CN106054482A - Array substrate, method for manufacturing same and display device - Google Patents
Array substrate, method for manufacturing same and display device Download PDFInfo
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- CN106054482A CN106054482A CN201610682390.4A CN201610682390A CN106054482A CN 106054482 A CN106054482 A CN 106054482A CN 201610682390 A CN201610682390 A CN 201610682390A CN 106054482 A CN106054482 A CN 106054482A
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- alignment mark
- black matrix
- array base
- base palte
- cover layer
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
- G02F1/136295—Materials; Compositions; Manufacture processes
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Filters (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
The invention provides an array substrate, a method for manufacturing the same and a display device. The method for manufacturing the array substrate includes forming alignment mark covering layers in certain regions of a corresponding substrate by the aid of picture composition processes; forming a black matrix film in regions outside alignment marks on the substrate; removing the alignment mark covering layers by means of exposure so as to expose the alignment marks; carrying out picture composition processes on the black matrix film to form patterns of black matrixes. The alignment marks are formed in the certain regions of the corresponding substrate. Exposure wavelengths of the alignment mark covering layers are different from exposure wavelengths of the black matrix film. The array substrate, the method and the display device have the advantages that interference of black matrix films with high optical density (the optical density is usually higher than or equal to 4.0) on alignment mark recognizing, grasping and positioning in exposure procedures can be prevented by the aid of the method, the alignment marks can be accurately aligned by the black matrix film during exposure, accordingly, the exposure precision of the black matrixes can be improved, and the exposure quality and the performance of the array substrate can be enhanced.
Description
Technical field
The present invention relates to Display Technique field, in particular it relates to a kind of array base palte and preparation method thereof and display device.
Background technology
In tft liquid crystal display TFT-LCD field, typically by sealed plastic box (Sealant) by coloured silk film CF substrate
It is combined with array Array substrate junction.In traditional display panels, generally prepare in color film CF substrate side one layer black
Matrix (BM, Black Matrix), is used for separating each sub-pixels, blocks the space between each sub-pixels, prevent colour mixture and
Light leak；And by color film CF substrate or the preparation of black matrix BM, the technology on array Array substrate is called COA (CF On
Array, CF substrate is attached at Array substrate) or BOA (BM On Array, BM are attached at Array substrate), COA and BOA can
With the unmatched problem of BM lightproof area and Array light leak region solving array base palte, the involutory dislocation of color membrane substrates is caused,
Promote pixel aperture ratio and panel transmitance, flexible displays is particularly useful.
But owing to black matrix BM has higher optical density OD, after being directly coated with BM photoresistance glue on Array substrate, exposure
The exposure light that equipment often uses cannot penetrate BM layer, thus black matrix mask plate BM Mask can be disturbed right on Array substrate
The identification of alignment mark Mark, capture and position so that black matrix mask plate BM Mask cannot be carried out accurately with Array substrate
Para-position, causes exposure machine can only rely on equipment self and Array substrate and the physical mechanical pair of black matrix mask plate BM Mask
Position, and cannot correct in advance with reference to above-mentioned alignment mark Mark and adjust, greatly reduce the exposure accuracy of BM, cause battle array
Black matrix figure total spacing TP of BM Pattern (Total Pitch) error on row substrate is big, i.e. BM Pattern exposure
Actual value and design load deviation CD Bias are relatively big, ultimately result in array base palte entirety face quality and dysfunction.
Summary of the invention
The present invention is directed to above-mentioned technical problem present in prior art, it is provided that a kind of array base palte and preparation method thereof and
Display device.The preparation method of this array base palte is it can be avoided that the black matrix film of higher optical density (optical density is generally >=4.0) exists
To the identification of alignment mark in exposure process, capture and position the interference caused, enable black matrix film when exposure by right
Position labelling exactitude position, thus not only increases the exposure accuracy of black matrix, and improve array base palte exposure quality and
Performance.
The present invention provides the preparation method of a kind of array base palte, including: step S1: use patterning processes in corresponding substrate
The region being formed with alignment mark forms alignment mark cover layer；
Step S2: the region beyond the most described alignment mark forms black matrix film；
Step S3: by exposure, described alignment mark cover layer is removed, to expose described alignment mark；
Step S4: described black matrix film is patterned technique, to form the figure of black matrix；
Wherein, the exposure wavelength of described alignment mark cover layer is different from the exposure wavelength of described black matrix film.
Preferably, described alignment mark cover layer uses near-infrared light-sensitive material.
