CN101258784A - Plasma processing device - Google Patents

Plasma processing device Download PDF

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Publication number
CN101258784A
CN101258784A CNA200680032713XA CN200680032713A CN101258784A CN 101258784 A CN101258784 A CN 101258784A CN A200680032713X A CNA200680032713X A CN A200680032713XA CN 200680032713 A CN200680032713 A CN 200680032713A CN 101258784 A CN101258784 A CN 101258784A
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China
Prior art keywords
electrode
moving range
dielectric
article
metal surface
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CNA200680032713XA
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Chinese (zh)
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CN101258784B (en
Inventor
中岛节男
武内稔公
松崎纯一
真弓聪
西川理
斋藤直道
中野良宪
福士麻琴
古野喜彦
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Sekisui Chemical Co Ltd
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Sekisui Chemical Co Ltd
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Priority claimed from JP2006105122A external-priority patent/JP4499055B2/en
Priority claimed from JP2006105123A external-priority patent/JP4619315B2/en
Application filed by Sekisui Chemical Co Ltd filed Critical Sekisui Chemical Co Ltd
Publication of CN101258784A publication Critical patent/CN101258784A/en
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Publication of CN101258784B publication Critical patent/CN101258784B/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/2406—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/0203—Protection arrangements
    • H01J2237/0206—Extinguishing, preventing or controlling unwanted discharges

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)

Abstract

The present invention provides an atmospheric pressure plasma treatment device capable of coping with a large area of an object to be treated and assuring preferable treatment at a normal discharge treatment start point. A first metal surface (21a) of a first stage unit (21) of a stage (20) of an atmospheric pressure plasma processing device is exposed and a dielectric work (W) to be treated is placed. A second stage unit (22) is arranged at the periphery of the first stage unit (21). A solid dielectric layer (25) is arranged on a second metal (24) of the second stage unit (22) and the peripheral portion of the work (W) to be treated is placed in an internal dielectric portion (26) of the solid dielectric layer (25). An electrode (11) forms a run-up discharge (D2) in a second movement range (R2) on the second stage unit (22) and moves to a first movement range (R1) on the first stage unit (21) to form a normal plasma discharge (D1).

Description

Plasma processing equipment
Technical field
The present invention relates to a kind of plasma processing equipment, this plasma process equipment is by producing plasma discharge and article to be processed are exposed to the surface that this plasma discharge is processed article to be processed under approximate atmospheric pressure.The invention particularly relates to a kind of atmos plasma process equipment that when article are made up of dielectric substances such as glass substrate, is suitable for.
Background technology
By under approximate atmospheric pressure, producing plasma discharge and article being placed on the atmospheric plasma process equipment that comes the surface of article such as processed glass substrate in the plasma discharge space is known in the art.This equipment typically has high-field electrode and the grounding electrode that is arranged to face with each other.In the above-mentioned electrode each has the solid dielectric layer that is formed on the apparent surface so that improve the stability of discharge.Solid dielectric layer typically is made up of heat spray alumina plate or ceramic wafer (thermally-sprayedalumina or a ceramic plate).In many cases, grounding electrode is also as the platform of placing article thereon.It is relative with the last article of placing of the subsidiary platform (ground electrode-cum-platform) of grounding electrode that high-field electrode is arranged to.When to high-field electrode supply voltage, between high-field electrode and the subsidiary platform of grounding electrode, apply electric field, thereby produce the atmos plasma discharge.The processing gas that is applicable to the processing of expection is directed into atmos plasma discharge.Processing gas is by plasma, the contact article and with the article reaction, therefore process the surface of article.
Patent documentation 1: the open communique No.2004-228136 of Japan Patent.
Summary of the invention
[the technical problem to be solved in the present invention]
In recent years, article to be processed are increasing, therefore, need to enlarge the subsidiary platform of grounding electrode.The expansion of platform need enlarge the solid dielectric layer on the top surface of platform.Yet, being not easy to form large-area solid dielectric layer, this causes the increase of manufacturing cost inevitably.
On the other hand, article typically are made up of dielectric substances such as glass.Therefore, if the article that dielectric substance is formed can so just not need solid dielectric layer is arranged on the metal surface of platform with the solid dielectric layer that acts on platform.In this case, expectation fully covers the metal surface of platform by this way with article, i.e. the mode of protruding a little than the metal surface of platform with the peripheral part of article, thus can place arc discharge.
Yet, in this step, when electrode is positioned at the top of article or does not produce discharge when outside.When electrode further moves to the top of end portion of metal surface of platform inwardly than the peripheral part of article, produce plasma discharge suddenly and begin processing.Therefore, unstable easily at processing starting point place (that is, peripheral part and the further boundary member between the main part in the inboard) discharging condition.As a result, boundary member (end portion of main part) may be processed inadequately or is compromised.
[technical scheme of technical solution problem]
In view of the above problems, according to the present invention, a kind of plasma processing equipment is provided, this plasma process equipment discharges and processes the surface of article to be processed by article to be processed being exposed to approximate atmos plasma, these article to be processed mainly are made up of dielectric substance, and described equipment comprises:
Platform, described comprises first part (main placement part) and second part (side part), described first part has first metal surface (master metal placement surface) of exposure, described second part has second metal surface (side metal part) of the solid dielectric layer of being coated with (side dielectric components) and is arranged on the neighboring part of described first part, described article are placed on described first metal surface of described first part, thereby make that the peripheral part of described article is protruding in described second part; With
Electrode, described electrode is relative removable in the scope that comprises first moving range (primary importance) and second moving range (second place) with respect to described, described electrode is relative with described first part so that produce described plasma discharge in first moving range, and described electrode is relative with described second part in described second moving range.
In this arrangement, therefore article to be processed can eliminate the necessity that the solid dielectric layer of being made up of coating film or ceramic wafer is set with the solid dielectric layer of first metal surface that acts on platform on first metal surface.This has saved manufacturing cost, and can more easily enlarge platform.In this arrangement, can between the electrode in second moving range and second part, apply electric field.This allows to produce before electrode enters first moving range and helps away discharge, for normal plasma process good the preparation.Discharging condition when as a result, normal plasma discharge begins can be at peripheral part and further more stable near the boundary portion office between the inboard main part than the peripheral part of article.Prevent the infringement of the end portion of the main part of article and guarantee the suitable processing of end portion.
Preferably, the area of first metal surface is than the area of article point a little.This allows the main part of article to cover the whole of first metal surface.Preferably, the peripheral part of article is placed on second part.
Preferably, the thickness of the described solid dielectric layer of described second part and dielectric constant are arranged so that and produce described plasma discharge between described electrode in described second moving range and described second part.
This guaranteed before electrode enters first moving range to produce and helps away discharge, therefore stablized the discharging condition of terminal part office of the main part of article reliably.
Preferably, the described solid dielectric layer of described second part comprises inner dielectric part (peripheral placement part) and outer dielectric part, the peripheral part of described article will be placed on the inner dielectric part, described outer dielectric partly is arranged on the opposite side relative with described first part of described inner dielectric part, and described outer dielectric part is more protruded than the described peripheral part of described article.
Preferably, described at least outer dielectric part is provided with and covers described second metal surface corresponding to described second metal surface in described inner dielectric part and the described outer dielectric part.
This allows to help away discharge in the generation of the outside of the peripheral part of article.
Preferably, the ratio of the thickness of the ratio of the thickness of outer dielectric part and dielectric constant and article and dielectric constant is roughly the same.
Produce above the outer dielectric part of this permission outside the peripheral part than article further is positioned at and help away discharge.
Preferably, the ratio of the thickness of the ratio of the thickness of described outer dielectric part and dielectric constant and described article and dielectric constant is roughly the same.
Preferably, the dielectric constant of described outer dielectric part becomes to make the capacity of outer dielectric per unit area partly to equate with the capacity of the per unit area of described article with thickness setting.
The condition of the regular picture of the top of the condition that helps away discharge of this permission outer dielectric part top and the main part of article is roughly the same.
Preferably, described electrode has on the direction that relatively moves the width across outer dielectric part and first part.
This allow when electrode from second moving range when first moving range moves, not only above the end portion of the main part of article, but also externally there is electric field in the top of dielectric part.Like this, the concentrating of electric field of top of end portion of the main part of article can be prevented, and the suitable processing of end portion of the main part of article can be guaranteed.
Preferably, the width of electrode the width on the direction that relatively moves is relatively moving direction at least greater than inner dielectric part on.
Comparable described second metal surface, described first metal surface (contact surface between second metal part and the solid dielectric layer) is more protruding in described electrode.Surperficial comparable described first metal surface of described outer dielectric part is more protruding in described electrode.When the dielectric constant of outer dielectric part during greater than the dielectric constant of article, this layout is more suitable.
