CN106054482B - A kind of array substrate and preparation method thereof and display device - Google Patents
A kind of array substrate and preparation method thereof and display device Download PDFInfo
- Publication number
- CN106054482B CN106054482B CN201610682390.4A CN201610682390A CN106054482B CN 106054482 B CN106054482 B CN 106054482B CN 201610682390 A CN201610682390 A CN 201610682390A CN 106054482 B CN106054482 B CN 106054482B
- Authority
- CN
- China
- Prior art keywords
- alignment mark
- black matrix
- array substrate
- preparation
- matrix film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
- G02F1/136295—Materials; Compositions; Manufacture processes
Abstract
The present invention provides a kind of array substrate and preparation method thereof and display device.The preparation method of the array substrate includes: to have the region of alignment mark to form alignment mark coating in the formation of corresponding substrate using patterning processes；The region other than alignment mark forms black matrix film on substrate；Alignment mark coating is removed by exposing, to expose alignment mark；Technique is patterned to black matrix film, to form the figure of black matrix；Wherein, the exposure wavelength of alignment mark coating is different from the exposure wavelength of black matrix film.The black matrix film that the preparation method of the array substrate can be avoided higher optical density (optical density is usually >=4.0) is interfered caused by the identification of alignment mark, crawl and positioning in exposure process, enable black matrix film in exposure by alignment mark exactitude position, to not only increase the exposure accuracy of black matrix, and improve the exposure quality and performance of array substrate.
Description
Technical field
The present invention relates to field of display technology, and in particular, to a kind of array substrate and preparation method thereof and display device.
Background technique
In the field thin film transistor liquid crystal display TFT-LCD, generally pass through sealant (Sealant) for color film CF substrate
It is combined together with array Array substrate.It is usually black in one layer of color film CF substrate side preparation in traditional liquid crystal display panel
Matrix (BM, Black Matrix) blocks the gap between each sub-pixels for separating each sub-pixels, prevent colour mixture and
Light leakage；And the technology of color film CF substrate or black matrix BM preparation on array Array substrate is called COA (CF On
Array, CF substrate are attached at Array substrate) or BOA (BM On Array, BM are attached at Array substrate), COA and BOA can
To solve the problems, such as that BM lightproof area caused by array substrate, the dislocation of color membrane substrates pairing and Array light-leaking area are unmatched,
Pixel aperture ratio and panel transmitance are promoted, is particularly useful for flexible displays.
But due to black matrix BM optical density OD with higher, after being coated with BM photoresist glue directly on Array substrate, exposure
The exposure light that equipment is often used can not penetrate BM layers, so that black matrix mask plate BM Mask can be interfered right on Array substrate
Identification, crawl and the positioning of alignment mark Mark, so that black matrix mask plate BM Mask can not be carried out accurately with Array substrate
Contraposition causes exposure machine that can only rely on the physical mechanical pair of equipment itself and Array substrate and black matrix mask plate BM Mask
Position, and can not be corrected and be adjusted in advance referring to above-mentioned alignment mark Mark, the exposure accuracy of BM is greatly reduced, battle array is caused
Black matrix figure BM Pattern total spacing TP (Total Pitch) error on column substrate is big, i.e. BM Pattern exposure
Actual value and design value deviation CD Bias are larger, eventually lead to array substrate entirety film surface quality and dysfunction.
Summary of the invention
The present invention is directed to the above-mentioned technical problems in the prior art, provide a kind of array substrate and preparation method thereof and
Display device.The black matrix film that the preparation method of the array substrate can be avoided higher optical density (optical density is usually >=4.0) exists
It is interfered caused by the identification of alignment mark, crawl and positioning in exposure process, enables black matrix film in exposure by right
Position label exactitude position, to not only increase the exposure accuracy of black matrix, and improve array substrate exposure quality and
Performance.
The present invention provides a kind of preparation method of array substrate, comprising: step S1: using patterning processes in corresponding substrate
The region for being formed with alignment mark forms alignment mark coating；
Step S2: the region other than the alignment mark forms black matrix film over the substrate；
Step S3: the alignment mark coating is removed by exposure, to expose the alignment mark；
Step S4: technique is patterned to the black matrix film, to form the figure of black matrix；
Wherein, the exposure wavelength of the alignment mark coating is different from the exposure wavelength of the black matrix film.
