CN107978613A - Semiconductor light-sensing device and its photosensitive surface processing method - Google Patents
Semiconductor light-sensing device and its photosensitive surface processing method Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
Abstract
A kind of semiconductor light-sensing device and its photosensitive surface processing method, photosensitive surface processing method include：Semiconductor light-sensing device with sensitization function face is provided；The hydrophobic coating of printing opacity is formed on sensitization function face using molecular vapor deposition technique.In the assembling process of semiconductor image sensor module, the hydrophobic coating of printing opacity is avoided that solution and the particulate matters such as sensitization function face contact water, in order to avoid the defects of producing pixel imaging；Pass through molecular vapor deposition technique, the hydrophobic coating of printing opacity is formed at sensitization function face in the form of molecular layer, with the characteristic that thickness is small, caliper uniformity is good, the translucency of the hydrophobic coating of printing opacity is accordingly preferable, so as to avoid causing the optical property of semiconductor light-sensing device harmful effect, the thickness of the hydrophobic coating of printing opacity is smaller to be also avoided that air exercise line processing procedure causes harmful effect；To sum up, the present invention forms the hydrophobic coating of printing opacity by molecular vapor deposition technique, is conducive to improve the processing assembly yield of semiconductor image sensor module.
Description
Technical field
The present invention relates to field of semiconductor manufacture, more particularly to a kind of semiconductor light-sensing device and its photosensitive surface processing side
Method.
Background technology
In technical field of semiconductors, imaging sensor is a kind of semiconductor device that optical imagery can be converted into electric signal
Part.Passed based on the semiconductor image of cmos image sensor (CMOS Image Sensor, CIS) or Charged Couple (CCD) device
Sensor has been widely used for digital camera, camera cell phone, DV, medical camera device (such as gastroscope), automobile-used
Among the fields such as camera device.And as people pursue the continuous of image quality, to the resolution ratio of semiconductor image sensor
It is required that higher, the Pixel Dimensions smaller of the semiconductor image sensor.
With reference to reference to figure 1, a kind of structure diagram of semiconductor light-sensing device is shown, semiconductor image sensor 10 is equal
With a sensitization function face 11, include lenticule (Microlens) 20, filter coating under the sensitization function face successively
(Color Filters) 30 and semiconductor light sensing device 40, wherein, the sensitization function face 11 is the upper table of the lenticule 20
Face.Semiconductor light-sensing device receives sensing optical radiation signal by the sensitization function face 11, passes through 20 array of filter coating
The making choice property of optical radiation signal light (i.e. different colours light radiation) that is received is absorbed and by, by the semiconductor
The optical radiation signal that 30 array of light-sensitive device passes through selectivity is converted into corresponding (different colours) electric signal.
The various debris that the sensitization function is faced in external environment are typically very sensitive, especially because the liquid such as water
And various tiny dust things are easily absorbing in the sensitization function face, so that the defects of causing pixel to be imaged, even results in
Whole semiconductor image sensor failure.But cut and be separated to from the wafer for including multiple semiconductor image sensors
Assembling processing procedure into semiconductor image sensor module includes a series of working process steps, difficult in the working process step
To avoid dropping for the liquid such as water and various tiny dust things, liquid and the tiny dust thing may for good and all be adsorbed in institute
Sensitization function face is stated, so as to seriously affect the processing assembly yield of semiconductor image sensor module.
The content of the invention
The present invention solves the problems, such as to be to provide a kind of semiconductor light-sensing device and its photosensitive surface processing method, improves and partly lead
The processing assembly yield of body imaging sensor module.
To solve the above problems, the present invention provides a kind of photosensitive surface processing method of semiconductor light-sensing device, including：Carry
For semiconductor light-sensing device, the semiconductor light-sensing device has sensitization function face, includes under the sensitization function face and partly leads
Body light-sensitive device, the semiconductor light-sensing device receive sensing optical radiation signal by the sensitization function face, pass through described half
The optical radiation signal is converted into electric signal by conductor light-sensitive device；Using molecular vapor deposition technique, to the sensitization function
Face carries out being self-assembled into film process, and the hydrophobic coating of printing opacity is formed on the sensitization function face.
Optionally, described the step of being self-assembled into film process, includes：Lead into the chamber of the molecular vapor deposition technique
Enter self-assembled monolayer film precursor and water vapour；Technological parameter is controlled, to form the hydrophobic coating of the printing opacity.
Optionally, the light transmittance of the hydrophobic coating of the printing opacity is greater than or equal to 80%.
Optionally, also included under the sensitization function face：Filter coating on the semiconductor light sensing device, the filter
Light film is used to the making choice property of optical signal that the sensitization function face receives is absorbed and passed through.
Optionally, also included under the sensitization function face：Lenticule on the filter coating.
Optionally, the step of molecular vapor deposition technique further includes：To the chamber of the molecular vapor deposition technique
Inside it is passed through before self-assembled monolayer film precursor and water vapour, oxygen plasma processing is carried out to the sensitization function face.
Optionally, before the molecular vapor deposition technique, further include：Carry out deionized water cleaning.
Optionally, the parameter of the oxygen plasma processing includes：Reacting gas includes O2, process pressure is
0.01mTorr to 1000mTorr, the flow of reacting gas is 1sccm to 10000sccm, and the process time is 1 second to 10000 seconds.
Optionally, the parameter for being self-assembled into film process includes：Process time is 100 seconds to 10000 seconds, technological temperature
For 0 DEG C to 50 DEG C.
Optionally, the thickness of the hydrophobic coating of the printing opacity is
Optionally, the hydrophobic coating of the printing opacity is monomolecular.
Optionally, the material of the hydrophobic coating of the printing opacity is perfluoro decyl trichlorosilane, tetrahydrochysene octyltrichlorosilane, four
One or more in hydrogen octyl methyl dichlorosilane and octadecyl trichlorosilane alkane.
Optionally, the material of the filter coating is dyed polymers, and the material of the lenticule is transparent polymer.
Optionally, the semiconductor light-sensing device is cmos image sensor or charge coupling device.
