CN107910417A - Multi-colored led chip based on SiC - Google Patents
Multi-colored led chip based on SiC Download PDFInfo
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- CN107910417A CN107910417A CN201711382298.7A CN201711382298A CN107910417A CN 107910417 A CN107910417 A CN 107910417A CN 201711382298 A CN201711382298 A CN 201711382298A CN 107910417 A CN107910417 A CN 107910417A
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 37
- 229910052681 coesite Inorganic materials 0.000 claims description 34
- 229910052906 cristobalite Inorganic materials 0.000 claims description 34
- 239000000377 silicon dioxide Substances 0.000 claims description 34
- 229910052682 stishovite Inorganic materials 0.000 claims description 34
- 229910052905 tridymite Inorganic materials 0.000 claims description 34
- 230000004888 barrier function Effects 0.000 claims description 22
- 230000003287 optical effect Effects 0.000 claims description 20
- 229910002704 AlGaN Inorganic materials 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 7
- 238000000926 separation method Methods 0.000 claims description 5
- 241001062009 Indigofera Species 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 34
- 238000005036 potential barrier Methods 0.000 description 22
- 238000000034 method Methods 0.000 description 13
- 239000010931 gold Substances 0.000 description 12
- 238000010792 warming Methods 0.000 description 10
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 238000002360 preparation method Methods 0.000 description 7
- 238000000137 annealing Methods 0.000 description 6
- 238000001312 dry etching Methods 0.000 description 6
- 238000001259 photo etching Methods 0.000 description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 6
- 241000209094 Oryza Species 0.000 description 5
- 235000007164 Oryza sativa Nutrition 0.000 description 5
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- 244000247747 Coptis groenlandica Species 0.000 description 3
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- 229910052804 chromium Inorganic materials 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 229910000765 intermetallic Inorganic materials 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- PLXMOAALOJOTIY-FPTXNFDTSA-N Aesculin Natural products OC[C@@H]1[C@@H](O)[C@H](O)[C@@H](O)[C@H](O)[C@H]1Oc2cc3C=CC(=O)Oc3cc2O PLXMOAALOJOTIY-FPTXNFDTSA-N 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
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- 230000000694 effects Effects 0.000 description 1
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- 239000004973 liquid crystal related substance Substances 0.000 description 1
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- 229910002027 silica gel Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The present invention relates to a kind of multi-colored led chip based on SiC, which includes：Blue chip structure (10), feux rouges wick structure (20), green light chip structure (30), yellow light chip structure (40) in the embedded blue chip structure (10), wherein, the blue chip structure (10), the feux rouges wick structure (20), the green light chip structure (30), the yellow light chip structure (40) are adjacent successively；The feux rouges wick structure (20), the green light chip structure (30), the bottom of the yellow light chip structure (40) are respectively positioned in the cushion (101) of the blue chip structure.The embodiment of the present invention provides a kind of multi-colored led chip based on SiC, should the multi-colored led chip structure based on SiC is simple, integrated level is high, cost is low, colour temperature flexible adjustment, area occupied are small.
Description
Technical field
The invention belongs to LED chip technical field, and in particular to a kind of multi-colored led chip based on SiC.
Background technology
RGBY is liquid crystal technology of new generation, one kind of four primaries technology.RGBY is to form pixel in traditional three primary colors
On the basis of, the sub-pixel of a yellow is further added by, forms tetra- color pixels of RGBY.Because adding yellow Y, so as to widen whole
Colour gamut so that allow screen more vivo to reproduce yellow, golden these are difficult to truly by tradition RGB trichromatic techniques
The color of reproduction, makes picture color seem more details, the realistic colour seen closer to human eye；Four primaries can show
High brightness, improves light utilization efficiency, reduces the power consumption of whole display screen to a certain extent.
RGBY four primaries technology of the prior art is to encapsulate tri- color chips of RGB and the LED chip for sending white light
Together, when lamp bead will show white light, high-power white light can be utilized to be needed during substituting display caused by RGB combination in vain
Light.But various chips can be caused to mix using encapsulation technology, and there are poor reliability, the problem of encapsulation difficulty is big.
Therefore, how a kind of multi-colored led chip simple in structure, high reliability based on SiC is provided and has become research
Hot issue.
The content of the invention
In order to solve the above-mentioned problems in the prior art, the present invention provides a kind of multi-colored led core based on SiC
Piece.The technical problem to be solved in the present invention is achieved through the following technical solutions：
An embodiment of the present invention provides a kind of multi-colored led chip based on SiC, including：Blue chip structure 10, embedded institute
Red light chips structure 20 in blue chip structure 10, green light chip structure 30, yellow light chip structure 40 are stated, wherein, it is described red
Optical chip structure 20, the green light chip structure 30, the bottom of the yellow light chip structure 40 are respectively positioned on the blue chip knot
In the cushion 101 of structure 10.
In one embodiment of the invention, the blue chip structure 10 include be cascading SiC substrate 11,
Blue light GaN cushions 101, blue light GaN stabilized zones 102, blue light n-type GaN layer 103, blue light active layer 104, blue light p-type AlGaN
Barrier layer 105, blue light p-type GaN layer 106.
In one embodiment of the invention, the blue chip structure 10, the red light chips structure 20, the green light
Using SiO2 materials as separation layer between chip structure 30, the yellow light chip structure 40.
In one embodiment of the invention, the blue chip structure 10, the red light chips structure 20, the green light
Chip structure 30, the section of the yellow light chip structure 40 are rectangle.
In one embodiment of the invention, the blue chip structure 10, the red light chips structure 20, the green light
The adjacent linear arrangement successively of chip structure 30, the yellow light chip structure 40.
In one embodiment of the invention, the blue chip structure 10, the red light chips structure 20, the green light
The square arrangement in section of chip structure 30, the yellow light chip structure 40.
In one embodiment of the invention, the length of the rectangle and it is wide be all higher than 50 microns, less than 300 microns.
In one embodiment of the invention, the length of the rectangle and wide 100 microns are equal to.
