CN107911931A - Atmospheric low-temperature plasma handles seed device and operating method - Google Patents
Atmospheric low-temperature plasma handles seed device and operating method Download PDFInfo
- Publication number
- CN107911931A CN107911931A CN201711245263.9A CN201711245263A CN107911931A CN 107911931 A CN107911931 A CN 107911931A CN 201711245263 A CN201711245263 A CN 201711245263A CN 107911931 A CN107911931 A CN 107911931A
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- Prior art keywords
- temperature plasma
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- base station
- insulator
- handle
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- 238000011017 operating method Methods 0.000 title abstract description 5
- 239000012212 insulator Substances 0.000 claims abstract description 31
- 229910052751 metal Inorganic materials 0.000 claims abstract description 16
- 239000002184 metal Substances 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims description 10
- 150000002500 ions Chemical class 0.000 claims description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 5
- 239000010453 quartz Substances 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 239000010431 corundum Substances 0.000 claims description 4
- 229910052593 corundum Inorganic materials 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 3
- 230000005284 excitation Effects 0.000 claims description 3
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 3
- 150000002910 rare earth metals Chemical class 0.000 claims description 3
- 238000005260 corrosion Methods 0.000 claims description 2
- 230000007797 corrosion Effects 0.000 claims description 2
- 150000002739 metals Chemical class 0.000 claims description 2
- 238000003825 pressing Methods 0.000 claims description 2
- 229910001220 stainless steel Inorganic materials 0.000 claims description 2
- 239000010935 stainless steel Substances 0.000 claims description 2
- 238000009413 insulation Methods 0.000 claims 1
- 230000004888 barrier function Effects 0.000 description 10
- 230000008569 process Effects 0.000 description 5
- 235000013311 vegetables Nutrition 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- -1 electronics Chemical class 0.000 description 3
- 230000033001 locomotion Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 235000013399 edible fruits Nutrition 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000035784 germination Effects 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 239000000575 pesticide Substances 0.000 description 2
- 241000894006 Bacteria Species 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 238000012271 agricultural production Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 238000003851 corona treatment Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 201000010099 disease Diseases 0.000 description 1
- 208000037265 diseases, disorders, signs and symptoms Diseases 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 235000015097 nutrients Nutrition 0.000 description 1
- 235000016709 nutrition Nutrition 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000000638 stimulation Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000010148 water-pollination Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/2406—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/2406—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
- H05H1/2418—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes the electrodes being embedded in the dielectric
Abstract
The present invention provides a kind of normal atmosphere glow discharge low-temp plasma to handle seed device, including Low Temperature Plasma Treating base station and low temperature plasma metal electrode, the low-temperature plasma processing base station is connected with the earth ground wire, the low temperature plasma metal electrode is connected with high pressure, the low temperature plasma metal electrode is arranged in insulator medium tube, it is located at equipped with insulator dielectric-slab on low-temperature plasma processing base station, cover low-temperature plasma processing base station, shown insulator medium tube is fixed by tetrafluoro stent, and the insulator medium tube is set to handle base station holding level with the low-temperature plasma, the tetrafluoro stent is equipped with handle, the both ends of the tetrafluoro stent handle base station with the low-temperature plasma by side plate and connect, and can on insulator dielectric-slab smooth sliding.The present invention also provides the operating method of equipment, and the present invention is easy to operate, controllability is strong, processing cost is low.
Description
Technical field
The invention belongs to plasma apparatus, more particularly to a kind of atmospheric low-temperature plasma method for treating seeds and operation
Method.
Background technology
Plasma is a kind of material aggregation state of high-energy, wherein containing substantial amounts of electronics, ion, excitation state original
Son, molecule, photon and free radical isoreactivity particle.Material, which is handled, using plasma can cause the physics of material surface
Change (such as etching, desorb, sputter, inject, excite and ionize) and chemical change (is such as aoxidized, decomposes, is crosslinked, polymerize and connect
Branch etc.), change material surface characteristic (including hydrophily, hydrophobicity, adhesiveness, anti-flammability, anti-corrosive properties, static electricity resistance to reach
And biocompatibility) purpose.Plasma can pass through glow discharge, corona discharge, dielectric barrier discharge, radio frequency discharge
And the mode such as microwave discharge produces.Dielectric barrier discharge is a kind of nonequilibrium state gas for having dielectric insertion discharge space
Electric discharge.Certain working gas is full of between two sparking electrodes, and wherein one or two electrode is covered with dielectric,
Medium can also be hung directly to discharge space or use granular Filled Dielectrics wherein, it is sufficiently high when applying between two electrodes
Alternating voltage when, interelectrode gas can it is breakdown and produce electric discharge, that is, generate dielectric barrier discharge.
