CN103138709B - Radio-frequency filter and radio frequency multiplexer - Google Patents
Radio-frequency filter and radio frequency multiplexer Download PDFInfo
- Publication number
- CN103138709B CN103138709B CN201310019705.3A CN201310019705A CN103138709B CN 103138709 B CN103138709 B CN 103138709B CN 201310019705 A CN201310019705 A CN 201310019705A CN 103138709 B CN103138709 B CN 103138709B
- Authority
- CN
- China
- Prior art keywords
- wave filter
- radio
- passive device
- acoustic wave
- miscellaneous function
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The invention discloses a kind of radio-frequency filter and radio frequency multiplexer, this radio-frequency filter comprises: acoustic wave filter chip, for carrying out filtering to the signal received; Passive device miscellaneous function network, is connected with acoustic wave filter chip, and for improving the performance of filter and/or realizing port Impedance translation function, passive device miscellaneous function network is made by integrated passive devices IPD technique.The present invention is by integrated passive devices manufacture technics passive device miscellaneous function network, passive device miscellaneous function network and acoustic wave filter chip are formed radio-frequency filter by various combination mode, the integrated level of device can not only be improved, reduce shared by area, reduce the volume of product, but also passive device can be avoided to be arranged in the package substrates of carrier substrate, thus avoid adopting complicated Multi-layer design to substrate, reduce complexity and the cost of substrate design and manufacture.
Description
Technical field
The present invention relates to electron device package field, and especially, relate to a kind of radio-frequency filter and radio frequency multiplexer.
Background technology
Along with the fast development of wireless telecommunication system, the module of a large amount of Various Functions is designed and is installed in the handheld mobile device of volume very critical.Meanwhile, day by day crowded frequency resource makes the protection interval between different communication bands more and more narrow.Under this development trend, in order to each module in guarantee system normally can work, be independent of each other, will propose higher requirement to each part of communication equipment, such as, radio-frequency front-end must towards the future development of microminiaturized, integrated, high-performance, low-power consumption and low cost.In general, radio-frequency filter module and radio frequency multiplexer module are the important component parts of radio-frequency front-end.Therefore, reduce the size of radio-frequency filter module and radio frequency multiplexer module, and reduce its cost, further developing of radio frequency front end is significant.
Radio-frequency filter module in handheld wireless communications devices and radio frequency multiplexer module adopt some passive devices to form to have the auxiliary network of certain function usually, such as, coordinate the inductance network of acoustic wave filter chip work and capacitance network and other and acoustic wave filter chip to have the impedance matching circuit, balanced-unbalanced converting circuit etc. of electricity coupled relation.
In the conventional technology, passive device auxiliary network in radio-frequency filter module or radio frequency multiplexer module is generally realize by means of discrete component sheet is outer, usual employing surface mounting technology (SurfaceMountedTechnology, referred to as SMT).As shown in Figure 1, filter chip 11 is arranged in single stack package substrate 12, and prop up ball 13 by upside-down mounting and be connected with metal level 14, discrete component (such as, can be inductance, electric capacity etc.) 15 to be arranged on equally in package substrates 12, and be connected with filter chip 11 by metal level 14.This implementation will inevitably increase the pin pad number in module, causes whole module package size to increase, and then increases product cost, and does not meet the requirement of Miniaturization Design.Another kind of scheme is then realize the integrated of passive device by designing complicated multilayer encapsulation substrate, as shown in Figure 2, in multilayer encapsulation substrate 22, utilize metal level cabling 25 and the integrated multiple passive device of through hole 24 (such as: inductance, electric capacity), and by bonding line 23, the filter chip 21 be arranged in package substrates 22 is connected with the passive device in package substrates 22.Although this implementation meets the requirement of Miniaturization Design to a certain extent, the complexity of design and manufacturing cost also corresponding increase.
For the problem that in correlation technique, radio circuit volume is large, cost is high, at present effective solution is not yet proposed.
Summary of the invention
For the problem that in correlation technique, radio circuit volume is large, cost is high, the present invention proposes a kind of radio-frequency filter and radio frequency multiplexer, the integrated level of device can be improved, reduce shared by area, reduce the volume of product, and effectively to control cost.
Technical scheme of the present invention is achieved in that
According to an aspect of the present invention, a kind of radio-frequency filter is provided.
This radio-frequency filter comprises: acoustic wave filter chip, for carrying out filtering to the signal received; Passive device miscellaneous function network, be connected with acoustic wave filter chip, for improving the performance of filter and/or realizing port Impedance translation function, passive device miscellaneous function network is made by integrated passive devices (Integrated-passivedevice, referred to as IPD) technique.Wherein, passive device miscellaneous function network is made up of inductance element and/or capacity cell, and this inductance element and/or capacity cell are produced on one or more IPD chip and realize.
Wherein, alternatively, acoustic wave filter chip is thin-film bulk acoustic wave filter chip, solid-state assembling acoustic wave filter chip or surface acoustic wave filter chip.
Alternatively, passive device miscellaneous function network is made up of High resistivity substrate, and this High resistivity substrate can be High Resistivity Si, glass or sapphire.
According to embodiments of the invention, passive device miscellaneous function network has the inner member for forming passive device miscellaneous function network and realizes the metal level of internal element interconnect, insulating barrier and through hole.
In addition, alternatively, passive device miscellaneous function network comprise following one of at least:
Auxiliary induction network, auxiliary capacitor network, balanced-unbalanced converting circuit.
In one embodiment, acoustic wave filter chip is made up of a High resistivity substrate, and passive device miscellaneous function network is made up of another High resistivity substrate.Now, acoustic wave filter chip and passive device miscellaneous function network are all fixed in package substrates, and realize electricity connection by the metal level cabling of bonding line and/or package substrates.In addition, acoustic wave filter chip and passive device miscellaneous function network adopt upside-down mounting mode to be fixed in package substrates, and are connected by the metal level cabling of package substrates and/or through hole.
