CN107968599A - Using the electricity energy harvester and method of the double localization characteristics of the beam of phonon crystal containing defect - Google Patents
Using the electricity energy harvester and method of the double localization characteristics of the beam of phonon crystal containing defect Download PDFInfo
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- CN107968599A CN107968599A CN201711172557.3A CN201711172557A CN107968599A CN 107968599 A CN107968599 A CN 107968599A CN 201711172557 A CN201711172557 A CN 201711172557A CN 107968599 A CN107968599 A CN 107968599A
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- 230000007547 defect Effects 0.000 title claims abstract description 71
- 239000013078 crystal Substances 0.000 title claims abstract description 39
- 230000005611 electricity Effects 0.000 title claims abstract description 19
- 230000004807 localization Effects 0.000 title claims abstract description 19
- 238000000034 method Methods 0.000 title claims abstract description 9
- 239000000463 material Substances 0.000 claims abstract description 37
- 230000005284 excitation Effects 0.000 claims description 5
- 238000013461 design Methods 0.000 claims description 4
- 230000000737 periodic effect Effects 0.000 claims description 4
- 230000000644 propagated effect Effects 0.000 claims description 3
- 238000009434 installation Methods 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims 1
- 238000010348 incorporation Methods 0.000 claims 1
- 238000010276 construction Methods 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 4
- 238000005452 bending Methods 0.000 abstract description 2
- 238000005259 measurement Methods 0.000 description 6
- 239000002033 PVDF binder Substances 0.000 description 5
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 239000000835 fiber Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 230000002950 deficient Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229920001651 Cyanoacrylate Polymers 0.000 description 1
- 239000004830 Super Glue Substances 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N2/00—Electric machines in general using piezoelectric effect, electrostriction or magnetostriction
- H02N2/18—Electric machines in general using piezoelectric effect, electrostriction or magnetostriction producing electrical output from mechanical input, e.g. generators
- H02N2/186—Vibration harvesters
Abstract
The invention discloses the electricity energy harvester and method of a kind of double localization characteristics of application phonon crystal containing defect beam.Including the beam of phonon crystal containing defect and piezoelectric, phonon crystal beam is the cycle is alternately arranged the cantilever beam formed in the longitudinal direction by two kinds of material cells, the beam of phonon crystal containing defect at least one existing defects in the material cell of fixing end, piezoelectric are located in the material cell of existing defects.The electricity energy harvester of the present invention using phonon crystal girder construction point defects to bending wave localization the defects of step response and band gap by energy localization front end (close to vibration source) double localized effect, the special efficacy of other corresponding peak power outputs of passband formant is much larger than using the maximum power that output is gathered under defect state frequency, the piezoelectric layer of piezoelectric is subject to mechanical stress to export alternating voltage, realizes the collection of energy.
Description
Technical field
The invention belongs to mechanical energy to gather field, more particularly to a kind of double localizations spies of application phonon crystal containing defect beam
The electricity energy harvester and method of property.
Background technology
Phonon crystal is a kind of periodic structure with elastic wave or acoustic band gap.The band gap properties table of phonon crystal
Bright, corresponding elastic wave or sound wave are propagated in periodic structure and can be suppressed in the range of bandgap frequency.When perfect type phonon
When the periodicity of crystal is by destroying, it is possible to defect state occur in original band gap.Defect state is passband, its corresponding bullet
Property ripple or sound wave can the localizations or along line defect direction direction propagation at the point defect of phonon crystal.
Mechanical vibrational energy is ubiquitous, these vibrational energies may all be collected together and be set applied to the electronics of low-power
It is standby.Most of piezoelectric energy collector employs cantilever beam structure, and collection position is generally close to vibration source arrangement.Piezoelectric energy
Self-powered system of the acquisition technique as a kind of long-term or even unlimited life cycle, (for example can shake the energy of nature
Energy) electronic equipment that electric energy is applied to low-power is gathered and is converted into, advantageously account for conventional batteries service life
The problems such as short, frequent replacement and space occupancy.Most of piezoelectric energy collector employs cantilever beam structure, but it is gathered
Resonant frequency and collection position it is single and output power is smaller.At present, substantial amounts of scholar has used the piezoelectricity of piezoelectric
Effect gathers the energy in structure.When the piezoelectric layer of piezoelectric is subject to mechanical stress, the dynamic strain of piezoelectric layer can lead to
Cross electrode and directly export alternating voltage, the quantity of electric charge that piezoelectric layer produces is proportional to the strain that it is produced.Present invention design
The beam energy collecting device of phonon crystal containing defect take full advantage of under defect state frequency great dynamic strain feature at point defect and come
Piezoelectric energy collection is carried out, while has taken into account phonon-side bands and collector is arranged energy localization in front end close to vibration source,
So as to be issued to highly efficient energy output in double effect.
