CN107968240A - A kind of adjustable plasma photon crystal frequency-selecting filter - Google Patents

A kind of adjustable plasma photon crystal frequency-selecting filter Download PDF

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Publication number
CN107968240A
CN107968240A CN201711472734.XA CN201711472734A CN107968240A CN 107968240 A CN107968240 A CN 107968240A CN 201711472734 A CN201711472734 A CN 201711472734A CN 107968240 A CN107968240 A CN 107968240A
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interface
photon crystal
frequency
selecting filter
crystal frequency
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CN107968240B (en
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谭海云
金成刚
诸葛兰剑
吴雪梅
王钦华
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Suzhou University
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Suzhou University
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00Auxiliary devices
    • H01P1/20Frequency-selective devices, e.g. filters
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00Auxiliary devices
    • H01P1/20Frequency-selective devices, e.g. filters
    • H01P1/2005Electromagnetic photonic bandgaps [EPB], or photonic bandgaps [PBG]

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Control Of Motors That Do Not Use Commutators (AREA)

Abstract

The present invention relates to a kind of adjustable plasma photon crystal frequency-selecting filter, including supporting case, plasma producing apparatus in support case, the top and bottom of support case are respectively arranged with first interface and second interface, the inside of first interface and the inside of second interface are connected with plasma producing apparatus, the outside of first interface and second interface are connected with driving power one of externally within, another is connected to the ground, the left surface of support case is provided with rectangular waveguide, the right flank of support case is provided with photoelectric signal conversion device, photoelectric signal conversion device includes photodetector, the signal output interface being connected with photodetector.Wave filter made of plasma photon crystal of the present invention, in the range of forbidden band, filter effect is good, and the frequency content unicity of transmission is good, and actual effect and the design goodness of fit are high;Low manufacture cost;By the adjusting of plasma, adjustable arrowband frequency-selecting is realized.