Optionally, there is provided the semiconductor light-sensing device be integrated in wafer, alternatively, the semiconductor light-sensing device collection
Into in chip.
Correspondingly, the present invention also provides a kind of semiconductor light-sensing device, the semiconductor light-sensing device has sensitization function
Face, includes semiconductor light sensing device under the sensitization function face, the semiconductor light-sensing device passes through the sensitization function face
Sensing optical radiation signal is received, the optical radiation signal is converted into by electric signal by the semiconductor light sensing device；Described half
Conductor sensor devices further include：The hydrophobic coating of printing opacity, on the sensitization function face, the hydrophobic coating of printing opacity uses
Molecular vapor deposition technique is formed.
Optionally, the light transmittance of the hydrophobic coating of the printing opacity is greater than or equal to 80%.
Optionally, also included under the sensitization function face：Filter coating on the semiconductor light sensing device, the filter
Light film is used to the making choice property of optical signal that the sensitization function face receives is absorbed and passed through.
Optionally, also included under the sensitization function face：Lenticule on the filter coating.
Optionally, the thickness of the hydrophobic coating of the printing opacity is
Optionally, the hydrophobic coating of the printing opacity is monomolecular.
Optionally, the material of the hydrophobic coating of the printing opacity is perfluoro decyl trichlorosilane, tetrahydrochysene octyltrichlorosilane, four
One or more in hydrogen octyl methyl dichlorosilane and octadecyl trichlorosilane alkane.
Optionally, the material of the filter coating is dyed polymers, and the material of the lenticule is transparent polymer.
Optionally, the semiconductor light-sensing device is cmos image sensor or charge coupling device.
Optionally, the semiconductor light-sensing device is integrated in wafer, alternatively, the semiconductor light-sensing device is integrated in core
In piece.
Compared with prior art, technical scheme has the following advantages：
The present invention uses molecular vapor deposition technique, and self assembly film forming is carried out to the sensitization function face of semiconductor light-sensing device
Processing, forms the hydrophobic coating of printing opacity on the sensitization function face；In the assembling process of semiconductor image sensor module,
The hydrophobic coating of printing opacity can avoid solution and the particulate matters (Particle) such as the sensitization function face contact water, so as to keep away
The defects of exempting to produce pixel imaging；In addition, by molecular vapor deposition technique, the hydrophobic coating of printing opacity is with the shape of molecular layer
Formula is formed at the sensitization function face, therefore the hydrophobic coating of the printing opacity has the characteristic that thickness is small, caliper uniformity is good, institute
It is accordingly preferable to state the translucency of the hydrophobic coating of printing opacity, so as to avoid the hydrophobic coating of the printing opacity to the semiconductor sense
The optical property of optical device causes harmful effect, and the thickness of the hydrophobic coating of the printing opacity is smaller, moreover it is possible to avoids to follow-up
Routing (Wire Bond) processing procedure causes harmful effect, the wire in the routing processing procedure is facilitated penetration of the printing opacity hydrophobic
Coating and with the semiconductor light-sensing device realize be electrically connected；To sum up, institute is formed by way of molecular vapor deposition technique
The hydrophobic coating of printing opacity is stated, is conducive to improve the processing assembly yield of semiconductor image sensor module.
Brief description of the drawings
Fig. 1 is a kind of structure diagram of semiconductor light-sensing device；
Fig. 2 to Fig. 6 be semiconductor light-sensing device of the present invention one embodiment of photosensitive surface processing method in each step correspond to
Schematic diagram.
Embodiment
From background technology, assembling processing procedure of the defect management and control for semiconductor image sensor module is very crucial
, with the continuous improvement of the performance requirement to semiconductor light-sensing device, the defects of being imaged for pixel management and control is then more stringent.
In order to avoid defect, traditional way is to form protection on the sensitization function face of semiconductor light-sensing device by evaporation process
Layer, so as to prevent the semiconductor light-sensing device from touching the solution such as water and particulate matter in an assembling process.
But the protective layer mass uniformity formed by evaporation process is poor, and it is difficult to the guarantor to form thinner thickness
Sheath, so as to cause the translucency of the semiconductor light-sensing device to be deteriorated, and then causes the yield of the semiconductor light-sensing device
Decline；It is larger to be additionally, since the thickness of the protective layer, in routing (Wire Bond) processing procedure, wire is difficult to through described
Protective layer and with the semiconductor light-sensing device realize is electrically connected, be accordingly also easily reduced semiconductor image sensor module add
Work assembly yield.
In order to solve the technical problem, the present invention provides a kind of photosensitive surface processing method of semiconductor light-sensing device,
Including：Semiconductor light-sensing device is provided, the semiconductor light-sensing device has sensitization function face, included under the sensitization function face
There is semiconductor light sensing device, the semiconductor light-sensing device receives sensing optical radiation signal by the sensitization function face, passes through
The optical radiation signal is converted into electric signal by the semiconductor light sensing device；Using molecular vapor deposition technique, to the sense
Light functional surfaces carry out being self-assembled into film process, and the hydrophobic coating of printing opacity is formed on the sensitization function face.
The present invention uses molecular vapor deposition technique, and self assembly film forming is carried out to the sensitization function face of semiconductor light-sensing device
Processing, forms the hydrophobic coating of printing opacity on the sensitization function face；In the assembling process of semiconductor image sensor module,
The hydrophobic coating of printing opacity can avoid solution and the particulate matters such as the sensitization function face contact water, so as to avoid producing pixel
The defects of imaging；In addition, by molecular vapor deposition technique, the hydrophobic coating of printing opacity is formed at institute in the form of molecular layer
Sensitization function face is stated, therefore the hydrophobic coating of the printing opacity has the characteristic that thickness is small, caliper uniformity is good, the printing opacity is hydrophobic
The translucency of coating is accordingly preferable, so as to avoid light of the hydrophobic coating of the printing opacity to the semiconductor light-sensing device
Learn performance and cause harmful effect, and the thickness of the hydrophobic coating of the printing opacity is smaller, moreover it is possible to avoid making follow-up routing processing procedure
Into harmful effect, make the wire in the routing processing procedure facilitate penetration of the hydrophobic coating of the printing opacity and with the semiconductor sense
Optical device, which is realized, to be electrically connected；To sum up, the hydrophobic coating of the printing opacity is formed by way of molecular vapor deposition technique, is conducive to
Improve the processing assembly yield of semiconductor image sensor module.