In addition, acoustic wave filter chip adopts wafer-level packaging, wafer-level packaging comprises the first wafer and the second wafer, wherein, first wafer is relative with the second crystal column surface, and form cavity by annular conductive or non-conducting material sealing ring bonding, acoustic wave filter chip is made in the surface of the first wafer towards cavity, passive device miscellaneous function network is made in the surface of the second wafer towards cavity, or be made in another surface of the second wafer, acoustic wave filter chip and passive device miscellaneous function network realize interconnected by the columnar metal thing between wafer and/or metal throuth hole, and by metal throuth hole, electricity connection is drawn out to the wafer-level packaging external world, and form metal soldered ball, wherein, metal throuth hole is positioned at the first wafer and/or the second wafer.
On the other hand, acoustic wave filter chip and passive device miscellaneous function network can be made up of same High resistivity substrate.Further, acoustic wave filter chip is connected by the multiple metal level on High resistivity substrate and/or through hole with passive device miscellaneous function network.
According to a further aspect in the invention, a kind of radio frequency multiplexer is provided.This radio frequency multiplexer comprises impedance matching network and at least one above-mentioned radio-frequency filter, and impedance matching network is connected with radio-frequency filter.
Wherein, preferably, impedance matching network is made by integrated passive devices IPD technique, and belongs to a part for passive device miscellaneous function network.
The present invention manufactures passive device miscellaneous function network by integrated passive devices (referred to as IPD), passive device miscellaneous function network and acoustic wave filter chip are formed radio-frequency filter by various combination mode, the integrated level of device can not only be improved, reduce shared by area, reduce the volume of product, but also passive device can be avoided to be arranged in the package substrates of carrier substrate, thus avoid adopting complicated Multi-layer design to substrate, reduce complexity and the cost of substrate design and manufacture.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the schematic diagram adopting discrete component to realize passive device auxiliary circuit in correlation technique;
Fig. 2 is the schematic diagram adopting multilayer encapsulation substrate to realize passive device auxiliary circuit in correlation technique;
Fig. 3 a is radio-frequency filter and the passive device miscellaneous function network settings schematic diagram in an embodiment of various substrates;
Fig. 3 b is radio-frequency filter and the passive device miscellaneous function network settings schematic diagram in another embodiment of various substrates;
Fig. 3 c is the cross-sectional view after structure shown in Fig. 3 b sections along line A-A ';
Fig. 4 is radio-frequency filter and the passive device miscellaneous function network settings schematic diagram in an embodiment of same substrate;
Fig. 5 a is the schematic diagram of the IPD chip structure according to the embodiment of the present invention;
Fig. 5 b is the cross-sectional view after structure shown in Fig. 5 a sections along line B-B ';
Fig. 6 a is the structure chart carrying out an instantiation of wafer-level packaging according to the radio-frequency filter of the embodiment of the present invention and passive device miscellaneous function network;
Fig. 6 b is the structure chart carrying out another instantiation of wafer-level packaging according to the radio-frequency filter of the embodiment of the present invention and passive device miscellaneous function network;
Fig. 7 is the structure chart of the radio-frequency filter module of one embodiment of the invention;
Fig. 8 is the curve chart illustrating that auxiliary induction network affects filter transfer characteristic;
Fig. 9 a, 9b and 9c are the connection diagrams of auxiliary induction;
Figure 10 is the structure chart of the radio-frequency filter module of another embodiment of the present invention;
Figure 11 is the curve chart illustrating that auxiliary capacitor network affects filter transfer characteristic;
Figure 12 is the structure chart of the radio-frequency filter module of another embodiment of the present invention;
Figure 13 is the structure chart of the radio-frequency filter module of another embodiment of the present invention;
Figure 14 a-14f is the structure chart of balanced-unbalanced converting circuit;
Figure 15 is the structure chart of the radio frequency duplexer module of one embodiment of the invention;
Figure 16 is the structure chart of the radio frequency duplexer module of another embodiment of the present invention.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, be clearly and completely described the technical scheme in the embodiment of the present invention, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, the every other embodiment that those of ordinary skill in the art obtain, all belongs to the scope of protection of the invention.
According to embodiments of the invention, provide a kind of radio-frequency filter (hereinafter also referred to as radio-frequency filter module).Radio-frequency filter according to the embodiment of the present invention comprises: acoustic wave filter chip, for carrying out filtering to the signal received; Passive device miscellaneous function network, be connected (such as with acoustic wave filter chip, can be connected by bonding line, also can connect by other means), for improving the performance of filter and/or realizing port Impedance translation function, passive device miscellaneous function network is made by integrated passive devices (referred to as IPD) technique.Wherein, passive device miscellaneous function network is made up of inductance element and/or capacity cell, and this inductance element and/or capacity cell are produced on one or more IPD chip and realize.
Wherein, alternatively, acoustic wave filter chip is thin-film bulk acoustic wave filter chip, solid-state assembling acoustic wave filter chip or surface acoustic wave filter chip.
Alternatively, passive device miscellaneous function network is made up of High resistivity substrate, and this High resistivity substrate can be High Resistivity Si, glass or sapphire.
According to embodiments of the invention, passive device miscellaneous function network has the inner member for forming passive device miscellaneous function network and realizes the metal level of internal element interconnect, insulating barrier and through hole.
In addition, alternatively, passive device miscellaneous function network comprise following one of at least:
Auxiliary induction network, auxiliary capacitor network, balanced-unbalanced converting circuit.
In addition, will be described for piezoelectric acoustic-wave filter hereinafter, in the following description, also piezoelectric acoustic-wave filter chip will be called piezoelectric acoustic-wave filter.
Pass through the solution of the present invention, passive device miscellaneous function network can be realized by IPD technology, inductance in passive device miscellaneous function network and/or electric capacity are integrated in one or more IPD chip, make the area shared by passive device less, device pin number is less.