Description

A kind of adjustable plasma photon crystal frequency-selecting filter
Technical field
The present invention relates to technical field of micro communication, more particularly to a kind of adjustable plasma photon crystal frequency-selective filtering Device.
Background technology
Microwave communication(Microwave Communication), it is to use electromagnetism of the wavelength between 1 millimeter to 1 meter The communication that ripple --- microwave carries out.Microwave communication can be used for the transmission of various telecommunication services since its bandwidth, capacity are big. Such as phone, telegram, data, fax and color TV can be transmitted by microwave circuit.In microwave telecommunication system, filtering Device is a kind of wavelength selecting device, briefly, exactly separates useful and garbage signal device, has in multiplexing equipment Important function.Growing with microwave communication, the resource of frequency is more and more nervous, and development wavelength-division multiplex system can fill Divide and utilize bandwidth, expand transmission capacity.In wavelength-division multiplex system, arrowband frequency-selecting filter directly affects the matter entirely to communicate Amount.In high quality communication, the wave filter of low-loss and high quality waveform response is necessary.
The development of narrow band filter:Traditional narrow band filter is often based on basic LC and RC low-pass filters And be fabricated to, the most microwave filter of application is circuit filter and waveguide filter at present:
1st, earliest wave filter is the LC wave filters invented by the U.S. and Germany scientist in 1917, belongs to circuit filter.One A simplest LC wave filters are by an inductance component L and capacitor element C is in series or in parallel forms, and basic principle is to utilize The characteristic of " the logical low frequency, hinder high frequency " of inductance component and " the logical high frequency, hinder low frequency " of capacitor element, by being carried out to them The combinations such as series and parallel are using so that combinations thereof impedance is very big or minimum to some specific frequencies, so as to play frequency choosing Select effect.By rational design, LC wave filters can show good, stable filtering performance, including larger frequency band And low insertion loss etc., it is commonly used in higher-frequency(2-4GHz)In circuit.But in practical applications, since small inductor is not allowed Easily make, and distributed constant such as influences to be difficult to estimate at the reason, general cost is high, limits widely using for it;
2nd, RC wave filters, appear in the 1970s, falling within circuit filter.Simplest RC wave filters are by loading L both ends are connected in parallel with a capacitor device C and are formed.The characteristic of capacitor element " logical high frequency, hinder low frequency " is make use of, due to being subject to frequency Limitation, be commonly used in low-frequency channel, be usually applied in combination with operational amplifier, form active filter.But due to resistance R Presence so that it cannot be used in high-current circuit, the presence of R also brings loss, plus the absolute value tolerances of element In the presence of filter effect is undesirable;
3rd, microstrip filter, with LC filter class seemingly, different is the use of element to its equivalent circuit.Microstrip filter In, the open circuit parallel connection stub that each capacitance C is 1/C with characteristic impedance replaces, and each inductance L is connected with the short circuit that characteristic impedance is L Stub replaces.By equivalent circuit and conductive material printing in the circuit board, it is fabricated to plane circuit filter.Its main feature is that The shortcomings that filter range is big, is generally weighed with GHz, but maximum is that the higher hamonic wave of its working frequency is usually present obvious void Spurious response, in addition usually also there is some unwanted couplings in microstrip filter, these are in the coupling for being designed without considering Closing often influences the frequency response of circuit reality;
4th, waveguide filter, belongs to optical filter.Waveguide filter is made of discontinuous structure and transmission line section, wherein not connecting Continuous structure offer equiva lent impedance, and transmission line section equivalent tank chamber.Often applied as bandpass filter in 0.5-10GHz ripples Section.Possess relatively low insertion loss and good passband stationary wave characteristic and higher attenuation outside a channel.The drawback is that it can not modulate;
5th, photonic bandgap filter, is a kind of Novel Filter based on photonic crystal, particularly microwave section, has belonged to step Section.The characteristics of photonic crystal is a kind of medium of artificial cycle arrangement, it is maximum is to possess " forbidden photon band ", i.e., a certain band frequency Interior electromagnetic wave can not be propagated wherein.Photonic crystal has its exclusive advantage as wave filter:It is that loss is low first, generally For, form dielectric loss all very littles of photon crystal structure.Secondly, " forbidden band " is the attribute of its own, without other circuits Filtering can be achieved in element, and this point is similar with waveguide.Further, since the presence of forbidden band, when the periodicity of photonic crystal is enough, Its signal with resistance edge will be decayed rapidly, can effective electromagnetism interference, filter effect is preferable.When introducing in the photonic crystal During point defect, photonic crystal will carry the narrow band filter of resonator as one, can be from numerous and diverse electromagnetic wave directly Pick out the electromagnetic wave of specific frequency wavelength.By rational design, it can possess very wide energy gap and good Selecting frequency characteristic, its operating frequency range can have very big extension.But traditional photon crystal filter it is maximum the shortcomings that be It can not tune, once design, except non-recombinant, otherwise its working frequency just can not be changed.There are some mechanical methods, such as humorous Shake and perturbation medium is added in chamber, change size of dielectric posts etc. and be all unfavorable for practical application, also have certain methods, for example pass through Temperature come change the refractive index of material or introduce magnetic material so that control photonic crystal forbidden band, surrounding environment can be subject to Limitation.