Preferably, described near-infrared light-sensitive material includes the polymer containing adjacent nitrobenzyl, containing adjacent nitrobenzyl
Monomer, 4-bromo-umbelliferone polymer or the monomer of the bromo-umbelliferone of 4-.
Preferably, the thickness of described alignment mark cover layer is 3-5 times of described black matrix film thickness.
Preferably, the thickness of described black matrix film is 0.9-1.2um, and the thickness of described alignment mark cover layer is 2.7-
6um。
Preferably, use near infrared light that described alignment mark cover layer is exposed, use UV light to described black matrix
Film is exposed.
Preferably, to described alignment mark cover layer exposure complete, and described black matrix film is patterned technique it
Before also include: described substrate is carried out, with remove described alignment mark region residual described alignment mark cover layer, make
Described alignment mark comes out；
Described substrate is dried.
Preferably, described described black matrix film be patterned technique include:
Described alignment mark is identified and positions；
The position being used for forming the mask plate of the figure of described black matrix is adjusted according to described alignment mark；
Make exposure light pass through described mask plate described black matrix film is exposed.
Preferably, described alignment mark cover layer uses mask plate technique or prints technique formation.
Preferably, formed before black matrix over the substrate and also include: formed over the substrate grid, active layer,
Source-drain electrode and pixel electrode；
Described alignment mark uses the material identical with described grid or described source-drain electrode, and concurrently forms.
Preferably, described alignment mark is formed at the region, edge of described substrate, the shape bag of described alignment mark
Include " ten " font, circle, square or bar shaped.
The present invention also provides for a kind of array base palte, and described array base palte uses the preparation method of above-mentioned array base palte to prepare
Form.
The present invention also provides for a kind of display device, including above-mentioned array base palte.
Beneficial effects of the present invention: the preparation method of array base palte provided by the present invention, by the shape in corresponding substrate
Become to have the region beyond the region of alignment mark and alignment mark to form alignment mark cover layer and black matrix film respectively, and first will
Alignment mark cover layer is removed by exposure, then uses patterning processes to form the figure of black matrix, due to alignment mark cover layer
It is different with the exposure wavelength of black matrix film, so the two does not results in interference and impact each other when exposure such that it is able to
Avoid the black matrix film of higher optical density (optical density generally >=4.0) in exposure process to the identification of alignment mark, crawl and
The interference that location is caused, enables black matrix film when exposure by alignment mark exactitude position, and then not only increases black square
The exposure accuracy of battle array, and improve exposure quality and the performance of array base palte.
Display device provided by the present invention, by the array base palte using above-mentioned preparation method to be prepared from, improves
The preparation quality of this display device, thus improve display quality and the performance of this display device.
Accompanying drawing explanation
Fig. 1 is to form alignment mark cover layer and the schematic diagram of black matrix film in the embodiment of the present invention 1 on substrate；
Fig. 2 be array base palte preparation method on substrate, form the sectional view of alignment mark cover layer and top view；
Fig. 3 be array base palte preparation method on substrate, form the sectional view of black matrix film and top view；
Fig. 4 is the sectional view and top view in the preparation method of array base palte being exposed alignment mark cover layer；
Fig. 5 be array base palte preparation method in alignment mark cover layer is exposed after expose the section view of alignment mark
Figure and top view；
Fig. 6 is the sectional view and top view in the preparation method of array base palte being exposed black matrix film；
Fig. 7 be array base palte preparation method in black matrix film is exposed after form the sectional view of figure of black matrix
And top view.
Description of reference numerals therein:
1. substrate；2. alignment mark；3. alignment mark cover layer；4. black matrix film；5. black matrix mask plate；6. black matrix
Figure；7. functional film layer.
Detailed description of the invention
For making those skilled in the art be more fully understood that technical scheme, below in conjunction with the accompanying drawings and be embodied as
A kind of array base palte provided by the present invention and preparation method thereof and display device are described in further detail by mode.
Embodiment 1:
The present embodiment provides the preparation method of a kind of array base palte, as shown in Fig. 1-Fig. 7, including: step S1: use composition
Technique forms alignment mark cover layer 3 in the region being formed with alignment mark 2 of corresponding substrate 1.Step S2: the most right
Region beyond the labelling 2 of position forms black matrix film 4.Step S3: alignment mark cover layer 3 is removed, to expose by exposure
Alignment mark 2.Step S4: black matrix film 4 is patterned technique, to form the figure 6 of black matrix.Wherein, alignment mark covers
The exposure wavelength of cap rock 3 is different from the exposure wavelength of black matrix film 4.
