CN107991803A - A kind of production method of black matrix" - Google Patents
A kind of production method of black matrix" Download PDFInfo
- Publication number
- CN107991803A CN107991803A CN201711448048.9A CN201711448048A CN107991803A CN 107991803 A CN107991803 A CN 107991803A CN 201711448048 A CN201711448048 A CN 201711448048A CN 107991803 A CN107991803 A CN 107991803A
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- China
- Prior art keywords
- black matrix
- substrate
- alignment mark
- production method
- photoresist
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133512—Light shielding layers, e.g. black matrix
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70066—Size and form of the illuminated area in the mask plane, e.g. reticle masking blades or blinds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
- G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Optical Filters (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
The present invention provides a kind of production method of black matrix", include the following steps：One substrate is provided, alignment mark is provided with the substrate；A black matrix film is coated on the substrate；The substrate for being coated with black matrix film is put into exposure machine, and the substrate is aligned in advance, and the labelling apparatus is moved to the top of the alignment mark, and processing is marked, and obtains photoresist mark；According to the position of alignment mark described in the photoresist marker recognition, after carrying out exactitude position, the black matrix film is patterned, forms black matrix".The present invention provides a kind of production method of black matrix", before to substrate align in advance, black photoresist above alignment mark is carried out by thickness thinning or removal by labelling apparatus, so as to facilitate the identification of the alignment mark, and then improves the producing efficiency of black matrix".
Description
Technical field
The present invention relates to display technology field, and in particular to a kind of production method of black matrix".
Background technology
Usual liquid crystal display panel is by color film (CF, Color Filter) substrate, thin film transistor (TFT) (TFT, Thin Film
Transistor) array base palte, the liquid crystal (LC, the Liquid that are sandwiched between color membrane substrates and thin-film transistor array base-plate
Crystal) and sealing glue frame (Sealant) composition, its moulding process generally comprise：Leading portion array (Array) processing procedure (film,
Yellow light, etching and stripping), stage casing (drives into box (Cell) processing procedure (TFT substrate is bonded with CF substrates) and back segment module group assembling processing procedure
Dynamic IC is pressed with printed circuit board (PCB)).Wherein, leading portion Array processing procedures mainly form TFT substrate, in order to control liquid crystal molecule
Movement；Stage casing Cell processing procedures mainly add liquid crystal between TFT substrate and CF substrates；Back segment module group assembling processing procedure is mainly
IC pressings and the integration of printed circuit board (PCB) are driven, and then drives liquid crystal molecule to rotate, shows image.
In traditional liquid crystal display panel, it will usually made in color membrane substrates side one layer of black matrix" (BM,
BlackMatrix), for splitting adjacent color blocking, the gap of color is blocked, prevents light leak or colour mixture；And by black matrix" system
The standby technology in tft array substrate is called BOA (BMOnArray, black matrix" are attached at array base palte), and BOA can be solved
Infrabasal plate dislocation causes the unmatched problem of lightproof area, this to be particularly useful to flexible displays.COA(Color filter
OnArray) technology is a kind of technology by the RGB color being prepared in originally on color membrane substrates resistance preparation on tft array substrate,
COA technologies can improve the signal delay on metal wire, there is provided panel aperture opening ratio, improves Display panel quality.
Fig. 1 is that the schematic diagram after black matrix" is made on color membrane substrates 1, as shown in Figure 1, black matrix" 13 is color film base
First of processing procedure of plate 1, therefore without reference to the alignment mark (mark) of preceding processing procedure in the preparation process of black matrix".And
In the liquid crystal display panel of BOA frameworks, since black matrix" is made in tft array substrate side, before black matrix" is prepared,
The processing procedure of other patterns has been carried out, thus before being needed to refer to when preparing black matrix" processing procedure alignment mark, but due to
Black matrix" has higher OD value (OD, optical density), therefore the knowledge to light shield alignment mark after coating
Do not interfere, exposure machine may be caused not align.If it is desired that with the black battle array material of relatively low OD value, can increase
The recognition capability of alignment mark after coating, but the shaded effect of black matrix" can be severely impacted.
