CN107868979B - 一种基于恒拉速控制结构的硅单晶直径控制方法 - Google Patents
一种基于恒拉速控制结构的硅单晶直径控制方法 Download PDFInfo
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- CN107868979B CN107868979B CN201710772913.9A CN201710772913A CN107868979B CN 107868979 B CN107868979 B CN 107868979B CN 201710772913 A CN201710772913 A CN 201710772913A CN 107868979 B CN107868979 B CN 107868979B
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
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Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
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CN108914201B (zh) * | 2018-08-29 | 2019-09-27 | 西安理工大学 | 一种直拉硅单晶生长过程工艺参数优化方法 |
CN109056056B (zh) * | 2018-09-14 | 2019-07-23 | 西安理工大学 | 一种直拉硅单晶生长过程热场模型辨识方法 |
CN109559298A (zh) * | 2018-11-14 | 2019-04-02 | 电子科技大学中山学院 | 一种基于深度学习的乳液泵缺陷检测的方法 |
CN110009094B (zh) * | 2019-01-11 | 2022-09-16 | 西安理工大学 | 一种直拉硅单晶提拉速度-晶体直径辨识模型建模方法 |
CN111400862B (zh) * | 2020-02-11 | 2024-02-23 | 山东天岳先进科技股份有限公司 | 一种预测晶体热场分布的方法、装置以及设备 |
CN111224593B (zh) * | 2020-02-20 | 2021-12-31 | 浙江理工大学 | 基于差分进化算法优化的模糊自适应滑模控制方法及系统 |
CN114836823B (zh) * | 2022-06-08 | 2024-03-19 | 连城凯克斯科技有限公司 | 一种单晶硅熔炉晶体生长直径预测方法 |
CN115491756B (zh) * | 2022-11-18 | 2023-03-10 | 浙江晶盛机电股份有限公司 | 晶炉晶体生长调控方法、装置、计算机设备和存储介质 |
CN117668740A (zh) * | 2024-02-02 | 2024-03-08 | 浙江晶盛机电股份有限公司 | 蓝宝石的长速异常检测方法、装置、电子装置和存储介质 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102830625A (zh) * | 2012-09-10 | 2012-12-19 | 江苏科技大学 | 基于神经网络预测控制的过程控制系统及方法 |
WO2015142418A1 (en) * | 2014-03-17 | 2015-09-24 | Raytheon Company | High-availability isar image formation |
CN107045289A (zh) * | 2017-06-05 | 2017-08-15 | 杭州电子科技大学 | 一种电加热炉温度的非线性神经网络优化pid控制方法 |
CN107526294A (zh) * | 2017-07-26 | 2017-12-29 | 西安理工大学 | 一种非线性时滞动态系统模型智能辨识方法 |
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102830625A (zh) * | 2012-09-10 | 2012-12-19 | 江苏科技大学 | 基于神经网络预测控制的过程控制系统及方法 |
WO2015142418A1 (en) * | 2014-03-17 | 2015-09-24 | Raytheon Company | High-availability isar image formation |
CN107045289A (zh) * | 2017-06-05 | 2017-08-15 | 杭州电子科技大学 | 一种电加热炉温度的非线性神经网络优化pid控制方法 |
CN107526294A (zh) * | 2017-07-26 | 2017-12-29 | 西安理工大学 | 一种非线性时滞动态系统模型智能辨识方法 |
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Effective date of registration: 20210917 Address after: 710000 room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi Province Patentee after: Xi'an yisiwei Material Technology Co.,Ltd. Patentee after: Xi'an yisiwei Equipment Technology Co.,Ltd. Address before: E2-002, Science Park, Xi'an University of technology, No.26, gazelle Road, Zhangba Street office, high tech Zone, Xi'an City, Shaanxi Province, 710077 Patentee before: Xi'an yisiwei Equipment Technology Co.,Ltd. |
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Address after: 710000 room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi Province Patentee after: Xi'an Yisiwei Material Technology Co.,Ltd. Patentee after: Xi'an Xinhui Equipment Technology Co.,Ltd. Address before: 710000 room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi Province Patentee before: Xi'an yisiwei Material Technology Co.,Ltd. Patentee before: Xi'an yisiwei Equipment Technology Co.,Ltd. |