Below the cell configuration mode adopted the application is described.
A () in certain embodiments, acoustic wave filter chip is made up of a High resistivity substrate, passive device miscellaneous function network is made up of another High resistivity substrate.Now, acoustic wave filter chip and passive device miscellaneous function network are all fixed in package substrates, and realize electricity connection by the metal level cabling of bonding line and/or package substrates.In addition, acoustic wave filter chip and passive device miscellaneous function network adopt upside-down mounting mode to be fixed in package substrates, and are connected by the metal level cabling of package substrates and/or through hole.
As shown in Figure 3 a, piezoelectric acoustic-wave filter chip (namely, corresponding to above-mentioned radio-frequency filter chip) 31 and IPD chip (namely, above-mentioned passive device miscellaneous function network) 32 to be made up of different High resistivity substrates, and being fixed in package substrates 34, piezoelectric acoustic-wave filter chip 31 realizes being electrically connected by bonding line 33 with IPD chip 32.
In addition, be the another kind assembling mode of piezoelectric acoustic-wave filter chip 31 and IPD chip 32 as shown in figures 3 b and 3 c, wherein, Fig. 3 c is the cross-sectional view after Fig. 3 b shown device sections along line A-A '.In this assembling mode, piezoelectric acoustic-wave filter chip 31 and IPD chip 32 adopt upside-down mounting mode to prop up ball 36 by metal to be fixed in package substrates 34, and realize electrical connection by the metal level cabling 35 in package substrates 34, wherein, the dotted line in IPD chip 32 is for representing that integrated inductance element is positioned at substrate backside.
B () in further embodiments, acoustic wave filter chip and passive device miscellaneous function network can be made up of same High resistivity substrate, thus reduce area occupied further, reduce costs.Now, acoustic wave filter chip is connected by the multiple metal level on High resistivity substrate and/or through hole with passive device miscellaneous function network.As shown in Figure 4, piezoelectric acoustic-wave filter chip 41 and IPD chip are made up of same High resistivity substrate 46, IPD chip comprises IPD electric capacity 42 and IPD inductance 43, and realizes piezoelectric acoustic-wave filter chip 41, electrical connection between IPD electric capacity 42 and IPD inductance 43 by metal level 45.
C () Fig. 5 a and Fig. 5 b shows the concrete structure of IPD chip; Fig. 6 a and Fig. 6 b is that piezoelectric acoustic-wave filter chip adopts wafer-level packaging and IPD chip is formed on the schematic diagram of wafer-level packaging upper strata High resistivity substrate.Wherein, as shown in Figure 5 a, IPD chip can comprise inductance 51 and electric capacity 52, and inductance 51 and electric capacity 52 are arranged on substrate 53, and realizes being connected to each other by metal level cabling 55, and inductance 51 and electric capacity 52 draw pad 54 to be connected other devices.Fig. 5 b is the cross-sectional view after chip shown in Fig. 5 a sections along line B-B '.As shown in Figure 5 b, be provided with insulating barrier 56 above substrate 53, metal level cabling 55 is positioned at below insulating barrier, is connected by inductance 51 with electric capacity 52.
Fig. 6 a and Fig. 6 b shows and carries out the structure after wafer-level packaging to filter chip and passive device miscellaneous function network.
As shown in Figure 6 a, in one embodiment, filter wafer 61 ' and IPD wafer 62 ' form sealed cavity by annular conductive or non-conducting material sealing ring 66 bonding, filter wafer 61 ' has filter 61 (corresponding to above-mentioned piezoelectric acoustic-wave filter chip towards cavity side, also can be the filter chip of other types), IPD wafer 62 ' has multiple passive device in cavity side dorsad, such as, the Various Components such as inductance 62 and/or electric capacity (not shown) can be comprised.Filter 61 is connected with the passive device on IPD wafer 62 ' by metal mainstay 63 and metal throuth hole 64, and in addition, IPD wafer 62 ' can prop up ball 65 by metal and be connected with miscellaneous part, such as, can be connected with package substrates.
In another embodiment, wafer-level packaging can be carried out according to the structure shown in Fig. 6 b.Be with the difference of structure shown in Fig. 6 a, form cavity in surfaces opposite to each other after filter wafer 61 ' and the encapsulation of IPD wafer 62 ', and inductance 62 and filter chip 61 be all manufactured on the surface towards this cavity.
Except the encapsulating structure shown in Fig. 6 a and 6b, in other embodiments, metal throuth hole 64 not only can be positioned at the wafer 62 ' at passive device miscellaneous function network place, the wafer 61 ' that can also be positioned at acoustic wave filter chip place is further (corresponding, metal props up ball 65 and also can draw cavity side dorsad from the wafer at acoustic wave filter chip place further), or metal throuth hole and the soldered ball of drawing also can exist only in the wafer at acoustic wave filter chip place.
Hereinafter, concrete structure and the elements combination mode of acoustic wave filter chip and passive device miscellaneous function network will be described in detail.It should be noted that in the following description, what provide is only the concrete structure example of acoustic wave filter chip and passive device miscellaneous function network, and the present invention is not limited to this.Fig. 7, Figure 10, Figure 12, Figure 13, Figure 15, the Tu16Zhong that will describe below, the device in the dotted line frame in figure is the device be produced on together.
As shown in Figure 7, radio-frequency filter 700 comprises a piezoelectric acoustic-wave filter (also can be described as piezoelectric acoustic-wave filter chip, is the one in above-mentioned acoustic wave filter chip) 710 and auxiliary induction network (being the one in above-mentioned passive device miscellaneous function network) 720 according to an embodiment of the invention.
Piezoelectric acoustic-wave filter 710 is the one in thin-film bulk acoustic wave filter, solid-state assembling acoustic wave filter or surface acoustic wave filter.Piezoelectric acoustic-wave filter 710 has single-ended-single-ended trapezoidal-structure, and the piezoelectric acoustic wave resonator S711 be connected in series by multiple, S712, S713, S714 and multiple piezoelectric acoustic wave resonator P711, P712, P713, P714 be connected in parallel are formed.
Auxiliary induction network 720 comprises inductance L 721, L722.Parallel resonator P712 earth terminal in piezoelectric acoustic-wave filter 710 is by inductance L 721 ground connection in auxiliary induction network 720, and parallel resonator P713 and P714 earth terminal link together again by inductance L 722 ground connection in auxiliary induction network 720.
The stopband frequency range utilizing inductance L 721 and L722 can need in piezoelectric acoustic-wave filter forms transmission zero, reaches suppression requirement.As shown in Figure 8, curve A 1 is the band pass filter transfer curve not adding auxiliary induction, curve B 1 is for adding the filter transfer characteristic curve of auxiliary induction, a transmission zero is respectively defined in passband both sides, by adjusting the inductance value of inductance, these two stopband transmission zero P1 can be moved in the same way, being located at required frequency range, accordingly, the number by increasing inductance can increase transmission zero number.
Wherein, inductance L 721, L722 adopt IPD technique and are made up of High resistivity substrate, and therefore, auxiliary induction network 720 also can be described as IPD chip 720.High resistivity substrate material can be the one in High Resistivity Si, glass, sapphire.The induction structure comprised in this IPD chip 720 is formed by multiple metal levels of High resistivity substrate and is interconnected by metal level and through hole.This IPD chip 720 can adopt the above-mentioned compound mode as Fig. 3 a, Fig. 3 b, Fig. 3 c, Fig. 4, Fig. 6 a, Fig. 6 b when combining with piezoelectric acoustic-wave filter chip 710.
In addition, in the structure shown in Fig. 7, the piezoelectric acoustic wave resonator P711 be connected in parallel, between P712, P713, P714 and ground, the method for series inductance can adopt Fig. 9 a, Fig. 9 b, the various ways shown in Fig. 9 c, and can adopt the present invention's other modes unshowned.As illustrated in fig. 9 for the piezoelectric acoustic wave resonator of single branch in parallel is connected to ground by a series inductance.Be as shown in figure 9b two branches in parallel piezoelectric acoustic wave resonator by a series inductance be connected to ground, wherein these two branches in parallel can be any branches in parallel in filter, also can be connected to ground by a series inductance by multiple branch in parallel.Be the piezoelectric acoustic wave resonator of a branch in parallel receives the piezoelectric acoustic wave resonator of another branch in parallel near end by a series inductance as is shown in fig. 9 c, then by another series inductance ground connection.These inductance all can be integrated in IPD chip as a part for auxiliary induction network.Further, in the present embodiment, the position of institute's coilloading is not limited to shown in Fig. 7 and Fig. 9 a-c, can also have other compound modes multiple.
In addition, as shown in Figure 10, (namely radio-frequency filter 1000 comprises a piezoelectric acoustic-wave filter 1010 in accordance with another embodiment of the present invention, corresponding to above-mentioned acoustic wave filter chip, be the one in acoustic wave filter chip) and auxiliary capacitor network (being the one in above-mentioned passive device miscellaneous function network) 1020.
Piezoelectric acoustic-wave filter 1010 is the one in thin-film bulk acoustic wave filter, solid-state assembling acoustic wave filter or surface acoustic wave filter.Piezoelectric acoustic-wave filter 1010 has single-ended-single-ended trapezoidal-structure, and the piezoelectric acoustic wave resonator S1011 be connected in series by multiple, S1012, S1013, S1014 and multiple piezoelectric acoustic wave resonator P1011, P1012, P1013, P1014 be connected in parallel are formed.
Auxiliary capacitor network 1020 comprises electric capacity C1021, C1022.Electric capacity C1021 in auxiliary capacitor network 1020 is connected with piezoelectric acoustic-wave filter 1010 by first node, electric capacity C1022 is connected with piezoelectric acoustic-wave filter 1010 by Section Point, the other end of electric capacity C1021 and C1022 altogether, and is connected with the parallel resonator P1013 earth terminal in piezoelectric acoustic-wave filter 1010.
The stopband frequency range utilizing electric capacity C1021 and C1022 can need in piezoelectric acoustic-wave filter forms transmission zero, reaches suppression requirement.As shown in figure 11, curve A 2 is the band pass filter transfer curve not adding auxiliary capacitor, curve B 2 is for adding the filter transfer characteristic curve of auxiliary capacitor, in passband both sides, substantially equidistant position adds two transmission zero P2, by adjustment capacitance, oppositely can move these two stopband transmission zeros, be located at required frequency range.Accordingly, the number by increasing electric capacity can increase the number of transmission zero.In addition, the position of added electric capacity is not limited to shown in Figure 10, can also have multiple combination mode.
Electric capacity C1021, C1022 adopt IPD technique and are made up of High resistivity substrate, and therefore, auxiliary capacitor network 1020 also can be described as IPD chip 1020.High resistivity substrate material is one of in High Resistivity Si, glass, sapphire.The capacitance structure comprised in this IPD chip 1020 is formed by multiple metal level of High resistivity substrate and insulating barrier and is interconnected by metal level and through hole.This IPD chip 1020 can adopt above-mentioned compound mode as shown in Fig. 3 a, Fig. 3 b, Fig. 3 c, Fig. 4, Fig. 6 a, Fig. 6 b when combining with piezoelectric acoustic-wave filter chip 1010.
As shown in figure 12, a piezoelectric acoustic-wave filter is comprised (namely according to the radio-frequency filter module 1200 of another embodiment of the present invention, corresponding to above-mentioned acoustic wave filter chip, be the one in acoustic wave filter chip) 1210 and balanced-unbalanced converting circuit (being the one in above-mentioned passive device miscellaneous function network) 1220.
