CN107953034A - The processing method of adhesive substrates - Google Patents
The processing method of adhesive substrates Download PDFInfo
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- CN107953034A CN107953034A CN201710939218.7A CN201710939218A CN107953034A CN 107953034 A CN107953034 A CN 107953034A CN 201710939218 A CN201710939218 A CN 201710939218A CN 107953034 A CN107953034 A CN 107953034A
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- substrate
- adhesive substrates
- preset lines
- workbench
- segmentation preset
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- 239000000758 substrate Substances 0.000 title claims abstract description 193
- 239000000853 adhesive Substances 0.000 title claims abstract description 69
- 230000001070 adhesive effect Effects 0.000 title claims abstract description 69
- 238000003672 processing method Methods 0.000 title claims abstract description 18
- 230000011218 segmentation Effects 0.000 claims abstract description 68
- 238000003754 machining Methods 0.000 claims abstract description 19
- 230000035699 permeability Effects 0.000 claims abstract description 15
- 239000010410 layer Substances 0.000 description 43
- 230000004048 modification Effects 0.000 description 37
- 238000012986 modification Methods 0.000 description 37
- 238000005286 illumination Methods 0.000 description 18
- 239000002346 layers by function Substances 0.000 description 8
- 239000004973 liquid crystal related substance Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 230000008859 change Effects 0.000 description 6
- 239000010409 thin film Substances 0.000 description 4
- 238000010276 construction Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000005361 soda-lime glass Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000007514 turning Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/70—Auxiliary operations or equipment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
- H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Laser Beam Processing (AREA)
- Liquid Crystal (AREA)
- Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
- Dicing (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The processing method for providing adhesive substrates, suppresses relatively low, and efficiency is good by the possibility of adhesive substrates breakage.The processing method of the adhesive substrates includes the steps:Step is loaded, adhesive substrates are placed in and keeps on workbench and exposes second substrate side;And laser machining process, it is irradiated from first substrate side along segmentation preset lines via workbench is kept in the way of making for keeping first substrate possessed by the adhesive substrates on workbench and keeping workbench that there is the first laser beam of the wavelength of permeability to be focused at the inside of first substrate, and is irradiated in the way of the inside for making the second substrate for adhesive substrates that there is the second laser beam of the wavelength of permeability to be focused at second substrate from second substrate side along segmentation preset lines.
Description
Technical field
The present invention relates to the processing method of adhesive substrates, which forms the fitting of multiple substrates.
Background technology
Liquid crystal display device used has liquid crystal panel in monitor of electronic equipment etc., which is to be formed
It is useful for TFT (the Thin Film Transistor of driving liquid crystal:Thin film transistor (TFT)) array base palte and formed with colour filter
Filter substrate fitting form.The sealing formed by resin etc. is provided between array base palte and filter substrate
Part, liquid crystal are enclosed the region surrounded by the seal member.
Such as make to be divided into the first mother substrate of multiple array base paltes by using seal member and to be divided into multiple
The second mother substrate fitting of filter substrate, then by the substrate (hereinafter referred to as adhesive substrates) after fitting along defined segmentation
Preset lines are split and obtain above-mentioned liquid crystal panel.The segmentation of adhesive substrates is typically employed in the first mother substrate and second
Mother substrate carries out (for example, referring to patent documents 1) such as the methods of after-applied pressure of scribing processing.
Patent document 1:Japanese Unexamined Patent Publication 2015-114546 publications
But in the above-mentioned methods, after scribing processing has been carried out to a side of the first mother substrate and the second mother substrate,
In order to carry out scribing processing, it is necessary to invert the positive and negative of adhesive substrates to the opposing party.Therefore, the inefficient of operation, in addition instead
Damaged possibility occurs for adhesive substrates also high when turning.
The content of the invention
The present invention be in view of the problem and complete, its purpose is to provide the processing method of adhesive substrates, will be bonded base
The possibility of plate breakage suppresses relatively low, and efficiency is good.