Fig. 2 is the schematic diagram after painting black matrix film 23 on tft array substrate 21, from figure 2 it can be seen that
On tft array substrate 21 after painting black matrix film 23, the black matrix film 23 blocks alignment mark 22 completely.Cause
There is an urgent need for a kind of production method for the black matrix" that can be solved the above problems at present for this.
The content of the invention
The present invention provides a kind of production method of black matrix", to solve pair of the substrate in black matrix" preparation process
The problem of position mark is difficult to.
To achieve the above object, technical solution provided by the invention is as follows：
The present invention provides a kind of production method of black matrix", include the following steps：
Step S10, one substrate is provided, alignment mark is provided with the substrate；
Step S20, a black matrix film is coated on the substrate, and the black matrix film is by black photoresist system
It is standby；
Step S30, the substrate for being coated with the black matrix film is put into exposure machine, and to the substrate into
The labelling apparatus of the exposure machine, is then moved to the top of the alignment mark, on the alignment mark by the pre- contraposition of row
Processing is marked in black photoresist corresponding to side, obtains photoresist mark；
Step S40, the position of alignment mark according to the photoresist marker recognition, after carrying out exactitude position, patterning
The black matrix film, forms black matrix".
According to one preferred embodiment of the present invention, the labelling apparatus is the laser head with predetermined luminous intensity.
According to one preferred embodiment of the present invention, the step 30 includes：The laser head is moved to the alignment mark
Top, the black photoresist corresponding to above the alignment mark is irradiated, corresponding to above the alignment mark
Black photoresist carries out thickness thinning or removal, obtains photoresist mark.
According to one preferred embodiment of the present invention, the substrate is rectangular configuration, and the alignment mark is divided into four groups of register guides
Note, is respectively arranged at four angles of the rectangle.
According to one preferred embodiment of the present invention, each group of alignment mark includes at least one alignment mark main body, described right
The length of side of position tag body is in the range of 60 microns to 140 microns.
According to one preferred embodiment of the present invention, projected spot diameter of the high illumination laser head on the black photoresist
For 150 microns to 200 microns.
According to one preferred embodiment of the present invention, the illumination of the high illumination laser head is 105To 106It is megawatt every square centimeter.
According to one preferred embodiment of the present invention, in the step S30, pre- contraposition is carried out to the substrate is：By the base
The photomask of plate and the exposure machine is aligned in advance, and aligning accuracy is ± 30 microns.
According to one preferred embodiment of the present invention, in the step S30, before to the substrate align in advance, further include
Placement environment to the substrate carries out suction application of vacuum.
According to one preferred embodiment of the present invention, the step S40 is specifically included：
Step S41, the position of alignment mark according to the photoresist marker recognition, carries out exactitude position；
Step S42, adjust distance of the photomask with the substrate of the exposure machine, to the black matrix film into
Row exposure；
Step S43, the substrate is taken out, and the black matrix film is developed and toasted, completes the black
The patterning of matrix film, forms the black matrix".
It is an advantage of the current invention that a kind of production method of black matrix" is provided, before to substrate align in advance,
Black photoresist above alignment mark is carried out by thickness thinning or removal by labelling apparatus, so as to facilitate the alignment mark
Identification, and then improve the producing efficiency of black matrix".
Brief description of the drawings
, below will be to embodiment or the prior art in order to illustrate more clearly of embodiment or technical solution of the prior art
Attached drawing is briefly described needed in description, it should be apparent that, drawings in the following description are only some invented
Embodiment, for those of ordinary skill in the art, without creative efforts, can also be attached according to these
Figure obtains other attached drawings.
Fig. 1 is that the schematic diagram after black matrix" is made on color membrane substrates；
Fig. 2 is the schematic diagram after painting black matrix photoresist system on array base palte；
Fig. 3 is the flow diagram of black matrix" production method in the present invention；
Fig. 4 a-4e are the flowage structure schematic diagram of black matrix" production method in the present invention.
Embodiment
The explanation of following embodiment is with reference to additional diagram, to illustrate the particular implementation that the present invention can be used to implementation
Example.The direction term that the present invention is previously mentioned, such as [on], [under], [preceding], [rear], [left side], [right side], [interior], [outer], [side]
Deng being only the direction with reference to annexed drawings.Therefore, the direction term used is to illustrate and understand the present invention, and is not used to
The limitation present invention.In figure, the similar unit of structure is with being given the same reference numerals.
