CN107895691B - 一种提升光伏电池扩散制结效率的方法 - Google Patents
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- 238000009792 diffusion process Methods 0.000 title claims abstract description 14
- 238000000034 method Methods 0.000 title claims description 9
- 230000008021 deposition Effects 0.000 claims abstract description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 11
- 239000010703 silicon Substances 0.000 claims abstract description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 72
- 229910052757 nitrogen Inorganic materials 0.000 claims description 36
- 238000000151 deposition Methods 0.000 claims description 31
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- 239000001301 oxygen Substances 0.000 claims description 27
- CDEYXZGQFROSDD-UHFFFAOYSA-N [O].P(Cl)(Cl)Cl Chemical compound [O].P(Cl)(Cl)Cl CDEYXZGQFROSDD-UHFFFAOYSA-N 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 10
- 239000010453 quartz Substances 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 238000001816 cooling Methods 0.000 claims description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052698 phosphorus Inorganic materials 0.000 abstract description 4
- 239000011574 phosphorus Substances 0.000 abstract description 4
- 238000005215 recombination Methods 0.000 abstract description 4
- 230000006798 recombination Effects 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 238000002161 passivation Methods 0.000 abstract description 2
- 239000000969 carrier Substances 0.000 description 2
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- 230000009286 beneficial effect Effects 0.000 description 1
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Abstract
本发明涉及光伏电池生产领域。一种提升光伏电池扩散制结效率的方法,对硅片进行氧化后,首先进行较低温度的大流量沉积,然后采用较高温度的大流量推进,提高PN结深度,然后采用三次较高温度的小流量沉积和推进,在硅片表面形成渐变场浓度梯度更陡的磷扩散。本发明通过渐变场钝化效应来降低表面复合速率,实现后可以提升效率至少0.07%,同时扩散均匀性改善,对于组件抗PID也有所提升。
Description
技术领域
本发明涉及光伏电池生产领域。
背景技术
扩散制结工艺是电池制造过程的关键工序,主要作用在于形成PN结,通过内置电场收集光生载流子。目前扩散工艺包括普通扩散与低压扩散。由于工艺流程本身的问题,不易做到浅结低表面浓度的结构,由此提效存在一定的困难。
发明内容
本发明所要解决的技术问题是:如何通过沉积推进来降低表面复合速率,同时提高光伏电池的效率。
本发明所采用的技术方案是:一种提升光伏电池扩散制结效率的方法,按照如下的步骤进行
步骤一、保持氮气流量7slm,将携带硅片的石英舟以35cm/min的速度进入充满氮气的石英炉管中,关闭炉门,以10℃/min的升温速率升温至780℃,保温2分钟,保持氮气流量7slm,氧气流量2slm,保温5分钟;
步骤二、第一次沉积,保持温度810℃,保持氮气流量7slm,三氯化氧磷流量1.45slm,氧气流量1.16slm,沉积时间为7分钟;第一次推进,以10℃/min的升温速率升温到830 ℃,保持氮气流量7slm、氧气流量为2.9slm,推进时间为6min;
步骤三、第二次沉积,保持温度830℃,氮气流量7slm,三氯化氧磷流量1.45slm、氧气流量为1.16slm,沉积时间为3min;第二次推进,保持温度830℃,氮气流量7slm,氧气流量为1.5slm,推进时间为3min;
步骤四、第三次沉积,保持温度830℃,氮气流量7slm,三氯化氧磷流量1.45slm、氧气流量为1.16slm,沉积时间为1min;第三次推进,保持温度830℃,氮气流量7slm,氧气流量为1.5slm,推进时间为1min;
步骤五、第四次沉积,保持温度830℃,氮气流量7slm,三氯化氧磷流量1.45slm、氧气流量为1.16slm,沉积时间为1min;第四次推进,保持温度830℃,氮气流量7slm,氧气流量为1.5slm,推进时间为1min;
步骤六、以10℃/min的降温速率将温度降到780℃,保持氮气流量7slm,以40cm/min速度出舟。
本发明的有益效果是:对硅片进行氧化后,首先进行较低温度的大流量沉积,然后采用较高温度的大流量推进,提高PN结深度,然后采用三次较高温度的小流量沉积和推进,在硅片表面形成渐变场浓度梯度更陡的磷扩散。本发明通过渐变场钝化效应来降低表面复合速率,实现后可以提升效率至少0.07%,同时扩散均匀性改善,对于组件抗PID也有所提升。
具体实施方式
一种提升光伏电池扩散制结效率的方法,按照如下的步骤进行
步骤一、保持氮气流量7slm,将携带硅片的石英舟以35cm/min的速度进入充满氮气的石英炉管中,关闭炉门,以10℃/min的升温速率升温至780℃,保温2分钟,保持氮气流量7slm,氧气流量2slm,保温5分钟;通过沉积前氧化使后续磷源在硅片表面充分堆积。
步骤二、第一次沉积,保持温度810℃,保持氮气流量7slm,三氯化氧磷流量1.45slm,氧气流量1.16slm,沉积时间为7分钟;第一次推进,以10℃/min的升温速率升温到830 ℃,保持氮气流量7slm,氧气流量为2.9slm,推进时间为6min;此步骤中主要控制结的深度与掺杂浓度的大小,因此采用较低温度的沉积和较高温度的推进,并采用大流量形成较大的掺杂浓度,使磷源在硅片表面更深层形成PN结,提高光伏电池的效率。
步骤三、第二次沉积,保持温度830℃,氮气流量7slm,三氯化氧磷流量1.45slm、氧气流量为1.16slm,沉积时间为3min;第二次推进,保持温度830℃,氮气流量7slm,氧气流量为1.5slm,推进时间为3min;
步骤四、第三次沉积,保持温度830℃,氮气流量7slm,三氯化氧磷流量1.45slm、氧气流量为1.16slm,沉积时间为1min;第三次推进,保持温度830℃,氮气流量7slm,氧气流量为1.5slm,推进时间为1min;
步骤五、第四次沉积,保持温度830℃,氮气流量7slm,三氯化氧磷流量1.45slm、氧气流量为1.16slm,沉积时间为1min;第四次推进,保持温度830℃,氮气流量7slm,氧气流量为1.5slm,推进时间为1min;
通过后续三次等温并且较高温度的沉积和推进,形成表面渐变场,采用较短的时间使渐变场浓度梯度更陡,更易收集光生载流子,有效提高对太阳光的吸收效率,降低表面复合速率。
步骤六、以10℃/min的降温速率将温度降到780℃,保持氮气流量7slm,以40cm/min速度出舟。降温后保温出炉,相等于直接对硅片进行了热处理,使四次沉积和推进的中间截面更融合,提高了光伏电池的扩散均匀性。
Claims (1)
1.一种提升光伏电池扩散制结效率的方法,其特征在于:按照如下的步骤进行
步骤一、保持氮气流量7slm,将携带硅片的石英舟以35cm/min的速度进入充满氮气的石英炉管中,关闭炉门,以10℃/min的升温速率升温至780℃,保温2分钟,保持氮气流量7slm,氧气流量2slm,保温5分钟;
步骤二、第一次沉积,保持温度810℃,保持氮气流量7slm,三氯化氧磷流量1.45slm,氧气流量1.16slm,沉积时间为7分钟;第一次推进,以10℃/min的升温速率升温到830 ℃,保持氮气流量7slm、氧气流量为2.9slm,推进时间为6min;
步骤三、第二次沉积,保持温度830℃,氮气流量7slm,三氯化氧磷流量1.45slm、氧气流量为1.16slm,沉积时间为3min;第二次推进,保持温度830℃,氮气流量7slm,氧气流量为1.5slm,推进时间为3min;
步骤四、第三次沉积,保持温度830℃,氮气流量7slm,三氯化氧磷流量1.45slm、氧气流量为1.16slm,沉积时间为1min;第三次推进,保持温度830℃,氮气流量7slm,氧气流量为1.5slm,推进时间为1min;
步骤五、第四次沉积,保持温度830℃,氮气流量7slm,三氯化氧磷流量1.45slm、氧气流量为1.16slm,沉积时间为1min;第四次推进,保持温度830℃,氮气流量7slm,氧气流量为1.5slm,推进时间为1min;
步骤六、以10℃/min的降温速率将温度降到780℃,保持氮气流量7slm,以40cm/min速度出舟。
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CN103618019A (zh) * | 2013-08-13 | 2014-03-05 | 苏州盛康光伏科技有限公司 | 一种晶体硅太阳能电池片扩散方法 |
CN105185870A (zh) * | 2015-09-17 | 2015-12-23 | 江西展宇新能源股份有限公司 | 一种硅片的磷吸杂扩散工艺 |
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EP2048716A2 (en) * | 2007-10-08 | 2009-04-15 | CSI Cells Co. Ltd. | A process of phosphorus diffusion for manufacturing solar cell |
CN103618019A (zh) * | 2013-08-13 | 2014-03-05 | 苏州盛康光伏科技有限公司 | 一种晶体硅太阳能电池片扩散方法 |
CN105185870A (zh) * | 2015-09-17 | 2015-12-23 | 江西展宇新能源股份有限公司 | 一种硅片的磷吸杂扩散工艺 |
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