CN107917892B - Terahertz wave high-resolution imaging device - Google Patents
Terahertz wave high-resolution imaging device Download PDFInfo
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- CN107917892B CN107917892B CN201711132023.8A CN201711132023A CN107917892B CN 107917892 B CN107917892 B CN 107917892B CN 201711132023 A CN201711132023 A CN 201711132023A CN 107917892 B CN107917892 B CN 107917892B
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- 238000003384 imaging method Methods 0.000 title claims abstract description 47
- 150000001340 alkali metals Chemical group 0.000 claims abstract description 32
- 230000008878 coupling Effects 0.000 claims abstract description 22
- 238000010168 coupling process Methods 0.000 claims abstract description 22
- 238000005859 coupling reaction Methods 0.000 claims abstract description 22
- 238000012545 processing Methods 0.000 claims abstract description 20
- 230000005281 excited state Effects 0.000 claims description 52
- 230000002269 spontaneous effect Effects 0.000 claims description 21
- 229910052783 alkali metal Inorganic materials 0.000 claims description 18
- 230000005284 excitation Effects 0.000 claims description 18
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 claims description 9
- 230000009471 action Effects 0.000 claims description 7
- 239000007789 gas Substances 0.000 claims description 7
- 230000003287 optical effect Effects 0.000 claims description 6
- 229910052792 caesium Inorganic materials 0.000 claims description 4
- 230000005283 ground state Effects 0.000 claims description 4
- 230000005855 radiation Effects 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical group [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 3
- 239000011261 inert gas Substances 0.000 claims description 3
- 229910052700 potassium Inorganic materials 0.000 claims description 3
- 239000011591 potassium Substances 0.000 claims description 3
- 229910052701 rubidium Inorganic materials 0.000 claims description 3
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 claims description 3
- 230000005622 photoelectricity Effects 0.000 abstract description 2
- 238000005259 measurement Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000000799 fluorescence microscopy Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3581—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared light; using Terahertz radiation
- G01N21/3586—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared light; using Terahertz radiation by Terahertz time domain spectroscopy [THz-TDS]
Abstract
The invention provides a high-resolution imaging device for terahertz waves, belongs to the technical field of photoelectricity, and aims to provide the high-resolution imaging device for the terahertz waves to realize imaging of the terahertz waves. The high-resolution imaging device for the terahertz waves comprises an imaging array, a replaceable narrow-band filter, a CCD (charge coupled device) image sensor and an image processing system, wherein the imaging array comprises a plurality of imaging units, and each imaging unit consists of an atomic vapor pool, a first exciting light coupling system and a second exciting light coupling system; the atom vapor pool in each imaging unit is filled with alkali metal atoms and buffer gas, and the first exciting light coupling system and the second exciting light coupling system are respectively arranged at two ends of the atom vapor pool; the replaceable narrow-band filter is arranged behind the imaging array; the input end of the CCD image sensor is connected with the replaceable narrowband filter, and the output end of the CCD image sensor is connected with the input end of the image processing system.
Description
Technical Field
The invention relates to the technical field of photoelectricity, in particular to a high-resolution imaging device for terahertz waves.
Background
Terahertz (THz) waves refer to THz electromagnetic wave radiation with a frequency of 0.1-10, and the wavelength range of the THz electromagnetic wave radiation is 0.03-3 mm, which is between radio waves and light waves. Terahertz waves have the technical characteristics of strong penetrability, high use safety, good directionality, high bandwidth and the like, and can be applied to various fields such as national defense, national and local safety, astronomy, medical treatment, scientific research and the like, so the terahertz waves become an extremely important leading-edge technology in the field of international physical research. Imaging using terahertz waves is an emerging technology, and has been widely applied to various fields such as security, biology, medicine, astronomy, and space technologies. Therefore, how to realize terahertz wave imaging is a general concern in various social circles.
Disclosure of Invention
The invention aims to provide a high-resolution imaging device for terahertz waves, which is used for realizing imaging of the terahertz waves.
