CN107959109A

CN107959109A - The integrated high-gain aerial of silicon substrate and aerial array

Info

Publication number: CN107959109A
Application number: CN201711074093.2A
Authority: CN
Inventors: 杨驾鹏; 周骏; 周大利; 沈亚
Original assignee: CETC 55 Research Institute
Current assignee: CETC 55 Research Institute
Priority date: 2017-11-05
Filing date: 2017-11-05
Publication date: 2018-04-24

Abstract

The invention discloses a kind of integrated high-gain aerial of silicon substrate and aerial array, antenna includes silicon based substrate and glass substrate, and silicon based substrate and glass substrate are bonded by Micro-package technique, form the resonant cavity of antenna；The obverse and reverse of the silicon based substrate includes multilayer wiring, and multiple silicon based metal vias are set inside silicon based substrate, for being grounded, radiating and microwave signal vertical transfer；Antenna patch is set on glass substrate.The present invention uses high resistant silicon substrate board structure, can realize tow sides multilayer wiring, be easily integrated all kinds of passive and active components；Not only in millimeter wave frequency band excellent performance, while there is ultra-thin, high-gain and be easily integrated.

Description

The integrated high-gain aerial of silicon substrate and aerial array

Technical field

The present invention relates to silicon substrate radio frequency microsystems technology, is particularly a kind of integrated high-gain aerial of silicon substrate and antenna Array.

Background technology

In recent years, as the direction of active phased array component towards slimming, high frequency, multifunction is developed, to improving The demand of level of integrated system is more and more urgent, one of them important research direction is the integrated day in system encapsulation Line.

Traditional encapsulation is generally basede on multi-layer substrate and is developed, and multi-layer substrate is mainly thick-film technique, line Width is mm magnitudes, and integrated level is limited be subject to larger.Thin-film technique multilager base plate using silicon substrate as representative can improve integrated Degree, but the dielectric constant of silicon substrate and dielectric loss can limit the gain of integrated antenna.

From the foregoing, it will be observed that problem existing in the prior art includes two aspects：When it is how antenna integrated in encapsulation, second, How encapsulation in antenna integrated gain is improved.

The content of the invention

It is an object of the invention to provide a kind of integrated high-gain aerial of silicon substrate and aerial array, not only in millimeter Wave frequency section excellent performance, while there is ultra-thin, high-gain and be easily integrated.

The technical solution for realizing the object of the invention is：A kind of integrated high-gain aerial of silicon substrate, including silicon substrate base Plate and glass substrate, silicon based substrate and glass substrate are integrated by Micro-package technique, form the resonant cavity of antenna；The silicon substrate The obverse and reverse of substrate includes multilayer wiring, and multiple silicon based metal vias are set inside silicon based substrate, for being grounded, radiate and Microwave signal vertical transfer, sets antenna patch on glass substrate.

A kind of integrated high-gain aerial array of silicon substrate, multiple silicon substrate high-gain aerials are extended to aerial array.

Compared with prior art, the present invention its remarkable advantage is：

(1) present invention uses high resistant silicon substrate board structure, can realize tow sides multilayer wiring, be easily integrated all kinds of nothings The active component in source；(2) present invention is processed using microelectronic films technique, and machining accuracy is up to micron dimension, precision height, With excellent high frequency performance；(3) present invention realizes the assembling of silicon substrate and glass substrate using microwave assembly technology, reduces antenna Dielectric permittivity, improves radiance；(4) present invention can be formed tile type encapsulation, have it is ultra-thin, minimize and be easy to The characteristics of arch.

Brief description of the drawings

Fig. 1 is the integrated high-gain aerial layered stereoscopic schematic diagram of silicon substrate of the present invention.

Fig. 2 is the integrated high-gain aerial structure chart of silicon substrate.

Fig. 3 is glass substrate schematic diagram.

Fig. 4 is silicon based substrate schematic diagram.

Fig. 5 is the aerial array schematic diagram of the present invention.

Embodiment

With reference to Fig. 1, Fig. 2 and Fig. 3, a kind of integrated high-gain aerial of silicon substrate, including silicon based substrate 1, glass base Plate 3, silicon based substrate 1 and glass substrate 3 are bonded by Micro-package technique, form the resonant cavity 4 of antenna；The silicon based substrate 1 Obverse and reverse include multilayer wiring, antenna patch is set on glass substrate 3, and the inside of silicon based substrate 1 sets multiple silicon substrates gold Belong to via, for being grounded, radiating and microwave signal vertical transfer.

