CN107893179A - Disk aluminium alloy base substrate and disk aluminium alloy substrate - Google Patents
Disk aluminium alloy base substrate and disk aluminium alloy substrate Download PDFInfo
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- CN107893179A CN107893179A CN201710883609.1A CN201710883609A CN107893179A CN 107893179 A CN107893179 A CN 107893179A CN 201710883609 A CN201710883609 A CN 201710883609A CN 107893179 A CN107893179 A CN 107893179A
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- plated film
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C21/00—Alloys based on aluminium
- C22C21/06—Alloys based on aluminium with magnesium as the next major constituent
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/04—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of aluminium or alloys based thereon
- C22F1/047—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of aluminium or alloys based thereon of alloys with magnesium as the next major constituent
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- G11B5/7315—
Abstract
There is provided a kind of surface defect to be difficult to occur, disk the aluminium alloy base substrate and disk aluminium alloy substrate of the plated film on smooth surface can be formed.Disk contains Mg with aluminium alloy base substrate and disk aluminium alloy substrate：3.5~6.2 mass %, and meeting Ti：0.0005~0.0020 mass %, V：0.0005~0.0020 mass %, Zr：0.0002~0.0020 mass % and relational expression：At least one of in the range of the mass % of Ti+V+Zr≤0.0020, containing Ti, V and Zr, surplus is made up of Al and inevitable impurity, and the absolute maximum length of Al- (Ti, V, the Zr) series intermetallic compound on surface is less than 1 μm.
Description
Technical field
The present invention relates to disk aluminium alloy base substrate and disk aluminium alloy substrate.
Background technology
The possessed disk such as external record device of computer, there is magnetosphere, protective layer etc. to be laminated on substrate
Construction.As the substrate of disk, it is similarly non magnetic with glass substrate, also good aluminium alloy plate is extensive for light weight and processability
Use.As aluminium alloy plate, use with high intensity, machining accuracy is high, is also equipped with the rigid Al- of resistance to high speed rotation
Mg systems alloy.For example, representational have JIS H 4000：5086 alloys and its improvement alloy of 2014 defineds.
In the manufacture of disk, as the aluminium alloy plate of former material, the processing through punching processing, straightening annealing etc., it is fabricated to
Discoid blank material with holes.Then, the side for blank material carries out end face processing, and interarea carries out grinding etc.,
It is fabricated to the base sheet that surface roughness is small, has smooth interarea.
In the past, the magnetosphere of disk was by being dispersed with magnetic in the surface of the base sheet Jing Guo mirror finish, directly coating
The method of the coating of body and formed.On the other hand, in recent years, magnetosphere is formed with the dry type membrane formation process sputtered etc..Film forming with
Before, implement chemical Ni-P plating in advance for the surface of base sheet.By forming the substrate layer being made up of plated film, so as to magnetosphere
The surface defect of substrate reduce, the magnetospheric precision and adhesion of film forming thereon etc. improves.
Chemical Ni-P plating is the etched processing after ungrease treatment is carried out for base sheet, and is handled and removed by desmut
Crude removal, carry out after zincic acid salt treatment.Zincic acid salt treatment is used to improve the adhesion of plated film and implement, most cases
Under, implement dual zincic acid salt treatment.In dual zincic acid salt treatment, zinc is made on the surface of base sheet by 1st zincic acids salt treatment
After precipitation, more than half dissolving of zinc is first made by nitric acid lift-off processing.Thereafter, carry out 2nd zincic acids salt treatment and zinc is separated out again, by
This forms the flat and fine and close epithelium suitable for film forming plated film.
In recent years, the further densification of the packing density of disk promotes, make magnetic head levitation height be kept as it is lower.
It follows that for forming the plated film in base sheet, it is desirable to there is the flatness of more height.This is due to the table in plated film
Face, it may occur that the surface defect of concave pit, the dross that hemisphere convex is presented etc. is presented, such surface defect, turns into and draws
That plays head crash and misregistration will be because.
The reason formed as pit and dross, it is known that be aluminium parent phase in caused crystallization thing and precipitate.Fiber crops
Point its formed the particle of mainly crystallization thing for exposing by grinding on surface etc. come off or in etching process dissolving and
Pit is produced, the plated film of film forming thereon can also be recessed.In addition, its formation of dross is mainly exposed because of grinding on surface
Crystallization thing etc. the inequality of rolled tin film occur in zincic acid salt treatment homogenize, the plated film misgrowth replaced and separated out by zinc.
On shallow pit and small dross, by the surface of milled processed plated film, can easily be allowed to planarize.Can
It is that during the thick growth of the particle of crystallization thing etc., pit and dross also maximize, therefore are produced to additionally set grind
The needs of increase plated thickness in advance, or the problems such as the required time long life of generation milled processed.Therefore, used in manufacture disk
Former material when, in order to avoid causing the generation of the particle of surface defect, propose there is the chemical composition of adjustment aluminium alloy, or control heat
The technology for the treatment of conditions.
For example, in patent document 1, a kind of manufacture method of magnetic disc substrate aluminium alloy plate is disclosed, wherein, including such as
Lower process：Process is incubated with the liquation liquation of more than 30 minutes of 700~850 DEG C of holding aluminium alloys in holding furnace；For
The casting process that the ingot bar that keeps is cast in liquation insulation process, wherein, melt temperature when starting casting is 700
~850 DEG C；The hot-rolled process of hot rolling is carried out for the ingot bar by casting；The cold rolling process of cold rolling is carried out to hot rolled plate.As
Aluminium alloy, it can enumerate containing Mg：3.0~8.0mass%, Cu：0.005~0.150mass%, Zn：0.05~0.60mass%,
Cr：0.010~0.300mass%, Fe：0.001~0.030mass%, Si：0.001~0.030mass%, additionally contain
(Ti+V+Zr)：0.0010~0.0100mass%, B：0.0001~0.0010mass%, surplus by Al and inevitably it is miscellaneous
Texture into alloy.
In patent document 1, as Ti, V and Zr of the positioning of inevitable impurity, pressed from both sides for Ti-V-B-Zr systems are made
The purpose that the presence density of debris reduces, it can adjust its content.In aluminium alloy plate, make with the longest diameter higher than 5 μm
The presence density of Ti-V-B-Zr systems field trash is 0
/6000mm2, by making the presence density of the Ti-V-B-Zr systems field trash with 3~5 μm of longest diameter be
1/6000mm2Hereinafter, it is considered to access the few smooth coated surface of pit.【Prior art literature】
【Patent document】
【Patent document 1】No. 5762612 publication of Japan's patent
In the parent phase of the aluminium alloy of disk, as disclosed in patent document 1, not only Ti-V-B-Zr systems field trash is given birth to
Into, and the crystallization thing of Al-Fe series intermetallic compounds, Mg-Si series intermetallic compounds etc. also generates, or casting is later
Precipitate generates.Therefore, reduce, still be able to 3 μ even if above the presence density of 3~5 μm of Ti-V-B-Zr systems field trash
The particle of below m left and right generates thick particle for core.Therefore, in the technology disclosed in patent document 1, such particle
Surface state easily in the former material for remaining in disk, generation surface defect can in plated film of the film forming in the surface of former material
Can property height.
