CN107911096A - Chip with four wave filters operated using surface acoustic wave - Google Patents
Chip with four wave filters operated using surface acoustic wave Download PDFInfo
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- CN107911096A CN107911096A CN201711281134.5A CN201711281134A CN107911096A CN 107911096 A CN107911096 A CN 107911096A CN 201711281134 A CN201711281134 A CN 201711281134A CN 107911096 A CN107911096 A CN 107911096A
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- filter
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- 238000010897 surface acoustic wave method Methods 0.000 title claims abstract description 27
- 238000005538 encapsulation Methods 0.000 claims description 24
- 238000001914 filtration Methods 0.000 claims description 15
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 101001128814 Pandinus imperator Pandinin-1 Proteins 0.000 claims description 2
- 238000010276 construction Methods 0.000 description 30
- 238000003780 insertion Methods 0.000 description 9
- 230000037431 insertion Effects 0.000 description 9
- 230000005540 biological transmission Effects 0.000 description 6
- 230000008878 coupling Effects 0.000 description 6
- 238000010168 coupling process Methods 0.000 description 6
- 238000005859 coupling reaction Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 235000013399 edible fruits Nutrition 0.000 description 3
- 230000002349 favourable effect Effects 0.000 description 3
- 230000009977 dual effect Effects 0.000 description 2
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- 101001024685 Pandinus imperator Pandinin-2 Proteins 0.000 description 1
- 101100381996 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) BRO1 gene Proteins 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
- H03H9/6423—Means for obtaining a particular transfer characteristic
- H03H9/6433—Coupled resonator filters
- H03H9/6436—Coupled resonator filters having one acoustic track only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
- H03H9/72—Networks using surface acoustic waves
- H03H9/725—Duplexers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
- H03H9/72—Networks using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/0023—Networks for transforming balanced signals into unbalanced signals and vice versa, e.g. baluns, or networks having balanced input and output
- H03H9/0028—Networks for transforming balanced signals into unbalanced signals and vice versa, e.g. baluns, or networks having balanced input and output using surface acoustic wave devices
- H03H9/0033—Networks for transforming balanced signals into unbalanced signals and vice versa, e.g. baluns, or networks having balanced input and output using surface acoustic wave devices having one acoustic track only
- H03H9/0038—Networks for transforming balanced signals into unbalanced signals and vice versa, e.g. baluns, or networks having balanced input and output using surface acoustic wave devices having one acoustic track only the balanced terminals being on the same side of the track
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders or supports
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders or supports
- H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
- H03H9/0566—Constructional combinations of supports or holders with electromechanical or other electronic elements for duplexers
- H03H9/0576—Constructional combinations of supports or holders with electromechanical or other electronic elements for duplexers including surface acoustic wave [SAW] devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
The present invention relates to a kind of chip with four wave filters operated using surface acoustic wave, the chip (CH) has four wave filters (F1, F2, F3, F4) operated using surface acoustic wave and input port and output (EP1, EP2, AP1, AP2).Each wave filter (F1, F2, F3, F4) covers different frequency bands.Each port in input and output port (EP1, EP2, AP1, AP2) is all connected to one or two wave filter (F1, F2, F3, F4).
Description
The application be Application No. 201180053281.1, applying date 2011-11-3, it is entitled " have utilize
The divisional application of the application for a patent for invention of the chip for four wave filters that surface acoustic wave is operated ".
Technical field
The present invention relates to the chip with four wave filters operated using surface acoustic wave.
Background technology
Known such module：The module has four SAW (surface acoustic wave) wave filters, and in its input and output port also
With duplexer so that can drive four filtering via two input ports and two output ports in each case
Device.
The content of the invention
It is optimized the purpose of the present invention is simplifying known module, and for cost and space requirement.
This purpose is realized by chip as described below and by encapsulation as described below.The favourable implementation of the present invention
Example sees other records of the application.
According to the present invention, propose a kind of chip, the chip have four wave filters being operated using surface acoustic wave with
And input and output port.Each wave filter covers different frequency bands.Each port in input and output port is respectively connected to
One or two wave filter.Four wave filters are set on the chip as follows：So that two wave filter shapes
Into left column, and remaining two wave filters form right row；Each from two settings in four wave filters of a row
Into relative to each other；And the wave filter of two relative positionings is connected respectively to be arranged between two wave filters relative to each other
Output port, described two input ports include first input port and the second input port, in described two input ports
Each input port be connected to four wave filters being connected with the first output port of described two output ports
In one and four wave filters for being connected with the second output port of described two output ports in another；With
And described two wave filters are coupled to first in described two input ports, remaining two wave filters are coupled to institute
State second in two input ports, one in described two wave filters and one in remaining two wave filters
It is used to be respectively from a frequency band in low-frequency band, and one in described two wave filters and described remaining two
One in the wave filter frequency band that be used to be respectively from high frequency band；And each of four wave filters is
The receiving filter of receiving circuit.The present invention also provides one kind to encapsulate, including：Four filtering operated using surface acoustic wave
Device, four wave filters are set as follows：So that two formation left columns in four wave filters, and remain
Two remaining wave filters form right row, wherein being oppositely located relative to each other each from two in four wave filters of a row, institute
Wave filter is stated to be arranged on two or more chips；Each of four wave filters covers different frequency bands；Described four
Each of a wave filter is the receiving filter of receiving circuit, and the wave filter of two relative positionings is connected respectively to be arranged on two
Output port between a wave filter relative to each other；The chip has two input ports and two output ports, described
Two input ports include first input port and the second input port, described two output ports include the first output port and
Second output port；Each input port in described two input ports is connected to be connected with first output port
Four wave filters in one and four wave filters for being connected with second output port in another；
And described two wave filters are coupled to first in described two input ports, remaining two wave filters are coupled to
One in second in described two input ports, one in described two wave filters and remaining two wave filters
A frequency band that be used to be respectively from low-frequency band, and one in described two wave filters and described remaining two
One in a wave filter frequency band that be used to be respectively from high frequency band.