Piezoelectric acoustic-wave filter 1210 is the one in thin-film bulk acoustic wave filter, solid-state assembling acoustic wave filter or surface acoustic wave filter.Piezoelectric acoustic-wave filter 1210 has single-ended-single-ended trapezoidal-structure, and the piezoelectric acoustic wave resonator S1211 be connected in series by multiple, S1212, S1213 and multiple piezoelectric acoustic wave resonator P1211, P1212, P1213 be connected in parallel are formed.
Balanced-unbalanced converting circuit 1220 comprises inductance L 1221 and L1222, electric capacity C1221 and C1222.Inductance L 1221 is series between the first port of balanced-unbalanced converting circuit 1220 and the second port, and electric capacity C1221 is parallel between the second port of balanced-unbalanced converting circuit 1220 and ground; Electric capacity C1222 is series between the first port of balanced-unbalanced converting circuit 1220 and the 3rd port, and inductance L 1221 is parallel to the 3rd of balanced-unbalanced converting circuit 1220 the between port and ground.First port of balanced-unbalanced converting circuit 1220 is uneven I/O port, is connected with piezoelectric acoustic-wave filter 1,210 second port.Second port of balanced-unbalanced converting circuit 1220 and the 3rd port are balance I/O port.
In balanced-unbalanced converting circuit, the input/output signal amplitude of the second port and the 3rd port is equal, phase place contrary (differing 180 °), be used for realizing filter single-ended-effect of differential conversion and impedance transformation.The structure of balanced-unbalanced converting circuit has multiple, such as, can adopt the structure as shown in Figure 14 a-f.
Inductance L 1221 and L1222, electric capacity C1221 and C1222 adopt IPD technique and are made up of High resistivity substrate, and therefore, balanced-unbalanced converting circuit 1220 also can be described as IPD chip 1220.High resistivity substrate material is the one in High Resistivity Si, glass, sapphire.The electric capacity comprised in this IPD chip 1220, induction structure are formed by multiple metal level of High resistivity substrate and insulating barrier and are interconnected by metal level and through hole.This IPD chip 1220 can adopt above-mentioned compound mode as shown in Fig. 3 a, Fig. 3 b, Fig. 3 c, Fig. 4, Fig. 6 a, Fig. 6 b when combining with piezoelectric acoustic-wave filter chip 1210.
As shown in figure 13, it is the radio-frequency filter module 1300 of another embodiment of the present invention, comprising a piezoelectric acoustic-wave filter (namely, corresponding to above-mentioned acoustic wave filter chip, be the one in acoustic wave filter chip) 1310 and balanced-unbalanced converting circuit (being the one in above-mentioned passive device miscellaneous function network) 1320.
Piezoelectric acoustic-wave filter 1310 is the one in thin-film bulk acoustic wave filter, solid-state assembling acoustic wave filter or surface acoustic wave filter.Piezoelectric acoustic-wave filter 1310 has balance-balance lattice structure, and the piezoelectric acoustic wave resonator S1311 be connected in series by multiple, S1312, S1313, S1314 and multiple piezoelectric acoustic wave resonator P1311, P1312, P1313, P1314 be connected in parallel are formed.
The structure of balanced-unbalanced converting circuit 1320 is identical with the balanced-unbalanced converting circuit 1220 in Figure 12.First port of balanced-unbalanced converting circuit 1320 is uneven I/O port.Second port of balanced-unbalanced converting circuit 1320 and the 3rd port are balance I/O port, are connected respectively with the first port of piezoelectric acoustic-wave filter 1310 with the second port.
Inductance L 1321 and L1322, electric capacity C1321 and C1322 adopt IPD technique and are made up of High resistivity substrate, and therefore, balanced-unbalanced converting circuit 1320 also can be described as IPD chip 1320.High resistivity substrate material is the one in High Resistivity Si, glass, sapphire.The electric capacity comprised in this IPD chip 1320, induction structure are formed by multiple metal level of High resistivity substrate and insulating barrier and are interconnected by metal level and through hole.This IPD chip 1320 can adopt above-mentioned compound mode as shown in Fig. 3 a, Fig. 3 b, Fig. 3 c, Fig. 4, Fig. 6 a, Fig. 6 b when combining with piezoelectric acoustic-wave filter chip 1310.
Similarly, the structure of the balanced-unbalanced converting circuit 1320 in Figure 13 also can have multiple, such as, can adopt the structure as shown in Figure 14 a-f.
According to the present invention, additionally provide radio frequency multiplexer (such as, can be radio frequency duplexer), radio frequency multiplexer according to the present invention comprises impedance matching network and at least one above-mentioned radio-frequency filter, and impedance matching network is connected with radio-frequency filter.
Preferably, impedance matching network also can be made by IPD technique.
Below in conjunction with accompanying drawing, the structure of radio frequency duplexer module is described.
As shown in figure 15, radio frequency duplexer module 1500 comprises transmission channel piezoelectric acoustic-wave filter 1510, receive path piezoelectric acoustic-wave filter 1520 and impedance matching network 1530 according to an embodiment of the invention.
In duplexer and multiplexer, impedance matching network, for eliminating load effect, makes the impact be operated between the band pass filter of different frequency range minimize.The form of impedance matching network is also not limited to shown in figure, and passive device (inductance, electric capacity) can be adopted to form various structures.Transmission channel filter in duplexer and receive path filter can be the one in thin-film bulk acoustic wave filter, solid-state assembling acoustic wave filter or surface acoustic wave filter, structure with reference to any one or a few in above-mentioned Fig. 7, Figure 10, Figure 12, Figure 13, also can be realized by other modes.
