CN107872153B - A kind of charge pump circuit - Google Patents
A kind of charge pump circuit Download PDFInfo
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- CN107872153B CN107872153B CN201611077674.7A CN201611077674A CN107872153B CN 107872153 B CN107872153 B CN 107872153B CN 201611077674 A CN201611077674 A CN 201611077674A CN 107872153 B CN107872153 B CN 107872153B
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
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Abstract
The present invention relates to a kind of charge pump circuit, which includes: biasing branch, reference arm, charge and discharge branch, charging shutdown accelerating circuit and electric discharge shutdown accelerating circuit；The charging signals end of reference arm is connected with the charging signals end of charge and discharge branch, and the discharge signal end of reference arm is connected with the discharge signal end of charge and discharge branch, and the signal output end for biasing branch is connected with the discharge signal end of the reference arm；Charge and discharge branch is also separately connected with charging shutdown accelerating circuit, electric discharge shutdown accelerating circuit；Charging shutdown accelerating circuit is connected to the forward end of the charging control signal of the charge pump circuit, and charge and discharge branch, electric discharge shutdown accelerating circuit are all connected to the forward end of the discharge control signal of the charge pump circuit；The current potential of charge and discharge branch, quickly can be changed to rapidly a suitable voltage value, can accelerate the shutdown of charge and discharge control signal by charging shutdown accelerating circuit and electric discharge shutdown accelerating circuit.
Description
Technical field
The present invention relates to integrated electronic technical fields, more particularly to a kind of charge pump circuit.
Background technique
PHASE-LOCKED LOOP PLL TECHNIQUE is very widely used in modern integrated circuits, such as the clock in system on chip generates, is wired
With clock and data recovery, frequency synthesis and the modulation /demodulation of wireless communication chips etc..
The performance of electric charge pump module plays a very important role in the stability of phase-locked loop output frequency.Charge pump
Performance indicator mainly has at 3 points: the matching precision of charging current (Iup) and discharge current (Idn), electric current establish the speed with shutdown
Spend speed and consistency, charge switch S1With discharge switch S2Switching noise size.The charge pump of function admirable, charging current
(Iup) and the matching precision of discharge current (Idn) is high；When switch closes, being charged and discharged electric current can be established rapidly, and establish
Speed is almost the same；When switch disconnects, being charged and discharged electric current can be turned off rapidly, and the speed turned off is almost the same；Charging
(UP) and the switching noise that (DN) signal is coupled to charge pump outputs CPO by charge switch S1 and discharge switch S2 that discharges is non-
It is often small.
Existing source switch charge pump circuit is as shown in Figure 1, due to parasitic capacitance, transistor mp1 and crystal
For the connecting node vps of pipe mp2 after transistor mp1 shutdown, voltage is to meet transistor than relatively slowly dropping to from about VDD
The value of mp2 shutdown, the grid voltage vbp that this value is about transistor mp2 add the threshold voltage vt hp of transistor mp2, cause
Iup switch off current to zero time is long.Similarly, the connecting node vns of transistor mn1 and transistor mn2 is in transistor mn1
After shutdown, voltage is also the off value for meeting transistor mn2 than being relatively slowly increased to from about zero, about transistor mn2's
Grid voltage vbn subtracts the threshold voltage vt hn of transistor mn2, causes for Idn switch off current to zero time long.
Summary of the invention
Based on this, it is necessary to establish long, the slow-footed problem with shutdown for source switch charge pump current, mention
For a kind of charge pump circuit.
A kind of charge pump circuit, comprising: biasing branch, reference arm, charge and discharge branch, charging turn off accelerating circuit and put
Electricity shutdown accelerating circuit；The charging signals end of the reference arm is connected with the charging signals end of charge and discharge branch, the reference
The discharge signal end of branch is connected with the discharge signal end of charge and discharge branch, the signal output end of the biasing branch and the ginseng
Examine the discharge signal end connection of branch；The charge and discharge branch also divides with charging shutdown accelerating circuit, electric discharge shutdown accelerating circuit
It does not connect；The charge and discharge branch, charging shutdown accelerating circuit are all connected to the charging control signal of the charge pump circuit
Backward end, the charging shutdown accelerating circuit is also connected to the forward end of the charging control signal of the charge pump circuit, described
Charge and discharge branch, electric discharge shutdown accelerating circuit are all connected to the forward end of the discharge control signal of the charge pump circuit, described
Electric discharge shutdown accelerating circuit is also connected to the backward end of the discharge control signal of the charge pump circuit.
