CN107887401A - Back side illumination image sensor and its manufacture method - Google Patents
Back side illumination image sensor and its manufacture method Download PDFInfo
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- CN107887401A CN107887401A CN201711056829.3A CN201711056829A CN107887401A CN 107887401 A CN107887401 A CN 107887401A CN 201711056829 A CN201711056829 A CN 201711056829A CN 107887401 A CN107887401 A CN 107887401A
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- 238000005286 illumination Methods 0.000 title claims abstract description 81
- 238000000034 method Methods 0.000 title claims abstract description 53
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 27
- 229910052751 metal Inorganic materials 0.000 claims abstract description 228
- 239000002184 metal Substances 0.000 claims abstract description 228
- 238000000605 extraction Methods 0.000 claims abstract description 65
- 230000008569 process Effects 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 238000001259 photo etching Methods 0.000 claims abstract description 10
- 230000005611 electricity Effects 0.000 claims abstract description 8
- 238000003384 imaging method Methods 0.000 claims abstract description 6
- 239000004411 aluminium Substances 0.000 claims description 29
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 29
- 229910052782 aluminium Inorganic materials 0.000 claims description 29
- 239000000463 material Substances 0.000 claims description 29
- 239000010949 copper Substances 0.000 claims description 24
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 18
- 229910052802 copper Inorganic materials 0.000 claims description 18
- 238000000926 separation method Methods 0.000 claims description 18
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 14
- 229910052721 tungsten Inorganic materials 0.000 claims description 14
- 239000010937 tungsten Substances 0.000 claims description 14
- 238000005516 engineering process Methods 0.000 claims description 12
- 239000010936 titanium Substances 0.000 claims description 12
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 6
- 238000001704 evaporation Methods 0.000 claims description 6
- 230000008020 evaporation Effects 0.000 claims description 6
- 238000003475 lamination Methods 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 238000003892 spreading Methods 0.000 claims 1
- 238000002360 preparation method Methods 0.000 description 5
- 238000010276 construction Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000003487 electrochemical reaction Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000004026 adhesive bonding Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
The present invention provides a kind of back side illumination image sensor and its manufacture method, including:Support substrate;Wiring layer, including metal wiring layer and the dielectric layer for surrounding the metal wiring layer, the metal wiring layer include the extraction metal level for being used for the interconnecting metal layer of imaging sensor interconnection and being drawn for electricity;Metal closures, including the interconnection metal closures being connected with the interconnecting metal layer, and the extraction metal closures being connected with the extraction metal level;Back side illumination image sensor chip, its positive circuit are electrically connected with by the interconnection metal closures with the interconnecting metal layer;Groove, being formed in the back side illumination image sensor chip and exposing has the extraction metal closures;And metal gasket, it is formed in the groove and is electrically connected with the extraction metal closures.The present invention need to can only realize the electrical extraction of back side illumination image sensor chip by a photoetching process, and present invention process is fairly simple, can substantially reduce manufacturing cost.
Description
Technical field
The invention belongs to field of semiconductor manufacture, more particularly to a kind of back side illumination image sensor and its manufacture method.
Background technology
In the positive illuminated structures of traditional FSI, photon, which wants arrival photodiode, to be needed through insulating barrier and metal level,
During this, partial photonic can be rebounded by insulating barrier and metal layer reflection in air, cause the reduction of image sensor sensitivity.The back of the body
It is the structural change of element internal in place of the maximum optimization of illuminated image sensor, back-illuminated image is by the element of photosensitive layer
Direction is turned, allowing luminous energy, direct projection is entered from the back side, is avoided in conventional image sensor structure, light can be by lenticule and light
The influence of circuit and transistor between electric diode, so as to significantly improve the efficiency of light, substantially improve under low-light conditions
Photosensitive effect, it is seen then that back side illumination image sensor has qualitative leap than conventional image sensor in sensitivity meeting.
Existing most of back side illumination image sensor is mainly connected polysilicon gate and aluminium pad by silicon chip passage (TSV)
Pick up and, but TSV and polysilicon gate contact resistance are larger.Technology that the aluminium that presently, there are pads and metal layer copper is directly in contact,
Preparation technology is complicated, and cost of manufacture is high.