When the dielectric constant of outer dielectric part during less than the dielectric constant of article, preferably the contact surface between second metal part and the solid dielectric layer is more protruding in electrode than first metal surface.
Preferably, the more protruding protrusion amount and the thickness of described article to described electrode in described first metal surface of surface ratio of described outer dielectric part is roughly the same.
This allows to help away the flox condition of the processing gas between the electrode and article during the flox condition of the processing gas between interdischarge interval electrode and second part and the normal plasma discharge roughly the same.
Preferably, the surface of inner dielectric part is concordant with first metal surface.Preferably, the surface of inner dielectric part is concordant continuously with first metal surface.
This allows the main part of article to contact first metal surface reliably, and this also allows the peripheral part of article to contact inner dielectric part reliably.This prevents to form the gap between the back of article and the platform.
The front of inner dielectric part can be concordant each other with first metal surface, when inner dielectric part is extended to first part, the back of inner dielectric part can be the inclined surface towards positive face tilt, and the thickness of inner dielectric part can reduce (see figure 7) towards first part.
This total dielectric constant that allows inner dielectric part and the peripheral part that is placed on the article on the inner dielectric part is towards the little by little more approaching dielectric constant that article are only arranged of first part.Therefore, the plasma discharge condition that helps away region of discharge of the top of the peripheral part of article more near the plasma discharge condition in regular picture district, therefore prevents discharging condition discontinuous of the boundary member between the end portion of main part of peripheral part and article towards the regular picture district.
Preferably, inner dielectric part and outer dielectric partial continuous and integrally formation.
This prevents that second metal part boundary between inner dielectric part and outer dielectric part from exposing, and prevents that therefore creeping discharge from impacting the second metal part by the border between inner dielectric part and the outer dielectric part.
Alternatively, inner dielectric part and outer dielectric part forms separably.
Preferably, form step between inner dielectric part and the outer dielectric part.In this arrangement, the end surfaces of article can be placed against step, therefore the accurate location of guaranteeing article.
Preferably, second metal of first metal of first part part and second part partly contacts with each other or is continuous each other, and preferably, the second metal part branch is arranged on the rear side of inner dielectric part.
This allow when positioning of electrode becomes across second moving range and first moving range plasma discharge to help away region of discharge and regular picture district be continuous, so further guarantee the suitable processing of end portion of the main part of article.
Preferably, described comprises metal playscript with stage directions body;
Wherein further be positioned at inboard part and comprise first metal surface of described exposure, so that constitute described first part than the peripheral part of described playscript with stage directions body; And
The peripheral part of wherein said playscript with stage directions body comprises described second metal surface that is coated with described solid dielectric layer, and the described peripheral part of described playscript with stage directions body and described solid dielectric layer constitute described second part.
In this arrangement, second metal part of first metal of first part part and second part can integrally be constructed, and therefore guarantees the continuity between region of discharge and the regular picture district of helping away of plasma discharge during across second moving range and first moving range when positioning of electrode one-tenth.
Preferably, described electrode is relative removable in the scope that comprises described first moving range, described second moving range and the 3rd moving range, and described the 3rd moving range is positioned on the opposite side relative with described first moving range of described second moving range.
Preferably, described equipment also comprises power circuit.Preferably, described electrode through described second moving range from described the 3rd moving range when described first moving range moves, when described electrode arrives the precalculated position, described power circuit begins to be used for described plasma discharge to described electrode supply voltage, and described precalculated position is positioned at and makes described positioning of electrode become across the position of described second moving range and described the 3rd moving range and make described positioning of electrode between near the position before described first moving range.
In this arrangement, the direction of the electric field of self-electrode can guide definitely to second metal during supply of beginning voltage, therefore prevents from the generation of the undesired discharge of self-electrode.The concentration of local of electric field on the outer end portion of second metal of self-electrode can be avoided, infringement can be prevented the solid dielectric layer of second part.
Electrode can be positioned in the pre-position across second moving range and the 3rd moving range.In this case, preferably about percent 30-70 of described electrode is arranged in described second moving range, and the remainder of described electrode is arranged in described the 3rd moving range.
Make percent 30 or be placed in second moving range of electrode when the supply of beginning voltage, prevent undesired discharge definitely more, and avoid concentrating on the part that electric field grades in the outer end of second metal definitely.Make electrode percent 70 or still less be placed on can eliminate in second moving range and make second necessity that part is unnecessarily wide.
More preferably, about percent 50 of described electrode is arranged in described second moving range, and the remainder of described electrode is arranged in described the 3rd moving range.
This prevents from the undesired discharge of self-electrode reliably, and avoids electric field concentrating on the outer end portion of second metal reliably.
Electrode can be more than or equal to the width on the direction that relatively moves of second part (i.e. second moving range) at electrode at the width on the direction that relatively moves of electrode.
The precalculated position can be set in across the position of second moving range and the 3rd moving range with near any position between the position before first moving range.
When the width of electrode during greater than the width of second part, the precalculated position can be the position across second moving range and the 3rd moving range, and simultaneously near before first moving range.
When the width of electrode during less than the width of second part, it is position across second moving range and the 3rd moving range that the precalculated position there is no need.The precalculated position can be entire electrode is positioned at second moving range on Width position.
Preferably, described also comprises the 3rd part, and described the 3rd part has insulation characterisitic and be positioned on the opposite side relative with described first part of described second part.Preferably, when described electrode was arranged in described the 3rd moving range, described electrode was relative with described the 3rd part.
This allows electrode to be positioned at the top of the 3rd part.Can be in the outside of second part, and the path that is formed for processing gas between electrode and the 3rd part.
Preferably the solid dielectric layer of the front of the 3rd part and second part is positive concordant.
According to another aspect of the present invention, a kind of atmos plasma process equipment is provided, this atmos plasma process equipment discharges and processes the surface of article to be processed by article to be processed being exposed to approximate atmos plasma, these article to be processed mainly are made up of dielectric substance, and described equipment comprises:
Platform, described comprises first part and second part, described first part has first metal surface of exposure, described second part has second metal surface of the solid dielectric layer of being coated with and is arranged on the neighboring part of described first part, described article are placed on described first metal surface of described first part, thereby make that the peripheral part of described article is protruding in described second part;
First electrode, described first electrode is relative removable in the scope that comprises first moving range, second moving range and the 3rd moving range with respect to described, described electrode is relative with described first part in first moving range, described electrode is relative with described second part in described second moving range, and described the 3rd moving range is positioned on the opposite side relative with described first moving range of described second moving range;
Second electrode, described second positioning of electrode becomes than more close described the 3rd moving range side of described first electrode, and described second electrode is relative removable in the scope that comprises described first moving range, described second moving range and described the 3rd moving range with respect to described integratedly with described first electrode;
First power circuit, entering between moving period when described first electrode arrives the precalculated position, described first power circuit begins to be used for described plasma discharge to described first electrode supply voltage, enter first and second electrodes described in the motion and move towards described first moving range from described the 3rd moving range through described second moving range described, described precalculated position is positioned at and makes described first positioning of electrode become across the position of described second moving range and described the 3rd moving range and make described first positioning of electrode between near the position before described first moving range; With
The second source circuit, entering between moving period when described second electrode arrives the precalculated position, described second source circuit begins to be used for described plasma discharge to described second electrode supply voltage, and described precalculated position is positioned at and makes described second positioning of electrode become across the position of described second moving range and described the 3rd moving range and make described second positioning of electrode between near the position before described first moving range.
In this arrangement, therefore article can eliminate the necessity that the solid dielectric layer of being made up of coating film or ceramic wafer is set with the solid dielectric layer of first metal surface that acts on platform on first metal surface.This has reduced manufacturing cost, and feasible easier expansion platform.Apply electric field between electrode in second moving range and second part.Allow like this before electrode enters first moving range, to produce and help away discharge, for normal plasma process preparation.As a result, the discharging condition in the time of normal plasma discharge being begun is at peripheral part and more stable in further near the boundary member between the inboard main part than the peripheral part of article.Therefore, prevent infringement, and can guarantee the suitable processing of end portion the end portion of the main part of article.
In addition, begin when first electrode arrives the precalculated position to first electrode supply voltage, this guarantees to be directed to second metal from the direction of the electric field of first electrode.Subsequently, begin when second electrode arrives the precalculated position to second electrode supply voltage, this guarantees to be directed to second metal from the direction of the electric field of second electrode.Like this, by giving first and second electrodes supply voltage successively, when beginning, the voltage supply can prevent that undesired discharge and electric field are concentrated.
