CN107858664A - For depositing the equipment and its deposition process of composite bed - Google Patents

For depositing the equipment and its deposition process of composite bed Download PDF

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Publication number
CN107858664A
CN107858664A CN201710858882.9A CN201710858882A CN107858664A CN 107858664 A CN107858664 A CN 107858664A CN 201710858882 A CN201710858882 A CN 201710858882A CN 107858664 A CN107858664 A CN 107858664A
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China
Prior art keywords
source gas
gas
gas nozzle
nozzle
film
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CN201710858882.9A
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Chinese (zh)
Inventor
郑泰薰
李宰承
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AP Systems Inc
AP Cells Inc
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AP Cells Inc
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Publication of CN107858664A publication Critical patent/CN107858664A/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H10K50/8445—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45534—Use of auxiliary reactants other than used for contributing to the composition of the main film, e.g. catalysts, activators or scavengers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
    • C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

Abstract

This exposure is related to a kind of equipment for depositing composite bed, and it includes chamber, substrate support, driver element, spray head, source gas supply unit, the first reacting gas feeding unit and the second reacting gas feeding unit.Substrate support is placed in chamber to support the substrate of deposition film thereon.Driver element is connected to substrate support.Spray head is configured to spray each in source gas and reacting gas by the source gas nozzle and reaction gas nozzle of the deposition surface towards substrate for the deposition film on substrate.Source gas supply unit is configured to provide source gas to source gas nozzle.First reacting gas feeding unit is configured to provide the first reacting gas to reaction gas nozzle.Second reacting gas feeding unit is configured to provide the second reacting gas to reaction gas nozzle.This exposure is separately related to a kind of method for depositing composite bed.The equipment for being used to deposit composite bed of this exposure can improve the deposition velocity of composite bed.

Description

For depositing the equipment and its deposition process of composite bed
Technical field
This disclosure is related to a kind of equipment for being used to deposit composite bed and its a kind of deposition process, and more precisely, It is related to a kind of equipment for depositing composite bed, it is by using comprising by source gas nozzle and reaction gas nozzle The spray head (shower head) for the electrode part that the common power that front forms plasma simultaneously is applied to is in single chamber Middle deposition composite bed and its a kind of deposition process.
Background technology
Due to such as Organic Light Emitting Diode (organic light emitting diode；OLED), organic solar Battery and organic thin layer transistor (thin film transistor；TFT organic electronic element) is easily invaded by moisture and oxygen Attack, it is therefore desirable to the technique for forming the encapsulated layer for protection element.
Encapsulated layer (encapsulation layer) is by being laminated the barrier layer (barrier for being used for moisture and penetrating into prevention Layer) and for the cushion of pliability formed.Routinely, by being alternately laminated barrier layer in multiple chambers with delaying Layer (by using multiple masks) is rushed to form multiple layer, and therefore, deposits the complex process of encapsulated layer, and for depositing The equipment of encapsulated layer becomes large-sized.
Meanwhile although attempting various deposition process to form encapsulated layer, in general, ald is widely used (atomic layer deposition；) and chemical vapor deposition (chemical vapor deposition ALD；CVD).It is logical CVD method is crossed, can be after source gas and reacting gas be carried by means of plasma (plasma) deposition film, and can be by fast Material of the speed deposition with various compositions.Also, it can be easy to be configured to CVD Large-Scale Equipment.However, CVD method exists Moisture penetrates into defective in prevention characteristic.Meanwhile by using ALD methods, by being sequentially provided predecessor and reacting gas, warp The absorption and reaction crossed on substrate carry out deposition film.Also, ALD methods are penetrated into excellent in prevention characteristic in moisture.However, by It is slow in deposition velocity, therefore ALD methods are difficult to apply in large-scale production.
Therefore, it is necessary to which a kind of method for depositing composite bed, it is fast in deposition velocity and penetrates into prevention spy in moisture It is excellent in property.
[prior document]
[patent document]
KR published patent the 10-2005-0088729th
The content of the invention
This disclosure provides a kind of equipment for depositing composite bed, and it can be by comprising will be used in source gas nozzle The spray head for the electrode part that the common power of plasma is applied to is formed simultaneously with the front of reaction gas nozzle, to enter one Step improves the deposition velocity that composite bed is deposited in single chamber, and reduces the electric supply for forming plasma Number and its a kind of deposition process.
