CN107920430A - Bury the processing technology of thermistor semiconductor circuits plate - Google Patents
Bury the processing technology of thermistor semiconductor circuits plate Download PDFInfo
- Publication number
- CN107920430A CN107920430A CN201711128765.3A CN201711128765A CN107920430A CN 107920430 A CN107920430 A CN 107920430A CN 201711128765 A CN201711128765 A CN 201711128765A CN 107920430 A CN107920430 A CN 107920430A
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- China
- Prior art keywords
- copper
- core plate
- copper foil
- thermistor
- foil layer
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4602—Manufacturing multilayer circuits characterized by a special circuit board as base or central core whereon additional circuit layers are built or additional circuit boards are laminated
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10007—Types of components
- H05K2201/10022—Non-printed resistor
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Thermistors And Varistors (AREA)
Abstract
The invention discloses a kind of processing technology for burying thermistor semiconductor circuits plate, first the position of thermistor semiconductor as required is welded on the core plate for having carried out figure, then the light core plate of the good groove position of prior gong and PP and copper foil laminar structure are stacked and carry out first time pressing.Progress first time laser HDI punching and copper plating of sinking on substrate are being pressed for the first time.The making of the circuit of the second layer is carried out on the substrate that the plating of heavy copper is completed and is pressed for the second time, then carries out the making of first layer and the 4th layer of circuit and later process.The wiring board obtained using the circuit board machining process for burying thermistor semiconductor, both there is the electric property of wiring board, there is the thermistor of high reliability high stability again, the favorable comment of client is commercially won, particularly present smart mobile phone market demand is very big, has very high economic benefit and social benefit.
Description
Technical field
The present invention relates to a kind of processing technology for burying thermistor semiconductor circuits plate.
Background technology
Thermal resistor, i.e. high molecular polymer positive-temperature-coefficient device (abbreviation PTC devices, Polymeric
The abbreviation of Positive Temperature Coefficient), the device can it is excessive in current surge, when temperature is excessive to electricity
Road shields.In use, being concatenated in circuit, under normal circumstances, its resistance value very little, is lost also very little, not shadow
Ring circuit normal work；If but thering is overcurrent to occur (such as short circuit), its temperature rise, its resistance value drastically raises therewith, reaches limit
The effect of electric current processed, avoids the component in damage circuit.After troubleshooting, the temperature of PPTC devices declines automatically, and extensive
Low resistive state is arrived again, therefore PPTC devices are also known as recoverability fuse.
The operation principle of thermal resistor is：Resettable fuse is made of high molecular material addition conducting particles, its
Basic principle is a kind of balance of energy, and heat is produced when electric current flows through element, and a caused heat part is dispersed into ring
In border, a part adds the temperature of high molecular material.Under operating current, the heat of generation and the heat distributed reach flat
Weighing electric current can be normal through, when super-high-current by when, element produces substantial amounts of heat and cannot timely send out, and causes height
Molecular material temperature rises, and when temperature reaches material crystalline melt temperature, high molecular material gathers expansion, blocks by conductive particle
Molecular conductive path, causes resistance to rise rapidly, limits high current by so as to play overcurrent protection.
Thermistor also can be used as electronic component to be used for the compensation of instrument line temperature and reference junction temperature benefit
Repay.Automatic growth control can be realized from thermal characteristics, form RC oscillator fixed amplitude circuits, deferred telegram using NTC thermistor
Road and protection circuit.When self-heating temperature is much larger than environment temperature, resistance value is also related with the radiating condition of environment, therefore in flow velocity
Dedicated detecting element often is made using this characteristic of thermistor in meter, flowmeter, gas analyzer, analysis of thermal conductivity.PTC
Thermistor be mainly used for the overtemperature protection of electrical equipment, contactless relay, constant temperature, automatic growth control, electric motor starting, when
Between delay, color TV autodegauss, fire alarm and temperature-compensating etc..Thermistor has widely applied to ours
In each production field, escort in industry-by-industry for our safety.