It is understandable to enable the above objects, features and advantages of the present invention to become apparent, below in conjunction with the accompanying drawings to the present invention
Specific embodiment be described in detail.
Fig. 2 to Fig. 6 be semiconductor light-sensing device of the present invention one embodiment of photosensitive surface processing method in each step correspond to
Schematic diagram.
With reference to figure 2, there is provided semiconductor light-sensing device 100, the semiconductor light-sensing device 100 have sensitization function face 101,
Include semiconductor light sensing device 130 under the sensitization function face 101, the semiconductor light-sensing device 100 passes through described photosensitive
Functional surfaces 101 receive sensing optical radiation signal, and the optical radiation signal is converted into electricity by the semiconductor light sensing device 130
Signal.
The semiconductor light-sensing device 100 is used for through following process packaging technology to form semiconductor image sensor mould
Group.
In the present embodiment, the semiconductor light-sensing device 100 is imaging sensor, and the sensitization function face 101 refers to
The photosurface of described image sensor.
Imaging sensor is a kind of semiconductor devices that optical imagery can be converted into electric signal.It is described in the present embodiment
Imaging sensor is cmos image sensor (CMOS Image Sensor, CIS).In other embodiments, described image senses
Device can also be charge coupling device (CCD).
In the present embodiment, there is provided the semiconductor light-sensing device 100 be integrated in wafer.The wafer can use collection
Made by circuit production technique, correspondingly, the wafer includes multiple chips for being integrated with imaging sensor, the chip it
Between have Cutting Road (not shown), when subsequently being cut to the wafer, can be cut along the Cutting Road.
In other embodiments, there is provided the semiconductor light-sensing device can also be integrated in chip.
With reference to reference to figure 3 to Fig. 6, using molecular vapor deposition (Molecular Vapor Deposition, MVD) work
Skill, carries out being self-assembled into film process to the sensitization function face 101, forms that printing opacity is hydrophobic covers on the sensitization function face 101
Cap rock 300 (as shown in Figure 4).
The hydrophobic coating 300 of printing opacity is used to play a protective role to the sensitization function face 101.Specifically, half
In the assembling process of conductor imaging sensor module, the sensitization function face 101 readily access water and other solution and
Grain thing, therefore by forming the hydrophobic coating 300 of the printing opacity on the sensitization function face 101, on the one hand the printing opacity is dredged
Water coating 300 can contact water and other solution, the on the other hand hydrophobic covering of printing opacity to avoid the sensitization function face 101
Layer 300 can also play the role of isolating particulate matter, so that the defects of avoiding producing pixel imaging, and then improve semiconductor image and pass
The processing assembly yield of sensor module.
Moreover, the hydrophobic coating 300 of printing opacity has translucency, therefore, the hydrophobic coating 300 of printing opacity is set
Put, the influence to the optical property of the semiconductor light-sensing device 100 is smaller.
In the present embodiment, the hydrophobic coating 300 of printing opacity is formed using molecular vapor deposition technique.Wherein, molecule
Gas-phase deposition refers to using vapor mode deposition functionalization organic molecule, so as to be modified material surface and be improved.
Different according to material, MVD films can be used as hydrophobic, hydrophilic, biocompatibility, protectiveness or reactive coating, so as to fulfill
Difference in functionality.
By molecular vapor deposition technique, the hydrophobic coating 300 of printing opacity is formed at the sense in the form of molecular layer
On light functional surfaces 101, therefore be conducive to reduce the thickness of the hydrophobic coating 300 of the printing opacity, and make the hydrophobic covering of the printing opacity
Layer 300 has good caliper uniformity；The hydrophobic coating 300 of printing opacity has the spy that thickness is small, caliper uniformity is good
Property, should be able to mutually improve the translucency of the hydrophobic coating 300 of the printing opacity, so as to avoid the hydrophobic coating of the printing opacity
The optical property of 300 pairs of described image sensors causes harmful effect, and the thickness of the hydrophobic coating 300 of the printing opacity compared with
It is small, moreover it is possible to avoid causing harmful effect to the routing processing procedure in assembling process, make the wire in the routing processing procedure be easy to wear
Cross the hydrophobic coating 300 of the printing opacity and realize and be electrically connected with the semiconductor light-sensing device 100.To sum up, molecular vapor is passed through
The mode of depositing operation forms the hydrophobic coating 300 of the printing opacity, is conducive to improve the processing of semiconductor image sensor module
Assembly yield.
It should be noted that in the present embodiment, in order to avoid the formation of the hydrophobic coating 300 of the printing opacity is partly led to described
The optical property of body-sensing optical device 100 produces harmful effect, and the light transmittance of the hydrophobic coating 300 of printing opacity is greater than or equal to
80%.
The material of the hydrophobic coating 300 of printing opacity can be perfluoro decyl trichlorosilane (FDTS), tetrahydrochysene octyl group trichlorine
One or more in silane (FOTS), tetrahydrochysene octyl methyl dichlorosilane (FOMDS) and octadecyl trichlorosilane alkane (OTS).
The contact angle (Contact Angle) on hydrophobic 300 surface of coating of the printing opacity of the material is larger (to be reached
More than 100 °), therefore the hydrophobic coating 300 of the printing opacity has excellent hydrophobicity, so as to effectively avoid the photosensitive work(
Energy face 101 contacts water and other solution, so as to improve the processing assembly yield of semiconductor image sensor module.Wherein, connect
Feeler refers to the tangent line for the liquid-vapor interface made at gas, liquid, solid three-phase intersection point, this tangent line has a common boundary in one side of liquid and solid-liquid
Angle between line, contact angle are measuring for wetness degree；When contact angle is less than 90 °, then it is hydrophily to characterize the surface of solids,
I.e. liquid is easier to wetting solid, and contact angle is smaller, and hydrophily is better；When contact angle is more than 90 °, then characterizing the surface of solids is
Hydrophobicity, i.e. liquid are not easily wetted by solid, and contact angle is bigger, and hydrophobicity is better.
