CN107986229B - Opening device of micro-electro-mechanical device and preparation multiplexing method thereof - Google Patents
Opening device of micro-electro-mechanical device and preparation multiplexing method thereof Download PDFInfo
- Publication number
- CN107986229B CN107986229B CN201711258714.2A CN201711258714A CN107986229B CN 107986229 B CN107986229 B CN 107986229B CN 201711258714 A CN201711258714 A CN 201711258714A CN 107986229 B CN107986229 B CN 107986229B
- Authority
- CN
- China
- Prior art keywords
- layer
- silicon
- top plate
- fixed structure
- metal lead
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00087—Holes
Abstract
The invention discloses a perforating device of a micro-electromechanical device and a preparation multiplexing method thereof, which comprises a bottom layer process, a cap process and a metallization process, wherein the device is sealed in a mode of bonding the bottom layer and the cap, and then a signal is led out by patterning a metal layer; the device comprises a structural layer divided into a fixed structure and a movable structure, two glass layers distributed on the top and the bottom for providing airtight environment, a movable cavity for moving the movable structure, an isolation groove for electrically isolating the fixed structures, a metal lead and a bonding pad, wherein the upper surface of the top glass is used for leading out signals. Compared with the traditional process in which one signal wire is led out by using one lead hole, the invention leads out a plurality of signal wires by using one lead hole, reduces the number of lead holes required on a chip, and further reduces the area and the cost of the chip.
Description
Technical Field
The invention relates to a processing method of a micro-electromechanical device, in particular to a punching device of the micro-electromechanical device and a preparation multiplexing method thereof.
Background
With the development of micromechanical technology, more and more MEMS devices have been implemented in recent years for commercial use and even for military use. Among them, MEMS devices have enjoyed great success in automotive electronics, inertial navigation, and portable electronic devices.
Since MEMS processes are typically planar processes, MEMS devices typically use either non-closed structures + edge traces or closed structures + top/bottom traces for signal extraction considerations. Considering that MEMS devices such as inertial devices and pressure sensors require hermetic/vacuum packaging, the closed structure + top/bottom routing scheme can satisfy both signal extraction and wafer level packaging requirements.
Conventional processes use a single via to lead out a signal line, with the dimensions of each via, along with the bond pad and surface metallization, typically being on the order of hundreds of microns. This consumes a significant amount of wafer area for the lead holes for a gyroscope, which requires more signal electrodes, thereby substantially increasing the size and cost of the chip.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides an opening multiplexing method of a micro-electromechanical device.
The purpose of the invention is realized by the following technical scheme: the opening device of the micro-electromechanical device comprises a bottom layer and a cover cap layer connected with the bottom layer in a bonding mode; the bottom layer comprises a bottom plate and a structural layer connected with the bottom plate in a bonding mode, a first movable structure cavity is etched on the bottom plate, an isolation groove, a movable structure and a fixed structure are etched on the structural layer, the isolation groove is arranged in the fixed structure, and the fixed structure and the movable structure are connected together through a suspension structure; the cap layer comprises a top plate, the top plate is connected with the structural layer in a bonding mode, a lead through hole is etched in the front face of the top plate, a metal lead and a bonding pad used for leading out signals are further arranged in the front face of the top plate, a second movable structure cavity is etched in the back face of the top plate, and the second movable structure cavity and the first movable structure cavity form a movable structure cavity.
Preferably, the fixing structures comprise a first fixing structure, a second fixing structure, a third fixing structure and a fourth fixing structure; the metal leads comprise a first metal lead, a second metal lead, a third metal lead and a fourth metal lead; the first metal lead is connected with the first fixing structure, the second metal lead is connected with the second fixing structure, the third metal lead is connected with the third fixing structure, and the fourth metal lead is connected with the fourth fixing structure.
Preferably, the isolation groove is arranged among the first fixing structure, the second fixing structure, the third fixing structure and the fourth fixing structure.
An opening multiplexing method of a micro-electromechanical device comprises the following steps:
a. bottom layer process
(1) Etching a first movable structure cavity on the bottom plate;
(2) the bottom plate and the structural layer are sealed in a bonding mode;
(3) etching an isolation groove on the structural layer;
(4) backfilling the isolation groove by a deposition process, flattening the surface of the isolation groove, and removing redundant fillers;
(5) etching the structural layer into a movable structure and a fixed structure, wherein the movable structure and the fixed structure are connected together through a suspension structure;
b. capping process
(1) Etching a second movable structure cavity on the back of the top plate;
(2) etching a lead through hole on the front surface of the top plate;
(3) bonding the cap layer and the bottom layer together to form an airtight environment;
c. metallization process
(1) The isolation groove divides the fixed structure into a plurality of parts which are mutually and electrically isolated;
(2) and depositing a metal layer on the surface of the cap layer, then patterning the metal layer and finally forming the electrical connection, wherein the metal layer is patterned into a plurality of metal leads which are electrically isolated from each other.