Wherein, when transmission channel piezoelectric acoustic-wave filter 1510 adopts the radio-frequency filter 1200 shown in Figure 12, preferably, second port of balanced-unbalanced converting circuit in Figure 12 1220 and the 3rd port can be connected to Tx end, form balance input, so that the power amplifier (PA) with upstream with balance output end is connected, and the first port of piezoelectric acoustic-wave filter in Figure 12 1210 is connected to the second port of transmission channel piezoelectric acoustic-wave filter 1510 in Figure 15.On the other hand, when receive path piezoelectric acoustic-wave filter 1520 adopts the radio-frequency filter 1200 shown in Figure 12, second port of balanced-unbalanced converting circuit in Figure 12 1220 and the 3rd port can be connected to Rx end, form balance output end, there is the low noise amplifier (LNA) balancing input with downstream to be connected, and the first port of piezoelectric acoustic-wave filter in Figure 12 1210 be connected to the first port of receive path piezoelectric acoustic-wave filter 1520 in Figure 15.
In addition, when transmission channel piezoelectric acoustic-wave filter 1510 adopts the radio-frequency filter 1300 shown in Figure 13, preferably, first port of balanced-unbalanced converting circuit in Figure 13 1320 can be connected to impedance matching network, and the 3rd port of piezoelectric acoustic-wave filter in Figure 13 1310 and the 4th port be connected to Tx end.On the other hand, when receive path piezoelectric acoustic-wave filter 1520 adopts the radio-frequency filter 1300 shown in Figure 13, first port of balanced-unbalanced converting circuit in Figure 13 1320 can be connected to impedance matching network, and the 3rd port of piezoelectric acoustic-wave filter in Figure 13 1310 and the 4th port be connected to Rx end.
In addition, as shown in figure 15, impedance matching network 1530 comprises an inductance L 1531.Second port of transmission channel piezoelectric acoustic-wave filter 1510 and the first port of receive path piezoelectric acoustic-wave filter 1520 are all connected to the antenna end of radio frequency duplexer module 1500, and by inductance L 1531 ground connection in impedance matching network 1530.
Inductance L 1531 adopts IPD technique and is made up of High resistivity substrate, and therefore, impedance matching network 1530 also can be described as IPD chip 1530.High resistivity substrate material is the one in High Resistivity Si, glass, sapphire.The induction structure comprised in this IPD chip 1530 is consisted of one or more metal levels of High resistivity substrate.This IPD chip 1530 can adopt above-mentioned compound mode as shown in Fig. 3 a, Fig. 3 b, Fig. 3 c, Fig. 4, Fig. 6 a, Fig. 6 b when combining with transmission channel piezoelectric acoustic-wave filter chip 1510 and/or receive path piezoelectric acoustic-wave filter 1520.
As shown in figure 16, radio frequency duplexer module 1600 comprises transmission channel piezoelectric acoustic-wave filter 1610, receive path piezoelectric acoustic-wave filter 1620 and impedance matching network 1630 in accordance with another embodiment of the present invention.
Transmission channel piezoelectric acoustic-wave filter 1610 and receive path piezoelectric acoustic-wave filter 1620 are the one in thin-film bulk acoustic wave filter, solid-state assembling acoustic wave filter or surface acoustic wave filter.
Wherein, when transmission channel piezoelectric acoustic-wave filter 1610 adopts the radio-frequency filter 1200 shown in Figure 12, preferably, second port of balanced-unbalanced converting circuit in Figure 12 1220 and the 3rd port can be connected to Tx end, and the first port of piezoelectric acoustic-wave filter in Figure 12 1210 be connected to the first port of the impedance matching network 1630 in Figure 16.On the other hand, when receive path piezoelectric acoustic-wave filter 1620 adopts the radio-frequency filter 1200 shown in Figure 12, second port of balanced-unbalanced converting circuit in Figure 12 1220 and the 3rd port can be connected to Rx end, and the first port of piezoelectric acoustic-wave filter in Figure 12 1210 be connected to the second port of the impedance matching network 1630 in Figure 16.
In addition, when transmission channel piezoelectric acoustic-wave filter 1610 adopts the radio-frequency filter 1300 shown in Figure 13, preferably, first port of balanced-unbalanced converting circuit in Figure 13 1320 can be connected to the first port of impedance matching network 1630, and the 3rd port of piezoelectric acoustic-wave filter in Figure 13 1310 and the 4th port be connected to Tx end.On the other hand, when receive path piezoelectric acoustic-wave filter 1620 adopts the radio-frequency filter 1300 shown in Figure 13, first port of balanced-unbalanced converting circuit in Figure 13 1320 can be connected to the second port of impedance matching network 1630, and the 3rd port of piezoelectric acoustic-wave filter in Figure 13 1310 and the 4th port be connected to Rx end.
Impedance matching network 1630 comprises inductance L 1631, electric capacity C1631, electric capacity C1632.Inductance L 1631 is series between the first port of impedance matching network 1630 and the second port, and electric capacity C1631 is parallel between the first port of impedance matching network 1630 and ground, and electric capacity C1632 is parallel between the second port of impedance matching network 1630 and ground.Second port of transmission channel piezoelectric acoustic-wave filter 1610 is connected with the first port of impedance matching network 1630, and is connected with the antenna end of radio frequency duplexer module 1600.First port of receive path piezoelectric acoustic-wave filter 1620 is connected with the second port of impedance matching network 1630.
Inductance L 1631, electric capacity C1631 and C1632 adopt IPD technique and are made up of High resistivity substrate, and therefore, impedance matching network 1630 also can be described as IPD chip 1630.High resistivity substrate material is the one in High Resistivity Si, glass, sapphire.The electric capacity comprised in this IPD chip 1630, induction structure are formed by multiple metal level of High resistivity substrate and insulating barrier and are interconnected by metal level and through hole.This IPD chip 1630 can adopt above-mentioned compound mode as shown in Fig. 3 a, Fig. 3 b, Fig. 3 c, Fig. 4, Fig. 6 a, Fig. 6 b when combining with transmission channel piezoelectric acoustic-wave filter chip 1610 and/or receive path piezoelectric acoustic-wave filter 1620.