The characteristic of thermistor be exactly it can it is excessive in current surge, shield to circuit when temperature is excessive.So
Extensive utilization has been obtained in various electric appliances now, Samsung mobile phone particularly for the previous period and Iphon mobile phones it is quick-fried in succession
Fried is even more the explosive growth for having triggered this product, and it is first how preferably to protect all kinds of Electrical Appliances Designings teacher using thermistor
The thing to be considered, but the processing technology of thermistor semiconductor circuits plate is buried at present, due to wiring board and thermistor thickness
Difference, there is the defects of making is difficult, and efficiency is low, of high cost in and the impedance problems of wiring board in itself.
The content of the invention
In order to overcome drawbacks described above, the present invention provides a kind of processing technology for burying thermistor semiconductor circuits plate, no
Only manufacturing process is simple, and efficient, stable and reliable product quality.
The present invention in order to solve its technical problem used by technical solution be：
A kind of processing technology for burying thermistor semiconductor circuits plate, comprises the following steps：
Step 1, heat-sensitive semiconductive, double-side copper core plate are prepared, without bronzing core plate and the first prepreg, the two-sided copper core
The one side that plate pre-sets heat-sensitive semiconductive is internal layer, its opposite another side is outer layer, in the internal layer of the double-side copper core plate
Made on copper on the position that heat-sensitive semiconductive is corresponded on line pattern, and the no bronzing core plate and the first prepreg respectively
Gong cans be compared to the big groove of the heat-sensitive semiconductive shape；
Step 2, the heat-sensitive semiconductive is welded in the inner line figure of the double-side copper core plate, it is then good with gong
First prepreg of groove, stack gradually without copper core plate and the second prepreg and the 3rd copper foil, and carries out for the first time
Pressing, obtains the first semi-finished product；
Step 3, the punching of first time laser HDI is carried out on the 3rd copper foil layer of first semi-finished product and the copper that sinks is electroplated,
Turned on will be realized between the heat-sensitive semiconductive and the 3rd copper foil layer；
Step 4, the line pattern on the 3rd copper foil layer is made；
Step 5, the 3rd prepreg and the 4th copper foil layer are sequentially placed below the 3rd copper foil layer, and carries out second
Secondary pressing, obtains the second semi-finished product；
Step 6, carried out respectively on the 4th copper foil layer of second semi-finished product and the outer layer copper of the double-side copper core plate
Second of laser HDI punching and copper plating of sinking, by the 3rd copper foil layer and the 4th copper foil layer, and the heat-sensitive semiconductive
Conducting is realized with the outer layer copper of double-side copper core plate, is carried out at the same time mechanical holes drilled through, and each layers of copper between plate is interconnected；
Step 7, the layers of copper of the second semi-finished product outermost both sides is made into line pattern respectively, thermistor half is buried in acquisition
Conductor line board finished product.
As a further improvement on the present invention, after the step 6, prepreg and copper foil layer can also be pressed again successively, then
Line pattern is made respectively, and obtain more layers buries thermistor semiconductor circuits plate.
As a further improvement on the present invention, in the step 5, first carry out brown processing and carry out second of pressing again.
The beneficial effects of the invention are as follows：The processing technology for burying thermistor semiconductor circuits plate is solved by second pressing
The making that certainly impedance operator of the difference and wiring board of wiring board and thermistor thickness in itself is brought is difficult；Pass through secondary HDI
The method that is combined with through hole solves the electric interconnection of each interlayer；Using first weld press afterwards by the way of come solve by hand fill out member
The low efficiency problem that part is brought.
Brief description of the drawings
Fig. 1 is schematic structural view of the invention.
Embodiment
With reference to attached drawing, elaborate to the present invention, but protection scope of the present invention is not limited to following embodiments, i.e., in every case
The simple equivalent changes and modifications made with scope of the present invention patent and description, is all still belonged to patent of the present invention and contained
Within the scope of lid.