Preferably, in the bottom layer process, the bottom plate is a glass layer, the structural layer is a silicon wafer, and the bottom plate and the structural layer are sealed in a silicon-glass bonding mode.
Preferably, in the capping process, the top plate is a glass layer, and the capping layer and the bottom layer are bonded together through silicon glass to form an airtight environment.
Preferably, in the bottom layer process, the bottom plate is a silicon wafer, the structural layer is a silicon wafer, and the bottom plate and the structural layer 10 are sealed in a silicon-silicon bonding manner; an insulating layer is arranged between the bottom plate and the structural layer, and the insulating layer is made of materials such as silicon dioxide, silicon nitride or glass.
Preferably, in the capping process, the top plate is a silicon wafer, the capping layer and the bottom layer are bonded together through silicon to form an airtight environment, an insulating layer is arranged between the top plate and the structural layer, and the insulating layer is made of materials such as silicon dioxide, silicon nitride or glass.
Preferably, in the capping process, the top plate is a silicon wafer, the capping layer and the bottom layer are bonded together through silicon to form an airtight environment, and the bottom layer is an SOI silicon wafer.
Preferably, in the underlayer process, the filler is an electrical insulator, such as silicon dioxide or the like.
The invention has the beneficial effects that:
1. compared with the traditional process that one lead hole is used for leading out one signal wire, the invention leads out a plurality of electrodes with close spatial positions through one lead hole, leads out a plurality of signal wires through one lead hole, reduces the number of the lead holes needed on the chip, thereby reducing the area and the cost of the chip, particularly for devices with more electrodes such as a gyroscope, the area occupied by the open hole can be reduced to 1/2 or even 1/4 through the multiplexing of the open hole, and the total area of the chip can be reduced to 1/4 orders of magnitude according to the difference of the proportion of the open hole area to the total area of the chip;
2. according to the invention, the bottom plate and the structural layer are bonded and sealed, the cap layer and the bottom layer are bonded and sealed, and the effective formation of an airtight environment is ensured by a silicon-glass bonding mode twice, so that the reliability of the sealing process of the micro-electromechanical device is high;
3. the top plate and the bottom plate can be made of glass materials or silicon wafers and insulating materials, so that the signal wire can be prevented from being out of order due to electricity leakage when the signal wire transmits signals while the signal wire is well sealed.
Drawings
FIG. 1 is a cross-sectional view of an open cell multiplex structure according to the present invention;
FIG. 2 is a top view of an open cell multiplex structure according to the present invention;
FIG. 3 is a schematic diagram of a bottom layer process of the present invention;
FIG. 4 is a schematic view of the capping process of the present invention;
FIG. 5 is a schematic diagram of a metallization process of the present invention;
FIG. 6 is a top view of section A-A' of FIG. 5;
FIG. 7 is a schematic view of the overall structure of a second embodiment of the present invention;
in the figure, 10-structural layer, 101-movable structure, 102-fixed structure, 102-1-first fixed structure, 102-2-second fixed structure, 102-3-third fixed structure, 102-4-fourth fixed structure, 11-bottom plate, 111-first movable structure cavity, 12-top plate, 121-second movable structure cavity, 13-isolation groove, 14-metal lead, 141-first metal lead, 142-second metal lead, 143-third metal lead, 144-fourth metal lead, 15-pad, 31-state a, 32-state b, 33-state c, 34-state d, 35-state e, 41-state f, 42-state g, 43-state h, 421-via, 51-state I, 6-insulating layer.
Detailed Description
The technical solutions of the present invention are further described in detail below with reference to the accompanying drawings, but the scope of the present invention is not limited to the following.