Moreover, the hydrophobic coating 300 of the printing opacity of the material has preferable heat endurance, at a higher temperature
(such as at a high temperature of 300 DEG C) still have it is good and stablize hydrophobicity and and the sensitization function face 101 combination
Property, therefore when the semiconductor light-sensing device 100 spontaneous heat problem occurs in use, the hydrophobic coating of printing opacity
It is relatively low that 300 pairs of 100 performances of semiconductor light-sensing device produce dysgenic probability.
In the present embodiment, the material of the hydrophobic coating 300 of printing opacity is perfluoro decyl trichlorosilane.Perfluoro decyl trichlorine
The contact angle of silane is 115 °, so as to be conducive to further improve the hydrophobicity of the hydrophobic coating 300 of the printing opacity.
Specifically, described the step of being self-assembled into film process, includes：The wafer is placed in the molecular vapor deposition work
After in the chamber of skill, self-assembled monolayer (Self-assembly Monolayer, SAM) film precursor is passed through into the chamber
And water vapour；Technological parameter is controlled, to form the hydrophobic coating 300 of the printing opacity.
The water vapour is used to be used as catalysis material, to promote the progress of depositing operation.Specifically, with reference to reference to 5 He of figure
Fig. 6, shows the schematic diagram of the molecular vapor deposition technique, and the material using the hydrophobic coating 300 of the printing opacity is as FDTS
Example, according to formula S iCl3H4C10F17+3H2O→Si(OH)3H4C10F17+ 3HCl, FDTS presomas are passed through into the chamber (such as
In Fig. 5 shown in dotted line frame 301) and water vapour (as shown in dotted line frame 302 in Fig. 5) after, the water vapour is to the FDTS forerunner
(Hydrolyze) is hydrolyzed to form Si-O-H keys in body (as shown in dotted line frame 303 in Fig. 5)；As shown in fig. 6, through hydrolysis
FDTS molecule depositions are on the sensitization function face 101, under the action of pattern ylid Chuihua molecule power, with the sensitization function face 101
Between form stronger self assembly covalent bond, so as to form the hydrophobic coating of the printing opacity on the sensitization function face 101
300。
It should be noted that the process time for being self-assembled into film process is unsuitable too short, it is also unsuitable long.It is if described
Process time is too short, then is difficult to be continuously formed the hydrophobic coating 300 of the printing opacity in the sensitization function face 101, or even go out
The regional area in the existing sensitization function face 101 is difficult to be formed the problem of printing opacity hydrophobic coating 300, is unfavorable for semiconductor
The lifting of the processing assembly yield of imaging sensor module；If the process time length, can cause unnecessary work on the contrary
The waste of skill resource and cost, and the process time it is long be also easy to cause the thickness of the hydrophobic coating 300 of the printing opacity excessive, from
And the light transmittance of the hydrophobic coating 300 of the printing opacity is easily reduced, and then to the optical property of the semiconductor light-sensing device 100
Cause harmful effect, and the thickness of the hydrophobic coating 300 of the printing opacity excessive can also cause harmful effect to follow-up routing processing procedure.
For this reason, in the present embodiment, the process time for being self-assembled into film process is 100 seconds to 10000 seconds.
It should also be noted that, the technological temperature for being self-assembled into film process is unsuitable too low, it is also unsuitable excessive.If institute
State that technological temperature is too low, then can reduce the synthesis speed of the hydrophobic coating 300 of the printing opacity, so that in process time certain feelings
Under condition, the formation quality of the hydrophobic coating 300 of the printing opacity is reduced；If the technological temperature is excessive, easily to being integrated in
The yield and performance of device and the semiconductor light-sensing device 100 in the wafer produce harmful effect.For this reason, this implementation
In example, the technological temperature for being self-assembled into film process is 0 DEG C to 50 DEG C.
In the present embodiment, by the way that the process time for being self-assembled into film process and technological temperature are set in zone of reasonableness
It is interior, and cooperate, so that while process efficiency and the printing opacity hydrophobic 300 mass of coating is improved, avoid to integrated
Harmful effect is produced in the yield and performance of the device in the wafer and the semiconductor light-sensing device 100.
It should be noted that the thickness T1 of the hydrophobic coating 300 of printing opacity should not be too large.The hydrophobic coating of printing opacity
300 thickness T1 is bigger, and the light transmittance of the hydrophobic coating 300 of printing opacity is smaller, the optics of the semiconductor light-sensing device 100
Performance is poorer；Further, since the hydrophobic coating 300 of printing opacity is formed using molecular vapor deposition technique, the printing opacity is dredged
Water coating 300 is formed in the form of molecular layer on the sensitization function face 101, i.e., the described hydrophobic coating 300 of printing opacity
Minimum thickness T1 is the thickness for the self-assembled monolayer being made of monomolecular.For this reason, in the present embodiment, the printing opacity is hydrophobic
The thickness T1 of coating 300 is
In the present embodiment, in order to further improve the optical property of the semiconductor light-sensing device 100, reduce follow-up routing
The technology difficulty of processing procedure, the hydrophobic coating 300 of printing opacity is monomolecular, so that the hydrophobic coating 300 of the printing opacity
It is transparent.
Moreover, by way of forming the hydrophobic coating 300 of the printing opacity on the wafer, also advantageously improve photosensitive
The efficiency of surface treatment, is accordingly conducive to the packaging efficiency of semiconductor image sensor module.
With reference to reference to figure 3, in the present embodiment, the step of molecular vapor deposition technique, further includes：To the molecule gas
It is passed through in the chamber of phase depositing operation before the self-assembled monolayer film precursor and water vapour, to the sensitization function face 101
Carry out oxygen plasma processing 200.
200 are handled by the oxygen plasma, to realize between the FDTS molecules and the sensitization function face 101
Covalent bonding together, so as to improve the bond strength of the hydrophobic coating 300 of the printing opacity and the sensitization function face 101；It is in addition, logical
Oxygen plasma processing 200 is crossed, the impurity such as greasy dirt on the functional surfaces 101 can also be removed, so as to improve the sense
The surface quality of light functional surfaces 101.