Furthermore it is possible to select the particularly advantageous arrangement of the wave filter on chip.For this purpose, four wave filters according to
Following manner is arranged on chip：So that two wave filters form left column, and remaining two wave filters form right row, and
Respectively two wave filters from different lines are oppositely located relative to each other.
Input and/or output port are connectable to two wave filters.In this case, they form duplexer.
As fruit chip has two inputs of two wave filters for being connected to one duplexer of each formation in each case
Port, then the two of left column wave filter is connectable to first input port, and two wave filters of right row are connectable to
Second input port.
As fruit chip has two outputs of two wave filters for being connected to one duplexer of each formation in each case
Port, then the wave filter of two relative positionings be each connectable to the output being arranged between two wave filters relative to each other
Port.
If the diplexer functionalities of four wave filters operated using surface acoustic wave are integrated in a chip,
Be possible in this manner come realize for space requirement it is completely different the advantages of.
This chip can be used in the transmission and receiving circuit of mobile phone.Input and/or output terminal such as fruit chip
Mouth is then set to duplexer, then can simplify the remaining components of transmission and receiving circuit.If for example, four wave filters
Input port is arranged to duplexer, then the component only has two input ports rather than four input ports.Input port leads to
Often alternatively antenna is individually connected to via switch.Chip is arranged to only there are two input ports to make it possible to less
Complicated and correspondingly more favourable switch is used to distinguish received frequency band.In outlet side, between chip and receiving circuit
The quantity of signal wire reduces half because of duplexing output port.
Each input port in two input ports be advantageously connected to the wave filter that is connected with the first output port with
And the wave filter being connected with the second output port.
In the first embodiment of the present invention, four SAW filters set on co-used chip substrate and embark on journey.
In a second embodiment, four wave filters are arranged to the form of 2 × 2 matrixes on chip.In this arrangement, two
A wave filter forms left column and remaining two wave filters form right row, and two wave filters of left column are connected to first input end
Mouthful, and two wave filters of right row are connected to the second input port.Each from different lines two wave filters in such case
Under be oppositely located relative to each other, two wave filters relative to each other be each connected to be arranged on two wave filters relative to each other it
Between output port.
Compared with first embodiment, this second embodiment has the advantages that.On the one hand, the letter on chip can be avoided
The intersection of number line.It is possible to form its a kind of length and width in addition, being arranged such that according to the wave filter of second embodiment
Ratio has the chip of characteristic advantageously.Only there is very big length according to the chip of first embodiment, but then
With small width.In the case of the chip according to second embodiment, the ratio of length and width is close to one.
The aspect ratio of second embodiment corresponds to for example closes 12（2 in 1）The mark used in the case of filter chip
Quasi- form.Commercially, many dual band mobile phones are known, wherein using with two for two different frequency bands
Close 1 filter chip in the 2 of SAW filter.The chip of second embodiment according to the invention has closes 1 wave filter with known 2
The identical size of chip and thus there is identical aspect ratio.Therefore, it is possible to close 1 wave filter core with according to the invention 4
Piece replaces 2 to close 1 filter chips without too many expense, and thus upgrade dual band mobile phone to form four frequency band moves
Phone.In contrast, if having the 4 of long length and small width to close 1 wave filter core using according to the first illustrative embodiment
Piece, then require bigger to change in terms of board design.
Since the size of the second illustrative embodiment corresponds to canonical form, thus existing instrument can be used in production and
For test chip.
Further, since the length and the ratio of width that change, second embodiment have more preferable mechanical stability.Due to by
Have according to the chip of second embodiment close to one length and the ratio of width, so specifically, it is for because of temperature fluctuation
Caused deformation is more insensitive.In the chip according to the first illustrative resilient embodiment, mechanical stress can rise.Due to
In the chip according to second embodiment, absolute dimension is reduced in terms of length, so reducing because thermal deformation can
The mechanical stress of rising.Improved mechanical stability causes more preferable reliability and the probability of malfunction reduced.
Therefore, it is that greater compactness of layout, improved reliability and use are existing according to the advantages of chip of second embodiment
There is the possibility of instrument.
Frequency space can be divided into high frequency band and low-frequency band.High and low-frequency band definition depends under each case what is used
Standard, and be initially purely arbitrary.A kind of possible define will be less than the frequency of 1GHz and distribute to low-frequency band, and by height
High frequency band is distributed in the frequency of 1GHz.Hereinafter, this definition is used as basis, but it is fixed not limit the invention to this
Justice.
Two frequency bands each covered in high frequency band in four SAW filters, and remaining two SAW filters are then
Each frequency band in covering low-frequency band.In this case, first input port is connectable to first in covering high frequency band
The wave filter of frequency band and the wave filter of the first band in covering low-frequency band.Correspondingly, the second input port is connectable to
Cover the wave filter of the second band in high frequency band and the wave filter of the second band in covering low-frequency band.
In outlet side, the first output port is connectable to two wave filters of two frequency bands in covering high frequency band, with
And second output port be connectable to covering low-frequency band in two frequency bands two wave filters.
Wave filter can cover such as four GSM frequency bands.These can be GSM 850 and the frequencies of GSM 900 in low-frequency band
Band and 1900 frequency band of the GSM 1800 in high frequency band and GSM.But the invention is not limited in the filtering for GSM frequency bands
Device.The present invention can also include for example for according to UMTS standard come the wave filter of frequency band that defines.
Output port can be balance or single-ended.Wave filter can be ladder type or DMS wave filters or both
Mixing.
Chip can also have matching element, and matching element makes it possible to the frequency characteristic of wave filter being mutually matched.
Particularly when two wave filters form duplexer, this is conclusive.In this case, each wave filter is in each case
The signal within the free transmission range of another wave filter should be reflected down.
For matched purpose, inductance and capacitance can be arranged between two wave filters on chip.Possibly through
Resonator realizes this inductance and capacitance.In addition, input port is connectable to external coil.In addition, for example by using copper
Manufactured inductance, can realize other matching elements on chip.
Chip substrate can be quartz, lithium niobate or lithium tantalate.
The invention further relates to the encapsulation with chip according to the invention.This encapsulation preferably also presents one or more
Inductance, particularly copper coil, separate for improved duplexer.Inductance can be arranged on the surface of encapsulation or be integrated into envelope
In the substrate of dress.
The invention further relates to one kind to encapsulate, wherein four wave filters operated using surface acoustic wave are arranged on above-mentioned the
In two embodiments, each wave filter covers different frequency bands.In this arrangement, four wave filters are set as follows
Put：So that two wave filters form left column, and remaining two wave filters form right row.Two wave filters respectively from a row
It is each configured to toward each other.
Wave filter can be arranged on two or more chips.Chip can include different substrate materials.Wave filter
Preferably it is distributed on two chips.The wave filter for forming left column is arranged on the first chip, and forms the wave filter of right row
It is arranged on the second chip.Two chip positionings are into relative to each other.
In addition, each chip in two chips can have an input port, which is connected to chip
Two wave filters.The two chips form duplexer.This arrangement corresponds to illustrative embodiment described above, two of which wave filter
Each one input duplexer of self-forming.But it is completely different with illustrative embodiment described above, at this moment four wave filters are distributed in two
On a single chip substrate.
Encapsulation can have two output ports, and each output port in output port can be connected respectively to two
A wave filter on each chip in a chip.In this case, one duplexer of each self-forming of two wave filters, the
One wave filter is set on a single die, and the second wave filter is arranged on another chip.
Therefore, the encapsulation as described in current claim 18 corresponds essentially to the chip as described in current claim 2,
Only wave filter is distributed on two or more chips.
Brief description of the drawings
Hereinafter, the present invention will be described in more detail with reference to illustrative embodiment and associated drawings.Attached drawing is not by being real
The figure of ruler is represented to show the different illustrative embodiments of the present invention.
Fig. 1 shows that the figure of transmission and receiving circuit represents.
Fig. 2 shows that the figure of the first illustrative embodiment of chip represents.
Fig. 3 shows that the figure of the second illustrative embodiment of chip represents.
Fig. 4 shows the insertion loss and standing-wave ratio of the first wave filter F1.
Fig. 5 shows the insertion loss and standing-wave ratio of the second wave filter F2.
Fig. 6 shows the insertion loss and standing-wave ratio of the 3rd wave filter F3.
Fig. 7 shows the insertion loss and standing-wave ratio of the 4th wave filter F4.
Fig. 8 shows to encapsulate.
Fig. 9 shows favorably to encapsulate.
Figure 10 graphically shows the another variant of the second illustrative embodiment of chip.
Embodiment
Fig. 1 shows that antenna 1 is connected to the transmission of RF circuits 2 in the mobile phone and the figure of receiving circuit represents.Transmission and
Receiving circuit has four signal paths SP1, SP2, SP3, SP4, and both the above signal path SP1, SP2 form receiving circuit,
And following two signal path SP3, SP4 form transmitting circuit.Two signal paths SP1, SP2 of receiving circuit are each connected
To input port EP1, an EP2 of chip CH.
Chip CH has four SAW filters F1, F2, F3, F4 and two input ports EP1, EP2 and two output terminals
Mouth AP1, AP2.In input port EP1, EP2, two wave filters are interconnected to form duplexer in each case.Therefore, two
Each input port in a input port EP1, EP2 be connected respectively in each case two SAW filters F1, F3 and
F2、F4.Output port AP1, AP2 can also be embodied as duplexer, and be cross connected to two SAW filtering respectively in each case
Device F1, F2 and F3, F4.In addition, output port AP1, AP2 are balance herein so that chip has total of four output terminal
Sub- AP1a, AP1b, AP2a, AP2b, two lead-out terminal AP1a, AP1b and AP2a, AP2b form one respectively in each case
A output port AP1 and AP2.
Antenna 1 can alternatively be connected to one of two signal paths SP1, SP2 of receiving circuit via switch S,
Each signal path in two signal paths SP1, SP2 leads to one of input port EP1, EP2 of chip.Exporting
Side, output port AP1, AP2 of chip are connected to two low-noise amplifiers LNA1, LNA2.
In addition, antenna 1 can be connected to one of two drive access SP3, SP4 of transmitting circuit via switch S.Often
A drive access SP3, SP4 have preamplifier VV1 and VV2, main amplifier HV1 and HV2 and low-pass amplifier LPF1 and
LPF2。
Fig. 2 show according to according to SAW filter F1, F2 in the chip CH of the invention of the first illustrative embodiment, F3,
The arrangement of F4.Two input ports EP1 and EP2 are located at input side.First input port EP1 is connected to wave filter F1 and F3.The
Two input port EP2 are connected to wave filter F2 and F4.Wave filter F1 and F2 are the wave filters for the frequency band in high frequency band, filtering
Device F3 and F4 are the wave filters for the frequency band in low-frequency band.These can be, for example, the frequency band to define according to GSM standard.Filter
Ripple device F1 is designed to the GSM frequency bands of 1960 MHz, and wave filter F2 is designed to the GSM frequency bands of 1842.5 MHz.Accordingly
Ground, the two frequency bands are in high frequency band.Wave filter F3 (942.5 MHz) and F4 (881.5 MHz) coverings are according to GSM standard
Frequency band, and in low-frequency band.
But the present invention is not in any way restricted to the frequency band according to GSM standard.Four wave filters F1, F2, F3, F4 can also
Such as it is designed to four frequency bands according to UMTS standard.
According to the first illustrative embodiment shown in Fig. 2, four wave filter F1-F4 are DMS structures.In this context, four
Each wave filter in a wave filter F1-F4 by two filter construction FS1a, DMS1b that one of them can be DMS structures,
The combination of FS2a, DS2b, FS3a, DMS3b, FS4a, DMS4b forms.
The configuration for this wave filter being made of two filter constructions is discussed by the first wave filter F1.Other filtering
Device F2, F3, F4 can have similar filter construction.
The first filter construction FS1a of first wave filter F1 is series resonator.The output of first filter construction FS1a
It is connected to the construction unit of the second filter construction DMS1b via three parallel signal lines SL1, SL2, SL3 at the same time herein.
Second filter construction DMS1b is DMS structures, and has three coupling transformers and two output translators.
Signal wire SL1, SL2, the SL3 for being connected to the output of the first filter construction FS1 are connected to coupling transformer in each case.
Output AO1, AO2 of two output translators of DMS structures DMS1b are connected to an output terminal of chip CH in each case
Mouth AP1, AP2.In this arrangement, the first output port AP1 is connected respectively to one of wave filter F1 and F2.First output
Port AP1 has two lead-out terminals AP1a, AP1b, and is arranged to balance.Also have two lead-out terminal AP2a,
AP2b and be set to balance the second output port AP2 be connected to wave filter F3 and F4.
Arrangement depicted herein represents the simplification of practical filter structure.Wave filter energy for GSM 1900MHz frequency bands
It is enough to be formed by resonator with the series circuits of the DMS filter constructions with six IDT.Resonator and DMS wave filters pair
Should the first and second filter constructions of ground expression.Wave filter for GSM 1800MHz frequency bands can have as the first filtering
The series connection of device structure and parallel resonator and the DMS filter constructions with six IDT as the second filter construction.With
In the wave filter of GSM 850 and 950MHz frequency bands can with as the second filter construction on the output side with three
The DMS structures and the series connection as the first filter construction and parallel resonator of IDT.Furthermore it is possible to duplexer filter it
Between input use further resonator, in order to provide improved matching.
If two wave filters form a duplexer, the frequency characteristic of the two wave filters must pass through matching element
To be mutually matched.Signal in the passband of a wave filter should be by another filter reflection.In the input side of chip, because
This can set the other elements for the Corresponding matching for providing wave filter.
For example, the external coil for being connected to one of input port EP1, EP2 can be used.In addition, inductance and capacitance energy
Enough it is arranged between two wave filters to form duplexer.This of inductance and capacitance combination also can be by resonators come real
It is existing.Copper coil on chip CH can act as further matching element.
The present invention is not in any way restricted to the arrangement of SAW filter F1-F4 depicted herein.In addition to DMS structures, filtering
Device F1-F4 can also be arranged to ladder type filter, or the mixing of ladder type and DMS wave filters is contemplated that.In these backgrounds
Under, trapezoidal-structure is cascaded with DMS structures.
Input port EP1 and EP2 are connected to the wave filter for the frequency band being respectively used in high frequency band in each case respectively
The wave filter F1 and F4 of F1 and F2 and the frequency band being respectively used in low-frequency band, while an output port AP1 is connected to and is used for
It is connected to each from wave filter F1, F2 of a frequency band of high frequency band, and another output port AP2 for each from low
Wave filter F3, F4 of one frequency band of frequency band.Accordingly, can not be avoided in the chip CH according to this first embodiment defeated
Enter the intersection of the signal wire of side or outlet side.
Fig. 3 shows the second illustrative embodiment of chip CH according to the invention.Shown in second illustrative embodiment and Fig. 2
The arrangement for the SAW filter F1-F4 being characterized in particular in outside the difference of illustrative embodiment in chip substrate.Four wave filter F1-
At this moment F4 is arranged to the form of 2 × 2 matrixes with two rows and two row.Wave filter F1 and F2 formed the first row, wave filter F3 and
F4 forms the second row, and wave filter F1 and F3 and wave filter F2 and F4 form a row respectively in each case.Wave filter F1 and
F3 is arranged on the left side of chip CH, and is connected to first input port EP1.Wave filter F2 and F4 are arranged on right side, and even
It is connected to the second input port EP2.
Terminal AP1a, AP1b, AP2a, AP2b of output port AP1, AP2 are respectively disposed between wave filter F1-F4.The
Terminal AP1a, AP1b of one output port AP1 is arranged between wave filter F1 and wave filter F2.The end of second output port AP2
Sub- AP2a, AP2b are arranged between wave filter F3 and F4, and are connected to the two wave filters F3, F4.Herein, output port
AP1, AP2 are set to balance in each case.
Compared with the arrangement shown in Fig. 2, it is excellent that some are presented according to the arrangement of the wave filter F1-F4 of the second illustrative embodiment
Point.Chip CH is generally more compact, so as to cause the ratio of more favourable length and width.This permitting deformation instrument is used to pacify
Dress and test chip CH.In addition, in the intersection of input side undesired signal line.Signal cross is also not present in outlet side.
Therefore, signal cross is avoided in chip-scale.Only when chip is connected to the pad of encapsulation, it is only possible in outlet side
There is crossing elimination.
The invention is not limited in the embodiment of chip depicted herein.Thus, for example, each individually SAW filter F1-
The audio track line of F4（acoustic track）It can be rotated by 90 ° in the arrangement according to Fig. 3 around their respective center point.It is right
The output of Ying Di, SAW filter F1-F4 can also rotate to diverse location.In this case, it can produce and be used for output terminal
Sub- AP1a/b and AP2a/b are connected to the more short signal path of the terminal of encapsulation.
Figure 10 shows that the figure of a possible embodiment of the second illustrative embodiment represents.Therefore, it is more fully described
This expression, specifically, has more accurately decomposed filter construction.
Four SAW filters F1, F2, F3 and F4 are arranged to square on chip again.Wave filter F1-F4 forms 2 × 2
Matrix, is respectively each configured to two wave filter F1 and F3 and F2 and F4 of a row.In addition, the filter respectively from different lines
Ripple device F1 and F2 and wave filter F3 and F4 are oppositely located relative to each other.
Two input ports EP1 and EP2 are located at input side.First input port EP1 is connected to the filtering to form duplexer
Device F1 and F3.Second input port EP2 is connected to wave filter F2 and F4.Wave filter F1 and F2 are for the frequency band in high frequency band
Wave filter, wave filter F3 and F4 are the wave filters for the frequency band in low-frequency band.These can be, for example, to determine according to GSM standard
The frequency band of justice.Wave filter F1 is for example designed to the GSM frequency bands of 1960MHz, and wave filter F2 is designed to 1842.5MHz's
GSM frequency bands.Correspondingly, two frequency bands are respectively positioned in high frequency band.Wave filter F3 (942.5MHz) and F4 (881.5MHz) coverings are pressed
According to the frequency band of GSM standard, and in low-frequency band.
Each in wave filter F1-F4 is made of multiple filter constructions.Filter for the GSM frequency bands of 1900MHz
Ripple device F1 has the DMS structures DMS1a being connected in series with the second filter construction FS1b.First DMS structures DMS1a has two
Input converter and four coupling transformers.Second filter construction FS1b has to be come with four port resonators in this case
Two resonators realized.The output of the second filter construction FS1b of first wave filter F1 is connected to the first output port AP1
Lead-out terminal AP1a, AP1b.First output port AP1 is balance.Two signal paths of balancing run are via Two-port netwerk
Resonator FS1b is carried out.
The second wave filter F2 for the GSM frequency bands of 1800MHz is arranged to opposite with the first wave filter F1.Second wave filter
With three filter constructions DMS2a, FS2b and FS2c.The first filter construction of second wave filter F2 is DMS structures
DMS2a, and there are total of six IDT, two input converters and four coupling transformers.The filters of DMS structures DMS2a and second
Ripple device structure FS2b is connected in series.Second filter construction FS2b have herein again with four port resonators come realize two
A resonator.Also there is the 3rd filter construction FS2c and the second wave filter of two resonators being made of four port resonators
Structure FS2b is connected in parallel.Parallel Two-port netwerk resonator FS2c is actually connected to ground, and in input side, two balanced signals
It is connected thereto.Lead-out terminal AP1a, AP1b of first output port AP1 and the second filter construction FS2b be connected in series and with
The 3rd filter construction FS2c of second wave filter F2 is connected in parallel.
The 3rd wave filter F3 for the GSM frequency bands of 942.5MHZ forms duplexer together with the first wave filter F1.The
Three wave filter F3 have three resonator FS3a, FS3b, FS3c and DMS structure DMS3d.First resonator FS3a is directly connected to
First input port EP1.3rd resonator FS3c is connected in series with the first resonator FS3a.In addition, the second resonator FS3b exists
First and the 3rd is parallel-connected to ground between resonator.3rd resonator FS3c is connected to DMS knots via three parallel signal lines
Structure DMS3d, DMS3d have three coupling transformers and two output translators.Two outputs of DMS structures DMS3d are every kind of
In the case of be connected to one of lead-out terminal AP2a, AP2b of the second output port AP2, the second output port AP2 is balance
's.
Similarly the 4th wave filter F4 of the GSM frequency bands for 850MHz is formed with the 3rd wave filter F3.4th filtering
Device F4 also there are three resonator FS4a, FS4b, FS4c and DMS structures DMS4d, the first resonator FS4a to be directly connected to second
Input port EP2.The output of first resonator FS4a is also connected to the 3rd resonator FS4c.Second resonator FS4b first with
It is parallel-connected to ground between 3rd resonator.3rd resonator FS4c is connected to DMS structures via three parallel signal lines
DMS3d, DMS3d have three coupling transformers and two output translators.Two outputs of DMS structures DMS4d are in every kind of feelings
One of lead-out terminal AP2a, AP2b of the second output port AP2 is connected under condition.
The present invention is not in any way restricted to the arrangement of wave filter F1-F4 shown in Figure 10 with wave filter F1-F4's depicted herein
Accurate configuration.Therefore, within the scope of the present invention it is also possible that：Chip has four input ports and four output terminals
Mouthful, each wave filter F1-F4 is just connected to an input port and is just connected to an output port.In addition, two
Wave filter can each be interconnected to form a duplexer only in input side or only in outlet side.
Fig. 4 shows the insertion loss and standing-wave ratio of the first wave filter F1.First wave filter F1 is designed to 1960MHz's
GSM frequency bands.Draw above shows insertion loss.Herein it can be seen that there are pole in passband between 1930 and 1990MHz
Trickle insertion loss.In contrast, in stopband, insertion loss is more than 35dB.