Example 1
As shown in fig. 1 and 2, an opening device of a micro-electromechanical device includes a bottom layer and a cap layer connected with the bottom layer by bonding; the bottom layer comprises a bottom plate 11 and a structural layer 10 connected with the bottom plate 11 in a bonding mode, a first movable structure cavity 111 is etched on the bottom plate 11, an isolation groove 13, a movable structure 101 and a fixed structure 102 are etched on the structural layer 10, the fixed structure 102 comprises a first fixed structure 102-1, a second fixed structure 102-2, a third fixed structure 102-3 and a fourth fixed structure 102-4, the isolation groove 13 isolates electricity in each fixed structure, and the fixed structure 102 and the movable structure 101 are connected together through a suspension structure; the cap layer comprises a top plate 12, the top plate 12 is connected with the structural layer 10 in a bonding mode, a lead through hole 421 is etched on the front surface of the top plate 12, a metal lead 14 and a bonding pad 15 for leading out signals are further arranged on the front surface of the top plate 12, the metal lead 14 comprises a first metal lead 141, a second metal lead 142, a third metal lead 143 and a fourth metal lead 144, the first metal lead 141 is connected with a first fixed structure 102-1, the second metal lead 142 is connected with a second fixed structure 102-2, the third metal lead 143 is connected with a third fixed structure 102-3, and the fourth metal lead 144 is connected with a fourth fixed structure 102-4.
An opening multiplexing method of a micro-electromechanical device comprises a bottom layer process, a capping process and a metallization process;
the bottom layer process comprises a bottom glass layer and a structural layer process, the bottom layer comprises a bottom plate 11 and a structural layer 10 connected in a bonding mode, the bottom plate 11 and the top plate 12 are made of glass, and the structural layer 10 is made of a silicon wafer.
As shown in fig. 3, the bottom layer process includes:
firstly, etching a first movable structure cavity 111 on a bottom plate 11 to form a state a 31;
secondly, sealing the bottom plate 11 and the structural layer 10 in a silicon-glass bonding mode to form a body b 32;
secondly, etching an isolation groove 13 on the structural layer 10 to form a state c 33;
secondly, backfilling the isolation groove 13 by a deposition process, carrying out surface planarization, and removing redundant fillers, wherein the fillers are silicon dioxide, so as to form a state d 34;
finally, the structural layer 10 is etched into two parts, a movable structure 101 and a fixed structure 102, said movable structure 101 and fixed structure 102 being connected together by a suspension structure, forming the state e 35; the movable structure 101 moves within a first movable structure cavity 111.
As shown in fig. 4, the capping process includes:
the cap layer includes a top plate 12,
firstly, etching a second movable structure cavity 121 on the back surface of the top plate 12 to form a state f 41;
secondly, etching a lead through hole 421 on the front surface of the top plate 12 to form a state g 42;
finally, the cap layer and the bottom layer are bonded together through silicon-glass to form an airtight environment, and a state h43 is formed;
as shown in fig. 5 and 6, the metallization process includes:
firstly, the fixed structure 102 is divided into a first fixed structure 102-1, a second fixed structure 102-2, a third fixed structure 102-3 and a fourth fixed structure 102-4 by the isolation groove 13, and the fixed structures are electrically isolated from each other;
then, depositing a metal layer on the surface of the cap layer, patterning the metal layer and finally forming an electrical connection to form a state i 51; the top metal layer is patterned into a plurality of metal leads 14 electrically isolated from each other, and the metal leads 14 include a first metal lead 141, a second metal lead 142, a third metal lead 143, and a fourth metal lead 144. The surface of the top plate 12 is also provided with a bonding pad 15, and the metal lead 14 and the bonding pad 15 are used for leading out signals.
Example 2
As shown in fig. 1 and 2, an opening device of a micro-electromechanical device includes a bottom layer and a cap layer connected with the bottom layer by bonding; the bottom layer comprises a bottom plate 11 and a structural layer 10 connected with the bottom plate 11 in a bonding mode, a first movable structure cavity 111 is etched on the bottom plate 11, an isolation groove 13, a movable structure 101 and a fixed structure 102 are etched on the structural layer 10, the fixed structure 102 comprises a first fixed structure 102-1, a second fixed structure 102-2, a third fixed structure 102-3 and a fourth fixed structure 102-4, the isolation groove 13 isolates electricity in each fixed structure, and the fixed structure 102 and the movable structure 101 are connected together through a suspension structure; the cap layer comprises a top plate 12, the top plate 12 is connected with the structural layer 10 in a bonding mode, a lead through hole 421 is etched on the front surface of the top plate 12, a metal lead 14 and a bonding pad 15 for leading out signals are further arranged on the front surface of the top plate 12, the metal lead 14 comprises a first metal lead 141, a second metal lead 142, a third metal lead 143 and a fourth metal lead 144, the first metal lead 141 is connected with a first fixed structure 102-1, the second metal lead 142 is connected with a second fixed structure 102-2, the third metal lead 143 is connected with a third fixed structure 102-3, and the fourth metal lead 144 is connected with a fourth fixed structure 102-4.