In one embodiment of the invention, top electrode 51 and bottom electrode 52 are further included.
Beneficial effects of the present invention：
The embodiment of the present invention provides a kind of multi-colored led chip based on SiC, is somebody's turn to do the multi-colored led chip structure letter based on SiC
It is single, integrated level is high, cost is low, colour temperature flexible adjustment, area occupied are small.
Brief description of the drawings
Fig. 1 is a kind of structure diagram of the multi-colored led chip based on SiC provided in an embodiment of the present invention；
Fig. 2 is a kind of structure diagram of blue chip structure provided in an embodiment of the present invention；
Fig. 3 is a kind of blue light InGaN/GaN multi-quantum pit structure schematic diagrames provided in an embodiment of the present invention；
Fig. 4 is a kind of structure diagram of red light chips groove provided in an embodiment of the present invention；
Fig. 5 is a kind of structure diagram of red light chips structure provided in an embodiment of the present invention；
Fig. 6 is a kind of feux rouges GalnP/A1GaInP multi-quantum pit structure schematic diagrames provided in an embodiment of the present invention；
Fig. 7 is a kind of structure diagram of green light chip slot provided in an embodiment of the present invention；
Fig. 8 is a kind of structure diagram of green light chip structure 30 provided in an embodiment of the present invention；
Fig. 9 is a kind of green light InGaN/GaN multi-quantum pit structure schematic diagrames provided in an embodiment of the present invention；
Figure 10 is a kind of structure diagram of yellow light chip slot provided in an embodiment of the present invention；
Figure 11 is a kind of structure diagram of yellow light chip structure 40 provided in an embodiment of the present invention；
Figure 12 is a kind of yellow light InGaN/GaN multi-quantum pit structure schematic diagrames provided in an embodiment of the present invention；
Figure 13 is a kind of top view cross section structure diagram of the multi-colored led chip based on SiC provided in an embodiment of the present invention；
Figure 14 is a kind of side cross-sectional structure diagram of the multi-colored led chip based on SiC provided in an embodiment of the present invention；
Figure 15 is the top view cross section structural representation of another multi-colored led chip based on SiC provided in an embodiment of the present invention
Figure；
Figure 16 is the side cross-sectional structural representation of another multi-colored led chip based on SiC provided in an embodiment of the present invention
Figure；
Figure 17 is the top view cross section structural representation of another multi-colored led chip based on SiC provided in an embodiment of the present invention
Figure；
Figure 18 is the side cross-sectional structural representation of another multi-colored led chip based on SiC provided in an embodiment of the present invention
Figure.
Embodiment
Further detailed description is done to the present invention with reference to specific embodiment, but embodiments of the present invention are not limited to
This.
Embodiment one
Fig. 1, Figure 13, Figure 14 are referred to, Fig. 1 is a kind of multi-colored led chip based on SiC provided in an embodiment of the present invention
Structure diagram, Figure 13 are a kind of top view cross section structural representation of the multi-colored led chip based on SiC provided in an embodiment of the present invention
Figure；Figure 14 is a kind of side cross-sectional structure diagram of the multi-colored led chip based on SiC provided in an embodiment of the present invention；The base
Include in the multi-colored led chip of SiC：
Blue chip structure 10, red light chips structure 20, green light chip structure in the embedded blue chip structure 10
30th, yellow light chip structure 40, wherein,
The blue chip structure 10, the red light chips structure 20, the green light chip structure 30, the yellow light chip
Structure 40 is adjacent successively；The red light chips structure 20, the green light chip structure 30, the bottom of the yellow light chip structure 40
It is respectively positioned in the cushion 101 of the blue chip structure.
The embodiment of the present invention provides a kind of multi-colored led chip based on SiC, is somebody's turn to do the multi-colored led chip structure letter based on SiC
It is single, integrated level is high, cost is low, colour temperature flexible adjustment, area occupied are small.
Embodiment two
For the present embodiment on the basis of above-described embodiment, emphasis carries out a kind of structure of multi-colored led chip based on SiC
It is described in detail, being somebody's turn to do the multi-colored led chip based on SiC includes:
Blue chip structure 10, red light chips structure 20, green light chip structure in the embedded blue chip structure 10
30th, yellow light chip structure 40, wherein,
The blue chip structure 10, the red light chips structure 20, the green light chip structure 30, the yellow light chip
Structure 40 is adjacent successively；The red light chips structure 20, the green light chip structure 30, the bottom of the yellow light chip structure 40
It is respectively positioned in the cushion 101 of the blue chip structure.
Wherein, the blue chip structure 10 include be cascading SiC substrate 11, blue light GaN cushions 101,
Blue light GaN stabilized zones 102, blue light n-type GaN layer 103, blue light active layer 104, blue light p-type AlGaN barrier layers 105, blue light p-type
GaN layer 106.
Wherein, the blue chip structure 10, the red light chips structure 20, the green light chip structure 30, the Huang
There is oxidization isolation layer between optical chip structure 40.
Wherein, the oxidization isolation layer is SiO2。
Wherein, the blue chip structure 10, the red light chips structure 20, the green light chip structure 30, the Huang
Optical chip structure 40 is rectangle.
Wherein, the length of the rectangle and it is wide be all higher than 50 microns, less than 300 microns.
Wherein, the length of the rectangle and wide 100 microns are equal to.
Wherein, the blue chip structure 10, the red light chips structure 20, the green light chip structure 30, the Huang
The adjacent linear arrangement successively of optical chip structure 40.
Wherein, the blue chip structure 10, the red light chips structure 20, the green light chip structure 30, the Huang
Optical chip structure 40 is square arrangement.
Wherein, top electrode 51 and bottom electrode 52 are further included.Wherein, top electrode 51 include blue light top electrode, feux rouges top electrode,
Green light top electrode, yellow light top electrode.
The multi-colored led chip based on SiC of the embodiment of the present invention is by blue light, feux rouges, green light, yellow light four primaries ray structure
It is integrated on one chip, special area is small.Centre passes through SiO2Oxidization isolation layer is isolated, and each ray structure has
Single top electrode, can individually control the luminous size of every kind of ray structure, and colour temperature control is flexible.The polychrome based on SiC
LED chip structure is simple, integrated level is high, cost is low, colour temperature flexible adjustment, area occupied are small.