Specifically, after the wafer is placed in the chamber of the molecular vapor deposition technique, it is passed through into the chamber
Oxygen containing plasma, to carry out the oxygen plasma processing 200.
With reference to reference to figure 5, there is free-H keys since the sensitization function face 101 is (as shown in Figure 3), by institute
Stating sensitization function face 101 and carry out oxygen plasma 200 (as shown in Figure 3) of processing, O is combined with the free-H keys, so that
Hydroxyl (O-H) is generated on the sensitization function face 101, to realize the hydroxylating to the sensitization function face 101, and then is described
It is self-assembled into film process and good interface basis is provided.
Refer to figure 6 correspondingly, combining, it is described be self-assembled into film process during, self-assembled monolayer film precursor divides
Sub (i.e. silane coupling agent) one end reacts with the hydroxyl and generates silicone hydroxyl (Si-OH), so that anti-by dehydrating condensation
Should, the precursor molecule is formed the Covalent bonding together of Si-O-Si with the sensitization function face 101, and then described photosensitive
Functional surfaces 101 form the hydrophobic coating 300 (as shown in Figure 5) of the printing opacity, and the hydrophobic coating 300 of the printing opacity and the sense
The bond strength of light functional surfaces 101 is higher.
In the present embodiment, the reacting gas of the oxygen plasma processing 200 includes O2。
It should be noted that the process pressure of the oxygen plasma processing 200 is unsuitable too small, also should not be too large.If
The process pressure is too small, then can reduce the efficiency of the oxygen plasma processing 200, in the case where the process time is certain,
It can cause the hydroxylating effect variation to the sensitization function face 101, and then be easily reduced the hydrophobic coating 300 of the printing opacity and exist
The formation quality in the sensitization function face 101, in addition occur the sensitization function face 101 regional area be difficult to be formed it is described
The problem of light hydrophobic coating 300, be unfavorable for the lifting of the processing assembly yield of semiconductor image sensor module；If institute
State that process pressure is excessive, the technology stability for being easy to cause the oxygen plasma processing 200 is deteriorated, accordingly also easily to follow-up
The formation of the hydrophobic coating 300 of printing opacity produces harmful effect, and process risk is larger.For this reason, in the present embodiment, described oxygen etc.
The process pressure of gas ions processing 200 is 0.01mTorr to 1000mTorr.
It should also be noted that, the flow of the reacting gas of the oxygen plasma processing 200 is unsuitable too small, also should not mistake
Greatly.If the flow of the reacting gas is too small, in the case where the process time is certain, then easily occur caused by plasma
The insufficient amount of problem of body, so that cause the hydroxylating effect variation to the sensitization function face 101, and then easily to the printing opacity
The formation of hydrophobic coating 300 produces harmful effect, is unfavorable for the processing assembly yield of semiconductor image sensor module
Lifting；If the flow of the reacting gas is excessive, the waste of unnecessary process resource and cost will also result on the contrary, and also
It is easy to cause the bad stability of process pressure.For this reason, in the present embodiment, the reacting gas of the oxygen plasma processing 200
Flow be 1sccm to 10000sccm.
In addition, the process time of the oxygen plasma processing 200 is unsuitable too short, it is also unsuitable long.If the technique
Time is too short, in the case where process pressure and reaction gas flow are certain, then the hydroxylating in the sensitization function face 101 is imitated
Fruit phase strain differential, so that easily the formation to the hydrophobic coating of the printing opacity 300 produces harmful effect, is unfavorable for semiconductor image
The lifting of the processing assembly yield of sensor module；If the process time is long, unnecessary work will also result on the contrary
The waste of skill resource and cost, reduces process efficiency.For this reason, in the present embodiment, when the oxygen plasma handles 200 technique
Between be 1 second to 10000 seconds.
In the present embodiment, by by the oxygen plasma processing 200 process pressure, reacting gas flow and
Process time sets in the reasonable scope, and cooperates, so that while process efficiency and technology stability is improved, improves
To the hydroxylating effect in the sensitization function face 101.
In the present embodiment, before the molecular vapor deposition technique, further include：Carry out deionized water cleaning (DIW
Clean)。
Cleaned by the deionized water to remove the particulate matter in the sensitization function face 101, to improve the photosensitive work(
The surface quality in energy face 101, so as to improve the formation quality and the hydrophobic coating of the printing opacity of the hydrophobic coating of the printing opacity
With the bond strength in the sensitization function face 101, and then be conducive to further improve the processing of semiconductor image sensor module
Assembly yield.
Specifically, deionized water is sprayed to the center in the sensitization function face 101 using nozzle, and described image is passed
Sensor wafer rotates in a certain direction, so as to fulfill the surface clean to the sensitization function face 101.
With continued reference to Fig. 2, in the present embodiment, the semiconductor light-sensing device 100 includes multiple pixels (Pixel) unit,
Such as including feux rouges pixel unit, green light pixel unit and blue light pixel unit, correspondingly, the semiconductor light-sensing device 100
Include multiple filter coatings 120 and multiple semiconductor light sensing devices 130.
It should be noted that the present embodiment with the semiconductor light-sensing device 100 for preceding illuminated (Front
SideIllumination, FSI) illustrate exemplified by imaging sensor.In other embodiments, the semiconductor light-sensing device
It can also be back-illuminated type (Back Side Illumination, BSI) imaging sensor.
It should also be noted that, also included under the sensitization function face 101：On the semiconductor light sensing device 130
Filter coating 120, the filter coating 120 be used for the sensitization function face 101 receive making choice property of optical signal absorb and
Pass through.
In the present embodiment, according to actual process situation, the filter coating 120 is RGB filter coatings, that is to say, that the filter
Light film 120 is made of red filter film, green filter film and blue filter film.The multiple filter coating 120 is positioned to allow for not
The light of co-wavelength is by so that the light of specific wavelength enters corresponding semiconductor light by corresponding filter coating 120
In sensing device 130, reduce the probability of crosstalk generation；In addition, the filter coating 120 can also be to the semiconductor light sensing device
130 are protected, and filter the light sent via adjacent pixel unit, reduce the probability of crosstalk generation, so as to improve into
As sensitivity.