As shown in fig. 7, an opening multiplexing method of a micro-electromechanical device includes a bottom layer process, a capping process and a metallization process;
the bottom layer process comprises a bottom silicon chip layer and a structural layer process, the bottom layer comprises a bottom plate 11 and a structural layer 10 connected in a bonding mode, the bottom plate 11 and the top plate 12 are made of silicon chips, and the structural layer 10 is also made of silicon chips.
The bottom layer process comprises the following steps:
firstly, etching a first movable structure cavity 111 on a bottom plate 11 to form a state a 31;
secondly, sealing the bottom plate 11 and the structural layer 10 in a silicon-silicon bonding mode to form a body b 32;
secondly, etching an isolation groove 13 on the structural layer 10 to form a state c 33;
secondly, backfilling the isolation groove 13 by a deposition process, carrying out surface planarization, and removing redundant fillers, wherein the fillers are silicon dioxide, so as to form a state d 34;
finally, the structural layer 10 is etched into two parts, a movable structure 101 and a fixed structure 102, said movable structure 101 and fixed structure 102 being connected together by a suspension structure, forming the state e 35; the movable structure 101 moves within a first movable structure cavity 111.
The capping process comprises the following steps:
the cap layer includes a top plate 12,
firstly, etching a second movable structure cavity 121 on the back surface of the top plate 12 to form a state f 41;
secondly, etching a lead through hole 421 on the front surface of the top plate 12 to form a state g 42;
finally, the cap layer and the bottom layer are bonded together through silicon-silicon bonding to form an airtight environment, and a state h43 is formed;
the metallization process comprises the following steps:
firstly, the fixed structure 102 is divided into a first fixed structure 102-1, a second fixed structure 102-2, a third fixed structure 102-3 and a fourth fixed structure 102-4 by the isolation groove 13, and the fixed structures are electrically isolated from each other;
then, depositing a metal layer on the surface of the cap layer, patterning the metal layer and finally forming an electrical connection to form a state i 51; the top metal layer is patterned into a plurality of metal leads 14 electrically isolated from each other, and the metal leads 14 include a first metal lead 141, a second metal lead 142, a third metal lead 143, and a fourth metal lead 144; the surface of the top plate 12 is also provided with a bonding pad 15, and the metal lead 14 and the bonding pad 15 are used for leading out signals.
The insulating layer 6 is arranged between the bottom plate 11 and the structural layer 10, and between the top plate 12 and the structural layer 10, the insulating layer 6 between the top plate 12 and the structural layer 10 is only arranged between the top plate 12 part except the metal lead 14 and the structural layer 10, namely, the insulating layer 6 is not arranged between the metal lead 14 and the fixed structure 102, and the insulating layer 6 is made of silicon dioxide, silicon nitride or glass and the like, so that the signal line is prevented from being out of order due to power leakage when the signal line transmits signals.
Example 3
As shown in fig. 1 and 2, an opening device of a micro-electromechanical device includes a bottom layer and a cap layer connected with the bottom layer by bonding; the bottom layer comprises a bottom plate 11 and a structural layer 10 connected with the bottom plate 11 in a bonding mode, a first movable structure cavity 111 is etched on the bottom plate 11, an isolation groove 13, a movable structure 101 and a fixed structure 102 are etched on the structural layer 10, the fixed structure 102 comprises a first fixed structure 102-1, a second fixed structure 102-2, a third fixed structure 102-3 and a fourth fixed structure 102-4, the isolation groove 13 isolates electricity in each fixed structure, and the fixed structure 102 and the movable structure 101 are connected together through a suspension structure; the cap layer comprises a top plate 12, the top plate 12 is connected with the structural layer 10 in a bonding mode, a lead through hole 421 is etched on the front surface of the top plate 12, a metal lead 14 and a bonding pad 15 for leading out signals are further arranged on the front surface of the top plate 12, the metal lead 14 comprises a first metal lead 141, a second metal lead 142, a third metal lead 143 and a fourth metal lead 144, the first metal lead 141 is connected with a first fixed structure 102-1, the second metal lead 142 is connected with a second fixed structure 102-2, the third metal lead 143 is connected with a third fixed structure 102-3, and the fourth metal lead 144 is connected with a fourth fixed structure 102-4.
An opening multiplexing method of a micro-electromechanical device comprises a bottom layer process, a capping process and a metallization process;
the bottom layer process comprises a bottom silicon chip layer and a structural layer process, the bottom layer comprises a bottom plate 11 and a structural layer 10 connected in a bonding mode, the top plate 12 is made of glass, and the structural layer 10 and the bottom plate 11 are made of silicon chips.