The new back side illumination image sensor that currently exists as shown in figure 1, the characteristics of its is main be aluminium pad 104 with
Metal layer copper 101 is directly in contact.Its preparation method is by first time photo etching process that back side illumination image sensor is brilliant
Round substrate opens the first groove, and one layer of separation layer is deposited in first groove;Existed again by second of photo etching process
Second groove is formed on the bottom of the first groove, and second groove is terminated on metal level, and redeposited one layer of separation layer;Finally sink
The metallic aluminium that product is connected with the metal layer copper, form aluminium pad.Such a technique needs twice photoetching process, and its cost is higher.
Based on described above, there is provided a kind of back-illuminated type figure that can effectively reduce technology difficulty and effectively reduce manufacturing cost
As sensor and its manufacture method are necessary.
The content of the invention
In view of the above the shortcomings that prior art, it is an object of the invention to provide a kind of back side illumination image sensor and
Its manufacture method, it is complicated for solving the aluminium of back side illumination image sensor in the prior art pad manufacturing process, process costs compared with
The problem of high.
In order to achieve the above objects and other related objects, the present invention provides a kind of manufacturer of back side illumination image sensor
Method, the manufacture method include:1) a back side illumination image sensor chip is provided, in the back side illumination image sensor chip list
Face forms metal closures and wiring layer, and the wiring layer includes being used for the interconnecting metal layer of imaging sensor interconnection and for electricity
The extraction metal level of extraction, the metal closures include the interconnection metal closures being connected with the interconnecting metal layer, and draw with described
Go out the connected extraction metal closures of metal level, wherein, the circuit of the back side illumination image sensor chip front side passes through the interconnection
Metal closures are electrically connected with the interconnecting metal layer;2) support substrate is provided, the support substrate is fixed on the wiring
Layer surface;3) groove for exposing the extraction metal closures is formed in the back side illumination image sensor chip;And 4) in institute
The metal gasket for being formed in groove and being electrically connected with the extraction metal closures is stated, to realize the electrical of the back side illumination image sensor
Draw.
Preferably, the preparation method of the metal closures includes step:A) in shape on the back side illumination image sensor chip
Into dielectric layer;B) the of the circuit extraction for the back side illumination image sensor chip front side is opened from the dielectric layer surface
One perforate and the second perforate for being subsequently used for the back side illumination image sensor chip back extraction;And c) in described
Metal is filled in one perforate and the second perforate, to form the interconnection metal closures and the extraction metal closures.
Preferably, in step 3), using photoetching process and dry etch process in the back side illumination image sensor chip
The groove of the extraction metal closures is exposed in middle formation.
Preferably, step 4) includes step:4-1) using sputtering technology or evaporation process in the bottom of the groove, side wall
And separation layer is formed on top, to prevent the metal of the metal gasket from spread and improve gluing for the metal gasket and the groove
Attached intensity;And 4-2) using sputtering technology or evaporation process in forming metal gasket on the separation layer.
Further, the material selection of the separation layer is titanium/titanium nitride (Ti/TiN) lamination, the material of the metal gasket
It is aluminium (Al) that material, which is selected,.
Preferably, the interconnecting metal layer and the material selection for drawing metal level are copper (Cu), the interconnection metal
Plug and the material selection for drawing metal closures are tungsten (W).
The present invention also provides a kind of back side illumination image sensor, including:Support substrate;Wiring layer, it is formed at the support
On substrate, the wiring layer includes metal wiring layer and surrounds the dielectric layer of the metal wiring layer, the metal wiring layer
Including the interconnecting metal layer interconnected for imaging sensor and the extraction metal level drawn for electricity;Metal closures, it is formed at institute
In the dielectric layer for stating wiring layer, the metal closures include the interconnection metal closures that are connected with the interconnecting metal layer, and with it is described
Draw the connected extraction metal closures of metal level;Back side illumination image sensor chip, it is fixed on the wiring layer, the back-illuminated type
The positive circuit of image sensor chip is electrically connected with by the interconnection metal closures with the interconnecting metal layer;Groove, formed
In the back side illumination image sensor chip and expose and there are the extraction metal closures;And metal gasket, it is formed at described recessed
Electrically connected in groove and with the extraction metal closures, to realize the electrical extraction of the back side illumination image sensor.
Preferably, the metal closures include:From dielectric layer surface opening until the first of the interconnecting metal layer
Perforate and until the second perforate of the extraction metal level;In the interconnection metal that first perforate filling metal is formed
Plug;And fill metal in second perforate and form the extraction metal closures.
Preferably, also there is separation layer, to prevent the gold of the metal gasket between the metal gasket and the groove
Category spreads and improves the adhesion strength of the metal gasket and the groove.
Further, the material selection of the separation layer is titanium/titanium nitride (Ti/TiN) lamination, the material of the metal gasket
It is aluminium (Al) that material, which is selected,.
Preferably, the interconnecting metal layer and the material selection for drawing metal level are copper (Cu), the interconnection metal
Plug and the material selection for drawing metal closures are tungsten (W).
As described above, the back side illumination image sensor and its manufacture method of the present invention, have the advantages that:
The present invention by making tungsten plug on the extraction metal level of wiring layer, then by a photo etching process from
The substrate of back side illumination image sensor chip opens fairlead, and makes aluminium pad in the fairlead, and aluminium pad passes through tungsten plug
It is connected with drawing metal level, the electrical extraction of back side illumination image sensor chip can be realized.The present invention only need to pass through once light
Carving technology can realize the electrical extraction of back side illumination image sensor chip, and present invention process is fairly simple, can substantially reduce system
Cause this.Meanwhile the present invention pads the connection with tungsten plug using aluminium, compared to traditional aluminium pad and the side being connected between layers of copper
Method, can avoid aluminium and copper contact interface due to the defects of contact resistance caused by electrochemical reaction increases, so as to effectively reduce
The resistance of connecting line construction.
Brief description of the drawings
Fig. 1 is shown as a kind of aluminium pad deriving structure schematic diagram of back side illumination image sensor of the prior art.
Fig. 2 is shown as the step schematic flow sheet of the manufacture method of the back side illumination image sensor of the present invention.
Fig. 3~Fig. 8 is shown as the structural representation that each step of manufacture method of back side illumination image sensor of the present invention is presented
Figure.
Component label instructions
201 support substrates
202 wiring layers
203 interconnecting metal layers
204 draw metal level
205 interconnection metal closures
206 draw metal closures
207 back side illumination image sensor chips
208 grooves
209 separation layers
210 metal gaskets
S11~S14 steps
Embodiment
Illustrate embodiments of the present invention below by way of specific instantiation, those skilled in the art can be by this specification
Disclosed content understands other advantages and effect of the present invention easily.The present invention can also pass through specific realities different in addition
The mode of applying is embodied or practiced, the various details in this specification can also be based on different viewpoints with application, without departing from
Various modifications or alterations are carried out under the spirit of the present invention.
Refer to Fig. 2~Fig. 8.It should be noted that the diagram provided in the present embodiment only illustrates this in a schematic way
The basic conception of invention, the component relevant with the present invention is only shown in illustrating then rather than according to package count during actual implement
Mesh, shape and size are drawn, and kenel, quantity and the ratio of each component can be a kind of random change during its actual implementation, and its
Assembly layout kenel may also be increasingly complex.
As shown in Fig. 2~Fig. 8, the present embodiment provides a kind of manufacture method of back side illumination image sensor, the manufacturer
Method includes:
As shown in Fig. 2~Fig. 3~Fig. 4, step 1) S11 is carried out first, there is provided a back side illumination image sensor chip 207,
Metal closures and wiring layer are formed in the surface of back side illumination image sensor chip 207, the wiring layer includes being used for image
The interconnecting metal layer 203 of sensor-interconnect and for electricity draw extraction metal level 204, the metal closures include with it is described mutually
The even connected interconnection metal closures 205 of metal level, and the extraction metal closures 206 being connected with the extraction metal level, wherein, it is described
207 positive circuit of back side illumination image sensor chip is electrical by the interconnection metal closures 206 and the interconnecting metal layer 203
Connection.
Specifically, the preparation method of the metal closures includes step:
Step a), in forming dielectric layer on the back side illumination image sensor chip 207;
Step b), the circuit extraction for the back side illumination image sensor chip front side is opened from the dielectric layer surface
The first perforate and be subsequently used for the second perforate that the back side illumination image sensor chip back is drawn;
Step c) fills metal in first perforate and the second perforate, with formed it is described interconnection metal closures 205 and
The extraction metal closures 206.
As an example, the interconnection metal closures 205 and the material selection for drawing metal closures 206 are tungsten (W).
As an example, the interconnecting metal layer 203 and the material selection for drawing metal level 204 are copper (Cu), it is described
The material selection of dielectric layer is silica.The wiring layer includes metal level and dielectric layer, described mutually to link metal level 203
And the extraction metal level 204 can be sandwich construction, the corresponding every layer mutual link metal level 203 and the extraction metal
Layer 204 is by dielectric layer interval, and the metal connecting hole in the dielectric layer for passing through interval forms interconnection.
Specifically, the preparation method of the wiring layer includes:
The first step, in forming the first metal layer on the metal closures, and figure is carried out to the metal level according to interconnection needs
Shapeization processing;
Second step, in formation first medium layer on the first metal layer, and through hole is formed in the first medium layer,
Metal is filled in the through hole and forms metal connecting hole;
3rd step, second metal layer is formed in the first medium layer surface, and according to interconnection needs to the metal level
It is patterned processing;
4th step, repeat the above-mentioned first step to the 3rd step, to obtain the wiring layer for meeting interconnection needs.
As an example, formed on the back side illumination image sensor chip 207 after the wiring layer 202, the extraction
The region of back side illumination image sensor chip 207 corresponding to metal closures 206 is the substrate area of non-functional.
As shown in figures 2 and 5, step 2) S12 is then carried out, there is provided a support substrate 201, by the support substrate 201
On the fixed wiring layer.
As an example, it is silicon chip that the support substrate 201, which is selected,.Certainly, it is glass that the support substrate 201, which can also be selected,
The substrates such as glass, ceramics, polymer, effectively to reduce cost.
As an example, the support substrate 201 can be fixed on institute by the way of bonding or using bonding glue bond
State on wiring layer.
As shown in Figures 2 and 6, step 3) S13 is then carried out, is formed in the back side illumination image sensor chip 207
Expose the groove 208 of the extraction metal closures 206;
As an example, using photoetching process and dry etch process in the back side illumination image sensor chip 207 shape
Into the groove 208 for exposing the extraction metal closures 206.
As an example, the cross sectional shape of the groove 208 is inverted trapezoidal, in order to the making of subsequent metal pad 210.By
In the groove of the present invention be single inverted trapezoidal structure, for " the double trapezoid structure " etched compared to traditional both sides, its
Metal filled difficulty can be effectively reduced, and improves metal filled quality, to improve the mechanical stability of metal gasket.
As shown in Fig. 2 and Fig. 7~Fig. 8, step 4) S14 is finally carried out, is formed in the groove 208 and draws gold with described
The metal gasket 210 of the electrical connection of category plug 206, to realize the electrical extraction of the back side illumination image sensor.
As an example, step 4) includes step:
Step 4-1), formed and isolated in the bottom of the groove 208, side wall and top using sputtering technology or evaporation process
Layer 209, to prevent the metal of the metal gasket 210 from spread and improve gluing for the metal gasket 210 and the groove 208
Attached intensity;And
Step 4-2), using sputtering technology or evaporation process in formation metal gasket 210 on the separation layer 209.
As an example, the material selection of the separation layer 209 is titanium/titanium nitride (Ti/TiN) lamination, the metal gasket
210 material selection is aluminium (Al).Certainly, the material of the separation layer 209 can also be changed according to demand, and unlimited
In the example that this place is lifted.
As described above, the present invention only need to can be by the extraction metal closures 206 of pre-production by a photo etching process
Expose, and the electrical extraction of the back side illumination image sensor can be realized by the follow-up metal gasket 210 that directly makes, compare
Expose in traditional Twi-lithography-etching technics for the method for copper wiring layer 202, present invention process is fairly simple, can be significantly
Reduce manufacturing cost.Meanwhile the present invention pads the connection with tungsten plug using aluminium, compared to traditional aluminium pad and phase between layers of copper
Method even, can avoid aluminium and copper contact interface due to the defects of contact resistance caused by electrochemical reaction increases, so as to have
Effect reduces the resistance of connecting line construction.
As shown in figure 8, the present embodiment also provides a kind of back side illumination image sensor, including:Support substrate 201;Wiring layer
202, it is formed in the support substrate 201, the wiring layer 202 includes metal wiring layer 202 and surrounds the hardware cloth
The dielectric layer of line layer 202, the metal wiring layer 202 include being used for the interconnecting metal layer 203 of imaging sensor interconnection and used
In the extraction metal level 204 that electricity is drawn;Metal closures, be formed in the dielectric layer of the wiring layer 202, the metal closures include with
The connected interconnection metal closures 205 of the interconnecting metal layer 203, and the extraction metal closures being connected with the extraction metal level 204
206;Back side illumination image sensor chip 207, it is fixed on the wiring layer 202, the back side illumination image sensor chip
207 positive circuits are electrically connected with by the interconnection metal closures 205 with the interconnecting metal layer 203;Groove 208, is formed at
In the back side illumination image sensor chip 207 and expose have it is described extraction metal closures 206;And metal gasket 210, it is formed at
Electrically connected in the groove 208 and with the extraction metal closures 206, to realize electrically drawing for the back side illumination image sensor
Go out.
As an example, the cross sectional shape of the groove 208 is inverted trapezoidal, in order to the making of subsequent metal pad 210.By
In the groove of the present invention be single inverted trapezoidal structure, for " the double trapezoid structure " etched compared to traditional both sides, its
Metal filled difficulty can be effectively reduced, and improves metal filled quality, to improve the mechanical stability of metal gasket.
As an example, the metal closures include:From the dielectric layer surface open until the interconnecting metal layer 203
First perforate and until the second perforate of the extraction metal level 204;Described in being formed in first perforate filling metal
Interconnect metal closures 205;And metal is filled in second perforate and forms the extraction metal closures 206.
As an example, also there is separation layer 209, to prevent the gold between the metal gasket 210 and the groove 208
The metal of category pad 210 spreads and improves the adhesion strength of the metal gasket 210 and the groove 208.
As an example, the material selection of the separation layer 209 is titanium/titanium nitride (Ti/TiN) lamination, the metal gasket
210 material selection is aluminium (Al).
As an example, the interconnecting metal layer 203 and the material selection for drawing metal level 204 are copper (Cu), it is described
It is tungsten (W) to interconnect metal closures 205 and the material selection for drawing metal closures 206.
The present invention pads the connection with tungsten plug using aluminium, and the method with being connected between layers of copper is padded compared to traditional aluminium,
Can avoid aluminium and copper contact interface due to the defects of contact resistance caused by electrochemical reaction increases, so as to effectively reduce line
The resistance of structure.
As described above, the back side illumination image sensor and its manufacture method of the present invention, have the advantages that:
Then the present invention passes through a photoetching-etching by making tungsten plug on the extraction metal level 204 of wiring layer 202
Technique opens fairlead from the substrate of back side illumination image sensor chip 207, and makes aluminium pad, aluminium pad in the fairlead
It is connected by tungsten plug with drawing metal level 204, the electrical extraction of back side illumination image sensor chip 207 can be realized.The present invention
The electrical extraction of back side illumination image sensor chip 207 need to can be only realized by a photoetching process, present invention process compares
Simply, manufacturing cost can be substantially reduced.Meanwhile the present invention is padded using aluminium pad and the connection of tungsten plug compared to traditional aluminium
The method being connected between layers of copper, increasing due to contact resistance caused by electrochemical reaction for aluminium and copper contact interface can be avoided
Defect, so as to effectively reduce the resistance of connecting line construction.
So the present invention effectively overcomes various shortcoming of the prior art and has high industrial utilization.
The above-described embodiments merely illustrate the principles and effects of the present invention, not for the limitation present invention.It is any ripe
Know the personage of this technology all can carry out modifications and changes under the spirit and scope without prejudice to the present invention to above-described embodiment.Cause
This, those of ordinary skill in the art is complete without departing from disclosed spirit and institute under technological thought such as
Into all equivalent modifications or change, should by the present invention claim be covered.
Claims (11)
1. a kind of manufacture method of back side illumination image sensor, it is characterised in that the manufacture method includes:
1) provide a back side illumination image sensor chip, in the back side illumination image sensor chip surface formed metal closures and
Wiring layer, the wiring layer include the extraction metal for being used for the interconnecting metal layer of imaging sensor interconnection and being drawn for electricity
Layer, the metal closures include the interconnection metal closures being connected with the interconnecting metal layer, and be connected with the extraction metal level
Draw metal closures, wherein, the circuit of the back side illumination image sensor chip front side by the interconnection metal closures with it is described mutually
Even metal level is electrically connected with;
2) support substrate is provided, the support substrate is fixed on the wiring layer surface;
3) groove for exposing the extraction metal closures is formed in the back side illumination image sensor chip;And
4) metal gasket electrically connected with the extraction metal closures is formed in the groove, to realize that the back side illumination image passes
The electrical extraction of sensor.
2. the manufacture method of back side illumination image sensor according to claim 1, it is characterised in that:The system of the metal closures
Making method includes step:
A) in forming dielectric layer on the back side illumination image sensor chip;
B) open the circuit extraction for the back side illumination image sensor chip front side from the dielectric layer surface first opens
Hole and the second perforate for being subsequently used for the back side illumination image sensor chip back extraction;And
C) metal is filled in first perforate and the second perforate, to form the interconnection metal closures and the extraction metal
Plug.