The content of the invention
The purpose of the present invention is overcome the deficiencies of the prior art and provide a kind of double localizations of application phonon crystal containing defect beam
The electricity energy harvester and method of characteristic.
A kind of electricity energy harvester of the double localization characteristics of application phonon crystal containing defect beam, including phonon crystal containing defect
Beam and piezoelectric, the phonon crystal containing defect beam are that the cycle is alternately arranged group in the longitudinal direction by two kinds of material cells
Into cantilever beam, the size of two of which material cell is identical, the phonon crystal beam close to one end of fixing end at least
One material cell existing defects, the piezoelectric are located in the material cell of existing defects.
Preferably, the defects of the defects of described is point defect, the material cell of existing defects is that the thickness of material is lowered；
The material cell of the existing defects is located on first lattice (to be counted) from fixing end, but cannot be directly connected to fixing end.
Preferably, more than ten times are differed in the Young's modulus of two kinds of material cells.
Preferably, the cycle of the cantilever beam is more than 8.
The planform of material cell (cantilever beam) can be cylinder, cuboid, triangular prism etc., but if be cylindricality,
Prism can cause analysis to complicate, and the moment of flexure and neutral axis in section complicate；It is easy to calculate also just using the rectangular physical efficiency of rule
In excitation source excitation)；Material cell (cantilever beam) length to height ratio is bigger, and low frequency is got in the position of band gap and defect state.Piezoelectric membrane according to
It is attached to by super glue in material cell.
The invention also discloses a kind of energy-collecting method of the double localization characteristics of application phonon crystal containing defect beam：
1) according to the vibration frequency design energy harvester of working environment, the defects of making electricity energy harvester state frequency with
The frequency of the principal vibration ripple of working environment is identical；
2) by the installation of designed electricity energy harvester in the work environment, wherein one end of existing defects is as fixation
End；The vibrational energy excitation phonon crystal vibration of beam response of working environment, the band gap properties of phonon crystal beam cause band gap frequency
Corresponding elastic wave or sound wave are propagated in periodic structure and can be suppressed in the range of rate, thus by the energy localization of ripple by
The front end of nearly vibration source, and the corresponding elastic wave of the defects of bandgap range state or the sound wave local at the point defect of phonon crystal
Change；
The maximum power that output is gathered under defect state frequency is more than other corresponding peak power outputs of passband formant, position
It is subject to mechanical stress in the piezoelectric layer of the piezoelectric in the material cell of existing defects, the dynamic strain of piezoelectric layer is straight by electrode
Output alternating voltage is connect, realizes the collection of energy.
The electricity energy harvester of the present invention utilizes the defects of phonon crystal girder construction point defects are to bending wave localization state
Energy localization in the double localized effect of front end (close to vibration source), is utilized collection output under defect state frequency by characteristic and band gap
Maximum power is much larger than the special efficacy of other corresponding peak power outputs of passband formant, is the beam of phonon crystal containing defect in energy
The application in collection field provides a kind of new method.Apparatus of the present invention structure is rearranged by material cell, can arbitrarily be adjusted scarce
Fall into unit position and defect shape, can according to the frequency special efficacy of working environment change cantilever beam defect position, flexible design,
Wide application.The present invention overcomes the resonant frequency of existing cantilever beam electricity energy harvester collection and collection position are single and defeated
Go out lower-powered problem, there is provided a kind of vibrational energy harvester of long time stability.
Brief description of the drawings
Fig. 1 is the specific embodiment of the cantilever beam structure of the invention containing defect.
Fig. 2 is the verification device of the vibrational energy harvester comprising the present invention.
The corresponding collection characteristics of Fig. 3 bit frequencies 400-1000Hz：(a) transmission curve；(b) different frequency is corresponding optimal defeated
Go out voltage；(c) the corresponding peak power output of different frequency.
Embodiment
The electricity energy harvester of the double localization characteristics of application phonon crystal containing defect beam of the present invention, including phonon containing defect
Crystal beam and piezoelectric, by two kinds of material cells, the cycle is alternately arranged and forms the phonon crystal beam in the longitudinal direction
Cantilever beam, the size of two of which material cell is identical, and the phonon crystal beam is close to one end of fixing end at least one
A material cell existing defects, the piezoelectric are located in the material cell of existing defects.