Preferably, the alignment mark coating uses near-infrared light-sensitive material.
Preferably, the near-infrared light-sensitive material includes the polymer containing adjacent nitro benzyl, containing adjacent nitro benzyl
The monomer of the bromo- umbelliferone polymer of monomer, 4- or the bromo- umbelliferone of 4-.
Preferably, 3-5 times with a thickness of the black matrix film thickness of the alignment mark coating.
Preferably, the black matrix film with a thickness of 0.9-1.2um, the alignment mark coating with a thickness of 2.7-
6um。
Preferably, the alignment mark coating is exposed using near infrared light, using UV light to the black matrix
Film is exposed.
Preferably, to the alignment mark coating exposure finish, and to the black matrix film be patterned technique it
Before further include: the substrate is cleaned, to remove the remaining alignment mark coating in the alignment mark region, is made
The alignment mark is exposed；
The substrate is dried.
Preferably, described technique is patterned to the black matrix film to include:
The alignment mark is identified and positioned；
The position of the mask plate of the figure of the black matrix is used to form according to alignment mark adjustment；
It is exposed exposure light to the black matrix film through the mask plate.
Preferably, the alignment mark coating is formed using mask plate technique or printing technology.
Preferably, over the substrate formed black matrix before further include: over the substrate formed grid, active layer,
Source-drain electrode and pixel electrode；
The alignment mark uses material identical with the grid or the source-drain electrode, and is formed simultaneously.
Preferably, the alignment mark is formed in the edge region of the substrate, the shape packet of the alignment mark
Include " ten " font, circle, rectangular or bar shaped.
The present invention also provides a kind of array substrate, the array substrate is prepared using the preparation method of above-mentioned array substrate
It forms.
The present invention also provides a kind of display devices, including above-mentioned array substrate.
Beneficial effects of the present invention: the preparation method of array substrate provided by the present invention passes through the shape in corresponding substrate
It is respectively formed alignment mark coating and black matrix film at the region other than the region and alignment mark for having alignment mark, and first will
Alignment mark coating is by exposure removal, then the figure for using patterning processes to form black matrix, due to alignment mark coating
It is different with the exposure wavelength of black matrix film, so the two will not be interfered and be influenced between each other in exposure, so as to
Avoid the black matrix film of higher optical density (optical density usually >=4.0) in exposure process to the identification of alignment mark, crawl and
It is interfered caused by positioning, enables black matrix film in exposure by alignment mark exactitude position, and then not only increase black square
The exposure accuracy of battle array, and improve the exposure quality and performance of array substrate.
Display device provided by the present invention is improved by using the array substrate that above-mentioned preparation method is prepared
The preparation quality of the display device, to improve the display quality and performance of the display device.
Detailed description of the invention
Fig. 1 is the schematic diagram that alignment mark coating and black matrix film are formed on the substrate in the embodiment of the present invention 1；
Fig. 2 be array substrate preparation method in the cross-sectional view and top view of alignment mark coating is formed on the substrate；
Fig. 3 be array substrate preparation method in the cross-sectional view and top view of black matrix film is formed on the substrate；
Fig. 4 is the cross-sectional view and top view that are exposed to alignment mark coating in the preparation method of array substrate；
Fig. 5 be array substrate preparation method in alignment mark coating is exposed after expose alignment mark section view
Figure and top view；
Fig. 6 is the cross-sectional view and top view that are exposed to black matrix film in the preparation method of array substrate；
Fig. 7 be array substrate preparation method in black matrix film is exposed after formed black matrix figure cross-sectional view
And top view.
Description of symbols therein:
1. substrate；2. alignment mark；3. alignment mark coating；4. black matrix film；5. black matrix mask plate；6. black matrix
Figure；7. functional film layer.
Specific embodiment
To make those skilled in the art more fully understand technical solution of the present invention, with reference to the accompanying drawing and it is embodied
Mode is described in further detail a kind of array substrate provided by the present invention and preparation method thereof and display device.
