CN107881552B - 一种用于单晶硅的高效生产设备 - Google Patents
一种用于单晶硅的高效生产设备 Download PDFInfo
- Publication number
- CN107881552B CN107881552B CN201711446141.6A CN201711446141A CN107881552B CN 107881552 B CN107881552 B CN 107881552B CN 201711446141 A CN201711446141 A CN 201711446141A CN 107881552 B CN107881552 B CN 107881552B
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- CN
- China
- Prior art keywords
- microwave
- single crystal
- graphite
- furnace
- quartz
- Prior art date
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- Active
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 13
- 239000010453 quartz Substances 0.000 claims abstract description 60
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 60
- 239000013078 crystal Substances 0.000 claims abstract description 55
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 53
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 53
- 239000010439 graphite Substances 0.000 claims abstract description 53
- 229910001220 stainless steel Inorganic materials 0.000 claims abstract description 29
- 239000010935 stainless steel Substances 0.000 claims abstract description 29
- 238000010438 heat treatment Methods 0.000 claims abstract description 23
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 20
- 239000011733 molybdenum Substances 0.000 claims abstract description 20
- 230000005540 biological transmission Effects 0.000 claims abstract description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000007788 liquid Substances 0.000 claims abstract description 5
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 5
- 239000010703 silicon Substances 0.000 claims abstract description 5
- 238000009413 insulation Methods 0.000 claims description 6
- 238000004321 preservation Methods 0.000 description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 238000005265 energy consumption Methods 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 3
- 238000001816 cooling Methods 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000009123 feedback regulation Effects 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000002912 waste gas Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
- C30B15/12—Double crucible methods
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
- C30B15/16—Heating of the melt or the crystallised materials by irradiation or electric discharge
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (3)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201711446141.6A CN107881552B (zh) | 2017-12-27 | 2017-12-27 | 一种用于单晶硅的高效生产设备 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201711446141.6A CN107881552B (zh) | 2017-12-27 | 2017-12-27 | 一种用于单晶硅的高效生产设备 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN107881552A CN107881552A (zh) | 2018-04-06 |
CN107881552B true CN107881552B (zh) | 2023-10-24 |
Family
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Family Applications (1)
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---|---|---|---|
CN201711446141.6A Active CN107881552B (zh) | 2017-12-27 | 2017-12-27 | 一种用于单晶硅的高效生产设备 |
Country Status (1)
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CN (1) | CN107881552B (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110078079A (zh) * | 2019-05-30 | 2019-08-02 | 重庆大全泰来电气有限公司 | 一种电子级高纯多晶硅还原启动设备和启动方法 |
CN110760929A (zh) * | 2019-12-02 | 2020-02-07 | 大连威凯特科技有限公司 | 直拉式单晶硅棒的生产设备 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009292684A (ja) * | 2008-06-05 | 2009-12-17 | Sumco Corp | シリコン単結晶の製造方法およびこれに用いる製造装置 |
CN203790936U (zh) * | 2014-01-17 | 2014-08-27 | 内蒙古科技大学 | 多功能微波加热真空炉 |
CN204630252U (zh) * | 2015-04-14 | 2015-09-09 | 昆明理工大学 | 一种微波真空干燥装置 |
CN106319618A (zh) * | 2016-09-22 | 2017-01-11 | 上海交通大学 | 一种由硅烷制造直拉单晶硅棒的设备及方法 |
CN106894079A (zh) * | 2015-12-21 | 2017-06-27 | 上海超硅半导体有限公司 | 单晶硅锭生长装置 |
-
2017
- 2017-12-27 CN CN201711446141.6A patent/CN107881552B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009292684A (ja) * | 2008-06-05 | 2009-12-17 | Sumco Corp | シリコン単結晶の製造方法およびこれに用いる製造装置 |
CN203790936U (zh) * | 2014-01-17 | 2014-08-27 | 内蒙古科技大学 | 多功能微波加热真空炉 |
CN204630252U (zh) * | 2015-04-14 | 2015-09-09 | 昆明理工大学 | 一种微波真空干燥装置 |
CN106894079A (zh) * | 2015-12-21 | 2017-06-27 | 上海超硅半导体有限公司 | 单晶硅锭生长装置 |
CN106319618A (zh) * | 2016-09-22 | 2017-01-11 | 上海交通大学 | 一种由硅烷制造直拉单晶硅棒的设备及方法 |
Also Published As
Publication number | Publication date |
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CN107881552A (zh) | 2018-04-06 |
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Effective date of registration: 20190505 Address after: 054000 No. 188 Xindu Road, Xingtai Economic Development Zone, Xingtai City, Hebei Province Applicant after: XINGTAI JINGLONG NEW ENERGY Co.,Ltd. Address before: 055550 No.1 Industrial Park, Dacaozhuang Administrative Zone, Xingtai City, Hebei Province Applicant before: HEBEI NINGTONG ELECTRONIC MATERIAL Co.,Ltd. |
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Effective date of registration: 20221115 Address after: No.1688 Chang'an Road, Xingtai Economic Development Zone, Hebei Province 054000 Applicant after: JA (XINGTAI) SOLAR Co.,Ltd. Address before: 054000 No. 188 Xindu Road, Xingtai Economic Development Zone, Xingtai City, Hebei Province Applicant before: XINGTAI JINGLONG NEW ENERGY Co.,Ltd. |
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