In order to solve the technical problems, the invention adopts the technical scheme that:
a terahertz wave high-resolution imaging device comprises an imaging array, a replaceable narrow-band filter, a CCD image sensor and an image processing system, wherein the imaging array comprises a plurality of imaging units, and each imaging unit consists of an atomic vapor pool, a first exciting light coupling system and a second exciting light coupling system; the atom vapor pool in each imaging unit is filled with alkali metal atoms and buffer gas, and the first exciting light coupling system and the second exciting light coupling system are respectively arranged at two ends of the atom vapor pool; the replaceable narrow-band filter is arranged behind the imaging array; the input end of the CCD image sensor is connected with the replaceable narrowband filter, and the output end of the CCD image sensor is connected with the input end of the image processing system;
the alkali metal atoms in the atom vapor pool jump from a ground state to a first excited state under the action of first exciting light generated by a first exciting light coupling system; then, the frequency of the second excitation light generated by the second excitation light coupling system is adjusted to make the alkali metal atom transit from the first excited state to a designated intermediate state, the designated intermediate state is an intermediate excited state between the first excited state and the second excited state, and the relationship between the energies of the second excited state and the first excited state satisfies
Wherein the content of the first and second substances,
representing Planck constant, v the frequency of the second excitation light, Δ the detuning of the excitation light, E1Denotes the energy of the alkali metal atom in a first excited state, E2Represents the energy of the alkali metal atom in the second excited state; the detected terahertz wave is vertically emitted to a photosensitive surface of the atomic vapor pool, alkali metal atoms are transferred from a designated intermediate state to a third excited state under the action of the detected terahertz wave and form atomic population in the third excited state, wherein the alkali metal atoms are in the relationship between the energy of the second excited state and the third excited state, the frequency of the detected terahertz wave and the detuning of exciting lightSatisfy the requirement of
vTRepresenting the frequency of the terahertz wave to be measured, E3Represents the energy of the alkali metal atom in the third excited state; atoms in a third excitation state generate spontaneous emission light with multiple frequencies during spontaneous emission, the spontaneous emission light enters a CCD image sensor after being selected by a replaceable narrow-band filter, an optical signal of the selected spontaneous emission light is converted into an electric signal by the CCD image sensor, and the electric signal is input into an image processing system and imaged by the image processing system; and determining the intensity of the terahertz wave according to the fluorescence intensity output by the imaging of the image processing system, wherein the frequency of the selected spontaneous emission light is the frequency of the detected terahertz wave.
Optionally, the alkali metal atom is potassium, rubidium or cesium.
Optionally, the buffer gas is an inert gas.
Optionally, the atomic vapor pool is an optical waveguide type atomic vapor pool.
The invention has the beneficial effects that:
the terahertz field on-line rapid measurement device is composed of an imaging array, a replaceable narrow-band filter, a CCD image sensor and an image processing system, and can realize on-line rapid measurement on the terahertz field. The self-calibration of terahertz wave measurement can be realized by converting a terahertz field into a fluorescent signal with visible light wavelength, combining a color image obtained by a high-resolution digital CCD image sensor and acquiring light intensity signals with different frequencies for comparison. In addition, the device can obtain the detection of a single photon magnitude by replacing a high-sensitivity digital CCD, thereby greatly expanding the sensitivity of terahertz wave measurement and being applied to various fields needing terahertz wave imaging.
Drawings
Fig. 1 is a schematic side view of the present invention.
Fig. 2 is a schematic front view of the present invention.
Fig. 3 is an exemplary illustration of an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples.
As shown in fig. 1 and fig. 2, the high-resolution imaging device for terahertz waves in the present embodiment includes an imaging array including a plurality of imaging units, each of which is composed of an atomic vapor cell 1, a first excitation-light coupling system 5, and a second excitation-light coupling system 6, a replaceable narrowband filter 2, a CCD image sensor 3, and an image processing system 4; the atom steam pool 1 in each imaging unit is filled with alkali metal atoms and buffer gas, and the buffer gas is used for slowing down collision among the alkali metal atoms; the first exciting light coupling system 5 and the second exciting light coupling system 6 are respectively arranged at two ends of the atomic vapor cell 1; the replaceable narrow-band filter 2 is arranged behind the imaging array; the input end of the CCD image sensor 3 is connected with the replaceable narrowband filter 2, and the output end of the CCD image sensor 3 is connected with the input end of the image processing system 4;
the alkali metal atoms in the atom vapor pool 1 are transited from a ground state to a first excited state under the action of first exciting light generated by a first exciting light coupling system 5; then, the frequency of the second excitation light generated by the second excitation light coupling system 6 is adjusted to make the alkali metal atom transit from the first excited state to a designated intermediate state, the designated intermediate state is an intermediate excited state between the first excited state and the second excited state, and the relationship between the energies of the second excited state and the first excited state satisfies
Wherein the content of the first and second substances,
representing Planck constant, v the frequency of the second excitation light, Δ the detuning of the excitation light, E1Denotes the energy of the alkali metal atom in a first excited state, E2Represents the energy of the alkali metal atom in the second excited state; the terahertz wave to be detected is vertically emitted to the photosensitive surface of the atomic vapor pool, and the alkali metal atoms are transferred from the designated intermediate state to the third excited state under the action of the terahertz wave to be detected, andforming an atomic population in a third excited state, wherein the relationship among the energies of the alkali metal atoms in the second and third excited states, the frequency of the terahertz wave to be measured, and the detuning of the excitation light satisfies
vTRepresenting the frequency of the terahertz wave to be measured, E3Represents the energy of the alkali metal atom in the third excited state; atoms in a third excitation state generate spontaneous emission light with multiple frequencies during spontaneous emission, the spontaneous emission light enters the CCD image sensor 3 after being selected by the replaceable narrow-band filter 2, and after optical signals of the selected spontaneous emission light are converted into electric signals by the CCD image sensor 3, the electric signals are input into the image processing system 4 and imaged by the image processing system 4; and determining the intensity of the terahertz wave according to the fluorescence intensity output by the imaging of the image processing system 4, wherein the frequency of the selected spontaneous emission light is the frequency of the terahertz wave to be detected. Wherein the energy of the alkali metal atom in the specified intermediate state is E2-E1-Δ。
Preferably, the alkali metal atom is potassium, rubidium or cesium.