In addition, in the technology disclosed in patent document 1, by by liquation with 700~850 DEG C keep more than 30 minutes and
Reduce Ti-V-B-Zr systems field trash.But in such method, need greatly to add when extreme heating liquation
Hot cost, spend and kept for the time of liquation be possible to sacrifice productivity ratio.On the other hand, also having makes parent metal high purity and subtracts
The reply method of the generation of few field trash etc., but cost of material increases, therefore using difficulty in practicality.
The particle of Al-Fe series intermetallic compounds of crystallization etc., comes off, no from the surface of former material particularly in parent phase
Only produce as pit will because pit, and when the state not fall off is impregnated into etching solution, the shape between parent phase
Into local cell.If forming the big local cell of potential difference, prior to intermetallic compound, the dissolving of parent phase is significantly carried out,
On the other hand, intermetallic compound is difficult to dissolve, the easier residue of thick particle.As a result, deep pit along
The border of parent phase and intermetallic compound occurs, or although have passed through etching process, compound between the still residual metallic of surface.In
It is the deep pit so generated, the plated film of film forming thereon is also recessed, makes the surface of plated film that pit occur.
In addition, the pit so generated, in zincic acid salt treatment, has the tendency of easily to separate out thick zinc particles.If
The inside of pit produces thick zinc particles, then at the initial stage of plating, the particle, which turns into, separates out starting point, and plated film is extremely raw
It is long, therefore easily form large-scale dross.In addition, the thick intermetallic compound on surface is remained in, by surrounding growth
Plated film covers, so as to be easily to generate large-scale dross.In addition, if intermetallic compound stays in surface, between plating solution and metal
Compound react and hydrogen occurs because hydrogen diffusion zone plated film can not film forming, easily form poroid cavitation erosion
Hole.
These surface defects caused by the formation of local cell, are difficult to release with the technology described in patent document 1.Separately
Outside, being produced in plated film needs to pre-set extra grind, or the required time long life of milled processed, therefore have can
The increase of manufacturing cost can be caused.Particularly in recent years, for the purpose for the plated film for forming highly smooth surface, it is also desirable to
The soft etching of temperate condition carries out the removing of oxide scale film, reduces the etch damage that the substrate of plated film is subject in advance.But carry out
During soft etching, the particle of Al-Fe series intermetallic compounds etc. easily remains in surface, and local cell may proceed to work, therefore
It is difficult to the plated film to form smooth surface.
The content of the invention
Therefore, it is difficult to surface defect occurs it is an object of the present invention to provide one kind, the plating on smooth surface can be formed
The disk of film aluminium alloy base substrate and disk aluminium alloy substrate.
In order to solve the problem, disk of the invention aluminium alloy base substrate, contain Mg：3.5~6.2 mass %, full
Sufficient Ti：0.0005~0.0020 mass %, V：0.0005~0.0020 mass %, Zr：0.0002~0.0020 mass %, and
Relational expression：At least one of the mass % of Ti+V+Zr≤0.0020 scope, containing Ti, V and Zr, surplus is by Al and can not
The impurity avoided is formed, and the absolute maximum length of Al- (Ti, V, the Zr) series intermetallic compound on surface is less than 1 μm.
According to such disk aluminium alloy base substrate because defined content scope contain Mg and Ti, V and Zr it
At least one of, so each element is dissolved well, it is possible to increase the plating required by the substrate of disk.In detail,
Due to Ti, V and Zr at least one of be dissolved in parent phase, cause the current potential of the parent phase of aluminium alloy to bring up to high potential.Cause
This, the potential difference of parent phase and the crystallization thing of caused Al-Fe series intermetallic compounds in parent phase etc. reduces, in an etching process,
When forming local cell between the intermetallic compound that parent phase and surface are exposed, it can suppress to change between the superfluous dissolving of parent phase, metal
The residue of compound.As a result, caused pit, sent out due to the superfluous dissolving of parent phase due to the residue of intermetallic compound
The surface defect in raw dross, cavitation erosion hole etc., is difficult to occur in plated film.In addition, by meeting relational expression：Ti+V+Zr≤
0.0020 mass %, thick Al- (Ti, V, Zr) series intermetallic compound is difficult to produce, by suppressing cold in straightening annealing
But speed, the absolute maximum length of Al- (Ti, V, the Zr) series intermetallic compound on surface can be made to be in less than 1 μm.Therefore,
Due to Al- (Ti, V, Zr) series intermetallic compound particle come off and residue caused by surface defect, it is also difficult in plated film
Middle generation.Therefore, according to such disk aluminium alloy base substrate, the densification of the packing density suitable for disk can be formed
, the plated film on the smooth surface that surface roughness is small.
The disk aluminium alloy base substrate of the present invention, can also be in Cu：0.010~0.200 mass %, Zn：0.05~0.50
At least one of in the range of quality %, then containing Cu and Zn.
According to such disk aluminium alloy base substrate, except Mg also have Ti, V and Zr at least one of in addition to because
Defined content scope also containing Cu and Zn at least one of, so intensity etc. improves, and zincic acid salt treatment shape
Into rolled tin film turn into thin and compact, the high state of uniformity.Therefore, replaced by zinc in the plated film of film forming, surface defect is more
It is difficult to occur.Therefore, the plated film on the smooth surface of the small height of surface roughness can be formed.
The disk aluminium alloy substrate of the present invention, is made up of described disk with aluminium alloy base substrate.
According to such disk aluminium alloy substrate because with the described disk same chemistry of aluminium alloy base substrate
Composition and metal structure, so the absolute maximum length of Al- (Ti, V, the Zr) series intermetallic compound on surface is less than 1 μm.
Therefore, because the formation of local cell, and surface defect caused by Al- (Ti, V, Zr) series intermetallic compound, in plated film
It is difficult to occur.Therefore, the plated film on the small smooth surface of surface roughness can be formed.
The disk aluminium alloy base substrate of the present invention, for carrying out chemistry with aluminium alloy substrate using its disk as former material manufacture
When plating Ni-P, it is difficult to the surface defect of pit and dross etc. occurs, the plated film on smooth surface can be formed.It is in addition, of the invention
Disk aluminium alloy substrate, when carrying out chemical Ni-P plating, it is difficult to the surface defect of pit and dross etc. occurs, can be with shape
Into the plated film on smooth surface.
Embodiment
Hereinafter, carried out for the disk of an embodiment of the invention with aluminium alloy base substrate and disk with aluminium alloy substrate
Explanation.Further, in this manual, the number range that "~" is stated, the value comprising its both ends.
The disk of present embodiment is with aluminium alloy base substrate and disk aluminium alloy substrate, the former material as the substrate of disk
Use.Disk with aluminium alloy substrate is machining disk aluminium alloy base substrate and manufactured that disk is that processing has with aluminium alloy base substrate
The disk aluminium alloy plate of defined chemical composition and manufacture.
In the following description, the disk of present embodiment is with aluminium alloy plate, disk with aluminium alloy base substrate and disk aluminium
Alloy substrates are only called " aluminium alloy plate ", " base substrate ", " substrate " respectively.
