CN107968650A - A kind of low phase noise, wide frequency domain CMOS Integrated VCOs - Google Patents
A kind of low phase noise, wide frequency domain CMOS Integrated VCOs Download PDFInfo
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- CN107968650A CN107968650A CN201711371966.6A CN201711371966A CN107968650A CN 107968650 A CN107968650 A CN 107968650A CN 201711371966 A CN201711371966 A CN 201711371966A CN 107968650 A CN107968650 A CN 107968650A
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- 238000001914 filtration Methods 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 5
- 238000003491 array Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 2
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
- H03L7/00—Automatic control of frequency or phase; Synchronisation
- H03L7/06—Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop
- H03L7/08—Details of the phase-locked loop
- H03L7/099—Details of the phase-locked loop concerning mainly the controlled oscillator of the loop
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
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- Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
Abstract
The present invention discloses low phase noise, wide frequency domain CMOS Integrated VCOs, and circuit includes main vibration circuit and auxiliary circuit forms, and the main vibration circuit is made of LC passive networks, at least one MOS and the NMOS active load formed；Auxiliary circuit is made of LC filter circuits and capacitance tuning array；The main vibration circuit uses difference channel form, and the auxiliary circuit is filtered using tail current source；Main vibration circuit uses difference channel form, make circuit output waveform symmetry, effectively reduce oscillator phase, tail current source noise can be greatly lowered using tail current source filtering in auxiliary circuit, in addition coarse adjustment and fine tuning can be carried out to frequency using double capacitor arrays, not only frequency domain is wide for oscillating output waveform, but also linearity of tuning degree is high.By above method, a low phase noise, the oscillator of wide frequency domain can be obtained.Oscillator phase noise under the frequency deviation of 1M<115dBc@Hz, tuning range is up to 30%, in the integrated circuit that can be widely used for providing outstanding frequency source.
Description
Technical field
The present invention relates to a kind of low phase noise, wide frequency domain CMOS Integrated VCOs.
Background technology
Oscillator is one of important composition circuit in radio frequency chip, is chiefly used in providing in the high frequency source of precision.For example lock
Xiang Huan, frequency converter, frequency synthesizer etc., the quality of its performance integrally have a great impact chip.Weigh voltage controlled oscillator
Can leading indicator be phase noise and frequency domain (namely tuning range), it is voltage-controlled as communication signals frequency is higher and higher
The performance indicator of oscillator requires also higher and higher.
As active load, two can as shown in Figure 1, it uses NMOS for the circuit structure of existing tradition voltage controlled oscillator
Become capacitance C16, C17 and L4 and form passive network, wherein C16, C17 series connection is in parallel with L4 again, and active load is by N15, N16 group
Into the grid of N15 connects the drain electrode of N16, and the grid of N16 connects the drain electrode of N15, and the source electrode of N15, N16 are connected together, the drain electrode of N15
One end of inductance is connect, the drain electrode of N16 connects the other end of inductance, and power unit is made of N17 and VDD, and VDD connects the interposition of inductance
Put, N17, which drains, connects the source electrode of N15, N16, and the grid of N17 connects the source electrode ground connection of fixing point position VB2, N17.This structure phase is made an uproar
Sound is undesirable, and tuning range is narrow, and linearity of tuning degree is poor.
In conclusion how to provide, a kind of design is reasonable, and low phase noise applied widely, wide frequency domain CMOS are integrated
Voltage controlled oscillator becomes those skilled in the art's urgent problem to be solved.
The content of the invention
The technical problem to be solved in the present invention is that, for technical problem existing in the prior art, the present invention provides a kind of
Low phase noise rational in infrastructure, wide frequency domain CMOS Integrated VCOs, design is reasonable, simple in structure, applied widely.
In order to solve the above technical problem, the present invention provides a kind of low phase noise, wide frequency domain CMOS to integrate voltage-controlled shake
Device being swung, for providing outstanding frequency source circuit to outside, it is characterised in that circuit includes main vibration circuit and auxiliary circuit forms,
The main vibration circuit is made of LC passive networks, at least one MOS and the NMOS active load formed；Auxiliary circuit is filtered by LC
Circuit and capacitance tuning array composition；The main vibration circuit uses difference channel form, and the auxiliary circuit uses tail current
Source filters.
