CN107887401A - Back side illumination image sensor and its manufacture method - Google Patents

Back side illumination image sensor and its manufacture method Download PDF

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Publication number
CN107887401A
CN107887401A CN201711056829.3A CN201711056829A CN107887401A CN 107887401 A CN107887401 A CN 107887401A CN 201711056829 A CN201711056829 A CN 201711056829A CN 107887401 A CN107887401 A CN 107887401A
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CN
China
Prior art keywords
metal
back side
image sensor
illumination image
side illumination
Prior art date
Application number
CN201711056829.3A
Other languages
Chinese (zh)
Inventor
姜怡雯
李志伟
黄仁德
Original Assignee
德淮半导体有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 德淮半导体有限公司 filed Critical 德淮半导体有限公司
Priority to CN201711056829.3A priority Critical patent/CN107887401A/en
Publication of CN107887401A publication Critical patent/CN107887401A/en

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Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14683Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14687Wafer level processing
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14636Interconnect structures
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/1464Back illuminated imager structures

Abstract

The present invention provides a kind of back side illumination image sensor and its manufacture method, including:Support substrate;Wiring layer, including metal wiring layer and the dielectric layer for surrounding the metal wiring layer, the metal wiring layer include the extraction metal level for being used for the interconnecting metal layer of imaging sensor interconnection and being drawn for electricity;Metal closures, including the interconnection metal closures being connected with the interconnecting metal layer, and the extraction metal closures being connected with the extraction metal level;Back side illumination image sensor chip, its positive circuit are electrically connected with by the interconnection metal closures with the interconnecting metal layer;Groove, being formed in the back side illumination image sensor chip and exposing has the extraction metal closures;And metal gasket, it is formed in the groove and is electrically connected with the extraction metal closures.The present invention need to can only realize the electrical extraction of back side illumination image sensor chip by a photoetching process, and present invention process is fairly simple, can substantially reduce manufacturing cost.

Description

Back side illumination image sensor and its manufacture method

Technical field

The invention belongs to field of semiconductor manufacture, more particularly to a kind of back side illumination image sensor and its manufacture method.

Background technology

In the positive illuminated structures of traditional FSI, photon, which wants arrival photodiode, to be needed through insulating barrier and metal level, During this, partial photonic can be rebounded by insulating barrier and metal layer reflection in air, cause the reduction of image sensor sensitivity.The back of the body It is the structural change of element internal in place of the maximum optimization of illuminated image sensor, back-illuminated image is by the element of photosensitive layer Direction is turned, allowing luminous energy, direct projection is entered from the back side, is avoided in conventional image sensor structure, light can be by lenticule and light The influence of circuit and transistor between electric diode, so as to significantly improve the efficiency of light, substantially improve under low-light conditions Photosensitive effect, it is seen then that back side illumination image sensor has qualitative leap than conventional image sensor in sensitivity meeting.

Existing most of back side illumination image sensor is mainly connected polysilicon gate and aluminium pad by silicon chip passage (TSV) Pick up and, but TSV and polysilicon gate contact resistance are larger.Technology that the aluminium that presently, there are pads and metal layer copper is directly in contact, Preparation technology is complicated, and cost of manufacture is high.

The new back side illumination image sensor that currently exists as shown in figure 1, the characteristics of its is main be aluminium pad 104 with Metal layer copper 101 is directly in contact.Its preparation method is by first time photo etching process that back side illumination image sensor is brilliant Round substrate opens the first groove, and one layer of separation layer is deposited in first groove;Existed again by second of photo etching process Second groove is formed on the bottom of the first groove, and second groove is terminated on metal level, and redeposited one layer of separation layer;Finally sink The metallic aluminium that product is connected with the metal layer copper, form aluminium pad.Such a technique needs twice photoetching process, and its cost is higher.

Based on described above, there is provided a kind of back-illuminated type figure that can effectively reduce technology difficulty and effectively reduce manufacturing cost As sensor and its manufacture method are necessary.

The content of the invention

In view of the above the shortcomings that prior art, it is an object of the invention to provide a kind of back side illumination image sensor and Its manufacture method, it is complicated for solving the aluminium of back side illumination image sensor in the prior art pad manufacturing process, process costs compared with The problem of high.

In order to achieve the above objects and other related objects, the present invention provides a kind of manufacturer of back side illumination image sensor Method, the manufacture method include:1) a back side illumination image sensor chip is provided, in the back side illumination image sensor chip list Face forms metal closures and wiring layer, and the wiring layer includes being used for the interconnecting metal layer of imaging sensor interconnection and for electricity The extraction metal level of extraction, the metal closures include the interconnection metal closures being connected with the interconnecting metal layer, and draw with described Go out the connected extraction metal closures of metal level, wherein, the circuit of the back side illumination image sensor chip front side passes through the interconnection Metal closures are electrically connected with the interconnecting metal layer;2) support substrate is provided, the support substrate is fixed on the wiring Layer surface;3) groove for exposing the extraction metal closures is formed in the back side illumination image sensor chip;And 4) in institute The metal gasket for being formed in groove and being electrically connected with the extraction metal closures is stated, to realize the electrical of the back side illumination image sensor Draw.

Preferably, the preparation method of the metal closures includes step:A) in shape on the back side illumination image sensor chip Into dielectric layer;B) the of the circuit extraction for the back side illumination image sensor chip front side is opened from the dielectric layer surface One perforate and the second perforate for being subsequently used for the back side illumination image sensor chip back extraction;And c) in described Metal is filled in one perforate and the second perforate, to form the interconnection metal closures and the extraction metal closures.

Preferably, in step 3), using photoetching process and dry etch process in the back side illumination image sensor chip The groove of the extraction metal closures is exposed in middle formation.

Preferably, step 4) includes step:4-1) using sputtering technology or evaporation process in the bottom of the groove, side wall And separation layer is formed on top, to prevent the metal of the metal gasket from spread and improve gluing for the metal gasket and the groove Attached intensity;And 4-2) using sputtering technology or evaporation process in forming metal gasket on the separation layer.

Further, the material selection of the separation layer is titanium/titanium nitride (Ti/TiN) lamination, the material of the metal gasket It is aluminium (Al) that material, which is selected,.

Preferably, the interconnecting metal layer and the material selection for drawing metal level are copper (Cu), the interconnection metal Plug and the material selection for drawing metal closures are tungsten (W).

The present invention also provides a kind of back side illumination image sensor, including:Support substrate;Wiring layer, it is formed at the support On substrate, the wiring layer includes metal wiring layer and surrounds the dielectric layer of the metal wiring layer, the metal wiring layer Including the interconnecting metal layer interconnected for imaging sensor and the extraction metal level drawn for electricity;Metal closures, it is formed at institute In the dielectric layer for stating wiring layer, the metal closures include the interconnection metal closures that are connected with the interconnecting metal layer, and with it is described Draw the connected extraction metal closures of metal level;Back side illumination image sensor chip, it is fixed on the wiring layer, the back-illuminated type The positive circuit of image sensor chip is electrically connected with by the interconnection metal closures with the interconnecting metal layer;Groove, formed In the back side illumination image sensor chip and expose and there are the extraction metal closures;And metal gasket, it is formed at described recessed Electrically connected in groove and with the extraction metal closures, to realize the electrical extraction of the back side illumination image sensor.

Preferably, the metal closures include:From dielectric layer surface opening until the first of the interconnecting metal layer Perforate and until the second perforate of the extraction metal level;In the interconnection metal that first perforate filling metal is formed Plug;And fill metal in second perforate and form the extraction metal closures.

Preferably, also there is separation layer, to prevent the gold of the metal gasket between the metal gasket and the groove Category spreads and improves the adhesion strength of the metal gasket and the groove.

Further, the material selection of the separation layer is titanium/titanium nitride (Ti/TiN) lamination, the material of the metal gasket It is aluminium (Al) that material, which is selected,.

Preferably, the interconnecting metal layer and the material selection for drawing metal level are copper (Cu), the interconnection metal Plug and the material selection for drawing metal closures are tungsten (W).

As described above, the back side illumination image sensor and its manufacture method of the present invention, have the advantages that:

The present invention by making tungsten plug on the extraction metal level of wiring layer, then by a photo etching process from The substrate of back side illumination image sensor chip opens fairlead, and makes aluminium pad in the fairlead, and aluminium pad passes through tungsten plug It is connected with drawing metal level, the electrical extraction of back side illumination image sensor chip can be realized.The present invention only need to pass through once light Carving technology can realize the electrical extraction of back side illumination image sensor chip, and present invention process is fairly simple, can substantially reduce system Cause this.Meanwhile the present invention pads the connection with tungsten plug using aluminium, compared to traditional aluminium pad and the side being connected between layers of copper Method, can avoid aluminium and copper contact interface due to the defects of contact resistance caused by electrochemical reaction increases, so as to effectively reduce The resistance of connecting line construction.

Brief description of the drawings

Fig. 1 is shown as a kind of aluminium pad deriving structure schematic diagram of back side illumination image sensor of the prior art.

Fig. 2 is shown as the step schematic flow sheet of the manufacture method of the back side illumination image sensor of the present invention.

Fig. 3~Fig. 8 is shown as the structural representation that each step of manufacture method of back side illumination image sensor of the present invention is presented Figure.

Component label instructions

201 support substrates

202 wiring layers

203 interconnecting metal layers

204 draw metal level

205 interconnection metal closures

206 draw metal closures

207 back side illumination image sensor chips

208 grooves

209 separation layers

210 metal gaskets

S11~S14 steps

Embodiment

Illustrate embodiments of the present invention below by way of specific instantiation, those skilled in the art can be by this specification Disclosed content understands other advantages and effect of the present invention easily.The present invention can also pass through specific realities different in addition The mode of applying is embodied or practiced, the various details in this specification can also be based on different viewpoints with application, without departing from Various modifications or alterations are carried out under the spirit of the present invention.

Refer to Fig. 2~Fig. 8.It should be noted that the diagram provided in the present embodiment only illustrates this in a schematic way The basic conception of invention, the component relevant with the present invention is only shown in illustrating then rather than according to package count during actual implement Mesh, shape and size are drawn, and kenel, quantity and the ratio of each component can be a kind of random change during its actual implementation, and its Assembly layout kenel may also be increasingly complex.

As shown in Fig. 2~Fig. 8, the present embodiment provides a kind of manufacture method of back side illumination image sensor, the manufacturer Method includes:

As shown in Fig. 2~Fig. 3~Fig. 4, step 1) S11 is carried out first, there is provided a back side illumination image sensor chip 207, Metal closures and wiring layer are formed in the surface of back side illumination image sensor chip 207, the wiring layer includes being used for image The interconnecting metal layer 203 of sensor-interconnect and for electricity draw extraction metal level 204, the metal closures include with it is described mutually The even connected interconnection metal closures 205 of metal level, and the extraction metal closures 206 being connected with the extraction metal level, wherein, it is described 207 positive circuit of back side illumination image sensor chip is electrical by the interconnection metal closures 206 and the interconnecting metal layer 203 Connection.

Specifically, the preparation method of the metal closures includes step:

Step a), in forming dielectric layer on the back side illumination image sensor chip 207;

Step b), the circuit extraction for the back side illumination image sensor chip front side is opened from the dielectric layer surface The first perforate and be subsequently used for the second perforate that the back side illumination image sensor chip back is drawn;

Step c) fills metal in first perforate and the second perforate, with formed it is described interconnection metal closures 205 and The extraction metal closures 206.

As an example, the interconnection metal closures 205 and the material selection for drawing metal closures 206 are tungsten (W).

As an example, the interconnecting metal layer 203 and the material selection for drawing metal level 204 are copper (Cu), it is described The material selection of dielectric layer is silica.The wiring layer includes metal level and dielectric layer, described mutually to link metal level 203 And the extraction metal level 204 can be sandwich construction, the corresponding every layer mutual link metal level 203 and the extraction metal Layer 204 is by dielectric layer interval, and the metal connecting hole in the dielectric layer for passing through interval forms interconnection.

Specifically, the preparation method of the wiring layer includes:

The first step, in forming the first metal layer on the metal closures, and figure is carried out to the metal level according to interconnection needs Shapeization processing;

Second step, in formation first medium layer on the first metal layer, and through hole is formed in the first medium layer, Metal is filled in the through hole and forms metal connecting hole;

3rd step, second metal layer is formed in the first medium layer surface, and according to interconnection needs to the metal level It is patterned processing;

4th step, repeat the above-mentioned first step to the 3rd step, to obtain the wiring layer for meeting interconnection needs.

As an example, formed on the back side illumination image sensor chip 207 after the wiring layer 202, the extraction The region of back side illumination image sensor chip 207 corresponding to metal closures 206 is the substrate area of non-functional.

As shown in figures 2 and 5, step 2) S12 is then carried out, there is provided a support substrate 201, by the support substrate 201 On the fixed wiring layer.

As an example, it is silicon chip that the support substrate 201, which is selected,.Certainly, it is glass that the support substrate 201, which can also be selected, The substrates such as glass, ceramics, polymer, effectively to reduce cost.

As an example, the support substrate 201 can be fixed on institute by the way of bonding or using bonding glue bond State on wiring layer.

As shown in Figures 2 and 6, step 3) S13 is then carried out, is formed in the back side illumination image sensor chip 207 Expose the groove 208 of the extraction metal closures 206;

As an example, using photoetching process and dry etch process in the back side illumination image sensor chip 207 shape Into the groove 208 for exposing the extraction metal closures 206.

As an example, the cross sectional shape of the groove 208 is inverted trapezoidal, in order to the making of subsequent metal pad 210.By In the groove of the present invention be single inverted trapezoidal structure, for " the double trapezoid structure " etched compared to traditional both sides, its Metal filled difficulty can be effectively reduced, and improves metal filled quality, to improve the mechanical stability of metal gasket.

As shown in Fig. 2 and Fig. 7~Fig. 8, step 4) S14 is finally carried out, is formed in the groove 208 and draws gold with described The metal gasket 210 of the electrical connection of category plug 206, to realize the electrical extraction of the back side illumination image sensor.

As an example, step 4) includes step:

Step 4-1), formed and isolated in the bottom of the groove 208, side wall and top using sputtering technology or evaporation process Layer 209, to prevent the metal of the metal gasket 210 from spread and improve gluing for the metal gasket 210 and the groove 208 Attached intensity;And

Step 4-2), using sputtering technology or evaporation process in formation metal gasket 210 on the separation layer 209.

As an example, the material selection of the separation layer 209 is titanium/titanium nitride (Ti/TiN) lamination, the metal gasket 210 material selection is aluminium (Al).Certainly, the material of the separation layer 209 can also be changed according to demand, and unlimited In the example that this place is lifted.

As described above, the present invention only need to can be by the extraction metal closures 206 of pre-production by a photo etching process Expose, and the electrical extraction of the back side illumination image sensor can be realized by the follow-up metal gasket 210 that directly makes, compare Expose in traditional Twi-lithography-etching technics for the method for copper wiring layer 202, present invention process is fairly simple, can be significantly Reduce manufacturing cost.Meanwhile the present invention pads the connection with tungsten plug using aluminium, compared to traditional aluminium pad and phase between layers of copper Method even, can avoid aluminium and copper contact interface due to the defects of contact resistance caused by electrochemical reaction increases, so as to have Effect reduces the resistance of connecting line construction.

As shown in figure 8, the present embodiment also provides a kind of back side illumination image sensor, including:Support substrate 201;Wiring layer 202, it is formed in the support substrate 201, the wiring layer 202 includes metal wiring layer 202 and surrounds the hardware cloth The dielectric layer of line layer 202, the metal wiring layer 202 include being used for the interconnecting metal layer 203 of imaging sensor interconnection and used In the extraction metal level 204 that electricity is drawn;Metal closures, be formed in the dielectric layer of the wiring layer 202, the metal closures include with The connected interconnection metal closures 205 of the interconnecting metal layer 203, and the extraction metal closures being connected with the extraction metal level 204 206;Back side illumination image sensor chip 207, it is fixed on the wiring layer 202, the back side illumination image sensor chip 207 positive circuits are electrically connected with by the interconnection metal closures 205 with the interconnecting metal layer 203;Groove 208, is formed at In the back side illumination image sensor chip 207 and expose have it is described extraction metal closures 206;And metal gasket 210, it is formed at Electrically connected in the groove 208 and with the extraction metal closures 206, to realize electrically drawing for the back side illumination image sensor Go out.