A mode according to the present invention, there is provided the processing method of adhesive substrates, the adhesive substrates have first substrate and
The second substrate being fitted on the first substrate, and a plurality of segmentation preset lines are provided with, the processing method of the adhesive substrates
It is characterized in that there is the steps:Step is loaded, which is placed in and is kept on workbench, makes the second substrate
Expose side;And laser machining process, according to making for first base possessed by the adhesive substrates on the holding workbench
Plate and the holding workbench have the first laser beam of the wavelength of permeability be focused at the first substrate inside mode via
The holding workbench and be irradiated from the first substrate side along the segmentation preset lines, and according to making for the adhesive substrates
The second substrate have permeability wavelength second laser beam be focused at the second substrate inside mode from this second
Substrate-side is irradiated along the segmentation preset lines.
In one embodiment of the present invention, preferably also there is following segmentation step:Implementing the laser machining process
Afterwards, the first substrate and the second substrate are split along the segmentation preset lines.
, will in the way of exposing by second substrate side in the processing method of the adhesive substrates of one embodiment of the present invention
After adhesive substrates are placed on holding workbench, according to the wavelength for making there is permeability for first substrate and holding workbench
The first laser beam inside that is focused at first substrate mode it is pre- from first substrate side along segmentation via workbench is kept
Alignment is irradiated, and is focused at second substrate according to the second laser beam for the wavelength for making to have permeability for second substrate
The mode of inside be irradiated from second substrate side along segmentation preset lines, therefore the positive and negative of adhesive substrates need not be made anti-
Turn, it becomes possible to first substrate and second substrate are processed along segmentation preset lines.That is, a mode according to the present invention,
It is capable of providing the processing method of the good adhesive substrates of the efficiency for suppressing relatively low by the possibility of adhesive substrates breakage.
Brief description of the drawings
(A) of Fig. 1 is the sectional view for illustrating to load step, and (B) of Fig. 1 is the office for illustrating laser machining process
Portion's sectional side view, (C) of Fig. 1 are the sectional views for illustrating segmentation step.
(A) and (B) of Fig. 2 is the side elevation in partial section for illustrating the laser machining process of variation.
Label declaration
11:Adhesive substrates;13:First substrate (the first mother substrate);13a:First face (front);13b:Second face (the back of the body
Face);15:Second substrate (the second mother substrate);15a:First face (front);15b:Second face (back side);17:First functional layer;
19:Second functional layer;21:Seal member;23:Gap;25a:First modification layer;25b:Second modification layer;25c:3rd modification
Layer;L1:First laser beam;L2:Second laser beam;2:Laser processing device;4:Keep workbench;4a:Retaining surface;6:First swashs
Light irradiation unit;8:Second laser illumination unit.
Embodiment
Referring to the drawings, the embodiment of one embodiment of the present invention is illustrated.The adhesive substrates of present embodiment
Processing method is used such as when in display panel manufacturing liquid crystal panel, this method include mounting step (with reference to Fig. 1 (A)),
Laser machining process (with reference to (B) of Fig. 1) and segmentation step (with reference to (C) of Fig. 1).
In step is loaded, according to the adhesive substrates for making there is the second substrate of first substrate and fitting on the first substrate
The mode exposed of the lateral top of second substrate adhesive substrates be placed in keep on workbench.That is, according to by adhesive substrates
Adhesive substrates are placed in by the state of first substrate side towards the upper surface side for keeping workbench to be kept on workbench.
In laser machining process, make the first laser for first substrate and the wavelength for keeping workbench that there is permeability
Beam is irradiated from first substrate side along segmentation preset lines via holding workbench and it is focused in first substrate
Portion, so as to be modified to first substrate.In addition, the second laser beam for the wavelength for making to have permeability for second substrate is from the
The inside that two substrate-sides are irradiated along segmentation preset lines and make it be focused at second substrate, so as to change to second substrate
Matter.
In segmentation step, to first substrate and second substrate applying power and along the segmentation preset lines being upgraded to patch
Substrate is closed to be split.Hereinafter, the processing method of the adhesive substrates of present embodiment is described in detail.
In the processing method of the adhesive substrates of present embodiment, mounting step is carried out first, adhesive substrates are placed in
Keep on workbench.(A) of Fig. 1 is the sectional view for illustrating to load step.As shown in (A) of Fig. 1, added by present embodiment
The adhesive substrates 11 of work include first substrate (the first mother substrate) 13 and second substrate (the second mother substrate) 15.