In the present embodiment, the material of the filter coating 120 is dyed polymers, and the filter coating 120 is using decoration method institute
It is made.Since decoration method has preferable correctness of shape of figure and high color contrast, the filter coating 120 has good solution
Analysis property and dyeability, and there is high transparency and high color purity, so as to be conducive to improve the semiconductor light-sensing device
100 optical property and yield.
In addition, also included under the sensitization function face 101：Lenticule (Microlens) on the filter coating 120
110, wherein, the sensitization function face 101 refers to top surface of the lenticule 110 backwards to 120 side of filter coating.Accordingly
, the hydrophobic coating 300 of printing opacity is covered on the lenticule 110.
Specifically, the lenticule 110 is convex lens shape, and the lenticule 110 is towards the bottom surface of the filter coating 120
For tabular surface.
In the present embodiment, the quantity of the lenticule 110 is multiple, the lenticule 110 and the semiconductor photosensitive device
Part 130 corresponds, so that by the optical radiation signal light focusing of reception to the semiconductor light sensing device 130.
In the present embodiment, the material transparent polymer of the lenticule 110, is, for example, polyimides.The lenticule 110
With higher light transmittance, so as to be conducive to improve the optical property and yield of the semiconductor light-sensing device 100.
It should be noted that in the present embodiment, using the top layer of the semiconductor light-sensing device 100 as the lenticule 110
Exemplified by illustrate.In other embodiments, it is described such as when the top layer of the semiconductor light-sensing device is the filter coating
Sensitization function face accordingly refers to top surface of the filter coating backwards to the semiconductor light sensing device side.
Correspondingly, the present invention also provides a kind of semiconductor light-sensing device.
With continued reference to Fig. 4, the structure diagram of one embodiment of semiconductor light-sensing device of the present invention is shown.
In the present embodiment, the semiconductor light-sensing device 100 has a sensitization function face 101, under the sensitization function face 101
Include semiconductor light sensing device 130, the semiconductor light-sensing device 100 receives sensing light by the sensitization function face 101
Radiation signal, electric signal is converted into by the semiconductor light sensing device 130 by the optical radiation signal；The semiconductor is photosensitive
Device 100 further includes：The hydrophobic coating 300 of printing opacity, on the sensitization function face 101, the hydrophobic coating 300 of printing opacity
Formed using molecular vapor deposition technique.
The semiconductor light-sensing device 100 is used for processed packaging technology to form semiconductor image sensor module.
In the present embodiment, the semiconductor light-sensing device 100 is image sensor cell, and the sensitization function face 101 refers to
Be described image sensor photosurface.
Imaging sensor is a kind of semiconductor devices that optical imagery can be converted into electric signal.It is described in the present embodiment
Imaging sensor is cmos image sensor (CMOS Image Sensor, CIS).In other embodiments, described image senses
Device can also be charge coupling device (CCD).
In the present embodiment, the semiconductor light-sensing device 100 is integrated in wafer.The wafer can use integrated circuit
Made by manufacturing technology, correspondingly, the wafer includes multiple chips for being integrated with imaging sensor, have between the chip
Cutting Road (not shown), when subsequently being cut to the wafer, can be cut along the Cutting Road.
In other embodiments, the semiconductor light-sensing device can also be integrated in chip.
The hydrophobic coating 300 of printing opacity is used to play a protective role to the sensitization function face 101.Specifically, half
In the assembling process of conductor imaging sensor module, the sensitization function face 101 readily access water and other solution and
Grain thing, therefore by setting the hydrophobic coating 300 of the printing opacity on the sensitization function face 101, on the one hand the printing opacity is dredged
Water coating 300 can contact water and other solution, the on the other hand hydrophobic covering of printing opacity to avoid the sensitization function face 101
Layer 300 can also play the role of isolating particulate matter, so that the defects of avoiding producing pixel imaging, and then improve semiconductor image and pass
The processing assembly yield of sensor module.
Moreover, the hydrophobic coating 300 of printing opacity has translucency, therefore, the hydrophobic coating 300 of printing opacity is set
Put, the influence to the optical property of the semiconductor light-sensing device 100 is smaller.
In the present embodiment, the hydrophobic coating 300 of printing opacity is formed using molecular vapor deposition technique.Wherein, molecule
Gas-phase deposition refers to using vapor mode deposition functionalization organic molecule, so as to be modified material surface and be improved.
Different according to material, MVD films can be used as hydrophobic, hydrophilic, biocompatibility, protectiveness or reactive coating, so as to fulfill
Difference in functionality.
By molecular vapor deposition technique, the hydrophobic coating 300 of printing opacity is formed at the sense in the form of molecular layer
On light functional surfaces 101, therefore be conducive to reduce the thickness of the hydrophobic coating 300 of the printing opacity, and make the hydrophobic covering of the printing opacity
Layer 300 has good caliper uniformity；The hydrophobic coating 300 of printing opacity has the spy that thickness is small, caliper uniformity is good
Property, should be able to mutually improve the translucency of the hydrophobic coating 300 of the printing opacity, so as to avoid the hydrophobic coating of the printing opacity
The optical property of 300 pairs of described image sensors causes harmful effect, and the thickness of the hydrophobic coating 300 of the printing opacity compared with
It is small, moreover it is possible to avoid causing harmful effect to the routing processing procedure in assembling process, make the wire in the routing processing procedure be easy to wear
Cross the hydrophobic coating 300 of the printing opacity and realize and be electrically connected with the semiconductor light-sensing device.To sum up, by using molecular vapor
The hydrophobic coating 300 of the printing opacity that depositing operation is formed, is conducive to improve the processing group of semiconductor image sensor module
Fill yield rate.
It should be noted that in the present embodiment, in order to avoid the setting of the hydrophobic coating 300 of the printing opacity is partly led to described
The optical property of body-sensing optical device 100 produces harmful effect, and the light transmittance of the hydrophobic coating 300 of printing opacity is greater than or equal to
80%.