The present invention is described further with specific embodiment below in conjunction with the accompanying drawings：
The flow chart of black matrix" production method in one embodiment of the invention is illustrated in figure 3, is illustrated, Fig. 4 a-4d are this
Invent the flowage structure schematic diagram of black matrix" in an embodiment.
As shown in fig. 4 a, step S 10, a substrate 31 is provided, be provided with alignment mark 32 on the substrate 31；
In the present invention, the substrate 31 is thin-film transistor array base-plate 31, to the thin film transistor (TFT) array base
Before preparing black matrix" on plate 31, the processing procedure of other patterns has been carried out, therefore need to refer to when preparing black matrix"
The alignment mark of preceding processing procedure.
Preferably, substrate 31 is rectangular configuration, and the alignment mark 32 divides for four groups of alignment marks 32, each group of register guide
Note 32 is respectively arranged at four angles of the rectangle.
The alignment mark is preferably square, it is not limited to square, or cross, circle, diamond shape
Deng.
Correspondingly, the alignment mark 32 both can be very thin one layer, or substantially protrude from the register guide
Region near note 32；When alignment mark 32 is very thin one layer, the film forming of black matrix film 33 can be conducive to；When right
When position mark 32 is substantially raised in region near the alignment mark 32, the acquisition of alignment mark 32 can be facilitated.
In the present invention, each group of alignment mark includes at least one alignment mark main body, the alignment mark main body
The length of side is in the range of 60 microns to 140 microns, and such setting can, when carrying out the pre- contraposition of substrate 31, only to make
The pre- alignment operation of substrate 31 can be carried out with one group of alignment mark 32.
As shown in Figure 4 b, a black matrix film 33a step S20, is coated on the substrate 31, the black matrix" is thin
Film 33 is prepared by black photoresist；
Wherein, the black matrix film 33a is covered in the surface of the substrate 31 and the alignment mark 32.
As shown in Fig. 4 c, 4d, the substrate 31 for step S30, being coated with the black matrix film 33a is put into exposure
In machine, and the substrate 31 is aligned in advance, the labelling apparatus 4 of the exposure machine is then moved to the alignment mark 32
Top, the black photoresist corresponding to above the alignment mark 32 is marked processing, obtains photoresist mark 34；It is preferred that
, the labelling apparatus 4 is the laser head with predetermined luminous intensity.
Wherein, the step S30 includes, and the laser head is moved to the top of the alignment mark 32, to described
Black photoresist corresponding to the top of alignment mark 32 is irradiated, by the black photoresist corresponding to the top of alignment mark 32 into
The thinning of row thickness or removal, and then obtain the photoresist mark 34 easy to catch.
In one embodiment of the invention, transmission spot diameter of the laser head on the black photoresist for 150 microns extremely
200 microns, the length of side of alignment mark 32 is in the range of 60 microns to 140 microns, so designing so that the high illumination
The alignment mark 32 can be completely covered in the transmission range of laser head, so that the photoresist mark 34 can be passed intuitively
Pass and remove complete alignment mark information.
Preferably, the illumination of the high illumination laser head is 105To 106It is megawatt every square centimeter.
It is to be understood that in step s 30, pre- contraposition is carried out to the substrate 31 and is referred to：By the substrate 31 with
The photomask of the exposure machine is aligned in advance, and aligning accuracy is ± 30 microns.
Have on the photomask of the exposure machine and described will be aligned with the 32 corresponding pattern of alignment mark, contraposition
Mark 32 and the corresponding pattern of the photomask of the exposure machine are aligned, the light of the alignment mark 32 and the exposure machine
The difference of the corresponding pattern geometric center of mask is aligning accuracy.This technique is controlled by mechanical structure.
In step S30, before to the substrate align in advance, further include the placement environment to the substrate and inhale very
Vacancy is managed, so as to avoid the impurity effect operating procedure in air.
As shown in fig 4e, the position of the alignment mark 32 step S40, is identified according to the photoresist mark 34, carries out essence
Really after contraposition, the black matrix film 33a is patterned, forms black matrix" 33b.