In figure below two, standing-wave ratio is shown.Left side illustrates the standing-wave ratio of the input side of wave filter.This schematic diagram
Show that reflected signal becomes very low in the pass-band.Right part of flg shows the standing-wave ratio of outlet side.Herein, also only reflect in the pass-band
Imperceptible signal component.
Fig. 5 to Fig. 7 accordingly shows the input side of wave filter F2, F3 and F4 and the insertion loss of outlet side and standing-wave ratio.
Wave filter F2 is designed to the GSM frequency bands of 1842.5MHz.Wave filter F3 is designed to the GSM low-frequency bands of 942.5MHz.Filter
Ripple device F4 is designed to the GSM low-frequency bands of 881.5MHz.
Fig. 8 shows that the figure of the encapsulation PA with chip CH according to the invention represents.Encapsulation PA has two long sides of band
With the rectangular basic shape of two short sides, short side in each case with long side shape at an angle of 90.
Encapsulation PA also has eight pin Pin1-Pin8, it can be connected to circuit board and other groups via these pins
Part.Four pin Pin1-Pin4 are arranged in the first long side, and four other pin Pin5-Pin8 are arranged on opposite
In two long sides.
Pin1 is generally used for first input port EP1, and Pin4 is used for the second input port EP2.It is in addition, if defeated
Exit port AP1, AP2 is single-ended, then Pin5 and Pin8 is used to connect two output ports AP1, AP2.In Differential Output port
In the case of AP1, AP2, Pin5 and Pin6 are used for the first output port AP1, and Pin7 and Pin8 is used for the second output port
AP2。
Pin2 and Pin3 can act as ground source of supply.
Fig. 9 shows the improvement arrangement of encapsulation PA.Additionally, this encapsulation PA has two be arranged on the short side of encapsulation
Other pin Pin9 and Pin10 and also have two other pin Pin11 being arranged on the second opposite short side and
Pin12。
At this moment Pin9-Pin12 is used to connect output port AP1, AP2.The following advantage of this configuration provides：Chip CH's is defeated
Exit port AP1, AP2 can be connected to the terminals P in9-Pin12 of encapsulation PA via short symmetric signal line.
Reference number
1-antenna
2-RF circuits
SP1-the first signal paths
SP2-secondary signal path
Three signal paths of SP3-the
Four signal paths of SP4-the
CH-chip
EP1-first input port
EP2-the second input ports
F1-the first wave filters
F2-the second wave filters
Three wave filters of F3-the
Four wave filters of F4-the
AP1-the first output ports
AP2-the second output ports
The first terminal of AP1a-AP1
The Second terminal of AP1b-AP1
The first terminal of AP2a-AP2
The Second terminal of AP2b-AP2
S-switch
LNA1-the first low-noise amplifiers
LNA2-the second low-noise amplifiers
VV1-the first preamplifiers
VV2-the second preamplifiers
HV1-the first main amplifiers
HV2-the second main amplifiers
LPF1-the first low-pass filters
LPF2-the second low-pass filters
The first filter construction of FS1a-F1
The 2nd DMS structures of DMS1b-F1
The first filter construction of FS2a-F2
The 2nd DMS structures of DMS2b-F2
The first filter construction of FS3a-F3
The 2nd DMS structures of DMS3b-F3
The first filter construction of FS4a-F4
The 2nd DMS structures of DMS4b-F4
SL1-the first signal wires
SL2-secondary signal line
Three signal wires of SL3-the
The first output of AO1-DMS1b
The second output of AO2-DMS1b
PA-encapsulation
Pin1-the first pins.
Claims (19)
1. a kind of chip (CH), has
Four wave filters (F1, F2, F3, F4) operated using surface acoustic wave, four wave filters (F1, F2, F3, F4)
In each wave filter cover different frequency band, and each and two output ports of two input ports (EP1, EP2)
Two wave filters being each connected in four wave filters (F1, F2, F3, F4) of (AP1, AP2),
Wherein：
Four wave filters (F1, F2, F3, F4) are arranged on the chip (CH) as follows：So that two filtering
Device (F1, F3) forms left column, and remaining two wave filters (F2, F4) form right row；
It is oppositely located relative to each other each from two in four wave filters (F1, F2, F3, F4) of a row；And
The wave filter (F1, F2, F3, F4) of two relative positionings be connected respectively to be arranged on two wave filters relative to each other (F1,
F2, F3, F4) between output port (AP1, AP2),
Described two input ports include first input port and the second input port, each in described two input ports
Input port is connected to one in four wave filters being connected with the first output port of described two output ports
Another in four wave filters that a and with described two output ports the second output ports are connected；And
Described two wave filters (F1, F3) are coupled to first in described two input ports (EP1, EP2), and remaining two
A wave filter (F2, F4) is coupled to second in described two input ports (EP1, EP2), in described two wave filters
One (F2) in one (F1) and remaining two wave filters be used to be respectively from a frequency band in low-frequency band,
And one (F4) in one (F3) and remaining two wave filters in described two wave filters be used to come respectively
From a frequency band in high frequency band；And
Each of four wave filters (F1, F2, F3, F4) is the receiving filter of receiving circuit.
2. chip (CH) as claimed in claim 1,
Wherein, each input port in described two input ports (EP1, EP2) is all connected to be formed described the four of duplexer
Two in a wave filter (F1, F2, F3, F4).
3. the chip (CH) as described in one of claim 1 and 2,
Wherein, two wave filters (F1, F3) of left column are connected to first input port (EP1), and remaining two of right row
Wave filter (F2, F4) is connected to second input port (EP2).