Embodiment three
The present embodiment is on the basis of above-described embodiment, and emphasis is to a kind of preparation method of the multi-colored led chip based on SiC
It is described in detail, includes the following steps：
S01：Substrate 11 is chosen, and blue chip structure 10 is grown on the substrate 11.Fig. 2 is referred to, Fig. 2 is this hair
A kind of structure diagram for blue chip structure 10 that bright embodiment provides, specific steps include：
S011：SiC substrate 11 is chosen, growth thickness is 3000-5000 nanometers of blue light GaN cushions on the substrate 11
101, growth temperature is 400-600 DEG C；
Preferably, growth temperature is 500 DEG C, and the thickness of blue light GaN cushions 101 is 4000 nanometers.
S012：900-1050 DEG C is warming up to, growth thickness is 500 nanometers -1500 nanometers on blue light GaN cushions 101
Blue light GaN stabilized zones 102；
Preferably, the growth temperature of blue light GaN stabilized zones 102 is 1000 DEG C, and growth thickness is 1000 nanometers.
S013：Keep temperature-resistant, the 200-1000 nanometers of N-shaped blue lights for mixing Si are grown on blue light GaN stabilized zones 102
GaN layer 103, doping concentration are 1 × 1018-5×1019cm-3；
Preferably, the growth temperature of blue light GaN layer 103 is 1000 DEG C, and the thickness of blue light GaN layer 103 is 400 nanometers, is mixed
Miscellaneous concentration is 1 × 1019cm-3。
S014：Fig. 3 is referred to, Fig. 3 shows for a kind of blue light InGaN/GaN multi-quantum pit structures provided in an embodiment of the present invention
It is intended to, blue light InGaN/GaN multi-quantum pit structures is grown in blue light n-type GaN layer 103 as blue light active layer 104, wherein：
The growth temperature of blue light InGaN Quantum Well 104b is 650-750 DEG C, and the growth temperature of blue light GaN potential barriers 104a is 750-850
℃；The blue light InGaN/GaN multiple quantum wells cycles are 8-30, and blue light InGaN Quantum Well 104b thickness is 1.5-3.5 nanometers, wherein
The content of In is about 10-20%；Blue light GaN potential barrier 104a thickness is 5-10 nanometers；
Preferably, the growth temperature of blue light InGaN Quantum Well 104b is 750 DEG C, the growth temperature of blue light GaN potential barriers 104a
For 850 DEG C, the thickness of blue light InGaN Quantum Well 104b is 2.8 nanometers, and the thickness of blue light GaN potential barriers 104a is 5 nanometers, blue light
The InGaN/GaN multiple quantum wells cycles are 20.
Wherein, In contents are determined according to optical wavelength, and content is higher, and optical wavelength is longer.
S015：850-950 DEG C is warming up to, 10-40 nano blue lights p is grown on blue light InGaN/GaN multi-quantum pit structures
Type AlGaN barrier layers 105.
Preferably, the growth temperature on blue light p-type AlGaN barrier layers 105 is 900 DEG C, its thickness is 20 nanometers.
S016：100-300 nanometers of blue light p-type GaN layer 106 is grown on the blue light p-type AlGaN barrier layers 105, is made
Used for contact.
Preferably, 106 growth temperature of blue light p-type GaN layer is 900 DEG C, its thickness is 200 nanometers.
S02：Feux rouges wick groove is formed in the blue chip structure 10, refers to Fig. 4 and Figure 13, Fig. 4 is the present invention
A kind of structure diagram for feux rouges wick groove that embodiment provides；Figure 13 is provided in an embodiment of the present invention a kind of based on SiC's
The top view cross section structure diagram of multi-colored led chip；Specifically include：
S021：On 106 surface of blue light p-type GaN layer, PECVD methods deposit the first SiO2Layer, thickness are received for 300-800
Rice；
Preferably, the first SiO2The thickness of layer is 500 nanometers.
S022：In the first SiO2Feux rouges wick window is etched with wet-etching technology on layer, the window is rectangle,
The length of rectangle and it is wide be all higher than 50 microns, less than 300 microns.
Preferably, the length of rectangle and it is wide it is equal be 100 microns.
S023：With material under dry etching feux rouges wick window, etch into always on blue light GaN cushions 101；
S024：Remove remaining first SiO2Layer；
S025：In the first SiO2The 2nd SiO is deposited on layer2Layer, the 2nd SiO2Layer thickness is 20-100 nanometers；
Preferably, the 2nd SiO2Layer thickness is 50 nanometers.
S026：With the 2nd SiO of dry etching surface2Layer, the first SiO is formed in feux rouges wick groove surrounding2Separation layer 12.
S03：Red light chips structure 20 is grown in the feux rouges wick groove, refers to Fig. 5, Fig. 5 is the embodiment of the present invention
A kind of structure diagram of the red light chips structure 20 provided；Specifically include：
S031：In in feux rouges wick groove, growth feux rouges GaN cushions 201,2000-3000 nanometers of thickness.
Preferably, the thickness of the feux rouges GaN cushions 201 is 2500 nanometers.