Embodiment 1:
The present embodiment provides a kind of preparation methods of array substrate, as shown in Fig. 1-Fig. 7, comprising: step S1: using composition
Technique has the region of alignment mark 2 to form alignment mark coating 3 in the formation of corresponding substrate 1.Step S2: right on substrate 1
Region other than the label 2 of position forms black matrix film 4.Step S3: alignment mark coating 3 is removed by exposing, to expose
Alignment mark 2.Step S4: being patterned technique to black matrix film 4, to form the figure 6 of black matrix.Wherein, alignment mark covers
The exposure wavelength of cap rock 3 is different from the exposure wavelength of black matrix film 4.
The preparation method by the formation in corresponding substrate 1 have alignment mark 2 region and alignment mark 2 other than region
It is respectively formed alignment mark coating 3 and black matrix film 4, and first by alignment mark coating 3 by exposure removal, then uses structure
Figure technique forms the figure 6 of black matrix, since alignment mark coating 3 is different with the exposure wavelength of black matrix film 4, so the two
It will not interfere and influence between each other in exposure, so as to avoid higher optical density (optical density is usually >=4.0)
Black matrix film 4 is interfered caused by the identification, crawl and positioning of alignment mark 2 in exposure process, is exposing black matrix film 4
When can be by 2 exactitude position of alignment mark, and then not only increase the exposure accuracy of black matrix, and improve array substrate
Exposure quality and performance.
It should be noted that the patterning processes for forming alignment mark coating 3 are mask plate technique, including exposure and imaging
Technique；Alternatively, the patterning processes for forming alignment mark coating 3 are printing technology.Wherein to the patterning processes packet of black matrix film 4
Include the exposure and imaging technique to black matrix film 4.
In the present embodiment, alignment mark coating 3 uses near-infrared light-sensitive material.Due to being used in exposure machine to near-infrared
The exposure wavelength that light-sensitive material is decomposed is generally focused within the scope of 740-750nm, and for black matrix material in exposure machine
Expect that the exposure wavelength decomposed is generally focused on 350-450nm, so alignment mark coating 3 and black matrix film 4 are exposing
When will not interfere and influence between each other.Near-infrared light-sensitive material can be formed a film by coating processes and printing technology, so
It can be realized by overexposure to its photodegradation or degradation, preparation and treatment process are simple.
Wherein, near-infrared light-sensitive material includes the polymer containing adjacent nitro benzyl, the monomer containing adjacent nitro benzyl, 4-
The monomer of bromo- umbelliferone polymer or the bromo- umbelliferone of 4-.Certainly, near-infrared light-sensitive material is also possible to it
His material.
It should be noted that alignment mark coating 3 can also use other materials, as long as exposure wavelength and black matrix film
4 exposure wavelength is different.
In the present embodiment, 3-5 times with a thickness of 4 thickness of black matrix film of alignment mark coating 3.So set, right
In the film forming procedure of position label coating 3 and black matrix film 4, it can prevent black matrix film 4 from covering alignment mark coating 3,
To avoid in the subsequent exposure process to two film layers, black matrix film 4 causes to block shadow to the exposure of alignment mark coating 3
It rings.
In the present embodiment, black matrix film 4 with a thickness of 0.9-1.2um, alignment mark coating 3 with a thickness of 2.7-6um.
Wherein, black matrix film 4 with a thickness of its conventional film forming thickness, when preparation, first formed using mask plate technique or printing technology
Alignment mark coating 3 (as shown in Figure 2) is then coated with to form black matrix film 4 (as shown in Figure 3), alignment mark coating 3
3-5 times in 4 thickness of black matrix film of thickness control.In addition, length and width of the alignment mark coating 3 in corresponding 2 region of alignment mark
Dimension control is in grade, and the thickness and precision control of alignment mark coating 3 is in the micron-scale.
In the present embodiment, step S1: the formation using patterning processes in corresponding substrate 1 has the region of alignment mark 2 to be formed
Alignment mark coating 3 includes: firstly, alignment mark coating 3 passes through coating or printing-filming；Alignment mark coating 3 at
When film finishes, alignment mark coating 3 is dried.In addition, when the film forming of black matrix film 4 finishes in step s 2, to black square
Battle array film 4 is dried.The drying condition of above-mentioned drying is 90 DEG C or so, is dried about 90 seconds.First to the register guide after film forming
Note coating 3 is dried, and alignment mark coating 3 can be made to shape substantially, prevents from covering in the alignment mark of near liquid state
Other regional diffusions on substrate 1 of cap rock 3.The black matrix film 4 after film forming is dried afterwards, alignment mark is covered so as to subsequent
Cap rock 3 and black matrix film 4 are exposed.