This preparation method is by the region beyond the region being formed with alignment mark 2 and alignment mark 2 of corresponding substrate 1
Form alignment mark cover layer 3 and black matrix film 4 respectively, and first alignment mark cover layer 3 is removed by exposure, then use structure
Figure technique forms the figure 6 of black matrix, owing to alignment mark cover layer 3 is different with the exposure wavelength of black matrix film 4, so the two
Interference and impact is not resulted in each other such that it is able to avoid higher optical density (optical density is generally >=4.0) when exposure
Black matrix film 4 in exposure process to the identification of alignment mark 2, capture and position the interference caused, make black matrix film 4 in exposure
Time can pass through alignment mark 2 exactitude position, and then not only increase the exposure accuracy of black matrix, and improve array base palte
Exposure quality and performance.
It should be noted that the patterning processes forming alignment mark cover layer 3 is mask plate technique, including exposed and developed
Technique；Or, form the patterning processes of alignment mark cover layer 3 for printing technique.The wherein patterning processes bag to black matrix film 4
Include the exposed and developed technique to black matrix film 4.
In the present embodiment, alignment mark cover layer 3 uses near-infrared light-sensitive material.Owing to exposure machine being used for near-infrared
In the range of the exposure wavelength that light-sensitive material carries out decomposing is generally focused on 740-750nm, and for black matrix material in exposure machine
The exposure wavelength that material carries out decomposing is generally focused on 350-450nm, so alignment mark cover layer 3 and black matrix film 4 are in exposure
Time each other do not result in interference and impact.Near-infrared light-sensitive material can be by coating processes and printing technique film forming, so
Can realize its photolysis or degraded by overexposure, prepare and to process technique simple.
Wherein, near-infrared light-sensitive material includes the polymer containing adjacent nitrobenzyl, containing the adjacent monomer of nitrobenzyl, 4-
Bromo-umbelliferone polymer or the monomer of the bromo-umbelliferone of 4-.Certainly, near-infrared light-sensitive material can also be it
His material.
It should be noted that alignment mark cover layer 3 can also use other materials, if exposure wavelength and black matrix film
The exposure wavelength difference of 4.
In the present embodiment, the thickness of alignment mark cover layer 3 is 3-5 times of black matrix film 4 thickness.It is arranged such, right
In the film forming procedure of position labelling cover layer 3 and black matrix film 4, it is possible to prevent black matrix film 4 from being covered by alignment mark cover layer 3,
Thus avoid in the follow-up exposure process to two film layers, the exposure of alignment mark cover layer 3 is caused and blocks shadow by black matrix film 4
Ring.
In the present embodiment, the thickness of black matrix film 4 is 0.9-1.2um, and the thickness of alignment mark cover layer 3 is 2.7-6um.
Wherein, the thickness of black matrix film 4 is the film forming thickness of its routine, during preparation, first uses mask plate technique or prints technique formation
Alignment mark cover layer 3 (as shown in Figure 2), is then coated with forming black matrix film 4 (as shown in Figure 3), alignment mark cover layer 3
THICKNESS CONTROL is at 3-5 times of black matrix film 4 thickness.It addition, alignment mark cover layer 3 is in the length and width in corresponding alignment mark 2 region
Dimension control controls at micron order at grade, the thickness and precision of alignment mark cover layer 3.
In the present embodiment, step S1: use patterning processes to be formed in the region being formed with alignment mark 2 of corresponding substrate 1
Alignment mark cover layer 3 includes: first, and alignment mark cover layer 3 is by coating or printing-filming；Alignment mark cover layer 3 becomes
When film is complete, alignment mark cover layer 3 is dried.During it addition, black matrix film 4 film forming is complete in step s 2, to black square
Battle array film 4 is dried.The drying condition of above-mentioned drying is about 90 DEG C, dries about 90 seconds.First to the register guide after film forming
Note cover layer 3 is dried, and alignment mark cover layer 3 can be made substantially to shape, prevent from covering in the alignment mark of near liquid state
Cap rock 3 is other regional diffusions on substrate 1.Afterwards the black matrix film 4 after film forming is dried, in order to follow-up alignment mark is covered
Cap rock 3 and black matrix film 4 are exposed.
It should be noted that can also dry again after alignment mark cover layer 3 and black matrix film 4 all film forming
Dry.
