CN107907103B - Surface acoustic wave double-shaft inclination angle sensing structure - Google Patents
Surface acoustic wave double-shaft inclination angle sensing structure Download PDFInfo
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- CN107907103B CN107907103B CN201711346349.0A CN201711346349A CN107907103B CN 107907103 B CN107907103 B CN 107907103B CN 201711346349 A CN201711346349 A CN 201711346349A CN 107907103 B CN107907103 B CN 107907103B
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- G01C9/00—Measuring inclination, e.g. by clinometers, by levels
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Abstract
A surface acoustic wave double-shaft inclination angle sensing structure belongs to the technical field of micro-electromechanical sensing. The method comprises the steps of manufacturing a plurality of surface acoustic wave resonator groups on the back of a silicon single crystal substrate, manufacturing input/output electrode pairs opposite to the surface acoustic wave resonators on the front of the silicon single crystal substrate, manufacturing double-end fixed support suspension electrodes above the input/output electrode pair arrays, respectively contacting one output electrode in the corresponding input/output electrode pair arrays or contacting gaps between the corresponding input/output electrode pairs, communicating or not communicating the corresponding surface acoustic wave resonators and output signal electrodes, outputting or not outputting resonance signals of corresponding resonance frequencies, and obtaining the plane state and horizontal state biaxial inclination angle of the surface acoustic wave biaxial inclination angle sensing structure substrate.
Description
Technical Field
The invention belongs to the technical field of micro-electromechanical sensing, relates to a sensor structure, and particularly relates to a double-shaft inclination angle sensing structure and method based on a surface acoustic wave resonator.
Background
The inclination measurement mainly measures the inclination of a measured object relative to the horizontal position of the measured object, a double-shaft inclination sensing device or instrument measures the inclination of two axial directions of a plane where the sensed object is located, wherein the two axial directions are perpendicular to the horizontal plane, the double-shaft inclination sensing device or instrument is used for monitoring and controlling the attitude of the sensed object, and the micro-inclination measurement is widely applied to the fields of precision instrument leveling, aerospace and ship navigation attitude control, satellite communication, radar equipment orientation and the like.
The tilt sensor in the prior art is based on the principle of newton's law gravity, for example, in patent 2008100377.X, with the help of an electrolyte, when the tilt of a plane to be detected changes, the electrolyte maintains a horizontal state due to the action of gravity, so that electrical parameters (resistance) of the electrolyte change, and accordingly, the change of the tilt of the object to be detected is detected. The disadvantages are small measuring range, low sensitivity and large sensor size.
There are optical principles, such as patent 200780000628.X, which uses a photo detector to receive and sense the reflected light from a light source incident on a measured object, the output electrical signal of the photo detector changes with the angular deviation of the reflected light relative to the incident light, thereby detecting the change of the tilt angle of the object, and patent 201110188720.1 detects the magnitude and direction of the tilt angle of the measured object according to the corresponding relationship between the change of the central wavelength of two fiber bragg gratings and the tilt angle. The defects are that the optical sensing system is complex in structure, and the measurement precision is difficult to meet the measurement requirement when the measurement range is large.
The Micro Electro Mechanical System (MEMS) sensor has very high sensitivity to the change of physical quantity, and has also been applied to the measurement of the tilt angle of an object, for example, the MEMS accelerometer is used to measure the component of the gravitational acceleration on two axes of the accelerometer, and determine the tilt angle of the plane where the accelerometer is located, patent 201610068956.4 discloses that the two-axis gravitational acceleration sensor is fixed on the side surface of the tilt cylinder to be measured, the maximum tilt angle between the tilt cylinder to be measured and the x-axis and the y-axis is obtained by moving along the side surface of the tilt cylinder to be measured, and the offset angle when the measuring platform of the two-axis gravitational acceleration sensor is wedged with the tilt cylinder is calculated to find the tilt angle between the tilt cylinder to be measured and the z-axis, and patent CN 103528567 a combines the principle of gravity, and uses two micro. The disadvantage is that the sensing output signal is much analog, which is not convenient for further signal collection and processing by using a digital system.
Disclosure of Invention
In order to overcome the defects in the prior art, the invention provides a surface acoustic wave biaxial inclination angle sensing structure based on biaxial inclination angle sensing of a surface acoustic wave resonator and a micro-electro-mechanical system double-end clamped beam.
The surface acoustic wave resonator comprises a substrate, wherein four surface acoustic wave resonator groups and four piezoelectric film areas respectively covered on the four surface acoustic wave resonator groups are arranged on the back surface of the substrate, four input/output electrode groups, four double-end fixedly-supported suspension electrodes, four input signal electrodes, four output signal electrodes and a plurality of grounding electrodes are arranged on the front surface of the substrate, and four input/output metal through hole groups and a plurality of grounding metal through holes penetrating through the substrate are arranged on the substrate;
the four surface acoustic wave resonator groups are respectively a first surface acoustic wave resonator group, a second surface acoustic wave resonator group, a third surface acoustic wave resonator group and a fourth surface acoustic wave resonator group, the first surface acoustic wave resonator group and the second surface acoustic wave resonator group are oppositely arranged at the front part and the rear part of the substrate, and the third surface acoustic wave resonator group and the fourth surface acoustic wave resonator group are oppositely arranged at the left part and the right part of the substrate; the first and third surface acoustic wave resonator groups respectively comprise N surface acoustic wave resonators arranged transversely in parallel, and the second and fourth surface acoustic wave resonator groups respectively comprise N-1 surface acoustic wave resonators arranged transversely in parallel; n is an odd number;
the four input/output electrode groups are respectively a first input/output electrode group, a second input/output electrode group, a third input/output electrode group and a fourth input/output electrode group, the first input/output electrode group, the second input/output electrode group, the third input/output electrode group and the fourth input/output electrode group are respectively arranged on the front surface of the substrate and are in one-to-one correspondence with the first surface acoustic wave resonator group, the second surface acoustic wave resonator group, the third surface acoustic wave resonator group and the fourth surface acoustic wave resonator group, the first input/output electrode group, the second input/output electrode group, the third input/output electrode group and the fourth input/output electrode group respectively comprise input/output electrode pairs with the same;
the four input signal electrodes are respectively a first input signal electrode, a second input signal electrode, a third input signal electrode and a fourth input signal electrode; the four output signal electrodes are respectively a first output signal electrode, a second output signal electrode, a third output signal electrode and a fourth output signal electrode; the input electrodes of the first, second, third and fourth input/output electrode groups are respectively collected to the first, second, third and fourth input signal electrodes;