Traditional circuit filter belongs to digital filter, when being filtered, it is necessary first to the electricity for receiving antenna Magnetostatic wave signal is changed into electric signal by digital-to-analogue conversion, and therefore, the resolution ratio of digital-to-analogue conversion generally requires very high accuracy.Its Secondary, in electric signal domain during processing information, often there is loss greatly in circuit filter, and filter effect is with designing big, the cost that comes in and goes out The shortcomings of high.Comparatively speaking, for optical filter by directly handling optical signal, filter effect is often highly desirable, particularly gathers around There is the photon crystal filter of " forbidden band ", possess good filtering characteristic, including low, electromagnetism interference, working frequency model is lost Enclose width etc., but traditional photon crystal filter the shortcomings that often presence can not modulate.
The content of the invention
The present invention overcomes the deficiencies in the prior art, there is provided a kind of adjustable plasma photon crystal frequency-selecting filter.
To reach above-mentioned purpose, the technical solution adopted by the present invention is:A kind of adjustable plasma photon crystal frequency-selecting Wave filter, including support case, the plasma producing apparatus in the support case, the top and bottom point of the support case Be not provided with first interface and second interface, the inside of the first interface and the inside of second interface with the plasma Generating means is connected, and the outside of the first interface and second interface are connected with driving power one of externally within, separately One is connected to the ground, and the left surface of the support case is provided with rectangular waveguide, and the right flank of the support case is provided with photoelectricity Chromacoder, the signal that the photoelectric signal conversion device includes photodetector, is connected with the photodetector Output interface.
In a preferred embodiment of the present invention, a kind of adjustable plasma photon crystal frequency-selecting filter further comprises The width edge length of the rectangular waveguide is 17mm-30mm, and the narrow side length of the rectangular waveguide is 5-15mm.
In a preferred embodiment of the present invention, a kind of adjustable plasma photon crystal frequency-selecting filter further comprises The support case is in rectangular parallelepiped structure.
In a preferred embodiment of the present invention, a kind of adjustable plasma photon crystal frequency-selecting filter further comprises It is described support case size be(180-220)mm×(90-110)mm×(40-60mm).
In a preferred embodiment of the present invention, a kind of adjustable plasma photon crystal frequency-selecting filter further comprises The support case is made of aluminum alloy material.
In a preferred embodiment of the present invention, a kind of adjustable plasma photon crystal frequency-selecting filter further comprises The inner top surface and inner bottom surface of the support case are both provided with support plate, and hole array is provided with the support plate.
In a preferred embodiment of the present invention, a kind of adjustable plasma photon crystal frequency-selecting filter further comprises The thickness of the support plate is 2-4mm.
In a preferred embodiment of the present invention, a kind of adjustable plasma photon crystal frequency-selecting filter further comprises The support plate is made of acrylic or polytetrafluoroethylene (PTFE) material.
In a preferred embodiment of the present invention, a kind of adjustable plasma photon crystal frequency-selecting filter further comprises The driving power is high frequency and high voltage power supply.
The present invention solves defect present in background technology, the invention has the advantages that:
(1)Wave filter made of plasma photon crystal, in the range of forbidden band, filter effect is good, the frequency content of transmission Unicity is good, and actual effect and the design goodness of fit are high;
(2)Low manufacture cost, whole wave filter only need an inexpensive regulated power supply to power for it;
(3)By the adjusting of plasma, adjustable arrowband frequency-selecting is realized.
Brief description of the drawings
The present invention is further described with reference to the accompanying drawings and examples.
Fig. 1 is the structure diagram of the preferred embodiment of the present invention;
Fig. 2 is the top view of the preferred embodiment of the present invention;
Fig. 3 is the forbidden band figure that complete photonic crystal produces when being not introduced into plasma;
Fig. 4 is the transmissivity spectrogram of wave filter when being not introduced into plasma;
Fig. 5 be plasma dielectric constant real and imaginary parts in the case where electromagnetic wavelength is constant with plasma density Graph of a relation;
Fig. 6 is the variation diagram of wave filter frequency-selecting under different plasma density;
Fig. 7 is the frequency response curve of the wave filter reality of the preferred embodiment of the present invention.
Embodiment
Presently in connection with drawings and examples, the present invention is described in further detail, these attached drawings are simplified signal Figure, only illustrates the basic structure of the present invention in a schematic way, therefore it only shows composition related to the present invention.
As shown in Figure 1, a kind of adjustable plasma photon crystal frequency-selecting filter, including support case 10, arranged on support Plasma producing apparatus in case 10, the top and bottom of support case 10 are respectively arranged with first interface 12 and second interface 14, the inside of first interface 12 and the inside of second interface 14 are connected with plasma producing apparatus, first interface 12 It is exterior and second interface 14 one of externally within and driving power(Not shown in figure)It is connected, another is connected to the ground, The left surface of support case 10 is provided with rectangular waveguide 18, and the right flank of support case 10 is provided with photoelectric signal conversion device 20, light The signal output interface 24 that electrical signal conversion device 20 includes photodetector 22, is connected with photodetector 22.
The width edge length A of preferably rectangular waveguide 18 of the invention is 17mm-30mm, and the narrow side length B of rectangular waveguide 18 is 5- 15mm, is made of aluminium alloy, to guide TM electromagnetic wave propagations.