The material of the hydrophobic coating 300 of printing opacity can be perfluoro decyl trichlorosilane, tetrahydrochysene octyltrichlorosilane, four
One or more in hydrogen octyl methyl dichlorosilane and octadecyl trichlorosilane alkane.
The contact angle on hydrophobic 300 surface of coating of the printing opacity of the material is larger (reaching more than 100 °), therefore institute
Stating the hydrophobic coating 300 of printing opacity has excellent hydrophobicity, so as to effectively avoid the sensitization function face 101 from contacting water and its
His solution, so as to improve the processing assembly yield of the semiconductor image sensor module.
Moreover, the hydrophobic coating 300 of the printing opacity of the material has preferable heat endurance, at a higher temperature
(such as at a high temperature of 300 DEG C) still have it is good and stablize hydrophobicity and and the sensitization function face 101 combination
Property, therefore when the semiconductor light-sensing device 100 spontaneous heat problem occurs in use, the hydrophobic coating of printing opacity
It is relatively low that 300 pairs of 100 performances of semiconductor light-sensing device produce dysgenic probability.
In the present embodiment, the material of the hydrophobic coating 300 of printing opacity is perfluoro decyl trichlorosilane.Perfluoro decyl trichlorine
The contact angle of silane is 115 °, so as to be conducive to further improve the hydrophobicity of the hydrophobic coating 300 of the printing opacity.
It should also be noted that, the thickness T1 of the hydrophobic coating 300 of printing opacity should not be too large.The hydrophobic covering of printing opacity
The thickness T1 of layer 300 is bigger, and the light transmittance of the hydrophobic coating 300 of printing opacity is smaller, the optics of the semiconductor light-sensing device
Performance is poorer；Further, since the hydrophobic coating 300 of printing opacity is formed using molecular vapor deposition technique, the printing opacity is dredged
Water coating 300 is formed in the form of molecular layer on the sensitization function face 101, i.e., the described hydrophobic coating 300 of printing opacity
Minimum thickness T1 is the thickness for the self-assembled monolayer being made of monomolecular.For this reason, in the present embodiment, the printing opacity is hydrophobic
The thickness T1 of coating 300 is
In the present embodiment, in order to further improve the optical property of the semiconductor light-sensing device 100, reduce routing processing procedure
Technology difficulty, the hydrophobic coating 300 of printing opacity is monomolecular, so that the hydrophobic coating 300 of the printing opacity is in saturating
Bright shape.
With continued reference to Fig. 4, in the present embodiment, the semiconductor light-sensing device 100 includes multiple pixels (Pixel) unit,
Such as including feux rouges pixel unit, green light pixel unit and blue light pixel unit, correspondingly, the semiconductor light-sensing device 100
Include multiple filter coatings 120 and multiple semiconductor light sensing devices 130.
It should be noted that the present embodiment with the semiconductor light-sensing device 100 for preceding illuminated (Front
SideIllumination, FSI) illustrate exemplified by imaging sensor.In other embodiments, the semiconductor light-sensing device
It can also be back-illuminated type (Back Side Illumination, BSI) imaging sensor.
It should also be noted that, also included under the sensitization function face 101：On the semiconductor light sensing device 130
Filter coating 120, the filter coating 120 be used for the sensitization function face 101 receive making choice property of optical signal absorb and
Pass through.
In the present embodiment, according to actual process situation, the filter coating 120 is RGB filter coatings, that is to say, that the filter
Light film 120 is made of red filter film, green filter film and blue filter film.The multiple filter coating 120 is positioned to allow for not
The light of co-wavelength is by so that the light of specific wavelength enters corresponding semiconductor light by corresponding filter coating 120
In sensing device 130, reduce the probability of crosstalk generation；In addition, the filter coating 120 can also be to the semiconductor light sensing device
130 are protected, and filter the light sent via adjacent pixel unit, reduce the probability of crosstalk generation, so as to improve into
As sensitivity.
In the present embodiment, the material of the filter coating 120 is dyed polymers, and the filter coating 120 is using decoration method institute
It is made.Since decoration method has preferable correctness of shape of figure and high color contrast, the filter coating 120 has good solution
Analysis property and dyeability, and there is high transparency and high color purity, so as to be conducive to improve the semiconductor light-sensing device
100 optical property and yield.
In addition, also included under the sensitization function face 101：Lenticule 110 on the filter coating 120, wherein, institute
State sensitization function face 101 and refer to top surface of the lenticule 110 backwards to 120 side of filter coating.Correspondingly, the printing opacity
Hydrophobic coating 300 is covered on the lenticule 110.
Specifically, the lenticule 110 is convex lens shape, and the lenticule 110 is towards the bottom surface of the filter coating 120
For tabular surface.
In the present embodiment, the quantity of the lenticule 110 is multiple, the lenticule 110 and the semiconductor photosensitive device
Part 130 corresponds, so that by the optical radiation signal light focusing of reception to the semiconductor light sensing device 130.
In the present embodiment, the material transparent polymer of the lenticule 110, is, for example, polyimides.The lenticule 110
With higher light transmittance, so as to be conducive to improve the optical property and yield of the semiconductor light-sensing device 100.
It should be noted that in the present embodiment, using the top layer of the semiconductor light-sensing device 100 as the lenticule 110
Exemplified by illustrate.In other embodiments, it is described such as when the top layer of the semiconductor light-sensing device is the filter coating
Sensitization function face accordingly refers to top surface of the filter coating backwards to the semiconductor light sensing device side.
Semiconductor light-sensing device 100 described in the present embodiment can use foregoing photosensitive surface processing method institute of the present invention shape
Into can also be formed using other methods.In the present embodiment, to the specific descriptions of the semiconductor light-sensing device 100, it please join
The corresponding description in previous embodiment is examined, details are not described herein for the present embodiment.
Although present disclosure is as above, the present invention is not limited to this.Any those skilled in the art, are not departing from this
In the spirit and scope of invention, it can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
Subject to the scope of restriction.