Wherein the buffer gas is inert gas, such as helium, argon, etc.
Among them, the atomic vapor cell 1 in the present invention is preferably a waveguide type atomic vapor cell. Because the size of the waveguide type atomic vapor pool is small, better spatial resolution can be formed.
By arranging the replaceable narrowband filter 2, the filtering of background light can be realized, and in addition, as the narrowband filter 2 is replaceable, the replaceable narrowband filter 2 is replaced in the device, and the terahertz waves to be detected with multiple frequencies can be selected and measured. The space distribution characteristics of the terahertz waves can be obtained by arranging the imaging array.
For convenience of understanding, a specific example will be given below to illustrate a high-resolution imaging apparatus for terahertz waves provided by the present invention.
As shown in FIG. 3, the alkali metal atom in this example is a cesium atom, and the apparatus is now describedIn line imaging, the first excitation light is used to convert the ground state cesium atoms in the atomic vapor cell 1 from 6S1/2Excited to a first excited state 6P3/2(ii) a Then, the frequency of the second excitation light is adjusted to make cesium atoms from the first excited state 6P3/2Transition to a designated intermediate state X, designated as being intermediate to the first excited state 6P3/2And a second excited state nD5/2An intermediate excited state in between, a second excited state nD of cesium atoms5/2With its first excited state 6P3/2Has a larger detuning delta of the exciting light to ensure that the alkali metal atom is in the second excited state nD5/2There is no atomic population. At the moment, when the terahertz wave to be detected is vertically incident to the photosensitive surface of the atomic vapor cell, the cesium atoms are shifted from the designated intermediate state X to a third excited state (n-1) P under the action of the terahertz field to be detected3/2Transferring and forming a third excited state (n-1) P3/2Atomic population of states. When the cesium atoms generate spontaneous emission, spontaneous emission light of a plurality of frequencies is generated, and the approximate range of the frequencies of the spontaneous emission light is depicted in fig. 3, so that visible light of a plurality of colors may be generated. After the spontaneous emission light can be selected by the replaceable narrowband filter 2 and enters the CCD image sensor 3, the optical signal of the selected spontaneous emission light is converted into an electrical signal, and the signal can be imaged by the image processing system 4. By changing the replaceable narrow-band filter 2, fluorescence imaging with different wavelengths can be obtained, i.e. terahertz waves with a plurality of different wavelengths (frequencies) can be measured. According to the terahertz field intensity self-calibration method, the self-calibration of the measured data such as the terahertz field intensity and the frequency can be realized by comparing the imaging intensities of the spontaneous radiation lights with different wavelengths on the image processing system 4.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
Claims (3)
1. The high-resolution imaging device for the terahertz waves is characterized by comprising an imaging array, a replaceable narrow-band filter (2), a CCD (charge coupled device) image sensor (3) and an image processing system (4), wherein the imaging array comprises a plurality of imaging units, and each imaging unit consists of an atomic vapor cell (1), a first exciting light coupling system (5) and a second exciting light coupling system (6); an atom vapor pool (1) in each imaging unit is filled with alkali metal atoms and buffer gas, a first exciting light coupling system (5) and a second exciting light coupling system (6) are respectively arranged at two ends of the atom vapor pool (1), and the atom vapor pool (1) is an optical waveguide type atom vapor pool; the replaceable narrow-band filter (2) is arranged behind the imaging array; the input end of the CCD image sensor (3) is connected with the replaceable narrowband filter (2), and the output end of the CCD image sensor (3) is connected with the input end of the image processing system (4);