According to the present invention, be applicable to that the type of the discharge of Surface Machining comprises corona discharge (coronadischarge), creeping discharge (creeping discharge), dielectric barrier discharge (dielectric barrier discharge) and glow discharge (glow discharge).Glow discharge under the preferably approximate atmospheric pressure (roughly normal pressure).Here, roughly normal pressure refers to 1.013 * 10 4～50.663 * 10 4Pressure in the Pa scope.Consider the simplicity of the structure of pressure controlled easiness and equipment, preferably 1.333 * 10 4～10.664 * 10 4Pressure in the Pa scope, more preferably 9.331 * 10 4～10.397 * 10 4Pressure in the Pa scope.
[technique effect]
According to the present invention, article can be with the solid dielectric layer of first metal surface that acts on platform.This has eliminated the necessity that the solid dielectric layer of being made up of coating film or ceramic wafer is set on first metal surface.This has reduced manufacturing cost, and feasible easier expansion platform.In addition, can be between the electrode in second moving range and second part the time electric field.This allows to produce and helps away discharge, for normal plasma discharge good the preparation.As a result, the discharging condition in the time of can making the beginning of normal plasma discharge of top of end portion of main part of article is stable.Therefore, infringement can be prevented, and the suitable processing of end portion can be guaranteed the part of the end portion of the main part that comprises article.
Description of drawings
Fig. 1 is the main cutaway view of signal according to the atmospheric plasma process equipment of the first embodiment of the present invention;
Fig. 2 is the main cutaway view that is presented at in the process of apparatus processing substrate substrate being placed on the atmospheric plasma process equipment of the step on the platform;
Fig. 3 be show positioning of electrode in second moving range step and with equipment in the processing of substrate externally dielectric part above the main cutaway view of the atmospheric plasma process equipment that helps away discharge of generation;
Fig. 4 be show with electrode cover whole second part and with equipment in the processing of substrate above the peripheral part of substrate generation help away the main cutaway view of atmospheric plasma process equipment of the step of discharge;
Fig. 5 be show positioning of electrode become across the top position of the end portion of the top position of second part and first part and with equipment in the processing of substrate above the end portion of the main part of substrate the main cutaway view of the atmospheric plasma process equipment of the step of the normal plasma discharge of generation;
Fig. 6 is the main cutaway view of demonstration with the atmospheric plasma process equipment of the step of the roughly mid portion of the main part of equipment plasma process substrate;
Fig. 7 is that main cutaway view (solid dielectric layer change modification) is illustrated in the part of atmospheric plasma process equipment according to a second embodiment of the present invention;
Fig. 8 is that main cutaway view (solid dielectric layer change modification) is illustrated in the part of the atmospheric plasma process equipment of a third embodiment in accordance with the invention;
Fig. 9 is that main cutaway view (solid dielectric layer change modification) is illustrated in the part of the atmospheric plasma process equipment of a fourth embodiment in accordance with the invention;
Figure 10 is the main cutaway view of signal of atmospheric plasma process equipment according to a fifth embodiment of the invention;
Figure 11 shows with equipment in the processing of substrate, machining cell retreat into platform the outside, substrate is prevented on the platform and the step of beginning mobile machining cell above the platform, according to the main cutaway view of signal of the atmospheric plasma process equipment of the 5th embodiment;
Figure 12 shows with equipment in the processing of substrate, right positioning of electrode across the step in the precalculated position of second moving range and the 3rd moving range, according to the main cutaway view of signal of the atmospheric plasma process equipment of the 5th embodiment;
Figure 13 shows with equipment in the processing of substrate, target is positioned at the step of pre-position, according to the main cutaway view of signal of the atmospheric plasma process equipment of the 5th embodiment;
Figure 14 shows with equipment in the processing of substrate, left positioning of electrode the pre-position and right positioning of electrode across the step of the position of first moving range and second moving range, according to the main cutaway view of signal of the atmospheric plasma process equipment of the 5th embodiment;
Figure 15 be show whole machining cell is positioned in first moving range and with etc. from the step of the main part of process substrate, according to the main cutaway view of signal of the atmospheric plasma process equipment of the 5th embodiment;
Figure 16 shows the signal main cutaway view according to the atmospheric plasma process equipment of five embodiment of right electrode in the pre-position, and wherein the precalculated position is the starting point of voltage supply, and the precalculated position is the whole position that is positioned at second moving range of each electrode;
Figure 17 is the main cutaway view of atmospheric plasma process equipment with sixth embodiment of the present invention of the single electrode wideer than second part, shows positioning of electrode in the pre-position across second moving range and the 3rd moving range.
Figure 18 is the main cutaway view of the atmospheric plasma process equipment of the 6th embodiment, and wherein the precalculated position of electrode is the starting point of voltage supply, and the precalculated position is near the position before first moving range.
Reference marker
W substrate (article to be processed) (substrate (object to be processed))
The main part of Wa substrate (main portion of the substrate)
The end portion of the main part of Wae substrate (end portion of the main portionof the substrate)
The peripheral part of Wb substrate (peripheral portion of the substrate)
M atmos plasma process equipment (atmospheric-pressure plasma processingapparatus)
10 machining cells (processing unit)
11 electrodes (electrode)
11A electrode (electrode)
11B electrode (electrode)
11C electrode (electrode)
12 retainers (holder)
13 solid dielectric sheets (solid dielectric plate)
20 (stage)
20A playscript with stage directions body (stage body)
21 first parts (first stage portion)
21a first metal surface (first metal surface)
22 second parts (second stage portion)
23 housings, the 3rd part (outer frame, third stage portion)
24 second metals parts (second metal portion)
24a second metal surface (second metal surface)
25 solid dielectric layer (solid dielectric layer)
26 inner dielectric part (inner dielectric portion)
27 outer dielectric parts (outer dielectric portion)
30 power circuits (power supply circuit)
31A switch block (switch part)
31B switch block (switch part)
31C switch block (switch part)
40 travel mechanisms (moving mechanism)
The normal plasma discharge of D1 district (regular plasma discharge zone)
The D2 plasma discharge helps away district (plasma discharge run up zone)
D2a helps away region of discharge (run up discharge zone)
D2b helps away region of discharge (run up discharge zone)
R1 first moving range (first movement range)
R2 second moving range (second movement range)
R3 the 3rd moving range (third movement range)
Embodiment
Below the first embodiment of the present invention will be described.
Fig. 1 shows the schematic diagram of atmospheric plasma process equipment M.Atmospheric plasma process equipment M comprises machining cell 10 and platform 20.Machining cell 10 has high-field electrode 11 and keeps the retainer 12 of electrode 11.Machining cell 10 and high-field electrode 11 extend on the direction perpendicular to the diagram plane of Fig. 1.Power circuit 30 is connected to high-field electrode 11.Power circuit 30 is used to produce the atmos plasma discharge for electrode 11 supply voltages.Supply voltage can be the voltage of continuous wave, for example interrupted wae such as sine voltage or impulse wave voltage.Solid dielectric sheet 13 as the solid dielectric layer of ceramic is arranged on the bottom of machining cell 10, and machining cell 10 comprises the lower surface of high-field electrode 11.
Although not shown, the processing gas supply line is connected to machining cell 10 from the processing source of the gas.Processing gas from the processing gas supply line blows to machining cell 10 down.This gas of the processing of expectation that is applicable to is used as processing gas.For example, CF 4Be used to etching and processing or be used for waterproof processing (water repellent processing) Deng fluorocarbon and nitrogen.
Platform 20 is positioned at the below of machining cell 10.Gap between lower surface of machining cell 10 (lower surface of solid dielectric sheet 13) and the platform 20 is several millimeter magnitudes.Ratio is exaggerative in the diagram intermediate gap.
Platform 20 comprises first part 21, be arranged on second part 22 on the neighboring part of first part 21 and be arranged on housing 23 (the 3rd part) on the neighboring part of second part 22.
First part 21 made by metals such as aluminium (first metal), and has quadrangle form in vertical view.The same length of the degree of depth of first part 21 (perpendicular to the size on the direction on the diagram plane of Fig. 1) and electrode 11.
Solid dielectric layer is not arranged on the top surface 21a (first metal surface) of metal first part 21, and metal surface 21a exposes.Metal surface 21a has quadrangle form in vertical view, and flatly extends.
Shown in the dotted line among Fig. 1, substrate (article to be processed) W will be placed directly on the first metal surface 21a of exposure.Substrate W can be made up of the dielectric substances such as glass that are used for big LCD or colour filter, and has quadrangle form in vertical view.The relative dielectric constant ε that forms the glass of substrate W wBe roughly ε w=5.The thickness t of substrate W wFor example be roughly t w=0.7 millimeter.