First substrate 13 is formed as tabular such as the material as soda-lime glass, alkali-free glass, quartz glass, for visible
Light is almost transparent.It is provided with the first face (front) 13a of the first substrate 13 comprising for liquid crystal applied voltages
TFT (Thin Film Transistor:Thin film transistor (TFT)), pixel electrode, the first functional layer 17 including wiring etc..Separately
Outside, the structure for the first functional layer 17, forming method etc. are not particularly limited.
Second substrate 15 is also formed in the same manner as first substrate 13.That is, second substrate 15 by soda-lime glass, alkali-free glass,
The materials such as quartz glass are formed as tabular, are almost transparent for visible ray.But first substrate 13 and second substrate 15
Need not be identical.Being provided with to include on the first face (front) 15a of the second substrate 15 makes from backlight radiation (not shown)
The colour filter that selectively passes through of light of any wavelength etc. including the second functional layer 19.Structure for the second functional layer 19,
Forming method etc. is also not particularly limited.
First face 13a sides of first substrate 13 and the first face 15a sides of second substrate 15 are close by being formed by resin etc.
Envelope component 21 is bonded.Seal member 21 has defined thickness, so that in the first face 13a sides and second of first substrate 13
Formed with gap between first face 15a sides of substrate 15.What is surrounded by first substrate 13, second substrate 15 and seal member 21
Liquid crystal is for example enclosed in gap 23.It is set with the adhesive substrates 11 for adhesive substrates 11 to be divided into multiple display panels
Deng segmentation preset lines 11a.
Mounting step is for example carried out using the laser processing device 2 shown in (A) of Fig. 1.Laser processing device 2, which has, to be used for
The holding workbench 4 adhesive substrates 11 are attracted, kept.Workbench 4 is kept for example by the material same with first substrate 13
Matter is formed to the size supported to the entirety of adhesive substrates 11.
The rotary driving source such as with motor of holding workbench 4 is (not shown) to be linked, around substantially flat with vertical
Capable rotation axis rotation.In addition, keeping the lower section of workbench 4 to be provided with moving mechanism (not shown), workbench 4 is kept to utilize
The moving mechanism moves in the horizontal direction.
A part for the upper surface of workbench 4 is kept as the retaining surface 4a kept to adhesive substrates 11.Keeping
A part (such as the part at end) of face 4a is for example formed with opening (not shown), and the opening is by being arranged at holding workbench
Attraction road (not shown) of 4 inside etc. and with attract source (not shown) be connected.If adhesive substrates 11 are placed in retaining surface 4a
And the suction function in source will be attracted in opening, then can be using keeping workbench 4 to be attracted adhesive substrates 11, kept.
In step is loaded, make the second face (back side) the 13b sides of first substrate 13 of composition adhesive substrates 11 with keeping work
The retaining surface 4a for making platform 4 is contacted and is acted on the negative pressure in attraction source.Thus, adhesive substrates 11 are with the second face (back of the body of second substrate 15
Face) state exposed of the lateral tops of 15b is held in and keeps on workbench 4.
After step is loaded, laser machining process is carried out, laser beam is irradiated and adhesive substrates 11 is processed.Fig. 1
(B) be side elevation in partial section for illustrating laser machining process.Laser machining process continues with laser processing device 2
Carry out.
As shown in (B) of Fig. 1, first laser illumination unit 6 is configured with keeping the lower section of workbench 4.In addition, keeping
The top of workbench 4 is configured with second laser illumination unit 8 with 6 corresponding position of first laser illumination unit.
First laser illumination unit 6 has the first lens (not shown) of optically focused, (will not schemed by first laser oscillator
Show) impulse hunting go out first laser beam L1 irradiation, converge to defined position.Gather in addition, second laser illumination unit 8 has
The second lens (not shown) of light, will be shone by the second laser beam L2 that second laser oscillator (not shown) impulse hunting goes out
Penetrate, converge to defined position.
First laser oscillator is configured to impulse hunting and goes out for keeping workbench 4 and first substrate 13 to have transmission
The first laser beam L1 of the wavelength (being not easy absorbed wavelength) of property.Shake in addition, second laser oscillator is configured to pulse
Swing the second laser beam L2 for the wavelength (being not easy absorbed wavelength) that there is permeability for second substrate 15.
In laser machining process, holding workbench 4 moved, rotated first, such as make a reservation in the segmentation as object
By the aligned in position of first laser illumination unit 6 and second laser illumination unit 8 on the extended line of line 11a.Then, while from
One laser beam irradiation unit 6 and second laser illumination unit 8 irradiate first laser beam L1 and second laser beam L2 while relative to
Holding workbench 4 is moved on direction parallel the segmentation preset lines 11a of object.