The bottom layer process comprises the following steps:
firstly, etching a first movable structure cavity 111 on a bottom plate 11 to form a state a 31;
secondly, sealing the bottom plate 11 and the structural layer 10 in a silicon-silicon bonding mode to form a body b 32;
secondly, etching an isolation groove 13 on the structural layer 10 to form a state c 33;
secondly, backfilling the isolation groove 13 by a deposition process, carrying out surface planarization, and removing redundant fillers, wherein the fillers are silicon dioxide, so as to form a state d 34;
finally, the structural layer 10 is etched into two parts, a movable structure 101 and a fixed structure 102, said movable structure 101 and fixed structure 102 being connected together by a suspension structure, forming the state e 35; the movable structure 101 moves within a first movable structure cavity 111.
The capping process comprises the following steps:
the cap layer includes a top plate 12,
firstly, etching a second movable structure cavity 121 on the back surface of the top plate 12 to form a state f 41;
secondly, etching a lead through hole 421 on the front surface of the top plate 12 to form a state g 42;
finally, the cap layer and the bottom layer are bonded together through silicon-silicon bonding to form an airtight environment, and a state h43 is formed;
the metallization process comprises the following steps:
firstly, the fixed structure 102 is divided into a first fixed structure 102-1, a second fixed structure 102-2, a third fixed structure 102-3 and a fourth fixed structure 102-4 by the isolation groove 13, and the fixed structures are electrically isolated from each other;
then, depositing a metal layer on the surface of the cap layer, patterning the metal layer and finally forming an electrical connection to form a state i 51; the top metal layer is patterned into a plurality of metal leads 14 electrically isolated from each other, and the metal leads 14 include a first metal lead 141, a second metal lead 142, a third metal lead 143, and a fourth metal lead 144; the surface of the top plate 12 is also provided with a bonding pad 15, and the metal lead 14 and the bonding pad 15 are used for leading out signals.
An insulating layer is arranged between the bottom plate 11 and the structural layer 10, and the insulating layer is made of materials such as silicon dioxide, silicon nitride or glass, so that the signal line is prevented from being out of order due to power leakage when the signal line transmits signals.
Example 4
The method is further optimized on the basis of the opening multiplexing method of the micro-electromechanical device in the embodiment 2 or 3, and the bottom layer adopts an SOI silicon wafer. The SOI silicon chip is used for replacing the bonding of the bottom silicon chip and the structural layer, wherein the substrate of the SOI silicon chip is used as a bottom plate, the oxide layer is used as an insulating layer, and the top silicon is used as the structural layer, so that the problem of failure of a signal line due to power leakage during signal transmission can be avoided.
Example 5
As shown in fig. 1 and 2, an opening device of a micro-electromechanical device includes a bottom layer and a cap layer connected with the bottom layer by bonding; the bottom layer comprises a bottom plate 11 and a structural layer 10 connected with the bottom plate 11 in a bonding mode, a first movable structure cavity 111 is etched on the bottom plate 11, an isolation groove 13, a movable structure 101 and a fixed structure 102 are etched on the structural layer 10, the fixed structure 102 comprises a first fixed structure 102-1, a second fixed structure 102-2, a third fixed structure 102-3 and a fourth fixed structure 102-4, the isolation groove 13 isolates electricity in each fixed structure, and the fixed structure 102 and the movable structure 101 are connected together through a suspension structure; the cap layer comprises a top plate 12, the top plate 12 is connected with the structural layer 10 in a bonding mode, a lead through hole 421 is etched on the front surface of the top plate 12, a metal lead 14 and a bonding pad 15 for leading out signals are further arranged on the front surface of the top plate 12, the metal lead 14 comprises a first metal lead 141, a second metal lead 142, a third metal lead 143 and a fourth metal lead 144, the first metal lead 141 is connected with a first fixed structure 102-1, the second metal lead 142 is connected with a second fixed structure 102-2, the third metal lead 143 is connected with a third fixed structure 102-3, and the fourth metal lead 144 is connected with a fourth fixed structure 102-4.
An opening multiplexing method of a micro-electromechanical device comprises a bottom layer process, a capping process and a metallization process;
the bottom layer process comprises a bottom silicon chip layer and a structural layer process, the bottom layer comprises a bottom plate 11 and a structural layer 10 connected in a bonding mode, the bottom plate 11 is made of glass, and the structural layer 10 and the top plate 12 are made of silicon chips.