As shown in Figure 1, in one particular embodiment of the present invention, cantilever beam of the invention is 10 cycle aluminium/organic
The phonon crystal beam of glass composition, wherein material 1 and material 2 represent aluminium and organic glass respectively and corresponding dimensional parameters are
0.08m*0.015m*0.015m, and defective material 3 is organic glass and corresponding dimensional parameters are 0.08m*0.015m*
0.008m.The density of aluminium 6061 is 2735kg/m3, Young's modulus 7.47*1010Pa, the density of organic glass is 1142kg/
m3, Young's modulus 4.5*109Pa, the Poisson's ratio of two kinds of materials is all 0.33.Piezoelectric uses PVDF piezoelectric membranes, is located at
On defective material 3.
The defects of cantilever beam structure, state showed as in transmission curve occurring a formant in band gap.The present invention utilizes optical fiber
Grating measuring technology test measurement obtains the defects of Fig. 1 center sill structures state.The present invention is connected using dSPACE real-time control systems
Voltage amplifier input accumulation signal gives piezoelectric stack ceramic actuator, and actuator is located at cantilever beam fixing end bottom, excitation sound
Sub- crystal vibration of beam response.The fiber grating displacement sensor being connected with girder construction free end, which experiences vibration, causes displacement to become
Change, the displacement signal for producing change is input to the progress data acquisition of dSPACE real-time control systems by fiber grating sensing system
With processing.It is after the defects of finding the beam of phonon crystal containing point defect by fiber grating e measurement technology state frequency location, piezoelectricity is thin
Film PVDF (LDT0-028K/L, Measurement Specialties, USA) is pasted onto scarce along x-axis direction (length direction)
Fall at 3 upper surface of material (such as Fig. 1), the output electrode of PVDF is connected with an extraneous impedance (resistance box), extraneous by measuring
The voltage at impedance both ends calculates the output power of collection.The a certain frequency for the use of signal generator input amplitude being 1V among experiment
The sinusoidal voltage of rate, is conveyed to piezoelectric stack ceramic actuator, amplifier multiplying power is 15 times, close to scarce by power amplifier
The girder construction end for falling into material 3 is responded by piezoelectric stack ceramic actuator excited vibrational.The integral erection figure of vibrational energy collection
Refer to Fig. 2.
It can be expressed from the next in the output power that body structure surface is gathered using PVDF：
Above formula ω is circular frequency, btIt is the width of piezoelectric, ltBe piezoelectric along the x-axis direction on length, d31It is
The piezoelectric constant of " 31 " direction, that is, X direction, Y are the Young's modulus of piezoelectric,It is averagely should in piezoelectricity area coverage
Become, CpIt is the capacitance of piezoelectric, R is external impedance.
If to obtain the output power value of maximum under a certain vibration frequency, optimal external impedance size should be at this time
R*=1/ ω Cp (2)
Using shown in obtained transmission curve such as Fig. 3 (a) of fiber grating e measurement technology experiment measurement, can clearly see
The defects of occurring in first band gap state frequency is about 615Hz.Understood according to formula (2), defect state 615Hz is corresponding optimal outer
Connecting resistance is 517.6k Ω, measurement obtain corresponding optimal output voltage and peak power output be respectively 169.4mV and
55.4nW.Finally experiment measures the corresponding maximum collection performance number of each frequency between 400Hz-1000Hz, and the result is shown in Fig. 3
(b) and Fig. 3 (c).In the case where gathering structure determination, formula (1) teaches that the output power of maximum can be with frequency
Increase and increase.And Fig. 3 shows, output voltage and power under defect state 615Hz are much larger than neighbouring frequency range (particularly
General passband resonant frequency) output voltage and power because the beam surface strain response that PVDF pastes under defect state is big, this body
The characteristic of Dimension Phononic Crystal with Defects energy localization is showed.
Claims (6)
1. the electricity energy harvester of the double localization characteristics of a kind of application phonon crystal containing defect beam, it is characterised in that including containing defect
Phonon crystal beam and piezoelectric, the phonon crystal containing defect beam are that the cycle hands in the longitudinal direction by two kinds of material cells
For the cantilever beam rearranged, the size of two of which material cell is identical, and the phonon crystal containing defect beam is close to fixed
At least one existing defects in the material cell at end, and it is described the defects of be not located at as in the material cell of fixing end, institute
The piezoelectric stated is located in the material cell of existing defects.