It should be noted that can also be dried again after alignment mark coating 3 and black matrix film 4 all form a film
It is dry.
In the present embodiment, in step S3 after black matrix film forming, first alignment mark coating 3 is exposed (such as Fig. 4 institute
Show).Specifically: alignment mark coating 3 is exposed using near infrared light, in exposure machine, is pre-designed a near-infrared
Light lamp tube, control fluorescent tube are 2mm apart from 1 surface distance of substrate, and illumination wavelength range concentrates on 740-750nm, and light exposure is
20mW/cm2, time for exposure are 30 minutes；The quick material membrane of near-infrared carries out photodegradation or degradation under the irradiation of near infrared light, absolutely
Major part is removed.It is finished to the exposure of alignment mark coating 3, and black matrix film 4 is patterned before technique further include:
Substrate 1 is cleaned, to remove the remaining alignment mark coating 3 in 2 region of alignment mark, alignment mark 2 is exposed；
Then substrate 1 is dried.In the step, the residue of the photosensitive material membrane of near-infrared is removed by cleaning process, and is dried,
To expose the alignment mark 2 (as shown in Figure 5) being entirely covered.Then it executes step S4: work is patterned to black matrix film 4
Skill.The patterning processes include the subsequent exposure and imaging technique to black matrix film 4.Black matrix film 4 is exposed using UV light.
It specifically includes: alignment mark 2 is identified and positioned, in exposure machine, utilize the e light (wave in 500-600nm wave-length coverage
Long 546nm) and d light (wavelength 578nm) alignment mark 2 is positioned and is identified, adjust aligning accuracy；According to alignment mark
2 adjustment are used to form the position of the black matrix mask plate 5 of the figure of black matrix, i.e., carry out space and property to black matrix mask plate 5
Shape adjustment；It is exposed exposure light to black matrix film 4 through black matrix mask plate 5, makes to concentrate on UV in exposure machine
I light (wavelength 365nm), h light (wavelength 405nm), the g light (wavelength 436nm) in light area are irradiated through black matrix mask plate 5
Black matrix film 4 (as shown in Figure 6), the corresponding photochemical reaction of inducing catalysis form the figure 6 of specific black matrix (such as Fig. 7 institute
Show).
The preparation process of above-mentioned black matrix, it can be ensured that after exposing to alignment mark coating 3, alignment mark 2 can
Be exposed, so as to it is subsequent black matrix film 4 is exposed when carry out black matrix mask plate 5 align, it is higher so as to avoid
The black matrix film 4 of optical density (optical density is usually >=4.0) makes the identification, crawl and positioning of alignment mark 2 in exposure process
At interference, so that black matrix film 4, by 2 exactitude position of alignment mark, and then is not only increased black matrix in exposure
Exposure accuracy, and improve the exposure quality and performance of array substrate.
It in the present embodiment, is formed before black matrix on substrate 1 further include: grid, active layer, source are formed on substrate 1
Drain electrode and pixel electrode；Alignment mark 2 uses material identical with grid or source-drain electrode, and is formed simultaneously.It should be noted that
Usual alignment mark 2 uses light-proof material, and is formed simultaneously with first film layer being formed on substrate 1.Such as alignment mark 2
Identical material is used with grid, and is formed simultaneously.By alignment mark 2 when can so make to be subsequently formed each film layer on substrate 1
Carry out the figure contraposition of subsequent each film layer.I.e. black matrix is formed in array substrate (i.e. BOA, BM on Array), array base
On plate before forming black matrix, it is initially formed conventional arrangement of each functional film layer 7 in array substrate.BOA is able to solve array
Black matrix shading and the unmatched problem of array substrate light-leaking area caused by substrate and color membrane substrates misplace, promote pixel openings
Rate and panel transmitance, are particularly useful for curved-surface display.
In the present embodiment, alignment mark 2 is formed in the edge region of substrate 1, and the shape of alignment mark 2 includes " ten "
Font, circle, rectangular or bar shaped.Certainly, alignment mark 2 is also possible to other shapes.
Based on the preparation method of above-mentioned array substrate, the present embodiment also provides a kind of above-mentioned preparation method of use and is prepared
Array substrate.
Embodiment 1 the utility model has the advantages that the preparation method of array substrate provided in embodiment 1, by corresponding substrate
Formation there is the region of alignment mark and the region other than alignment mark to be respectively formed alignment mark coating and black matrix film, and
First by alignment mark coating by exposure removal, then using the figure of patterning processes formation black matrix, since alignment mark covers
Cap rock is different with the exposure wavelength of black matrix film, so the two will not be interfered and be influenced between each other in exposure, thus
Can be avoided the black matrix film of higher optical density (optical density usually >=4.0) in exposure process to the identification of alignment mark, grab
Interference caused by taking and positioning enables black matrix film in exposure by alignment mark exactitude position, and then not only increases
The exposure accuracy of black matrix, and improve the exposure quality and performance of array substrate.
Embodiment 2:
The present embodiment provides a kind of display devices, including the array substrate in embodiment 1.
By using the array substrate in embodiment 1, the preparation quality of the display device can be improved, to improve this
The display quality and performance of display device.
Display device provided by the present invention can appoint for liquid crystal display panel, LCD TV, display, mobile phone, navigator etc.
What products or components having a display function.
It is understood that the principle that embodiment of above is intended to be merely illustrative of the present and the exemplary implementation that uses
Mode, however the present invention is not limited thereto.For those skilled in the art, essence of the invention is not being departed from
In the case where mind and essence, various changes and modifications can be made therein, these variations and modifications are also considered as protection scope of the present invention.
Claims (13)
1. a kind of preparation method of array substrate, comprising:
Step S1: the region of alignment mark forms alignment mark coating in the formation of corresponding substrate using patterning processes；
Step S2: the region other than the alignment mark forms black matrix film over the substrate；It is characterized by further comprising:
Step S3: the alignment mark coating is removed by exposure, to expose the alignment mark；
Step S4: technique is patterned to the black matrix film, to form the figure of black matrix；
Wherein, the exposure wavelength of the alignment mark coating is different from the exposure wavelength of the black matrix film.
2. the preparation method of array substrate according to claim 1, which is characterized in that the alignment mark coating uses
Near-infrared light-sensitive material.
3. the preparation method of array substrate according to claim 2, which is characterized in that the near-infrared light-sensitive material includes
The bromo- umbelliferone polymer of polymer containing adjacent nitro benzyl, the monomer containing adjacent nitro benzyl, 4- or the bromo- 7- of 4-
The monomer of Hydroxycoumarin.
4. the preparation method of array substrate according to claim 1, which is characterized in that the thickness of the alignment mark coating
Degree is 3-5 times of the black matrix film thickness.
5. the preparation method of array substrate according to claim 1, which is characterized in that the black matrix film with a thickness of
0.9-1.2um, the alignment mark coating with a thickness of 2.7-6um.
6. the preparation method of array substrate according to claim 2, which is characterized in that using near infrared light to the contraposition
Label coating is exposed, and is exposed using UV light to the black matrix film.
7. the preparation method of array substrate according to claim 1, which is characterized in that the alignment mark coating
Exposure finishes, and is patterned before technique to the black matrix film further include: cleans to the substrate, described in removal
The remaining alignment mark coating in alignment mark region, is exposed the alignment mark；
The substrate is dried.
8. the preparation method of array substrate according to claim 1, which is characterized in that described to be carried out to the black matrix film
Patterning processes include:
The alignment mark is identified and positioned；
The position of the mask plate of the figure of the black matrix is used to form according to alignment mark adjustment；
It is exposed exposure light to the black matrix film through the mask plate.
9. the preparation method of array substrate according to claim 1, which is characterized in that the alignment mark coating uses
Mask plate technique or printing technology are formed.
10. the preparation method of array substrate according to claim 1, which is characterized in that form black square over the substrate
Before battle array further include: form grid, active layer, source-drain electrode and pixel electrode over the substrate；
The alignment mark uses material identical with the grid or the source-drain electrode, and is formed simultaneously.
11. the preparation method of array substrate described in -10 any one according to claim 1, which is characterized in that the register guide
Note is formed in the edge region of the substrate, and the shape of the alignment mark includes " ten " font, circle, rectangular or item
Shape.
12. a kind of array substrate, which is characterized in that the array substrate is using the battle array as described in claim 1-11 any one
The preparation method of column substrate is prepared.
13. a kind of display device, which is characterized in that including the array substrate described in claim 12.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610682390.4A CN106054482B (en) | 2016-08-17 | 2016-08-17 | A kind of array substrate and preparation method thereof and display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610682390.4A CN106054482B (en) | 2016-08-17 | 2016-08-17 | A kind of array substrate and preparation method thereof and display device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106054482A CN106054482A (en) | 2016-10-26 |
| CN106054482B true CN106054482B (en) | 2019-04-26 |
Family
ID=57195026
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610682390.4A Active CN106054482B (en) | 2016-08-17 | 2016-08-17 | A kind of array substrate and preparation method thereof and display device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106054482B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107966865A (en) * | 2017-12-18 | 2018-04-27 | 深圳市华星光电半导体显示技术有限公司 | Production method, array base palte and the display panel of array base palte |
| CN110133928B (en) * | 2019-05-15 | 2022-01-04 | 京东方科技集团股份有限公司 | Array substrate, manufacturing method thereof and display panel |
| CN110211502A (en) * | 2019-06-28 | 2019-09-06 | 云谷（固安）科技有限公司 | The production method of array substrate and preparation method thereof and display panel |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3959032B2 (en) * | 2003-01-08 | 2007-08-15 | 松下電器産業株式会社 | Method for manufacturing solid-state imaging device |
| JP2005085690A (en) * | 2003-09-10 | 2005-03-31 | Pioneer Electronic Corp | Method for manufacturing plasma display panel, and alignment mark detecting device |
| CN102800566B (en) * | 2012-07-16 | 2015-01-28 | 中国电子科技集团公司第五十五研究所 | Method for protecting alignment mark through contact area lead wire process in semiconductor device |
| CN104808377B (en) * | 2015-05-13 | 2017-07-11 | 合肥鑫晟光电科技有限公司 | The method for showing alignment mark position, array base palte and preparation method thereof |
| CN106200258B (en) * | 2016-08-31 | 2019-11-22 | 深圳市华星光电技术有限公司 | A kind of manufacturing method of mask plate, method and circuit board that it is exposed |
-
2016
- 2016-08-17 CN CN201610682390.4A patent/CN106054482B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN106054482A (en) | 2016-10-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100687883B1 (en) | Photomask for double exposure and double exposure method using thereof | |
| US9134615B2 (en) | Exposure method for glass substrate of liquid crystal display | |
| CN106054482B (en) | A kind of array substrate and preparation method thereof and display device | |
| KR100932995B1 (en) | Gray scale mask | |
| WO2019129109A1 (en) | Method for fabricating black matrix | |
| CN104281014B (en) | Mask plate, exposure equipment and preparation method of ultraviolet mask substrate | |
| WO2019184694A1 (en) | Substrate edge processing method and mask | |
| WO2014194634A1 (en) | Method for manufacturing display screen | |
| WO2013170608A1 (en) | Mask plate and method for manufacturing array substrate | |
| CN106547143B (en) | Production method, display base plate and the display device of display base plate | |
| US6576378B2 (en) | Photomask and exposure method for large scaled LCD device | |
| US20170212392A1 (en) | Alignment device and manufacturing method of alignment film and display substrate | |
| US10725371B2 (en) | Method of manufacturing a substrate of a display device and mask thereof | |
| JP6947925B2 (en) | Manufacturing method of TFT array substrate and manufacturing method of display device | |
| WO2021114365A1 (en) | Display panel and preparation method therefor | |
| US20150160563A1 (en) | Exposure method and exposure device | |
| CN104779145B (en) | Mask plate and preparation method thereof | |
| TWI398737B (en) | Method of mask alignment and exposing and mask assembly | |
| WO2015096395A1 (en) | Manufacturing method for array substrate, array substrate and display device | |
| TWI688988B (en) | Device substrate and manufacturing mehod thereof | |
| CN108873425B (en) | Liquid crystal display panel and manufacturing method thereof | |
| CN107807492A (en) | Utilize the exposure method of exposure mask | |
| CN110764376B (en) | Display panel and manufacturing method thereof | |
| US7186350B2 (en) | Method for removing color resist for exposure alignment | |
| KR20100076680A (en) | Method for fabricating phase shift mask |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |