CN107872007A - A kind of preparation method of chip of laser - Google Patents
A kind of preparation method of chip of laser Download PDFInfo
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- CN107872007A CN107872007A CN201610854559.XA CN201610854559A CN107872007A CN 107872007 A CN107872007 A CN 107872007A CN 201610854559 A CN201610854559 A CN 201610854559A CN 107872007 A CN107872007 A CN 107872007A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
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- Physics & Mathematics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The invention provides a kind of preparation method of chip of laser.Preparation method includes：Grow ridge ripple conducting shell, sacrifice layer；Etching sacrificial layer, forms bulge-structure, and bulge-structure defines double ridge spacing；Deposition mask layer；Etching mask layer, expose the top end face of sacrifice layer, retain the mask layer side wall of sacrifice layer both sides；Bulge-structure is removed using wet etching；Define double grooved positions and width；Etch ridge ripple conducting shell；Etching removes mask layer side wall, forms the double groove structures of double ridges；Depositing electrode layer.When the preparation method to above-mentioned chip of laser makes obtained chip of laser test, two lasers can be tested respectively.Selected for the second time in unqualified chip is selected for the first time, reduce scrapping for chip, improve chip yield, reduce chip manufacturing cost.
Description
Technical field
The present invention relates to semiconductor light electro-technical field, particularly a kind of preparation method of chip of laser.
Background technology
Distributed feedback laser is DFB (Distributed Feedback) laser, is swashed with Fabry-Perot formula formula
Light device is that the difference of FP (Fabry-Perot) laser is Bragg grating (Bragg built in Distributed Feedback Laser
Grating), therefore the resonator of Distributed Feedback Laser has the ability of selection mode.End face reflection be zero ideally,
Index coupled DFB laser device is identical and minimum in the presence of two losses of resonator with the position that bragg wavelength is symmetrical
Pattern, i.e. be bimodulus lasing in index coupled DFB laser device principle.But come at present for the Distributed Feedback Laser of reality
Say, most Distributed Feedback Laser is single mode.
In the Distributed Feedback Laser of reality, because reflection, the reflection of the end face at grating both ends be present in the end face at grating both ends
Rate is not zero, also, the reflected phase of the end face at grating both ends is not known yet.Because reflected phase has randomness, result in
Single-mode laser yield rate is relatively low, and this probability is about 20%~50%, so as to cause the yield rate of chip of laser relatively low.
The content of the invention
It is an object of the invention to provide a kind of preparation method of the higher chip of laser of yield rate.
Ridge ripple conducting shell is grown on wafer；
Sacrifice layer is grown on ridge ripple conducting shell；
Etching sacrificial layer, forms bulge-structure, and the bulge-structure defines double ridge spacing；
Deposition mask layer；
Dry etching mask layer, expose the top end face of sacrifice layer, the mask layer for retaining sacrifice layer both sides forms mask
Layer side wall；
The bulge-structure is removed using wet etching；
In two boss of the relative formation in the both ends of ridge ripple conducting shell, two boss define width of twin trenches；
According to the mask layer side wall and the boss, ridge ripple conducting shell is etched；
Mask layer side wall and boss are removed, forms the double groove structures of double ridges；
The depositing electrode layer on the double groove structures of double ridges, forms two lasers.
The double groove structure chip of laser of double ridges are obtained by the preparation method of above-mentioned chip of laser, original single
In chip of laser, on the premise of chip area is not increased too much, a standby laser is prepared.I.e. original one
Right two lasers of a first from left are prepared on chips.In chip of laser test, two tested respectively on the chip swash
Light device, to select a more excellent laser of performance as finished product.In other words, when in selecting for the first time a laser do not conform to
The chip of lattice, can be selected for the second time, and the performance of another laser is tested in selecting for the second time.In this way, for the first time
The probability that select unqualified chip still has 50% or so in selecting for the second time can be continuing with as certified products.This method
Reduce scrapping for chip, improve chip yield, reduce chip manufacturing cost.
Secondly, in the preparation method of above-mentioned chip of laser, it is not necessary to design special reticle in addition, it is possible to real
Show the making of the double trench semiconductor lasers of double ridges, simplify double ridge photoetching figure design steps, it is cost-effective.