Claims (25)
- A kind of 1. photosensitive surface processing method of semiconductor light-sensing device, it is characterised in that including：Semiconductor light-sensing device is provided, the semiconductor light-sensing device has sensitization function face, included under the sensitization function face There is semiconductor light sensing device, the semiconductor light-sensing device receives sensing optical radiation signal by the sensitization function face, passes through The optical radiation signal is converted into electric signal by the semiconductor light sensing device；Using molecular vapor deposition technique, the sensitization function face is carried out being self-assembled into film process, in the sensitization function face The upper formation hydrophobic coating of printing opacity.
- 2. photosensitive surface processing method as claimed in claim 1, it is characterised in that described the step of being self-assembled into film process wraps Include：Self-assembled monolayer film precursor and water vapour are passed through into the chamber of the molecular vapor deposition technique；Technological parameter is controlled, to form the hydrophobic coating of the printing opacity.
- 3. photosensitive surface processing method as claimed in claim 1, it is characterised in that the light transmittance of the hydrophobic coating of printing opacity More than or equal to 80%.
- 4. photosensitive surface processing method as claimed in claim 1, it is characterised in that also included under the sensitization function face：Position Filter coating on the semiconductor light sensing device, the filter coating are used to carry out the optical signal that the sensitization function face receives Selective absorbing and pass through.
- 5. photosensitive surface processing method as claimed in claim 4, it is characterised in that also included under the sensitization function face：Position Lenticule on the filter coating.
- 6. photosensitive surface processing method as claimed in claim 2, it is characterised in that the step of the molecular vapor deposition technique Further include：Before being passed through self-assembled monolayer film precursor and water vapour into the chamber of the molecular vapor deposition technique, to institute State sensitization function face and carry out oxygen plasma processing.
- 7. photosensitive surface processing method as claimed in claim 1, it is characterised in that the molecular vapor deposition technique it Before, further include：Carry out deionized water cleaning.
- 8. photosensitive surface processing method as claimed in claim 6, it is characterised in that the parameter bag of the oxygen plasma processing Include：Reacting gas includes O2, process pressure is 0.01mTorr to 1000mTorr, the flow of reacting gas for 1sccm extremely 10000sccm, process time are 1 second to 10000 seconds.
- 9. photosensitive surface processing method as claimed in claim 2, it is characterised in that the parameter bag for being self-assembled into film process Include：Process time is 100 seconds to 10000 seconds, and technological temperature is 0 DEG C to 50 DEG C.
- 10. photosensitive surface processing method as claimed in claim 1, it is characterised in that the thickness of the hydrophobic coating of printing opacity ForExtremely
- 11. photosensitive surface processing method as claimed in claim 10, it is characterised in that the hydrophobic coating of printing opacity is individual layer Molecule.
- 12. photosensitive surface processing method as claimed in claim 1, it is characterised in that the material of the hydrophobic coating of printing opacity For in perfluoro decyl trichlorosilane, tetrahydrochysene octyltrichlorosilane, tetrahydrochysene octyl methyl dichlorosilane and octadecyl trichlorosilane alkane One or more.
- 13. photosensitive surface processing method as claimed in claim 5, it is characterised in that the material of the filter coating is poly- for dyeing Compound, the material of the lenticule is transparent polymer.
- 14. photosensitive surface processing method as claimed in claim 1, it is characterised in that the semiconductor light-sensing device is CMOS Imaging sensor or charge coupling device.
- 15. photosensitive surface processing method as claimed in claim 1, it is characterised in that the semiconductor light-sensing device of offer It is integrated in wafer, alternatively, the semiconductor light-sensing device is integrated in chip.
- 16. a kind of semiconductor light-sensing device, it is characterised in that the semiconductor light-sensing device has sensitization function face, the sense Include semiconductor light sensing device under light functional surfaces, the semiconductor light-sensing device receives sensing light by the sensitization function face Radiation signal, electric signal is converted into by the semiconductor light sensing device by the optical radiation signal；The semiconductor light-sensing device further includes：The hydrophobic coating of printing opacity, on the sensitization function face, the printing opacity is hydrophobic Coating is formed using molecular vapor deposition technique.
- 17. semiconductor light-sensing device as claimed in claim 16, it is characterised in that the light transmittance of the hydrophobic coating of printing opacity More than or equal to 80%.
- 18. semiconductor light-sensing device as claimed in claim 16, it is characterised in that also included under the sensitization function face：Position Filter coating on the semiconductor light sensing device, the filter coating are used to carry out the optical signal that the sensitization function face receives Selective absorbing and pass through.
- 19. semiconductor light-sensing device as claimed in claim 18, it is characterised in that also included under the sensitization function face：Position Lenticule on the filter coating.
- 20. semiconductor light-sensing device as claimed in claim 16, it is characterised in that the thickness of the hydrophobic coating of printing opacity isExtremely
- 21. semiconductor light-sensing device as claimed in claim 20, it is characterised in that the hydrophobic coating of printing opacity is individual layer point Son.
- 22. semiconductor light-sensing device as claimed in claim 16, it is characterised in that the material of the hydrophobic coating of printing opacity is In perfluoro decyl trichlorosilane, tetrahydrochysene octyltrichlorosilane, tetrahydrochysene octyl methyl dichlorosilane and octadecyl trichlorosilane alkane It is one or more.
- 23. semiconductor light-sensing device as claimed in claim 19, it is characterised in that the material of the filter coating polymerize for dyeing Thing, the material of the lenticule is transparent polymer.
- 24. semiconductor light-sensing device as claimed in claim 16, it is characterised in that the semiconductor light-sensing device is schemed for CMOS As sensor or charge coupling device.
- 25. semiconductor light-sensing device as claimed in claim 16, it is characterised in that the semiconductor light-sensing device is integrated in crystalline substance In circle, alternatively, the semiconductor light-sensing device is integrated in chip.
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| CN111429797A (en) * | 2020-04-30 | 2020-07-17 | 京东方科技集团股份有限公司 | Display device and manufacturing method |
| CN112310127A (en) * | 2019-07-26 | 2021-02-02 | 中芯集成电路（宁波）有限公司 | Packaging method of camera shooting assembly |
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