According to one exemplary embodiment, a kind of equipment for being used to deposit composite bed includes：Perform the chamber of the technique of deposition film Room；Substrate support, it is placed in the substrate for depositing the film in the chamber thereon with support；Driver element, it is connected To the substrate support with the mobile substrate support on the first axial direction in the cavity；Spray head, its quilt Configure by the source gas nozzle and reaction gas nozzle of the deposition surface towards the substrate, to spray source gas and reaction gas Each in body for depositing the film over the substrate, and comprising the electrode part for applying common power, So that the front of the source gas nozzle and the reaction gas nozzle forms plasma simultaneously；Source gas supply unit, its It is configured to provide the source gas to the source gas nozzle；First reacting gas feeding unit, it is configured to One reacting gas provides and arrives the reaction gas nozzle；With the second reacting gas feeding unit, it is configured to the second reaction Gas provides and arrives the reaction gas nozzle.Herein, the source gas nozzle and the reaction gas nozzle are with described first Extend on the second axial direction that axial direction intersects, and disposed in parallel to each other on second axial direction.
First reacting gas can include nitrogen (N) atom, and second reacting gas can include oxygen (O) atom, and institute Stating the first reacting gas and second reacting gas can be provided by time-sharing format.
The source gas can react to form the first film with first reacting gas, and with second reacting gas Reaction is to form the second film, and the first film can be mutually laminated together with second film.
The source gas can include：The first source gas comprising metal precursor gas；With with first source gas not The second same source gas, and first source gas can be by time division way (time-divided with second source gas Manner) provide.
The equipment can also include inert gas feeding unit, and it is configured to provide inert gas to the spray Head, and at least one sprinkling inert gas in the source gas nozzle and the reaction gas nozzle can be passed through.
The spray head can also include multiple the taking out parallel to the source gas nozzle and reaction gas nozzle placement Nozzle is inhaled, to be provided in the both sides of the both sides of the source gas nozzle and the reaction gas nozzle.
The source gas nozzle can be provided by multiple, the source gas nozzle can alternate with the reaction gas nozzle Ground is placed on first axial direction, and the source gas nozzle can be placed in the both sides of the reaction gas nozzle At each.
The electrode part is formed as overall common electrode, and the source gas connected with the source gas nozzle Mobile flow path (movement flow path) and the movement of the reacting gas connected with the reaction gas nozzle Flow path can be defined in the common electrode.
It is a kind of for by using the source gas nozzle comprising the placement that is parallel to each other and instead according to another one exemplary embodiment Gas nozzle and the method for the spray head deposition composite bed of the electrode part for forming plasma is answered to include：By using general Common power for forming the plasma simultaneously in the front of the source gas nozzle and the reaction gas nozzle is applied The electrode part being added to, the plasma is formed in the front of the source gas nozzle and the reaction gas nozzle； By being formed in the front of the source gas nozzle and the reaction gas nozzle in the state of the plasma, pass through institute State source gas nozzle and each in source gas and the first reacting gas is sprayed on substrate by the reaction gas nozzle Deposit the first film；With by being that the front of the source gas nozzle and the reaction gas nozzle forms the plasma State in, will be every in the source gas and the second reacting gas by the source gas nozzle and the reaction gas nozzle One kind is sprayed on the substrate to deposit the second film.Herein, the first film is performed while the movement substrate The deposition and second film the deposition.
Methods described can be also comprising discharge in the deposition of the first film and the deposition of second film Between unreacted residual gas (residual gas).
Can be by the discharge of the deposition of the first film, the deposition of second film and the residual gas Repeat pre-determined number.
First reacting gas can include nitrogen (N) atom, and second reacting gas can include oxygen (O) atom.
According to yet another exemplary embodiment, a kind of equipment for being used to deposit composite bed includes：Chamber；Substrate support, its Placement is in the cavity with support substrate；Driver element, it is connected to the substrate support with the cavity The mobile substrate support on one axial direction；Spray head, it is configured to by the deposition surface towards the substrate Each in more source gas and a variety of reacting gas is optionally sprayed at institute by source gas nozzle and reaction gas nozzle State on substrate, and comprising the electrode part for applying common power, so that the source gas nozzle and reacting gas spray The front of mouth forms plasma simultaneously；Multiple source gas supply units, it is configured to provide more source gas The source gas nozzle；With multiple reacting gas feeding units, it is configured to provide a variety of reacting gas described Reaction gas nozzle.Herein, the source gas nozzle and the reaction gas nozzle are intersecting with first axial direction Extend on second axial direction and disposed in parallel to each other on second axial direction, and it is described more by selectivity sprinkling Multiple films that source gas and a variety of reacting gas are formed are mutually laminated together.
Each in more source gas can be provided to the source gas nozzle by time division way, and can be by the time-division Mode provides each in a variety of reacting gas to the reaction gas nozzle.
Brief description of the drawings
From the following description carried out with reference to accompanying drawing, one exemplary embodiment can be understood in more detail, wherein：
Fig. 1 is to illustrate the schematic diagram for being used to deposit the equipment of composite bed according to one exemplary embodiment.
Fig. 2 is the perspective schematic view for illustrating the electrode part according to the spray head of one exemplary embodiment.
Fig. 3 is to show the flow chart for being used to deposit the method for composite bed according to another one exemplary embodiment.