Specifically, the step S40 includes：
Step S41, the position of the alignment mark 32 is identified according to the photoresist mark 34, carries out exactitude position；
Step S42, distance of the photomask with the substrate 31 of the exposure machine is adjusted, to the black matrix film
33a is exposed；
Step S43, the substrate 31 is taken out, and the black matrix film 33a is developed and toasted, described in completion
The patterning of black matrix film 33a, forms black matrix" 33b.
Wherein, the photomask and the technique of the distance of the substrate 31 for adjusting the exposure machine are, by described in control
The rising of substrate 31, is gradually reduced the distance of photomask lower surface to 31 upper surface of substrate of the exposure machine, Zhi Daoda
Untill pre-determined distance.In the present invention, by control the photomask of the exposure machine and the distance of the substrate 31 and then
Control the set size of the black matrix film 33a exposing patterns.
The present invention provides a kind of production method of black matrix", before to substrate align in advance, is filled by marking
Put the black photoresist above alignment mark and carry out thickness thinning or removal, so that the identification of the alignment mark is facilitated,
And then improve the producing efficiency of black matrix".
In conclusion although the present invention is disclosed above with preferred embodiment, above preferred embodiment simultaneously is not used to limit
The system present invention, those of ordinary skill in the art, without departing from the spirit and scope of the present invention, can make various changes and profit
Decorations, therefore protection scope of the present invention is subject to the scope that claim defines.
Claims (10)
1. a kind of production method of black matrix", it is characterised in that include the following steps：
Step S10, one substrate is provided, alignment mark is provided with the substrate；
Step S20, a black matrix film is coated on the substrate, and the black matrix film is prepared by black photoresist；
Step S30, the substrate for being coated with the black matrix film is put into exposure machine, and the substrate is carried out pre-
The labelling apparatus of the exposure machine, is then moved to the top of the alignment mark, the institute above the alignment mark by contraposition
Processing is marked in corresponding black photoresist, obtains photoresist mark；
Step S40, the position of alignment mark according to the photoresist marker recognition, after carrying out exactitude position, described in patterning
Black matrix film, forms black matrix".
2. the production method of black matrix" according to claim 1, it is characterised in that the labelling apparatus is with predetermined
The laser head of illumination.
3. the production method of black matrix" according to claim 2, it is characterised in that the step S30 includes：By described in
Laser head is moved to the top of the alignment mark, and the black photoresist corresponding to above the alignment mark is irradiated, will
Black photoresist corresponding to above the alignment mark carries out thickness thinning or removal, obtains photoresist mark.
4. the production method of black matrix" according to claim 2, it is characterised in that the substrate is rectangular configuration, four
The group alignment mark is respectively arranged at four angles of the rectangle.
5. the production method of black matrix" according to claim 4, it is characterised in that each group of alignment mark is included at least
One alignment mark main body, the length of side of the alignment mark main body are in the range of 60 microns to 140 microns.
6. the production method of black matrix" according to claim 5, it is characterised in that the laser head is in the black light
A diameter of 150 microns to 200 microns of projected spot in resistance.
7. the production method of black matrix" according to claim 2, it is characterised in that the illumination of the laser head is 105Extremely
106It is megawatt every square centimeter.
8. the production method of black matrix" according to claim 1, it is characterised in that in the step S30, to the base
Plate carries out pre- contraposition：
The photomask of the substrate and the exposure machine is aligned in advance, aligning accuracy is ± 30 microns.
9. the production method of black matrix" according to claim 1, it is characterised in that in the step S30, to described
Substrate is carried out before aligning in advance, is further included：
Placement environment to the substrate carries out suction application of vacuum.
10. the production method of black matrix" according to claim 1, it is characterised in that the step S40 is specifically included：
Step S41, the position of alignment mark according to the photoresist marker recognition, carries out exactitude position；
Step S42, distance of the photomask with the substrate of the exposure machine is adjusted, the black matrix film is exposed
Light；
Step S43, the substrate is taken out, and the black matrix film is developed and toasted, completes the black matrix"
The patterning of film, forms the black matrix".
