CN107872007B - A kind of production method of chip of laser - Google Patents
A kind of production method of chip of laser Download PDFInfo
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- CN107872007B CN107872007B CN201610854559.XA CN201610854559A CN107872007B CN 107872007 B CN107872007 B CN 107872007B CN 201610854559 A CN201610854559 A CN 201610854559A CN 107872007 B CN107872007 B CN 107872007B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
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- Physics & Mathematics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The present invention provides a kind of production methods of chip of laser.Production method includes: growth ridge ripple conducting shell, sacrificial layer；Etching sacrificial layer, forms bulge-structure, and bulge-structure defines double ridge spacing；Deposition mask layer；Etching mask layer exposes the top end face of sacrificial layer, retains the mask layer side wall of sacrificial layer two sides；Bulge-structure is removed using wet etching；Define double grooved positions and width；Etch ridge ripple conducting shell；Etching removal mask layer side wall forms the double groove structures of double ridges；Depositing electrode layer.When the prepared chip of laser of production method to above-mentioned chip of laser is tested, two lasers can be tested respectively.It is selected for the second time in selecting unqualified chip for the first time, reduces scrapping for chip, improve chip yield, reduce chip manufacturing cost.
Description
Technical field
The present invention relates to semiconductor light electro-technical field, especially a kind of production method of chip of laser.
Background technique
Distributed feedback laser, that is, DFB (Distributed Feedback) laser swashs with Fabry-Perot formula formula
Light device, that is, FP (Fabry-Perot) laser is the difference is that Bragg grating (Bragg built in Distributed Feedback Laser
Grating), thus the resonant cavity of Distributed Feedback Laser have selection mode ability.End face reflection be zero ideally,
Index coupled DFB laser device with there are two losses of resonator are identical and minimum on the symmetrical position of bragg wavelength
Mode, that is, be bimodulus lasing in index coupled DFB laser device principle.But actual Distributed Feedback Laser is come at present
It says, most Distributed Feedback Laser is single mode.
In actual Distributed Feedback Laser, because there is reflection, the reflection of the end face at grating both ends in the end face at grating both ends
Rate is not zero, also, the reflected phase of the end face at grating both ends is not known yet.Since reflected phase has randomness, result in
Single-mode laser yield rate is lower, this probability is about 20%~50%, lower so as to cause the yield rate of chip of laser.
Summary of the invention
The purpose of the present invention is to provide a kind of production methods of the higher chip of laser of yield rate.
Ridge ripple conducting shell is grown on wafer；
Sacrificial layer is grown on ridge ripple conducting shell；
Etching sacrificial layer, forms bulge-structure, and the bulge-structure defines double ridge spacing；
Deposition mask layer；
Dry etching mask layer exposes the top end face of sacrificial layer, and the mask layer for retaining sacrificial layer two sides forms exposure mask
Layer side wall；
The bulge-structure is removed using wet etching；
In two boss of the opposite formation in the both ends of ridge ripple conducting shell, two boss define width of twin trenches；
According to the mask layer side wall and the boss, ridge ripple conducting shell is etched；
Mask layer side wall and boss are removed, the double groove structures of double ridges are formed；
The depositing electrode layer on the double groove structures of double ridges, forms two lasers.
The double groove structure chip of laser of double ridges are obtained by the production method of above-mentioned chip of laser, original single
In chip of laser, under the premise of not increasing chip area too much, a standby laser is prepared.I.e. original one
Right two lasers of a first from left are prepared on chips.In chip of laser test, two tested on the chip respectively swash
Light device, come select performance more preferably a laser as finished product.In other words, when in selecting for the first time a laser do not conform to
The chip of lattice can be selected for the second time, and the performance of another laser is tested in selecting for the second time.In this way, for the first time
Select unqualified chip still has 50% or so probability that can continue to use as qualified product in selecting for the second time.This method
Reduce scrapping for chip, improve chip yield, reduces chip manufacturing cost.
Secondly, not needing in addition to design special reticle in the production method of above-mentioned chip of laser, so that it may real
The production for having showed the double trench semiconductor lasers of double ridges simplifies double ridge photoetching figure design steps, save the cost.