Drawing reference numeral explanation
10：Substrate；
11：First axial direction；
12：Second axial direction；
15：Source gas line；
16：Reacting gas circuit；
30：Pump；
31：Aspiration line；
40：Plasma；
50：Mass flow controller (MFC)；
110：Chamber；
120：Substrate support；
130：Spray head；
131：Source gas nozzle；
131a：The mobile flow path of source gas；
132：Reaction gas nozzle；
132a：The mobile flow path of reacting gas；
133：Suction nozzle；
133a：The mobile flow path of waste gas；
134：Enclosing cover；
135：Electrode part；
140：Source gas supply unit；
150：First reacting gas feeding unit；
151：First reacting gas circuit；
170：Second reacting gas feeding unit；
171：Second reacting gas circuit；
180：Electric supply unit；
181：Radio frequency power part；
182：Adaptation；
190：Inert gas feeding unit；
191：Inert gas circuit；
S100：Step；
S200：Step；
S300：Step.
Embodiment
Hereafter, specific embodiment will be more fully described referring to accompanying drawing.However, the present invention can carry out body in different forms It is existing, and should not be construed as limited by embodiments described herein.On the contrary, these embodiments are provided so that the present invention will thoroughly simultaneously And it is complete, and the scope of the present invention will be fully conveyed to those skilled in the art by these embodiments.Through description, Given like reference numerals similar components, and the similar elements in accompanying drawing are by same reference numerals.Also, in the accompanying drawings, In order to explanation it is clear for the sake of, the size in layer and region can be exaggerated.
Fig. 1 is to illustrate the schematic diagram for being used to deposit the equipment of composite bed according to one exemplary embodiment, and Fig. 2 is to illustrate root According to the perspective schematic view of the electrode part of the spray head of one exemplary embodiment.
Referring to Fig. 1 and Fig. 2, the equipment for depositing composite bed can include：Perform the chamber 110 of the technique of stringer； Substrate support 120, it is placed in the chamber 110 to support the substrate 10 of deposition film thereon；Driver element (does not show Go out), it is connected to substrate support 120 with mobile substrate support 120 on the first axial direction 11 in chamber 110；Spray Leaching first 130, it sprays each in source gas and reacting gas for passing through the source gas of the deposition surface towards substrate 10 Body nozzle 131 and the deposition film, and include the electrode part for applying common power on the substrate 10 of reaction gas nozzle 132 135, to form plasma 40 simultaneously in the front of source gas nozzle 131 and reaction gas nozzle 132；Source gas supply unit 140, source gas is fed to source gas nozzle 131 by it；First reacting gas feeding unit 150, it carries the first reacting gas It is supplied to reaction gas nozzle 132；With the second reacting gas feeding unit 170, it provides the second reacting gas to reacting gas Nozzle 132.Source gas nozzle 131 and reaction gas nozzle 132 can be in the second axial directions intersected with the first axial direction 11 Extend on 12, and disposed in parallel to each other on the second axial direction 12.
Chamber 110 can provide the space for accommodating substrate 10 and performing the technique of deposition film over the substrate 10, and can be in chamber Vacuum is formed in room 110.Also, chamber 110 can be grounded, and for discharging gas and maintaining the outlet of the internal pressure of chamber (not Show) it can be placed in chamber 110.In addition, chamber 110 can be defined in by being moveable into and out the door (not shown) that substrate 10 is passed through In.Also, chamber 110 can be made up of the various materials comprising metal, ceramics, glass, polymer and compound, and chamber 110 Shape can include rectangle, dome (dome) and cylinder.
Substrate support 120 can be placed in chamber 110, and be supported on the substrate 10 of deposition film.Also, substrate Support member 120 can be performed by means of driver element (not shown) and moved back and forth, also, in the case, can be by source gas and anti- Gas is answered sequentially to be sprayed in whole areas of substrate 10 so that film is uniformly deposited in whole areas of substrate 10.
Driver element (not shown) may be connected to substrate support 120 with the first axial direction 11 in chamber 110 Mobile substrate support 120.Herein, driver element (not shown) can allow substrate support 120 to perform in the first axial direction Moving back and forth on 11.In the case, can moving back and forth source gas and reacting gas sequentially by substrate support 120 It is sprayed in whole areas of substrate 10 with deposition film.Although driver element (not shown) can include the power supply of offer electric power (not Show), the transmission of electricity part (not shown) of electric power that is provided from power supply (not shown) of transmission and power supply be connected to be fixed on substrate The coupling part (not shown) of the transmission of electricity part (not shown) of support member 120, but the configuration not limited to this of driver element.As long as drive Moving cell can move (or moving back and forth) substrate support 120 on the first axial direction 11, then can meets that driving is single The configuration of member.