Further, the main vibration circuit includes C1, C2, C3, L1, L2 and N1, N2, N3, C1 in the passive network,
C2 series connection is in parallel with the inductance L1 again, and the NMOS active loads are made of two NMOS tubes of N1 and N2, wherein the grid of N1
Connect the drain electrode of N2, the grid of N2 connects the drain electrode of N1, and the source electrode of N1 and N2 connect same current potential；The PMOS active loads by P1 and
P2 is formed, and the wherein grid of P1 connects the drain electrode of P2, and the grid of P2 connects the drain electrode of P1, and the source electrode of P1 and P2 meet VDD；Three sub-circuits
One end of the drain electrode of middle P1 and N1 and inductance and capacitance is connected together as drain electrode and capacitance and the electricity of output V01, P2 and N2
The other end of sense is connected together as output V02.
Further, the auxiliary circuit includes L2, C3, N3 and switched capacitor array, and wherein L2 and mono- ends of C3 are connected on
The source electrode of N1 and N2, another drain electrode for terminating at N3 of L2, the other end ground connection of C3, the grid of N3 connect fixing point position VB1, source electrode
Ground connection；The switched capacitor array connects the both ends of the C1 and C2 in main vibration circuit respectively.
Further, the auxiliary circuit further includes N4 to N15 and C5 to C15, wherein, N3 and C4 series connection, N4 and C5 go here and there
Connection, N5 and C6 series connection and so on；
One end of N4 to N6 is connected to one end of C1 together with.One end of C4 to C6 is connected to the another of C1 together with
End；Together with, the one end with N3 to N6 together with for being connected to C1 is connected for one end of N7 to N9, and C7 is connected to C9 one end and C1
The other end be connected；
One end of N10 to N12 is connected to one end of C2 together with.One end of C10 to C12 is connected to the another of C2 together with
One end；Together with, the one end with N10 to N12 together with for being connected to C2 is connected for one end of N13 to N15, and C13 to C15 one end connects
It is connected on and is connected with the other end of C2.
Further, the substrate of all NMOS is all grounded in the circuit, and the substrate of all PMOS meets power vd D.
Compared with prior art, the present invention achieves following beneficial effect：Phase noise, and tuning range are improved, is changed
It has been apt to linearity of tuning degree.
Difference output is produced with passive oscillation network by differential coupling load, phase noise can be effectively reduced, its electricity
Road connection relation is that C1, C2 series connection are in parallel with inductance L1 again in passive network, and active load is divided into NMOS active loads and PMOS
Active load, NMOS active loads are made of two NMOS tubes of N1 and N2, and wherein the grid of N1 connects the drain electrode of N2, and the grid of N2 connects
The source electrode of the drain electrode of N1, N1 and N2 connect same current potential；PMOS active loads are made of P1 and P2, and the wherein grid of P1 connects P2's
Drain electrode, the grid of P2 connect the drain electrode of P1, and the source electrode of P1 and P2 meet VDD.The drain electrode of P1 and N1 and inductance and electricity in three sub-circuits
One end of appearance is connected together as the drain electrode of output V01, P2 and N2 and the other end of capacitance and inductance is connected together as
Export V02.In addition to further reducing tail current brings phase noise, using tail current source filtering technique and LC secondary filterings
Technology reduces the second harmonics technique that tail current source frequency conversion introduces.Its circuit connecting relation is, a termination N1 of L2 and C3,2
Source electrode, wherein C3 are mainly used for filtering out harmonic waves more than two frequencys multiplication, another termination tail current pipe N3 of L2, the parasitic capacitance with N3
Frequency-selective network is formed, only allows fundamental frequency signal by the way that while L2 can also improve the AC impedance of N3, prevent that deteriorating phase makes an uproar
Sound.