Corona treatment seed principle：Encouraged using plasma generator and produce energy of plasma, change Interior Seed
Mechanism, so that crop yield；Meanwhile the thin of the surface of the seed is killed under the stimulation of energy of plasma and the Strong oxdiative of ozone
The problems such as bacterium, improves crop varieties quality, and enhancing crop disease-resistant, anti-harmful ability, effectively solve crop drought resistance, lodging-prevention, so that
Grain yield is improved, improves grain variety, preferably promotes grain-production, promotes agricultural production efficiency and increasing peasant income.
In plasma area, seed normal pressure, electric field, magnetic field, ion, electronics, aura compound action under,
Internal growth ability is activated, and improves its germinating energy, germination percentage, and growth is vigorous, and fruit is abundant, improves yield and increase
Nutritional ingredient, according to the vegetable seeds of different sections now, amount of increase in production is up to 10%-50%, also with the free of contamination spy of no pesticide
Point.
Do not have a kind of can be suitable for by each a variety of of dielectric barrier discharge generation Low Temperature Plasma Treating now
The theory or descriptive model of subprocessing.Its reason is various dielectric barrier discharges（Abbreviation DBD）Operating condition differ widely,
And existing physical process in discharge process, and have chemical process, influence each other, from final result it is difficult to conclude intercurrent tool
Body process.Cause complicated in practical applications to seed treatment now with low-temperature plasma, controllability is not strong, is processed into
This height.
The content of the invention
1st, technical problem to be solved：
Solve the problems such as existing utilization low temperature plasma is complicated to seed treatment, and nullability is not strong, and processing cost is high.
2nd, technical solution：
In order to solve problem above, the present invention provides a kind of atmospheric low-temperature plasma to handle seed device, including low temperature etc.
Gas ions handle base station 6 and low temperature plasma metal electrode, and the low-temperature plasma processing base station 6 is connected with the earth ground wire,
The low temperature plasma metal electrode is connected with high pressure, it is characterised in that：The low temperature plasma metal electrode is set
In insulator medium tube 5, it is located at equipped with insulator dielectric-slab 2 on low-temperature plasma processing base station 6, covers at low-temperature plasma
Base station 6 is managed, shown insulator medium tube 5 is fixed by tetrafluoro stent 3, and makes the insulator medium tube 5 and the low temperature etc.
Ion processing base station 6 keeps horizontal, and the tetrafluoro stent 3 is equipped with handle 4, and the both ends of the tetrafluoro stent 3 pass through 7 He of side plate
Low-temperature plasma processing base station 6 connects, and can on insulator dielectric-slab 2 smooth sliding.
Equipped with a power control switch 8 on handle 4.
The handle 4 and tetrafluoro stent 3 are threaded connection.
The insulator medium tube 5 is alundum tube, and surface has rare earth coating.
The insulator dielectric-slab 2 is corundum ceramic plate or high-purity quartz plate.
Present invention also offers the operating method of atmospheric low-temperature plasma processing sub-means.
3rd, beneficial effect：
The present invention compared with prior art, has following technique effect using above technical scheme：The low-temperature plasma of the present invention
Body can produce normal atmosphere glow discharge, easy to operate, controllability is strong, processing cost is low；It can be wanted according to processing seed effect
Ask, device processing speed and number of processes is adjusted flexibly, and handled in atmospheric air, processing cost is cheap, efficient.
Brief description of the drawings
Fig. 1 is the stereochemical structure shaft side figure of atmospheric low-temperature plasma seed-treating apparatus in the present invention.
Fig. 2 is the stereochemical structure front view of atmospheric low-temperature plasma seed-treating apparatus in the present invention.
Fig. 3 is the stereochemical structure left view of atmospheric low-temperature plasma seed-treating apparatus in the present invention.
Fig. 4 is the stereochemical structure top view of atmospheric low-temperature plasma seed-treating apparatus in the present invention.
Embodiment
Below by attached drawing, the present invention is described in detail.