It should be noted that, although Figure 15 and Figure 16 shows the concrete structure of radio frequency duplexer module, but this is not intended to limit the present invention, in actual applications, radio frequency duplexer module not only can adopt other forms of filter module, and the impedance matching network of other various ways can be adopted, will not enumerate herein.
To present invention achieves in radio-frequency filter module and radio frequency multiplexer module integrated passive devices auxiliary functional circuit on sheet, thus decrease the pin pad number in module, package dimension is reduced, thus reach the object reducing product cost.
In sum, the present invention considers that the radio-frequency filter module and radio frequency multiplexer module for having passive device auxiliary functional circuit proposes integrated scheme, passive device installation cost can be reduced, reduce package dimension, effective minimizing solder joint and connecting line quantity, the design complexities of facilitating chip peripheral circuit, improves product reliability, and contributes to the cost reducing whole product.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (13)
1. a radio-frequency filter, is characterized in that, comprising:
Acoustic wave filter chip, for carrying out filtering to the signal received;
Passive device miscellaneous function network, is connected with described acoustic wave filter chip, and for improving the performance of filter and/or realizing port Impedance translation function, described passive device miscellaneous function network is made by integrated passive devices IPD technique; And
Described acoustic wave filter chip and described passive device miscellaneous function network are all fixed in single stack package substrate.
2. radio-frequency filter according to claim 1, is characterized in that, described acoustic wave filter chip is thin-film bulk acoustic wave filter chip, solid-state assembling acoustic wave filter chip or surface acoustic wave filter chip.
3. radio-frequency filter according to claim 1, is characterized in that, described passive device miscellaneous function network is made up of High resistivity substrate, and described High resistivity substrate is High Resistivity Si, glass or sapphire.
4. radio-frequency filter according to claim 1, is characterized in that, described passive device miscellaneous function network has the inner member for forming described passive device miscellaneous function network and realizes the metal level of internal element interconnect, insulating barrier and through hole.
5. radio-frequency filter according to claim 1, is characterized in that, described passive device miscellaneous function network comprise following one of at least:
Auxiliary induction network, auxiliary capacitor network, balanced-unbalanced converting circuit.
6. radio-frequency filter according to claim 1, is characterized in that, described acoustic wave filter chip is made up of a High resistivity substrate, and described passive device miscellaneous function network is made up of another High resistivity substrate.
7. radio-frequency filter according to claim 6, is characterized in that, described acoustic wave filter chip and passive device miscellaneous function network are all fixed in package substrates, and realizes electricity connection by the metal level cabling of bonding line and/or described package substrates.
8. radio-frequency filter according to claim 6, it is characterized in that, described acoustic wave filter chip and passive device miscellaneous function network adopt upside-down mounting mode to be fixed in package substrates, and are connected by the metal level cabling of described package substrates and/or through hole.
9. radio-frequency filter according to claim 1, it is characterized in that, described acoustic wave filter chip adopts wafer-level packaging, described wafer-level packaging comprises the first wafer and the second wafer, wherein, described first wafer is relative with described second crystal column surface, and form cavity by annular conductive or non-conducting material sealing ring bonding, described acoustic wave filter chip is made in the surface of described first wafer towards described cavity, described passive device miscellaneous function network is made in the surface of described second wafer towards described cavity, or be made in another surface of described second wafer, described acoustic wave filter chip and passive device miscellaneous function network realize interconnected by the columnar metal thing between wafer and/or metal throuth hole, and it is extraneous by described metal throuth hole, electricity connection to be drawn out to described wafer-level packaging, and form metal soldered ball, wherein, described metal throuth hole is positioned at described first wafer and/or described second wafer.
10. radio-frequency filter according to claim 1, is characterized in that, described acoustic wave filter chip and described passive device miscellaneous function network are made up of same High resistivity substrate.
11. radio-frequency filters according to claim 10, is characterized in that, described acoustic wave filter chip is connected by the multiple metal level on described High resistivity substrate and/or through hole with passive device miscellaneous function network.
12. 1 kinds of radio frequency multiplexers, is characterized in that, comprise impedance matching network and at least one radio-frequency filter according to any one of claim 1-11, described impedance matching network is connected with described radio-frequency filter.