Design above using difference output mode, LC filtering techniques and can be effectively reduced using switched capacitor array
Phase noise and raising tuning range and the linearity, can be obviously improved the shortcoming of traditional voltage controlled oscillator, circuit design letter
It is single, excellent performance.Under smic0.18 micron nominal techniques, emulated using Candence Spectre emulators, it is as a result as follows：
Phase noise：- 115dBc/Hz@1MHz, tuning range 30%, linearity of tuning degree are good.
Brief description of the drawings
Attached drawing described herein is used for providing a further understanding of the present invention, forms the part of the present invention, this hair
Bright schematic description and description is used to explain the present invention, does not form inappropriate limitation of the present invention.In the accompanying drawings：
Fig. 1 is the electrical block diagram of traditional voltage controlled oscillator；
Fig. 2 is the main vibration circuit structure diagram of the present invention；
Fig. 3 is the auxiliary circuit structure diagram of the present invention.
Embodiment
Some vocabulary has such as been used to censure specific components among specification and claim.Those skilled in the art should
It is understood that hardware manufacturer may call same component with different nouns.This specification and claims are not with name
The difference of title is used as the mode for distinguishing component, but is used as the criterion of differentiation with the difference of component functionally.Specification
Subsequent descriptions for implement the application better embodiment, so it is described description be for the purpose of the rule for illustrating the application,
It is not limited to scope of the present application.The protection domain of the application is when subject to appended claims institute defender.
The application is described in further detail below in conjunction with attached drawing, but not as the restriction to the application.
Embodiment one：
Main vibration circuit structure diagram such as Fig. 1 Fig. 2 present invention, shown in the auxiliary circuit structure diagram of Fig. 3 present invention,
A kind of low phase noise, wide frequency domain CMOS Integrated VCOs, for providing outstanding frequency source circuit to outside, its feature exists
In circuit includes main vibration circuit and auxiliary circuit forms, and the main vibration circuit is by LC passive networks, at least one MOS and NMOS
The active load composition of composition；Auxiliary circuit is made of LC filter circuits and capacitance tuning array；The main vibration circuit uses
Difference channel form, the auxiliary circuit are filtered using tail current source.
The main vibration circuit includes C1, C2, C3, L1, L2 and N1, N2, N3, and C1, C2 connect again in the passive network
In parallel with the inductance L1, the NMOS active loads are made of two NMOS tubes of N1 and N2, and wherein the grid of N1 connects the leakage of N2
Pole, the grid of N2 connect the drain electrode of N1, and the source electrode of N1 and N2 connect same current potential；The PMOS active loads are made of P1 and P2,
The wherein grid of P1 connects the drain electrode of P2, and the grid of P2 connects the drain electrode of P1, and the source electrode of P1 and P2 meet VDD；In three sub-circuits P1 and
One end of the drain electrode of N1 and inductance and capacitance is connected together as the another of the drain electrode of output V01, P2 and N2 and capacitance and inductance
One end is connected together as output V02.
The auxiliary circuit includes L2, C3, N3 and switched capacitor array, and wherein L2 and mono- ends of C3 are connected on the source of N1 and N2
Pole, another drain electrode for terminating at N3 of L2, the other end ground connection of C3, the grid of N3 connect fixing point position VB1, source electrode ground connection；It is described
Switched capacitor array connects the both ends of the C1 and C2 in main vibration circuit respectively.The auxiliary circuit further includes N4 to N15 and C5 extremely
C15, wherein, N3 and C4 series connection, N4 and C5 series connection, N5 and C6 series connection and so on；One end of N4 to N6 is connected to C1 together with
One end.One end of C4 to C6 is connected to the other end of C1 together with；One end of N7 to N9 is connected to C1's and N3 together with
It is connected to the one end of N6 together with, C7 is connected to C9 one end to be connected with the other end of C1；One end of N10 to N12 is together with, even
It is connected on one end of C2.One end of C10 to C12 is connected to the other end of C2 together with；One end of N13 to N15 is together with, connection
It is connected in one end with N10 to N12 together with of C2, C13 is connected to C15 one end to be connected with the other end of C2.