As shown in Figure 1, a kind of atmospheric low-temperature plasma processing seed device, including plasma electrical source, low temperature plasma
Electrode base station 6, insulator dielectric-slab 2, insulator medium tube 5, metal electrode, handle 4, the Low Temperature Plasma Treating base station
6 are connected with the earth ground wire, and as the low-field electrode of low temperature plasma, the metal electrode of the low temperature plasma is placed on
In insulator medium tube 5, it is connected with high pressure, as the high-field electrode of low temperature plasma, equipped with insulator dielectric-slab 2 positioned at low
On isothermal plasma processing base station 6, Low Temperature Plasma Treating base station 6 is covered in, shown insulator medium tube 5 passes through tetrafluoro branch
Frame 3 is fixed, and makes the insulator medium tube 5 horizontal with 6 holding of Low Temperature Plasma Treating base station, the tetrafluoro stent
3 are equipped with handle 4, and the both ends of the tetrafluoro stent 3 handle base station 6 by side plate 7 and the low-temperature plasma and connect, and can
The smooth sliding on quartz plate 2.The lower section of insulator dielectric-slab 2 is provided with footing 1.
Turn on the power switch, high pressure is loaded on into metal electrode, in insulator medium tube 5 and Low Temperature Plasma Treating base
Plasma area is produced between platform 6.Power control switch is arranged on handle.
Vegetable seeds is placed among low temperature plasma generation area, allows low temperature plasma to pass through whole vegetable seeds
Surface handles the effect of vegetable seeds so as to reach.The seed-treating apparatus is by seed in normal pressure, electric field, magnetic field, ion, electricity
Under sub, aura compound action, internal growth ability is activated, and is improved its germinating energy, germination percentage, is grown vigorous, fruit
It is real abundant, improve yield and the component that has additional nutrients, according to the vegetable seeds of different sections now, amount of increase in production up to 10%-50%,
Also have the characteristics that no pesticide is free of contamination.
The Low Temperature Plasma Treating base station 6 is made by stainless steel or other corrosion resistant metals.
The insulator medium tube 5 is alundum tube, and surface has rare earth coating..
The insulator dielectric-slab 2 is corundum ceramic plate or high-purity quartz plate.
The handle 4 and tetrafluoro stent 3 are threaded connection.
In operating process, by handle, make the reciprocating motion of tetrafluoro stent at the uniform velocity, drive the metal electrode in alundum tube past
Multiple movement, makes seed receive uniform Low Temperature Plasma Treating.
Two electric levels are all covered with insulator in the present invention.When applying sufficiently high pulse alternating voltage between two electrodes,
Interelectrode gas can be breakdown and generation is discharged, that is, generates dielectric barrier discharge, and alundum tube and quartz plate are all insulators,
All play the role of dielectric barrier discharge, for the mode that the present invention uses for the electrode structure of pipeline, metal electrode is located at corundum
In pipe.So this equipment produces low temperature plasma for the mode of double-dielectric barrier discharge.Dielectric barrier discharge (DBD) is that have absolutely
A kind of nonequilibrium state gas discharge of edge medium insertion discharge space is also known as dielectric barrier discharge or voltolising.Dielectric impedance is put
Electric energy is enough in hyperbar and very wide frequency ranges of operation, common operating air pressure are 104~106.Supply frequency can be from
50Hz to 1MHz.
Present invention also offers the operating method of atmospheric low-temperature plasma processing sub-means, Step 1: seed is put
Put on the insulator dielectric-slab on low temperature plasma electrode base station 6；
Step 2: plasma electrical source is opened,
Step 3: pressing start button, equipment starts excitation and produces plasma, and it is past at the uniform velocity above seed to grasp handle
Multiple movement, processing time 5-60S.
Step 4: release button, equipment stops producing plasma.
The low-temperature plasma power supply controls Pulse excitated power supply for power density.
Although the present invention disclosed as above with preferred embodiment, they be not for limit the present invention, it is any ripe
This those skilled in the art is practised, without departing from the spirit and scope of the invention, can make various changes or retouch from working as, therefore the guarantor of the present invention
Shield scope should be subject to what claims hereof protection domain was defined.
Claims (8)
1. a kind of atmospheric low-temperature plasma handles seed device, including Low Temperature Plasma Treating base station（6）With low temperature etc. from
Daughter metal electrode, the low-temperature plasma handle base station（6）Connected with the earth ground wire, low temperature plasma metal electricity
Pole is connected with high pressure, it is characterised in that：The low temperature plasma metal electrode is arranged on insulator medium tube（5）It is interior, it is equipped with
Insulator dielectric-slab（2）Base station is handled positioned at low-temperature plasma（6）On, covering low-temperature plasma processing base station（6）, shown insulation
Body medium tube（5）Pass through tetrafluoro stent（3）It is fixed, and make the insulator medium tube（5）Base is handled with the low-temperature plasma
Platform（6）Keep horizontal, the tetrafluoro stent（3）It is equipped with handle（4）, the tetrafluoro stent（3）Both ends pass through side plate（7）With
The low-temperature plasma handles base station（6）Connection, and can be in insulator dielectric-slab（2）Upper smooth sliding.