Refering to Fig. 1, a kind of processing technology for burying thermistor semiconductor circuits plate, comprises the following steps：
Step 1, heat-sensitive semiconductive 1, double-side copper core plate 2 are prepared, without 3 and first prepreg 4 of bronzing core plate, it is described two-sided
The one side that copper core plate pre-sets heat-sensitive semiconductive is internal layer, its opposite another side is outer layer, in the double-side copper core plate
Made on internal layer copper on the position that heat-sensitive semiconductive is corresponded on line pattern, and the no bronzing core plate and the first prepreg
Gong cans be compared to the big groove 5 of the heat-sensitive semiconductive shape respectively；
Step 2, the heat-sensitive semiconductive is welded in the inner line figure of the double-side copper core plate, it is then good with gong
First prepreg of groove, stack gradually without copper core plate and the second prepreg 6 and the 3rd copper foil 7, and carries out first
Secondary pressing, obtains the first semi-finished product；
Step 3, first time laser HDI punching 8 and the plating of heavy copper are carried out on the 3rd copper foil layer of first semi-finished product,
Turned on will be realized between the heat-sensitive semiconductive and the 3rd copper foil layer；
Step 4, the line pattern on the 3rd copper foil layer is made；
Step 5, the 3rd prepreg 9 and the 4th copper foil layer 10, Ran Houjin are sequentially placed below the 3rd copper foil layer
The processing of row brown, and carry out second and press, obtain the second semi-finished product；
Step 6, carried out respectively on the 4th copper foil layer of second semi-finished product and the outer layer copper of the double-side copper core plate
Second of laser HDI punching 11 and the plating of heavy copper, the 3rd copper foil layer and the 4th copper foil layer, and the temperature-sensitive are partly led
The outer layer copper of body and double-side copper core plate realizes conducting, is carried out at the same time mechanical holes drilled through 12, and each layers of copper between plate is interconnected；
Step 7, the layers of copper of the second semi-finished product outermost both sides is made into line pattern respectively, thermistor half is buried in acquisition
Conductor line board finished product.
Wherein, after the step 6, prepreg and copper foil layer can also be pressed again successively, then make line pattern respectively,
Obtain more layers buries thermistor semiconductor circuits plate.
This buries the processing technology of thermistor semiconductor circuits plate, solves wiring board and temperature-sensitive by second pressing first
The making that the impedance operator of the difference and wiring board of resistance thickness in itself is brought is difficult；Secondly, mutually tied with through hole by secondary HDI
The method of conjunction solves the electric interconnection of each interlayer；Thirdly, using first weld press afterwards by the way of come solve by hand fill out element
The low efficiency problem brought.
In conclusion the wiring board obtained using the circuit board machining process for burying thermistor semiconductor, was both had
The electric property of wiring board, and there is the thermistor of high reliability high stability, commercially win client's
Favorable comment, particularly present smart mobile phone market demand is very big, has very high economic benefit and social benefit.
Claims (3)
1. a kind of processing technology for burying thermistor semiconductor circuits plate, it is characterised in that comprise the following steps：
Step 1, heat-sensitive semiconductive, double-side copper core plate, pre- without bronzing core plate and the first prepreg, the double-side copper core plate is prepared
The one side for setting heat-sensitive semiconductive is internal layer, its opposite another side is outer layer, on the internal layer copper of the double-side copper core plate
Make and correspond to that gong is distinguished on the position of heat-sensitive semiconductive is good on line pattern, and the no bronzing core plate and the first prepreg
The groove bigger than the heat-sensitive semiconductive shape；
Step 2, the heat-sensitive semiconductive is welded in the inner line figure of the double-side copper core plate, then with the good groove of gong
First prepreg, stack gradually without copper core plate and the second prepreg and the 3rd copper foil, and carries out first time pressing,
Obtain the first semi-finished product；
Step 3, the punching of first time laser HDI is carried out on the 3rd copper foil layer of first semi-finished product and the copper that sinks is electroplated, will
Conducting is realized between the heat-sensitive semiconductive and the 3rd copper foil layer；
Step 4, the line pattern on the 3rd copper foil layer is made；
Step 5, the 3rd prepreg and the 4th copper foil layer are sequentially placed below the 3rd copper foil layer, and carries out second and presses
Close, obtain the second semi-finished product；
Step 6, second is carried out respectively on the 4th copper foil layer of second semi-finished product and the outer layer copper of the double-side copper core plate
Secondary laser HDI punching and copper plating of sinking, will the 3rd copper foil layer and the 4th copper foil layer, and the heat-sensitive semiconductive and pair
The outer layer copper of face copper core plate realizes conducting, is carried out at the same time mechanical holes drilled through, and each layers of copper between plate is interconnected；
Step 7, the layers of copper of the second semi-finished product outermost both sides is made into line pattern respectively, thermistor semiconductor is buried in acquisition
Circuit board finished product.
