CN107887791A - 一种实现量子阱无序化的扩散加工方法 - Google Patents
一种实现量子阱无序化的扩散加工方法 Download PDFInfo
- Publication number
- CN107887791A CN107887791A CN201711111150.XA CN201711111150A CN107887791A CN 107887791 A CN107887791 A CN 107887791A CN 201711111150 A CN201711111150 A CN 201711111150A CN 107887791 A CN107887791 A CN 107887791A
- Authority
- CN
- China
- Prior art keywords
- diffusion
- disordering
- growth thickness
- sqw
- realizing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
Abstract
Description
Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201711111150.XA CN107887791B (zh) | 2017-11-13 | 2017-11-13 | 一种实现量子阱无序化的扩散加工方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201711111150.XA CN107887791B (zh) | 2017-11-13 | 2017-11-13 | 一种实现量子阱无序化的扩散加工方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN107887791A true CN107887791A (zh) | 2018-04-06 |
CN107887791B CN107887791B (zh) | 2020-01-14 |
Family
ID=61780075
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201711111150.XA Active CN107887791B (zh) | 2017-11-13 | 2017-11-13 | 一种实现量子阱无序化的扩散加工方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN107887791B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109921277A (zh) * | 2019-04-10 | 2019-06-21 | 苏州长光华芯光电技术有限公司 | 消除半导体激光器comd的方法及半导体激光器 |
CN110086080A (zh) * | 2019-04-12 | 2019-08-02 | 苏州长光华芯光电技术有限公司 | 半导体激光器非吸收窗口及其制备方法和半导体激光器 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030219994A1 (en) * | 2002-01-22 | 2003-11-27 | Goodhue William D. | Method of fabrication for III-V semiconductor surface passivation |
CN1877935A (zh) * | 2005-06-09 | 2006-12-13 | 中国科学院半导体研究所 | 一种适合于大批量生产的激光器cod消除方法 |
CN1941526A (zh) * | 2005-09-29 | 2007-04-04 | 三洋电机株式会社 | 半导体激光元件和其制造方法 |
CN101114757A (zh) * | 2006-07-28 | 2008-01-30 | 中国科学院半导体研究所 | 大功率650nm量子阱半导体激光器及其制作方法 |
CN101533991A (zh) * | 2008-03-14 | 2009-09-16 | 松下电器产业株式会社 | 双波长半导体激光器装置 |
-
2017
- 2017-11-13 CN CN201711111150.XA patent/CN107887791B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030219994A1 (en) * | 2002-01-22 | 2003-11-27 | Goodhue William D. | Method of fabrication for III-V semiconductor surface passivation |
CN1877935A (zh) * | 2005-06-09 | 2006-12-13 | 中国科学院半导体研究所 | 一种适合于大批量生产的激光器cod消除方法 |
CN1941526A (zh) * | 2005-09-29 | 2007-04-04 | 三洋电机株式会社 | 半导体激光元件和其制造方法 |
CN101114757A (zh) * | 2006-07-28 | 2008-01-30 | 中国科学院半导体研究所 | 大功率650nm量子阱半导体激光器及其制作方法 |
CN101533991A (zh) * | 2008-03-14 | 2009-09-16 | 松下电器产业株式会社 | 双波长半导体激光器装置 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109921277A (zh) * | 2019-04-10 | 2019-06-21 | 苏州长光华芯光电技术有限公司 | 消除半导体激光器comd的方法及半导体激光器 |
CN110086080A (zh) * | 2019-04-12 | 2019-08-02 | 苏州长光华芯光电技术有限公司 | 半导体激光器非吸收窗口及其制备方法和半导体激光器 |
CN110086080B (zh) * | 2019-04-12 | 2020-04-10 | 苏州长光华芯光电技术有限公司 | 半导体激光器非吸收窗口及其制备方法和半导体激光器 |
Also Published As
Publication number | Publication date |
---|---|
CN107887791B (zh) | 2020-01-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6812152B2 (en) | Method to obtain contamination free laser mirrors and passivation of these | |
JP2000307199A (ja) | 非対称導波路窒化物レーザダイオード構造、並びに形成方法及び製造方法 | |
JP2007184353A (ja) | 窒化物系化合物半導体素子の製造方法、および、窒化物系化合物半導体素子 | |
JP2005064328A (ja) | 半導体レーザおよびその製造方法 | |
US7720124B2 (en) | Semiconductor device and fabrication method thereof | |
CN107887791A (zh) | 一种实现量子阱无序化的扩散加工方法 | |
US6703254B2 (en) | Method for manufacturing semiconductor laser device | |
US9401404B2 (en) | Semiconductor device and fabrication method | |
CN111937261B (zh) | 半导体发光元件 | |
US7320898B2 (en) | Semiconductor laser device and method for fabricating the same | |
WO2021098828A1 (zh) | 激光器芯片制备方法和激光器 | |
JP2005525704A (ja) | 光半導体素子のミラー型表面の不動態化方法 | |
JP2013168620A (ja) | 半導体レーザの製造方法 | |
JP2010245465A (ja) | 窒化物系半導体レーザ及びその製造方法 | |
Han et al. | Characteristics of Multi‐Quantum‐Well Laser Diodes with Surface Electrode Structure Directly Bonded to InP Template on SiO2/Si Substrate | |
CN114389152B (zh) | 一种半导体激光器的外延生长方法 | |
CN108110617A (zh) | 一种基于双元素相互扩散制作半导体激光器腔面结构的方法 | |
CN115021080B (zh) | 一种GaN基激光器非吸收腔面结构的制备方法 | |
JP7080414B1 (ja) | 光半導体素子及びその製造方法 | |
JP2012238679A (ja) | 半導体レーザ素子及びその製造方法 | |
JP2011114017A (ja) | 窒化物半導体装置の製造方法 | |
US6643307B2 (en) | Semiconductor laser device | |
Bulaev et al. | MOCVD-grown InGaAs/GaAs/AlGaAs laser structures with a broad-area contact | |
JP2008078246A (ja) | 半導体レーザ素子およびその製造方法 | |
CN115189223A (zh) | 一种半导体激光器及其制备方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CB03 | Change of inventor or designer information |
Inventor after: Zhang Peng Inventor after: Wang Jun Inventor before: Zhang Peng |
|
CB03 | Change of inventor or designer information | ||
CP03 | Change of name, title or address |
Address after: 215163 No.2 workshop-1-102, No.2 workshop-2-203, zone a, industrial square, science and Technology City, No.189 Kunlunshan Road, high tech Zone, Suzhou City, Jiangsu Province Patentee after: Suzhou Changguang Huaxin Optoelectronic Technology Co.,Ltd. Address before: 215163 No.2 factory building, No.189 Kunlunshan Road, high tech Zone, Suzhou City, Jiangsu Province Patentee before: SUZHOU EVERBRIGHT PHOTONICS TECHNOLOGY Co.,Ltd. |
|
CP03 | Change of name, title or address |