The area of the first metal surface 21a (area of first part 21) is slightly less than the area of substrate W.Therefore, further be positioned at inboard main part Wa than the peripheral part Wb of substrate W and cover the whole first metal surface 21a.The peripheral part Wb of substrate W further protrudes outwardly than the first metal surface 21a, in other words, protrudes towards second part 22.The peripheral part Wb of substrate for example roughly is 10 millimeters from the protrusion amount that the first metal surface 21a protrudes.
Second part 22 has second metal 24 and solid dielectric layer 25.Second metal 24 is made up of metals such as aluminium.Second metal 24 is continuous from the first metal integral ground of forming first part 21.First and second metals 21,24 constitute playscript with stage directions body 20A.
For more detailed, platform 20 comprises the playscript with stage directions body 20A that is made up of aluminium etc., and has quadrangle form in vertical view.The mid portion of playscript with stage directions body 20A (further being positioned at inboard part than peripheral part) is first metal 21 (first part), and the peripheral part of playscript with stage directions body 20A is second metal 24.Playscript with stage directions body 20A (first and second metals 21,24) electrical ground.Therefore, playscript with stage directions body 20A is as the grounding electrode towards high-field electrode 11.
The top surface 24a of second metal 24 (second metal surface) of second part 22 forms step with respect to the first metal surface 21a depression of first part 21 between first and second metal surfaces.(the first metal surface 21a protrudes more up than the second metal surface 24a) second metal surface 24a is a level.
The second metal surface 24a is provided with solid dielectric layer 25.(further be positioned at inboard main part 21 for the peripheral part 24 among the playscript with stage directions body 20A with than peripheral part, only peripheral part 24 is provided with solid dielectric layer 25) solid dielectric layer 25 covers the whole second metal surface 24a.Solid dielectric layer 25 is by aluminium oxide (Al 2O 3) wait ceramic material to form.The relative dielectric constant ε that forms the aluminium oxide of solid dielectric layer 25 25Be roughly the twice of the relative dielectric constant of substrate W, promptly be roughly ε 25=10.
Solid dielectric layer 25 has inside dielectric part 26 and the outer dielectric part 27 on housing 23 sides on first part 21 side.Inside and outside dielectric part 26,27 forms continuously and integrally.
The internal end surface of inner dielectric part 26 (first part 21 sides on end surfaces) is against the step rise surface of living between the first metal surface 21a and the second metal surface 24a.The top surface of inner dielectric part 26 is concordant with the first metal surface 21a.
The peripheral part Wb of substrate W will be placed on the top surface of inner dielectric part 26.
Outer dielectric part 27 is thicker than inner dielectric part 26.Outer dielectric part 27 is protruded more up than the inner dielectric part 26 and the first metal surface 21a.Externally form step between dielectric part 27 and the inner dielectric part 26.Step further is positioned at the inboard than the outer end portion of second metal 24 (first part 21 sides on).
The periphery surface of substrate W is placed against the step rise surface between outer dielectric part 27 and the inner dielectric part 26.The height of the step between outer dielectric part 27 and the inner dielectric part 26 and the thickness of substrate W are roughly the same.Therefore, the top surface of the top surface of outer dielectric part 27 and substrate W is roughly concordant each other.
Outer dielectric part 27 further is positioned at the outside than substrate W.
The outer end face of outer dielectric part 27 is protruded more outwardly than second metal 24.The housing of being made up of insulating material such as resins 23 is arranged on the outer surface of the outer dielectric part 27 and second metal 24.
The ratio of the thickness/dielectric constant of outer dielectric part 27 is set for the ratio of thickness/dielectric constant of substrate W roughly the same.This makes that the discharging condition of the discharging condition of second 22 top and first 21 top is roughly the same.Therefore, when the dielectric constant of solid dielectric layer 25 was the twice of dielectric constant of substrate W, the thickness setting of outer dielectric part 27 became the twice of the thickness that roughly is substrate W.When the relative dielectric constant of glass substrate W at ε wIn=5.3～6.5 the approximate range and the thickness of substrate W at t wIn=0.5～0.7 millimeter the approximate range, and the relative dielectric constant of solid dielectric layer 25 is at ε 25In the time of in=9～11 the approximate range, the thickness setting of outer dielectric part 27 becomes at t so 27In=0.69～1.45 millimeters the approximate range.For example the relative dielectric constant as substrate W is roughly ε w=5 and the thickness of substrate W be roughly t wIn the time of=0.7 millimeter, relative dielectric constant is roughly ε 25The thickness setting of the outer dielectric part 27 of=10 oxidation aluminum solid dielectric layer 25 becomes to be roughly t 27=1.4 millimeters.
The width that the right side of second part 22 and left make progress is littler than the width that the right side and the left of high-field electrode 11 makes progress.This means that high-field electrode 11 has the width across second part 22 and first part 21.
As shown in Figure 1, atmospheric plasma process equipment M also comprises travel mechanism 40.Travel mechanism 40 is connected to machining cell 10.Travel mechanism 40 drives machining cell 10 and goes up reciprocating motion with left to (with the vertical vertical direction of electrode 11) right, shown in the arrow among Fig. 2-6.This means that high-field electrode 11 upwards relatively moves at right and left with respect to platform 20.The scope that relatively moves of high-field electrode 11 comprises the first moving range R1 and the second moving range R2, and electrode 11 is relative with first part 21 in the first moving range R1, electrode 11 and second part 22 relative (seeing Fig. 3-5) in the second moving range R2.High-field electrode 11 among Fig. 5 is relative with second part 22 with the end portion of first part 21, and is positioned to across the first moving range R1 and the second moving range R2.
Alternatively, travel mechanism 40 can be connected to platform 20, and platform 20 can upwards move back and forth at right and left.
For the atmospheric plasma process equipment M that uses said structure comes the surface of process substrate W, as shown in Figure 2, at first, machining cell 10 retreats into the outside (for example, the left side) of platform 20, and substrate W is placed on the platform 20 then.Further being positioned at inboard main part Wa than peripheral part Wb and directly being placed on the first metal surface 21a of playscript with stage directions body 20A on the substrate W.Peripheral part Wb is placed on the inside dielectric part 26 of second part 22.Therefore because the top surface of inner dielectric part 26 is continuous and concordant each other with the first metal surface 21a, can prevent to form the gap between the rear surface of substrate W and the platform 20.The end surfaces of substrate W rises the surface against the step between inner dielectric part 26 and the outer dielectric part 27 to be placed.This allows substrate W accurately to locate.The top surface of substrate W (front) is concordant with the top surface of outer dielectric part 27.
Next, travel mechanism's 40 driving machining cells 10 are gone up mobile in the direction (towards the direction on the right side) of the arrow of Fig. 2.Then, as shown in Figure 3, high-field electrode 11 enters the second moving range R2, and is relative with second part 22 at the second moving range R2 inner high voltage electrode 11.At this moment, give high-field electrode 11 supply voltages from power circuit 30.The moment of beginning voltage supply be preferably when high-field electrode 11 also do not arrive substrate W end portion the top and be positioned at (being preferably located in outer dielectric part 27 tops) in second part 22 top.This permission applies electric field between second metal 24 below high-field electrode 11 and the high-field electrode 11, and produces the atmos plasma discharge between second metal 24 below high-field electrode 11 and the high-field electrode 11.Originally the atmos plasma discharge only is created in the top of the outer dielectric part 27 of solid dielectric layer 25.As a result, can help away plasma discharge D2 in the generation of the outside of substrate W.At this moment, therefore outer dielectric part 27 helps the stability of discharging as the lip-deep solid dielectric layer of second metal 24.By dielectric constant and the thickness of suitably setting outer dielectric part 27, can make the discharging condition of normal plasma discharge D1 of discharging condition and substrate W top roughly the same, will illustrate this after a while.Because the top surface of the top surface of outer dielectric part 27 and substrate W is concordant each other, so the machining cell 10 at second place place and the gap between the outer dielectric part 27 can be identical with the gap between the substrate W with the machining cell 10 at primary importance place.The flox condition of the processing gas when this allows the normal plasma discharge D1 of the flox condition of the processing gas when helping away discharge D2 and explanation after a while is roughly the same.
As shown in Figure 4, when on the direction of machining cell 10 at arrow when mobile, high-field electrode 11 is moved into the top of the peripheral part Wb that also is positioned at substrate W.This causes helping away discharge D2 to extend to the top of the peripheral part Wb of substrate W.Processing gas is directed to and helps away region of discharge D2, and the front of the peripheral part Wb of substrate is by plasma process.At this moment, the peripheral part Wb of substrate together as the lip-deep solid dielectric layer of second metal 24, therefore helps the stability of discharging in company with inner dielectric part 26.