The bottom layer process comprises the following steps:
firstly, etching a first movable structure cavity 111 on a bottom plate 11 to form a state a 31;
secondly, sealing the bottom plate 11 and the structural layer 10 in a silicon-silicon bonding mode to form a body b 32;
secondly, etching an isolation groove 13 on the structural layer 10 to form a state c 33;
secondly, backfilling the isolation groove 13 by a deposition process, carrying out surface planarization, and removing redundant fillers, wherein the fillers are silicon dioxide, so as to form a state d 34;
finally, the structural layer 10 is etched into two parts, a movable structure 101 and a fixed structure 102, said movable structure 101 and fixed structure 102 being connected together by a suspension structure, forming the state e 35; the movable structure 101 moves within a first movable structure cavity 111.
The capping process comprises the following steps:
the cap layer includes a top plate 12,
firstly, etching a second movable structure cavity 121 on the back surface of the top plate 12 to form a state f 41;
secondly, etching a lead through hole 421 on the front surface of the top plate 12 to form a state g 42;
finally, the cap layer and the bottom layer are bonded together through silicon-silicon bonding to form an airtight environment, and a state h43 is formed;
the metallization process comprises the following steps:
firstly, the fixed structure 102 is divided into a first fixed structure 102-1, a second fixed structure 102-2, a third fixed structure 102-3 and a fourth fixed structure 102-4 by the isolation groove 13, and the fixed structures are electrically isolated from each other;
then, depositing a metal layer on the surface of the cap layer, patterning the metal layer and finally forming an electrical connection to form a state i 51; the top metal layer is patterned into a plurality of metal leads 14 electrically isolated from each other, and the metal leads 14 include a first metal lead 141, a second metal lead 142, a third metal lead 143, and a fourth metal lead 144; the surface of the top plate 12 is also provided with a bonding pad 15, and the metal lead 14 and the bonding pad 15 are used for leading out signals.
The insulating layer 6 is arranged between the top plate 12 and the structural layer 10, the insulating layer 6 is only arranged between the top plate 12 part except the metal lead 14 and the structural layer 10, namely the insulating layer 6 is not arranged between the metal lead 14 and the fixed structure 102, the insulating layer 6 is made of silicon dioxide, silicon nitride or glass, and the like, so that the signal line is prevented from being failed due to electricity leakage when the signal line transmits signals.
The foregoing is illustrative of the preferred embodiments of this invention, and it is to be understood that the invention is not limited to the precise form disclosed herein and that various other combinations, modifications, and environments may be resorted to, falling within the scope of the concept as disclosed herein, either as described above or as apparent to those skilled in the relevant art. And that modifications and variations may be effected by those skilled in the art without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (8)
1. An opening device of a micro-electromechanical device is characterized in that: the cap layer is connected with the bottom layer in a bonding mode; the bottom layer comprises a bottom plate (11) and a structural layer (10) connected with the bottom plate (11) in a bonding mode, a first movable structure cavity (111) is etched on the bottom plate (11), an isolation groove (13), a movable structure (101) and a fixed structure (102) are etched on the structural layer (10), the isolation groove (13) is arranged in the fixed structure (102), the fixed structure (102) and the movable structure (101) are connected together through a suspension structure, and the fixed structure (102) is divided into a plurality of parts; the cap layer comprises a top plate (12), the top plate (12) is connected with the structural layer (10) in a bonding mode, and an insulating layer (6) is arranged between the top plate (12) and the structural layer (10); lead through holes (421) are etched on the front surface of the top plate (12), and a plurality of metal leads (14) and bonding pads (15) for leading out signals are also arranged on the front surface of the top plate (12); a second movable structure cavity (121) is etched on the back surface of the top plate, and the second movable structure cavity (121) and the first movable structure cavity (111) form a movable structure cavity;
the fixing structure (102) comprises a first fixing structure (102-1), a second fixing structure (102-2), a third fixing structure (102-3) and a fourth fixing structure (102-4); the metal lead (14) comprises a first metal lead (141), a second metal lead (142), a third metal lead (143) and a fourth metal lead (144); the first metal lead (141) is connected with a first fixed structure (102-1), the second metal lead (142) is connected with a second fixed structure (102-2), the third metal lead (143) is connected with a third fixed structure (102-3), and the fourth metal lead (144) is connected with a fourth fixed structure (102-4);
the isolation groove (13) is arranged among the first fixing structure (102-1), the second fixing structure (102-2), the third fixing structure (102-3) and the fourth fixing structure (102-4).