The beneficial effect of this programme includes: by the way that charging shutdown accelerating circuit and electric discharge shutdown are arranged on charge pump circuit
The current potential of the current source of charge and discharge branch quickly can be changed to rapidly a suitable voltage value by accelerating circuit, so that
Current source complete switches off, and can accelerate the shutdown of charge and discharge control signal.
Detailed description of the invention
Fig. 1 is existing source switch charge pump circuit；
Fig. 2 is the schematic circuit of the charge pump circuit of an embodiment；
Fig. 3 is the circuit diagram of the charge pump circuit of a preferred embodiment；
Fig. 4 is the circuit diagram of the charge pump circuit of another preferred embodiment；
Fig. 5 is the charging and discharging currents of existing source switch charge pump circuit and charge pump circuit of the present invention showing at work
Meaning property waveform.
Specific embodiment
In order to further illustrate the effect of technological means adopted by the present invention and acquirement, with reference to the accompanying drawing and preferably
Embodiment carries out clear and complete description to technical solution of the present invention.
Fig. 2 is the schematic circuit of the charge pump circuit of an embodiment.As shown in Fig. 2, a kind of charge pump circuit, packet
Include: biasing branch 500, reference arm 400, charge and discharge branch 300, charging shutdown accelerating circuit 200 and electric discharge shutdown accelerate electricity
Road 100；The charging signals end vbp of the reference arm 400 is connected with the charging signals end vbp of charge and discharge branch 300, the ginseng
The discharge signal end vbn for examining branch 400 is connected with the discharge signal end vbn of charge and discharge branch, the signal of the biasing branch 500
Output end (not marking in figure) is connected with the discharge signal end vbn of the reference arm signal 400；The charge and discharge branch 300
Also it is separately connected with charging shutdown accelerating circuit 200, electric discharge shutdown accelerating circuit 100；The charge and discharge branch 300, charging are closed
Disconnected accelerating circuit 200 is all connected to the backward end Upb of the charging control signal of the charge pump circuit, and the charging shutdown accelerates
Circuit 200 is also connected to the forward end Up of the charging control signal of the charge pump circuit, the charge and discharge branch 300, electric discharge
Shutdown accelerating circuit 100 is all connected to the forward end DN of the discharge control signal of the charge pump circuit, and the electric discharge shutdown adds
Fast circuit 100 is also connected to the backward end DNb of the discharge control signal of the charge pump circuit.
Fig. 3 is the circuit diagram of the charge pump circuit of a preferred embodiment；As shown in figure 3, the charging shutdown accelerates electricity
Road 200 includes that the first operational amplifier (A1), the first P-type transistor (mp1), the second P-type transistor (mp2) and the first delay are single
First (dly0)；The grid of first P-type transistor (mp1) is connected to the forward direction of the charging control signal of the charge pump circuit
End, the source electrode of first P-type transistor (mp1) connects with charge and discharge branch, the drain electrode of the first P-type transistor (mp1) and the
The source electrodes of two P-type transistors (mp2) connects, the grid of second P-type transistor (mp2) and the first delay unit (dly0)
Output end connection, the drain electrode of second P-type transistor (mp2) is connected with the output end of the first operational amplifier (A1), described
The reverse input end of first operational amplifier (A1) is connected with the output end of first operational amplifier (A1), first fortune
The noninverting input for calculating amplifier (A1) is connected with charge and discharge branch, and the input terminal of first delay unit (dly0) is connected to
The backward end of the charging control signal of the charge pump circuit.
The electric discharge shutdown accelerating circuit includes second operational amplifier (A2), the first N-type transistor (mn1), the second N-type
Transistor (mn2) and the second delay unit (dly1)；The input terminal of second delay unit (dly1) is connected to the charge pump electricity
The forward end DN of the discharge control signal on road, the output end of the second delay unit (dly1) connect the grid of the second N-type crystal, institute
The source electrode for stating the second N-type transistor (mn2) is connected with the output end of second operational amplifier (A2), second N-type transistor
(mn2) drain electrode is connected with the source electrode of the first N-type transistor (mn1), the drain electrode and charge and discharge of first N-type transistor (mn1)
Electric branch connection, the grid of the first N-type transistor (mn1) are connected to the backward end of the discharge control signal of the charge pump circuit
The reverse input end of DNb, the second operational amplifier (A2) are connected with the output end of second operational amplifier (A2), and described
The noninverting input of two operational amplifiers (A2) is connected with charge and discharge branch.