13. radio frequency multiplexers according to claim 12, is characterized in that, described impedance matching network is made by integrated passive devices IPD technique, and belongs to a part for passive device miscellaneous function network.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310019705.3A CN103138709B (en) | 2013-01-17 | 2013-01-17 | Radio-frequency filter and radio frequency multiplexer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310019705.3A CN103138709B (en) | 2013-01-17 | 2013-01-17 | Radio-frequency filter and radio frequency multiplexer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103138709A CN103138709A (en) | 2013-06-05 |
| CN103138709B true CN103138709B (en) | 2016-01-27 |
Family
ID=48498112
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310019705.3A Active CN103138709B (en) | 2013-01-17 | 2013-01-17 | Radio-frequency filter and radio frequency multiplexer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103138709B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019120759A1 (en) * | 2017-12-21 | 2019-06-27 | RF360 Europe GmbH | Wafer arrangement, method of making same and hybrid filter |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105185753A (en) * | 2015-08-13 | 2015-12-23 | 北京中科飞鸿科技有限公司 | Single bare surface acoustic wave chip miniaturized package based on LTCC technology |
| CN105187027A (en) * | 2015-08-13 | 2015-12-23 | 北京中科飞鸿科技有限公司 | Matching-free packaging of surface acoustic wave filter |
| CN106374963A (en) * | 2016-08-31 | 2017-02-01 | 宇龙计算机通信科技(深圳)有限公司 | Radio frequency circuit and wireless communication device with same |
| US11201125B2 (en) * | 2017-02-24 | 2021-12-14 | Advanced Semiconductor Engineering, Inc. | Semiconductor package and semiconductor process |
| CN107659284A (en) * | 2017-10-26 | 2018-02-02 | 安徽云塔电子科技有限公司 | A kind of passive filter device and passive filter module |
| CN111342807B (en) * | 2018-12-18 | 2023-12-15 | 天津大学 | Filter with increased via area and electronic device |
| CN110504942B (en) * | 2019-08-09 | 2023-12-15 | 天津大学 | Bulk acoustic wave filter and electronic equipment |
| WO2021042346A1 (en) * | 2019-09-05 | 2021-03-11 | 刘宇浩 | Multiplexed device |
| CN110690868B (en) * | 2019-09-27 | 2021-02-19 | 无锡市好达电子股份有限公司 | Novel wafer-level packaging method for filter |
| CN110828950B (en) * | 2019-10-18 | 2022-05-10 | 天津大学 | Multiplexer |
| CN111541436A (en) * | 2020-04-26 | 2020-08-14 | 深圳市信维通信股份有限公司 | Forming method of filtering device |
| US11955950B2 (en) | 2020-04-26 | 2024-04-09 | Shenzhen Sunway Communication Co., Ltd. | Formation method of filter device |
| CN111510107B (en) * | 2020-04-30 | 2022-07-12 | 诺思(天津)微系统有限责任公司 | Filter element, multiplexer, and communication device |
| CN113556096B (en) * | 2021-07-26 | 2024-03-19 | 苏州汉天下电子有限公司 | Packaging substrate for duplexer and duplexer |
| CN113411091B (en) * | 2021-07-30 | 2022-06-24 | 广州慧智微电子有限公司 | Signal receiving device, method and storage medium |
| CN113793846A (en) * | 2021-09-28 | 2021-12-14 | 苏州科阳半导体有限公司 | Filter wafer-level packaging structure integrated with passive device and method thereof |
| CN114743996B (en) * | 2022-03-30 | 2023-12-08 | 象朵创芯微电子(苏州)有限公司 | Integrated passive device filter, radio frequency front end module and electronic equipment |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1756076A (en) * | 2004-09-28 | 2006-04-05 | 富士通媒体部品株式会社 | Duplexer |
| CN101079609A (en) * | 2006-05-22 | 2007-11-28 | 富士通媒体部品株式会社 | Balanced filter and duplexer |
| CN101534103A (en) * | 2009-04-03 | 2009-09-16 | 中国科学院上海微系统与信息技术研究所 | Radio frequency filter capable of single chip integration and manufacture method thereof |
| CN102111116A (en) * | 2010-11-24 | 2011-06-29 | 张�浩 | Integrated wafer level package |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101834178B (en) * | 2009-03-12 | 2012-08-08 | 日月光半导体制造股份有限公司 | Integration-type passive element and manufacturing method thereof |
| US8358179B2 (en) * | 2009-09-10 | 2013-01-22 | Stats Chippac, Ltd. | Semiconductor device and method of forming directional RF coupler with IPD for additional RF signal processing |
-
2013
- 2013-01-17 CN CN201310019705.3A patent/CN103138709B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1756076A (en) * | 2004-09-28 | 2006-04-05 | 富士通媒体部品株式会社 | Duplexer |
| CN101079609A (en) * | 2006-05-22 | 2007-11-28 | 富士通媒体部品株式会社 | Balanced filter and duplexer |
| CN101534103A (en) * | 2009-04-03 | 2009-09-16 | 中国科学院上海微系统与信息技术研究所 | Radio frequency filter capable of single chip integration and manufacture method thereof |
| CN102111116A (en) * | 2010-11-24 | 2011-06-29 | 张�浩 | Integrated wafer level package |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019120759A1 (en) * | 2017-12-21 | 2019-06-27 | RF360 Europe GmbH | Wafer arrangement, method of making same and hybrid filter |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103138709A (en) | 2013-06-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103138709B (en) | Radio-frequency filter and radio frequency multiplexer | |
| JP5677499B2 (en) | High frequency circuit module | |
| US8072292B2 (en) | High-frequency module | |
| JP2004129238A (en) | Bandstop filter, filter device, antenna duplexer, and communication device | |
| US7501915B2 (en) | High frequency module | |
| EP3902137A1 (en) | Band-pass filter and method for improving suppression level thereof, duplexer and electronic device | |
| JP4876658B2 (en) | Surface acoustic wave filter and communication device using the same | |
| CN113411069A (en) | Bulk acoustic wave filter device and method for improving out-of-band rejection | |
| WO2020071020A1 (en) | High-frequency module and communication device | |
| JP2005268878A (en) | Antenna duplexer | |
| CN105453428A (en) | High frequency module | |
| WO2012144036A1 (en) | Duplexer | |
| JP2021103713A (en) | High frequency module and communication device | |
| CN215186732U (en) | High-frequency module and communication device | |
| CN214756335U (en) | High-frequency module and communication device | |
| EP4325722A2 (en) | Semiconductor device, communication apparatus, and producing method thereof | |
| CN103208669B (en) | A kind of piezoelectric sound wave duplexer system | |
| JP2011259516A (en) | Surface acoustic wave filter and communication apparatus using the same | |
| CN111342806B (en) | Piezoelectric filter having lamb wave resonator, duplexer, and electronic device | |
| CN116073849B (en) | POP stacking integrated miniature broadband transceiving frequency conversion module and assembly method thereof | |
| WO2022034819A1 (en) | High-frequency module | |
| WO2022034818A1 (en) | High-frequency module | |
| US11729903B2 (en) | Radio frequency module and communication device | |
| CN114374369A (en) | Low temperature co-fired ceramic (LTCC) process-based duplexer with low-frequency transmission zero point | |
| US8797759B2 (en) | Electronic module and communication apparatus |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |