CN107904462A - A kind of electronic device magnesium alloy and preparation method thereof - Google Patents
A kind of electronic device magnesium alloy and preparation method thereof Download PDFInfo
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- CN107904462A CN107904462A CN201711333574.0A CN201711333574A CN107904462A CN 107904462 A CN107904462 A CN 107904462A CN 201711333574 A CN201711333574 A CN 201711333574A CN 107904462 A CN107904462 A CN 107904462A
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C23/00—Alloys based on magnesium
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/02—Making non-ferrous alloys by melting
- C22C1/03—Making non-ferrous alloys by melting using master alloys
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/002—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working by rapid cooling or quenching; cooling agents used therefor
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/06—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of magnesium or alloys based thereon
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Abstract
The present invention provides a kind of electronic device magnesium alloy and preparation method thereof, including following component：4 7wt%Si, 1 4wt%Al, 0.1 0.5wt%Zr, 0.2 0.6wt%Cr, 0.05 0.1wt%Fe, 0.3 0.7wt%B, 0.8 1.8wt%Ni, 0.01 0.03wt%Lu, 0.01 0.03wt%Y, surplus are magnesium.Compared with prior art, the present invention is using Si, Al, Zr, Cr, Fe, B, Ni, Lu, Y, Mg as main component, each interaction between component, influence each other, the tensile strength and heat conductivility of the electronic device magnesium alloy of preparation are improved, can be as the structural material of the cooling system of electronic device.Test result indicates that the electronic device of the invention prepared is 318MPa, thermal conductivity 125W/mK with the tensile strength of magnesium alloy.
Description
Technical field
The present invention relates to magnesium alloy technical field, more particularly to a kind of electronic device magnesium alloy and preparation method thereof.
Background technology
The cooling system structure material of power supply, electronic device in aerospace, had both required excellent heat conductivility, at the same time
Must also have the characteristics that density is small, intensity is high.Therefore, high intensity, high heat conduction magnesium alloy have important application background.
In the prior art, magnesium alloy and preparation method thereof has obtained extensive report, for example, Application No.
201410528634.4 Chinese patent literature reports a kind of magnesium alloy and preparation method thereof, magnesium alloy member preparation method, magnesium
Mass percent shared by the zinc that alloy includes be 1% to 8%, comprising calcium shared by mass percent be 0.1% to 2%, remaining
For magnesium；In the preparation, suitable zinc, calcium and magnesium raw material are first extracted, then by magnesium raw material in protective gas with the first temperature model
Enclose and interior melted to obtain magnesium liquid；Zinc raw material and calcium raw material are added in magnesium liquid again and melted to obtain magnesium alloy solution.
Corresponding magnesium alloy member can be obtained after to magnesium alloy solution by way of casting or Hpdc.Application No.
The special a kind of magnesium alloy of document report of 201510926114.3 China, by weight containing manganese 6-7%, silicon 0.2-1%, vanadium 1-
1.5%th, iron 0.1-0.15%, tungsten 0.15-0.3%, zinc 0.2-0.5%, surplus for magnesium and are difficult to the impurity removed；Above-mentioned dispensing
Be sufficiently mixed 2 hours it is air-cooled after be put into furnace and heat, carry out die casting work after the completion of heating, die casting is complete be put into it is outdoor into
Row is air-cooled.A kind of magnesium alloy materials of Application No., are made of the magnesium alloy of the Al containing 7.3 mass %-16 mass %, by the magnesium
When the content of the Al of alloy material entirety is set to x mass %, the content of Al is more than 0.8x mass % and below 1.2x mass %
Region be more than 50 area %, the content of Al is that region more than 1.4x mass % is below 17.5 area %, and substantially
The upper content there is no Al is the region of below 4.2 mass %.
But the intensity and heat conductivility of the magnesium alloy of above-mentioned report are up for further improving.
The content of the invention
Present invention solves the technical problem that being to provide a kind of electronic device magnesium alloy and preparation method thereof, have good
Tensile strength and heat conductivility.
In view of this, the present invention provides a kind of electronic device magnesium alloy, including following component：4-7wt%Si, 1-
4wt%Al, 0.1-0.5wt%Zr, 0.2-0.6wt%Cr, 0.05-0.1wt%Fe, 0.3-0.7wt%B, 0.8-1.8wt%
Ni, 0.01-0.03wt%Lu, 0.01-0.03wt%Y, surplus are magnesium.
Preferably, 4-5wt%Si.
Preferably, 1-3wt%Al.
Preferably, 0.3-0.5wt%Zr.
Preferably, 0.2-0.4wt%Cr.
Preferably, 0.07-0.1wt%Fe.
Preferably, 0.3-0.5wt%B.
Preferably, 0.8-1.2wt%Ni.
Preferably, 0.01-0.02wt%Lu.
Correspondingly, the present invention also provides a kind of preparation method of the electronic device magnesium alloy described in above-mentioned technical proposal,
Comprise the following steps：Set crucible temperature to begin to warm up as 700-720 DEG C, Mg added when crucible temperature reaches 300-320 DEG C,
It is passed through protective gas；After Mg is completely melt, sequentially add preheating after Mg-Si, Al, Mg-Zr, Mg-Cr, Mg-Mo, Mg-Fe,
Mg-B, Mg-Ni, Mg-Lu, Mg-Y, stirring, removes surface scum, casting, obtains ingot casting；By ingot casting with 260 DEG C in Muffle furnace
Temperature 3 it is small when, be warming up to 360 DEG C insulation 3 it is small when, be continuously heating to 450 DEG C insulation 1 it is small when, then quench in warm water
Fire；Ingot casting after Homogenization Treatments is compressing, obtain electronic device magnesium alloy.
The present invention provides a kind of electronic device magnesium alloy and preparation method thereof, including following component：4-7wt%Si, 1-
4wt%Al, 0.1-0.5wt%Zr, 0.2-0.6wt%Cr, 0.05-0.1wt%Fe, 0.3-0.7wt%B, 0.8-1.8wt%
Ni, 0.01-0.03wt%Lu, 0.01-0.03wt%Y, surplus are magnesium.Compared with prior art, the present invention with Si, Al, Zr,
Cr, Fe, B, Ni, Lu, Y, Mg are main component, and each interaction between component, influence each other, and the electronic device for improving preparation is used
The tensile strength and heat conductivility of magnesium alloy, can be as the structural material of the cooling system of electronic device.Test result indicates that
Electronic device prepared by the present invention is 318MPa, thermal conductivity 125W/mK with the tensile strength of magnesium alloy.
Embodiment
For a further understanding of the present invention, the preferred embodiment of the invention is described with reference to embodiment, still
It should be appreciated that these descriptions are simply further explanation the features and advantages of the present invention, rather than to the claims in the present invention
Limitation.
The embodiment of the invention discloses a kind of electronic device magnesium alloy, including following component：4-7wt%Si, 1-4wt%
Al, 0.1-0.5wt%Zr, 0.2-0.6wt%Cr, 0.05-0.1wt%Fe, 0.3-0.7wt%B, 0.8-1.8wt%Ni,
0.01-0.03wt%Lu, 0.01-0.03wt%Y, surplus are magnesium.
Preferably, 4-5wt%Si, 1-3wt%Al, 0.3-0.5wt%Zr, 0.2-0.4wt%Cr, 0.07-
0.1wt%Fe, 0.3-0.5wt%B, 0.8-1.2wt%Ni, 0.01-0.02wt%Lu.
Correspondingly, the present invention also provides a kind of preparation method of the electronic device magnesium alloy described in above-mentioned technical proposal,
Comprise the following steps：Set crucible temperature to begin to warm up as 700-720 DEG C, Mg added when crucible temperature reaches 300-320 DEG C,
It is passed through protective gas；After Mg is completely melt, sequentially add preheating after Mg-Si, Al, Mg-Zr, Mg-Cr, Mg-Mo, Mg-Fe,
Mg-B, Mg-Ni, Mg-Lu, Mg-Y, stirring, removes surface scum, casting, obtains ingot casting；By ingot casting with 260 DEG C in Muffle furnace
Temperature 3 it is small when, be warming up to 360 DEG C insulation 3 it is small when, be continuously heating to 450 DEG C insulation 1 it is small when, then quench in warm water
Fire；Ingot casting after Homogenization Treatments is compressing, obtain electronic device magnesium alloy.
The present invention provides a kind of electronic device magnesium alloy and preparation method thereof, including following component：4-7wt%Si, 1-
4wt%Al, 0.1-0.5wt%Zr, 0.2-0.6wt%Cr, 0.05-0.1wt%Fe, 0.3-0.7wt%B, 0.8-1.8wt%
Ni, 0.01-0.03wt%Lu, 0.01-0.03wt%Y, surplus are magnesium.Compared with prior art, the present invention with Si, Al, Zr,
Cr, Fe, B, Ni, Lu, Y, Mg are main component, and each interaction between component, influence each other, and the electronic device for improving preparation is used
The tensile strength and heat conductivility of magnesium alloy, can be as the structural material of the cooling system of electronic device.Test result indicates that
Electronic device prepared by the present invention is 318MPa, thermal conductivity 125W/mK with the tensile strength of magnesium alloy.
For a further understanding of the present invention, technical solution provided by the invention is carried out specifically with reference to embodiment
Bright, protection scope of the present invention is not limited by the following examples.
The raw material that the embodiment of the present invention uses is purchased in market.
Embodiment 1
The chemical composition of electronic device magnesium alloy：4wt%Si, 1wt%Al, 0.5wt%Zr, 0.2wt%Cr,
0.1wt%Fe, 0.3wt%B, 1.8wt%Ni, 0.01wt%Lu, 0.03wt%Y, surplus are magnesium.
Preparation method：Set crucible temperature to begin to warm up as 700-720 DEG C, add when crucible temperature reaches 300-320 DEG C
Enter Mg, be passed through protective gas；
After Mg is completely melt, sequentially add preheating after Mg-Si, Al, Mg-Zr, Mg-Cr, Mg-Mo, Mg-Fe, Mg-B,
Mg-Ni, Mg-Lu, Mg-Y, stirring, removes surface scum, casting, obtains ingot casting；
By ingot casting it is small with 260 DEG C of temperature 3 in Muffle furnace when, be warming up to 360 DEG C insulation 3 it is small when, continue to heat up
To 450 DEG C insulation 1 it is small when, then in warm quenching-in water；
Ingot casting after Homogenization Treatments is compressing, obtain electronic device magnesium alloy plate.
The electronic device prepared to the embodiment of the present invention is detected with the performance of magnesium alloy plate, at room temperature, magnesium alloy
Tensile strength be 315MPa, thermal conductivity 122W/mK.
Embodiment 2
The chemical composition of electronic device magnesium alloy：7wt%Si, 1wt%Al, 0.5wt%Zr, 0.6wt%Cr,
0.05wt%Fe, 0.7wt%B, 0.8wt%Ni, 0.03wt%Lu, 0.01wt%Y, surplus are magnesium.
Preparation method：Set crucible temperature to begin to warm up as 700-720 DEG C, add when crucible temperature reaches 300-320 DEG C
Enter Mg, be passed through protective gas；
After Mg is completely melt, sequentially add preheating after Mg-Si, Al, Mg-Zr, Mg-Cr, Mg-Mo, Mg-Fe, Mg-B,
Mg-Ni, Mg-Lu, Mg-Y, stirring, removes surface scum, casting, obtains ingot casting；
By ingot casting it is small with 260 DEG C of temperature 3 in Muffle furnace when, be warming up to 360 DEG C insulation 3 it is small when, continue to heat up
To 450 DEG C insulation 1 it is small when, then in warm quenching-in water；
Ingot casting after Homogenization Treatments is compressing, obtain electronic device magnesium alloy plate.
The electronic device prepared to the embodiment of the present invention is detected with the performance of magnesium alloy plate, at room temperature, magnesium alloy
Tensile strength be 317MPa, thermal conductivity 123W/mK.
Embodiment 3
The chemical composition of electronic device magnesium alloy：5wt%Si, 2wt%Al, 0.3wt%Zr, 0.4wt%Cr,
0.08wt%Fe, 0.5wt%B, 0.9wt%Ni, 0.02wt%Lu, 0.01wt%Y, surplus are magnesium.
Preparation method：Set crucible temperature to begin to warm up as 700-720 DEG C, add when crucible temperature reaches 300-320 DEG C
Enter Mg, be passed through protective gas；
After Mg is completely melt, sequentially add preheating after Mg-Si, Al, Mg-Zr, Mg-Cr, Mg-Mo, Mg-Fe, Mg-B,
Mg-Ni, Mg-Lu, Mg-Y, stirring, removes surface scum, casting, obtains ingot casting；
By ingot casting it is small with 260 DEG C of temperature 3 in Muffle furnace when, be warming up to 360 DEG C insulation 3 it is small when, continue to heat up
To 450 DEG C insulation 1 it is small when, then in warm quenching-in water；
Ingot casting after Homogenization Treatments is compressing, obtain electronic device magnesium alloy plate.
The electronic device prepared to the embodiment of the present invention is detected with the performance of magnesium alloy plate, at room temperature, magnesium alloy
Tensile strength be 318MPa, thermal conductivity 125W/mK.
Embodiment 4
The chemical composition of electronic device magnesium alloy：6wt%Si, 3wt%Al, 0.2wt%Zr, 0.3wt%Cr,
0.06wt%Fe, 0.4wt%B, 1.5wt%Ni, 0.03wt%Lu, 0.02wt%Y, surplus are magnesium.
Preparation method：Set crucible temperature to begin to warm up as 700-720 DEG C, add when crucible temperature reaches 300-320 DEG C
Enter Mg, be passed through protective gas；
After Mg is completely melt, sequentially add preheating after Mg-Si, Al, Mg-Zr, Mg-Cr, Mg-Mo, Mg-Fe, Mg-B,
Mg-Ni, Mg-Lu, Mg-Y, stirring, removes surface scum, casting, obtains ingot casting；
By ingot casting it is small with 260 DEG C of temperature 3 in Muffle furnace when, be warming up to 360 DEG C insulation 3 it is small when, continue to heat up
To 450 DEG C insulation 1 it is small when, then in warm quenching-in water；
Ingot casting after Homogenization Treatments is compressing, obtain electronic device magnesium alloy plate.
The electronic device prepared to the embodiment of the present invention is detected with the performance of magnesium alloy plate, at room temperature, magnesium alloy
Tensile strength be 315MPa, thermal conductivity 124W/mK.
The explanation of above example is only intended to help to understand method and its core concept of the invention.It should be pointed out that pair
For those skilled in the art, without departing from the principle of the present invention, the present invention can also be carried out
Some improvement and modification, these are improved and modification is also fallen into the protection domain of the claims in the present invention.
The foregoing description of the disclosed embodiments, enables professional and technical personnel in the field to realize or use the present invention.
A variety of modifications to these embodiments will be apparent for those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, it is of the invention
The embodiments shown herein is not intended to be limited to, and is to fit to and the principles and novel features disclosed herein phase one
The most wide scope caused.
Claims (10)
1. a kind of electronic device magnesium alloy, it is characterised in that including following component：
4-7wt%Si, 1-4wt%Al, 0.1-0.5wt%Zr, 0.2-0.6wt%Cr, 0.05-0.1wt%Fe, 0.3-
0.7wt%B, 0.8-1.8wt%Ni, 0.01-0.03wt%Lu, 0.01-0.03wt%Y, surplus are magnesium.
2. electronic device magnesium alloy according to claim 1, it is characterised in that 4-5wt%Si.
3. electronic device magnesium alloy according to claim 1, it is characterised in that 1-3wt%Al.
4. electronic device magnesium alloy according to claim 1, it is characterised in that 0.3-0.5wt%Zr.
5. electronic device magnesium alloy according to claim 1, it is characterised in that 0.2-0.4wt%Cr.
6. electronic device magnesium alloy according to claim 1, it is characterised in that 0.07-0.1wt%Fe.
7. electronic device magnesium alloy according to claim 1, it is characterised in that 0.3-0.5wt%B.
8. electronic device magnesium alloy according to claim 1, it is characterised in that 0.8-1.2wt%Ni.
9. electronic device magnesium alloy according to claim 1, it is characterised in that 0.01-0.02wt%Lu.
A kind of 10. preparation method of the electronic device magnesium alloy described in claim 1-9 any one, it is characterised in that bag
Include following steps：
Set crucible temperature to begin to warm up as 700-720 DEG C, Mg is added when crucible temperature reaches 300-320 DEG C, be passed through protection
Property gas；
After Mg is completely melt, sequentially add preheating after Mg-Si, Al, Mg-Zr, Mg-Cr, Mg-Mo, Mg-Fe, Mg-B, Mg-Ni,
Mg-Lu, Mg-Y, stirring, removes surface scum, casting, obtains ingot casting；
By ingot casting it is small with 260 DEG C of temperature 3 in Muffle furnace when, be warming up to 360 DEG C insulation 3 it is small when, be continuously heating to 450
DEG C insulation 1 it is small when, then in warm quenching-in water；
Ingot casting after Homogenization Treatments is compressing, obtain electronic device magnesium alloy.
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| CN201711333574.0A CN107904462A (en) | 2017-12-13 | 2017-12-13 | A kind of electronic device magnesium alloy and preparation method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110066949A (en) * | 2019-06-04 | 2019-07-30 | 江西省科学院应用物理研究所 | A kind of nickel modified silicon-containing magnesium alloy and preparation method thereof |
| CN111455244A (en) * | 2020-04-24 | 2020-07-28 | 葛家玉 | Magnesium alloy |
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| CN101405417A (en) * | 2006-03-20 | 2009-04-08 | 国立大学法人熊本大学 | High-strength high-toughness magnesium alloy and method for producing the same |
| CN101572851A (en) * | 2008-04-29 | 2009-11-04 | 沈阳航空工业学院 | Magnesium alloy integrally cast sound box and manufacturing method thereof |
| CN103740992A (en) * | 2014-01-16 | 2014-04-23 | 张霞 | Multi-element heat-resistant magnesium alloy and preparation method thereof |
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2017
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JP3568945B1 (en) * | 2003-09-19 | 2004-09-22 | 住友電工スチールワイヤー株式会社 | Magnesium-based alloy pipe and method of manufacturing the same |
| CN101405417A (en) * | 2006-03-20 | 2009-04-08 | 国立大学法人熊本大学 | High-strength high-toughness magnesium alloy and method for producing the same |
| CN101572851A (en) * | 2008-04-29 | 2009-11-04 | 沈阳航空工业学院 | Magnesium alloy integrally cast sound box and manufacturing method thereof |
| CN103740992A (en) * | 2014-01-16 | 2014-04-23 | 张霞 | Multi-element heat-resistant magnesium alloy and preparation method thereof |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110066949A (en) * | 2019-06-04 | 2019-07-30 | 江西省科学院应用物理研究所 | A kind of nickel modified silicon-containing magnesium alloy and preparation method thereof |
| CN111455244A (en) * | 2020-04-24 | 2020-07-28 | 葛家玉 | Magnesium alloy |
| CN111455244B (en) * | 2020-04-24 | 2021-07-20 | 山西恒镁新材料科技有限公司 | Magnesium alloy |
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Application publication date: 20180413 |