3. the manufacture method of back side illumination image sensor according to claim 1, it is characterised in that:In step 3), use
Photoetching process and dry etch process are formed in the back side illumination image sensor chip exposes the recessed of the extraction metal closures
Groove.
4. the manufacture method of back side illumination image sensor according to claim 1, it is characterised in that:Step 4) includes step
Suddenly:
Separation layer 4-1) is formed in the bottom of the groove, side wall and top using sputtering technology or evaporation process, to prevent
The metal for stating metal gasket spreads and improves the adhesion strength of the metal gasket and the groove;And
4-2) using sputtering technology or evaporation process in forming metal gasket on the separation layer.
5. the manufacture method of back side illumination image sensor according to claim 4, it is characterised in that:The material of the separation layer
For material from being titanium/titanium nitride (Ti/TiN) lamination, the material selection of the metal gasket is aluminium (Al).
6. the manufacture method of back side illumination image sensor according to claim 1, it is characterised in that:The interconnecting metal layer
And the material selection for drawing metal level is copper (Cu), the material selection of the interconnection metal closures and the extraction metal closures is
Tungsten (W).
A kind of 7. back side illumination image sensor, it is characterised in that including:
Support substrate;
Wiring layer, it is formed in the support substrate, the wiring layer includes metal wiring layer and surrounds the metal line
The dielectric layer of layer, the metal wiring layer include being used for the interconnecting metal layer of imaging sensor interconnection and drawn for what electricity was drawn
Go out metal level;
Metal closures, it is formed in the dielectric layer of the wiring layer, the metal closures are mutual including being connected with the interconnecting metal layer
Even metal closures, and the extraction metal closures being connected with the extraction metal level;
Back side illumination image sensor chip, it is fixed on the wiring layer, the electricity of the back side illumination image sensor chip front side
Road is electrically connected with by the interconnection metal closures with the interconnecting metal layer;
Groove, being formed in the back side illumination image sensor chip and exposing has the extraction metal closures;And
Metal gasket, it is formed in the groove and is electrically connected with the extraction metal closures, to realize that the back side illumination image passes
The electrical extraction of sensor.
8. back side illumination image sensor according to claim 7, it is characterised in that:The metal closures include:
From dielectric layer surface opening until the first perforate and until the extraction metal level of the interconnecting metal layer
The second perforate;
In the interconnection metal closures that first perforate filling metal is formed;And
Metal is filled in second perforate and forms the extraction metal closures.
9. back side illumination image sensor according to claim 7, it is characterised in that:The metal gasket and the groove it
Between also there is separation layer, to prevent the metal of the metal gasket from spreading and improve the adhesion of the metal gasket and the groove
Intensity.
10. back side illumination image sensor according to claim 9, it is characterised in that:The material selection of the separation layer is
Titanium/titanium nitride (Ti/TiN) lamination, the material selection of the metal gasket is aluminium (Al).
11. back side illumination image sensor according to claim 7, it is characterised in that:The interconnecting metal layer and described draw
The material selection for going out metal level is copper (Cu), and the interconnection metal closures and the material selection for drawing metal closures are tungsten (W).
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CN113964145A (en) * | 2020-07-20 | 2022-01-21 | 格科微电子(上海)有限公司 | Backside illuminated image sensor chip |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105580136A (en) * | 2013-10-04 | 2016-05-11 | 索尼公司 | Semiconductor device and solid-state imaging element |
WO2016121521A1 (en) * | 2015-01-29 | 2016-08-04 | ソニー株式会社 | Solid-state imaging element and electronic device |
CN107026184A (en) * | 2016-01-29 | 2017-08-08 | 台湾积体电路制造股份有限公司 | Integrated wafer structure and forming method thereof |
-
2017
- 2017-10-27 CN CN201711056829.3A patent/CN107887401A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105580136A (en) * | 2013-10-04 | 2016-05-11 | 索尼公司 | Semiconductor device and solid-state imaging element |
WO2016121521A1 (en) * | 2015-01-29 | 2016-08-04 | ソニー株式会社 | Solid-state imaging element and electronic device |
CN107026184A (en) * | 2016-01-29 | 2017-08-08 | 台湾积体电路制造股份有限公司 | Integrated wafer structure and forming method thereof |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113964145A (en) * | 2020-07-20 | 2022-01-21 | 格科微电子(上海)有限公司 | Backside illuminated image sensor chip |
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