Brief description of the drawings
Fig. 1 is the flow chart of the preparation method of the chip of laser of present embodiment；
Fig. 2 is the structure chart of the chip of laser corresponding to step S11 in Fig. 1；
Fig. 3 is the particular flow sheet of the step S12 according to Fig. 1；
Fig. 4 is the structure chart of the chip of laser corresponding to step S12 in Fig. 1；
Fig. 5 is the structure chart of the chip of laser corresponding to step S13 in Fig. 1；
Fig. 6 is the structure chart of the chip of laser corresponding to step S14 in Fig. 1；
Fig. 7 is the structure chart of the chip of laser corresponding to step S15 in Fig. 1；
Fig. 8 is the particular flow sheet of the step S16 according to Fig. 1；
Fig. 9 is the structure chart of the chip of laser corresponding to step S161 in Fig. 8；
Figure 10 is another structure chart of the chip of laser corresponding to step S161 in Fig. 8；
Figure 11 is the structure chart of the chip of laser corresponding to step S162 in Fig. 1；
Figure 12 is the structure chart of the chip of laser corresponding to step S17 in Fig. 1；
Figure 13 is the structure chart of the chip of laser corresponding to step S18 in Fig. 1.
Description of reference numerals is as follows：1st, laser；10th, wafer；11st, ridge ripple conducting shell；111st, ridge；112nd, platform；12nd, sacrifice
Layer；121st, bulge-structure；13rd, mask layer；131st, mask layer side wall；14th, the second photoresist；141st, boss；15th, groove；16th, it is electric
Pole layer.
Embodiment
Embodying the exemplary embodiment of feature of present invention and advantage will describe in detail in the following description.It should be understood that
The present invention can have various changes in different embodiments, and it is neither departed from the scope of the present invention, and theory therein
Bright and diagram is treated as purposes of discussion in itself, and is not used to the limitation present invention.
Referring to Fig. 1, the present invention provides a kind of preparation method of chip of laser, including step：
Please refer to Fig. 2, step S10, ridge ripple conducting shell 11 is grown on wafer 10.
Ridge ripple conducting shell 11 is located on wafer 10.Wafer 10 is applied to all kinds semiconductor laser.Specifically, ridge waveguide
Layer 11 generally comprises top layer, bottom.Top layer is InGaAs layers, bottom is indium phosphide (InP) layer.Wherein, the thickness 0.15 of top layer
- 0.30 micron of micron, doping concentration 1018-1019/cm3.1.5 microns -1.65 microns of the thickness of bottom, doping concentration 1017-
1018/cm3。
Step S11, sacrifice layer 12 is grown on ridge ripple conducting shell 11.
Sacrifice layer 12 is grown by metallo-organic compound chemical gaseous phase deposition.The etching selection ratio of sacrifice layer 12 is higher than ridge
The etching selection ratio of ducting layer 11.
Specifically, the material of sacrifice layer 12 elects the material compared with InGaAs with high etching selection ratio, sacrifice layer 12 as
For indium phosphide (InP) layer, 0.3 micron -2 microns of thickness, undope.
Step S12, etching sacrificial layer 12 form bulge-structure, and bulge-structure defines double ridge spacing.
Double ridge spacing are set in advance.Specifically, double ridge spacing are 10 microns -25 microns.That is, after etching, projection knot
The width of structure is 10 microns -25 microns.
Referring to Fig. 3, specifically in the present embodiment, step S12 includes：
Step S121, the first photoresist is coated on sacrifice layer, according to default double ridge spacing to the first photoresist
Exposure imaging.
Specifically in the present embodiment, the first photoresist is negative photoresist.According to default double ridge spacing, by reticle
It is spaced default double ridge spacing to place, you can realize exposure imaging to the first photoresist.And due to negative photoresist exposure
The characteristics of region is retained in development, and the region not being exposed is to be removed in development.Pass through continuous moving photoetching version
Position, often move reticle and carry out single exposure, you can the continuously adjustabe of double ridge spacing is realized, so as to reach any tune
The purpose of the double ridge spacing of section.Also, this method is easy to operate, the complicated reticle of special design structure is not required to, saves reticle
Design procedure, save the cost of manufacture of chip of laser.
Step S122, the region for not covering the first photoresist to sacrifice layer are removed.That is, the area of the first photoresist is covered
The sacrifice layer 12 in domain remains, and the width of the sacrifice layer 12 remained is double ridge spacing.
It is appreciated that etching sacrificial layer 12 can mutually be tied using dry etching, wet etching or dry etching with wet etching
Close.In step S122, the method for removing sacrifice layer 12 is not limited, it is corresponding according to the materials'use that sacrifice layer 12 selects
Conventional lithographic method, here is omitted.
Step S123, remove remaining first photoresist.
After removing the first photoresist, bulge-structure 121 is formed.The length of bulge-structure 121 is identical with double ridge spacing, i.e.,
The length of sacrifice layer 12 is 10 microns -25 microns, as shown in Figure 4.
In step s 12, although using photolithography plate, the photolithography plate in this step is only common two panels photolithography plate,
Without designing special reticle in addition, it is possible to realize the double ridge spacing of definition, simplify double ridge photoetching figure design steps, section
The about cost of manufacture of chip of laser.
Step S13, deposition mask layer 13.
As shown in figure 5, in the surface deposition mask layer of chip of laser, the surface of mask layer covering bulge-structure 121 and
The surface of ridge ripple conducting shell 11.Mask layer 13 etches for ridge.The thickness of mask layer 13 will determine ridge waveguide width, its thickness 2
- 4.5 microns of micron.
The material of mask layer 13 can use oxide, such as SiO2.Or in other embodiments, mask layer 13 also may be used
Think the materials such as amorphous carbon APF (amorphous carbon).
Referring to Fig. 6, step S14, dry etching mask layer 13, expose the top end face of sacrifice layer 12, retain and sacrifice
The mask layer of 12 both sides of layer forms mask layer side wall 131.
Dry etching is carried out to mask layer 13, dry etching can realize anisotropic etching, can remove ridge ripple conducting shell 11
Mask layer 13 on the upper and top end face of sacrifice layer 12, exposes the top end face of sacrifice layer 12, and the table of ridge ripple conducting shell 11
Show out, retain the mask layer side wall 131 of the both sides of sacrifice layer 12.
When mask layer 13 is oxide skin(coating), etching gas are the gas of fluoroform and oxygen, fluoroform and oxygen
Volume ratio 10:1-40:1.Also, dry etching primary condition is with parameter：Air pressure is the millitorr of 0 millitorr~50, is biased as 0 volt
~600 volts, etching gas total flow is 100 standard milliliters/minute~500 standard milliliters/minute.
In other embodiments, when being amorphous carbon such as mask layer 13, etching gas are from hydrogen bromide and oxygen conduct
Etching gas, gas volume fractions 1:1-30:1.Also, dry etching primary condition is with parameter：Air pressure is the milli of 0 millitorr~50
Support, is biased as 0 volt~600 volts, etching gas total flow is 100 standard milliliters/minute~500 standard milliliters/minute.
Referring to Fig. 7, step S15, bulge-structure 121 is removed using wet etching.
Wet etching can remove the bulge-structure 121 between two mask layer side walls 131 more clean, and carve
Ridge ripple conducting shell 11 is not caused to damage during erosion.
The etching selection ratio of bulge-structure 121 is higher than the etching selection ratio of the ridge ripple conducting shell 11.Specifically, bulge-structure
121 be layer of InP, and the corrosive liquid of wet etching is hydrochloric acid or the mixed liquor of hydrobromic acid and phosphoric acid, and hydrochloric acid or hydrobromic acid and phosphoric acid
Volume ratio be 2:1.Also, 20 DEG C ± 2 DEG C of corrosive liquid temperature, etching time is set according to the thickness of bulge-structure 121, greatly
About -444 seconds 67 seconds.
Step S16, in two boss of the relative formation in the both ends of ridge ripple conducting shell, two boss define the width of double grooves
Degree.
Double grooved positions are according to design positioned at the both sides of wafer 10.Two boss are formed relatively at the both ends of ridge ripple conducting shell,
Two boss are respectively width of twin trenches with the distance between two mask layer side walls.Width of twin trenches according to setting in advance
Meter setting, specifically, width of twin trenches are 60 microns -90 microns.
Referring to Fig. 8, specifically in the present embodiment, step S16 includes：
Fig. 9 and Figure 10, step S161 are referred to, the second photoresist is coated on ridge ripple conducting shell 11 and mask layer side wall 131
14。
Second photoresist 14 can be positive photoresist or negative photoresist.
Step S162, development is exposed to the second photoresist according to default width of twin trenches, forms two boss.
Two boss 141 formed by the second photoresist 14 are formed in the relevant position at the both ends of ridge ripple conducting shell 11.
Equally, in step s 16, although using photolithography plate to the exposure imaging of the second photoresist 14, in this step
Photolithography plate can be common photolithography plate, without designing special reticle in addition, it is possible to realize the double grooved positions of definition
And width, double ridge photoetching figure design steps are simplified, it is cost-effective.
Figure 11, step S17 are referred to, according to mask layer side wall and boss, etches ridge ripple conducting shell.
Because the surface of ridge ripple conducting shell is provided with two boss 141 and two mask layer side walls 131, when etching ridge ripple conducting shell
When 11, the position for not being provided with boss 141 and mask layer side wall 131 is performed etching, makes ridge ripple conducting shell 11 in boss 141
And the corresponding opening position of mask layer side wall 131 has residue.
Etching ridge ripple conducting shell 11 is using dry etching by the way of wet etching is combined.The etching gas that dry etching is selected
Body is methane and hydrogen, and the gas volume fractions of methane and hydrogen are 1:3-1:8.Dry etching primary condition is with parameter：Gas
Press as the millitorr of 2 millitorrs~20, bias as 200 volts~600 volts, the standard milli of 45 standard milliliters of etching gas total flow/minute~130
Liter/min.For wet etching from the mixed liquor of hydrobromic acid and phosphoric acid, the volume ratio of hydrobromic acid and phosphoric acid is 2:1, corrosive liquid temperature
20 DEG C ± 2 DEG C, etching time about 330s.
Step S18, mask layer side wall and boss are removed, form the double groove structures of double ridges.
Refer to Figure 12, after mask layer side wall 131 and boss 141 are removed, on wafer 10 formed two ridges 111 and
Platform 112 positioned at two ridge both sides forms the double groove structures of double ridges.Groove 15 is formed between platform 112 and ridge 111.Two ridges
There are two grooves 15 111 both sides.
Dry etching, when mask layer side wall 131 is oxide skin(coating), etching gas three are carried out to mask layer side wall 131
The gas volume fractions 10 of fluoromethane and oxygen, fluoroform and oxygen:1-40:1.Also, dry etching primary condition and ginseng
Number is：Air pressure is the millitorr of 0 millitorr~50, is biased as 0 volt~600 volts, etching gas total flow be 100 standard milliliters/minute~
500 standard milliliters/minute.
In other embodiments, when mask layer side wall 131 is amorphous carbon layer, etching gas are hydrogen bromide and oxygen,
The gas volume fractions 1 of hydrogen bromide and oxygen:1-30:1.Also, air pressure is the millitorr of 0 millitorr~50, is biased as 0 volt~600 volts,
Etching gas total flow is 100 standard milliliters/minute~500 standard milliliters/minute.
It is appreciated that the method that mask layer side wall 131 can also use dry etching to be combined with wet etching removes.
Boss 141 is that the second photoresist 14 is formed, and boss 141 can be removed by exposure imaging.
Figure 13, step S19 please be participate in, the depositing electrode layer 16 on the double groove structures of double ridges, forms two lasers 1.
After the double groove structures of double ridges are formed, according to passivation layer deposition, electrical contact window makes.P side electrode deposits, wafer
It is thinned, and the chip of laser of standard laser chip manufacture craft completion two lasers of single chip of N faces electrode deposition
Making.As illustrated, forming right two lasers of a first from left in single chip, that is, two formed on chip of laser swash
Light device.
In chip of laser test, two lasers testing respectively on the chip of laser, to select performance more excellent
A laser as finished product.In other words, when a underproof chip of laser in selecting for the first time, can be carried out
It is secondary to select, the performance of another laser is tested in selecting for the second time.In this way, unqualified chip is selected second for the first time
It is secondary select in still have 50% or so probability turn into certified products can be continuing with.This approach reduces scrapping for chip, carry
High chip yield, reduces chip manufacturing cost.
Although describing the present invention with reference to several exemplary embodiments, it is to be understood that, term used be explanation and
Exemplary and nonrestrictive term.Due to the present invention can be embodied in a variety of forms without departing from invention spirit or
Essence, it should therefore be appreciated that above-mentioned embodiment is not limited to any foregoing details, and should be limited in appended claims
Widely explained in spirit and scope, thus the whole changes fallen into claim or its equivalent scope and remodeling all should be with
Attached claim is covered.
Claims (10)
1. a kind of preparation method of chip of laser, including step：
Ridge ripple conducting shell is grown on wafer；
Sacrifice layer is grown on ridge ripple conducting shell；
Etching sacrificial layer, forms bulge-structure, and the bulge-structure defines double ridge spacing；
Deposition mask layer；
Dry etching mask layer, expose the top end face of sacrifice layer, the mask layer for retaining sacrifice layer both sides forms mask layer side
Wall；
The bulge-structure is removed using wet etching；
In two boss of the relative formation in the both ends of ridge ripple conducting shell, two boss define width of twin trenches；
According to the mask layer side wall and the boss, ridge ripple conducting shell is etched；
Mask layer side wall and boss are removed, forms the double groove structures of double ridges；
The depositing electrode layer on the double groove structures of double ridges, forms two lasers.
2. preparation method according to claim 1, it is characterised in that etching sacrificial layer, form bulge-structure, the projection
Structure defines the step of double ridge spacing and is：
The first photoresist is coated on sacrifice layer, according to default double ridge spacing to the first photoresist exposure imaging；
The region for not covering the first photoresist to sacrifice layer is removed；
Remove remaining first photoresist.
3. preparation method according to claim 2, it is characterised in that first photoresist is negative photoresist.
4. preparation method according to claim 1, it is characterised in that relative formation two is convex in the both sides of ridge ripple conducting shell
Platform, the step of two boss define width of twin trenches be：
The second photoresist is coated on ridge ripple conducting shell and mask layer side wall；
Development is exposed to the second photoresist according to default width of twin trenches, forms two boss.
5. preparation method according to claim 1, it is characterised in that after etching ridge ripple conducting shell, the shape on the wafer
Into two ridges and the platform positioned at two ridge both sides, the groove is formed between the ridge and the platform.
6. preparation method according to claim 1, it is characterised in that the sacrifice layer passes through metallo-organic compound chemistry
Gaseous phase deposition grows.
7. preparation method according to claim 1, it is characterised in that when carrying out dry etching to mask layer, the mask
Layer is oxide skin(coating), and etching gas are the gas volume fractions 10 of fluoroform and oxygen, fluoroform and oxygen:1-40:1.
8. preparation method according to claim 1, it is characterised in that when carrying out dry etching to mask layer, the mask
Layer is amorphous carbon layer, and etching gas are the gas volume fractions 1 of hydrogen bromide and oxygen, hydrogen bromide and oxygen:1-30:1.
9. preparation method according to claim 1, it is characterised in that the etching selection ratio of the sacrifice layer is higher than the ridge
The etching selection ratio of ducting layer.
10. preparation method according to claim 1, it is characterised in that the sacrifice layer is phosphorization phosphide indium layer, and the wet method is rotten
The corrosive liquid of erosion is hydrochloric acid or the mixed liquor of hydrobromic acid and phosphoric acid, and the volume ratio of hydrochloric acid or hydrobromic acid and phosphoric acid is 2:1.
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| CN110875575A (en) * | 2018-08-31 | 2020-03-10 | 山东华光光电子股份有限公司 | Method for manufacturing narrow ridge structure of semiconductor laser |
| CN112382924A (en) * | 2020-11-12 | 2021-02-19 | 中国科学院半导体研究所 | Double-waveguide distributed feedback semiconductor laser and laser generation method |
| CN118299930A (en) * | 2024-06-06 | 2024-07-05 | 苏州长光华芯光电技术股份有限公司 | Preparation method of semiconductor light-emitting structure |
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| CN107872007B (en) | 2019-11-22 |
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