Preferred support case 10 of the invention is in rectangular parallelepiped structure.Support case 10 size be(180-220)mm×(90-110) mm×(40-60mm).Support case 10 is made of aluminum alloy material, for being responsible for shielding electromagnetic waves and the knot to wave filter Structure supports.The inner top surface and inner bottom surface for supporting case 10 are both provided with support plate 26, and hole array is provided with support plate 26(In figure not Show).The thickness of further preferred support plate 26 is 2-4mm.It is preferred that support plate 26 is made of acrylic material, but not office It is limited to acrylic material, or polytetrafluoroethylene (PTFE) material is made.
Preferably driving power of the invention is high frequency and high voltage power supply, and further preferred driving power is that working frequency is 20kHz, the adjustable high frequency and high voltage power supplies of voltage magnitude 0-30kV.
As shown in Fig. 2, plasma producing apparatus includes photonic crystal and plasma discharge tube, photodetector 22 is used In detection by photonic crystal filtering gained electromagnetic wave signal and be converted into electric signal, and by signal output interface 24 export to In photoamplifier circuit.Photonic crystal by a diameter of 6mm aluminium oxide ceramics rod 28(Dielectric constant is 9.4)By positive hexagonal lattice Arranged in XY faces, arrangement period a=12mm, wherein arrangement period a refer to 28 center of circle of adjacent alumina ceramic rod to the center of circle it Between distance.TM ripples(Electric field is polarized along aluminium oxide ceramics rod 28 is axial)Enter photonic crystal by rectangular waveguide 18, in light Under the action of sub- crystal, the electromagnetic wave in 6.5GHz to 10GHz will be completely blocked.One is removed in photonic crystal centre position A aluminium oxide ceramics rod 28, is put into centre position by plasma discharge tube, forms point defect, form a resonator.Deng Plasma discharge pipe includes discharge tube 30 and two electrodes being enclosed in discharge tube 30(Not shown in figure), one of electrode It is connected with the inside of first interface 12, another electrode is connected with the inside of second interface 14.In the present embodiment, first connects The outside of mouth 12 is connected with driving power, and the outside of second interface 14 is connected to the ground, and preferably discharge tube 30 is quartz ampoule(It is situated between Electric constant is 3.8), the thickness of discharge tube 30 is 1mm, internal diameter 14mm.Further preferred discharge tube 30 is using commercial low Pressure mercury lamp, model Shelley spy ZW15S15Y-Z380, is filled with a small amount of mercury and protective gas in discharge tube 30.Support plate 26 The hole array that the hole array of upper setting and multiple aluminium oxide ceramics rods 28 and discharge tube 30 are formed coordinates, easy to by multiple aluminium oxide Ceramic rod 28 and discharge tube 30 are spacing firmly.
Fig. 3 be using COMSOL software emulations obtain when being not introduced into plasma, taboo that complete photonic crystal produces Band.Fig. 4 be using COMSOL software emulations obtain when being not introduced into plasma, the transmissivity of wave filter spectrum.In Fig. 3 and Fig. 4 Emulation in, in order to simplify calculate, be applied with perfect magnetic conductor border in X-direction, i.e. X-direction aluminium oxide ceramics rod is unlimited Cycle, Y direction have 7 row aluminium oxide ceramics rods.
As seen from Figure 3, the energy gap of photonic crystal is about 6.5GHz-10GHz, its transmissivity be less than 0.05, and Band logical edge and its precipitous, the decay of signal is very fast.As seen from Figure 4, after point defect is introduced, in 8.873GHz or so There are an extremely narrow transmission peaks, its transmissivity is equal to 1, its Q value is by calculating about 3000, should if not utilizing other means Wave filter will can only obtain the signal of a frequency in the range of forbidden band, can not tune.
Driving power starts, and plasma 32 is produced in discharge tube 30.When plasma is introduced resonator, due to etc. The dispersion properties of gas ions, after plasma density is changed, trickle reduction will occur for the refractive index of medium in resonator, and Transmission peaks are caused to high-frequency mobile.Fig. 5 is the real and imaginary parts of plasma dielectric constant in the constant situation of electromagnetic wavelength Lower and plasma density graph of a relation, Fig. 6 is the variation diagram of wave filter frequency-selecting under different plasma density.
In simulations, plasma collision frequency(Imaginary part Producing reason)1GHz is arranged to, in the ripple of 6GHz-11GHz In section, the imaginary part of plasma dielectric constant is 0.005, and its small, so that not showing in Fig. 5.Can be with by Fig. 5 Find out, with the increase of plasma density, in wave filter selection frequency band, the dielectric constant of plasma will slowly subtract It is small, and cause resonant frequency to high-frequency mobile.From fig. 6, it can be seen that work as plasma density ne1 is changed to from 0 × 1011cm-3When, wherein ne=0 it is corresponding in figure be no plasma, the frequency of transmission peaks is changed to from 8.873 GHz 8.985 GHz, adjustable range reach 100MHz, in fact, by continuously adjusting plasma density, transmission peaks in theory Frequency shifts can change to 10GHz always.
Fig. 7 is the frequency response curve of the wave filter reality of the preferred embodiment of the present invention.Due to aluminium oxide ceramics rod thickness It is uneven so that the position of transmission peaks, which has, slightly moves, probably at 8.838GHz, through calculating, its Q value about 480.Prohibit Electromagnetic wave signal with place is decayed very weak, and compared with transmission peaks, signal strength is continued until well below the latter 10GHz or so just starts stronger signal occur, this meets fine with theory analysis.It is adjustable when being added at 30 both ends of discharge tube After voltage, the density of plasma takes place change and controls the position of transmission peaks, and the electric current in electric discharge passes through current probe Measure, when electric current increases to 8.13mA from 2.21mA, the position of transmission peaks is slowly moved to 8.913GHz from 8.838GHz, and And higher transmissivity and relatively narrow frequency range are always maintained at, the adjustable range of the bandwidth of 75MHz is finally realized, this is aobvious The good harmonic ability of wave filter of the present invention is shown.
The desirable embodiment according to the present invention is enlightenment above, and by above-mentioned description, related personnel completely can be with Without departing from the scope of the technological thought of the present invention', various changes and amendments are carried out.The technical scope of this invention The content being not limited on specification, it is necessary to determine the technical scope according to the scope of the claims.