4. the chip (CH) as described in one of claim 1-3,
Wherein, the chip has two output ports (AP1, AP2), and each in the output port (AP1, AP2)
Output port is all connected to two in four wave filters (F1, F2, F3, F4) of each one duplexer of self-forming.
5. chip (CH) as claimed in claim 4,
Wherein, first output port (AP1) is connected to described two filtering of described two frequency bands in covering high frequency band
Device (F1, F2), and second output port (AP2) are connected to the described two of described two frequency bands in covering low-frequency band
Wave filter (F3, F4).
6. the chip (CH) as described in one of claim 1-5,
Further comprise the element for being used to match the frequency characteristic of four wave filters (F1, F2, F3, F4).
7. the chip (CH) as described in one of claim 1-6,
Wherein, the output port (AP1, AP2) is balance.
8. the chip (CH) as described in one of claim 1-7,
Wherein, the output port (AP1, AP2) is single-ended.
9. the chip (CH) as described in one of claim 1-8,
Wherein, four wave filters (F1, F2, F3, F4) are respectively structured as ladder type or DMS wave filters or described two filtering
The mixing of device type.
10. the chip (CH) as described in one of claim 1-11,
Wherein, one (F1) in four wave filters has DMS structures (DMS1a), DMS structures (DMS1a) connection
It is connected in series to one (EP1) in described two input ports and with resonator (FS1b), and wherein described resonator
(FS1b) it is connected to output port (AP1).
11. the chip (CH) as described in one of claim 1-9,
Wherein：
One (F2) in four wave filters has DMS structures (DMS2a) and two resonators (FS2b, FS2c)；
The DMS structures (DMS2a) be connected to one (EP2) in described two input ports and with first resonator
(FS2b) it is connected in series；
Second resonator (FS2c) is connected in parallel with first resonator (FS2b)；
Second resonator (FS2c) is actually connected to ground；And
First resonator (FS2b) is connected to output port (AP2).
12. the chip (CH) as described in one of claim 1-11,
Wherein, two (F3, F4) in the wave filter have respectively three resonators (FS3a, FS3b, FS3c, FS4a,
FS4b, FS4c) and DMS structures (DMS3d, DMS4d)；
First resonator (FS3a, FS4a) is connected to one in described two input ports (EP1, EP2)；
3rd resonator (FS3c, FS4c) is connected in series with first resonator (FS3a, FS4a)；
Second resonator (FS3b, FS4b) is between described first and the 3rd resonator (FS3a, FS4a, FS3c, FS4c)
It is parallel-connected to ground；
3rd resonator (FS3c, FS4c) and DMS structures (DMS3d, the DMS4d) interconnected in series；And
The DMS structures (DMS3d, DMS4d) are connected to output port (AP3, AP4).
A kind of 13. encapsulation (PA) with the chip (CH) as described in one of claim 1-12.
14. encapsulation (PA) as claimed in claim 13,
Further comprise the inductance separated for improved duplexer.
15. the encapsulation (PA) as described in claim 13 or 14,
The downside of wherein described encapsulation has the rectangular shape with two long sides and two short sides perpendicular to long side, for even
The pin (Pin1, Pin4) for meeting described two input ports (EP1, EP2) is arranged on one in the long side, and is used for
The pin (Pin5-Pin8, Pin9-Pin12) for connecting the output port (AP1, AP2) is arranged in another long side or in institute
State on two short sides.
16. one kind encapsulation (PA), including：
Four wave filters (F1, F2, F3, F4) operated using surface acoustic wave, four wave filters (F1, F2, F3, F4)
Set as follows：So that two (F1, F3) in four wave filters form left column, and remaining two filters
Ripple device (F2, F4) forms right row, wherein
It is oppositely located relative to each other each from two in four wave filters (F1, F2, F3, F4) of a row, the wave filter
(F1, F2, F3, F4) is arranged on two or more chips (CH)；
Each of four wave filters (F1, F2, F3, F4) covers different frequency bands；
Each of four wave filters (F1, F2, F3, F4) is the receiving filter of receiving circuit,
The wave filter (F1, F2, F3, F4) of two relative positionings be connected respectively to be arranged on two wave filters relative to each other (F1,
F2, F3, F4) between output port (AP1, AP2)；
The chip has two input ports and two output ports, described two input ports include first input port and
Second input port, described two output ports include the first output port and the second output port；
Each input port in described two input ports is connected to described four be connected with first output port
One in a wave filter and another in four wave filters for being connected with second output port；And
Described two wave filters (F1, F3) are coupled to first in described two input ports, remaining two wave filters
(F2, F4) is coupled to second in described two input ports, one (F1) and described surplus in described two wave filters
One (F2) in two remaining wave filters be used to be respectively from a frequency band in low-frequency band, and described two filtering
One (F4) in one (F3) and remaining two wave filters in device be used to be respectively from one in high frequency band
A frequency band.
17. encapsulation (PA) as claimed in claim 16,
Two wave filters (F1, F3) for wherein forming left column are arranged on the first chip (CH), and form the remaining of right row
Two wave filters (F2, F4) are arranged on the second chip opposite with first chip as follows：So that respectively originally
It is oppositely located relative to each other from two in four wave filters (F1, F2, F3, F4) of a row.
18. encapsulation (PA) as claimed in claim 17,
Wherein, each chip in described two chips has an input port (EP1, EP2), and the input port
Each input port in (EP1, EP2) is all connected to be formed in four wave filters (F1, F2, F3, F4) of duplexer
Two.