Spray head 130 can by the source gas nozzle 131 and reaction gas nozzle 132 of the deposition surface towards substrate 10, Each in source gas (or predecessor) and reacting gas is sprayed simultaneously for deposition film over the substrate 10.Herein, source Gas nozzle 131 and reaction gas nozzle 132 can have to be prolonged on the second axial direction 12 intersected with the first axial direction 11 The long shape (that is, linearity configuration) stretched, and disposed in parallel to each other on the second axial direction 12.Also, source gas and reaction Gas can be separated by source gas line 15 and reacting gas circuit 16, and respectively provided by independent mode and arrived source gas nozzle 131 With reaction gas nozzle 132.Herein, when on the first axial direction 11 mobile substrate 10 correspond to spray to allow substrate 10 to pass through Leaching first 130 source gas nozzle 131 and reaction gas nozzle 132 section when, can be by thin film deposition in whole areas of substrate 10 On.For example, when being sprayed source gas over the substrate 10 by the movement of substrate 10 first and then spraying reacting gas, Source gas (layer) and reacting gas (layer) mutually reactive can continuously spray source gas and anti-with the deposition film on substrate Answer gas so that the thickness of the increased film of laminated film.Herein, film can be adjusted according to the number moved back and forth of substrate 10 Thickness.Meanwhile when source gas nozzle 131 and reaction gas nozzle 132 are increasing in number, can be by substrate 10 once Film of mobile (or moving back and forth) deposition with larger thickness.Also, work as and multiple offer sources gas nozzle 131 and reaction gas are provided During each in body nozzle 132, source gas and reacting gas are distributed in source gas line 15 and reacting gas circuit 16, and It is provided to each in source gas nozzle 131 and reaction gas nozzle 132.Also, source gas can be various metals forerunner Thing gas, and reacting gas can be the multiple gases with metal precursor gas reaction, and include the first reacting gas and second Reacting gas.
Also, spray head 130 can include the electrode part 135 for being used for applying common power, with the He of source gas nozzle 131 The front of reaction gas nozzle 132 forms plasma 40 simultaneously.Electrode part 135 can be to apply common power with source gas The front of nozzle 131 and reaction gas nozzle 132 (for example, area between substrate and source gas nozzle and reaction gas nozzle) is same When formed plasma 40 electrode (or multiple electrodes).Electrode part 135 can be made up of an electrode, and can be by an electric power It is applied to thereon, or can be made up of multiple electrodes, and common power (that is, an electric power) can be applied to thereon.As long as however, Apply common power to form plasma 40 simultaneously in the front of source gas nozzle 131 and reaction gas nozzle 132, then electricity The shape and number of pole are with regard to unrestricted.
Also, according to the size of substrate 10, the number of electrode part 135 can be different., can be by an electricity when substrate 10 is small Pole part 135 provides and arrives spray head 130, and when substrate 10 has high surface area, can divide spray head 130, and can respectively by Multiple electrodes part 135 provides the division part to spray head 130, because as the distance provided from common power increases Greatly, the intensity of plasma 40 may be uneven.
With the common power by electrode part 135, plasma 40 can be made to be formed at source gas nozzle 131 and reaction gas Two fronts of body nozzle 132, and the plasma 40 in the front of source gas nozzle 131 can be controlled together by common power With the plasma 40 in the front of reaction gas nozzle 132.Therefore, the supply of electric power of electrode part 135 is provided power to The number of device unit 180 can be reduced.
For example, electrode part 135 can be each in offer source gas nozzle 131 and reaction gas nozzle 132 An at least one of electrode, and the common electrode as source gas nozzle 131 and reaction gas nozzle 132.Electrode can Generally to form plasma 40 in the front of source gas nozzle 131 and reaction gas nozzle 132, an electrode can be in source gas Two fronts of body nozzle 131 and reaction gas nozzle 132 form plasma 40, and can control together in source gas nozzle The plasma 40 in 131 front and the plasma 40 in the front of reaction gas nozzle 132.In the case, can be minimum Change the number of the electric supply unit 180 for providing power to electrode part 135, i.e. a common power can be used Supply unit.When multiple electric supply units are connected respectively to multiple electrodes, due to individually controlling multiple electrodes, because This matching (matching) may be difficult.However, in an exemplary embodiment, because electrode part 135 is by a supply of electric power Device unit 180 controls, therefore can simplify matching.
In the related art, due to electrode is provided to each in source gas nozzle and reaction gas nozzle so that Institute is individually installed on using individual electrode, therefore by radio frequency (radio frequency) partial power 181 and adaptation 182 In each in active gas nozzle and reaction gas nozzle, and match be difficult, and in addition, produce process reproducibility and The destabilizing factor of technique, for example, the shakiness for the change according to processing atmosphere (or gas atmosphere) being attributed to during technique Surely the transient plasma matched.Also, because the deposition velocity of ald (ALD) method is necessary increase with big Applied in large-scale production, therefore the number of each in source gas nozzle and reaction gas nozzle is necessarily increased.However, by The configuration of the individual nozzles of each in source gas nozzle and reaction gas nozzle is extremely complex, therefore injector spacing is difficult to Reduce, and the increase of the number of source gas nozzle and reaction gas nozzle is restricted.However, due in an exemplary embodiment Radio frequency power part 181 and adaptation 182 are installed to source gas nozzle 131 and reaction gas nozzle 132 jointly, therefore can simplify Matching, moreover, can prevent or suppress process reproducibility and the destabilizing factor of technique, for example, being attributed to unstable matching not Stable plasma.