S032：Feux rouges N-shaped GaAs cushions 202 are grown on the feux rouges GaN cushions 201, thickness 1000-2000 receives
Rice, doping concentration are 1 × 1017-1×1018cm-3；
Preferably, 202 thickness of feux rouges N-shaped GaAs cushions is 1500 nanometers, and doping concentration is 5 × 1017cm-3。
S033：203,500 nanometers -1000 nanometers of feux rouges N-shaped GaAs stabilized zones are grown, doping concentration is 1 × 1018-5×
1019cm-3；
Preferably, the thickness of feux rouges N-shaped GaAs stabilized zones 203 is 200 nanometers, and doping concentration is 1 × 1019cm-3。
S034：Fig. 6 is referred to, Fig. 6 is a kind of feux rouges GalnP/A1GaInP multiple quantum wells knots provided in an embodiment of the present invention
Structure schematic diagram；Feux rouges GalnP/A1GaInP multi-quantum pit structures are grown on feux rouges N-shaped GaAs stabilized zones 203 to be had as feux rouges
Active layer 204, Quantum Well cycle are 8-30, and feux rouges GalnP quantum well thickness is 2-10 nanometers, and feux rouges A1GaInP potential barriers 204b is thick
Spend for 5-10 nanometers；Wherein the content of Al is about 10-40%；
Preferably, feux rouges GalnP quantum well thickness is 7 nanometers, and the thickness of feux rouges A1GaInP potential barriers 204b is 7 nanometers, Al
Content is determined according to optical wavelength, and content is higher, and optical wavelength is longer, the cycle 20.
S035：Grow feux rouges p-type A1GaInP barrier layers 205, the wherein content of Al is more than 30%, doping concentration for 1 ×
1017-1×1019cm-3, thickness is 10-500 nanometers.
Preferably, the content of Al is 40% in feux rouges p-type A1GaInP barrier layers 205, feux rouges p-type A1GaInP barrier layers
205 thickness are 100 nanometers, and doping concentration is 1 × 1018cm-3。
S036：GaAs layers of feux rouges p-type is grown on feux rouges p-type A1GaInP barrier layers 205 and is used as feux rouges contact layer 206, is mixed
Miscellaneous concentration is 1 × 1017-1×1019cm-3, thickness is 100-500 nanometers.
Preferably, the thickness of feux rouges contact layer 206 is 150 nanometers, and doping concentration is 1 × 1018cm-3。
S04：Green light wick groove is formed in the blue chip structure 10, green light wick groove is located at the feux rouges wick groove
Adjacent position, refer to Fig. 7 and referring again to Figure 13, Fig. 7 is a kind of green light wick groove provided in an embodiment of the present invention
Structure diagram；Specifically include：
S041：On 106 surface of blue light p-type GaN layer, PECVD methods deposit the first SiO2Layer, thickness are received for 300-800
Rice；
Preferably, the first SiO2The thickness of layer is 500 nanometers.
S042：In the first SiO2Green light wick window is etched with wet-etching technology on layer, the window is rectangle,
The length of rectangle and it is wide be all higher than 50 microns, less than 300 microns.
Preferably, the length of rectangle and it is wide it is equal be 100 microns.
S043：With material under dry etching green light wick window, etch into always on blue light GaN cushions 101；It is preferred that
Ground, the bottom of the green light wick groove are located in the half height of the blue light GaN cushions 101.
S044：Remove remaining first SiO2Layer；
S045：In the first SiO2The 2nd SiO is deposited on layer2Layer, the 2nd SiO2Layer thickness is 20-100 nanometers；
Preferably, the 2nd SiO2Layer thickness is 50 nanometers.
S046：With the 2nd SiO of dry etching surface2Layer, the first SiO is formed in green light wick groove surrounding2Separation layer 12.
S05：Green light chip structure 30 is grown in the green light wick groove；Fig. 8 is referred to, Fig. 8 is the embodiment of the present invention
A kind of structure diagram of the green light chip structure 30 provided；
S051：In green light chip preparation vessel, growth thickness is 3000-5000 nanometers of green light GaN cushions 301, raw
Long temperature is 400-600 DEG C；
Preferably, 301 growth temperature of green light GaN cushions is 500 DEG C, and thickness is 4000 nanometers.
S052：900-1050 DEG C is warming up to, growth thickness is 500 nanometers -1500 nanometers on green light GaN cushions 301
Green light GaN stabilized zones 302；
Preferably, 302 growth temperature of green light GaN stabilized zones is 1000 DEG C, and thickness is 1000 nanometers.
S053：It is temperature-resistant, the 200-1000 nanometers of green light n-type GaN layers for mixing Si are grown on green light GaN stabilized zones 302
303, doping concentration is 1 × 1018-5×1019cm-3；
Preferably, the growth temperature of green light n-type GaN layer 303 is 1000 DEG C, and thickness is 400 nanometers, doping concentration for 1 ×
1019cm-3。
S054：Fig. 9 is refer to, Fig. 9 shows for a kind of green light InGaN/GaN multi-quantum pit structures provided in an embodiment of the present invention
It is intended to；Green light InGaN/GaN multi-quantum pit structures are grown in green light n-type GaN layer 303 as green light active layer 304, wherein green
The growth temperature of light for InGaN Quantum Well 304b is 650-750 DEG C, and the growth temperature of green light GaN potential barriers 304a is 750-850 DEG C；
The Quantum Well cycle is 8-30, and green light InGaN Quantum Well 304b thickness is 1.5-3.5 nanometers, and the wherein content of In is about 20-
30%；Green light GaN potential barrier thickness is 5-10 nanometers.
Preferably, green light InGaN Quantum Well 304b growth temperatures are 750 DEG C, and green light GaN potential barrier 304a growth temperatures are
850 DEG C, green light InGaN Quantum Well 304b thickness be 2.8 nanometers, green light GaN potential barrier 304a thickness be 5 nanometers, In content foundations
Optical wavelength is determined, and content is higher, and optical wavelength is longer, and the Quantum Well cycle is 20.
S055：850-950 DEG C is warming up to, 10-40 nanometers of green light p is grown on green light InGaN/GaN multi-quantum pit structures
Type AlGaN barrier layers 305.
Preferably, the growth temperature on green light p-type AlGaN barrier layers 305 be 900 DEG C, green light p-type AlGaN barrier layers 305
Thickness is 20 nanometers.
S056：100-300 nanometers of green light p-type GaN layer 306 is grown on green light p-type AlGaN barrier layers 305, as connecing
Touch and use.
Preferably, the growth temperature of green light p-type GaN layer 306 is 850 DEG C, and thickness is 200 nanometers.