Further, the front of silicon based substrate 1 integrates active passive device, and reverse side forms antenna feeding network, silicon based metal Via forms signal vertical transfer passage, as shown in Figure 4.

Further, silicon based substrate 1 uses high resistant silicon substrate, and resistivity is more than or equal to 1000 Ω cm.

Further, the dielectric constant of glass substrate 3 is 3-6；The thickness of glass substrate 3 is 50-500um.

Further, organic bond 2, including MD130, GD414 are used in Micro-package technique；2 thickness of organic bond For 10-100um.

Further, 1 surface of silicon based substrate carries out the isolation and surface passivation between metal layer using multilayered medium material Medium is protected, the dielectric constant of medium is 2-4.

The present invention also provides a kind of aerial array of the high-gain aerial integrated based on the silicon substrate, multiple silicon substrates High-gain aerial is extended to aerial array, as shown in Figure 5.The antenna of the present invention can be with used aloned, can also be according to not limiting An aerial array is extended in diagramatic way.

With reference to embodiment, the present invention is described in detail.

Embodiment

Integrated high-gain aerial in a kind of silicon based package, including realize passive integration and the silicon substrate as carrier Substrate 1, and realize the glass with low dielectric constant substrate 3 of antenna patch, silicon based substrate 1 and glass substrate 3 pass through microwave assembly technology It is integrated, form the resonant cavity 4 of antenna；There is multilayer wiring in 1 front of silicon based substrate, and reverse side has multilayer wiring, glass substrate 3 It is upper to include one layer of metallic pattern, form antenna patch.

1 surface of silicon based substrate is blunt using the isolation between the dielectric material progress metal layer of multilayer low dielectric constant and surface Change protection, 1 surface of silicon based substrate utilizes all kinds of passive structures of multilayer technique design, such as transmission line, feeding network, silicon substrate Crucial portions of the multiple silicon based metal via TSV of substrate internal production as ground connection, heat dissipation channel and microwave signal vertical transfer Divide, radiofrequency signal is guided to the back side of silicon substrate by TSV vertical transfers structure, the feed structure of antenna is arranged on silicon substrate backboard Face.

Claims

A kind of 1. integrated high-gain aerial of silicon substrate, it is characterised in that including silicon based substrate (1) and glass substrate (3), Silicon based substrate (1) and glass substrate (3) are integrated by Micro-package technique, form the resonant cavity of antenna；The silicon based substrate (1) Obverse and reverse include multilayer wiring, multiple silicon based metal vias are set inside silicon based substrate (1), for being grounded, radiate and Microwave signal vertical transfer, glass substrate set antenna patch on (3).
2. the integrated high-gain aerial of silicon substrate according to claim 1, it is characterised in that silicon based substrate (1) is just Face integrates active passive device, and reverse side forms antenna feeding network, and silicon based metal via forms signal vertical transfer passage.
3. the integrated high-gain aerial of silicon substrate according to claim 2, it is characterised in that silicon based substrate (1) is adopted With high resistant silicon substrate, resistivity is more than or equal to 1000 Ω cm.
4. the integrated high-gain aerial of silicon substrate according to claim 1, it is characterised in that glass substrate (3) Dielectric constant is 3-6.
5. the integrated high-gain aerial of silicon substrate according to claim 4, it is characterised in that glass substrate (3) Thickness is 50-500um.
6. the integrated high-gain aerial of silicon substrate according to claim 1, it is characterised in that using microwave assembly technology Glass substrate (3) is bonded to silicon based substrate (1) surface, microwave assembly technology uses organic bond (2).
7. the integrated high-gain aerial of silicon substrate according to claim 6, it is characterised in that organic bond (2) Thickness is 10-100um.
8. the integrated high-gain aerial of silicon substrate according to claim 1, it is characterised in that silicon based substrate (1) table Face carries out the isolation and surface passivation protection between metal layer using multilayered medium material.
9. the integrated high-gain aerial of silicon substrate according to claim 8, it is characterised in that silicon based substrate (1) table The dielectric constant of face medium is 2-4.
10. a kind of aerial array of the high-gain aerial integrated based on silicon substrate described in claim 1-9 any one, its It is characterized in that, multiple high-gain aerials are extended to aerial array.