As an example, the cross sectional shape of the groove 208 is inverted trapezoidal, in order to the making of subsequent metal pad 210.By In the groove of the present invention be single inverted trapezoidal structure, for " the double trapezoid structure " etched compared to traditional both sides, its Metal filled difficulty can be effectively reduced, and improves metal filled quality, to improve the mechanical stability of metal gasket.

As an example, the metal closures include:From the dielectric layer surface open until the interconnecting metal layer 203 First perforate and until the second perforate of the extraction metal level 204;Described in being formed in first perforate filling metal Interconnect metal closures 205;And metal is filled in second perforate and forms the extraction metal closures 206.

As an example, also there is separation layer 209, to prevent the gold between the metal gasket 210 and the groove 208 The metal of category pad 210 spreads and improves the adhesion strength of the metal gasket 210 and the groove 208.

As an example, the material selection of the separation layer 209 is titanium/titanium nitride (Ti/TiN) lamination, the metal gasket 210 material selection is aluminium (Al).

As an example, the interconnecting metal layer 203 and the material selection for drawing metal level 204 are copper (Cu), it is described It is tungsten (W) to interconnect metal closures 205 and the material selection for drawing metal closures 206.

The present invention pads the connection with tungsten plug using aluminium, and the method with being connected between layers of copper is padded compared to traditional aluminium, Can avoid aluminium and copper contact interface due to the defects of contact resistance caused by electrochemical reaction increases, so as to effectively reduce line The resistance of structure.

As described above, the back side illumination image sensor and its manufacture method of the present invention, have the advantages that:

Then the present invention passes through a photoetching-etching by making tungsten plug on the extraction metal level 204 of wiring layer 202 Technique opens fairlead from the substrate of back side illumination image sensor chip 207, and makes aluminium pad, aluminium pad in the fairlead It is connected by tungsten plug with drawing metal level 204, the electrical extraction of back side illumination image sensor chip 207 can be realized.The present invention The electrical extraction of back side illumination image sensor chip 207 need to can be only realized by a photoetching process, present invention process compares Simply, manufacturing cost can be substantially reduced.Meanwhile the present invention is padded using aluminium pad and the connection of tungsten plug compared to traditional aluminium The method being connected between layers of copper, increasing due to contact resistance caused by electrochemical reaction for aluminium and copper contact interface can be avoided Defect, so as to effectively reduce the resistance of connecting line construction.

So the present invention effectively overcomes various shortcoming of the prior art and has high industrial utilization.

The above-described embodiments merely illustrate the principles and effects of the present invention, not for the limitation present invention.It is any ripe Know the personage of this technology all can carry out modifications and changes under the spirit and scope without prejudice to the present invention to above-described embodiment.Cause This, those of ordinary skill in the art is complete without departing from disclosed spirit and institute under technological thought such as Into all equivalent modifications or change, should by the present invention claim be covered.

Claims (11)

1. a kind of manufacture method of back side illumination image sensor, it is characterised in that the manufacture method includes:
1) provide a back side illumination image sensor chip, in the back side illumination image sensor chip surface formed metal closures and Wiring layer, the wiring layer include the extraction metal for being used for the interconnecting metal layer of imaging sensor interconnection and being drawn for electricity Layer, the metal closures include the interconnection metal closures being connected with the interconnecting metal layer, and be connected with the extraction metal level Draw metal closures, wherein, the circuit of the back side illumination image sensor chip front side by the interconnection metal closures with it is described mutually Even metal level is electrically connected with;
2) support substrate is provided, the support substrate is fixed on the wiring layer surface;
3) groove for exposing the extraction metal closures is formed in the back side illumination image sensor chip;And
4) metal gasket electrically connected with the extraction metal closures is formed in the groove, to realize that the back side illumination image passes The electrical extraction of sensor.
2. the manufacture method of back side illumination image sensor according to claim 1, it is characterised in that:The system of the metal closures Making method includes step:
A) in forming dielectric layer on the back side illumination image sensor chip;
B) open the circuit extraction for the back side illumination image sensor chip front side from the dielectric layer surface first opens Hole and the second perforate for being subsequently used for the back side illumination image sensor chip back extraction;And
C) metal is filled in first perforate and the second perforate, to form the interconnection metal closures and the extraction metal Plug.
3. the manufacture method of back side illumination image sensor according to claim 1, it is characterised in that:In step 3), use Photoetching process and dry etch process are formed in the back side illumination image sensor chip exposes the recessed of the extraction metal closures Groove.
4. the manufacture method of back side illumination image sensor according to claim 1, it is characterised in that:Step 4) includes step Suddenly:
Separation layer 4-1) is formed in the bottom of the groove, side wall and top using sputtering technology or evaporation process, to prevent The metal for stating metal gasket spreads and improves the adhesion strength of the metal gasket and the groove;And
4-2) using sputtering technology or evaporation process in forming metal gasket on the separation layer.
5. the manufacture method of back side illumination image sensor according to claim 4, it is characterised in that:The material of the separation layer For material from being titanium/titanium nitride (Ti/TiN) lamination, the material selection of the metal gasket is aluminium (Al).
6. the manufacture method of back side illumination image sensor according to claim 1, it is characterised in that:The interconnecting metal layer And the material selection for drawing metal level is copper (Cu), the material selection of the interconnection metal closures and the extraction metal closures is Tungsten (W).
A kind of 7. back side illumination image sensor, it is characterised in that including:
Support substrate;
Wiring layer, it is formed in the support substrate, the wiring layer includes metal wiring layer and surrounds the metal line The dielectric layer of layer, the metal wiring layer include being used for the interconnecting metal layer of imaging sensor interconnection and drawn for what electricity was drawn Go out metal level;
Metal closures, it is formed in the dielectric layer of the wiring layer, the metal closures are mutual including being connected with the interconnecting metal layer Even metal closures, and the extraction metal closures being connected with the extraction metal level;
Back side illumination image sensor chip, it is fixed on the wiring layer, the electricity of the back side illumination image sensor chip front side Road is electrically connected with by the interconnection metal closures with the interconnecting metal layer;
Groove, being formed in the back side illumination image sensor chip and exposing has the extraction metal closures;And
Metal gasket, it is formed in the groove and is electrically connected with the extraction metal closures, to realize that the back side illumination image passes The electrical extraction of sensor.
8. back side illumination image sensor according to claim 7, it is characterised in that:The metal closures include:
From dielectric layer surface opening until the first perforate and until the extraction metal level of the interconnecting metal layer The second perforate;
In the interconnection metal closures that first perforate filling metal is formed;And
Metal is filled in second perforate and forms the extraction metal closures.
9. back side illumination image sensor according to claim 7, it is characterised in that:The metal gasket and the groove it Between also there is separation layer, to prevent the metal of the metal gasket from spreading and improve the adhesion of the metal gasket and the groove Intensity.
10. back side illumination image sensor according to claim 9, it is characterised in that:The material selection of the separation layer is Titanium/titanium nitride (Ti/TiN) lamination, the material selection of the metal gasket is aluminium (Al).
11. back side illumination image sensor according to claim 7, it is characterised in that:The interconnecting metal layer and described draw The material selection for going out metal level is copper (Cu), and the interconnection metal closures and the material selection for drawing metal closures are tungsten (W).
CN201711056829.3A 2017-10-27 2017-10-27 Back side illumination image sensor and its manufacture method CN107887401A (en)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105580136A (en) * 2013-10-04 2016-05-11 索尼公司 Semiconductor device and solid-state imaging element
WO2016121521A1 (en) * 2015-01-29 2016-08-04 ソニー株式会社 Solid-state imaging element and electronic device
CN107026184A (en) * 2016-01-29 2017-08-08 台湾积体电路制造股份有限公司 Integrated wafer structure and forming method thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105580136A (en) * 2013-10-04 2016-05-11 索尼公司 Semiconductor device and solid-state imaging element
WO2016121521A1 (en) * 2015-01-29 2016-08-04 ソニー株式会社 Solid-state imaging element and electronic device
CN107026184A (en) * 2016-01-29 2017-08-08 台湾积体电路制造股份有限公司 Integrated wafer structure and forming method thereof

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