Wherein, the substrate of all NMOS is all grounded in the circuit, and the substrate of all PMOS meets power vd D
Some preferred embodiments of the application have shown and described in described above, but as previously described, it should be understood that the application
Be not limited to form disclosed herein, be not to be taken as the exclusion to other embodiment, and available for various other combinations,
Modification and environment, and above-mentioned teaching or the technology or knowledge of association area can be passed through in application contemplated scope described herein
It is modified., then all should be in this Shen and changes and modifications made by those skilled in the art do not depart from spirit and scope
Please be in the protection domain of appended claims.
Claims (5)
1. a kind of low phase noise, wide frequency domain CMOS Integrated VCOs, for providing outstanding frequency source circuit to outside, its
It is characterized in that, circuit includes main vibration circuit and auxiliary circuit forms, and the main vibration circuit is by LC passive networks, at least one MOS
With the active load composition of NMOS compositions；Auxiliary circuit is made of LC filter circuits and capacitance tuning array；The master shakes electricity
Road uses difference channel form, and the auxiliary circuit is filtered using tail current source.
2. a kind of low phase noise according to claim 1, wide frequency domain CMOS Integrated VCOs, it is characterised in that
The main vibration circuit includes C1, C2, C3, L1, L2 and N1, N2, N3, in the passive network C1, C2 series connection again with the electricity
It is in parallel to feel L1, the NMOS active loads are made of two NMOS tubes of N1 and N2, and wherein the grid of N1 connects the drain electrode of N2, the grid of N2
Pole connects the drain electrode of N1, and the source electrode of N1 and N2 connect same current potential；The PMOS active loads are made of P1 and P2, wherein the grid of P1
Pole connects the drain electrode of P2, and the grid of P2 connects the drain electrode of P1, and the source electrode of P1 and P2 meet VDD；In three sub-circuits the drain electrode of P1 and N1 with
One end of inductance and capacitance is connected together as output V01, and the drain electrode of P2 and N2 and the other end of capacitance and inductance are connected to
Together as output V02.
3. a kind of low phase noise, wide frequency domain CMOS Integrated VCOs according to claims 1 or 2, its feature
It is, the auxiliary circuit includes L2, C3, N3 and switched capacitor array, and wherein L2 and mono- ends of C3 are connected on the source electrode of N1 and N2,
Another drain electrode for terminating at N3 of L2, the other end ground connection of C3, the grid of N3 connect fixing point position VB1, source electrode ground connection；The switch
Capacitor array connects the both ends of the C1 and C2 in main vibration circuit respectively.
4. a kind of low phase noise according to claim 3, wide frequency domain CMOS Integrated VCOs, it is characterised in that
The auxiliary circuit further includes N4 to N15 and C5 to C15, wherein, N3 and C4 series connection, N4 and C5 series connection, N5 and C6 connect successively
Analogize；
One end of N4 to N6 is connected to one end of C1 together with.One end of C4 to C6 is connected to the other end of C1 together with；N7
To one end of N9 together with, the one end with N3 to N6 together with for being connected to C1 is connected, and C7 to C9 one end is connected to another with C1
One end is connected；
One end of N10 to N12 is connected to one end of C2 together with.One end of C10 to C12 is connected to the another of C2 together with
End；Together with, the one end with N10 to N12 together with for being connected to C2 is connected for one end of N13 to N15, and C13 to C15 one end is connected
It is connected in the other end with C2.
5. a kind of low phase noise according to claim 4, wide frequency domain CMOS Integrated VCOs, it is characterised in that
The substrate of all NMOS is all grounded in the circuit, and the substrate of all PMOS meets power vd D.
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| CN201711371966.6A CN107968650A (en) | 2017-12-19 | 2017-12-19 | A kind of low phase noise, wide frequency domain CMOS Integrated VCOs |
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| CN207588841U (en) * | 2017-12-19 | 2018-07-06 | 长沙学院 | A kind of low phase noise, wide frequency domain CMOS Integrated VCOs |
-
2017
- 2017-12-19 CN CN201711371966.6A patent/CN107968650A/en active Pending
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| US20050007160A1 (en) * | 2003-07-10 | 2005-01-13 | Neff Robert M. R. | Tunable differential transconductor and adjustment method |
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