2. A method for preparing an opening device of a micro electro mechanical device according to claim 1, wherein: the method comprises the following steps:
bottom layer process
Etching a first movable structure cavity (111) on the bottom plate (11);
the bottom plate (11) and the structural layer (10) are sealed in a bonding mode;
etching an isolation groove (13) on the structural layer (10);
backfilling the isolation groove (13) by a deposition process, carrying out surface planarization, and removing redundant fillers;
etching the structural layer (10) into a movable structure (101) and a fixed structure (102), wherein the movable structure (101) and the fixed structure (102) are connected together through a suspension structure;
capping process
Etching a second movable structure cavity (121) on the back of the top plate (12);
etching a lead through hole (421) on the front surface of the top plate (12);
bonding the cap layer and the bottom layer together to form an airtight environment;
metallization process
The fixed structure (102) is divided into a plurality of parts which are mutually and electrically isolated by the isolation grooves (13);
a metal layer is deposited on the surface of the cap layer, then the metal layer is patterned to form a plurality of metal leads (14) which are electrically isolated from each other, and finally the electrical connection is formed.
3. The method of claim 2, wherein: in the bottom layer process, the bottom plate (11) is a glass layer, the structural layer (10) is a silicon wafer, and the bottom plate (11) and the structural layer (10) are sealed in a silicon-glass bonding mode.
4. The method of claim 3, wherein: in the capping process, the top plate (12) is a glass layer, and the capping layer and the bottom layer are bonded together through silicon glass to form an airtight environment.
5. The method of claim 2, wherein: in the bottom layer process, the bottom plate (11) is a silicon wafer, the structural layer (10) is a silicon wafer, and the bottom plate (11) and the structural layer (10) are sealed in a silicon-silicon bonding mode; an insulating layer (6) is arranged between the bottom plate (11) and the structural layer (10), and the insulating layer is made of silicon dioxide, silicon nitride or glass materials.
6. The method of claim 5, wherein: in the capping process, the top plate (12) is a silicon wafer, the capping layer and the bottom layer are bonded together through silicon-silicon to form an airtight environment, an insulating layer (6) is arranged between the top plate (12) and the structural layer (10), and the insulating layer (6) is made of silicon dioxide, silicon nitride or glass materials.
7. The method of claim 2, wherein: in the capping process, the top plate (12) is a silicon wafer, the capping layer and the bottom layer are bonded together through silicon-silicon to form an airtight environment, and the bottom layer is an SOI silicon wafer.
8. The method according to any one of claims 2-7, wherein: in the bottom layer process, the filler is an electric insulator, and the electric insulator adopts silicon dioxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711258714.2A CN107986229B (en) | 2017-12-04 | 2017-12-04 | Opening device of micro-electro-mechanical device and preparation multiplexing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711258714.2A CN107986229B (en) | 2017-12-04 | 2017-12-04 | Opening device of micro-electro-mechanical device and preparation multiplexing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107986229A CN107986229A (en) | 2018-05-04 |
| CN107986229B true CN107986229B (en) | 2020-09-29 |
Family
ID=62035393
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711258714.2A Expired - Fee Related CN107986229B (en) | 2017-12-04 | 2017-12-04 | Opening device of micro-electro-mechanical device and preparation multiplexing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107986229B (en) |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1834000A (en) * | 2006-04-07 | 2006-09-20 | 美新半导体（无锡）有限公司 | Round piece class airtight packing technique having low depth-width ratio through hole |
| CN101432875A (en) * | 2006-04-26 | 2009-05-13 | 科锐香港有限公司 | Apparatus and method for use in mounting electronic elements |
| JP4574035B2 (en) * | 2001-02-27 | 2010-11-04 | 京セラ株式会社 | Manufacturing method of semiconductor element storage package |
| CN102149255A (en) * | 2010-02-04 | 2011-08-10 | 日月光半导体制造股份有限公司 | Forming method of multiple-lead through hole |
| CN103832964A (en) * | 2012-11-20 | 2014-06-04 | 苏州敏芯微电子技术有限公司 | Micro-electro-mechanical system device manufacturing method |
