition metal as electrode;
6) sample that will carry out electrode carries out the secondary graph exposure, by reactive ion etching unnecessary Graphene is removed after developing, and with acetone unnecessary glue is removed afterwards.
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| CN201210574577.4A CN102988120B (en) | 2012-12-26 | 2012-12-26 | A kind of artificial skin based on nano-graphene tunneling effect and preparation method thereof |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104555883A (en) * | 2013-10-24 | 2015-04-29 | 中国科学院苏州纳米技术与纳米仿生研究所 | Electronic skin and production method thereof |
| CN104706335A (en) * | 2013-12-17 | 2015-06-17 | 中国科学院苏州纳米技术与纳米仿生研究所 | Application of electronic skin to pulse detection and pulse detection system and method |
| CN105576295A (en) * | 2016-02-02 | 2016-05-11 | 程礼华 | Solar integrated preparation device and process for graphene lithium and aluminum magnesium alloy battery |
| CN109203518A (en) * | 2018-08-20 | 2019-01-15 | 胡明建 | A kind of design method of plastotype formula robot skin |
| CN109363800A (en) * | 2018-09-28 | 2019-02-22 | 深圳大学 | A kind of graphene nano electronic skin and preparation method thereof based on three-dimensional microstructures |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100255984A1 (en) * | 2009-04-03 | 2010-10-07 | Brookhaven Science Associates, Llc | Monolayer and/or Few-Layer Graphene On Metal or Metal-Coated Substrates |
| US20100258786A1 (en) * | 2009-04-09 | 2010-10-14 | Northwestern University | Self-assembled organic monolayers on graphene and methods of making and using |
| CN102270665A (en) * | 2010-06-01 | 2011-12-07 | 索尼公司 | Field effect transistor manufacturing method, field effect transistor, and semiconductor graphene oxide manufacturing method |
| CN102509679A (en) * | 2011-11-08 | 2012-06-20 | 福州大学 | Electronic emission source of nanometer material-medium-nanometer material structure |
| US20120156688A1 (en) * | 2010-06-28 | 2012-06-21 | Mcalpine Michael C | Use and making of biosensors utilizing antimicrobial peptides for highly sensitive biological monitoring |
| CN102804285A (en) * | 2010-02-02 | 2012-11-28 | 希尔莱特有限责任公司 | Doped graphene electronic materials |
-
2012
- 2012-12-26 CN CN201210574577.4A patent/CN102988120B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100255984A1 (en) * | 2009-04-03 | 2010-10-07 | Brookhaven Science Associates, Llc | Monolayer and/or Few-Layer Graphene On Metal or Metal-Coated Substrates |
| US20100258786A1 (en) * | 2009-04-09 | 2010-10-14 | Northwestern University | Self-assembled organic monolayers on graphene and methods of making and using |
| CN102804285A (en) * | 2010-02-02 | 2012-11-28 | 希尔莱特有限责任公司 | Doped graphene electronic materials |
| CN102270665A (en) * | 2010-06-01 | 2011-12-07 | 索尼公司 | Field effect transistor manufacturing method, field effect transistor, and semiconductor graphene oxide manufacturing method |
| US20120156688A1 (en) * | 2010-06-28 | 2012-06-21 | Mcalpine Michael C | Use and making of biosensors utilizing antimicrobial peptides for highly sensitive biological monitoring |
| CN102509679A (en) * | 2011-11-08 | 2012-06-20 | 福州大学 | Electronic emission source of nanometer material-medium-nanometer material structure |
Non-Patent Citations (1)
| Title |
|---|
| 任文才 等: "石墨烯的化学气相沉积法制备", 《新型炭材料》 * |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104555883A (en) * | 2013-10-24 | 2015-04-29 | 中国科学院苏州纳米技术与纳米仿生研究所 | Electronic skin and production method thereof |
| CN104706335A (en) * | 2013-12-17 | 2015-06-17 | 中国科学院苏州纳米技术与纳米仿生研究所 | Application of electronic skin to pulse detection and pulse detection system and method |
| CN105576295A (en) * | 2016-02-02 | 2016-05-11 | 程礼华 | Solar integrated preparation device and process for graphene lithium and aluminum magnesium alloy battery |
| CN105576295B (en) * | 2016-02-02 | 2017-11-17 | 程礼华 | Graphene lithium and almag battery solar integration preparation facilities and technique |
| CN109203518A (en) * | 2018-08-20 | 2019-01-15 | 胡明建 | A kind of design method of plastotype formula robot skin |
| CN109363800A (en) * | 2018-09-28 | 2019-02-22 | 深圳大学 | A kind of graphene nano electronic skin and preparation method thereof based on three-dimensional microstructures |
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| CN102988120B (en) | 2015-10-14 |
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