Although this moment, electrode 11 was positioned to across outer dielectric part 27 and inner dielectric part 26, but prevent that second metal 24 is subjected to the impact of creeping discharge (creeping discharge) etc. because second metal 24 by continuously and the outer dielectric part 27 that integrally forms and inner dielectric part 26 cover fully.
The peripheral part Wb of substrate and the total dielectric constant of inner dielectric part 26 also are different from the dielectric constant of the main part Wa that substrate is only arranged somewhat different than the dielectric constant that outer dielectric part 27 is only arranged.This causes the discharging condition of normal plasma discharge D1 of top of main part Wa of the discharging condition that helps away discharge D2 of the discharging condition of peripheral part top and outer dielectric part 27 tops or substrate slightly different.Then, this can not throw into question, because the quality of the condition of the peripheral part Wb of substrate and product is uncorrelated.
As shown in Figure 5, when being moved further on the direction of machining cell 10 at arrow, the position that high-field electrode 11 arrives across the end portion of the second moving range R2 and the first moving range R1.This causes applying electric field between the end portion of high-field electrode 11 and first part 21.As a result, between the end portion Wae (part that links to each other with peripheral part Wb) of the main part Wa of machining cell 10 and substrate W, produce normal atmosphere (An) plasma discharge D1.Processing gas is directed into normal plasma discharge district D1, and the end portion Wae of the main part of substrate W is by plasma process.
Begin normal plasma process (regularplasma processing) from the end portion Wae of the main part of substrate W.When normal plasma process began, the overlapping region between high-field electrode 11 and first part 21 was less.Therefore regular picture district D1 is narrower.On the other hand, at this moment, high-field electrode 11 is also relative with second part 22.Therefore, between high-field electrode 11 and second part 22, keep electric field.Still produce and help away discharge D2.This prevents that electric field from only concentrating on the narrow regular picture district D1.When like this, having prevented that normal plasma process from beginning to the infringement of power circuit 30.The discharging condition of the top of the end portion Wae of the main part of substrate W is stabilized.Before normal plasma discharge D1, the discharge D2 that helps away of second part 22 top raises the temperature of electrode 11.This causes ceramic solid dielectric sheet 13 to be dried is the good preparation of discharging.This makes the discharging condition of top of end portion Wae of main part of substrate W further stable.In addition, be continuous because help away region of discharge D2 and regular picture district D1, plasma can be communicated with between the D2 at these two region of discharge D1.As a result, can on whole region of discharge, obtain roughly plasma uniformly.The end portion Wae of the main part of this permission substrate W is processed in the mode identical with the mid portion of substrate W, therefore improves the uniformity of processing.
As shown in Figure 6, machining cell 10 is moved further on the direction of arrow.Then, entire electrode 11 only is positioned at the first moving range R1 relative with first part 21.Produce normal plasma discharge D1 between electrode 11 in the first moving range R1 and the main part Wa of substrate W so as the main part Wa that allows substrate W by plasma process.At this moment, the main part Wa of the substrate W solid dielectric layer that acts on first part 21.This has eliminated the necessity of solid dielectric layer on the first metal surface 21a has been set, and has therefore reduced manufacturing cost.Like this, platform 20 can easily expand the increase of the area of accommodating substrates W to.
Machining cell 10 is being moved further on the direction of arrow so that arrive the top of the end portion on the opposite side (right side that Fig. 6 is total) of platform 20.Like this, the entire body part Wa of substrate W can be by plasma process.
Machining cell 10 can be as required in the reciprocating motion that makes progress of right and left.
After finishing processing, machining cell 10 retreats into the outside of platform 20, removes substrate W.
Below an alternative embodiment of the invention will be described.Identical reference marker is used for representing the element components identical with previous embodiment, and the detailed description of omitting these elements.
Fig. 7 shows the second embodiment of the present invention.In this embodiment, the basal surface of the inside dielectric part 26 of solid dielectric layer 25 is the inclined surfaces that are tilted to inner end portion (with outer dielectric part 27 opposite sides) up.Inner dielectric part 26 has triangular cross-sectional configuration, and the thickness of this triangular cross-sectional configuration reduces towards inner end portion.Then, the total dielectric constant of inner dielectric part 26 and the peripheral part Wb that is placed on the substrate W on the inner dielectric part 26 little by little reduces so that the more approaching DIELECTRIC CONSTANT that substrate W is only arranged towards the inner end portion of inner dielectric part 26 w
Like this, the plasma discharge condition that helps away region of discharge D2a of the peripheral part Wb of substrate W top can be little by little more approaching towards the condition of the normal plasma discharge D1 of the main part Wa of substrate.This discharging condition that prevents the boundary between the end portion Wae of the main part of peripheral part Wb and substrate W is discontinuous, makes the discharging condition of end portion Wae of main part of substrate W further stable, therefore further improves the uniformity of processing.
Fig. 8 shows the third embodiment of the present invention.In this embodiment, second metal 24 of second part 22 is formed by the metal that is independent of playscript with stage directions body 20A, and aforementioned playscript with stage directions body 20A constitutes first part 21.The inner end portion of second metal 24 and first part 21 against and directly contact.Ground wire is arranged in first part 21.Second metal 24 through first part 21 electrical ground.Alternatively, ground wire can be directly connected to second metal 24.
The inside dielectric part 26 of solid dielectric layer 25 and outer dielectric part 27 form independently.Inner dielectric part 26 is made by potteries such as aluminium oxide, and has the mount structure in L shaped cross section.The peripheral part Wb of substrate W is placed to against the inner dielectric part 26 of shaped as frame.
The step that is used for assembling inner dielectric part 26 thereon is formed on top surface interior distolateral of second metal 24.
The solid dielectric sheet that outer dielectric part 27 is made up of pottery etc., and be placed on the top surface of second metal 24.Outer dielectric part 27 can be the coating film that sprays on the top surface of second metal 24.The dielectric constant of the solid dielectric of formation outer dielectric part 27 is less than the dielectric constant of substrate W.The thickness of outer dielectric part 27 is less than the thickness of substrate W.Therefore, the ratio of thickness/dielectric constant of the ratio of the thickness/dielectric constant of outer dielectric part 27 and substrate W is roughly the same.The top surface of second metal 24 is positioned to be higher than the first metal surface 21a, thereby makes that the top surface of outer dielectric part 27 is concordant with the top surface of substrate W.
Fig. 9 shows the fourth embodiment of the present invention.In first to the 3rd embodiment, second metal 24 is positioned to across the rear portion of the outer dielectric part 27 of solid dielectric layer 25 and the rear portion of inner dielectric part 26.On the other hand, in the 4th embodiment, second metal 24 only is arranged on the place, rear portion of outer dielectric part 27.It can be the rear portion that the metal of grounding electrode is arranged on inner dielectric part 26.Second metal 24 is separated with the distance corresponding with the width of inner dielectric part 26 and first part 21.Ground wire is connected to second metal 24 that is independent of first part 21.
According to the 4th embodiment, help away discharge D2 only externally the top of dielectric part 27 produce, above the inner dielectric part 26 or the peripheral part Wb of substrate W above do not produce.On the other hand, electrode 11 is wide is positioned to across the position of outer dielectric part 27 tops and the position of first part 21 top to being enough to.Therefore, when between the end portion of the end portion (right end portion among Fig. 9) at the place, front portion of the traffic direction of electrode 11 and first part 21, applying electric field, still between the end portion (left end portion among Fig. 9) at the place, rear portion of the traffic direction of electrode 11 and second metal 24, apply electric field.The discharge D2 that helps away of outer dielectric part 27 tops produces continuously.Therefore, electric field is not concentrated in the top of the end portion of first part 21.In addition, before above the end portion that arrives first part 21, the end portion at place, the front portion of the traffic direction of electrode 11 is by the top of outer dielectric part 27.In the time of above by outer dielectric part 27, the end portion at place, the front portion of the traffic direction of electrode 11 is helped away discharge D2 heating, and the end portion at place, the front portion of the traffic direction of solid dielectric sheet 13 is dried.This helps the stable plasma discharge D1 of generation above the end portion Wae of the main part Wa of substrate W, has therefore improved the suitable Surface Machining of end portion Wae.
Figure 10 shows the fifth embodiment of the present invention.The machining cell 10 of the atmospheric plasma process equipment M of the 5th embodiment comprises three (a plurality of) high- field electrodes 11,11,11.In order to distinguish this three electrodes 11,11,11, the electrode on the right is called 11A, and middle electrode is called 11B, and the electrode on the left side is called 11C (seeing Figure 11-15).