| CN103922267A (en) * | 2013-01-10 | 2014-07-16 | 深迪半导体(上海)有限公司 | Inertial sensor production and wafer level package process based on MEMS (micro-electromechanical system) |
| US8866002B1 (en) * | 2009-11-25 | 2014-10-21 | Amkor Technology, Inc. | Through wafer via structures for concentrated photovoltaic cells |
| CN104555896A (en) * | 2013-10-14 | 2015-04-29 | 飞思卡尔半导体公司 | MEMS sensor device with multi-stimulus sensing and method of fabrication |
| JP5790429B2 (en) * | 2011-11-17 | 2015-10-07 | セイコーエプソン株式会社 | Physical quantity sensor element, method for manufacturing physical quantity sensor element, and electronic apparatus |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4792143B2 (en) * | 2007-02-22 | 2011-10-12 | 株式会社デンソー | Semiconductor device and manufacturing method thereof |
-
2017
- 2017-12-04 CN CN201711258714.2A patent/CN107986229B/en not_active Expired - Fee Related
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4574035B2 (en) * | 2001-02-27 | 2010-11-04 | 京セラ株式会社 | Manufacturing method of semiconductor element storage package |
| CN1834000A (en) * | 2006-04-07 | 2006-09-20 | 美新半导体（无锡）有限公司 | Round piece class airtight packing technique having low depth-width ratio through hole |
| CN101432875A (en) * | 2006-04-26 | 2009-05-13 | 科锐香港有限公司 | Apparatus and method for use in mounting electronic elements |
| US8866002B1 (en) * | 2009-11-25 | 2014-10-21 | Amkor Technology, Inc. | Through wafer via structures for concentrated photovoltaic cells |
| CN102149255A (en) * | 2010-02-04 | 2011-08-10 | 日月光半导体制造股份有限公司 | Forming method of multiple-lead through hole |
| JP5790429B2 (en) * | 2011-11-17 | 2015-10-07 | セイコーエプソン株式会社 | Physical quantity sensor element, method for manufacturing physical quantity sensor element, and electronic apparatus |
| CN103832964A (en) * | 2012-11-20 | 2014-06-04 | 苏州敏芯微电子技术有限公司 | Micro-electro-mechanical system device manufacturing method |
| CN103922267A (en) * | 2013-01-10 | 2014-07-16 | 深迪半导体(上海)有限公司 | Inertial sensor production and wafer level package process based on MEMS (micro-electromechanical system) |
| CN104555896A (en) * | 2013-10-14 | 2015-04-29 | 飞思卡尔半导体公司 | MEMS sensor device with multi-stimulus sensing and method of fabrication |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107986229A (en) | 2018-05-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7402905B2 (en) | Methods of fabrication of wafer-level vacuum packaged devices | |
| CA2663918C (en) | Micromechanical component and method for fabricating a micromechanical component | |
| CN104303262B (en) | For the technique of a portion exposure sealing MEMS device at ambient | |
| US8748998B2 (en) | Sensor module | |
| AU2008271665B2 (en) | Method for the production of a component, and component | |
| US8941193B2 (en) | Method for manufacturing a hybrid integrated component | |
| US8049326B2 (en) | Environment-resistant module, micropackage and methods of manufacturing same | |
| US9452920B2 (en) | Microelectromechanical system device with internal direct electric coupling | |
| JP2010514180A (en) | Encapsulation module, method for its generation and use thereof | |
| US9790084B2 (en) | Micromechanical sensor device | |
| KR20070012656A (en) | Sensor device, sensor system and methods for manufacturing them | |
| CN110723712B (en) | MEMS device structure and manufacturing method | |
| JP2008046078A (en) | Micro electromechanical system element and manufacturing method thereof | |
| CN106744666B (en) | Micromechanical component | |
| CN107963609A (en) | A kind of total silicon MEMS wafer-grade vacuum encapsulation methods based on anode linkage | |
| CN109626318B (en) | Cover plate structure, manufacturing method thereof and capacitive sensor | |
| CN107986229B (en) | Opening device of micro-electro-mechanical device and preparation multiplexing method thereof | |
| CN107697882B (en) | Process for manufacturing a semiconductor device and corresponding semiconductor device | |
| US7531424B1 (en) | Vacuum wafer-level packaging for SOI-MEMS devices | |
| CN103229290A (en) | Eutectic bonding of thin chips on a carrier substrate | |
| CN114789987A (en) | Packaging structure for sensing and manufacturing method thereof | |
| US10654710B2 (en) | Semiconductor apparatus having flexible connecting members and method for manufacturing the same | |
| KR101184612B1 (en) | MEMS Structure and Method of Manufacturing thereof Using Method of Forming Through Electrode | |
| US20090283917A1 (en) | Systems and methods for vertical stacked semiconductor devices | |
| CN115092876A (en) | Airtight packaging structure of device with cavity |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20200929 Termination date: 20211204 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |