CN107968038B - Device for improving defect conditions of HCD silicon nitride deposition process - Google Patents
Device for improving defect conditions of HCD silicon nitride deposition process Download PDFInfo
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- CN107968038B CN107968038B CN201711160388.1A CN201711160388A CN107968038B CN 107968038 B CN107968038 B CN 107968038B CN 201711160388 A CN201711160388 A CN 201711160388A CN 107968038 B CN107968038 B CN 107968038B
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- silicon nitride
- deposition process
- nitride deposition
- frame structure
- furnace tube
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
Abstract
The invention discloses a device for improving defect conditions of a HCD silicon nitride deposition process, which comprises a furnace tube and a nitrogen spraying device arranged on one side of a reaction cavity of the furnace tube, wherein a crystal boat is arranged in the furnace tube. According to the invention, the barrier net is arranged between the nitrogen spraying device and the wafer boat, so that the blown nitrogen faces to the lower part of the wafer boat, and the defects caused by the falling particles of the boat feet due to the blowing of the gas to the boat feet are avoided.
Description
Technical Field
The invention relates to the technical field of silicon nitride deposition processes, in particular to a silicon nitride deposition device.
Background
With the development of semiconductor technology, the cost of the product process and the product yield are important operation indexes while meeting the required precision of the technology.
The existing HCD silicon nitride deposition process machine usually needs a wafer boat to be loaded into a furnace tube for operation, and a nitrogen spraying device in the 3 o' clock direction of a loading area can blow particles attached to boat feet onto a product wafer to form defects, so that the yield of the product is lost.
As shown in fig. 1, as the accumulated film thickness of the tool increases, the particles attached to the boat foot also increase, and the number of defects formed on the wafer also increases, thereby reducing the yield of the product.
Disclosure of Invention
Accordingly, the present invention is directed to an apparatus for improving defect status of HCD silicon nitride deposition process.
In order to achieve the purpose, the invention adopts the technical scheme that:
the device for improving the defect condition of the HCD silicon nitride deposition process comprises a furnace tube and a nitrogen spraying device arranged on one side of a reaction cavity of the furnace tube, wherein a crystal boat is arranged in the furnace tube.
The device for improving the defect condition of the HCD silicon nitride deposition process is characterized in that the guide device is a blocking net, the blocking net comprises a frame structure fixed in the furnace tube reaction cavity and a plurality of guide blades, two ends of each guide blade are fixedly connected with the frame structure, and the lower sides of the plurality of guide blades face the lower side of the boat foot.
The device for improving the defect condition of the HCD silicon nitride deposition process is characterized in that the blocking net further comprises a plurality of guide plates, the two ends of each guide plate are fixedly connected with the frame structure, the guide plates are vertically arranged, and the lower end of each guide plate is integrally connected with the upper end of one guide blade.
The device for improving the defect condition of the HCD silicon nitride deposition process is characterized in that a plurality of guide vanes are vertically arranged.
The device for improving the defect condition of the HCD silicon nitride deposition process is characterized in that a plurality of guide vanes are parallel to each other.
The device for improving the defect condition of the HCD silicon nitride deposition process is characterized in that the frame structure is a rectangular frame.
The device for improving the defect condition of the HCD silicon nitride deposition process is characterized in that the angle between each guide blade and the frame structure is adjustable.
In the apparatus for improving the defect status of the HCD silicon nitride deposition process, each of the guide vanes is rotatably connected to the frame structure through a rotating shaft.
Due to the adoption of the technology, compared with the prior art, the invention has the following positive effects:
(1) according to the invention, the barrier net is arranged between the nitrogen spraying device and the wafer boat, so that the blown nitrogen faces to the lower part of the wafer boat, and the defects caused by the falling particles of the boat feet due to the blowing of the gas to the boat feet are avoided.
Drawings
FIG. 1 is a schematic view of wafer defect accumulation for an apparatus for improving defect status in HCD silicon nitride deposition process according to the present invention.
FIG. 2 is a schematic diagram of an apparatus for improving defect status during HCD silicon nitride deposition process according to the present invention.
Figure 3 is a front view of a barrier web of an apparatus of the present invention for ameliorating the defect conditions during a HCD silicon nitride deposition process.
Figure 4 is a side view of a barrier web of an apparatus of the present invention for improving defect status during HCD silicon nitride deposition process.
In the drawings: 1. a furnace tube; 11. a reaction chamber; 12. a heat exchanger; 2. a nitrogen spraying device; 3. a wafer boat; 4. a barrier net; 41. a frame structure; 42. a guide blade; 43. a baffle.
Detailed Description
The invention is further described with reference to the following drawings and specific examples, which are not intended to be limiting.
Fig. 2 is a schematic diagram of an apparatus for improving defect status of HCD silicon nitride deposition process according to the present invention, fig. 3 is a front view of a barrier net of the apparatus for improving defect status of HCD silicon nitride deposition process according to the present invention, fig. 4 is a side view of the barrier net of the apparatus for improving defect status of HCD silicon nitride deposition process according to the present invention, please refer to fig. 2 to 4, which illustrate an apparatus for improving defect status of HCD silicon nitride deposition process according to a preferred embodiment, comprising a furnace tube 1 and a nitrogen gas spraying apparatus 2 disposed at one side of a reaction chamber 11 of the furnace tube 1, wherein a boat 3 is disposed in the furnace tube 1, a guiding apparatus is disposed between the nitrogen gas spraying apparatus 2 and the boat 3, and the guiding apparatus enables the blowing direction of nitrogen gas blown by the nitrogen gas spraying apparatus 2 to face to the lower part of a boat foot of the boat 3.
In addition, as a preferred embodiment, the guiding device is a blocking net 4, the blocking net 4 includes a frame structure 41 fixed in the reaction chamber 11 of the furnace tube 1 and a plurality of guiding blades 42 having two ends fixedly connected to the frame structure 41, and the lower sides of the guiding blades 42 face the lower side of the boat foot, so as to prevent the blowing nitrogen from blowing the boat foot of the wafer boat 3, which causes the particles on the boat foot to be blown down onto the product wafer to form defects, thereby achieving the effects of improving the particle condition of the machine and increasing the yield of the product.
In addition, as a preferred embodiment, the blocking net 4 further includes a plurality of guide plates 43 having two ends fixedly connected to the frame structure 41, the guide plates 43 are vertically disposed, and the lower end of each guide plate 43 is integrally connected to the upper end of a guide vane 42. The nitrogen gas blown out from the nitrogen gas shower device 2 is blocked by the guide plate 43 and moves downward, and is blown to the lower side of the boat foot of the wafer boat 3 by being guided in the obliquely downward direction by the guide blade 42.
On the other hand, as a preferred embodiment, the nitrogen gas blown out from the nitrogen gas spraying device 2 passes through the guide plate 43 and the guide plate from the lower part of the boat 3, then is blown out from the other side of the reaction chamber 11, then is cooled by the heat exchanger 12 disposed below the reaction chamber 11, and finally returns to the gas inlet of the nitrogen gas spraying device 2 for circulation.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the scope and the implementation manner of the present invention.
The present invention also has the following embodiments in addition to the above:
in a further embodiment of the invention, in order to adapt to different heights of the reaction chamber and the setting height of the boat, the guide vanes 42 and the guide plates 43 of the blocking net 4 are rotatably and hermetically connected through a rotating shaft and used for adjusting the angle between the guide vanes 42 and the vertical guide plates 43, so that the wind direction of the blown nitrogen is adjusted to ensure that the boat feet are not purged.
In a further embodiment of the present invention, a gear is disposed at one end of the rotating shaft of each guide vane 42, and the plurality of guide vanes 42 are synchronously driven by a gear belt, so as to simultaneously adjust the angles of the plurality of guide vanes 42.
In a further embodiment of the present invention, and with continued reference to fig. 2-4, a plurality of guide vanes 42 are vertically aligned.
In a further embodiment of the invention, a plurality of guide vanes 42 are parallel to each other.