In the present embodiment, in step S3 after black matrix film forming, first alignment mark cover layer 3 is exposed (such as Fig. 4 institute
Show).Particularly as follows: use near infrared light that alignment mark cover layer 3 is exposed, in exposure machine, it is pre-designed a near-infrared
Light lamp tube, controlling fluorescent tube distance substrate 1 surface distance is 2mm, and illumination wavelength scope concentrates on 740-750nm, and light exposure is
20mW/cm2, time of exposure is 30 minutes；The quick material membrane of near-infrared carries out photolysis or degraded under the irradiation of near infrared light, absolutely
Major part is removed.Also included before alignment mark cover layer 3 being exposed complete, and black matrix film 4 is patterned technique:
Substrate 1 is carried out, to remove the alignment mark cover layer 3 of alignment mark 2 region residual, makes alignment mark 2 come out；
Then substrate 1 is dried.In this step, removed the residue of the photosensitive material membrane of near-infrared by cleaning, and dry,
Thus expose the alignment mark 2 (as shown in Figure 5) being entirely covered.Then step S4 is performed: black matrix film 4 is patterned work
Skill.This patterning processes includes the follow-up exposed and developed technique to black matrix film 4.Use UV light that black matrix film 4 is exposed.
Specifically include: alignment mark 2 is identified and positions, in exposure machine, utilize the e light (ripple in 500-600nm wave-length coverage
Long 546nm) and d light (wavelength 578nm) alignment mark 2 is positioned and identifies, adjust aligning accuracy；According to alignment mark
The position of the 2 black matrix mask plates 5 adjusting the figure for forming black matrix, i.e. carries out space and property to black matrix mask plate 5
Shape adjusts；Then make exposure light pass through black matrix mask plate 5 black matrix film 4 is exposed, in making exposure machine, concentrate on UV
The i light (wavelength 365nm) in light district, h light (wavelength 405nm), g light (wavelength 436nm) irradiate through black matrix mask plate 5
Black matrix film 4 (as shown in Figure 6), the corresponding photochemical reaction of inducing catalysis, form the figure 6 of specific black matrix (such as Fig. 7 institute
Show).
The preparation process of above-mentioned black matrix, it can be ensured that after exposing alignment mark cover layer 3, alignment mark 2 can
Come out, in order to follow-up carry out black matrix mask plate 5 para-position time black matrix film 4 is exposed such that it is able to avoid higher
The black matrix film 4 of optical density (optical density generally >=4.0) in exposure process to the identification of alignment mark 2, capture and location is made
The interference become, enables black matrix film 4 when exposure by alignment mark 2 exactitude position, and then not only increases black matrix
Exposure accuracy, and improve exposure quality and the performance of array base palte.
In the present embodiment, also include before forming black matrix on substrate 1: form grid, active layer, source on substrate 1
Drain electrode and pixel electrode；Alignment mark 2 uses the material identical with grid or source-drain electrode, and concurrently forms.It should be noted that
Generally alignment mark 2 uses light-proof material, and concurrently forms with first the film layer formed on substrate 1.Such as alignment mark 2
Material identical with grid employing, and concurrently form.Alignment mark 2 is passed through when so can make to be subsequently formed on substrate 1 each film layer
Carry out the figure para-position of each film layer follow-up.I.e. black matrix is formed on array base palte (i.e. BOA, BM on Array), array base
On plate before forming black matrix, it is initially formed each functional film layer 7 conventional arrangement of on array base palte.BOA can solve the problem that array
The unmatched problem of black matrix shading and array base palte light leak region that substrate and color membrane substrates dislocation cause, promotes pixel openings
Rate and panel transmitance, be particularly useful for curved-surface display.
In the present embodiment, alignment mark 2 is formed at the region, edge of substrate 1, and the shape of alignment mark 2 includes " ten "
Font, circle, square or bar shaped.Certainly, alignment mark 2 can also be other shape.
Preparation method based on above-mentioned array base palte, the present embodiment also provides for the above-mentioned preparation method of a kind of employing and is prepared from
Array base palte.
The beneficial effect of embodiment 1: the preparation method of the array base palte provided in embodiment 1, by corresponding substrate
The region being formed with alignment mark and alignment mark beyond region form alignment mark cover layer and black matrix film respectively, and
First alignment mark cover layer is removed by exposure, then use patterning processes to form the figure of black matrix, owing to alignment mark covers
Cap rock is different with the exposure wavelength of black matrix film, so the two does not results in interference and impact each other when exposure, thus
It can be avoided that higher optical density the black matrix film of (optical density is generally >=4.0) in exposure process to the identification of alignment mark, grab
Take and position the interference caused, enable black matrix film when exposure by alignment mark exactitude position, and then not only increase
The exposure accuracy of black matrix, and improve exposure quality and the performance of array base palte.