The substrate of present embodiment, during disk is manufactured, plated film is formed by chemical Ni-P plating.It can obtain
The conclusion gone out is that the major part of the surface defect of caused pit and dross etc., was carried out before plating in plated film
Formed in etching process, between the intermetallic compound exposed due to crystallization in the parent phase and parent phase of aluminium alloy on surface local
Caused by battery.Because the big local cell of potential difference is formed, the residue of the superfluous dissolving of parent phase and intermetallic compound is tight
Change again, cause the flatness on the surface of plated film to be damaged.
Therefore, in the base substrate and substrate of present embodiment, by adjusting the chemical composition of aluminium alloy plate, by the electricity of parent phase
Position, which is improved to high potential, reduces the potential difference of parent phase and intermetallic compound, so as to suppress the superfluous dissolving of parent phase, metal
Between compound residue.In addition, by being than ever-faster speed, with reality by cooling velocity control during base substrate straightening annealing
Expose and form the reduction of the intermetallic compound of local cell in the surface of present substrate.Below for the base substrate of present embodiment
The aluminium alloy plate used with substrate as former material, and their manufacture method illustrate.
[aluminium alloy plate]
Aluminium alloy plate is to contain Mg Al-Mg systems alloy in the scope of defined content.In aluminium alloy plate, together with Mg,
In the range of defined content containing Ti, V and Zr at least one of, surplus is made up of Al and inevitable impurity.
By intentionally adding Ti, V and Zr in the scope for the content that can be dissolved, surface defect can be obtained and be difficult to occur, can be formed flat
The base substrate and substrate of the plated film on sliding surface.
But aluminium alloy plate can also be following chemical composition, i.e. except Ti, V and Zr at least one of and Mg
In addition, can also in the range of the suitable content of addition again containing Cu and Zn at least one of, its surplus by Al and
Inevitable impurity is formed.Hereinafter, for the content of each composition contained by aluminium alloy plate, and content restriction the reasons why enter
Row explanation.
(Mg：3.5~6.2 mass %)
Mg contributes to the composition that the intensity of aluminium alloy improves.If Mg is less than 3.5 mass %, aluminium alloy does not possess fully
Intensity, cannot get the mechanical property of the yield strength etc. required by disk.On the other hand, if Mg is higher than 6.2 mass %,
Fire check sensitiveness uprises, and crackle easily occurs during hot rolling aluminium alloy.Therefore, Mg content is more than 3.5 mass %, 6.2 matter
Measure below %.
From the viewpoint of intensity etc. is improved, Mg content is preferably more than 3.7 mass % more preferably 3.9 mass %
More than, more preferably more than 4.1 mass %.On the other hand, Mg content is preferably below 6.0 mass %, is split from reduction
From the viewpoint of the difficulty of generation and the processing of line, preferably below 5.6 mass %, more preferably below 5.2 mass %, enter one
Step is preferably below 4.8 mass %.
(Ti：0.0005~0.0020 mass %)
Ti helps to improve the current potential of the parent phase of aluminium alloy to high potential.Improved by the current potential of parent phase, parent phase with
The potential difference of Al-Fe series intermetallic compounds etc. reduces, when being immersed in etching solution in etching process, the sun of parent phase
Pole reaction is suppressed.It is therefore possible to prevent deep pit occurs on the surface of substrate, or intermetallic compound is with the shape of exposing surface
It is remaining under state, on the plated film of film forming afterwards, it is difficult to the surface defect of pit and dross etc. occurs.
If Ti content is less than 0.0005 mass %, the current potential of parent phase can not be fully improved, thus it is female during etching process
The dissolving of phase is carried out superfluously, and deep pit occurs, or intermetallic compound is in surface residual, large-scale dross and substantial amounts of gas
Pit occurs.In addition, because Ti is inevitably included in parent metal, must high-purity parent metal, meeting
It is unfavorable in manufacturing cost.On the other hand, if Ti content is higher than 0.0020 mass %, Al-Ti series intermetallic compound etc.
Easily separate out, when thick particle occurs, the flatness on the surface of plated film is easily damaged.Therefore, Ti content is 0.0005 matter
Measure more than %, below 0.0020 mass %.
From this viewpoint of the current potential of raising parent phase, Ti content is preferably more than 0.0008 mass %.On the other hand,
From the viewpoint of thick intermetallic compound etc. is avoided, Ti content is preferably below 0.0018 mass %.
(V：0.0005~0.0020 mass %)
V helps to improve the current potential of the parent phase of aluminium alloy to high potential.Because the current potential of parent phase improves, parent phase and Al-
The potential differences of Fe series intermetallic compounds etc. reduces, when during etching process among dip etch liquid etc., the anode reaction quilt of parent phase
Suppress.It is therefore possible to prevent the pit that the surface generation of substrate is deep, or intermetallic compound are remaining with the state of exposing surface,
The plated film of film forming is difficult to the surface defect that pit and dross etc. occurs thereon.
If V content is less than 0.0005 mass %, the current potential of parent phase, therefore parent phase during etching process can not be fully improved
Dissolving superfluous carry out, it may occur that deep pit, or intermetallic compound is in surface residual, large-scale dross and most occurs
Cavitation erosion hole.In addition, V is inevitably included in parent metal, thus must high-purity parent metal, in manufacturing cost
It is upper unfavorable.On the other hand, if V content easily separates out higher than 0.0020 mass %, Al-V series intermetallic compound etc., slightly
When big particle produces, the flatness on the surface of plated film is easily damaged.Therefore, V content be more than 0.0005 mass %,
Below 0.0020 mass %.
From the viewpoint of the current potential for improving parent phase, V content is preferably more than 0.0008 mass %.On the other hand, from
From the viewpoint of avoiding thick intermetallic compound etc., V content is preferably below 0.0018 mass %.
(Zr：0.0002~0.0020 mass %)
Zr helps to improve the current potential of the parent phase of aluminium alloy to high potential.Due to parent phase current potential raise, parent phase with
The potential difference of Al-Fe series intermetallic compounds etc. reduces, among being impregnated into etching process in etching solution etc., the sun of parent phase
Pole reaction is suppressed.It is therefore possible to prevent deep pit occurs for the surface of substrate, or intermetallic compound is with the state of exposing surface
Residue, in the plated film of film forming thereon, it is difficult to the surface defect of pit and dross etc. occurs.
If Zr content is less than 0.0002 mass %, it is impossible to fully improves the current potential of parent phase, therefore parent phase during etching process
Dissolving superfluous carry out, it may occur that deep pit, or intermetallic compound is in surface residual, large-scale dross and most occurs
Cavitation erosion hole.In addition, Zr inevitably includes in parent metal, thus must high-purity parent metal, in manufacturing cost
It is upper unfavorable.On the other hand, if Zr content easily separates out higher than 0.0020 mass %, Al-Zr series intermetallic compound etc.,
When thick particle produces, the flatness on the surface of plated film is easily damaged.Therefore, Zr content be more than 0.0002 mass %,
Below 0.0020 mass %.
From the viewpoint of the current potential for improving parent phase, Zr content is preferably more than 0.0005 mass %.On the other hand, from
From the viewpoint of avoiding thick intermetallic compound etc., Zr content is preferably below 0.0018 mass %.