Each electrode 11 has quadrangular section and extends on the direction perpendicular to the diagram plane of Figure 10.Solid ceramic dielectric layer (not shown) as solid dielectric layer is arranged on the lower surface of each electrode 11.Three electrodes 11,11,11 make progress uniformly-spaced to arrange on the right side and left.
Three electrodes 11 are connected to common power circuit 30.Power circuit 30 is used to produce the atmos plasma discharge for electrode 11 supply voltages.Power circuit 30 has three (a plurality of) switch blocks 31 corresponding with electrode 11.Switch block 31A is connected to electrode 11A.Switch block 31B is connected to electrode 11B.Switch block 31C is connected to electrode 11C (seeing Figure 11-15).
Make progress gap between the electrode adjacent one another are 11,11 greater than the lower surface (lower surface of the solid dielectric layer of each electrode 11) of machining cell 10 and the actual gap between the platform 20 at the right side and left.
First part 21 of platform 20 and forms by metal independently than the second metal part 24 that first part 21 further is positioned at second part 22 in the outside, and adjacent one another are be connected to each other.Second metal 24 through first part 21 electrical ground.Alternatively, second metal 24 can be directly connected to ground wire, and not by first part 21.
Constituting first metal of first part 21 and second metal 24 of second part 22 can integrally and continuously form.Platform 20 can comprise metal playscript with stage directions bodies such as aluminium, and solid dielectric layer 25 covers the mid portion (further being positioned at inboard part than peripheral part) as the playscript with stage directions body of first metal 21 (first part) with exposed surface and is used as the peripheral part of the playscript with stage directions body of second metal 24.
The width that the width (width of the peripheral part Wb of substrate) that the inside dielectric part 26 of second part 22 makes progress at right and left makes progress at right and left less than each electrode 11.
The width that the width that outer dielectric part 27 makes progress at right and left makes progress at the right side and left greater than each electrode 11, and less than the distance between the right end portion of the left end portion of left electrode 11C and right electrode 11A.
Second metal 24 of second part 22 must not be arranged on the rear side (lower surface) of inner dielectric part 26, goes up as long as be arranged on the rear side (lower surface) of outer dielectric part 27.Inner dielectric part 26 and outer dielectric part 27 can form independently, and can have different dielectric constant values.
The outer end portion of the solid dielectric layer 25 of the outer end portion of second metal 24 and second part 22 is concordant each other.Dielectric substance systems such as resin housing, promptly the 3rd part 23 is arranged on the outer surface of second metal 24 and solid dielectric layer 25.
Alternatively, outer dielectric part 27 comparable second metals 24 of solid dielectric layer 25 protrude more outwardly.
In addition, in the 5th embodiment, three electrodes 11,11,11 that travel mechanism 40 drives machining cell 10 move back and forth on (perpendicular to the direction longitudinally of electrode 11) integratedly on the right side and left.Shown in Figure 11-15, the moving range of each electrode 11 comprises the first moving range R1 relative with first part 21, the second moving range R2 relative with second part 22 and the three moving range R3 relative with the 3rd part 23.
Alternatively, machining cell 10 and electrode 11,11,11 can be fixed, and travel mechanism 40 can be connected to platform 20, thereby make platform 20 upwards reciprocally to move at right and left.
Come the surface of process substrate W for the atmospheric plasma process equipment M that utilizes the 5th embodiment, as shown in figure 11, at first, all switch block 31A-31Cs corresponding with electrode 11A-11C set disconnection for, machining cell 10 retreats into the outside (for example left side) of second part 22 of platform 20 at least, and substrate W is placed on the platform 20.For more concrete, substrate W further is positioned at inboard main part Wa than peripheral part Wb and is placed on the first metal surface 21a of first part 21, and peripheral part Wb is placed on the inside dielectric part 26 of second part 22.Because the top surface of the first metal surface 21a and inner dielectric part 26, therefore can prevent to form the gap continuously and concordant each other between the rear surface of substrate W and platform 20.The end surfaces of substrate W is against the step rise surface of living between inner dielectric part 26 and the outer dielectric part 27.Therefore, substrate W can accurately locate.The top surface of substrate W (front) becomes concordant with the top surface of outer dielectric part 27.
Next, travel mechanism's 40 driving machining cells 10 are gone up mobile in the direction of arrow (towards the direction on the right side) of Figure 11.
In the process that moves, as shown in figure 12, right electrode 11A arrives across corresponding to the second moving range R2 of second part 22 with corresponding to the precalculated position of the 3rd moving range R3 of the 3rd part 23.In this pre-position, about percent 30-70 of electrode 11A is positioned at the second moving range R2, and the remainder of electrode 11A is positioned at the 3rd moving range R3.Preferably, about percent 50 of electrode 11A is positioned at the second moving range R2, and the remainder of electrode 11A is positioned at the 3rd moving range R3.At this moment, switch block 31A sets closure for so that begin voltage supply from power circuit 30 to right electrode 11A.This causes applying electric field between second metal 24 of right electrode 11A and second part 22.Because right electrode 11A percent 30 or more, preferably percent 50 relative with second metal 24, therefore comes the direction of the electric field of self-electrode 11A accurately to be guided to second metal 24.This prevents that abnormal discharge is applied to hardware on every side from electrode 11A.When the outside of entire electrode 11A, do not apply voltage at the second moving range R2.Even, do not apply voltage, as long as electrode 11A is positioned at the left side in precalculated position when the part of electrode 11A is positioned at the second moving range R2 yet.Only when arriving the precalculated position, electrode just begins the voltage supply.This prevents from the outer end portion of the electric field concentration of local of self-electrode 11A to second metal 24, therefore prevents the infringement to solid dielectric layer 25.
Applying of above-mentioned electric field causes producing the atmos plasma discharge between right electrode 11 and outer dielectric part 27.This causes helping away plasma discharge D2 in the generation of the outside of substrate W.At this moment, second metal, 24 usefulness act on the grounding electrode of electrode 11.Therefore outer dielectric part 27 helps the stability of discharging as the solid dielectric layer on the second metal surface 24a.By thickness and the dielectric constant of suitably setting outer dielectric part 27, can make the discharging condition of normal plasma discharge D1 of discharging condition and substrate W top roughly the same, after a while to its explanation.Because the top surface of the top surface of outer dielectric part 27 and substrate W is concordant each other, therefore can make the machining cell 10 at second place place identical with the machining cell 10 at primary importance place with the gap between the substrate W with the gap between the outer dielectric part 27.This allows to help away the flox condition of processing gas at discharge D2 place roughly the same with the flox condition of the processing gas at normal plasma discharge D1 place, after a while to its explanation.
When electrode 11A percent 70 or begin to help away discharge D2 when still less being placed in the second moving range R2.This has eliminated second part 22 has been made unnecessarily wide necessity.
Remain closed so that when continuing to give right electrode 11A supply voltage at switch block 31A, machining cell 10 is further towards moving right.When right electrode 11A when moving right, help away region of discharge D2 also towards moving right between electrode 11A and second part 22.Then, as shown in figure 13, target 11B arrives the precalculated position across the second moving range R2 and the 3rd moving range R3.At this moment, switch block 31B sets closure for and gives target 11B supply voltage so that begin from power circuit 30.This permission applies electric field between the target 11B and second metal 24, prevent simultaneously from the abnormal discharge of target 11B and concentrating of electric field, therefore produces between target 11B and outer dielectric part 27 and helps away discharge D2.
As switch block 31A, 31B remains closed respectively so that when continuing to give right electrode 11A and target 11B supply voltage, and machining cell 10 is further towards moving right.When machining cell 10 when moving right, helping away between right electrode 11A and second part 22 helps away region of discharge D2 also towards moving right between region of discharge D2 and target 11B and second part 22.Then, as shown in figure 14, left electrode 11C arrives the precalculated position across the second moving range R2 and the 3rd moving range R3.At this moment, switch block 31C sets closure for and gives left electrode 11C supply voltage so that begin from power circuit 30.This permission applies electric field between the left electrode 11C and second metal 24, prevent from simultaneously to concentrate from undesired discharge and the electric field of left electrode 11C, therefore produces between left electrode 11C and outer dielectric part 27 and helps away discharge D2.
As mentioned above, when each electrode 11A, 11B, 11C further navigate to the 3rd moving range R3 side than the precalculated position across the second moving range R2 and the 3rd moving range R3, not to electrode supply voltage.When electrode arrives the precalculated position, begin therefore to produce and help away discharge D2 to electrode supply voltage.When electrode further navigates to the first moving range R1 side than the precalculated position, continue supply voltage then so that keep discharge.