More specifically, first laser beam L1 is made to make a reservation for via workbench 4 is kept from 13 side of first substrate along segmentation
Line 11a is irradiated, and it is focused at the inside of first substrate 13.As the lens of the optically focused of first laser illumination unit 6,
Such as use the lens that numerical aperture (NA) is 0.8 or so.In this way, pass through the wavelength for making there is permeability for first substrate 13
First laser beam L1 be focused at the inside of first substrate 13, can be as shown in (B) of Fig. 1 to the inside of first substrate 13
Modified and form the first modification layer 25a of the starting point as segmentation.
Similarly, second laser beam L2 is irradiated from 15 side of second substrate along segmentation preset lines 11a, make its convergence
In the inside of second substrate 15.It is as the lens of the optically focused of second laser illumination unit 8, such as using numerical aperture (NA)
0.8 or so lens.In this way, it is focused at the by the second laser beam L2 for the wavelength for making there is permeability for second substrate 15
The inside of two substrates 15, can modify the inside of second substrate 15 as shown in (B) of Fig. 1 and be formed as segmentation
Starting point the second modification layer 25b.
The first modification layer 25a and second is formed along all segmentation preset lines 11a when being repeated above-mentioned action
When modifying layer 25b, laser machining process terminates.Alternatively, it is also possible to be formed to each segmentation preset lines 11a in the different position of depth
Multiple first modification layer 25a and the second modification layer 25b.
After laser machining process, carry out segmentation step, to first substrate 13 and 15 applying power of second substrate and along
Segmentation preset lines 11a formed with the first modification layer 25a and the second modification layer 25b splits adhesive substrates 11.Fig. 1's
(C) it is sectional view for illustrating segmentation step.Segmentation step is carried out using arbitrary segmenting device is (not shown).
If such as pressurizeed using components such as rollers to adhesive substrates 11, can by first modification layer 25a and second change
Adhesive substrates 11 are divided into multiple panels 31 by matter layer 25b as the starting point of segmentation along segmentation preset lines 11a.When along institute
When some segmentation preset lines 11a split adhesive substrates 11, segmentation step terminates.
As described above, in the processing method of the adhesive substrates of present embodiment, what is exposed according to 15 side of second substrate
Mode by adhesive substrates 11 be placed in keep workbench 4 on after, according to make for first substrate 13 and keep workbench 4 have
The first laser beam L1 of the wavelength of permeability be focused at the mode of the inside of first substrate 13 via keep workbench 4 and from first
13 side of substrate is irradiated along segmentation preset lines 11a, in addition, according to the wavelength for making to have permeability for second substrate 15
The mode that second laser beam L2 is focused at the inside of second substrate 15 is shone from 15 side of second substrate along segmentation preset lines 11a
Penetrate, therefore need not invert the positive and negative of adhesive substrates 11, it becomes possible to along segmentation preset lines 11a to first substrate 13 and second
Substrate 15 is split.
That is, adhesive substrates 11 will not be damaged because of the reversion of positive and negative, therefore the damaged possibility of adhesive substrates 11 is pressed down
It is made relatively low.In addition, need not invert the positive and negative of adhesive substrates 11, therefore compared with the situation with needing to invert, can be efficient
Ground is split by adhesive substrates 11.
In addition, first laser beam L1 and second laser are irradiated to first substrate 13 and second substrate 15 according to same opportunity
Beam L2, so as to uniformly form the modification layers of the first modification layer 25a and second 25b according to same opportunity.Thus, with it is right successively
First substrate 13 carries out situation of scribing processing etc. with second substrate 15 and compares, and efficiently adhesive substrates 11 can be divided
Cut.
In addition, the invention is not restricted to the record of the above embodiment, it can make various changes and implement.For example, also may be used
To set the segmentation preset lines different from segmentation preset lines 11a on adhesive substrates 11.(A) of Fig. 2 and (B) of Fig. 2 are to be used for
Illustrate the side elevation in partial section of the laser machining process of variation.