(Ti+V+Zr≤0.0020 mass %)
Ti, V and Zr as aluminium alloy plate composition by comprising when content, to meet relational expression：Ti+V+Zr≤0.0020
Quality % mode is any limitation as.Even if this is due to the respective content of restricted T i, V and Zr, and as composition contain a variety of when,
Still easily separate out Al- (Ti, V, the Zr) series intermetallic compound blended together.Further, Al- (Ti, V, Zr) series intermetallic compound,
Mean containing Ti, V and Zr at least one of intermetallic compound with Al.
If Ti+V+Zr easily separates out higher than 0.0020 mass %, Al- (Ti, V, Zr) series intermetallic compound, base substrate
When 250 DEG C or so are cooled in straightening annealing, thick particle is easily produced.Moreover, Al- (Ti, V, Zr) is between metal
Compound is same with Al-Fe series intermetallic compounds, is come off from the surface of substrate and produces pit, or formed between parent phase
Local cell, turn into that surface defect occurs for plated film will be because.On the other hand, if Ti, V or Zr are added, the not only electricity of parent phase
Position rise, and crystal grain obtains miniaturization and toughness improves.Therefore, Ti, V and Zr content be aggregated in 0.0020 mass % with
Under.
From improve parent phase current potential from the viewpoint of, Ti, V and Zr content it is total be preferably 0.0010 mass % with
On, more preferably more than 0.0015 mass %.On the other hand, Ti, V and Zr content is total, from avoiding between thick metal
From the viewpoint of compound etc., preferably below 0.0018 mass %, more preferably below 0.0016 mass %.
(Cu≤0.200 mass %)
Cu has the effect for separating out zinc uniformity highland in zincic acid salt treatment.By containing Cu, zinc in aluminium alloy
Precipitation starting point become with the distribution of speed of separating out as, Al superfluous dissolution is suppressed, on the other hand, Bao Erzhi can be made
The high rolled tin film of dense and uniform property is formed.Therefore, the substrate flatness of plated film and it is fine and close, by the amount of precipitation also one of the plated film of its displacement
Sample, the flatness on the surface of plated film improve.
If Cu content is higher than the easy crystallization such as 0.200 mass %, Al-Cu series intermetallic compound, thick particle
During generation, the flatness on the surface of plated film is easily damaged.In addition, Cu in crystal boundary while be thickened while produce poor layer, crystal boundary quilt
Etch superfluously and pit easily occurs, therefore surface defect easily occurs for the plated film of film forming thereon.In addition, from galvanic corrosion
Corrosivity has and may also increased.Therefore, Cu content is more than 0 mass %, below 0.200 mass %, is arbitrarily added as needed
Add.
From the substrate flatness of plated film from the viewpoint of densification, Cu content is preferably more than 0.010 mass %.The opposing party
Face, from the viewpoint of etching for avoiding surplus etc., Cu content is preferably below 0.160 mass %.
(Zn≤0.50 mass %)
Zn has the effect for separating out zinc uniformity highland in zincic acid salt treatment.By containing Zn, zinc in aluminium alloy
Precipitation starting point by discrete and equably provide, the distribution of the precipitation starting point, speed of separating out of zinc becomes the same, and Al's is superfluous molten
Go out to be inhibited, on the other hand, can be formed the epithelium of thin and compact and high uniformity zinc.In addition, in an etching process, because
For parent phase dissolving starting point by discrete and impartial offer, so can suppress to occur on the surface of aluminium alloy brilliant caused by crystal grain
Boundary's ladder, the uniformity of the epithelium of zinc further improve.Therefore, the substrate of plated film becomes flat and fine and close, by the plating of its displacement
The amount of precipitation of film is same, and the flatness on the surface of plated film improves.
If Zn content is higher than easy crystallization such as 0.50 mass %, Al-Fe-Zn series intermetallic compounds, thick
When particle produces, the flatness on the surface of plated film is easily damaged.In addition, starting point and the etching of the precipitation of zinc in zincic acid salt treatment
The starting point of dissolving in processing becomes superfluous, it is possible to which zinc occurs on the surface of substrate separates out skewness and deep pit.
Therefore, Zn content is more than 0 mass %, below 0.50 mass %, is arbitrarily added as needed.
From the substrate flatness for making plated film from the viewpoint of densification, Zn content is preferably more than 0.05 mass %.It is another
Aspect, from the viewpoint of etching for avoiding surplus etc., Zn content is preferably below 0.45 mass %.
(inevitable impurity)
Inevitable impurity be can via the mixed Fe, Si such as aluminum substrate metal, intermediate alloy, manufacturing process, Mn,
Ni, Cr, B etc..Fe easily crystallizes out Al-Fe series intermetallic compounds, and Mn easily crystallizes out Al-Mn series intermetallic compounds,
Ni easily crystallizes out Al-Ni series intermetallic compounds, and Cr easily crystallizes out Al-Cr series intermetallic compounds etc..In addition, Si
Easily crystallize out Mg-Si series intermetallic compounds, residual oxide after etching process, bring what semicircular in shape vesicle occurred etc.
Drawback.In addition, B mainly combines with Ti, V, Zr etc., Ti, V and Zr segregation for being used in the current potential for improving parent phase and adding.Therefore,
B content is limited in below 0.0002 mass %.In addition, the content of other inevitably impurity, is limited in each element
Below 0.030 mass %.
In inevitable impurity, Fe is preferably in below 0.025 mass %, and Si is preferably in below 0.025 mass %.
In addition, Mn is preferably in below 0.005 mass %, Ni is preferably in below 0.001 mass %.
In inevitable impurity, if the content of element is respectively in described scope, the element actively added
Also the effect of the present invention will not seriously be hindered.Further, the content of inevitable impurity, for example, on aluminum substrate metal with
Between the parent metal that uses of alloy, can be allowed to reduce by suitable methods such as segregation method, three layers of electrolytic refining processes.
Here, illustrated for one of the manufacture method of aluminium alloy plate.The manufacture method of aluminium alloy plate, as main
Process include casting process, facing manufacturing procedure, the heat treatment step that homogenizes, hot-rolled process, cold rolling process and form.
By implementing these processes in order, the aluminium of the banding with described chemical composition by the raw material of parent metal etc., can be manufactured
Alloy sheets.
In casting process, the parent metal and alloying component of molten aluminum, it is allowed to solidify and the ingot bar of cast aluminium alloy gold.Aluminium
The liquation of alloy by the inert gas of argon gas etc. preferably by being blown into melting furnace to carry out Dehydroepiandrosterone derivative.In addition, at by dehydrogenation
The liquation of reason is preferably de-gassed processing under agitation, removes hydrogen and inert gas in advance.In addition, the liquation of aluminium alloy is melted
It is preferred that carrying out filtration treatment in advance with ceramic filter etc., thick crystallization thing and non-metallic inclusion etc. are removed.
Casting process is generally carried out by semi-continuous casting method.Specifically, the liquation of aluminium alloy is poured into junker mold
In, carry out water cooling from side and be allowed to solidify.The liquation of cast, along with the decline of the pedestal of the lower mould of supporting, while in water cooling
Solidification occurs while keeping liquid level while dropping to lower side in mold, and land and is finally solidified in lower mould side.Casting
Make in process, the keeping temperature of liquation, for example, 650~800 DEG C, can also more than 650 DEG C, less than 700 DEG C.Separately
Outside, the retention time of liquation is, for example, 0.5~2 hour, and casting temperature is, for example, 680~750 DEG C.Casting speed is, for example,
Semi-continuous casting is conducted batch-wise in 5~30mm/ minutes, each expected length.