the alkali metal atoms in the atom vapor pool (1) are transited from a ground state to a first excited state under the action of first exciting light generated by a first exciting light coupling system (5); then, the frequency of the second excitation light generated by the second excitation light coupling system (6) is adjusted to make the alkali metal atom transit from the first excited state to a designated intermediate state, the designated intermediate state is an intermediate excited state between the first excited state and the second excited state, and the relation between the energy of the second excited state and the energy of the first excited state satisfies
Wherein the content of the first and second substances,
representing Planck constant, v the frequency of the second excitation light, Δ the detuning of the excitation light, E1Denotes the energy of the alkali metal atom in a first excited state, E2Represents the energy of the alkali metal atom in the second excited state; the detected terahertz wave is vertically emitted to a photosensitive surface of the atomic vapor pool, alkali metal atoms are transferred from a designated intermediate state to a third excited state under the action of the detected terahertz wave and form atomic population in the third excited state, wherein the energy of the alkali metal atoms in the second excited state and the third excited state and the frequency of the detected terahertz waveThe relationship between the rate and the detuning of the excitation light is satisfied
vTRepresenting the frequency of the terahertz wave to be measured, E3Represents the energy of the alkali metal atom in the third excited state; atoms in a third excited state generate spontaneous emission light with multiple frequencies during spontaneous emission, the spontaneous emission light enters a CCD image sensor (3) after being selected by a replaceable narrow-band filter (2), and after optical signals of the selected spontaneous emission light are converted into electric signals by the CCD image sensor (3), the electric signals are input into an image processing system (4) and imaged by the image processing system (4); and determining the intensity of the terahertz wave according to the fluorescence intensity output by the imaging of the image processing system (4), wherein the frequency of the selected spontaneous radiation light is the frequency of the terahertz wave to be detected.
2. The device for high-resolution imaging of terahertz waves according to claim 1, wherein the alkali metal atom is potassium, rubidium, or cesium.
3. The device for high-resolution imaging of terahertz waves according to claim 1, wherein the buffer gas is an inert gas.
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| GB2577727B (en) * | 2018-10-04 | 2021-07-21 | The Univ Of Durham | Method and apparatus for terahertz or microwave imaging |
| CN113405988A (en) * | 2021-05-14 | 2021-09-17 | 清远市天之衡量子科技有限公司 | Terahertz imaging method and system based on atomic gas chamber |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102507521A (en) * | 2011-11-04 | 2012-06-20 | 山西大学 | Method and device for improving definition of single-molecule fluorescence imaging |
| CN102545061A (en) * | 2012-01-19 | 2012-07-04 | 中国科学院上海微系统与信息技术研究所 | Preparation method for high-power terahertz quantum cascade laser |
| CN103616568A (en) * | 2013-12-07 | 2014-03-05 | 山西大学 | Microwave induction method and device based on Rydberg atoms |
| CN106018326A (en) * | 2016-05-26 | 2016-10-12 | 首都师范大学 | Monolithic integration device for tera-hertz time domain spectral system and preparation method |
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| GB201522640D0 (en) * | 2015-12-22 | 2016-02-03 | Isis Innovation | Electromagnetic frequency converter |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102507521A (en) * | 2011-11-04 | 2012-06-20 | 山西大学 | Method and device for improving definition of single-molecule fluorescence imaging |
| CN102545061A (en) * | 2012-01-19 | 2012-07-04 | 中国科学院上海微系统与信息技术研究所 | Preparation method for high-power terahertz quantum cascade laser |
| CN103616568A (en) * | 2013-12-07 | 2014-03-05 | 山西大学 | Microwave induction method and device based on Rydberg atoms |
| CN106018326A (en) * | 2016-05-26 | 2016-10-12 | 首都师范大学 | Monolithic integration device for tera-hertz time domain spectral system and preparation method |
Non-Patent Citations (2)
| Title |
|---|
| Real-time near-field terahertz imaging with atomic optical fluorescence;C. G. Wade，;《Nature Photonics》;20161107;第11卷(第1期);第40-44页 * |
| Waveguide mode imaging and dispersion analysis with terahertz near-field microscopy;Mitrofanov, O. et al;《Appl. Phys. Lett.》;20091231(第94期);第171104页 * |
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