Meanwhile when forming the first film and the second film, plasma 40 can be formed at source gas by electrode part 135 The front of body nozzle 131 and reaction gas nozzle 132 to deposit the first film and the second film, and by this, the first film and The deposition velocity of second film can increase.
Also, spray head 130 can be also multiple comprising being disposed parallel to source gas nozzle 131 and reaction gas nozzle 132 Suction nozzle 133 so that multiple suction nozzles 133 be provided in source gas nozzle 131 both sides and reaction gas nozzle 132 two Side.The both sides of each that multiple suction nozzles 133 may be provided in source gas nozzle 131 and reaction gas nozzle 132, will The excessive gas material and the accessory substance of deposition for not making to contribute to the deposition of each in film drain.For example, it is multiple Suction nozzle 133 may be connected to aspiration line 31, and the unreacted residual gas in chamber 110 can be by being placed in aspiration line 31 Pump 30 aspirate, and discharged by aspiration line 31.
Also, electrode part 135 is formed as overall common electrode (or electrode body), and connects with source gas nozzle 131 The mobile flow path 131a of logical source gas and the mobile flow path of the reacting gas connected with reaction gas nozzle 132 132a can be defined in common electrode.For example, electrode part 135 is formed as overall common electrode, and the shifting of source gas Each in dynamic flow path 131a and reacting gas mobile flow path 132a can be defined in electrode part 135.When When multiple suction nozzles 133 are provided, the mobile flow path 133a of waste gas can be defined.The mobile flow path 131a of source gas and The mobile flow path 132a of reacting gas can be on the second axial direction 12 along source gas nozzle 131 and reaction gas nozzle 132 long shape extension so that source gas and reacting gas are distributed and be equably sprayed on substrate 10 well.It is meanwhile useless The mobile flow path 133a of gas can allow the waste gas comprising unreacted residual gas to be smoothly collected into aspiration line 31 and pass through Aspiration line 31 is smoothly discharged.Overall common electrode can include multiple source gas nozzles 131, multiple reaction gas nozzles 132, Multiple mobile flow path 131a corresponding to the source gas of multiple source gas nozzles 131 and corresponding to multiple reaction gas nozzles Multiple mobile flow path 132a of 132 reacting gas.In the case, due to nozzle and mobile flow path it is processed with It is defined in overall common electrode, therefore can be readily processed or manufacture electrode part 135 and/or spray head 130, and therefore, can The number of maximization source gas nozzle 131 and reaction gas nozzle 132.
The source gas that source gas supply unit 140 can provide source gas by source gas line 15 spray head 130 sprays Mouth 131.Herein, mass flow controller (mass flow controller；MFC) 50 can be installed on source gas line 15, And source gas can be for deposit thin films of silicon silicon source (for example, SiH4).According to one exemplary embodiment for depositing composite bed Equipment identical sources gas can be used to be used to deposit the first film and the second film.
Source gas may include the first source gas containing metal precursor gas and second source different from the first source gas Gas.Herein, source gas may include multiple gases (or the various metals predecessor gas comprising the first source gas and the second source gas Body), and the multiple gases can be provided independently by multiple source gas supply units respectively.First source gas can include metal Precursor gas, and metal can include silicon (Si).Can be alternative metals also, the second source gas can be different from the first source gas The gas with various of precursor gas, and can be the metal precursor gas different from the metal precursor gas of the first source gas. Herein, the second source gas is also metal precursor gas, the second source gas can be containing with the first source gas (or, the first source gas The metal precursor gas of body) in the different metal of the metal that contains metal precursor gas, or be coupled to the coordination of metal Body (ligand) the metal precursor gas different from the ligand of the first source gas.When the second source gas includes and the first source gas During the metal identical metal contained in body, the second source gas can be coupled to same metal ligand and the first source gas not Same metal precursor gas.First source gas can be reacted with the first reacting gas to form the first film, and the second source gas It can be reacted with the second reacting gas to form the second film.