Charge and discharge branch includes: third P-type transistor (mp3), the 4th P-type transistor (mp4), third N-type transistor
(mn3), the 4th N-type transistor (mn4), the 5th N-type transistor (mn5) and power supply vdd terminal；The third P-type transistor (mp3)
Grid input be connected to the charge pump circuit charging control signal backward end Upb, the third P-type transistor
(mp3) source electrode is connected with power supply vdd terminal, the drain electrode of the third P-type transistor (mp3) and the first P-type transistor (mp1)
Source electrode connection, the drain electrode of the third P-type transistor (mp3) also connects with the source electrode of the 4th P-type transistor (mp4), and described the
The grid of four P-type transistors (mp4) is connected with the charging signals end vbp of reference arm, the 4th P-type transistor (mp4)
Grid is also connected with the noninverting input of the first operational amplifier (A1), and the drain electrode of the 4th P-type transistor (mp4) is connected to described
The signal output end CPO of charge pump circuit, the drain electrode of the 4th P-type transistor (mp4) also with third N-type transistor (mn3)
Source electrode connection, the grid of the third N-type transistor (mn3) is connected with the first discharge signal of reference arm end vbn1, described
The grid of third N-type transistor (mn3) is also connected with the noninverting input of second operational amplifier (A2), and the third N-type is brilliant
The drain electrode of body pipe (mn3) is connected with the source electrode of the 4th N-type transistor (mn4), and the drain electrode of the third N-type transistor (mn3) is also
It is connected with the drain electrode of the second N-type transistor (mn2), the grid of the 4th N-type transistor (mn4) and the second of reference arm are put
The vbn0 connection of electric signal end, the drain electrode of the 4th N-type transistor (mn4) are connected with the source electrode of the 5th N-type transistor (mn5),
The grid connection of 5th N-type transistor (mn5) is input to the forward end DN of the discharge control signal of the charge pump circuit,
The grounded drain of 5th N-type transistor (mn5).
The implementation of the present embodiment quickening charging current turn-off are as follows: operational amplifier (A1) is connected into unity gain buffer
Form, so that node vrh is equal with vbp voltage.First delay unit (dly0) input is charging control signal UPb, exports and is
UPbd.At the end of charging, UPb jumps to high level from low level, while UP jumps to low level, charge switch from high level
Third P-type transistor (mp3) is used as charge switch, is turned off, and the first P-type transistor (mp1) is opened.Due to the first delay unit
(dly0) delay, UPbd remain as low level, and the second P-type transistor (mp2) is still in open state, the voltage of node vps
Via the channel that the first P-type transistor (mp1), the second P-type transistor (mp2) are constituted, it is rapidly decreased to equal with vrh voltage.
Since vrh is equal with vbp, the gate source voltage of the 4th P-type transistor (mp4) is 0, and charging current is rapidly decreased to zero.Through
After crossing the delay of td, UPbd is jumped again as high level, shutdown the first P-type transistor (mp1), the connection of cutting vrh and vps.Deng
When next charging is opened, UPb jumps to low level from high level, while UP jumps to high level from low level, and third p-type is brilliant
Body pipe (mp3) is opened, third P-type transistor (mp3), and vps voltage increases, and the first P-type transistor (mp1) is used as current source, is opened
It opens and enters charged state.After the delay of td, UPbd is jumped again as low level, is prepared for shutdown next time.
The present embodiment accelerates the implementation of discharge current shutdown are as follows: operational amplifier (A2) is connected into unity gain buffer
Form, so that node vrl is equal with vbn1 voltage.Second delay unit (dly1) input is discharge control signal DN, exports and is
DNd.At the end of electric discharge, DN jumps to low level from high level, while DNb jumps to high level from low level, and the 5th N-type is brilliant
Body pipe (mn5) is used as discharge switch, is turned off, and the first N-type transistor of transistor (mn1) is opened.Due to the second delay unit
(dly1) delay, DNd remain as high level, and the second N-type transistor (mn2) is still in open state, the voltage of node vns1
Via the channel that the first N-type transistor (mn1), the second N-type transistor (mn2) are constituted, rapidly rise to equal with vrl.Due to
Vrl is equal with vbn1, therefore the gate source voltage of third N-type transistor (mn3) is 0, and discharge current is rapidly decreased to zero.By td
Delay after, DNd is jumped again as low level, is turned off the first N-type transistor (mn1), and the connection of vrl and vns1 is cut off.Etc. next
When a electric discharge is opened, DN jumps to high level from low level, while DNb jumps to low level, the 5th N of discharge switch from high level
Transistor npn npn (mn5) is opened, and the first N-type transistor (mn1) is closed, and vbn1 voltage reduces, third P-type transistor (mp3), the 4th
P-type transistor (mp4) is cascode current source, turns on into discharge condition.After the delay of td, DNd is jumped again as height
Level is prepared for shutdown next time.
Having the beneficial effect that for this programme is added by the way that charge shutdown accelerating circuit and electric discharge shutdown are arranged on charge pump circuit
The current potential of the current source of charge and discharge branch quickly can be changed to rapidly a suitable voltage value, so that electric by fast circuit
Stream source complete switches off, and can accelerate the shutdown of charge and discharge control signal.
Fig. 4 is the circuit diagram of the charge pump circuit of another preferred embodiment；As shown in figure 4, a kind of charge pump circuit packet
Include: biasing branch 500, reference arm 400, charge and discharge branch 300, charging shutdown accelerating circuit 200 and electric discharge shutdown accelerate electricity
Road 100；The charging signals end vbp of the reference arm 400 is connected with the charging signals end vbp of charge and discharge branch 300, the ginseng
The the first discharge signal end vbn1 for examining branch 400 is connected with the first discharge signal end vbn1 of charge and discharge branch, described with reference to branch
The second discharge signal end vbn0 on road 400 is connected with the second discharge signal end vbn0 of charge and discharge branch, the biasing branch 500
The first signal output end (not marked in figure) connected with the discharge signal end vbn1 of the reference arm signal 400；It is described inclined
The discharge signal end vbn0 of the second signal output end (not marking in figure) and the reference arm signal 400 of setting branch 500 connects
It connects；The charge and discharge branch 300 is also separately connected with charging shutdown accelerating circuit 200, electric discharge shutdown accelerating circuit 100；It is described
Charge and discharge branch 300, charging shutdown accelerating circuit 200 are all connected to the reversed of the charging control signal of the charge pump circuit
End, the charging shutdown accelerating circuit 200 is also connected to the forward end of the charging control signal of the charge pump circuit, described to fill
Discharge paths 300, electric discharge shutdown accelerating circuit 100 are all connected to the forward end of the discharge control signal of the charge pump circuit,
The electric discharge shutdown accelerating circuit 100 is also connected to the backward end of the discharge control signal of the charge pump circuit.
Charging shutdown accelerating circuit 200 includes: the first operational amplifier (A1), the first P-type transistor (mp1), the
Two P-type transistors (mp2) and the first delay unit (dly0)；The grid of first P-type transistor (mp1) is connected to the electricity
The source electrode of the forward end of the charging control signal of lotus pump circuit, first P-type transistor (mp1) is connected with charge and discharge branch,
The drain electrode of first P-type transistor (mp1) is connected with the source electrode of the second P-type transistor (mp2), second P-type transistor (mp2)
Grid and the first delay unit (dly0) output end connection, the drain electrode and the first operation of second P-type transistor (mp2)
The output end of amplifier (A1) connects, the reverse input end and first operational amplifier of first operational amplifier (A1)
(A1) output end connection, the noninverting input of first operational amplifier (A1) are connected with charge and discharge branch, and described first
The input terminal of delay unit (dly0) is connected to the backward end of the charging control signal of the charge pump circuit；
The electric discharge shutdown accelerating circuit includes: second operational amplifier (A2), the first N-type transistor (mn1), the 2nd N
Transistor npn npn (mn2) and the second delay unit (dly1)；The input terminal of second delay unit (dly1) is connected to the charge pump
The forward end of the discharge control signal of circuit, the output end of the second delay unit (dly1) connect the grid of the second N-type crystal, institute
The source electrode for stating the second N-type transistor (mn2) is connected with the output end of second operational amplifier (A2), second N-type transistor
(mn2) drain electrode is connected with the source electrode of the first N-type transistor (mn1), the drain electrode and charge and discharge of first N-type transistor (mn1)
Electric branch connection, the grid of the first N-type transistor (mn1) are connected to the reversed of the discharge control signal of the charge pump circuit
End, the reverse input end of the second operational amplifier (A2) connects with the output end of second operational amplifier (A2), and described the
The noninverting input of two operational amplifiers (A2) is connected with charge and discharge branch；
Charge and discharge branch includes: third P-type transistor (mp3), the 4th P-type transistor (mp4), third N-type transistor
(mn3), the 4th N-type transistor (mn4), the 5th N-type transistor (mn5) and power supply vdd terminal；The third P-type transistor (mp3)
Grid input be connected to the charge pump circuit charging control signal backward end, the third P-type transistor (mp3)
Source electrode is connected with power supply vdd terminal, and the drain electrode of the third P-type transistor (mp3) and the source electrode of the first P-type transistor (mp1) connect
It connects, the drain electrode of the third P-type transistor (mp3) is also connected with the source electrode of the 4th P-type transistor (mp4), and the 4th p-type is brilliant
The grid of body pipe (mp4) is connected with the charging signals end of reference arm, and the grid of the 4th P-type transistor (mp4) is also with
The noninverting input of one operational amplifier (A1) connects, and the drain electrode of the 4th P-type transistor (mp4) is connected to the charge pump circuit
Signal output end, the drain electrode of the 4th P-type transistor (mp4) also connects with the source electrode of third N-type transistor (mn3), institute
The grid for stating third N-type transistor (mn3) is connected with the first discharge signal of reference arm end, the third N-type transistor (mn3)
Grid also connected with the noninverting input of second operational amplifier (A2), the drain electrode of the third N-type transistor (mn3) and
The source electrodes of four N-type transistors (mn4) connects, the drain electrode of the third N-type transistor (mn3) also with the second N-type transistor (mn2)
Drain electrode connection, the grid of the 4th N-type transistor (mn4) connects with the second discharge signal end of reference arm, described the
The drain electrode of four N-type transistors (mn4) is connected with the source electrode of the 5th N-type transistor (mn5), the 5th N-type transistor (mn5)
Grid connection is input to the forward end of the discharge control signal of the charge pump circuit, the leakage of the 5th N-type transistor (mn5)
Pole ground connection；
Reference arm 400 includes: the 5th P-type transistor (mp5), the 6th P-type transistor (mp6), the 6th N-type transistor
(mn6), the 7th N-type transistor (mn7) and the 8th N-type transistor (mn8)；The grid of 5th P-type transistor (mp5) connects
The source electrode on ground, the 5th P-type transistor (mp5) is connected with power supply vdd terminal, the drain electrode of the 5th P-type transistor (mp5) and
The source electrode of 6th P-type transistor (mp6) connects, the grid and the 4th P-type transistor (mp4) of the 6th P-type transistor (mp6)
Grid connection, the drain electrode of the 6th P-type transistor (mp6) connects with the source electrode of the 6th N-type transistor (mn6), described the
The grid of six N-type transistors (mn6) is connected with the grid of third N-type transistor (mn3), the 6th N-type transistor (mn6)
Grid is also connected with biasing branch, and the drain electrode of the 6th N-type transistor (mn6) is connected with the source electrode of the 7th N-type transistor (mn7),
The grid of 7th N-type transistor (mn7) and the grid connection of the 4th N-type transistor (mn4), the 7th N-type transistor
(mn7) grid is also connected with biasing branch, the drain electrode and the 8th N-type transistor (mn8) of the 7th N-type transistor (mn7)
Source electrode connection, the grid of the 8th N-type transistor (mn8) connects with power supply vdd terminal, the 8th N-type transistor (mn8)
Grounded drain.
Biasing branch 500 includes: current source (Ib), resistance (Rb), the 9th N-type transistor (mn9), the tenth N-type transistor
(mn10) and the 11st N-type transistor (mn11)；One end of the current source is connected with power supply vdd terminal, the current source it is another
One end is connected with one end of resistance, and the other end of the current source is also brilliant with the grid of the 6th N-type transistor (mn6), the 9th N-type
The grid of body pipe (mn9) is separately connected, and the grid of the other end of the resistance and the tenth N-type transistor (mn10), the 7th N-type are brilliant
The grid of body pipe (mn7) is separately connected, the drain electrode of the 9th N-type transistor (mn9) and the source of the tenth N-type transistor (mn10)
Pole connection, the drain electrode of the tenth N-type transistor (mn10) connects with the source electrode of the 11st N-type transistor (mn11), and described the
The grid of 11 N-type transistors (mn11) is connected with power supply vdd terminal, the 11st N-type transistor (mn11) grounded drain.
The charge pump circuit further includes third operational amplifier (A0)；The third operational amplifier (A0) it is same
The node of the line of the drain electrode of the 6th P-type transistor (mp6) and the source electrode of the 6th N-type transistor (mn6) is connected to input terminal
On vx, the reverse input end of the third operational amplifier (A0) is connected to drain electrode and the 3rd N of the 4th P-type transistor (mp4)
On the node of the line of the source electrode of transistor npn npn (mn3), the output end of the third operational amplifier (A0) is connected to the 6th p-type
On the node vbp of the line of the grid of the grid of transistor (mp6) and the 4th P-type transistor (mp4).
It biases in branch, current source (Ib) and biasing resistor (Rb), the 9th N-type transistor (mn9) of N-type transistor, the tenth N
Transistor npn npn (mn10) forms common-source common-gate current mirror biased form, generates cascade current source voltage.The N-type of reference arm is brilliant
The 6th N-type transistor (mn6) of body pipe, the 7th N-type transistor (mn7) form cascode current source, and the N-type of charge and discharge branch is brilliant
Body pipe third N-type transistor (mn3), the 4th N-type transistor (mn4) form cascode current source.This two groups of current sources and partially
Common-source common-gate current mirror bias voltage vbn0, the vbn1 for setting branch are connected, and together constitute with common-source common-gate current mirror.5th N-type is brilliant
Body pipe (mn5) is discharge switch pipe, and the 11st N-type transistor (mn11) and the 8th N-type transistor (mn8) are the 5th N-type crystal
Manage the matching tube of (mn5).6th P-type transistor (mp6), the 4th P-type transistor (mp4) are current mirror, by third operation amplifier
Device (A0) provides biasing.The input of third operational amplifier (A0) meets drain electrode vx, the 4th P of the 6th P-type transistor (mp6) respectively
The drain electrode CPO of transistor npn npn (mp4), the feedback effect of third operational amplifier (A0) force the voltage of vx and two nodes of CPO
It is equal.The collective effect of common-source common-gate current mirror and third operational amplifier (A0) so that the electric current Iref of reference arm with fill
The charging and discharging currents of discharge paths are accurately equal, i.e. Iup=Iref=Idn.
In addition, the path that discharge current now passes through is from CPO by cascode current source third N-type transistor
(mn3), the 4th N-type transistor (mn4) arrives the 5th N-type transistor (mn5) of discharge switch, the current source passed through compared to charging current
4th P-type transistor (mp4) and the path third P-type transistor (mp3), have more third N-type transistor (mn3) transistor
Channel length, by suitably adjusting, the carrier velocity that can just make up N-type transistor is higher than P-type transistor bring
The foundation of the charging current and discharge current defect inconsistent with the turn-off time.
Charging shutdown accelerating circuit, electric discharge shutdown accelerating circuit, solving the slow-footed thinking of switch off current is: opening in electric current
After shutdown is opened, the current potential of current source source electrode is rapidly changed to rapidly a suitable voltage value, enables current source complete
Shutdown；And in order not to which additional noise can be introduced, this voltage change range cannot be too big.This current potential is exactly to allow as electric current
The null value of the gate source voltage of the transistor in source.It is grid vbp and the source of the 4th P-type transistor (mp4) for charging paths
The voltage of pole vps is equal；It is then the grid vbn1 and source electrode vns1 voltage phase of third N-type transistor (mn3) for discharge paths
Deng.What charge and discharge turned off accelerating circuit realization is exactly this thinking.
The present embodiment accelerates the implementation of discharge current shutdown are as follows: operational amplifier (A2) is connected into unity gain buffer
Form, so that vrl is equal with vbn1 voltage.Second delay unit (dly1) input is discharge control signal DN, is exported as DNd.
At the end of electric discharge, DN jumps to low level from high level, while DNb jumps to high level, the 5th N-type transistor from low level
(mn5) it is used as discharge switch, is turned off, the first N-type transistor of transistor (mn1) is opened.Due to the second delay unit (dly1)
Delay, DNd remains as high level, and the second N-type transistor (mn2) is still in open state, and the voltage of node vns1 is via
The channel that one N-type transistor (mn1), the second N-type transistor (mn2) are constituted, rapidly rises to equal with vrl.Due to vrl with
Vbn1 is equal, therefore the gate source voltage of third N-type transistor (mn3) is 0, and discharge current is rapidly decreased to zero.By prolonging for td
Shi Hou, DNd are jumped again as low level, shutdown the first N-type transistor (mn1), the connection of cutting vrl and vns1.It is put etc. next
When electric-opening, DN jumps to high level from low level, while DNb jumps to low level from high level, and the 5th N-type of discharge switch is brilliant
Body pipe (mn5) is opened, and the first N-type transistor (mn1) is closed, and vbn1 voltage reduces, third P-type transistor (mp3), the 4th p-type
Transistor (mp4) is cascode current source, turns on into discharge condition.After the delay of td, DNd is jumped again as high electricity
It is flat, it prepares for shutdown next time.
Fig. 5 is the charging and discharging currents of existing source switch charge pump circuit and charge pump circuit of the present invention showing at work
Meaning property waveform.Such as Fig. 5 as can be seen that relative to existing source switch charge pump circuit, the charging and discharging currents of charge pump of the present invention
The matching precision of charging current (Iup) and discharge current (Idn) is high at work；When switch closes, it is charged and discharged electric current energy
It establishes rapidly, and the speed established is almost the same；When switch disconnects, it is charged and discharged the speed that electric current can be turned off rapidly, and be turned off
It spends almost the same.
Having the beneficial effect that for this programme is added by the way that charge shutdown accelerating circuit and electric discharge shutdown are arranged on charge pump circuit
The current potential of the current source of charge and discharge branch quickly can be changed to rapidly a suitable voltage value, so that electric by fast circuit
Stream source complete switches off, and can accelerate the shutdown of charge and discharge control signal.Discharge current passes through passes through a N-type more than charging current
Transistor, by suitably adjusting, the carrier velocity that can just make up N-type transistor is higher than P-type transistor bring and fills
The foundation of the electric current and discharge current defect inconsistent with the turn-off time.Device in reference arm forms cascode current
Source, device forms cascode current source in charge and discharge branch.The common-source common-gate current mirror of this two groups of current sources and biasing branch
Bias voltage is connected, and together constitutes with common-source common-gate current mirror.The collective effect of common-source common-gate current mirror and third operational amplifier,
So that the electric current Iref and the charging and discharging currents of charge and discharge branch of reference arm are accurately equal.
Each technical characteristic of embodiment described above can be combined arbitrarily, for simplicity of description, not to above-mentioned reality
It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, all should be considered as described in this specification.
The embodiments described above only express several embodiments of the present invention, and the description thereof is more specific and detailed, but simultaneously
It cannot therefore be construed as limiting the scope of the patent.It should be pointed out that coming for those of ordinary skill in the art
It says, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to protection of the invention
Range.Therefore, the scope of protection of the patent of the invention shall be subject to the appended claims.
Claims (6)
1. a kind of charge pump circuit characterized by comprising biasing branch, reference arm, charge and discharge branch, charging shutdown add
Fast circuit and electric discharge shutdown accelerating circuit；
The charging signals end of the reference arm is connected with the charging signals end of charge and discharge branch, the electric discharge letter of the reference arm
Number end is connected with the discharge signal end of charge and discharge branch, the signal output end of the biasing branch and the electric discharge of the reference arm
Signal end connection；The charge and discharge branch is also separately connected with charging shutdown accelerating circuit, electric discharge shutdown accelerating circuit；
The charge and discharge branch, charging shutdown accelerating circuit are all connected to the reversed of the charging control signal of the charge pump circuit
End, the charging shutdown accelerating circuit are also connected to the forward end of the charging control signal of the charge pump circuit, the charge and discharge
Electric branch, electric discharge shutdown accelerating circuit are all connected to the forward end of the discharge control signal of the charge pump circuit, the electric discharge
Shutdown accelerating circuit is also connected to the backward end of the discharge control signal of the charge pump circuit；
The charging shutdown accelerating circuit includes the first operational amplifier, the first P-type transistor, the second P-type transistor and first
Delay unit；
The grid of first P-type transistor is connected to the forward end of the charging control signal of the charge pump circuit, and described
The source electrode of one P-type transistor is connected with charge and discharge branch, and the drain electrode of the first P-type transistor and the source electrode of the second P-type transistor connect
It connects, the output end connection of the grid and the first delay unit of second P-type transistor, the drain electrode of second P-type transistor
It is connected with the output end of the first operational amplifier, the reverse input end of first operational amplifier and first operation amplifier
The output end of device connects, and the noninverting input of first operational amplifier is connected with charge and discharge branch, and first delay is single
The input terminal of member is connected to the backward end of the charging control signal of the charge pump circuit.
2. charge pump circuit according to claim 1, which is characterized in that the electric discharge shutdown accelerating circuit includes the second fortune
Calculate amplifier, the first N-type transistor, the second N-type transistor and the second delay unit；
The input terminal of second delay unit is connected to the forward end of the discharge control signal of the charge pump circuit, and the second delay is single
The output end of member connects the grid of the second N-type crystal, the source electrode of second N-type transistor and the output of second operational amplifier
End connection, the drain electrode of second N-type transistor are connected with the source electrode of the first N-type transistor, the leakage of first N-type transistor
Pole is connected with charge and discharge branch, and the grid of the first N-type transistor is connected to the anti-of the discharge control signal of the charge pump circuit
Xiang Duan, the reverse input end of the second operational amplifier are connected with the output end of second operational amplifier, second operation
The noninverting input of amplifier is connected with charge and discharge branch.
3. charge pump circuit according to claim 2, which is characterized in that charge and discharge branch include: third P-type transistor,
4th P-type transistor, third N-type transistor, the 4th N-type transistor, the 5th N-type transistor and power supply vdd terminal；
The grid input of the third P-type transistor is connected to the backward end of the charging control signal of the charge pump circuit, institute
The source electrode for stating third P-type transistor is connected with power supply vdd terminal, drain electrode and the first P-type transistor of the third P-type transistor
The drain electrode of source electrode connection, the third P-type transistor is also connected with the source electrode of the 4th P-type transistor, the 4th P-type transistor
Grid connected with the charging signals end of reference arm, the grid of the 4th P-type transistor also with the first operational amplifier
Noninverting input connection, the drain electrode of the 4th P-type transistor are connected to the signal output end of the charge pump circuit, the 4th P
The drain electrode of transistor npn npn is also connected with the source electrode of third N-type transistor, the grid and reference arm of the third N-type transistor the
The connection of one discharge signal end, the grid of the third N-type transistor are also connected with the noninverting input of second operational amplifier, institute
The drain electrode for stating third N-type transistor is connected with the source electrode of the 4th N-type transistor, and the drain electrode of the third N-type transistor is also with
The drain electrode of two N-type transistors connects, and the grid of the 4th N-type transistor is connected with the second discharge signal end of reference arm,
The drain electrode of 4th N-type transistor is connected with the source electrode of the 5th N-type transistor, the grid connection of the 5th N-type transistor
It is input to the forward end of the discharge control signal of the charge pump circuit, the grounded drain of the 5th N-type transistor.
4. charge pump circuit according to claim 3, which is characterized in that reference arm includes: the 5th P-type transistor,
Six P-type transistors, the 6th N-type transistor, the 7th N-type transistor and the 8th N-type transistor；
The source electrode of the grounded-grid of 5th P-type transistor, the 5th P-type transistor is connected with power supply vdd terminal, and described
The drain electrode of five P-type transistors is connected with the source electrode of the 6th P-type transistor, and the grid of the 6th P-type transistor and the 4th p-type are brilliant
The grid of body pipe connects, and the drain electrode of the 6th P-type transistor is connected with the source electrode of the 6th N-type transistor, and the 6th N-type is brilliant
The grid of body pipe is connected with the grid of third N-type transistor, and the grid of the 6th N-type transistor is also connected with biasing branch,
The drain electrode of 6th N-type transistor is connected with the source electrode of the 7th N-type transistor, the grid and the 4th N-type of the 7th N-type transistor
The grid of transistor connects, and the grid of the 7th N-type transistor is also connected with biasing branch, the 7th N-type transistor
Drain electrode is connected with the source electrode of the 8th N-type transistor, and the grid of the 8th N-type transistor is connected with power supply vdd terminal, and the described 8th
N-type transistor grounded drain.
5. charge pump circuit according to claim 4, which is characterized in that biasing branch includes: current source, resistance, the 9th N
Transistor npn npn, the tenth N-type transistor and the 11st N-type transistor；
One end of the current source is connected with power supply vdd terminal, and the other end of the current source is connected with one end of resistance, the electricity
Grid of the other end in stream source also with the grid of the 6th N-type transistor, the 9th N-type transistor is separately connected, the resistance it is another
The grid of one end and the tenth N-type transistor, the 7th N-type transistor grid be separately connected, the drain electrode of the 9th N-type transistor
It being connected with the source electrode of the tenth N-type transistor, the drain electrode of the tenth N-type transistor is connected with the source electrode of the 11st N-type transistor,
The grid of 11st N-type transistor is connected with power supply vdd terminal, the 11st N-type transistor grounded drain.
6. charge pump circuit according to claim 4, which is characterized in that further include third operational amplifier；
The noninverting input of the third operational amplifier is connected to the drain electrode and the 6th N-type transistor of the 6th P-type transistor
On the node of the line of source electrode, the reverse input end of the third operational amplifier be connected to the 4th P-type transistor drain electrode and
On the node of the line of the source electrode of third N-type transistor, the output end of the third operational amplifier is connected to the 6th P-type crystal
On the node of the line of the grid of the grid of pipe and the 4th P-type transistor.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611077674.7A CN107872153B (en) | 2016-11-29 | 2016-11-29 | A kind of charge pump circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611077674.7A CN107872153B (en) | 2016-11-29 | 2016-11-29 | A kind of charge pump circuit |
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| CN107872153A CN107872153A (en) | 2018-04-03 |
| CN107872153B true CN107872153B (en) | 2019-05-24 |
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| CN111936949A (en) * | 2020-03-25 | 2020-11-13 | 深圳市汇顶科技股份有限公司 | Driving circuit and related chip |
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| CN101488710B (en) * | 2008-10-22 | 2012-06-13 | 成都国腾电子技术股份有限公司 | A charge pump circuit |
| CN101610082B (en) * | 2009-07-16 | 2011-12-07 | 哈尔滨工业大学 | Source switch-type charge pump applied to phase lock loop |
| TWI532326B (en) * | 2011-10-24 | 2016-05-01 | 聯華電子股份有限公司 | Charge pump circuit with low clock feed through |
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