Embodiment 2:
The present embodiment provides a kind of display device, including the array base palte in embodiment 1.
By using the array base palte in embodiment 1, it is possible to increase the preparation quality of this display device, thus improve this
The display quality of display device and performance.
Display device provided by the present invention can be that liquid crystal panel, LCD TV, display, mobile phone, navigator etc. are appointed
What has product or the parts of display function.
It is understood that the principle that is intended to be merely illustrative of the present of embodiment of above and the exemplary enforcement that uses
Mode, but the invention is not limited in this.For those skilled in the art, in the essence without departing from the present invention
In the case of god and essence, can make various modification and improvement, these modification and improvement are also considered as protection scope of the present invention.
Claims (13)
1. the preparation method of an array base palte, it is characterised in that including:
Step S1: use patterning processes to form alignment mark cover layer in the region being formed with alignment mark of corresponding substrate；
Step S2: the region beyond the most described alignment mark forms black matrix film；
Step S3: by exposure, described alignment mark cover layer is removed, to expose described alignment mark；
Step S4: described black matrix film is patterned technique, to form the figure of black matrix；
Wherein, the exposure wavelength of described alignment mark cover layer is different from the exposure wavelength of described black matrix film.
The preparation method of array base palte the most according to claim 1, it is characterised in that described alignment mark cover layer uses
Near-infrared light-sensitive material.
The preparation method of array base palte the most according to claim 2, it is characterised in that described near-infrared light-sensitive material includes
Contain the polymer of adjacent nitrobenzyl, containing the adjacent monomer of nitrobenzyl, 4-bromo-umbelliferone polymer or the bromo-7-of 4-
The monomer of Hydroxycoumarin.
The preparation method of array base palte the most according to claim 1, it is characterised in that the thickness of described alignment mark cover layer
Degree is 3-5 times of described black matrix film thickness.
The preparation method of array base palte the most according to claim 1, it is characterised in that the thickness of described black matrix film is
0.9-1.2um, the thickness of described alignment mark cover layer is 2.7-6um.
The preparation method of array base palte the most according to claim 2, it is characterised in that use near infrared light to described para-position
Labelling cover layer is exposed, and uses UV light to be exposed described black matrix film.
The preparation method of array base palte the most according to claim 1, it is characterised in that to described alignment mark cover layer
Expose complete, and also include before described black matrix film is patterned technique: described substrate is carried out, described to remove
The described alignment mark cover layer of alignment mark region residual, makes described alignment mark come out；
Described substrate is dried.
The preparation method of array base palte the most according to claim 1, it is characterised in that described described black matrix film is carried out
Patterning processes includes:
Described alignment mark is identified and positions；
The position being used for forming the mask plate of the figure of described black matrix is adjusted according to described alignment mark；
Make exposure light pass through described mask plate described black matrix film is exposed.
The preparation method of array base palte the most according to claim 1, it is characterised in that described alignment mark cover layer uses
Mask plate technique or printing technique are formed.
The preparation method of array base palte the most according to claim 1, it is characterised in that form black square over the substrate
Also included before Zhen: form grid, active layer, source-drain electrode and pixel electrode over the substrate；
Described alignment mark uses the material identical with described grid or described source-drain electrode, and concurrently forms.
11. according to the preparation method of the array base palte described in claim 1-10 any one, it is characterised in that described register guide
Note is formed at the region, edge of described substrate, and the shape of described alignment mark includes " ten " font, circle, square or bar
Shape.
12. 1 kinds of array base paltes, it is characterised in that described array base palte uses the battle array as described in claim 1-11 any one
The preparation method of row substrate is prepared from.
13. 1 kinds of display devices, it is characterised in that include the array base palte described in claim 12.
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| CN110133928A (en) * | 2019-05-15 | 2019-08-16 | 京东方科技集团股份有限公司 | Array substrate and its manufacturing method, display panel |
| CN110133928B (en) * | 2019-05-15 | 2022-01-04 | 京东方科技集团股份有限公司 | Array substrate, manufacturing method thereof and display panel |
| CN110211502A (en) * | 2019-06-28 | 2019-09-06 | 云谷（固安）科技有限公司 | The production method of array substrate and preparation method thereof and display panel |
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