Also, the first source gas and the second source gas can be provided to source gas nozzle independently of one another by time division way 131.That is, for the time, the first source gas and the second source gas can be separated, and each of which kind can be independently supplied to Source gas nozzle 131.For example, when the film of two species of lamination, alternately by the first source gas and the second source gas Body provides and arrives same source gas nozzle 131.Meanwhile when the film of n species of lamination, the equipment for depositing composite bed can wrap Containing two to n source gas supply unit 140 and by time division way (or over-over mode) by two kinds to n source gas with corresponding to (or simultaneously) provides its reacting gas together.Herein, because each in the gas of source and each shape in reacting gas Into combination to react to each other, so mutually different multiple films can be formed, more source gas and more can be provided by time division way Each in kind of reacting gas, and can provide simultaneously each in each and reacting gas in the source gas to form combination Kind.
First reacting gas feeding unit 150 can be provided the first reacting gas by the first reacting gas circuit 151 The reaction gas nozzle 132 of spray head 130, and mass flow controller (MFC) 50 can be installed in the first reacting gas circuit 151 On, and the first reacting gas can be with source gas reaction.
Second reacting gas feeding unit 170 can be provided the second reacting gas by the second reacting gas circuit 171 The same reaction gas nozzle 132 of spray head 130.Herein, mass flow controller (MFC) 50 can be installed in the second reacting gas On circuit 171, and the second reacting gas can be alternately provided with the first reacting gas and with source gas reaction.Herein, second is anti- Answer gas different from the first reacting gas.
First reacting gas can include nitrogen (N) atom and can be nitrogen (N2), ammonia (NH3) or fellow, and the second reacting gas Comprising oxygen (O) atom and can be able to be nitrous oxide (N2O), oxygen (O2), nitric oxide (NO) or fellow.Herein, can be on time Point mode provides the first reacting gas and the second reacting gas to reaction gas nozzle 132 independently of one another.That is, the first reaction Gas can be divided temporally with the second reacting gas, and provides arrive same reaction gas nozzle 132 independently of one another.Citing comes Say, when the film of two species of lamination, alternately provide the first reacting gas and the second reacting gas to same reaction Gas nozzle 132.Meanwhile when the film of n species of lamination, the equipment for depositing composite bed can include two and arrive n instead Gas supply unit is answered, and by two kinds to n kinds reacting gas and corresponds to its source gas by time division way (or over-over mode) There is provided together.
Also, source gas can react to form the first film with the first reacting gas, and with the second reacting gas react with Form the second film.Herein, can be mutually laminated together with the second film by the first film.Source gas can be with including nitrogen (N) original First reacting gas of son is reacted to form nitride layer (the first film), and with including the second reacting gas of oxygen (O) atom React to form oxide skin(coating) (the second film).Herein, the first film and the second film can by means of forming plasma 40 and Deposition.When substrate 10 being moved back and forth into pre-determined number when each in sprinkling source gas and the first reacting gas, have The first film (nitride layer) of predetermined thickness can be deposited on substrate 10.Thereafter, when in sprinkling source gas and the second reaction gas When substrate 10 being moved back and forth into pre-determined number during each in body, second film (oxide skin(coating)) with predetermined thickness can sink And therefore product is on the first film, can be mutually laminated together with the second film by the first film.Thereafter, the first film can be again It is secondary to be deposited on the second film.Because the technique of repeated deposition (lamination) first and second film is thin to be laminated first and second Film, so the composite bed of the first and second films can be manufactured.
The first film can be silicon nitride (SiNx) layer, and silicon nitride (SiNx) layer have moisture penetration prevent efficiency.Second is thin Film can be silica (SiOx) layer, and CH groups can be added to the second film.When adding CH groups, cushion can adjust Such as BDEAS, HMDSO and HMDS organic molecule gas can be used to ensure extreme pliability under foldable grade in pliability Body adds CH groups, also, as the gas with various for adding CH groups, carbonaceous gas also can be used, for example, methane (CH4) and ethane (C2H6)。
Also, work as silicon nitride (SiNx) layer (the first film) and silica (SiOx) layer (the second film) is mutually laminated to When together, silicon nitride (SiNx) layer and silica (SiOx) single layer of each in layer can be withArrive Thickness film, and by silicon nitride (SiNx) layer (the first film) and silica (SiOx) layer is mutually laminated together compound Layer can be the multilayer of film, and it hasArriveThickness.In the case, composite bed can have pliability And excellent moisture penetrates into and prevents characteristic.Composite bed described above can be used as being used for such as Organic Light Emitting Diode (OLED), the encapsulated layer of the organic electronic element of organic solar batteries and OTFT (organic tft), and can pass through Silicon nitride (SiNx) layer and silica (SiOx) composite bed of layer provides excellent encapsulation layer for organic electronic element.
It can also be included according to the equipment for being used to deposit composite bed of one exemplary embodiment and provide inert gas to spray head 130 inert gas feeding unit 190, and at least one spray in source gas nozzle 131 and reaction gas nozzle 132 can be passed through Mouth sprays inert gas.Inert gas can be provided spray head 130 and comprising inert gas line by inert gas feeding unit 190 Road 191.At least one sprinkling inert gas in source gas nozzle 131 and reaction gas nozzle 132, inert gas line can be passed through Road 191 can be connected with source gas line 15 or reacting gas circuit 16 so that inert gas is provided to source gas nozzle 131 and anti- Gas nozzle 132 is answered, and inert gas can be sprayed by source gas nozzle 131 and reaction gas nozzle 132.Herein, indifferent gas Body circuit 191 can be with each in source gas line 15, the first reacting gas circuit 151 or the second reacting gas circuit 171 Connection, and mass flow controller (MFC) 50 may be provided in the inert gas line connected with each in the gas line On road 191.
Inert gas can include argon (Ar) gas, helium (He) gas or nitrogen (N2) gas.Herein, inert gas can play the part of the angle of carrier gas Color, play the part of the role of the concentration of the first reacting gas of dilution or the second reacting gas, or as the deposition work for performing the first film The gas of developing technique between the depositing operation of skill and the second film.
When performing developing technique, can will in previous thin film deposition processes using and be retained in source gas line 15 and anti- The source gas in gas line 16 and reacting gas and its residue is answered to discharge (or row by only allowing inert gas to flow through it Put).
Also, can be by multiple offer sources gas nozzle 131, source gas nozzle 131 can be handed over mutually with reaction gas nozzle 132 Alternately dispose, and source gas nozzle 131 can be placed in each in the both sides of reaction gas nozzle 132 at.It can be carried by multiple Source gas nozzle 131, and source gas nozzle 131 and reaction gas nozzle 132 can alternate in the first axial direction 11 Upper placement.Herein, multiple suction nozzles 133 can be placed in two outermosts and source gas nozzle 131 of the first axial direction 11 Between reaction gas nozzle 132, and can be by multiple offer reaction gas nozzles 132.Source gas nozzle 131 may be provided in reaction At each in the both sides of gas nozzle 132, so as to which source gas is sprayed over the substrate 10 before reacting gas is sprayed.Work as head First by reacting gas sprinkling over the substrate 10 when, therefore can not due in the absence of the source gas (layer) treated with reacting gas reaction Deposition film.Therefore, can deposition film when first spraying source gas over the substrate 10 to be reacted with source gas (layer).Together When, when substrate 10 is moved to side and returns to home position, although source gas (layer) is adsorbed twice, due to source gas (layer) is reacted with reacting gas by constant ratio, therefore the amount based on reacting gas determines the thickness of film, although and source gas (layer) is adsorbed twice, but does not influence the gross thickness of film.
Meanwhile spray head 130 can be also comprising the enclosing cover 134 for being provided in the outside of electrode part 135.Enclosing cover 134 can be placed in The outside of electrode part 135 is with guard electrode part 135 and can allow spray head 130 is earth-free to arrive chamber 110 or electrode part 135 Surface to be insulated.Herein, although enclosing cover 134 can be made up of aluminium (Al) or ceramic material, one exemplary embodiment is not outstanding It is limited to this.
Also, can be also comprising the electric power for being connected to electrode part 135 according to the equipment for film of one exemplary embodiment Supply unit 180 is used for the electric power for forming plasma 40 with offer.Electric supply unit 180 may be connected to electrode part 135 to provide the electric power for being used for forming plasma 40, and includes the radio frequency power that radio frequency power is provided to electrode part 135 Part 181 and the adaptation 182 that is placed between radio frequency power part 181 and electrode part 135 so that reflection power substantially 0.Radio frequency power part 181 can include radio frequency (radio frequency；RF) generator and by for forming plasma 40 Radio frequency power provides and arrives electrode part 135.
Adaptation 182 can include variable condenser and be provided between radio frequency power part 181 and electrode part 135.It is logical This is crossed, the executable matching between radio frequency power part 181 and electrode part 135 of adaptation is so that reflection power is 0.According to showing Exemplary embodiment, can when electrode part 135 is matched to provide RF electric power by adaptation 182 with a radio frequency power part 181 Simplify the matching between radio frequency power part 181 and electrode part 135.
Herein, chamber 110 can be grounded, and the ground of chamber 110 can be used for being used for the ground for forming plasma.Also, When electrode part 135 receives electric power from electric supply unit 180, electrode part 135 can spray by the ground of chamber 110 Plasma 40 is formed in region between leaching first 130 and substrate support 120.When plasma is formed in spray head 130 To spray source gas in plasmoid and during reacting gas, the free radical of source gas or reacting gas is removed to reduce Reactivity on substrate 10.Therefore, spray head 130 and substrate supports can be formed at according to one exemplary embodiment, plasma 40 In region between part 120.
As noted previously, as it is used to deposit the equipment of composite bed by using comprising will be used for according to one exemplary embodiment In source, the front of gas nozzle and reaction gas nozzle forms the electrode part that the common power of plasma is applied to simultaneously Spray head, and plasma is formed in the region between spray head and substrate, therefore the number of electric supply unit can be reduced Mesh, and the structure of spray head can be simplified.Therefore, the equipment for depositing composite bed can have simplified structure, and can reduce it Manufacturing cost.Also, when being alternately provided reacting gas while identical sources gas is being provided, composite bed can be deposited on list In individual chamber, it can be easy to form composite bed by only switching reacting gas, and total tack time can be reduced.