S06：Yellow light wick groove is formed in the blue chip structure 10；Figure 10 is referred to, Figure 10 is implemented for the present invention
A kind of structure diagram for yellow light wick groove that example provides；Repeat step S02, yellow light is prepared in green light wick groove adjacent position
Wick groove.Wherein, yellow light wick groove is rectangle, the length of rectangle and it is wide be all higher than 50 microns, less than 300 microns.
Preferably, the length of rectangle and it is wide it is equal be 100 microns.
S07：Yellow light chip structure 40 is grown in the yellow light wick groove；Figure 11 is referred to, Figure 11 is implemented for the present invention
A kind of structure diagram for yellow light chip structure 40 that example provides；
S071：In yellow light wick groove, growth thickness is 3000-5000 nanometers of yellow light GaN cushions 401, and growth is warm
Spend for 400-600 DEG C；
Preferably, the growth temperature of yellow light GaN cushions 401 is 500 DEG C, and thickness is 4000 nanometers.
S072：900-1050 DEG C is warming up to, growth thickness is 500 nanometers -1500 nanometers on yellow light GaN cushions 401
Yellow light GaN stabilized zones 402；
Preferably, the growth temperature of yellow light GaN stabilized zones 402 is 1000 DEG C, and thickness is 1000 nanometers.
S073：It is temperature-resistant, the 200-1000 nanometers of yellow light n-type GaN layers for mixing Si are grown on yellow light GaN stabilized zones 402
403, doping concentration is 1 × 1018-5×1019cm-3；
Preferably, the temperature of yellow light n-type GaN layer 403 is 1000 DEG C, and thickness is 400 nanometers, doping concentration for 1 ×
1019cm-3。
S074：It is a kind of yellow light InGaN/GaN multi-quantum pit structures provided in an embodiment of the present invention to please refer to Fig.1 2, Figure 12
Schematic diagram；Yellow light InGaN/GaN multi-quantum pit structures are grown in yellow light n-type GaN layer 403 as yellow light active layer 404, wherein
The growth temperature of yellow light InGaN Quantum Well 404b is 650-750 DEG C, and the growth temperature of yellow light GaN potential barriers 404a is 750-850
℃；The Quantum Well cycle is 8-30, and the thickness of yellow light InGaN Quantum Well 404b is 1.5-3.5 nanometers, and the wherein content of In is about
30-40%；The thickness of yellow light GaN potential barriers 404a is 5-10 nanometers；
Preferably, yellow light InGaN Quantum Well 404b growth temperatures are 750 DEG C, and the growth temperature of yellow light GaN potential barriers 404a is
850 DEG C, the thickness of yellow light InGaN Quantum Well 404b is 2.8 nanometers, and the thickness of yellow light GaN potential barriers 404a is 5 nanometers, In contents
Determine according to optical wavelength, content is higher, and optical wavelength is longer, and the Quantum Well cycle is 20.
S075：850-950 DEG C is warming up to, 10-40 nanometers of yellow light p-type is grown in yellow light InGaN/GaN multiple quantum wells
AlGaN barrier layers 405.
Preferably, yellow light InGaN/GaN multiple quantum wells growth temperature is 900 DEG C, and thickness is 20 nanometers.
S076：100-300 nanometers of yellow light p-type GaN layer 406 is grown on yellow light p-type AlGaN barrier layers 405, as connecing
Touch and use.
Preferably, the growth temperature of yellow light p-type GaN layer 406 is 850 DEG C, and thickness is 200 nanometers.
S08：Electrode and scribing are made to form the multi-colored led chip based on SiC.
S081：The 7th SiO is deposited using PECVD in chip surface2Layer, thickness are 300-800 nanometers, it is preferable that thickness
For 500 nanometers.
S082：Using dry etch process, in the 7th SiO2It is the blue light wick window on layer, feux rouges wick window, green
It is corresponding on light wick window, yellow light wick window to etch electricity under blue light bottom electrode window, feux rouges bottom electrode window, green light respectively
Pole window, yellow light bottom electrode window, etch away layer material therein, etch into blue light GaN stabilized zones 102, feux rouges N-shaped respectively
GaAs cushions 202, green light GaN stabilized zones 302, yellow light GaN stabilized zones 402.
S083：Remove the 7th SiO on surface2Layer, then deposit the 8th SiO2Layer 107, thickness are 300-800 nanometers, preferably
Ground, the 8th SiO2The thickness of layer 107 is 500 nanometers, is connect in the blue light p-type GaN layer 106, green light p-type GaN layer 206, feux rouges
Top electrode contact window is etched respectively in contact layer 306, yellow light p-type GaN layer 406, in blue light GaN stabilized zones 102, feux rouges N-shaped
GaAs cushions 202, green light GaN stabilized zones 302, etch bottom electrode contact window on yellow light GaN stabilized zones 402 respectively.
S084：Evaporation metal Cr/Pt/Au electrodes, wherein, Cr thickness is 20-40 nanometers, and Pt thickness is 20-40 nanometers, Au
Thickness is 800-1500 nanometers；Preferably, the thickness of Cr, Pt, Au are followed successively by 30,30,1200 nanometers.
S085：Cr/Pt/Au electrodes are made annealing treatment, temperature is 300-500 DEG C, forms metallic compound, and
Remove metal；Preferably, annealing temperature is 350 DEG C.Wherein, it is 51 that top electrode contact window, which forms top electrode fairlead, lower electricity
It is 52 that pole contact window, which forms bottom electrode fairlead,.Figure 14 is referred to, Figure 14 is based on SiC for one kind provided in an embodiment of the present invention
Multi-colored led chip side cross-sectional structure diagram；
S086：Deposit metal, photoetching lead；
S087：SiO is deposited using pecvd process2Passivation layer；
S088：Figure photoetching, exposes the region where electrode pad, draws gold thread subsequently to encapsulate；
S089：SiC is served as a contrast into 11 bottom back sides and is thinned to less than 150 microns；
S0810：Back side metallized reflective layer, material can be Al, Ni, Ti etc..
S0811：Scribing.
The embodiment of the present invention uses and makes feux rouges wick groove, green light wick groove, yellow light successively in blue chip structure 10
The technique of wick groove, because during wicking is formed, the necessary position of the deposit of material is accurate in each wick groove, if adopted
With cutting at the same time and then the mode for sequentially forming wicking again the wicking in each groove can be caused impure, each wick groove
Material adulterates mutually, causes the LED chip of preparation second-rate.
Root inventive embodiments make respective bottom electrode in different wick grooves, and control is flexible, overall chip integration
Height, area occupied is small, and thermal diffusivity is good.
Embodiment three
The present embodiment is on the basis of above-described embodiment, preparation side of the emphasis to multi-colored led chip of the another kind based on SiC
Method is described in detail, and the step S01~S07 for repeating above-described embodiment two is sequentially prepared blue chip structure 10, red light chips
Structure 20, green light chip structure 30, yellow light chip structure 40.The subsequent step unlike above-described embodiment two is changed into：
S08：Make light-transmissive film 1001；
In the blue light p-type GaN layer 106, green light p-type GaN layer 206, feux rouges contact layer 306, yellow light p-type GaN layer 406
Light-transmissive film 1001 is prepared, material can be TiO2Or ZnS.The thickness of light-transmissive film 1001 is the 1/4 of blue light wavelength.
Wherein, increase prepares light-transmissive film by reducing the Fresnel effects between chip and Air Interface to improve light extraction
Efficiency.The plated film in LED chip, the film refractive index is between silica gel and LED chip surfacing, when thickness where appropriate, reflection
Optical path difference is exactly half-wavelength on the two sides of film, can just offset, except material can sponge a part of light in itself
Line, other incident lights are completely by reducing the Fresnel consumption on interface, the light of chip active layer just being capable of more spoke
It is shot out, which thereby enhances the efficiency of light extraction of LED.
S09：Electrode and scribing are made to form the multi-colored led chip based on SiC.
S091：The 7th SiO is deposited using PECVD in chip surface2Layer, thickness are 300-800 nanometers, it is preferable that thickness
For 500 nanometers.
S092：Using dry etch process, in the 7th SiO2The feux rouges wick groove, the green light wick groove, institute on layer
State to etch outside yellow light wick groove and share bottom electrode window until the blue light GaN stabilized zones 102.Wherein, because the red globe lamp
Core groove, the green light wick groove, the bottom of the yellow light wick groove etch into blue light GaN cushions 101, blue light GaN cushions
101 have certain doping with 102 layers of blue light GaN stabilized zones, therefore, the blue chip structure 10, the red light chips structure
20th, the green light chip structure 30, the yellow light chip structure 40 can share bottom electrode window, so make manufacture craft more
Simply, structure is also simpler.
S093：It is another kind provided in an embodiment of the present invention based on SiC's referring again to Figure 15 and referring to Figure 16, Figure 16
The side cross-sectional structure diagram of multi-colored led chip；Remove the 7th SiO on surface2Layer, then deposit the 8th SiO2Layer 107, thickness
For 300-800 nanometers, it is preferable that the 8th SiO2The thickness of layer 107 is 500 nanometers, is sequentially etched on the anti-reflection film 1001
Top electrode contact window, in blue light GaN stabilized zones 102, feux rouges N-shaped GaAs cushions 202, green light GaN stabilized zones 302, yellow light
Bottom electrode contact window is etched on GaN stabilized zones 402 respectively.
S094：Evaporation metal Cr/Pt/Au electrodes, wherein, Cr thickness is 20-40 nanometers, and Pt thickness is 20-40 nanometers, Au
Thickness is 800-1500 nanometers；Preferably, the thickness of Cr, Pt, Au are followed successively by 30,30,1200 nanometers.
S095：Cr/Pt/Au electrodes are made annealing treatment, temperature is 300-500 DEG C, forms metallic compound, and
Remove residual metallic；Preferably, annealing temperature is 350 DEG C.Top electrode contact window forms top electrode fairlead 51, and bottom electrode connects
Touch window and form bottom electrode fairlead 52.
S096：Deposit metal, photoetching lead；
S097：SiO is deposited using pecvd process2Passivation layer；
S098：Figure photoetching, exposes the region where electrode pad, draws gold thread subsequently to encapsulate；
S099：SiC is served as a contrast into 11 bottom back sides and is thinned to less than 150 microns；
S0910：Back side metallized reflective layer, material can be Al, Ni, Ti etc..
S0911：Scribing.
Example IV
The present embodiment is on the basis of above-described embodiment two, preparation of the emphasis to another multi-colored led chip based on SiC
Method is described in detail, and the step S01~S03 for repeating above-described embodiment two is sequentially prepared blue chip structure 10, feux rouges core
Chip architecture 20, the subsequent step different from above-described embodiment two are as follows：
S04：Green light wick groove is formed in the blue chip structure 10；Fig. 7 and Figure 17 are referred to, Fig. 7 is the present invention
A kind of structure diagram for green light wick groove that embodiment provides；Figure 17 for it is provided in an embodiment of the present invention another be based on SiC
Multi-colored led chip top view cross section structure diagram；The 10 diagonally opposing corner side of blue chip structure in feux rouges wick groove adjacent position
Green light wick groove is prepared to place.Wherein, green light wick groove is rectangle, the length of rectangle and it is wide be all higher than 50 microns, it is micro- less than 300
Rice.
S041：On 106 surface of blue light p-type GaN layer, PECVD methods deposit the first SiO2Layer, thickness are received for 300-800
Rice；
Preferably, the first SiO2The thickness of layer is 500 nanometers.
S042：In the first SiO2Green light wick window is etched with wet-etching technology on layer, the window is rectangle,
The length of rectangle and it is wide be all higher than 50 microns, less than 300 microns.
Preferably, the length of rectangle and it is wide it is equal be 100 microns.
S043：With material under dry etching green light wick window, etch into always on blue light GaN cushions 101；It is preferred that
Ground, the bottom of the green light wick groove are located in the half height of the blue light GaN cushions 101.
S044：Remove remaining first SiO2Layer；
S045：In the first SiO2The 2nd SiO is deposited on layer2Layer, the 2nd SiO2Layer thickness is 20-100 nanometers；
Preferably, the 2nd SiO2Layer thickness is 50 nanometers.
S046：With the 2nd SiO of dry etching surface2Layer, the first SiO is formed in green light wick groove surrounding2Separation layer 12.
Preferably, the length of rectangle and it is wide it is equal be 100 microns.
S05：Green light chip structure 30 is grown in the green light wick groove；Fig. 8 is referred to, Fig. 8 is the embodiment of the present invention
A kind of structure diagram of the green light chip structure 30 provided；
S051：In green light chip preparation vessel, growth thickness is 3000-5000 nanometers of green light GaN cushions 301, raw
Long temperature is 400-600 DEG C；
Preferably, 301 growth temperature of green light GaN cushions is 500 DEG C, and thickness is 4000 nanometers.
S052：900-1050 DEG C is warming up to, growth thickness is 500 nanometers -1500 nanometers on green light GaN cushions 301
Green light GaN stabilized zones 302；
Preferably, 302 growth temperature of green light GaN stabilized zones is 1000 DEG C, and thickness is 1000 nanometers.
S053：It is temperature-resistant, the 200-1000 nanometers of green light n-type GaN layers for mixing Si are grown on green light GaN stabilized zones 302
303, doping concentration is 1 × 1018-5 × 1019cm-3；
Preferably, the growth temperature of green light n-type GaN layer 303 is 1000 DEG C, and thickness is 400 nanometers, doping concentration for 1 ×
1019cm-3。
S054：Referring again to Fig. 9, green light InGaN/GaN multi-quantum pit structures work is grown in green light n-type GaN layer 303
For green light active layer 304, the wherein growth temperature of green light InGaN Quantum Well 304b is 650-750 DEG C, green light GaN potential barriers 304a
Growth temperature be 750-850 DEG C；The Quantum Well cycle is 8-30, and green light InGaN Quantum Well 304b thickness is 1.5-3.5 nanometers,
Wherein the content of In is about 30-40%；Green light GaN potential barrier thickness is 5-10 nanometers.
Preferably, green light InGaN Quantum Well 304b growth temperatures are 750 DEG C, and green light GaN potential barrier 304a growth temperatures are
850 DEG C, green light InGaN Quantum Well 304b thickness be 2.8 nanometers, green light GaN potential barrier 304a thickness be 5 nanometers, In content foundations
Optical wavelength is determined, and content is higher, and optical wavelength is longer, and the Quantum Well cycle is 20.
S055：850-950 DEG C is warming up to, 10-40 nanometers of green light p is grown on green light InGaN/GaN multi-quantum pit structures
Type AlGaN barrier layers 305.
Preferably, the growth temperature on green light p-type AlGaN barrier layers 305 be 900 DEG C, green light p-type AlGaN barrier layers 305
Thickness is 20 nanometers.
S056：100-300 nanometers of green light p-type GaN layer 306 is grown on green light p-type AlGaN barrier layers 305, as connecing
Touch and use.
Preferably, the growth temperature of green light p-type GaN layer 306 is 850 DEG C, and thickness is 200 nanometers.
S06：Yellow light wick groove is formed in the blue chip structure 10；Figure 10 is referred to, Figure 10 is implemented for the present invention
A kind of structure diagram for yellow light wick groove that example provides；Repeat step S02, yellow light is prepared in green light wick groove adjacent position
Wick groove, blue chip structure 10, feux rouges wick groove, green light wick groove, yellow light wick groove are located at square corner, wherein, it is yellow
Light wick groove is rectangle, the length of rectangle and it is wide be all higher than 50 microns, less than 300 microns.
Preferably, the length of rectangle and it is wide it is equal be 100 microns.
S07：Yellow light chip structure 40 is grown in the yellow light wick groove；Figure 11 is referred to, Figure 11 is implemented for the present invention
A kind of structure diagram for yellow light chip structure 40 that example provides；
S071：In yellow light wick groove, growth thickness is 3000-5000 nanometers of yellow light GaN cushions 401, and growth is warm
Spend for 400-600 DEG C；
Preferably, the growth temperature of yellow light GaN cushions 401 is 500 DEG C, and thickness is 4000 nanometers.
S072：900-1050 DEG C is warming up to, growth thickness is 500 nanometers -1500 nanometers on yellow light GaN cushions 401
Yellow light GaN stabilized zones 402；
Preferably, the growth temperature of yellow light GaN stabilized zones 402 is 1000 DEG C, and thickness is 1000 nanometers.
S073：It is temperature-resistant, the 200-1000 nanometers of yellow light n-type GaN layers for mixing Si are grown on yellow light GaN stabilized zones 402
403, doping concentration is 1 × 1018-5×1019cm-3；
Preferably, the temperature of yellow light n-type GaN layer 403 is 1000 DEG C, and thickness is 400 nanometers, doping concentration for 1 ×
1019cm-3。
S074：Referring again to Figure 12, yellow light InGaN/GaN multi-quantum pit structures are grown in yellow light n-type GaN layer 403
As yellow light active layer 404, the wherein growth temperature of yellow light InGaN Quantum Well 404b is 650-750 DEG C, yellow light GaN potential barriers
The growth temperature of 404a is 750-850 DEG C；The Quantum Well cycle is 8-30, and the thickness of yellow light InGaN Quantum Well 404b is 1.5-3.5
Nanometer, wherein the content of In is about 30-40%；The thickness of yellow light GaN potential barriers 404a is 5-10 nanometers；
Preferably, yellow light InGaN Quantum Well 404b growth temperatures are 750 DEG C, and the growth temperature of yellow light GaN potential barriers 404a is
850 DEG C, the thickness of yellow light InGaN Quantum Well 404b is 2.8 nanometers, and the thickness of yellow light GaN potential barriers 404a is 5 nanometers, In contents
Determine according to optical wavelength, content is higher, and optical wavelength is longer, and the Quantum Well cycle is 20.