As shown in figure 14, the roughly the same time that arrives the precalculated position at left electrode 11C is located, and right electrode 11A arrives the top of the peripheral part Wb of substrate W.This causes, and generation helps away discharge D2 between the peripheral part Wb of right electrode 11A and substrate.Processing gas is directed between the peripheral part Wb of right electrode 11A and substrate, and the front of the peripheral part Wb of substrate is by plasma process then.At this moment, the peripheral part Wb of substrate together as the lip-deep solid dielectric layer of second metal 24, therefore helps the stability of discharging in company with inner dielectric part 26.
Here, the peripheral part Wb of substrate and the total dielectric constant of inner dielectric part 26 be somewhat different than the dielectric constant that outer dielectric part 27 is only arranged, also somewhat different than the dielectric constant of the main part Wa that substrate is only arranged.This means the discharging condition of the condition of discharge D2b somewhat different than the normal plasma discharge D1 of the top of the main part Wa of the discharging condition that helps away discharge D2 of outer dielectric part 27 tops or substrate.Yet this can not cause problem, because the quality of the condition of the peripheral part Wb of substrate and product is irrelevant.
As shown in figure 14, right electrode 11A arrives the position across the second moving range R2 and the first moving range R1.Therefore, also between the end portion of right electrode 11A and first part 21, apply electric field.As a result, between the end portion Wae of the main part Wa of right electrode 11A and substrate W (and peripheral part Wb have a common boundary part), produce normal atmosphere (An) plasma discharge D1.Processing gas is directed to normal plasma discharge district D1, and the end portion Wae of the main part of substrate is by plasma process.
When the normal plasma process of beginning platform, still produce and help away discharge D2 or D2b between electrode 11A and second part 22.This prevents that electric field from concentrating on narrow regular picture district D1.This prevents the infringement to power circuit 30, and is used to make the discharging condition of top of end portion Wae of main part of substrate stable.Before normal plasma discharge D1, the discharge D2 that helps away of second part 22 top rises the temperature of electrode 11A.This causes the lip-deep ceramic solid dielectric layer (not shown) of electrode 11A to be dried is the good preparation of discharging.This makes the discharging condition of top of end portion Wae of main part of substrate further stable.To help away region of discharge D2 (comprising D2b) and regular picture district D1 be continuous because the discharge of electrode 11A limits, so plasma can be communicated with between the D2 at these two region of discharge D1.Can obtain roughly uniform plasma.Like this, the end portion Wae of the main part of substrate can be processed in the mode identical with the mid portion of substrate W, therefore realizes the uniformity of processing.
Machining cell 10 is being moved further on the direction on the right side, and whole right electrode 11A is positioned in the first moving range R1, and target 11B is positioned to across the second moving range R2 and the first moving range R1.Then, between the peripheral part Wb of target 11B and substrate, produce plasma discharge D2b, then further, between the end portion Wae of the main part of target 11B and substrate, produce plasma discharge D1
Subsequently, whole target 11B is positioned in the first moving range R1, and left electrode 11C is positioned to across the second moving range R2 and the first moving range R1.Then, between the peripheral part Wb of left electrode 11C and substrate, produce plasma discharge D2b, then further, between the end portion Wae of the main part of left electrode 11C and substrate, produce plasma discharge D1.
Then, as shown in figure 15, whole machining cell 10 is positioned in the first moving range R1, apply electric field between in electrode 11A, 11B, 11C each and first part 21, produce normal plasma discharge D1 then between the main part Wa of each in electrode 11A, 11B, 11C and substrate.This surface of part of main part Wa that allows to be positioned at the substrate below electrode 11A, 11B, the 11C is by plasma process.At this moment, the substrate W solid dielectric layer that acts on first part 21.This has eliminated the necessity that solid dielectric layer is set on the first metal surface 21a, therefore reduced manufacturing cost.Like this, platform 20 can easily expand the increase of the area of accommodating substrates W to.
The end portion of machining cell 10 on the opposite side (right side among Figure 10) that is moved further on the direction of arrow to platform 20.Although not shown, in the end portion on opposite side, when each electrode arrived precalculated position across the second moving range R2 and the 3rd moving range R3, corresponding switch block 31 was set disconnection for, and stops the voltage supply to electrode 11.
When each electrode 11 arrives precalculated position across the first moving range R1 and the second moving range R2, can stop voltage supply to the electrode of the top of the end portion on the opposite side of platform 20.
When the end portion on the opposite side of all electrodes arrival platforms 20, entire substrate W is by plasma process.
Machining cell 10 can upwards move back and forth at right and left as required.
After finishing processing, machining cell 10 retreats into the outside of platform 20, removes substrate W.
As shown in figure 16, the width that the width that each electrode 11,11,11 makes progress at the right side and left makes progress at the right side and left less than second part 22, and the width that makes progress at right and left less than the second moving range R2.Therefore, have such zone, the whole width of electrode 11 is positioned in the second moving range R2 in this zone.Therefore, setting voltage supply precalculated position constantly can be on the direction of the first moving range R1, be positioned to whole width that position across the second moving range R2 and the 3rd moving range R3 moves to electrode 11 from electrode 11 and be positioned at position in the second moving range R2.In other words, begin the voltage supply of electrode 11 in the time of can being positioned at the second moving range R2 at the whole width of electrode 11 and help away the generation of discharge.
Like this, the direction of the electric field of self-electrode 11 can guarantee to guide second metal 24 to second part 22 when the voltage supply begins.Therefore can prevent from definitely to produce undesired discharge from electrode 11.Simultaneously, the electric field on the part that can avoid definitely grading in the outer end of second metal concentrates.
In the 6th embodiment shown in Figure 17, machining cell 10 only comprises an electrode 11.The width that the width that electrode 11 makes progress at right and left makes progress at the right side and left greater than each the electrode utmost point 11A among the 5th embodiment, 11B, 11C, and the width that makes progress at the right side and left greater than second part 22.Therefore, when the fore-end (right end portion) of the traffic direction of electrode 11 arrives near the point before the first moving range R1, the rear end part of the traffic direction of electrode 11 (left end portion) is still in the 3rd moving range R3, and electrode 11 is positioned to across the second moving range R2 and the 3rd moving range R3 (seeing Figure 18).
Power circuit 30 only comprises a switch block 31, and electrode 11 is connected to power circuit 30 by this switch block 31.
In the 6th embodiment, when single wide electrode 11 was positioned in the 3rd moving range R3, switch block 31 was set disconnection for, stopped the voltage supply to electrode 11.The direction of arrow (towards the direction on the right side) at Figure 17 goes up mobile, when electrode 11 arrives precalculated position across the second moving range R2 and the 3rd moving range R3, switch block 31 is set closure for, begin to electrode 11 supply voltages, help away discharge D2 so that between electrode 11 and second part 22, produce.The precalculated position can be set such position for, and for example roughly percent 30-70 at the wide electrode 11 in this position is positioned at the second moving range R2, and the remainder of wide electrode 11 is positioned at the 3rd moving range R3.When wide electrode 11 reaches the precalculated position, the supply of beginning voltage.Preferably, as shown in figure 17, the precalculated position can be the position that roughly percent 50 remainders that are positioned at the second moving range R2 and wide electrode 11 of wide electrode 11 are positioned at the 3rd moving range R3.When wide electrode 11 arrives the precalculated position, the supply of beginning voltage.Like this, can prevent definitely that leniently electrode 11 produces undesired discharge and prevents electric field concentrating on the outer end portion of second metal 24.
More preferably, as shown in figure 18, the precalculated position is set wide electrode 11 for and is positioned near the position before the first moving range R1, and when wide electrode 11 arrives the precalculated position, the supply of beginning voltage.Like this, can prevent definitely further that leniently electrode 11 produces undesired discharge and prevents electric field concentrating on the outer end portion of second metal 24, therefore further improve fail safe.
When wide electrode 11 is positioned to more to be positioned at the first moving range R1 side than the precalculated position, continue the voltage supply.Like this, the surface of substrate W can be by plasma process.
The invention is not restricted to the foregoing description, various variation examples can be arranged.
For example, article W to be processed is unnecessary to be made up of dielectric substance fully, as long as mainly form by dielectric substance, particularly, as long as work surface (surface) mainly is made up of dielectric substance.Some metals can be set from the teeth outwards.Metal can be embedded among the article W to be processed, and this will not cause any problem substantially, and is outside as long as metal is not exposed to.This article W can comprise the liquid crystal panel that constitutes LCD and the panel and the module of Liquid Crystal Module and formation plasma display, organic electroluminescence display (organic electroluminescence display) and field-emitter display (fieldemission display).