2. atmospheric low-temperature plasma as claimed in claim 1 handles seed device, it is characterised in that：Controlled equipped with a power supply
Switch（8）In handle（4）On.
3. atmospheric low-temperature plasma as claimed in claim 1 or 2 handles seed device, it is characterised in that：The handle（4）
With tetrafluoro stent（3）To be threadedly coupled.
4. atmospheric low-temperature plasma as claimed in claim 1 or 2 handles seed device, it is characterised in that：The insulator
Medium tube（5）For alundum tube, surface has rare earth coating.
5. atmospheric low-temperature plasma processing seed device as claimed in claim 1 or 2, it is characterised in that：Described is exhausted
Edge body dielectric-slab（2）For corundum ceramic plate or high-purity quartz plate.
6. atmospheric low-temperature plasma as claimed in claim 1 or 2 handles seed device, it is characterised in that：Described low temperature etc.
Gas ions processing base station 6 is made by stainless steel or other corrosion resistant metals.
A kind of 7. user of atmospheric low-temperature plasma processing seed device as described in claim 1-6 any claims
Method, comprises the following steps：Step 1: seed is placed on low temperature plasma electrode base station（6）On insulator dielectric-slab on；
Step 2: opening plasma electrical source, Step 3: pressing start button, equipment starts excitation and produces plasma, grasps
Handle at the uniform velocity moves back and forth above seed, processing time 5-60S；Step 4: release button, equipment stops producing plasma
Body.
8. one kind is the method for claim 7, it is characterised in that：The low-temperature plasma power supply controls for power density
Pulse excitated power supply.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711245263.9A CN107911931A (en) | 2017-12-01 | 2017-12-01 | Atmospheric low-temperature plasma handles seed device and operating method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711245263.9A CN107911931A (en) | 2017-12-01 | 2017-12-01 | Atmospheric low-temperature plasma handles seed device and operating method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107911931A true CN107911931A (en) | 2018-04-13 |
Family
ID=61848363
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711245263.9A Pending CN107911931A (en) | 2017-12-01 | 2017-12-01 | Atmospheric low-temperature plasma handles seed device and operating method |
Country Status (1)
| Country | Link |
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| CN (1) | CN107911931A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109041651A (en) * | 2018-09-28 | 2018-12-21 | 东华大学 | A kind of method of low temperature plasma activation spotted colored pea seed |
| CN109104937A (en) * | 2018-10-26 | 2019-01-01 | 新疆西域量子农业科技有限公司 | A kind of the crop seeds processing unit and method of quantizing resonance high-frequency energy |
| CN109168243A (en) * | 2018-10-15 | 2019-01-08 | 南京苏曼等离子科技有限公司 | A kind of normal temperature and pressure plasma plate, film sheet and minute materials processing equipment |
| CN109561563A (en) * | 2018-12-07 | 2019-04-02 | 中国人民解放军空军工程大学 | Improve the device and method of polyimide base material driver adhesive property using low temperature plasma |
| CN113287386A (en) * | 2021-05-17 | 2021-08-24 | 安徽中科大禹科技有限公司 | Plasma seed treatment device |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109041651A (en) * | 2018-09-28 | 2018-12-21 | 东华大学 | A kind of method of low temperature plasma activation spotted colored pea seed |
| CN109041651B (en) * | 2018-09-28 | 2021-07-27 | 东华大学 | Method for activating semen Pisi Sativi by low temperature plasma |
| CN109168243A (en) * | 2018-10-15 | 2019-01-08 | 南京苏曼等离子科技有限公司 | A kind of normal temperature and pressure plasma plate, film sheet and minute materials processing equipment |
| CN109104937A (en) * | 2018-10-26 | 2019-01-01 | 新疆西域量子农业科技有限公司 | A kind of the crop seeds processing unit and method of quantizing resonance high-frequency energy |
| CN109561563A (en) * | 2018-12-07 | 2019-04-02 | 中国人民解放军空军工程大学 | Improve the device and method of polyimide base material driver adhesive property using low temperature plasma |
| CN109561563B (en) * | 2018-12-07 | 2021-04-06 | 中国人民解放军空军工程大学 | Device and method for improving adhesive property of polyimide substrate exciter by using low-temperature plasma |
| CN113287386A (en) * | 2021-05-17 | 2021-08-24 | 安徽中科大禹科技有限公司 | Plasma seed treatment device |
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