S075：850-950 DEG C is warming up to, 10-40 nanometers of yellow light p-type is grown in yellow light InGaN/GaN multiple quantum wells
AlGaN barrier layers 405.
Preferably, yellow light InGaN/GaN multiple quantum wells growth temperature is 900 DEG C, and thickness is 20 nanometers.
S076：100-300 nanometers of yellow light p-type GaN layer 406 is grown on yellow light p-type AlGaN barrier layers 405, as connecing
Touch and use.
Preferably, the growth temperature of yellow light p-type GaN layer 406 is 850 DEG C, and thickness is 200 nanometers.
S08：Make light-transmissive film；
In the blue light p-type GaN layer 106, green light p-type GaN layer 206, feux rouges contact layer 306, yellow light p-type GaN layer 406
Light-transmissive film is prepared, material can be TiO2Or ZnS.The thickness of light-transmissive film is the 1/4 of blue light wavelength.
S09：Electrode and scribing are made to form the multi-colored led chip based on SiC.
S091：The 7th SiO is deposited using PECVD in chip surface2Layer, thickness are 300-800 nanometers, it is preferable that thickness
For 500 nanometers.
S092：Using dry etch process, in the 7th SiO2Etched on layer and share bottom electrode window, it is steady positioned at blue light GaN
In given layer 102.Wherein, because the feux rouges wick groove, the green light wick groove, the bottom of the yellow light wick groove etch into indigo plant
On light GaN cushions 101, blue light GaN cushions 101 have certain doping with 102 layers of blue light GaN stabilized zones, therefore, the indigo plant
Optical chip structure 10, the red light chips structure 20, the green light chip structure 30, the yellow light chip structure 40 can share
Bottom electrode window, so makes that manufacture craft is simpler, and structure is also simpler.
S093：Referring again to Figure 17 and referring to Figure 18, Figure 18 for it is provided in an embodiment of the present invention another based on SiC's
The side cross-sectional structure diagram of multi-colored led chip.Remove the 7th SiO on surface2Layer, then deposit the 8th SiO2Layer 107, thickness
For 300-800 nanometers, it is preferable that the 8th SiO2The thickness of layer 107 is 500 nanometers, in the blue light p-type GaN layer 106, green light p
Type GaN layer 206, feux rouges contact layer 306, be sequentially etched top electrode contact window in yellow light p-type GaN layer 406；
S094：Evaporation metal Cr/Pt/Au electrodes, wherein, Cr thickness is 20-40 nanometers, and Pt thickness is 20-40 nanometers, Au
Thickness is 800-1500 nanometers；Preferably, the thickness of Cr, Pt, Au are followed successively by 30,30,1200 nanometers.
S095：Cr/Pt/Au electrodes are made annealing treatment, temperature is 300-500 DEG C, forms metallic compound, and
Remove residual metallic；Preferably, annealing temperature is 350 DEG C.Top electrode contact window forms top electrode fairlead 51, and bottom electrode connects
Touch window and form bottom electrode fairlead 52.
S096：Deposit metal, photoetching lead；
S097：SiO is deposited using pecvd process2Passivation layer；
S098：Figure photoetching, exposes the region where electrode pad, draws gold thread subsequently to encapsulate；
S099：SiC is served as a contrast into 11 bottom back sides and is thinned to less than 150 microns；
S0910：Back side metallized reflective layer, material can be Al, Ni, Ti etc..
S0911：Scribing.
Compared with prior art, the present invention provides a kind of preparation method of the multi-colored led chip based on SiC, party's legal system
Standby multi-colored led chip its integrated level based on SiC is high, cost is low, colour temperature flexible adjustment, small.
Above content is that a further detailed description of the present invention in conjunction with specific preferred embodiments, it is impossible to is assert
The specific implementation of the present invention is confined to these explanations.For general technical staff of the technical field of the invention,
On the premise of not departing from present inventive concept, some simple deduction or replace can also be made, should all be considered as belonging to the present invention's
Protection domain.
Claims (9)
- A kind of 1. multi-colored led chip based on SiC, it is characterised in that including：Blue chip structure (10), the embedded blue light Red light chips structure (20), green light chip structure (30) in chip structure (10), yellow light chip structure (40), wherein, it is described Red light chips structure (20), the green light chip structure (30), the bottom of the yellow light chip structure (40) are respectively positioned on the indigo plant In the cushion (101) of optical chip structure (10).
- 2. the multi-colored led chip according to claim 1 based on SiC, it is characterised in that the blue chip structure (10) Including be cascading SiC substrate (11), blue light GaN cushions (101), blue light GaN stabilized zones (102), blue light N-shaped GaN layer (103), blue light active layer (104), blue light p-type AlGaN barrier layers (105), blue light p-type GaN layer (106).
- 3. the multi-colored led chip according to claim 1 based on SiC, it is characterised in that the blue chip structure (10), used between the red light chips structure (20), the green light chip structure (30), the yellow light chip structure (40) SiO2Material is as separation layer.
- 4. the multi-colored led chip according to claim 1 based on SiC, it is characterised in that the blue chip structure (10), the red light chips structure (20), the green light chip structure (30), the section of the yellow light chip structure (40) are Rectangle.
- 5. the multi-colored led chip according to claim 4 based on SiC, it is characterised in that the blue chip structure (10), the red light chips structure (20), the green light chip structure (30), the yellow light chip structure (40) successively it is adjacent into Linear array.
- 6. the multi-colored led chip according to claim 4 based on SiC, it is characterised in that the blue chip structure (10), the red light chips structure (20), the green light chip structure (30), the section of the yellow light chip structure (40) are in just Square arrangement.
- 7. the multi-colored led chip according to claim 4 based on SiC, it is characterised in that the length and width of the rectangle are big In 50 microns, less than 300 microns.
- 8. the multi-colored led chip according to claim 4 based on SiC, it is characterised in that the length and width of the rectangle are impartial In 100 microns.
- 9. the multi-colored led chip according to claim 1 based on SiC, it is characterised in that further include top electrode (51) and under Electrode (52).
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