The unnecessary whole exposures in the metal surface of first part 21 need only the metal surface that first part 21 has exposure.The part of metal surface can be coated with solid dielectric layer or not be used as the insulator (for example band that uses in the semiconductor applications, paint or insulation film) of solid dielectric layer.Here " solid dielectric layer " refers to be coated in the fixedly dielectric on the metallic object of electrode, and is used to prevent that arc discharge undesired discharges such as (arc discharge) is so that obtain stable glow discharge (glowdischarge).
The different characteristic of first to the 6th embodiment is capable of being combined.For example, the solid dielectric layer 25 of single member of first or second embodiment can with first part 21 that forms independently and 24 combinations of second metal of the 3rd embodiment.The inside dielectric part 26 of the 3rd embodiment can form as second embodiment and make its width reduce towards its inner (with the opposite side of outer dielectric part 27).And the thickness of the outer dielectric part 27 of the 3rd embodiment and dielectric constant can make thickness and dielectric constant greater than substrate W as first embodiment.
In the 5th embodiment, the quantity of electrode needn't be required to be one or three.Also can use two or more than four electrode.Preferably, the edge is with respect to arranging two or more electrodes on the direction that relatively moves of platform.One in two or more electrodes is used as first electrode, and another electrode that is arranged in its back (in the 3rd moving range side) on the direction that relatively moves is as second electrode.
In the 5th embodiment, each that can be in a plurality of electrodes is provided with power circuit 30.The power circuit that is used for first electrode is first power circuit, and the power circuit that is used for second electrode is the second source circuit.Certainly, as shown in figure 10, first power circuit and second source circuit can be realized by a common power circuit.
[industrial applicability]
For example, the present invention can be applicable to use plasma pair in making Semiconductor substrate or liquid crystal substrate The surface of substrate is cleaned, modification (property modification) (hydrophilicization, hydrophobicization Deng), film processed, etching, polishing etc.

Claims (19)

1. plasma processing equipment, this plasma process equipment discharges and processes the surface of article to be processed by article to be processed being exposed to approximate atmos plasma, and these article to be processed mainly are made up of dielectric substance, and described equipment comprises:
Platform, described comprises first part and second part, described first part has first metal surface of exposure, described second part has second metal surface of the solid dielectric layer of being coated with and is arranged on the neighboring part of described first part, described article to be processed are placed on described first metal surface of described first part, thereby make that the peripheral part of described article to be processed is protruding in described second part; With
Electrode, described electrode relatively moves in the scope that comprises first moving range and second moving range with respect to described, described electrode is relative with described first part so that produce described plasma discharge in first moving range, and described electrode is relative with described second part in described second moving range.
2. according to the plasma processing equipment of claim 1, the thickness of the described solid dielectric layer of wherein said second part and dielectric constant are arranged so that between described electrode in described second moving range and described second part and produce described plasma discharge.
3. according to the plasma processing equipment of claim 1, the described solid dielectric layer of wherein said second part comprises inner dielectric part and outer dielectric part, the peripheral part of described article will be placed on the inner dielectric part, described outer dielectric partly is arranged on the opposite side relative with described first part of described inner dielectric part, and described outer dielectric part is more protruded than the described peripheral part of described article; And
Wherein, described at least outer dielectric part is provided with and covers described second metal surface corresponding to described second metal surface in described inner dielectric part and the described outer dielectric part.
4. according to the plasma processing equipment of claim 3, the thickness of wherein said outer dielectric part and dielectric constant are set between the described electrode that makes in described second moving range and the described outer dielectric part and are produced described plasma discharge.
5. according to the plasma processing equipment of claim 3, the thickness of the thickness of wherein said outer dielectric part and the ratio of dielectric constant and described article and the ratio of dielectric constant are roughly the same.
6. according to the plasma processing equipment of claim 3, wherein said electrode has on the described direction that relatively moves the width across described outer dielectric part and described first part.
7. according to the plasma processing equipment of claim 3, wherein said first metal surface is more protruding in described electrode than described second metal surface; And
Wherein said outer dielectric part is more protruding in described electrode than described first metal surface.
8. according to the plasma processing equipment of claim 3, the more protruding protrusion amount and the thickness of described article to described electrode in described first metal surface of surface ratio of wherein said outer dielectric part is roughly the same.
9. according to the plasma processing equipment of claim 3, the surface of wherein said inner dielectric part is concordant with described first metal surface.
10. according to the plasma processing equipment of claim 3, the thickness of wherein said inner dielectric part reduces towards described first part.
11., wherein between described inner dielectric part and described outer dielectric part, form step according to the plasma processing equipment of claim 3.
12. according to the plasma processing equipment of claim 3, wherein said inner dielectric part and described outer dielectric partial continuous and formation integrally.
13. according to the plasma processing equipment of claim 1, wherein said comprises metal playscript with stage directions body;
Wherein further be positioned at inboard part and comprise first metal surface of described exposure, so that constitute described first part than the peripheral part of described playscript with stage directions body; And
The described peripheral part of wherein said playscript with stage directions body comprises described second metal surface that is coated with described solid dielectric layer, and the described peripheral part of described playscript with stage directions body and described solid dielectric layer constitute described second part.
14. plasma processing equipment according to claim 1, wherein said electrode relatively moves in the scope that comprises described first moving range, described second moving range and the 3rd moving range, and described the 3rd moving range is positioned on the opposite side relative with described first moving range of described second moving range;
Wherein said equipment also comprises power circuit; And
Wherein described electrode through described second moving range from described the 3rd moving range when described first moving range moves, when described electrode arrives the precalculated position, described power circuit begins to be used for described plasma discharge to described electrode supply voltage, and described precalculated position is positioned at and makes described positioning of electrode become across the position of described second moving range and described the 3rd moving range and make described positioning of electrode between near the position before described first moving range.
15. according to the plasma processing equipment of claim 14, wherein in described pre-position, about percent 30-70 of described electrode is arranged in described second moving range, the remainder of described electrode is arranged in described the 3rd moving range.
16. according to the plasma processing equipment of claim 14, wherein in described pre-position, about percent 50 of described electrode is arranged in described second moving range, the remainder of described electrode is arranged in described the 3rd moving range.
17. according to the plasma processing equipment of claim 14, wherein said electrode is littler than the width of described second part on the described direction that relatively moves at the width on the described direction that relatively moves; And
Wherein said precalculated position is described entire electrode is positioned at described second moving range on Width position.
18. according to the plasma processing equipment of claim 14, wherein said also comprises the 3rd part, described the 3rd part has insulation characterisitic and is positioned on the opposite side relative with described first part of described second part; And
Wherein when described electrode was arranged in described the 3rd moving range, described electrode was relative with described the 3rd part.
19. atmos plasma process equipment, this atmos plasma process equipment discharges and processes the surface of article to be processed by article to be processed being exposed to approximate atmos plasma, these article to be processed mainly are made up of dielectric substance, and described equipment comprises:
Platform, described comprises first part and second part, described first part has first metal surface of exposure, described second part has second metal surface of the solid dielectric layer of being coated with and is arranged on the neighboring part of described first part, described article to be processed are placed on described first metal surface of described first part, thereby make that the peripheral part of described article to be processed is protruding in described second part;
First electrode, described first electrode relatively moves in the scope that comprises first moving range, second moving range and the 3rd moving range with respect to described, described electrode is relative with described first part in first moving range, described electrode is relative with described second part in described second moving range, and described the 3rd moving range is positioned on the opposite side relative with described first moving range of described second moving range;
Second electrode, described second positioning of electrode becomes than more close described the 3rd moving range side of described first electrode, and described second electrode and described first electrode relatively move in the scope that comprises described first moving range, described second moving range and described the 3rd moving range with respect to described integratedly;
First power circuit, entering between moving period when described first electrode arrives first precalculated position, described first power circuit begins to be used for described plasma discharge to described first electrode supply voltage, enter first and second electrodes described in the motion and move towards described first moving range from described the 3rd moving range through described second moving range described, described first precalculated position is positioned at and makes described first positioning of electrode become across the position of described second moving range and described the 3rd moving range and make described first positioning of electrode between near the position before described first moving range; With
The second source circuit, enter between moving period when described second electrode arrives second precalculated position described, described second source circuit begins to be used for described plasma discharge to described second electrode supply voltage, and described second precalculated position is positioned at and makes described second positioning of electrode become across the position of described second moving range and described the 3rd moving range and make described second positioning of electrode between near the position before described first moving range.
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