the four double-end fixedly-supported suspension electrodes are respectively a first double-end fixedly-supported suspension electrode, a second double-end fixedly-supported suspension electrode, a third double-end fixedly-supported suspension electrode and a fourth double-end fixedly-supported suspension electrode, two ends of the first double-end fixedly-supported suspension electrode, two ends of the second double-end fixedly-supported suspension electrode, two ends of the third double-end fixedly-supported suspension electrode and two ends of the fourth double-end fixedly-supported suspension electrode are respectively fixed on the substrate through fixed supports, output electrodes of all input/output electrode pairs are respectively used as bottom electrodes of all double-end fixedly-supported suspension electrodes, and one of the fixed supports at two ends of the first double-end fixedly-supported; each double-end fixed support suspension electrode respectively spans above each input/output electrode pair array, the double-end fixed support suspension electrode naturally sags, and the position of a sagging point of the double-end fixed support suspension electrode is determined according to the inclination angle of the substrate;
the input/output metal through hole groups are respectively arranged on the input/output electrode groups, each input/output metal through hole group comprises input/output metal through hole pairs with the same number as the input/output electrode pairs in the corresponding input/output electrode group, each input/output metal through hole pair respectively comprises an input metal hole and an output metal hole, one end of each input metal through hole is connected with the input electrode corresponding to the front surface of the substrate, the other end of each input metal through hole is connected with the input signal bus electrode of the surface acoustic wave resonator corresponding to the back surface of the substrate, one end of each output metal through hole is connected with the output electrode corresponding to the front surface of the substrate, and the other end of each output metal through hole is connected with the output signal bus electrode of the surface acoustic wave resonator corresponding;
the grounding electrode is divided into two parts, the grounding electrode is respectively opposite to the short circuit bus electrodes at two ends of each surface acoustic wave resonator on the back surface of the substrate, one end of each grounding metal through hole is connected with the grounding electrode corresponding to the front surface of the substrate, and the other end of each grounding metal through hole is connected with the short circuit bus electrode of the surface acoustic wave resonator corresponding to the back surface of the substrate.
The invention makes multiple surface acoustic wave resonator groups on the back of the substrate, forms two groups of surface acoustic wave resonator arrays which are respectively arranged along the longitudinal front-back direction and the transverse left-right direction, makes input/output electrode pairs which are opposite to each surface acoustic wave resonator on the back of the substrate, forms two groups of input/output electrode arrays which are respectively arranged along the longitudinal front-back direction and the transverse left-right direction, each input/output electrode pair on the front of the substrate is opposite to each surface acoustic wave resonator corresponding to the back of the substrate in turn, makes a cross double-end fixed support suspension electrode above each input/output electrode pair array, the double-end fixed support suspension electrode naturally droops, the position of the drooping point is determined according to the inclination angle of the substrate, and is respectively contacted with one output electrode in the cross input/output electrode group or contacted with one output electrode gap in the cross input/, and according to the combined characteristics of the resonant frequency values of the resonant signals output by the four output signal electrodes, the resonant frequency value of the output resonant signal, the position of the surface acoustic wave resonator corresponding to the resonant frequency in the surface acoustic wave resonator group, namely the relationship between the position of the output electrode contacted with the droop point of the corresponding double-end fixedly-supported suspension electrode and the inclination angle of the surface acoustic wave biaxial inclination angle sensing structure substrate in two directions, the biaxial inclination angle of the plane of the surface acoustic wave biaxial inclination angle sensing structure substrate and the horizontal plane can be obtained.
The invention can sense the biaxial inclination angle of the plane of the sensed object relative to the horizontal plane in real time and on line, the sensing quantity is a quasi-digital frequency value, the digitization is easy, the measurement result can be further collected, processed and transmitted by a digital system, and the surface acoustic wave biaxial inclination angle sensing structure manufactured based on the silicon single crystal substrate is convenient to realize the on-chip integration with a peripheral signal processing circuit, and has small volume and light weight.
Gaps are arranged among the surface acoustic wave resonators, and the gap is the width of one surface acoustic wave resonator; the gap between each input/output electrode pair is the width of one input/output electrode pair, the width of each input/output electrode pair is the same and is the same as the width of the surface acoustic wave resonator on the back surface of the substrate, and therefore, each input metal through hole can be aligned and connected with the corresponding input electrode and the input signal bus electrode, and each output metal through hole can be aligned and connected with the corresponding output electrode and the output signal bus electrode.
Each input/output electrode pair in the second input/output electrode group is sequentially opposite to the gap of each input/output electrode pair in the first input/output electrode group, and each input/output electrode pair in the fourth input/output electrode group is sequentially opposite to the gap of each input/output electrode pair in the third input/output electrode group; when the vertical point of the double-ended clamped suspension electrode moves on the corresponding input/output electrode group due to the inclination of the substrate, if the vertical point of the first (or third) double-ended clamped suspension electrode falls at the gap of one input/output electrode pair, the vertical point of the second (or fourth) double-ended clamped suspension electrode corresponding to the first (or third) double-ended clamped suspension electrode just falls on the output electrode in one input/output electrode pair opposite to the gap, and vice versa, so that the seamless contact between the vertical point of each double-ended clamped suspension electrode and each input/output electrode pair can be realized, and the continuity of the whole sensing process is ensured.
The resonant frequency of each surface acoustic wave resonator is sequentially increased or decreased from left to right according to the sequence of a first surface acoustic wave resonator of the first surface acoustic wave resonator group, a first surface acoustic wave resonator of the second surface acoustic wave resonator group, a second surface acoustic wave resonator of the first surface acoustic wave resonator group, a second surface acoustic wave resonator … of the second surface acoustic wave resonator group and an N-1 surface acoustic wave resonator of the first surface acoustic wave resonator group;
the resonant frequency of each surface acoustic wave resonator is sequentially increased or decreased from front to back according to the sequence of the first surface acoustic wave resonator of the third surface acoustic wave resonator group, the first surface acoustic wave resonator of the fourth surface acoustic wave resonator group, the second surface acoustic wave resonator of the third surface acoustic wave resonator group, the second surface acoustic wave resonator … of the fourth surface acoustic wave resonator group, the N-1 surface acoustic wave resonator of the third surface acoustic wave resonator group, the N-1 surface acoustic wave resonator of the fourth surface acoustic wave resonator group and the N surface acoustic wave resonator of the third surface acoustic wave resonator group.
The surface acoustic wave resonator comprises an interdigital transducer and two short circuit reflection arrays which are respectively positioned on two sides of the interdigital transducer, wherein the interdigital transducer comprises two groups of interdigital electrodes which are oppositely staggered, input signal bus electrodes and output signal bus electrodes which are arranged at two ends of the interdigital electrodes, the short circuit reflection arrays comprise one group of short circuit finger electrodes and two short circuit bus electrodes which are arranged at two ends of the short circuit finger electrodes, the width of each surface acoustic wave resonator is the same, and the width of the surface acoustic wave resonator is the sum of the aperture of the interdigital electrode of the surface acoustic wave resonator and the widths of the input signal bus electrodes and the output signal bus electrodes which are arranged at two ends of the surface acoustic wave resonator or the sum of the aperture of the short circuit finger electrode of the surface acoustic wave resonator and the widths. Because the interdigital electrodes or the short circuit interdigital electrodes of the surface acoustic wave resonators with different resonant frequencies are different in aperture, the widths of the input signal bus electrode and the output signal bus electrode or the two short circuit bus electrodes at the two ends of the surface acoustic wave resonators are correspondingly set to enable the widths of the surface acoustic wave resonators to be the same.
The substrate is made of monocrystalline silicon or quartz, the piezoelectric film area is made of zinc oxide or aluminum nitride, interdigital electrodes, input signal bus electrodes, output signal bus electrodes, short circuit electrodes of a short circuit reflection array, short circuit bus electrodes, input electrodes, output electrodes, input signal electrodes, output signal electrodes, grounding electrodes and inner walls of metal through holes of the interdigital transducers are of gold or copper or aluminum-copper alloy film structures, the double-end fixedly-supported suspension electrode is of a soft gold thick film structure, and a fixedly-supported base is of a gold or copper thick film structure.
Drawings
FIG. 1 is a schematic view of a substrate backside structure of the present invention;
FIG. 2 is a schematic view of the front side of the substrate of the present invention;
FIG. 3 is a partial structural view of a double-ended clamped suspension electrode region of the present invention;
fig. 4 is a schematic diagram of the substrate back surface acoustic wave resonator structure of the present invention and the positional relationship between the substrate front surface acoustic wave resonator structure and the input/output electrode pairs, the input signal electrodes, the ground electrodes, and the input/output metal via pairs and the ground metal vias.
Detailed Description
As shown in fig. 1, 2, 3 and 4, the surface acoustic wave biaxial inclination angle sensing structure comprises a substrate 1, four surface acoustic wave resonator groups 2-1, 2-2, 2-3 and 2-4 manufactured on the back surface of the substrate 1 respectively cover four piezoelectric film regions 3 on the four surface acoustic wave resonator groups, four input/output electrode groups 4-1, 4-2, 4-3 and 4-4 manufactured on the front surface of the substrate 1, and four double-end clamped suspension electrodes 8-1 and 8-2, 8-3, 8-4, four input signal electrodes 51, 52, 53, 54, four output signal electrodes 61, 62, 63, 64, a plurality of grounding electrodes 7, four input/output metal through hole groups and a plurality of grounding metal through holes 10 which are manufactured on the substrate 1 and penetrate through the substrate 1;
in the four surface acoustic wave resonator groups 2-1, 2-2, 2-3 and 2-4, a first surface acoustic wave resonator group 2-1 and a second surface acoustic wave resonator group 2-2 are arranged in front and back of the back of a substrate 1, the first surface acoustic wave resonator group 2-1 on the front side comprises N surface acoustic wave resonators 21 which are transversely arranged in parallel, the second surface acoustic wave resonator group 2-2 on the back side comprises N-1 surface acoustic wave resonators 21 which are transversely arranged in parallel, the gap between every two surface acoustic wave resonators 21 is the width of one surface acoustic wave resonator 21, every surface acoustic wave resonator 21 in the second surface acoustic wave resonator group 2-2 is opposite to the gap between every two surface acoustic wave resonators 21 in the first surface acoustic wave resonator group 2-1 in sequence, and N is an odd number;
in the four surface acoustic wave resonator groups 2-1, 2-2, 2-3 and 2-4, a third surface acoustic wave resonator group 2-3 and a fourth surface acoustic wave resonator group 2-4 are arranged on the left and right of the back surface of a substrate 1, the third surface acoustic wave resonator group 2-3 on the left side comprises N surface acoustic wave resonators 21 which are longitudinally arranged in parallel, the fourth surface acoustic wave resonator group 2-4 on the right side comprises N-1 surface acoustic wave resonators 21 which are longitudinally arranged in parallel, the gap between every two surface acoustic wave resonators 21 is the width of one surface acoustic wave resonator 21, every one surface acoustic wave resonator 21 in the fourth surface acoustic wave resonator group 2-4 is opposite to the gap between every two surface acoustic wave resonators 21 in the third surface acoustic wave resonator group 2-3 in sequence, and N is an odd number;
the resonant frequencies of the surface acoustic wave resonators in the first surface acoustic wave resonator group 2-1 and the second surface acoustic wave resonator group 2-2 are different, the resonant frequencies of the surface acoustic wave resonators are sequentially increased or sequentially decreased from left to right according to the sequence of a first surface acoustic wave resonator in the first surface acoustic wave resonator group 2-1, a first surface acoustic wave resonator in the second surface acoustic wave resonator group 2-2, a second surface acoustic wave resonator in the first surface acoustic wave resonator group 2-1, …, an N-1 surface acoustic wave resonator in the first surface acoustic wave resonator group 2-1, an N-1 surface acoustic wave resonator in the second surface acoustic wave resonator group 2-2 and an N-1 surface acoustic wave resonator in the first surface acoustic wave resonator group 2-1, n is an odd number;
the resonant frequencies of all the surface acoustic wave resonators in the third surface acoustic wave resonator group 2-3 and the fourth surface acoustic wave resonator group 2-4 are different, the resonant frequencies of all the surface acoustic wave resonators are sequentially increased or sequentially decreased from front to back according to the sequence of a first surface acoustic wave resonator in the third surface acoustic wave resonator group 2-3, a first surface acoustic wave resonator in the fourth surface acoustic wave resonator group 2-4, a second surface acoustic wave resonator in the third surface acoustic wave resonator group 2-3, …, an N-1 surface acoustic wave resonator in the third surface acoustic wave resonator group 2-3, an N-1 surface acoustic wave resonator in the fourth surface acoustic wave resonator group 2-4 and an N surface acoustic wave resonator in the third surface acoustic wave resonator group 2-3, n is an odd number;
the surface acoustic wave resonator 21 comprises an interdigital transducer 22 and two short circuit reflection arrays 23 respectively positioned at two sides of the interdigital transducer, the interdigital transducer 22 comprises two groups of interdigital electrodes 221 which are oppositely staggered, input signal bus electrodes 222 and output signal bus electrodes 223 at two ends of the interdigital electrodes, the short circuit reflection arrays 23 comprise one group of short circuit finger electrodes 231 and two short circuit bus electrodes 232 at two ends of the short circuit finger electrodes, the width of each surface acoustic wave resonator is the same, the width of the surface acoustic wave resonator is the sum of the aperture of the interdigital electrode 221 of the surface acoustic wave resonator and the widths of the input signal bus electrodes 222 and the output signal bus electrodes 223 at two ends of the interdigital electrode or the aperture of the short circuit finger electrode 231 of the surface acoustic wave resonator and the widths of the two short circuit bus electrodes 232 at two ends of the interdigital electrode 221 or the short circuit finger electrode 231 of the surface acoustic wave resonator with, the widths of the input signal bus electrode 222 and the output signal bus electrode 223 or the two short-circuit bus electrodes 232 at the two ends thereof are set correspondingly so that the widths of the respective surface acoustic wave resonators are the same;
of the four input/output electrode groups 4-1, 4-2, 4-3, 4-4, the first input/output electrode group 4-1 and the second input/output electrode group 4-2 are disposed in front of and behind the front surface of the substrate 1 and face the first surface acoustic wave resonator group 2-1 and the second surface acoustic wave resonator group 2-2 on the back surface of the substrate 1, the third input/output electrode group 4-3 and the fourth input/output electrode group 4-4 are disposed in the left and right of the front surface of the substrate 1 and face the third surface acoustic wave resonator group 2-3 and the fourth surface acoustic wave resonator group 2-4 on the back surface of the substrate 1, each of the input/output electrode groups includes the same number of input/output electrode pairs 41 as the number of the surface acoustic wave resonators 21 in the corresponding surface acoustic wave resonator group, each input/output electrode pair 41 is opposed to the corresponding respective surface acoustic wave resonators 21 in turn, the gap between each input/output electrode pair 41 is the width of one input/output electrode pair 41, the width of each input/output electrode pair 41 is the same and coincides with the width of the surface acoustic wave resonator 21 on the back surface of the substrate 1, each input/output electrode pair 41 in the second input/output electrode group 4-2 is sequentially opposed to the gap of each input/output electrode pair 41 in the first input/output electrode group 4-1, each input/output electrode pair 41 in the fourth input/output electrode group 4-4 is in turn over against the gap of each input/output electrode pair 41 in the third input/output electrode group 4-3;
the input/output electrode pair 41 includes an input electrode 411 and an output electrode 412, each input electrode 411 respectively faces the input signal bus electrode 222 of each corresponding surface acoustic wave resonator on the back surface of the substrate 1, each output electrode 412 respectively faces the output signal bus electrode 223 of each corresponding surface acoustic wave resonator 21 on the back surface of the substrate 1, each input electrode 411 of the first input/output electrode group 4-1, the second input/output electrode group 4-2, the third input/output electrode group 4-3 and the fourth input/output electrode group 4-4 respectively converges to the first input signal electrode 51, the second input signal electrode 52, the third input signal electrode 53 and the fourth input signal electrode 54, each input/output electrode group 4-1, 4-2, 2, 4-3, 4-4 simultaneously serve as the bottom electrode of the corresponding double clamped suspended electrode;
each of the two clamped suspension electrodes 8-1, 8-2, 8-3, 8-4 is fixed on the clamping base 81 at its two ends, wherein the first, second, third and fourth clamped suspension electrodes 8-1, 8-2, 8-3, 8-4 cross over each output electrode 412 of the first, second, third and fourth input/output electrode sets 4-1, 4-2, 4-3, 4-4 as their bottom electrodes, respectively, and one of the two clamping bases 81 of the first, second, third and fourth clamped suspension electrodes 8-1, 8-2, 8-3, 8-4 is connected with the first output signal The signal electrode 61, the second output signal electrode 62, the third output signal electrode 63 and the fourth output signal electrode 64 are connected;
each input/output metal via group 9 is formed on a corresponding input/output electrode group, each input/output metal via group 9 includes the same number of input/output metal via pairs 91 as the input/output electrode pairs in the corresponding input/output electrode group, each input/output metal via pair 91 includes one input metal via 911 and one output metal via 912, one end of the input metal through hole 911 is connected with the input electrode 411 corresponding to the front surface of the substrate 1, the other end of the input metal through hole is connected with the input signal bus electrode 222 of the interdigital transducer 22 of the surface acoustic wave resonator 21 corresponding to the back surface of the substrate 1, one end of the output metal through hole 912 is connected with the output electrode 412 corresponding to the front surface of the substrate 1, and the other end of the output metal through hole is connected with the output signal bus electrode 223 of the interdigital transducer 22 of the surface acoustic wave resonator 21 corresponding to the back surface;
the grounding electrode 7 is opposite to the short-circuit bus electrode 232 of each SAW resonator short-circuit reflection array 23 on the back surface of the substrate 1, one end of each grounding metal through hole 10 is connected with the grounding electrode 7 corresponding to the front surface of the substrate 1, and the other end is connected with the short-circuit bus electrode 232 of the SAW resonator short-circuit reflection array 23 corresponding to the back surface of the substrate 1.
The surface acoustic wave resonator is of a single-end pair resonance structure or a double-end pair resonance structure;
the material of the substrate is monocrystalline silicon or quartz, the material of the piezoelectric thin film region 3 is zinc oxide or aluminum nitride, the interdigital electrode 221, the input signal bus electrode 222, the output signal bus electrode 223, the short circuit electrode 231, the short circuit bus electrode 232, the input electrode 411, the output electrode 412, the input signal electrode 51, the output signal electrode 62, the grounding electrode 7 and the inner wall of the metal through hole of the interdigital transducer 22 are gold or copper or aluminum-copper alloy thin film structures, the double-end fixed-support suspension electrode is a soft gold thick film structure, and the fixed-support base is a gold or copper thick film structure.
The working principle of the surface acoustic wave double-shaft inclination angle sensing structure is as follows:
the substrate 1 and the surface acoustic wave biaxial inclination angle sensing structure manufactured on the substrate form a surface acoustic wave biaxial inclination angle sensing chip;
the first input signal electrode 51, the second input signal electrode 52, the third input signal electrode 53 and the fourth input signal electrode 54 on the chip respectively form four input ports with the corresponding grounding electrodes 7, the first output signal electrode 61, the second output signal electrode 62, the third output signal electrode 63 and the fourth output signal electrode 64 on the chip respectively form four output ports with the corresponding grounding electrodes 7, and each group of the input ports and the output ports are externally connected with a network analyzer or a frequency meter and used for detecting resonance signals output by each surface acoustic wave resonator and the frequency thereof;
if the plane of the surface acoustic wave double-shaft inclination angle sensing chip is in a horizontal state, each double-end fixedly supported suspension electrode naturally sags, the sagging point of the double-end fixedly supported suspension electrode is the middle point of the suspension electrode, the sagging points of the first double-end fixedly supported suspension electrode 8-1 and the third double-end fixedly supported suspension electrode 8-3 are just contacted with the output electrode 412 centered in the first input/output electrode group 4-1 and the third input/output electrode group 4-3 which are used as the bottom electrodes below the first double-end fixedly supported suspension electrode respectively, the corresponding surface acoustic wave resonator 21 is communicated with the output signal electrodes 61 and 63 to output the resonance signal of the corresponding resonance frequency value, the sagging points of the second double-end fixedly supported suspension electrode 8-2 and the fourth double-end fixedly supported suspension electrode 8-4 are just contacted with the output electrode gap centered in the second input/output electrode group 4-2 and the fourth input/output electrode group 4-4 below, the corresponding surface acoustic wave resonator 21 and the output signal electrodes 62 and 64 are not communicated, and no resonance signal is output;
if the surface acoustic wave biaxial inclination angle sensing chip is inclined to the left or to the right, the sagging points of the first double-end suspended solid support electrode 8-1 and the second double-end suspended solid support electrode 8-2 move to the left or to the right, corresponding to the inclination angle of the substrate: or the droop point of the first double-end fixed support suspension electrode 8-1 just contacts with the middle left or middle right output electrode 412 in the first input/output electrode group 4-1 as the bottom electrode thereof, so that the corresponding surface acoustic wave resonator 21 is communicated with the output signal electrode 61 to output the resonance signal of the corresponding resonance frequency value, the droop point of the second double-end fixed support suspension electrode 8-2 just contacts with the output electrode gap in the second input/output electrode group 4-2 just below the second double-end fixed support suspension electrode 412, the corresponding surface acoustic wave resonator 21 is not communicated with the output signal electrode 62, no resonance signal is output, or the droop point of the second double-end fixed support suspension electrode 8-2 just contacts with the middle left or middle right output electrode 412 in the second input/output electrode group 4-2 as the bottom electrode thereof, the corresponding surface acoustic wave resonator 21 is communicated with an output signal electrode 62 to output a resonance signal with a corresponding resonance frequency value, a droop point of a first double-end fixed support suspension electrode 8-1 is just contacted with an output electrode gap in a first input/output electrode group 4-1 which is just opposite to the output electrode 412 below the first double-end fixed support suspension electrode, the corresponding surface acoustic wave resonator 21 is not communicated with the output signal electrode 61, no resonance signal is output, meanwhile, the droop point of a third double-end fixed support suspension electrode 8-3 is kept contacted with an output electrode 412 which is centered in a third input/output electrode group 4-3 which is taken as a bottom electrode below the third double-end fixed support suspension electrode, the corresponding surface acoustic wave resonator 21 is communicated with an output signal electrode 63 to output the resonance signal with the corresponding resonance frequency value, and the droop point of a fourth double-end fixed support suspension electrode 8-4 is kept contacted with an output electrode which is centered in a fourth input/output electrode group The gaps are in contact with each other, the corresponding surface acoustic wave resonator 21 and the corresponding output signal electrode 64 are not communicated, and no resonance signal is output;
if the surface acoustic wave biaxial inclination angle sensing chip plane is inclined forwards or backwards, the droop points of the third double-end fixedly supported suspension electrode 8-3 and the fourth double-end fixedly supported suspension electrode 8-4 move forwards or backwards corresponding to the inclination angle of the substrate: or the droop point of the third double-ended fixed-support suspended electrode 8-3 is just contacted with the front or back middle output electrode 412 in each output electrode 412 as the bottom electrode in the third input/output electrode group 4-3 below the third double-ended fixed-support suspended electrode to make the corresponding surface acoustic wave resonator 21 communicated with the output signal electrode 63 and output the resonance signal with the corresponding resonance frequency value, the droop point of the fourth double-ended fixed-support suspended electrode 8-4 is just contacted with the gap of one output electrode in the fourth input/output electrode group 4-4 below the fourth double-ended fixed-support suspended electrode and is not communicated with the corresponding output signal electrode 64, no resonance signal is output, or the droop point of the fourth double-ended fixed-support suspended electrode 8-4 is just contacted with the front or back middle output electrode 412 in each output electrode group 4-4 below the fourth input/output electrode group 4-4 as the bottom electrode And the droop point of the third double-ended fixedly-supported suspended electrode 8-3 is just contacted with an output electrode gap in the third input/output electrode group 4-3 below the droop point of the third double-ended fixedly-supported suspended electrode 8-3, which is just opposite to the output electrode 412, and the corresponding surface acoustic wave resonator 21 is not communicated with the output signal electrode 63, so that no resonance signal is output, meanwhile, the droop point of the first double-ended fixedly-supported suspended electrode 8-1 is kept contacted with the output electrode 412 in the middle in the first input/output electrode group 4-1 below the first double-ended fixedly-supported suspended electrode 8-1, which is taken as the bottom electrode, so that the corresponding surface acoustic wave resonator 21 is communicated with the output signal electrode 61, so that the resonance signal of the corresponding resonance frequency value is output, and the droop point of the second double-ended fixedly-supported suspended electrode 8-2 is kept contacted with the second input/output electrode group 4 below the second double-ended 2, the central output electrode gap is contacted, the corresponding surface acoustic wave resonator 21 and the output signal electrode 62 are not communicated, and no resonance signal is output;
that is, when the plane of the surface acoustic wave biaxial inclination angle sensing chip is in a horizontal state, the first output signal electrode 61 and the third output signal electrode 63 output resonance signals which are just the resonance frequency values of the surface acoustic wave resonators 21 centered in the corresponding surface acoustic wave resonator group, respectively, and the second output signal electrode 62 and the fourth output signal electrode 64 do not output resonance signals;
that is, when the plane of the surface acoustic wave biaxial inclination angle sensing chip is tilted left or right, one of the first output signal electrode 61 and the second output signal electrode 62 outputs the resonance signal of the resonance frequency value of the surface acoustic wave resonator 21 that is tilted left or right in the corresponding surface acoustic wave resonator group, the other outputs no resonance signal, while the third output signal electrode 63 outputs the resonance signal that is exactly the resonance frequency value of the surface acoustic wave resonator 21 that is centered in the corresponding surface acoustic wave resonator group, and the fourth output signal electrode 64 outputs no resonance signal;
that is, when the plane where the biaxial inclination sensing chip of surface acoustic wave is located tilts forward or backward, one of the third output signal electrode 63 and the fourth output signal electrode 64 outputs the resonance signal of the resonance frequency value of the front or back surface acoustic wave resonator 21 in the corresponding surface acoustic wave resonator group, and the other outputs no resonance signal, while the first output signal electrode 61 outputs the resonance signal of the resonance frequency value of the surface acoustic wave resonator 21 centered in the corresponding surface acoustic wave resonator group, and the second output signal electrode 62 outputs no resonance signal;
therefore, the resonant frequency values of the resonant signals output by the four output signal electrodes are measured simultaneously, the combination characteristics of the resonant frequency values of the four output resonant signals are analyzed, and the biaxial inclination angle of the surface acoustic wave biaxial inclination angle sensing structure substrate relative to the horizontal plane can be obtained according to the resonant frequency values of the output resonant signals and the relation between the position of the surface acoustic wave resonator corresponding to the resonant frequency in the surface acoustic wave resonator group, namely the position of the output electrode contacted with the droop point of the corresponding double-end fixedly-supported suspension electrode and the inclination angle of the surface acoustic wave biaxial inclination angle sensing structure substrate in two mutually vertical axial directions.
When the high-frequency oscillation circuit is used, the high-frequency oscillation circuit can be formed by externally connecting a feedback amplification circuit and a phase-shifting network through an input port formed by the input signal electrode and the corresponding grounding electrode and an output port formed by the input signal electrode and the corresponding grounding electrode, the high-frequency oscillation circuit generates a high-frequency oscillation signal with the frequency consistent with the resonant frequency of the corresponding surface acoustic wave resonator, and a network analyzer or a frequency instrument is used for detecting the high-frequency oscillation signal and the frequency thereof to replace directly detecting the output resonant signal and the frequency thereof, so that the detection sensitivity and the operability are improved.
Typical implementation steps of the surface acoustic wave biaxial inclination angle sensing structure are as follows:
(1) spin-coating a positive photoresist on the silicon single crystal substrate, and exposing and developing to remove the photoresist film where the silicon through hole to be manufactured is located;
(2) etching to form a silicon through hole;
(3) magnetron sputtering, wherein the inner wall of the through silicon via is covered with an aluminum-copper alloy film;
(4) removing the photoresist;
(5) polishing the two sides of the silicon single crystal substrate;
(6) spin-coating positive photoresist on the bottom surface of the silicon single crystal substrate, exposing and developing, and removing photoresist films at the positions of metal structures of 4 surface acoustic wave resonator groups including interdigital electrodes, input signal bus electrodes, output signal bus electrodes, short circuit finger electrodes and short circuit bus electrodes;
(7) covering an aluminum-copper alloy film by magnetron sputtering;
(8) removing the photoresist and the aluminum-copper alloy film covering the photoresist to obtain 4 metal structures of the surface acoustic wave resonator group, wherein the metal structures comprise interdigital electrodes, input signal bus electrodes, output signal bus electrodes, short circuit finger electrodes and short circuit bus electrodes;
(9) cleaning the silicon single crystal substrate;
(10) magnetron sputtering, wherein a zinc oxide film is covered on the metal structures of 4 surface acoustic wave resonator groups on the bottom surface of the substrate;
(11) spin-coating positive photoresist on the zinc oxide film, and removing the photoresist film on the non-piezoelectric film area by photoetching;
(12) wet etching to remove the zinc oxide film in the non-piezoelectric film area;
(13) removing the photoresist;
(14) spin-coating positive photoresist on the front surface of the substrate, and exposing and developing to remove 4 groups of input/output electrode groups, 4 input signal electrodes, 4 output signal electrodes and the photoresist film where the grounding electrode is located;
(15) covering an aluminum-copper alloy film by magnetron sputtering;
(16) removing the photoresist, and removing the aluminum-copper alloy film covered on the photoresist to obtain 4 groups of input/output electrode groups, 4 input signal electrodes, 4 output signal electrodes and a grounding electrode;
(17) spin-coating positive photoresist on the surface of the structural layer, and exposing and developing to remove photoresist films at positions of the fixed electrodes at two ends of the 4 double-end fixedly-supported suspended electrodes;
(18) covering a gold film by magnetron sputtering;
(19) removing the photoresist and the gold film covering the photoresist to obtain seed layers of the fixed electrodes at two ends of the 4 double-end fixedly-supported suspension electrodes;
(20) spin-coating positive photoresist on the surface of the structural layer, and removing photoresist films above seed layers of fixed electrodes at two ends of the 4 double-end fixed-support suspension electrodes by photoetching;
(21) electroplating a thick gold film;
(22) removing the photoresist to obtain 4 fixed electrodes at two ends of the double-end fixed suspension electrode;
(23) spin-coating positive photoresist on the surface of the structural layer, and removing photoresist films at positions where sacrificial layers below 4 double-end clamped suspension electrodes to be manufactured are located by photoetching;
(24) covering the silicon dioxide thick film by magnetron sputtering;
(25) removing the photoresist and the silicon dioxide film covering the photoresist to obtain 4 silicon dioxide sacrificial layers under the double-end clamped suspension electrode;
(26) spin-coating positive photoresist on the surface of the structural layer, and removing two fixed electrodes of the 4 double-end fixed-support suspension electrodes and the photoresist film above the silicon dioxide sacrificial layer by photoetching;
(27) covering a gold film by magnetron sputtering;
(28) removing the photoresist and the gold film covering the photoresist to obtain seed layers of 4 double-end clamped suspension electrodes;
(29) spin-coating positive photoresist on the surface of the structural layer, and removing the photoresist film above the seed layers of the 4 double-end clamped suspension electrodes by photoetching;
(30) electroplating a soft thick gold film;
(31) removing the photoresist;
(32) and removing the silicon dioxide sacrificial layer below the 4 double-end clamped suspension electrodes, and releasing the 4 double-end clamped suspension electrodes, thereby finishing the manufacture of the surface acoustic wave biaxial inclination angle sensing structure and obtaining the surface acoustic wave biaxial inclination angle sensing chip.
The specific implementation steps for realizing the double-shaft inclination angle sensing by adopting the surface acoustic wave double-shaft inclination angle sensing chip are as follows:
(1) calibrating chip level conditions
Measuring the resonant frequency of the resonant signals output by the first, second, third and fourth output signal electrodes respectively, and adjusting the chip to be properly inclined forwards or backwards or inclined leftwards or rightwards according to the measured value, so that the resonant frequency of the resonant signals output by the first output signal electrode and the third output signal electrode is just the resonant frequency of the surface acoustic wave resonator arranged in the middle of the first surface acoustic wave resonator group and the third surface acoustic wave resonator group respectively, the second output signal electrode and the fourth output signal electrode have no resonant signal output, and at the moment, the plane where the chip is located is in a horizontal state;
(2) calibrating the relationship between the chip inclination angle and the resonance frequency of the output resonance signal
① tilting the chip from horizontal state (0 deg.) to left, recording the resonant frequency value of the resonant signal output by the first or second output signal electrode and the corresponding tilt angle value until the resonant signal with the maximum (or minimum) resonant frequency value is output;
② tilting the chip from horizontal state (0 deg.) to right, recording the resonant frequency value of the resonant signal output from the first output signal electrode or the second output signal electrode and the corresponding tilt angle value until the resonant signal with the minimum (or maximum) resonant frequency value is output;
③ making the chip tilt forward from horizontal state (0 deg.), recording the resonant frequency value of the resonant signal output by the third output signal electrode or the fourth output signal electrode and the corresponding tilt angle value, until outputting the resonant signal with the maximum (or minimum) resonant frequency value;
④ tilting the chip backward from horizontal state (0 deg.), recording the resonant frequency value of the resonant signal output by the third output signal electrode or the fourth output signal electrode and the corresponding tilt angle value until the resonant signal with the minimum (or maximum) resonant frequency value is output;
⑤ making tilt angle calibration table from the measured tilt angle values of several groups of two mutually perpendicular axial directions and the corresponding resonant frequency value of the output resonant signal;
⑥ or fitting the measured values to obtain a function or curve for calibrating the inclination angle.
(3) Double-shaft inclination angle of measuring chip
For any state of the chip, measuring the resonance frequency of the resonance signal output by the first output signal electrode, the second output signal electrode, the third output signal electrode and the fourth output signal electrode respectively, and determining the biaxial inclination angle of the plane where the chip is located relative to the horizontal plane by referring to a chip inclination angle calibration table or a calibration function or a calibration curve, namely:
determining a tilt angle value of a plane where the chip is located, wherein the tilt angle value is forward or backward inclined according to a resonant frequency value of a resonant signal output by the first output signal electrode or the second output signal electrode, at the moment, the resonant frequency value of the resonant signal output by the third output signal electrode is just the resonant frequency of a surface acoustic wave resonator arranged in the middle of the third surface acoustic wave resonator group, and no resonant signal is output by the fourth output signal electrode;
or determining the inclination angle value of the left inclination or the right inclination of the plane of the chip according to the resonant frequency value of the resonant signal output by the third output signal electrode or the fourth output signal electrode, wherein the resonant frequency value of the resonant signal output by the first output signal electrode is just the resonant frequency of the surface acoustic wave resonator in the middle of the first surface acoustic wave resonator group, and the second output signal electrode does not output the resonant signal;
or determining the biaxial inclination angle of the plane of the chip simultaneously according to the resonance frequency of the resonance signals output by the first output signal electrode or the second output signal electrode and the third output signal electrode or the fourth output signal electrode.
It will be appreciated by those skilled in the art that while specific embodiments have been described herein for purposes of illustration, various modifications may be made without deviating from the spirit and scope of the invention. Accordingly, it is not intended that the invention be limited, except as by the appended claims.
Claims (5)
1. A surface acoustic wave double-shaft inclination angle sensing structure is characterized by comprising a substrate, wherein four surface acoustic wave resonator groups and four piezoelectric film areas respectively covering the four surface acoustic wave resonator groups are arranged on the back surface of the substrate, four input/output electrode groups, four double-end fixedly-supported suspension electrodes, four input signal electrodes, four output signal electrodes and a plurality of grounding electrodes are arranged on the front surface of the substrate, and four input/output metal through hole groups and a plurality of grounding metal through holes penetrating through the substrate are arranged on the substrate;
the four surface acoustic wave resonator groups are respectively a first surface acoustic wave resonator group, a second surface acoustic wave resonator group, a third surface acoustic wave resonator group and a fourth surface acoustic wave resonator group, the first surface acoustic wave resonator group and the second surface acoustic wave resonator group are oppositely arranged at the front part and the rear part of the substrate, and the third surface acoustic wave resonator group and the fourth surface acoustic wave resonator group are oppositely arranged at the left part and the right part of the substrate; the first and third surface acoustic wave resonator groups respectively comprise N surface acoustic wave resonators arranged transversely in parallel, and the second and fourth surface acoustic wave resonator groups respectively comprise N-1 surface acoustic wave resonators arranged transversely in parallel; n is an odd number;
the resonant frequency of each surface acoustic wave resonator is sequentially increased or decreased from left to right according to the sequence of a first surface acoustic wave resonator of the first surface acoustic wave resonator group, a first surface acoustic wave resonator of the second surface acoustic wave resonator group, a second surface acoustic wave resonator of the first surface acoustic wave resonator group, a second surface acoustic wave resonator of the second surface acoustic wave resonator group, a second surface acoustic wave resonator … of the second surface acoustic wave resonator group and an N-1 surface acoustic wave resonator of the first surface acoustic wave resonator group;
the resonant frequency of each surface acoustic wave resonator is sequentially increased or decreased from front to back according to the sequence of a first surface acoustic wave resonator of the third surface acoustic wave resonator group, a first surface acoustic wave resonator of the fourth surface acoustic wave resonator group, a second surface acoustic wave resonator of the third surface acoustic wave resonator group, a second surface acoustic wave resonator … of the fourth surface acoustic wave resonator group, an N-1 surface acoustic wave resonator of the third surface acoustic wave resonator group, an N-1 surface acoustic wave resonator of the fourth surface acoustic wave resonator group and an N surface acoustic wave resonator of the third surface acoustic wave resonator group;
the four input/output electrode groups are respectively a first input/output electrode group, a second input/output electrode group, a third input/output electrode group and a fourth input/output electrode group, the first input/output electrode group, the second input/output electrode group, the third input/output electrode group and the fourth input/output electrode group are respectively arranged on the front surface of the substrate and are in one-to-one correspondence with the first surface acoustic wave resonator group, the second surface acoustic wave resonator group, the third surface acoustic wave resonator group and the fourth surface acoustic wave resonator group, the first input/output electrode group, the second input/output electrode group, the third input/output electrode group and the fourth input/output electrode group respectively comprise input/output electrode pairs with the same;
the four input signal electrodes are respectively a first input signal electrode, a second input signal electrode, a third input signal electrode and a fourth input signal electrode; the four output signal electrodes are respectively a first output signal electrode, a second output signal electrode, a third output signal electrode and a fourth output signal electrode; the input electrodes of the first, second, third and fourth input/output electrode groups are respectively collected to the first, second, third and fourth input signal electrodes;
the four double-end fixedly-supported suspension electrodes are respectively a first double-end fixedly-supported suspension electrode, a second double-end fixedly-supported suspension electrode, a third double-end fixedly-supported suspension electrode and a fourth double-end fixedly-supported suspension electrode, two ends of the first double-end fixedly-supported suspension electrode, two ends of the second double-end fixedly-supported suspension electrode, two ends of the third double-end fixedly-supported suspension electrode and two ends of the fourth double-end fixedly-supported suspension electrode are respectively fixed on the substrate through fixed supports, output electrodes of all input/output electrode pairs are respectively used as bottom electrodes of all double-end fixedly-supported suspension electrodes, and one of the fixed supports at two ends of the first double-end fixedly-supported; each double-end fixed support suspension electrode respectively spans above each input/output electrode pair array, the double-end fixed support suspension electrode naturally sags, and the position of a sagging point of the double-end fixed support suspension electrode is determined according to the inclination angle of the substrate;
the input/output metal through hole groups are respectively arranged on the input/output electrode groups, each input/output metal through hole group comprises input/output metal through hole pairs with the same number as the input/output electrode pairs in the corresponding input/output electrode group, each input/output metal through hole pair respectively comprises an input metal hole and an output metal hole, one end of each input metal through hole is connected with the input electrode corresponding to the front surface of the substrate, the other end of each input metal through hole is connected with the input signal bus electrode of the surface acoustic wave resonator corresponding to the back surface of the substrate, one end of each output metal through hole is connected with the output electrode corresponding to the front surface of the substrate, and the other end of each output metal through hole is connected with the output signal bus electrode of the surface acoustic wave resonator corresponding;
the grounding electrode is divided into two parts, the grounding electrode is respectively opposite to the short circuit bus electrodes at two ends of each surface acoustic wave resonator on the back surface of the substrate, one end of each grounding metal through hole is connected with the grounding electrode corresponding to the front surface of the substrate, and the other end of each grounding metal through hole is connected with the short circuit bus electrode of the surface acoustic wave resonator corresponding to the back surface of the substrate.
2. A surface acoustic wave biaxial inclination angle sensing structure as defined in claim 1, wherein gaps are provided between surface acoustic wave resonators, the gaps being the width of one surface acoustic wave resonator; the gap between each input/output electrode pair is the width of one input/output electrode pair, and the widths of the input/output electrode pairs are the same and are consistent with the width of the surface acoustic wave resonator on the back surface of the substrate.
3. A surface acoustic wave dual-axis tilt sensing structure according to claim 1, wherein each input/output electrode pair in said second input/output electrode group is sequentially opposed to the gap of each input/output electrode pair in said first input/output electrode group, and each input/output electrode pair in said fourth input/output electrode group is sequentially opposed to the gap of each input/output electrode pair in said third input/output electrode group.
4. The surface acoustic wave dual-axis tilt angle sensing structure according to claim 1, wherein the surface acoustic wave resonator comprises an interdigital transducer and two short-circuit reflection arrays respectively located at two sides of the interdigital transducer, the interdigital transducer comprises two sets of interdigital electrodes staggered in opposite directions and input signal bus electrodes and output signal bus electrodes at two ends thereof, the short-circuit reflection array comprises a set of short-circuit interdigital electrodes and two short-circuit bus electrodes at two ends thereof, each surface acoustic wave resonator has the same width, the width of the surface acoustic wave resonator is the sum of the aperture of the interdigital electrode of the surface acoustic wave resonator and the widths of the input signal bus electrodes and the output signal bus electrodes at two ends thereof or the sum of the aperture of the short-circuit interdigital electrode of the surface acoustic wave resonator and the widths of the two short-circuit bus electrodes at two ends thereof, the aperture of the interdigital electrodes or the short-circuit finger electrodes of each surface acoustic wave resonator is different from each other, the widths of the input signal bus electrode and the output signal bus electrode or the two short-circuit bus electrodes at the two ends of the short-circuit bus electrode are correspondingly set to make the widths of the surface acoustic wave resonators the same.
5. The structure of claim 4, wherein the piezoelectric thin film region is made of zinc oxide or aluminum nitride, the interdigital electrodes, the input signal bus electrodes, the output signal bus electrodes, the short-circuit electrodes of the short-circuit reflection array, the short-circuit bus electrodes, the input electrodes, the output electrodes, the input signal electrodes, the output signal electrodes, the ground electrodes, and the inner walls of the metal through holes of the interdigital transducers are made of gold or copper or aluminum-copper alloy thin film structures, the double-end fixed suspension electrode is made of a soft gold thick film structure, and the fixed base thereof is made of gold or copper thick film structure.
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