2. the processing technology according to claim 1 for burying thermistor semiconductor circuits plate, it is characterised in that：The step
After 6, prepreg and copper foil layer being pressed again successively, then making line pattern respectively, the thermistor that buries for obtaining more layers is partly led
Body wiring board.
3. the processing technology according to claim 1 for burying thermistor semiconductor circuits plate, it is characterised in that：The step
In 5, first carry out brown processing and carry out second of pressing again.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711128765.3A CN107920430A (en) | 2017-11-15 | 2017-11-15 | Bury the processing technology of thermistor semiconductor circuits plate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711128765.3A CN107920430A (en) | 2017-11-15 | 2017-11-15 | Bury the processing technology of thermistor semiconductor circuits plate |
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| Publication Number | Publication Date |
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| CN107920430A true CN107920430A (en) | 2018-04-17 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711128765.3A Pending CN107920430A (en) | 2017-11-15 | 2017-11-15 | Bury the processing technology of thermistor semiconductor circuits plate |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108419361A (en) * | 2018-05-15 | 2018-08-17 | 景旺电子科技(龙川)有限公司 | Bury copper billet printed circuit board and preparation method thereof |
| CN108617090A (en) * | 2018-05-14 | 2018-10-02 | 维沃移动通信有限公司 | Mobile terminal and its circuit board |
| CN113891582A (en) * | 2021-09-26 | 2022-01-04 | 东莞康源电子有限公司 | Novel method for processing embedded chip carrier plate |
| CN114999754A (en) * | 2021-03-01 | 2022-09-02 | 天芯互联科技有限公司 | Thermistor manufacturing method and thermistor |
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| CN201717256U (en) * | 2010-05-20 | 2011-01-19 | 深南电路有限公司 | Passive device and circuit board embedded with same |
| CN102256450A (en) * | 2010-05-20 | 2011-11-23 | 深南电路有限公司 | Embedded circuit board of passive device and manufacturing method thereof |
| KR20110131043A (en) * | 2010-05-28 | 2011-12-06 | 엘지이노텍 주식회사 | Embedded pcb and manufacturing method of the same |
| CN103781277A (en) * | 2012-10-24 | 2014-05-07 | 昆山华扬电子有限公司 | PCB circuit board structure and manufacturing technology thereof |
| CN107222972A (en) * | 2017-06-14 | 2017-09-29 | 鹤山市中富兴业电路有限公司 | A kind of PCB construction and its manufacture craft for being embedded with passive device |
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Patent Citations (5)
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| CN201717256U (en) * | 2010-05-20 | 2011-01-19 | 深南电路有限公司 | Passive device and circuit board embedded with same |
| CN102256450A (en) * | 2010-05-20 | 2011-11-23 | 深南电路有限公司 | Embedded circuit board of passive device and manufacturing method thereof |
| KR20110131043A (en) * | 2010-05-28 | 2011-12-06 | 엘지이노텍 주식회사 | Embedded pcb and manufacturing method of the same |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108617090A (en) * | 2018-05-14 | 2018-10-02 | 维沃移动通信有限公司 | Mobile terminal and its circuit board |
| CN108419361A (en) * | 2018-05-15 | 2018-08-17 | 景旺电子科技(龙川)有限公司 | Bury copper billet printed circuit board and preparation method thereof |
| CN114999754A (en) * | 2021-03-01 | 2022-09-02 | 天芯互联科技有限公司 | Thermistor manufacturing method and thermistor |
| CN114999754B (en) * | 2021-03-01 | 2023-06-02 | 天芯互联科技有限公司 | Manufacturing method of thermistor and thermistor |
| CN113891582A (en) * | 2021-09-26 | 2022-01-04 | 东莞康源电子有限公司 | Novel method for processing embedded chip carrier plate |
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Application publication date: 20180417 |
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