2. electricity energy harvester according to claim 1, it is characterised in that it is described the defects of incorporation way for reduce material
The thickness of material unit.
3. electricity energy harvester according to claim 1, it is characterised in that the Young's modulus of two kinds of material cells
More than ten times of difference.
4. electricity energy harvester according to claim 1, it is characterised in that the cycle of the cantilever beam is more than 8.
5. electricity energy harvester according to claim 1, it is characterised in that the shape of two kinds of material cells is
Rectangle.
6. a kind of energy-collecting method of claim 1 described device, it is characterised in that include the following steps：
1) according to the vibration frequency design energy harvester of working environment, the defects of making electricity energy harvester state frequency and work
The frequency of the principal vibration ripple of environment is identical；
2) by the installation of designed electricity energy harvester in the work environment, wherein one end of existing defects is as fixing end；Work
Make the vibrational energy excitation phonon crystal vibration of beam response of environment, the band gap properties of phonon crystal beam cause bandgap frequency scope
Interior corresponding elastic wave or sound wave are propagated in periodic structure and can be suppressed, so that by the energy localization of ripple close to vibration source
Front end, and the corresponding elastic wave of the defects of bandgap range state or the sound wave localization at the point defect of phonon crystal；
The maximum power that output is gathered under defect state frequency is more than other corresponding peak power outputs of passband formant, positioned at depositing
The piezoelectric layer of piezoelectric in the material cell of defect is subject to mechanical stress, and the dynamic strain of piezoelectric layer is directly defeated by electrode
Go out alternating voltage, realize the collection of energy.
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108845291A (en) * | 2018-06-12 | 2018-11-20 | 江苏大学 | A kind of underwater sound source positioning system and method based on phonon crystal sensing |
| CN111375539A (en) * | 2018-12-30 | 2020-07-07 | 南京拓步智能科技有限公司 | Phonon excitation method and control system based on multi-channel phase difference control |
| CN111953231A (en) * | 2020-08-13 | 2020-11-17 | 上海交通大学 | Adjustable frequency sound energy collection device based on phononic crystal |
| CN113113091A (en) * | 2021-03-25 | 2021-07-13 | 同济大学 | Design method of piezoelectric cantilever beam phonon crystal plate |
| CN113113092A (en) * | 2021-03-25 | 2021-07-13 | 同济大学 | Design method of variable-capacitance piezoelectric cantilever beam phononic crystal plate |
| CN113531022A (en) * | 2021-07-26 | 2021-10-22 | 天津大学 | Active control local resonance metamaterial device for low-frequency vibration isolation |
| CN115833651A (en) * | 2022-12-16 | 2023-03-21 | 南京航空航天大学 | Vibration energy collecting device based on defect topological metamaterial beam |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108845291A (en) * | 2018-06-12 | 2018-11-20 | 江苏大学 | A kind of underwater sound source positioning system and method based on phonon crystal sensing |
| CN111375539A (en) * | 2018-12-30 | 2020-07-07 | 南京拓步智能科技有限公司 | Phonon excitation method and control system based on multi-channel phase difference control |
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| CN113113091A (en) * | 2021-03-25 | 2021-07-13 | 同济大学 | Design method of piezoelectric cantilever beam phonon crystal plate |
| CN113113092A (en) * | 2021-03-25 | 2021-07-13 | 同济大学 | Design method of variable-capacitance piezoelectric cantilever beam phononic crystal plate |
| CN113113091B (en) * | 2021-03-25 | 2022-06-14 | 同济大学 | Design method of piezoelectric cantilever beam phonon crystal plate |
| CN113113092B (en) * | 2021-03-25 | 2022-11-18 | 同济大学 | Design method of variable-capacitance piezoelectric cantilever beam phononic crystal plate |
| CN113531022A (en) * | 2021-07-26 | 2021-10-22 | 天津大学 | Active control local resonance metamaterial device for low-frequency vibration isolation |
| CN115833651A (en) * | 2022-12-16 | 2023-03-21 | 南京航空航天大学 | Vibration energy collecting device based on defect topological metamaterial beam |
| CN115833651B (en) * | 2022-12-16 | 2023-11-07 | 南京航空航天大学 | Vibration energy collection device based on defect topology metamaterial beam |
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