In facing manufacturing procedure, the surface of ingot bar is subjected to facing and removed.In semi-continuous casting method,
With the side cooling meat of ingot bar, the space as resistance of heat transfer is produced between ingot bar and junker mold.Therefore, by semicontinuous casting
The ingot bar of method casting is made, along the side parallel with solidification direction, produces the uneven segregation layer such as thick particle, segregant.
If carrying out facing processing to ingot bar, such segregation layer and oxide scale film are removed, therefore the uniformity of metal structure
Improve, and can also prevent the generation of striped.The thickness removed by facing processing, for example, being 3~20mm per one side.
In the heat treatment step that homogenizes, ingot bar, which homogenize, to be heat-treated and improves the uniformity of metal structure.
Homogenize in heat treatment, keeping temperature is, for example, 500~550 DEG C, and the retention time is more than 2 hours.It is if such
Heat treatment condition, then Mg of segregation etc. can be made fully to be dissolved, and crystal grain can also be homogenized.
In hot-rolled process, so that such as 500 DEG C or so of temperature carries out rolling processing to ingot bar and obtains the hot rolling of banding
Plate.It is carried out typically while radiated by the contact with roll for hot rolling, on one side roughing thickness 500mm or so ingot bar repeatedly,
Until rolling rate approximately reaches 10% or so, and afterwards, finish to gauge to 2~4mm of thickness or so in one direction.Hot rolling is preferably from 490
DEG C terminate within the short time within 30 minutes to 400 DEG C of temperature field.In addition, the end temp of hot rolling be preferably 300 DEG C with
On.If rapidly terminating in the temperature field by 400 DEG C, precipitate etc. is difficult to produce, and the surface defect of plated film is reduced.Separately
Outside, if end temp is more than 300 DEG C Zuo You, the base before surface generation glide band damages grinding can be prevented
Body it is attractive in appearance.
In cold rolling process, for hot rolled plate so that such as less than 120 DEG C of temperature carries out rolling processing and obtains banding
Cold-reduced sheet.It carries out being typically to make hot rolled plate reach rolling rate substantially 40% or so for cold rolling, turns into 0.5~1.8mm of thickness or so.
, can also be as needed during cold rolling, implement intermediate annealing before rolling or in the way of rolling.The banding obtained by cold rolling
Aluminium alloy plate, web-like recovery is generally rolled into, carries out rip cutting processing in the direction of the width as needed, it is wide so as to cut into regulation
The banding of degree.
[base substrate]
Base substrate particularly controls the cooling speed in straightening annealing using the aluminium alloy plate with described chemical composition as former material
Spend and manufacture.Base substrate is made up of aluminium alloy plate, is overlooked as the discoid profile with holes with toroidal.The size of base substrate
For, such as relative to external diameter 95mm and internal diameter 25mm, or external diameter 65mm and internal diameter 20mm specified diameter, in inner circumferential side and periphery
Side is respectively along with 1mm or so end face allowance.
Base substrate is adjusted to foregoing chemical composition, by controlling the cooling velocity in straightening annealing, the Al- on surface
The absolute maximum length of (Ti, V, Zr) series intermetallic compound is less than 1 μm.Al- if (Ti, V, Zr) series intermetallic compound
Absolute maximum length be less than 1 μm, then in later process progress grinding and remove the table of 20 μm of left and right thicknesses
Layer, than it, bigger particle will not also expose on the surface of substrate substantially.In addition, in heat treatment afterwards, prevented also from crystalline substance
Grain is using the thick growth as core of this particle.It is therefore possible to prevent the particle of Al- (Ti, V, Zr) series intermetallic compound takes off from surface
Fall, or local cell formed between parent phase, turn into plated film surface defect will be because.Further, the use of absolute maximum length
Language, mean the maximum of the distance between arbitrary 2 points on the contour line of particle.
The absolute maximum length of Al- (Ti, V, Zr) series intermetallic compound and the presence density of particle, can be by aobvious
Micro mirror observation measurement.For example, by scanning electron microscope (Scanning Electron Microscope；SEM on)
It is connected with energy dispersion type x-ray analysis equipment (Energy Dispersive Spectroscopy；EDS SEM-EDS dresses)
Put, measure the surface of base substrate, obtain COMPO pictures.Then, graphical analysis can be carried out to COMPO pictures, by measuring Al-
Distance between any 2 points on contour line of (Ti, V, Zr) series intermetallic compound maximum and Al- (Ti,
V, Zr) series intermetallic compound particle quantity and try to achieve.Micro- sem observation can be carried out in the following way, i.e., for base
The surface of the interarea of body, with 1000 times of multiplying power, in measurement area 1mm2In at least carry out the observation in 100 visuals field.Particle is deposited
In density, such as by equivalent to area 1mm2Shooting in, carry out particle absolute maximum length meter measurement and particle
Counting and calculate.
Here, illustrated for one of the manufacture method of base substrate.In the manufacture method of base substrate, as master operation,
Formed including punching processing process and straightening annealing process., can be by with described change by implementing these processes in order
The aluminium alloy plate of the banding of composition is learned, manufactures discoid base substrate with holes.
In punching processing process, by aluminium alloy plate punching processing into leaving the with holes discoid of end face allowance.For example,
The aluminium alloy plate that will be sent out from milling train, after rewinding as needed, punching press is carried out with drift and punch die, reclaims discoid aluminium with holes
Alloy sheets (in the following description, are referred to as " base substrate ".).
In straightening annealing process, straightening annealing is implemented to the aluminium alloy plate Jing Guo punching processing.With with tabular surface
Dividing plate folder stacks every multiple discoid base substrates with holes, pressurizes in a thickness direction, thus one side load load is rectified while annealing
The just flatness of slightly crooked base substrate, and remove forming residual stress in a thickness direction.In straightening annealing, heating speed
Degree is, for example, 40~50 DEG C/h, and keeping temperature is, for example, 300~350 DEG C, and the retention time is, for example, 1~5 hour.Such as
Fruit keeping temperature is more than 300 DEG C, then the tissue extended in the rolling direction is difficult to remaining, therefore the bumps on the surface of base substrate subtract
It is few.In addition, if maintaining the temperature at less than 350 DEG C, then the excessive grain coarsening in parent phase can be avoided.In addition, aligning
In annealing, loading is, for example, 4g/mm2。
In straightening annealing process, during to warmed-up base substrate heat extraction, by the cooling speed of 300 DEG C to 200 DEG C of temperature province
Degree control is carried out more than 50 DEG C/h.If the base substrate of heating is cooled to 30 DEG C/h or so of in general cooling velocity
250 DEG C or so, then from the Ti included equivalent to addition, V, Zr start to separate out Al- (Ti, V, Zr) series intermetallic compound.Cause
This, occurs the thick particle more than 3~5 μm of sizes, and the flatness on the surface of plated film is damaged.If cooling velocity 50 DEG C/
More than hour, then base substrate be cooled to 250 DEG C or so it is following when, the precipitation of Al- (Ti, V, Zr) series intermetallic compound without,
Particle thick will not grow, therefore can make Al- (Ti, V, Zr) series intermetallic compound that absolute maximum length is more than 1 μm
The presence density of particle be 0/mm2.From the viewpoint of the flatness deterioration for avoiding causing because of thermal contraction base substrate, from 300
DEG C to 200 DEG C of temperature province cooling velocity, preferably less than 180 DEG C/h, more into electing less than 160 DEG C/h as.
Cooling in straightening annealing process can be carried out by air cooling.In general, if being put after base substrate is kept under heating
Cold, then cooling velocity is 30 DEG C/h or so.If in contrast, for example, after base substrate is kept under heating, rapidly move
Deliver under normal temperature (25 DEG C), forced air-cooling carried out using air blower and ventilating fan, or be transferred to appropriateness it is cold in a low temperature of air cooling, then
Cooling velocity can be made to reach more than 50 DEG C/h.If air cooling, then will not occur significantly to send out with difference, base substrates such as water coolings
Heat deforms or corrosion, therefore can appropriately ensure the quality of base substrate.
[substrate]
Substrate is using the aluminium alloy plate with described chemical composition as former material, for the base substrate that is obtained by aluminium alloy plate
Surface is processed and manufactured.Substrate is made up of aluminium alloy plate, has the interarea of the low smoothing of surface roughness.Substrate is for example
Center line average roughness Ra75For less than 0.001 μm.Further, center line average roughness is based on JIS B 0601：2013 annex
The definition of JB defineds.
Substrate is fabricated to Al- (Ti, V, the Zr) series intermetallic compound on surface by being processed to described base substrate
Absolute maximum length below 1 μm state.The absolute maximum length of Al- (Ti, V, Zr) series intermetallic compound, from base substrate
Surface to depth 20 μm or so be same degree.Therefore, in substrate obtained from somewhat removing the top layer of base substrate, surface
The absolute maximum length of Al- (Ti, V, Zr) series intermetallic compound is also about less than 1 μm.
Here, illustrated for one of the manufacture method of substrate.In the manufacture method of substrate, as master operation,
Formed including end face manufacturing procedure and grinding process., can be by with described change by implementing these processes in order
The discoid base substrate with holes of composition is learned, manufactures the substrate of surface smoothing.
In the manufacturing procedure of end face, processing removes the inner circumferential side in discoid base substrate with holes and the end face of outer circumferential side.It is logical
Cross and machining, grinding etc. are carried out to the end face of base substrate, end face allowance can be removed, obtain the base with specified diameter
Body.
In grinding process, grinding is carried out to implementing the interarea of base substrate of end face processing.For example, by end face
The base substrate that allowance is removed is housed in the bag of carrier, using the milling drum for being provided with grinding stone, while flowing cooling agent one
While surface is pruned until reaching specific thickness.In grinding, for example, using the micro mist of No. #3000 to No. 4000 or so
Grinding stone, 10~20 μm or so of surface is removed per one side, surface roughness is tens of below nm, and smoothing is extremelyLeft and right.Through base substrate obtained from grinding, the furnace annealing below 300 DEG C as needed,
The substrate that the smooth surface with the substrate as disk can be obtained (is referred to as " grinding substrate ".).
[surface treatment]
The substrate with smooth surface obtained by the aluminium alloy plate with described chemical composition, in the manufacture of disk
During, film forming has the plated film as magnetospheric substrate.Plated film with chemical Ni-P plating for substrate by being carried out at surface
Manage and formed.
Here, illustrated for one of the manufacture method of the substrate with plated film.The manufacture of substrate with plated film
In method, in order including ungrease treatment process, etching process process, desmut treatment process, zincate treatment process, plating
Treatment process, milled processed process and form.In zincate treatment process, as described below, preferably include first in order
Zincate treatment process, nitric acid lift-off processing process, the second zincate treatment process and the dual zincic acid salt treatment formed.
In ungrease treatment process, the oil on the surface for being attached to substrate is removed with degreasing agent.As degreasing agent, for example,
The alkali such as sodium hydroxide and the decoction containing surfactant etc. can be enumerated.The temperature of ungrease treatment is, for example, 30~70 DEG C, processing
Time is, for example, 3~7 minutes.
In etching process process, the oxide scale film on the surface of substrate is removed with etching solution.As etching solution, such as can arrange
Lift the alkali such as acid or the sodium hydroxide of sulfuric acid etc., the decoction containing surfactant and complexing agent etc..The method preferably etched, it is
The easily alloying component contained by dissolving aluminium alloy plate, in addition, the good acid etching in the surface of substrate can be made.
In etching process process, aluminium alloy can also be hardly being corroded, only remove the temperature of this degree of oxide scale film
Carried out with conditions of.As etching solution used in such soft etching process, for example, C. Uyemura ＆ Co Ltd can be enumerated
Soft etchant " AD-101F " of system etc..Substrate is because by the adjustment of chemical composition, the current potential of parent phase and intermetallic compound
Difference is reduced, therefore even if when carrying out soft etching process, intermetallic compound is also difficult to residue.Therefore, can either reduce due to
The surface defect that the formation phase of local cell rises, and can enough suppress etch damage.
Soft etching process, such as can be with 68~72 DEG C of processing for implementing 2~4 minutes, and the places with 50 DEG C of implementation 5 minutes
The suitable treatment conditions of reason etc. are carried out.If such condition, then the intermetallic compound that can make to be present in surface
Particle fully dissolves, and can prevent surface defect caused by the particle as.Further, as only removing this journey of oxide scale film
The gentle condition of degree, specifically, it is comparable to external diameter 95mm, internal diameter 25mm, thickness 1.0mm each substrate, decrement 5~
15mg or so condition.
In desmut treatment process, the dirt on the surface of substrate is removed with acid.As acid, for example, can enumerate dilute sulfuric acid,
Nitric acid, hydrofluoric acid etc..The dirt that the residue of oxide epithelium caused by because of etching process, the alloying component etc. of dissolution are formed
Thing, it is dissolved in acid and is removed.
In the first zincate treatment process, handle the surface of substrate with zincic acid saline solution and separate out zinc.As zincate
Liquid, for example, the solution containing zinc oxide, sodium hydroxide, iron chloride etc. can be enumerated.The temperature of first zincic acid salt treatment is, for example, 20
~25 DEG C, processing time is, for example, 15~60 seconds.
In nitric acid lift-off processing process, the epithelium in the zinc of the surface of substrate precipitation is peeled off.With nitric acid for through first
The substrate of zincic acid salt treatment is handled, thus, the zinc separated out by the first zincic acid salt treatment it is more than half, residual is as separating out
Point a part zinc and be first dissolved.
In the second zincate treatment process, carried out for the surface of the substrate through pernitric acid lift-off processing with zincic acid saline solution
Handle and zinc is separated out again.The temperature of second zincic acid salt treatment, for example, 20~25 DEG C, processing time, for example, 15~60 seconds,
Can be shorter than the first zincic acid salt treatment.By carrying out zincic acid salt treatment once again to the substrate through pernitric acid lift-off processing, remain in
The zinc on the surface of substrate turns into new precipitation starting point, can form that uniformity is higher, the epithelium of flat and fine and close zinc.
In plating process, chemical Ni-P plating is implemented to the surface of substrate.As the plating for chemical Ni-P plating
Liquid, for example, the solution containing nickel sulfate, sodium hypophosphite, surfactant, complexing agent etc. can be enumerated.Specifically, can enumerate
Nonmagnetic plating solution " ニ system デ Application (registration mark) HDX " etc. of Industrial Co., Ltd of village.The thickness of the plated film of formation, such as
For 5~20 μm or so.In substrate, the potential difference of parent phase and intermetallic compound is reduced, and intermetallic compound is difficult to remain
Remaining, the rolled tin film obtained by zincic acid salt treatment is formed with flat and fine and close state.Therefore, plated film is difficult to surface defect occurs,
The film forming with the high adhesion amount presentation of face direction uniformity smooth surface.
In milled processed process, it is ground to being formed at the surface of plated film of substrate.Grinding is passed through on the surface of plated film,
The surface defect of shallow pit and small dross etc. caused by particle of the absolute maximum length less than 1 μm or so is planarized,
The substrate of the disk on the surface for having height smooth can be obtained.On the substrate of disk, it then follows conventional method, pass through sputtering etc.
It is laminated with containing the magnetosphere (magnetic film) based on Co, Cr, Pt etc. magnet, the protective layer based on carbon, containing complete
Lubricating layer of perfluoroalkyl polyether etc. etc., so as to obtain disk that can be by magnetic to record and read information.
【Embodiment】
Hereinafter, embodiments of the invention are shown, are specifically illustrated for the present invention.But technology of the invention
Scope is not limited by it.
Using the different aluminium alloy of chemical composition, by following step, the examination of the substrate of No.1~29 is made respectively
Test product.First, parent metal and intermediate alloy of the dissolving containing defined chemical composition, respectively casting have shown in table 1 below
Chemical composition ingot bar.Then, after carrying out facing processing to ingot bar, implemented with 540 DEG C at the heat that homogenizes of 8 hours
Reason.Then, after the hot rolled plate for turning into thick 3mm to ingot bar progress hot rolling, cold rolling processing is carried out to the hot rolled plate and obtained
Thick 1.0mm cold-reduced sheet.
Then, the cold-reduced sheet that will be obtained, punching processing is with holes discoid into external diameter 96mm and internal diameter 24mm's, and every 20 are entered
Row stacks and implements straightening annealing, thus obtains base substrate.In straightening annealing, it is 320 DEG C to make keeping temperature, and the retention time is 3 small
When, after heating and keeping, the cooling velocity of 300 DEG C to 200 DEG C of temperature field is cooled down for the cooling velocity shown in table 1 below
Each trial target.
Then, end face processing is carried out for obtained base substrate, removes the end face 1mm of inner circumferential side and outer circumferential side respectively, then,
Substrate is obtained by implementing grinding.Further, in grinding, the special " PVA for grinding whetstone Co. Ltd. system of Japan is used
Grinding stone (No. 4000) ", 10 μm of top layer is removed per one side.
Next, carried out for resulting substrate using the alkaline cleaner " AD-68F " of C. Uyemura ＆ Co Ltd
Ungrease treatment, then using the soft etchant " AD-101F " of C. Uyemura ＆ Co Ltd, with 68 DEG C of acid etchings for carrying out 2 minutes
After quarter processing, desmut processing is carried out using 30% salpeter solution.Then, replaced using the zinc of C. Uyemura ＆ Co Ltd
Agent " AD-301F-3X ", after carrying out 30 seconds the first zincic acid salt treatment with 20 DEG C, nitric acid is carried out using 30% salpeter solution
Lift-off processing, using same zinc displacer, with 20 DEG C of progress, 15 seconds the second zincic acid salt treatment.
Then, for the substrate Jing Guo zincic acid salt treatment, " ニ system デ is used using the plating solution of C. Uyemura ＆ Co Ltd
Application (registration mark) HDX ", with 90 DEG C of platings for implementing 2 hours, the plated film of 10 μm or so of thickness of formation.Thereafter, for plating
The surface of film, use slurry " the DISKLITE Z5601A ", with カ ネ ボ ウ strain formula meetings of the colloidal silica silicon systems of Off ジ ミ societies
" N0058 72D " are ground the grinding pad of society's system (existing ア イ オ Application society system), thus obtain the substrate of disk.
In process more than, for through base substrate obtained from straightening annealing, going out to remove 20 μm of left sides by grinding
After the top layer of right thickness, the maximum of the absolute maximum length of Al- (Ti, V, the Zr) series intermetallic compound on surface is measured
Value and absolute maximum length be more than 1 μm Al- (Ti, V, Zr) series intermetallic compound presence density.In addition, to pass through
Cold-reduced sheet obtained from cold rolling processing is used as the yield strength for for examination material, measuring aluminium alloy plate.In addition, for implementing chemical plating
There is the substrate of plated film obtained from Ni-P, evaluate the flatness on the surface of plated film.Measure and that evaluates comprises the following steps that.
(yield strength)
Yield strength is tried to achieve in the following way, for cold-reduced sheet obtained from being processed through cold rolling, with the making with base substrate
When same condition carry out straightening annealing after, carry out tension test with the test film extracted from the cold-reduced sheet.Further, stretching examination
Test, the extraction of test film etc., according to JIS Z 2241：The method of 2011 defineds is carried out.Use of the yield strength value based on disk
On the way, more than 90MPa can determine that to be qualified, be can determine that less than 90MPa to be unqualified.
(Al- (Ti, V, Zr) series intermetallic compound)
The absolute maximum length and population of Al- (Ti, V, Zr) series intermetallic compound, pass through SEM-EDS device meters
Survey the grinding surface of substrate and try to achieve.Specifically, with the 1mm of the grinding surface of 1000 times of shooting substrates of multiplying power2, obtain meter 100
The COMPO pictures in the visual field.Then, in each COMPO pictures, intermetallic compound that Ti, V or Zr high concentration are gathered be considered as Al- (Ti,
V, Zr) series intermetallic compound particle, using the maximum of the distance between any 2 points on contour line of the particle as definitely
Maximum length, its maximum is tried to achieve, and the number of particle of the absolute maximum length more than 1 μm is counted in whole visuals field,
Thus try to achieve and density be present.Further, as SEM, using " JSM-7001F " of Jeol Ltd., as EDS, make
With " JED-2300 " of Jeol Ltd., as particle analysis software, Jeol Ltd. is used
" EX-35110 ".
(plated film)
The flatness on the surface of plated film, is the surface roughness of the plated film on the surface that measurement is formed at substrate, and analysis whether there is
Defined surface defect and evaluated.Further, the measurement of surface roughness, Block ル カ ー エ イ エ ッ Network ス エ ス are used
Co. Ltd. system non-contact 3-D interference of light roughmeter " ContourGT X3 ", with object lens × 10, the angle of visual field (FOV) ×
1, vertical scanning interferometric method (VSI) pattern is carried out.As surface defect, wide more than 5 μm of pit and wide more than 5 μm is detected the presence of
Dross, the judgement unconfirmed arrived is qualified (◎ or zero), and the judgement confirmed is unqualified (×).