19. the encapsulation (PA) as described in claim 17 or 18,
Wherein, each output port in described two output ports is connected to each described two chips of leisure as follows
(CH) wave filter in four wave filters (F1, F2, F3, F4) on each chip：So that four filtering
Two formation, one duplexer in device (F1, F2, F3, F4).
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102010050581.1 | 2010-11-05 | ||
| DE102010050581A DE102010050581A1 (en) | 2010-11-05 | 2010-11-05 | Chip with four surface acoustic wave filters |
| CN2011800532811A CN103190075A (en) | 2010-11-05 | 2011-11-03 | Chip with four filters operating on surface acoustic waves |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011800532811A Division CN103190075A (en) | 2010-11-05 | 2011-11-03 | Chip with four filters operating on surface acoustic waves |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107911096A true CN107911096A (en) | 2018-04-13 |
| CN107911096B CN107911096B (en) | 2021-08-10 |
Family
ID=45094582
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711281134.5A Active CN107911096B (en) | 2010-11-05 | 2011-11-03 | Chip with four filters operating with surface acoustic waves |
| CN2011800532811A Pending CN103190075A (en) | 2010-11-05 | 2011-11-03 | Chip with four filters operating on surface acoustic waves |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011800532811A Pending CN103190075A (en) | 2010-11-05 | 2011-11-03 | Chip with four filters operating on surface acoustic waves |
Country Status (4)
| Country | Link |
|---|---|
| KR (1) | KR101986785B1 (en) |
| CN (2) | CN107911096B (en) |
| DE (1) | DE102010050581A1 (en) |
| WO (1) | WO2012059552A1 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102015213291A1 (en) | 2015-07-15 | 2017-01-19 | Automotive Lighting Reutlingen Gmbh | Method for operating a first and a second lighting unit of a motor vehicle and circuit arrangement |
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| US20060097824A1 (en) * | 2003-02-04 | 2006-05-11 | Andreas Detlefsen | Electronic component operated with surface acoustic waves |
| CN101268621A (en) * | 2005-09-26 | 2008-09-17 | 株式会社村田制作所 | High-frequency front-end module and antenna duplexer |
| US20090051457A1 (en) * | 2006-03-08 | 2009-02-26 | Thomas Bauer | DMS-Filter with Connected Resonators |
| CN101626102A (en) * | 2008-07-09 | 2010-01-13 | 日本电波工业株式会社 | Duplexer |
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| JPS62105514A (en) * | 1985-11-01 | 1987-05-16 | Kokusai Denshin Denwa Co Ltd <Kdd> | Surface acoustic wave filter bank |
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| JP2003087150A (en) * | 2001-09-14 | 2003-03-20 | Matsushita Electric Ind Co Ltd | High frequency composite switch module |
| JP2003289234A (en) * | 2002-01-28 | 2003-10-10 | Murata Mfg Co Ltd | Surface acoustic wave device and communication device |
| US6816718B2 (en) * | 2002-02-07 | 2004-11-09 | Rf Micro Devices, Inc. | DC offset correction using dummy amplifier |
| US7049906B2 (en) * | 2003-05-29 | 2006-05-23 | Sony Ericsson Mobile Communications Ab | Quad band antenna interface modules including matching network ports |
| KR20050075965A (en) * | 2004-01-19 | 2005-07-26 | 엘지이노텍 주식회사 | Saw package |
| DE102005010658A1 (en) * | 2005-03-08 | 2006-09-14 | Epcos Ag | Duplexer with improved power compatibility |
| KR20090066361A (en) * | 2007-12-19 | 2009-06-24 | 광운대학교 산학협력단 | Triplexer |
| US8565814B2 (en) * | 2008-08-28 | 2013-10-22 | Intel Mobile Communications GmbH | Radio frequency communication devices and methods |
-
2010
- 2010-11-05 DE DE102010050581A patent/DE102010050581A1/en not_active Ceased
-
2011
- 2011-11-03 WO PCT/EP2011/069353 patent/WO2012059552A1/en not_active Ceased
- 2011-11-03 CN CN201711281134.5A patent/CN107911096B/en active Active
- 2011-11-03 CN CN2011800532811A patent/CN103190075A/en active Pending
- 2011-11-03 KR KR1020137014215A patent/KR101986785B1/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6380823B1 (en) * | 1999-06-04 | 2002-04-30 | Fujitsu Limited | Antenna duplexer with receiving, transmitting, and antenna terminal groups separated planarly |
| CN1411632A (en) * | 1999-12-14 | 2003-04-16 | 埃普科斯股份有限公司 | Duplexer with Improved Transmit/Receive Band Separation |
| US20060097824A1 (en) * | 2003-02-04 | 2006-05-11 | Andreas Detlefsen | Electronic component operated with surface acoustic waves |
| US20050264375A1 (en) * | 2004-05-27 | 2005-12-01 | Kyocera Corporation | Surface acoustic wave device and communication apparatus |
| CN101268621A (en) * | 2005-09-26 | 2008-09-17 | 株式会社村田制作所 | High-frequency front-end module and antenna duplexer |
| US20090051457A1 (en) * | 2006-03-08 | 2009-02-26 | Thomas Bauer | DMS-Filter with Connected Resonators |
| CN101626102A (en) * | 2008-07-09 | 2010-01-13 | 日本电波工业株式会社 | Duplexer |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2012059552A1 (en) | 2012-05-10 |
| KR101986785B1 (en) | 2019-06-07 |
| CN103190075A (en) | 2013-07-03 |
| CN107911096B (en) | 2021-08-10 |
| KR20130143596A (en) | 2013-12-31 |
| DE102010050581A1 (en) | 2012-05-10 |
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