In a further embodiment of the present invention, the frame structure 41 of the blocking net 4 is a rectangular frame, and in addition, the frame structure 41 may also be in a circular shape, an oval shape, or other shapes according to the actual situations such as the shape of the furnace tube.
In a further embodiment of the present invention, the material, size, length, etc. of the barrier net 4 may be specifically selected according to the actual situation.
In a further embodiment of the present invention, a plurality of barrier nets 4 may be disposed on the wall of the reaction chamber 11 in the same furnace tube 1.
While the invention has been described with reference to a preferred embodiment, it will be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the spirit and scope of the invention.
Claims (8)
1. The device for improving the defect condition of the HCD silicon nitride deposition process comprises a furnace tube and a nitrogen spraying device arranged on one side of a reaction cavity of the furnace tube, wherein a crystal boat is arranged in the furnace tube.
2. The apparatus of claim 1, wherein the guiding device is a barrier net, the barrier net comprises a frame structure fixed in the reaction chamber of the furnace tube and a plurality of guiding blades with two ends fixedly connected to the frame structure, and the lower sides of the guiding blades face the lower side of the boat foot.
3. The apparatus of claim 2, wherein said barrier screen further comprises a plurality of baffles having opposite ends fixedly connected to said frame structure, said plurality of baffles being vertically disposed, and a lower end of each of said plurality of baffles being integrally connected to an upper end of a said guide vane.
4. An apparatus for ameliorating defect conditions during an HCD silicon nitride deposition process as claimed in claim 2 wherein said plurality of guide vanes are vertically aligned.
5. An apparatus for ameliorating the defect status of an HCD silicon nitride deposition process as claimed in claim 2 wherein said guide vanes are parallel to each other.
6. The apparatus of claim 2, wherein the frame structure is a rectangular frame.
7. An apparatus for ameliorating defect status of HCD silicon nitride deposition process as claimed in claim 2 wherein the angle between each of said guide vanes and said frame structure is adjustable.
8. An apparatus for ameliorating defect status in an HCD silicon nitride deposition process as claimed in claim 7 wherein each of said guide vanes is rotatably connected to said frame structure by a shaft.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711160388.1A CN107968038B (en) | 2017-11-20 | 2017-11-20 | Device for improving defect conditions of HCD silicon nitride deposition process |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711160388.1A CN107968038B (en) | 2017-11-20 | 2017-11-20 | Device for improving defect conditions of HCD silicon nitride deposition process |
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| CN107968038A CN107968038A (en) | 2018-04-27 |
| CN107968038B true CN107968038B (en) | 2020-01-21 |
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| CN201711160388.1A Active CN107968038B (en) | 2017-11-20 | 2017-11-20 | Device for improving defect conditions of HCD silicon nitride deposition process |
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Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103184434A (en) * | 2011-12-31 | 2013-07-03 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Tray apparatus, tray and semiconductor processing apparatus |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH0693434B2 (en) * | 1987-08-18 | 1994-11-16 | 日本電気株式会社 | Vapor phase growth equipment |
| JPH05335247A (en) * | 1992-05-27 | 1993-12-17 | Nec Kansai Ltd | Semiconductor manufacturing device |
| US7731797B2 (en) * | 2004-11-01 | 2010-06-08 | Hitachi Kokusai Electric Inc. | Substrate treating apparatus and semiconductor device manufacturing method |
| JP5529634B2 (en) * | 2010-06-10 | 2014-06-25 | 株式会社日立国際電気 | Substrate processing apparatus, semiconductor device manufacturing method, and substrate manufacturing method |
| JP2013161924A (en) * | 2012-02-03 | 2013-08-19 | Tokyo Electron Ltd | Purge device and purge method of substrate storage container |
| CN105689330B (en) * | 2016-03-29 | 2018-08-28 | 上海华力微电子有限公司 | A kind of device and method improving boiler tube cassette support leg particle situation |
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Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103184434A (en) * | 2011-12-31 | 2013-07-03 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Tray apparatus, tray and semiconductor processing apparatus |
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| CN107968038A (en) | 2018-04-27 |
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