Claims (9)

  1. A kind of 1. adjustable plasma photon crystal frequency-selecting filter, it is characterised in that:Including support case, arranged on the support Plasma producing apparatus in case, the top and bottom of the support case are respectively arranged with first interface and second interface, institute The inside of first interface and the inside of second interface is stated with the plasma producing apparatus to be connected, the first interface Exterior and second interface to be connected one of externally within driving power, another is connected to the ground, the left side for supporting case Side is provided with rectangular waveguide, and the right flank of the support case is provided with photoelectric signal conversion device, the photoelectric signal transformation The signal output interface that device includes photodetector, is connected with the photodetector.
  2. A kind of 2. adjustable plasma photon crystal frequency-selecting filter according to claim 1, it is characterised in that:It is described The width edge length of rectangular waveguide is 17mm-30mm, and the narrow side length of the rectangular waveguide is 5-15mm.
  3. A kind of 3. adjustable plasma photon crystal frequency-selecting filter according to claim 1, it is characterised in that:It is described It is in rectangular parallelepiped structure to support case.
  4. A kind of 4. adjustable plasma photon crystal frequency-selecting filter according to claim 3, it is characterised in that:It is described Support case size be(180-220)mm×(90-110)mm×(40-60mm).
  5. A kind of 5. adjustable plasma photon crystal frequency-selecting filter according to claim 4, it is characterised in that:It is described Support case is made of aluminum alloy material.
  6. A kind of 6. adjustable plasma photon crystal frequency-selecting filter according to claim 1, it is characterised in that:It is described The inner top surface and inner bottom surface for supporting case are both provided with support plate, and hole array is provided with the support plate.
  7. A kind of 7. adjustable plasma photon crystal frequency-selecting filter according to claim 6, it is characterised in that:It is described The thickness of support plate is 2-4mm.
  8. A kind of 8. adjustable plasma photon crystal frequency-selecting filter according to claim 6, it is characterised in that:It is described Support plate is made of acrylic or polytetrafluoroethylene (PTFE) material.
  9. A kind of 9. adjustable plasma photon crystal frequency-selecting filter according to claim 1, it is characterised in that:It is described Driving power is high frequency and high voltage power supply.
CN201711472734.XA 2017-12-29 2017-12-29 Adjustable plasma photonic crystal frequency-selecting filter Active CN107968240B (en)