Detailed description of the invention
Fig. 1 is the flow chart of the production method of the chip of laser of present embodiment；
Fig. 2 is the structure chart of chip of laser corresponding to step S11 in Fig. 1；
Fig. 3 is the specific flow chart according to step S12 shown in FIG. 1；
Fig. 4 is the structure chart of chip of laser corresponding to step S12 in Fig. 1；
Fig. 5 is the structure chart of chip of laser corresponding to step S13 in Fig. 1；
Fig. 6 is the structure chart of chip of laser corresponding to step S14 in Fig. 1；
Fig. 7 is the structure chart of chip of laser corresponding to step S15 in Fig. 1；
Fig. 8 is the specific flow chart according to step S16 shown in FIG. 1；
Fig. 9 is the structure chart of chip of laser corresponding to step S161 in Fig. 8；
Figure 10 is another structure chart of chip of laser corresponding to step S161 in Fig. 8；
Figure 11 is the structure chart of chip of laser corresponding to step S162 in Fig. 1；
Figure 12 is the structure chart of chip of laser corresponding to step S17 in Fig. 1；
Figure 13 is the structure chart of chip of laser corresponding to step S18 in Fig. 1.
The reference numerals are as follows: 1, laser；10, wafer；11, ridge ripple conducting shell；111, ridge；112, platform；12, it sacrifices
Layer；121, bulge-structure；13, mask layer；131, mask layer side wall；14, the second photoresist；141, boss；15, groove；16, electric
Pole layer.
Specific embodiment
The exemplary embodiment for embodying feature of present invention and advantage will describe in detail in the following description.It should be understood that
The present invention can have various variations in different embodiments, neither depart from the scope of the present invention, and theory therein
Bright and diagram inherently is illustrated as being used, rather than to limit the present invention.
Referring to Fig. 1, the present invention provides a kind of production method of chip of laser, comprising steps of
Please refer to Fig. 2, step S10, ridge ripple conducting shell 11 is grown on wafer 10.
Ridge ripple conducting shell 11 is located on wafer 10.Wafer 10 is suitable for various types semiconductor laser.Specifically, ridge waveguide
Layer 11 generally comprises top layer, bottom.Top layer is InGaAs layers, bottom is indium phosphide (InP) layer.Wherein, the thickness 0.15 of top layer
- 0.30 micron of micron, doping concentration 1018-1019/cm3.1.5 microns -1.65 microns of the thickness of bottom, doping concentration 1017-
1018/cm3。
Step S11 grows sacrificial layer 12 on ridge ripple conducting shell 11.
Sacrificial layer 12 is grown by metallo-organic compound chemical gaseous phase deposition.The etching selection ratio of sacrificial layer 12 is higher than ridge
The etching selection ratio of ducting layer 11.
Specifically, the material of sacrificial layer 12 is selected as the material compared with InGaAs with high etching selection ratio, sacrificial layer 12
For indium phosphide (InP) layer, 0.3 micron -2 microns of thickness, undope.
Step S12, etching sacrificial layer 12 form bulge-structure, and bulge-structure defines double ridge spacing.
Double ridge spacing are preset.Specifically, double ridge spacing are 10 microns -25 microns.That is, after etching, protrusion knot
The width of structure is 10 microns -25 microns.
Referring to Fig. 3, specifically in the present embodiment, step S12 includes:
Step S121 carries out the first photoresist of coating, according to preset double ridge spacing to the first photoresist on sacrificial layer
Exposure development.
Specifically in the present embodiment, the first photoresist is negative photoresist.According to preset double ridge spacing, by reticle
It is spaced preset double ridge spacing to place, can realize exposure development to the first photoresist.And due to negative photoresist exposure
The characteristics of region is retained in development, and the region not being exposed is to be removed in development.Pass through continuous moving photoetching version
Position, reticle of every movement carries out single exposure, the continuously adjustable of double ridge spacing can be realized, to reach any tune
Save the purpose of double ridge spacing.Also, this method is easy to operate, is not required to the reticle of special design structure complexity, saves reticle
Design procedure, save the cost of manufacture of chip of laser.
Step S122, the region for not covering the first photoresist to sacrificial layer are removed.That is, the area of the first photoresist of covering
The sacrificial layer 12 in domain remains, and the width of the sacrificial layer 12 remained is double ridge spacing.
It is mutually tied it is appreciated that dry etching, wet etching or dry etching can be used in etching sacrificial layer 12 with wet etching
It closes.In step S122, to removal sacrificial layer 12 method without limitation, according to sacrificial layer 12 select materials'use it is corresponding
Conventional lithographic method, details are not described herein again.
Step S123 removes remaining first photoresist.
After removing the first photoresist, bulge-structure 121 is formed.The length of bulge-structure 121 is identical as double ridge spacing, i.e.,
The length of sacrificial layer 12 is 10 microns -25 microns, as shown in Figure 4.
In step s 12, although using photolithography plate, the photolithography plate in this step is only common two panels photolithography plate,
Without in addition designing special reticle, so that it may realize the double ridge spacing of definition, simplify double ridge photoetching figure design steps, section
The about cost of manufacture of chip of laser.
Step S13, deposition mask layer 13.
As shown in figure 5, in the surface deposition mask layer of chip of laser, mask layer cover bulge-structure 121 surface and
The surface of ridge ripple conducting shell 11.Mask layer 13 is etched for ridge.The thickness of mask layer 13 will determine ridge waveguide width, thickness 2
- 4.5 microns of micron.
The material of mask layer 13 can use oxide, such as SiO2.Or in other embodiments, mask layer 13 can also
Think the materials such as amorphous carbon APF (amorphous carbon).
Referring to Fig. 6, step S14, dry etching mask layer 13, expose the top end face of sacrificial layer 12, retains and sacrifice
The mask layer of 12 two sides of layer forms mask layer side wall 131.
Dry etching is carried out to mask layer 13, dry etching is able to achieve anisotropic etching, can remove ridge ripple conducting shell 11
Mask layer 13 on the upper and top end face of sacrificial layer 12 makes the exposing of top end face and the table of ridge ripple conducting shell 11 of sacrificial layer 12
It shows out, retains the mask layer side wall 131 of 12 two sides of sacrificial layer.
When mask layer 13 is oxide skin(coating), etching gas is fluoroform and oxygen, the gas of fluoroform and oxygen
Volume ratio 10:1-40:1.Also, dry etching primary condition and parameter are as follows: air pressure is 0 millitorr~50 millitorrs, and bias is 0 volt
~600 volts, etching gas total flow is 100 standard milliliters/minute~500 standard milliliters/minute.
In other embodiments, when being amorphous carbon such as mask layer 13, etching gas selects hydrogen bromide and oxygen conduct
Etching gas, gas volume fractions 1:1-30:1.Also, dry etching primary condition and parameter are as follows: air pressure is 0 millitorr~50 millis
Support, bias are 0 volt~600 volts, and etching gas total flow is 100 standard milliliters/minute~500 standard milliliters/minute.
Referring to Fig. 7, step S15, removes bulge-structure 121 using wet etching.
Wet etching can remove the bulge-structure 121 between two mask layer side walls 131 more clean, and carve
Ridge ripple conducting shell 11 is not damaged during erosion.
The etching selection ratio of bulge-structure 121 is higher than the etching selection ratio of the ridge ripple conducting shell 11.Specifically, bulge-structure
121 be layer of InP, and the corrosive liquid of wet etching is the mixed liquor of hydrochloric acid or hydrobromic acid and phosphoric acid, and hydrochloric acid or hydrobromic acid and phosphoric acid
Volume ratio be 2:1.Also, 20 DEG C ± 2 DEG C of corrosive liquid temperature, etching time is set according to the thickness of bulge-structure 121, greatly
About -444 seconds 67 seconds.
Step S16, in two boss of the opposite formation in the both ends of ridge ripple conducting shell, two boss define the width of double grooves
Degree.
Double grooved positions are located at the two sides of wafer 10 according to design.Two boss are formed relatively at the both ends of ridge ripple conducting shell,
Two boss are respectively width of twin trenches with the distance between two mask layer side walls.Width of twin trenches according to setting in advance
Meter setting, specifically, width of twin trenches are 60 microns -90 microns.
Referring to Fig. 8, specifically in the present embodiment, step S16 includes:
Fig. 9 and Figure 10, step S161 are please referred to, coats the second photoresist on ridge ripple conducting shell 11 and mask layer side wall 131
14。
Second photoresist 14 can be positive photoresist or negative photoresist.
Step S162 is exposed development to the second photoresist according to preset width of twin trenches, forms two boss.
Two boss 141 formed by the second photoresist 14 are formed in the corresponding position at the both ends of ridge ripple conducting shell 11.
Equally, in step s 16, although using photolithography plate to 14 exposure development of the second photoresist, in this step
Photolithography plate can be common photolithography plate, without in addition designing special reticle, so that it may realize the double grooved positions of definition
And width, simplify double ridge photoetching figure design steps, save the cost.
Figure 11, step S17 are please referred to, according to mask layer side wall and boss, etches ridge ripple conducting shell.
Due to being set on the surface of ridge ripple conducting shell there are two boss 141 and two mask layer side walls 131, when etching ridge ripple conducting shell
When 11, the position for not being equipped with boss 141 and mask layer side wall 131 is performed etching, makes ridge ripple conducting shell 11 in boss 141
And there is residue at the corresponding position of mask layer side wall 131.
Etching ridge ripple conducting shell 11 is using dry etching in such a way that wet etching combines.The etching gas that dry etching is selected
Body is methane and hydrogen, and the gas volume fractions of methane and hydrogen are 1:3-1:8.Dry etching primary condition and parameter are as follows: gas
Pressure is 2 millitorrs~20 millitorrs, and bias is 200 volts~600 volts, 45 standard milliliters of etching gas total flow/minute~130 standards milli
Liter/min.The volume ratio of the mixed liquor of wet etching selection hydrobromic acid and phosphoric acid, hydrobromic acid and phosphoric acid is 2:1, corrosive liquid temperature
20 DEG C ± 2 DEG C, etching time about 330s.
Step S18 removes mask layer side wall and boss, forms the double groove structures of double ridges.
Please refer to Figure 12, after mask layer side wall 131 and boss 141 are removed, formed on wafer 10 two ridges 111 and
Platform 112 positioned at two ridge two sides constitutes the double groove structures of double ridges.Groove 15 is formed between platform 112 and ridge 111.Two ridges
There are two grooves 15 for 111 two sides.
Dry etching is carried out to mask layer side wall 131, when mask layer side wall 131 is oxide skin(coating), etching gas three
The gas volume fractions 10:1-40:1 of fluoromethane and oxygen, fluoroform and oxygen.Also, dry etching primary condition and ginseng
Number are as follows: air pressure be 0 millitorr~50 millitorrs, bias be 0 volt~600 volts, etching gas total flow be 100 standard milliliters/minute~
500 standard milliliters/minute.
In other embodiments, when mask layer side wall 131 be amorphous carbon layer, etching gas be hydrogen bromide and oxygen,
The gas volume fractions 1:1-30:1 of hydrogen bromide and oxygen.Also, air pressure is 0 millitorr~50 millitorrs, and bias is 0 volt~600 volts,
Etching gas total flow is 100 standard milliliters/minute~500 standard milliliters/minute.
It is appreciated that mask layer side wall 131 can also be using the method removal that dry etching is combined with wet etching.
Boss 141 is the formation of the second photoresist 14, and boss 141 can be removed by exposure development.
Figure 13, step S19 please be participate in, the depositing electrode layer 16 on the double groove structures of double ridges forms two lasers 1.
After forming the double groove structures of double ridges, according to passivation layer deposition, it is in electrical contact window production.P side electrode deposition, wafer
Thinned and the face N electrode deposition standard laser chip manufacture craft completes the chip of laser of two lasers of single chip
Production.As shown, forming right two lasers of a first from left in single chip, that is, two formed on chip of laser swash
Light device.
In chip of laser test, two lasers on the chip of laser are tested, respectively to select performance more excellent
A laser as finished product.In other words, when a underproof chip of laser in selecting for the first time, can be carried out
It is secondary to select, the performance of another laser is tested in selecting for the second time.In this way, selecting unqualified chip second for the first time
It is secondary select in still have 50% or so probability become qualified product can continue to use.This approach reduces scrapping for chip, mention
High chip yield, reduces chip manufacturing cost.
Although describing the present invention with reference to several exemplary embodiments, it is to be understood that, term used be explanation and
Term exemplary, and not restrictive.Due to the present invention can be embodied in a variety of forms without departing from invention spirit or
Essence, it should therefore be appreciated that above embodiment is not limited to any of the foregoing details, and should be defined by the appended claims
The whole change and modification widely explained, therefore fallen into claim or its equivalent scope in spirit and scope all should be with
Attached claim is covered.
Claims (10)
1. a kind of production method of chip of laser, comprising steps of
Ridge ripple conducting shell is grown on wafer；
Sacrificial layer is grown on ridge ripple conducting shell；
Etching sacrificial layer, forms bulge-structure, and the bulge-structure defines double ridge spacing；
Deposition mask layer；
Dry etching mask layer exposes the top end face of sacrificial layer, and the mask layer for retaining sacrificial layer two sides forms mask layer side
Wall；
The bulge-structure is removed using wet etching；
In two boss of the opposite formation in the both ends of ridge ripple conducting shell, two boss define width of twin trenches；
According to the mask layer side wall and the boss, ridge ripple conducting shell is etched；
Mask layer side wall and boss are removed, the double groove structures of double ridges are formed；
The depositing electrode layer on the double groove structures of double ridges, forms two lasers.
2. manufacturing method according to claim 1, which is characterized in that etching sacrificial layer forms bulge-structure, the protrusion
Structure defines the step of double ridge spacing are as follows:
The first photoresist is coated on sacrificial layer, according to preset double ridge spacing to the first photoresist exposure development；
The region for not covering the first photoresist to sacrificial layer is removed；
Remove remaining first photoresist.
3. production method according to claim 2, which is characterized in that first photoresist is negative photoresist.
4. manufacturing method according to claim 1, which is characterized in that in the two sides of ridge ripple conducting shell, opposite formation two is convex
The step of platform, two boss define width of twin trenches are as follows:
The second photoresist is coated on ridge ripple conducting shell and mask layer side wall；
Development is exposed to the second photoresist according to preset width of twin trenches, forms two boss.
5. manufacturing method according to claim 1, which is characterized in that after etching ridge ripple conducting shell, the shape on the wafer
At two ridges and the platform positioned at two ridge two sides, the groove is formed between each ridge platform adjacent thereto.
6. manufacturing method according to claim 1, which is characterized in that the sacrificial layer passes through metallo-organic compound chemistry
Gaseous phase deposition growth.
7. manufacturing method according to claim 1, which is characterized in that when carrying out dry etching to mask layer, the exposure mask
Layer is oxide skin(coating), and etching gas is fluoroform and oxygen, the gas volume fractions 10:1-40:1 of fluoroform and oxygen.
8. manufacturing method according to claim 1, which is characterized in that when carrying out dry etching to mask layer, the exposure mask
Layer is amorphous carbon layer, and etching gas is hydrogen bromide and oxygen, the gas volume fractions 1:1-30:1 of hydrogen bromide and oxygen.
9. manufacturing method according to claim 1, which is characterized in that the etching selection ratio of the sacrificial layer is higher than the ridge
The etching selection ratio of ducting layer.
10. manufacturing method according to claim 1, which is characterized in that the sacrificial layer is phosphorization phosphide indium layer, and the wet process is rotten
The corrosive liquid of erosion is the mixed liquor of hydrochloric acid or hydrobromic acid and phosphoric acid, and the volume ratio of hydrochloric acid or hydrobromic acid and phosphoric acid is 2:1.
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| CN110875575B (en) * | 2018-08-31 | 2021-04-06 | 山东华光光电子股份有限公司 | Method for manufacturing narrow ridge structure of semiconductor laser |
| CN112382924B (en) * | 2020-11-12 | 2022-04-22 | 中国科学院半导体研究所 | Double-waveguide distributed feedback semiconductor laser and laser generation method |
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| CN1577888A (en) * | 2003-07-24 | 2005-02-09 | 三星电子株式会社 | Vertical double-channel silicon-on-insulator transistor and method of manufacturing the same |
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