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711448048.9A CN107991803A (en) | 2017-12-27 | 2017-12-27 | A kind of production method of black matrix" |
| PCT/CN2018/124062 WO2019129109A1 (en) | 2017-12-27 | 2018-12-26 | Method for fabricating black matrix |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711448048.9A CN107991803A (en) | 2017-12-27 | 2017-12-27 | A kind of production method of black matrix" |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107991803A true CN107991803A (en) | 2018-05-04 |
Family
ID=62042477
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711448048.9A Pending CN107991803A (en) | 2017-12-27 | 2017-12-27 | A kind of production method of black matrix" |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN107991803A (en) |
| WO (1) | WO2019129109A1 (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109031713A (en) * | 2018-07-27 | 2018-12-18 | 南京中电熊猫平板显示科技有限公司 | A kind of substrate orientation detection method and its detection device |
| WO2019129109A1 (en) * | 2017-12-27 | 2019-07-04 | 武汉华星光电技术有限公司 | Method for fabricating black matrix |
| CN110764294A (en) * | 2019-06-11 | 2020-02-07 | 惠科股份有限公司 | Display panel and display device |
| CN110764305A (en) * | 2019-06-11 | 2020-02-07 | 惠科股份有限公司 | Display panel and display device |
| CN111077744A (en) * | 2020-01-03 | 2020-04-28 | Tcl华星光电技术有限公司 | Array substrate preparation method, array substrate and liquid crystal display panel |
| US11194199B2 (en) | 2020-01-03 | 2021-12-07 | Tcl China Star Optoelectronics Technology Co., Ltd | Method of manufacturing array substrate, array substrate, and LCD panel |
| CN115642212A (en) * | 2022-11-01 | 2023-01-24 | 佛山思坦半导体科技有限公司 | Manufacturing method of micro display device, micro display device and micro display device |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110764327A (en) * | 2019-10-22 | 2020-02-07 | 深圳市华星光电技术有限公司 | Array substrate and preparation method thereof |
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| TW201312212A (en) * | 2009-06-15 | 2013-03-16 | Au Optronics Corp | Active device array substrate and display panel |
| CN104765190A (en) * | 2015-04-28 | 2015-07-08 | 深圳市华星光电技术有限公司 | Manufacturing method of black matrix |
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- 2018-12-26 WO PCT/CN2018/124062 patent/WO2019129109A1/en active Application Filing
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| TW201312212A (en) * | 2009-06-15 | 2013-03-16 | Au Optronics Corp | Active device array substrate and display panel |
| JP2015138181A (en) * | 2014-01-23 | 2015-07-30 | 凸版印刷株式会社 | Color filter substrate, liquid crystal display cell, and manufacturing method of liquid crystal display cell |
| CN104765190A (en) * | 2015-04-28 | 2015-07-08 | 深圳市华星光电技术有限公司 | Manufacturing method of black matrix |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019129109A1 (en) * | 2017-12-27 | 2019-07-04 | 武汉华星光电技术有限公司 | Method for fabricating black matrix |
| CN109031713A (en) * | 2018-07-27 | 2018-12-18 | 南京中电熊猫平板显示科技有限公司 | A kind of substrate orientation detection method and its detection device |
| CN109031713B (en) * | 2018-07-27 | 2020-12-25 | 南京中电熊猫平板显示科技有限公司 | Substrate alignment detection method and detection device thereof |
| CN110764294A (en) * | 2019-06-11 | 2020-02-07 | 惠科股份有限公司 | Display panel and display device |
| CN110764305A (en) * | 2019-06-11 | 2020-02-07 | 惠科股份有限公司 | Display panel and display device |
| CN110764294B (en) * | 2019-06-11 | 2020-11-24 | 惠科股份有限公司 | Display panel and display device |
| CN111077744A (en) * | 2020-01-03 | 2020-04-28 | Tcl华星光电技术有限公司 | Array substrate preparation method, array substrate and liquid crystal display panel |
| WO2021134833A1 (en) * | 2020-01-03 | 2021-07-08 | Tcl华星光电技术有限公司 | Array substrate preparation method, array substrate, and liquid crystal display panel |
| US11194199B2 (en) | 2020-01-03 | 2021-12-07 | Tcl China Star Optoelectronics Technology Co., Ltd | Method of manufacturing array substrate, array substrate, and LCD panel |
| CN115642212A (en) * | 2022-11-01 | 2023-01-24 | 佛山思坦半导体科技有限公司 | Manufacturing method of micro display device, micro display device and micro display device |
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| Publication number | Publication date |
|---|---|
| WO2019129109A1 (en) | 2019-07-04 |
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