On each trial target of No.1~29, its chemical composition, the cooling velocity of straightening annealing, surface Al- (Ti, V,
Zr) maximum of the absolute maximum length of series intermetallic compound, the Al- (Ti, V, Zr) that absolute maximum length is more than 1 μm
The evaluation of flatness on surface of the presence density of series intermetallic compound, the measurement result of yield strength, plated film is shown respectively
In following table 1.Further, the "-" in the column of chemical composition one, expression is not add chemical composition, below detectable limit
Content.In addition, the "○" in the evaluation of flatness, even if expression Mg is improperly content, or do not add Cu, Zn, or not
Suitable for the content of zincic acid salt treatment etc., the surface of aluminium alloy plate is also smooth, unconfirmed to defined pit and dross.In addition,
" ◎ " is represented due to Cu, Zn of appropriate content, and unconfirmed to defined pit and dross.
In addition, the underscore in table 1, the important document of the foot present invention with thumb down.
【Table 1】
As shown in table 1, the substrate of No.1~17, the chemical composition of the aluminium alloy plate used as former material are appropriately controlled
System, the absolute maximum length of Al- (Ti, V, the Zr) series intermetallic compound on surface is below 1 μm.Therefore, it is formed at substrate
Big surface defect does not occur for the plated film on surface, can form the plated film on the smooth surface of purposes suitable for disk.
In contrast, No.18 substrate, because not containing sufficient Mg, required by the purposes that cannot get disk
Yield strength.In addition, No.19 substrate, because the Mg containing surplus, occurs rolling in the stage for carrying out hot rolling and splits
Line, it is impossible to manufactured.
In addition, No.20 and 21 substrate, deep pit occurs because Cu or Zn that addition is superfluous, during etching process,
The surface roughness of aluminium alloy plate becomes big.Surface defect also occurs for the plated film for being as a result formed at the surface of substrate, can not be formed
The plated film on smooth surface.
In addition, the substrate of No.22~24 because Ti and V and Zr that addition is superfluous, absolute maximum length be 1 μm with
On Al- (Ti, V, Zr) series intermetallic compound presence density it is high.Therefore, the particle of coarsening comes off, or etching process
Pit deep Shi Fasheng, the surface roughness of aluminium alloy plate become big.As a result, it is formed at the plated film on the surface of substrate also generation table
Planar defect, the plated film on smooth surface can not be formed.
In addition, the substrate of No.25~28, because being added with Ti, V or Zr, and its total amount is superfluous, so absolute maximum is grown
The presence density of Al- (Ti, V, the Zr) series intermetallic compound spent more than 1 μm is high.Therefore, the particle of coarsening comes off, or
Deep pit occurs during etching process, the surface roughness of aluminium alloy plate becomes big.As a result, it is formed at the plating on the surface of substrate
Surface defect also occurs for film, can not form the plated film on smooth surface.
In addition, No.29 substrate is added with Ti, V and Zr with No.15 substrate equivalent, although its total amount is few,
Cooling velocity in straightening annealing is excessively slow, therefore Al- (Ti, V, Zr) of the absolute maximum length more than 1 μm is intermetallic
The presence density of thing is high.Therefore, the particle of coarsening comes off, or deep pit, the surface of aluminium alloy plate occur during etching process
Roughness is big.As a result, surface defect also occurs for the plated film for being formed at the surface of substrate, the plating on smooth surface can not be formed
Film.
The substrate of particularly No.2,6~13,15,17, because being added with Cu, Zn, its content is appropriate, so plated film is difficult to
Generation surface defect, the plated film on the good smooth surface of uniformity and adhesion can be formed.In contrast, No.3 substrate
Although being added with Cu and Zn, its content is very few, so the uniformity of the epithelium of the zinc formed by zincic acid salt treatment is low.Therefore,
In chemical composition containing Cu and Zn, if carrying out the content of these elements and appropriateization of condition of zincic acid salt treatment etc.,
Can say can form the plated film on smooth surface.
Claims (3)
1. a kind of disk aluminium alloy base substrate, wherein, contain
Mg：3.5~6.2 mass %,
And meeting Ti：0.0005~0.0020 mass %, V：0.0005~0.0020 mass %, Zr：0.0002~0.0020
Quality % and relational expression：At least one of in the range of the mass % of Ti+V+Zr≤0.0020, containing Ti, V and Zr,
Surplus is made up of Al and inevitable impurity,
The absolute maximum length of Al- (Ti, V, the Zr) series intermetallic compound on surface is less than 1 μm.
2. disk according to claim 1 aluminium alloy base substrate, wherein, with Cu：0.010~0.200 mass %, Zn：
At least one of 0.05~0.50 mass % scope, also containing Cu and Zn.
3. a kind of disk aluminium alloy substrate, it is as the aluminium alloy base substrate structure of the disk described in claim 1 or claim 2
Into.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016-195744 | 2016-10-03 | ||
| JP2016195744 | 2016-10-03 | ||
| JP2017086598A JP2018059180A (en) | 2016-10-03 | 2017-04-25 | Aluminum alloy blank for magnetic disk and aluminum alloy substrate for magnetic disk |
| JP2017-086598 | 2017-04-25 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107893179A true CN107893179A (en) | 2018-04-10 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710883609.1A Pending CN107893179A (en) | 2016-10-03 | 2017-09-26 | Disk aluminium alloy base substrate and disk aluminium alloy substrate |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113614264A (en) * | 2019-03-14 | 2021-11-05 | 株式会社神户制钢所 | Aluminum alloy blank for magnetic disk and aluminum alloy substrate for magnetic disk |
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|---|---|---|---|---|
| JP2009242843A (en) * | 2008-03-31 | 2009-10-22 | Kobe Steel Ltd | Aluminum alloy substrate for magnetic disk and method for producing the same |
| CN105745344A (en) * | 2014-09-27 | 2016-07-06 | 株式会社Uacj | Aluminum alloy plate for magnetic disc substrate, method for manufacturing same, and method for manufacturing magnetic disc |
| CN105803273A (en) * | 2015-01-16 | 2016-07-27 | 株式会社神户制钢所 | Aluminium alloy plate for magnetic disc, aluminium alloy blank body for magnetic disc and aluminium alloy substrate for magnetic disc |
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2017
- 2017-09-26 CN CN201710883609.1A patent/CN107893179A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009242843A (en) * | 2008-03-31 | 2009-10-22 | Kobe Steel Ltd | Aluminum alloy substrate for magnetic disk and method for producing the same |
| CN105745344A (en) * | 2014-09-27 | 2016-07-06 | 株式会社Uacj | Aluminum alloy plate for magnetic disc substrate, method for manufacturing same, and method for manufacturing magnetic disc |
| CN105803273A (en) * | 2015-01-16 | 2016-07-27 | 株式会社神户制钢所 | Aluminium alloy plate for magnetic disc, aluminium alloy blank body for magnetic disc and aluminium alloy substrate for magnetic disc |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113614264A (en) * | 2019-03-14 | 2021-11-05 | 株式会社神户制钢所 | Aluminum alloy blank for magnetic disk and aluminum alloy substrate for magnetic disk |
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Application publication date: 20180410 |