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Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005317888A (en) * 2004-04-27 2005-11-10 Iljin Copper Foil Co Ltd Manufacturing method of filter for electromagnetic wave shielding
KR20090069972A (en) * 2007-12-26 2009-07-01 삼성코닝정밀유리 주식회사 Filter for display apparatus and plasma display apparatus comprising the same
CN201741777U (en) * 2010-02-26 2011-02-09 电子科技大学 Metal photonic crystal filter
CN102269842A (en) * 2011-07-18 2011-12-07 北京邮电大学 Realization method of photonic crystal micro-cavity with high-quality factor
CN103187604A (en) * 2011-07-29 2013-07-03 深圳光启高等理工研究院 Filter
CN103296343A (en) * 2012-03-01 2013-09-11 深圳光启创新技术有限公司 Filter
CN103715480A (en) * 2014-01-20 2014-04-09 吉林大学 Single-band-pass tunable microwave photonic filter with ultrahigh quality factor
CN106028614A (en) * 2016-07-28 2016-10-12 苏州大学 Device for producing continuous tunable defect mode plasma photonic crystals and method thereof

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005317888A (en) * 2004-04-27 2005-11-10 Iljin Copper Foil Co Ltd Manufacturing method of filter for electromagnetic wave shielding
KR20090069972A (en) * 2007-12-26 2009-07-01 삼성코닝정밀유리 주식회사 Filter for display apparatus and plasma display apparatus comprising the same
CN201741777U (en) * 2010-02-26 2011-02-09 电子科技大学 Metal photonic crystal filter
CN102269842A (en) * 2011-07-18 2011-12-07 北京邮电大学 Realization method of photonic crystal micro-cavity with high-quality factor
CN103187604A (en) * 2011-07-29 2013-07-03 深圳光启高等理工研究院 Filter
CN103296343A (en) * 2012-03-01 2013-09-11 深圳光启创新技术有限公司 Filter
CN103715480A (en) * 2014-01-20 2014-04-09 吉林大学 Single-band-pass tunable microwave photonic filter with ultrahigh quality factor
CN106028614A (en) * 2016-07-28 2016-10-12 苏州大学 Device for producing continuous tunable defect mode plasma photonic crystals and method thereof

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