As shown in (A) of Fig. 2 and (B) of Fig. 2, it is set with the adhesive substrates 11 of variation and segmentation preset lines 11a
Different segmentation preset lines 11b.Segmentation preset lines 11b is for example only set on second substrate 15, so as to make the first base
Expose in the region of a part for first face 13a sides of plate 13.
In the laser machining process of variation, such as shown in (A) of Fig. 2, shone along the segmentation preset lines 11a of object
First laser beam L1 and second laser beam L2 are penetrated, so as to form the modification layers of the first modification layer 25a and second 25b.First is formed to change
The process of the modification layers of matter layer 25a and second 25b etc. is identical with the above embodiment.
After the segmentation preset lines 11a along object forms the first modification layer 25a and the second modification layer 25b, make holding
Workbench 4 is moved, rotated, such as by the extended line of the adjacent segmentation preset lines 11b of the segmentation preset lines 11a with object
The aligned in position of one laser beam irradiation unit 6 and second laser illumination unit 8.Then, while being irradiated from second laser illumination unit 8
Second laser beam L2 being moved up relative to the parallel sides of segmentation preset lines 11b while keep workbench 4.
At this time, first laser beam L1 is not irradiated from first laser illumination unit 6.Thus, as shown in (B) of Fig. 2, along point
Cut preset lines 11b to modify the inside of second substrate 15, so as to form the 3rd of the starting point as segmentation the modification layer
25c.After the 3rd modification layer 25c is formd along segmentation preset lines 11b, along adjacent segmentation preset lines 11a into one
Step forms the first modification layer 25a and the second modification layer 25b.
When above-mentioned action is repeated, forms the first modification layer 25a and second along all segmentation preset lines 11a and change
Matter layer 25b and along all segmentation preset lines 11b form the 3rd modification layer 25c when, laser machining process terminates.In addition,
Multiple first modification layer 25a and the second modification layer 25b can be formed in the different position of depth to each segmentation preset lines 11a.Separately
Outside, multiple 3rd modification layer 25c can also be formed in the different position of depth to each segmentation preset lines 11b.
In addition, in above-mentioned variation, the first modification layer 25a and the second modification layer 25b have been initially formed, but can also first shape
Into the 3rd modification layer 25c.Alternatively, it is also possible to change along all the first modification of segmentation preset lines 11a formation layer 25a and second
Matter layer 25b and then form the 3rd modification layer 25c along each segmentation preset lines 11b.It is equally possible that along all
Split preset lines 11b to form the 3rd modification layer 25c and then form the first modification layer 25a and the along each segmentation preset lines 11a
Two modification layer 25b.
In addition, in the above embodiment etc., by adhesive substrates 11 in the way of the lateral top of second substrate 15 is exposed
It is placed in and keeps on workbench 4, but can also loads adhesive substrates 11 in the way of the lateral top of first substrate 13 is exposed
In on holding workbench 4.The difference of first substrate 13 and second substrate 15, the first functional layer 17 and the first functional layer 19 etc. is only
It is that for convenience of description, their relation can be replaced arbitrarily.
In addition, such as the laser machining process by the above embodiment, first is formd along segmentation preset lines 11a
The modification layers of layer 25a and second 25b (in variation, the 3rd modification layer 25c is formd also along segmentation preset lines 11b) is modified,
But it can also be formed along segmentation preset lines 11a by pore and be referred to as shield tunnel round what the amorphous regions of the pore were formed
The construction in road etc..In this case basic process etc. is identical with the above embodiment etc..
But in this case, as the lens of the optically focused of first laser illumination unit 6, use numerical aperture (NA)
Divided by the obtained value of refractive index of first substrate 13 is 0.05~0.2 lens.Similarly, as second laser illumination unit
The lens of 8 optically focused, are 0.05~0.2 using the obtained value of the refractive index of numerical aperture (NA) divided by second substrate 15
Lens.Formed thereby, it is possible to the segmentation preset lines 11a (segmentation preset lines 11b) along adhesive substrates 11 and be referred to as shield tunnel
Deng construction.
In addition, in the above embodiment etc., by making the movement of holding workbench 4 be processed adhesive substrates 11,
But adhesive substrates 11 can also be added by making first laser illumination unit 6, second laser illumination unit 8 etc. mobile
Work.
In addition, the construction of the above embodiment, method etc., then can be with without departing from the scope of the purpose of the present invention
Suitably change and implement.
Claims (2)
1. a kind of processing method of adhesive substrates, which has first substrate and be fitted on the first substrate second
Substrate, and a plurality of segmentation preset lines are provided with, the processing method of the adhesive substrates is characterized in that, has the steps:
Step is loaded, which is placed in and is kept on workbench, exposes the second substrate side;And
Laser machining process, according to making for the first substrate possessed by the adhesive substrates on the holding workbench and the guarantor
The mode for the inside that there is workbench the first laser beam of the wavelength of permeability to be focused at the first substrate is held via the holding work
Make platform and be irradiated from the first substrate side along the segmentation preset lines, and according to make for the adhesive substrates this second
Substrate have the second laser beam of the wavelength of permeability be focused at the second substrate inside mode from the second substrate side edge
The segmentation preset lines to be irradiated.
2. the processing method of adhesive substrates according to claim 1, it is characterised in that
The processing method of the adhesive substrates also has following segmentation step:After the laser machining process is implemented, along
The segmentation preset lines split the first substrate and the second substrate.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP2016-203072 | 2016-10-14 | ||
JP2016203072A JP2018063407A (en) | 2016-10-14 | 2016-10-14 | Method of processing bonded substrate |
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Publication Number | Publication Date |
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CN107953034A true CN107953034A (en) | 2018-04-24 |
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CN201710939218.7A Pending CN107953034A (en) | 2016-10-14 | 2017-10-11 | The processing method of adhesive substrates |
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JP (1) | JP2018063407A (en) |
KR (1) | KR20180041588A (en) |
CN (1) | CN107953034A (en) |
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JP7047922B2 (en) * | 2018-09-04 | 2022-04-05 | 株式会社村田製作所 | Manufacturing method of MEMS device and MEMS device |
Citations (9)
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JP2008194720A (en) * | 2007-02-13 | 2008-08-28 | Seiko Epson Corp | Division method of mother composite substrate, laser beam machining method and manufacturing method of electooptical apparatus |
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JP3870696B2 (en) * | 2000-12-15 | 2007-01-24 | セイコーエプソン株式会社 | Manufacturing method of liquid crystal device |
KR20110067525A (en) * | 2009-12-14 | 2011-06-22 | 엘지디스플레이 주식회사 | Apparatus for fabricating flat panel display |
JP4945835B1 (en) * | 2010-11-16 | 2012-06-06 | 株式会社東京精密 | Laser dicing apparatus and method, cleaving apparatus and method, and wafer processing method |
JP5860217B2 (en) * | 2011-03-04 | 2016-02-16 | 株式会社ディスコ | Laser processing equipment |
KR20160064297A (en) * | 2014-11-27 | 2016-06-08 | 삼성디스플레이 주식회사 | Manufacturing method of display panel and display panel manufactured by the method |
JP6514028B2 (en) * | 2015-05-15 | 2019-05-15 | 平田機工株式会社 | Cutting method and cutting device |
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JP2001179473A (en) * | 1999-12-24 | 2001-07-03 | Semiconductor Energy Lab Co Ltd | Laser beam device, method of cutting substrate by using laser beam, and method of manufacturing semiconductor device |
JP2003034545A (en) * | 2001-07-18 | 2003-02-07 | Seiko Epson Corp | Laser cutting device and method used for the same, method for cutting electroptical panel |
JP2008194720A (en) * | 2007-02-13 | 2008-08-28 | Seiko Epson Corp | Division method of mother composite substrate, laser beam machining method and manufacturing method of electooptical apparatus |
JP2009172626A (en) * | 2008-01-23 | 2009-08-06 | Seiko Epson Corp | Manufacturing method of electrooptical device and electrooptical device |
WO2013115353A1 (en) * | 2012-02-01 | 2013-08-08 | 信越ポリマー株式会社 | Substrate and substrate processing method |
US20140202742A1 (en) * | 2013-01-22 | 2014-07-24 | Cambrios Technologies Corporation | Two-sided laser patterning on thin film substrates |
CN104339090A (en) * | 2013-08-06 | 2015-02-11 | 株式会社迪思科 | Optical device wafer processing method |
CN105269159A (en) * | 2014-06-02 | 2016-01-27 | 株式会社迪思科 | Chip manufacturing method |
CN105834579A (en) * | 2015-02-02 | 2016-08-10 | 株式会社迪思科 | Method of processing single-crystal member |
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