Fig. 3 is to show the flow chart for being used to deposit the method for composite bed according to another one exemplary embodiment.
Referring to Fig. 3, the method for depositing composite bed according to another one exemplary embodiment will be described in further detail, and To omit with according to one exemplary embodiment be used for deposit description repetitive description described in the equipment of composite bed.
For for by using comprising the source gas nozzle disposed in parallel to each other and reaction gas nozzle and for shape Into the spray head of the electrode part of plasma come deposit the method for composite bed according to another one exemplary embodiment be used for sink The method of product composite bed can include：Step S100, by using by the front of source gas nozzle and reaction gas nozzle The electrode part that the common power of plasma is applied to is formed simultaneously, the front shape of gas nozzle and reaction gas nozzle in source Into plasma；Step S200, by being that the front of source gas nozzle and reaction gas nozzle forms the state of plasma In by source gas nozzle and reaction gas nozzle by each in source gas and the first reacting gas be sprayed on substrate come Deposit the first film；With step S300, by being that the front of source gas nozzle and reaction gas nozzle forms plasma Each in source gas and the second reacting gas is sprayed at by substrate by source gas nozzle and reaction gas nozzle in state On deposit the second film.Herein, the step S200 and deposition second of deposition the first film can be performed while mobile substrate The step S300 of film.
First, in the step of S100, by using by for same in the front of source gas nozzle and reaction gas nozzle When form the electrode part of spray head that the common power of plasma is applied to, plasma is formed at source gas nozzle and anti- Answer the front of gas nozzle.The front of source gas nozzle and reaction gas nozzle can be (for example, between spray head and substrate Region) form deposition (or lamination) the first film and the second film in the state of plasma.
Thereafter, in the step of S200, by being that the front of source gas nozzle and reaction gas nozzle forms plasma In the state of body, sprayed by source gas nozzle and reaction gas nozzle on substrate every in source gas and the first reacting gas One kind, deposit the first film.When forming the first film, due to reducing deposition velocity without formation plasma, therefore etc. Gas ions can be formed at active gas nozzle and reaction gas nozzle front, to increase the deposition velocity of the first film, Thus the first film is deposited.Herein, plasma can be formed in the region between spray head and substrate.
Thereafter, in the step of S300, by being that the front of source gas nozzle and reaction gas nozzle forms plasma In the state of body, sprayed by source gas nozzle and reaction gas nozzle on substrate every in source gas and the second reacting gas One kind, deposit the second film.When forming the second film, due to reducing deposition velocity without formation plasma, therefore etc. Gas ions can be formed at active gas nozzle and reaction gas nozzle front, to increase the deposition velocity of the second film, Thus the second film is deposited.Herein, plasma can be formed in the region between spray head and substrate.
The step S300 of the second film of step S200 and deposition of deposition the first film can be performed while mobile substrate. The first film is deposited when being to move (or moving back and forth) substrate on the first axial direction and during the second film, because by source gas Body and reacting gas are sprayed in whole areas of the substrate of the movement of substrate in order, thus the first film and the second film by according to Deposit to sequence and mutually laminated together.Herein, source gas nozzle and reaction gas nozzle can intersect with the first axial direction The second axial direction on extend, and disposed in parallel to each other on the second axial direction.
The step of deposition the first film can be also included according to the method for being used to deposit composite bed of one exemplary embodiment The step of unreacted residual gas being discharged between S200 and the step S300 for depositing the second film.Can be for depositing the first film Developing technique is performed between step S200 and the step S300 for depositing the second film.Used in the previous depositing operation of film and The source gas and reacting gas and its residue being retained in source gas line 15 and reacting gas circuit 16 can be by performing punching Wash technique and discharge (or discharge), and can prevent by mixing the first source gas and the second source gas or the first reacting gas and the The deterioration of the layer quality of film caused by two reacting gas.
The step of step S200 for depositing the first film, the step S300 of the second film of deposition and discharge residual gas, can be repeated Pre-determined number, and it is residual to perform discharge between the deposition and the deposition of another film of one in the first film and the second film The step of gas.Weighed when the step of step S200 that will deposit the first film, step S300 and discharge residual gas for depositing the second film When multiple pre-determined number is to be laminated the first film and the second film, the composite bed of the first film and the second film can be manufactured.Herein, may be used The step of discharge residual gas being performed between the deposition of one and the deposition of another film in the first film and the second film so that Prevent the layer of film caused by by mixing the first source gas and the second source gas or the first reacting gas and the second reacting gas The deterioration of quality.
First reacting gas can include nitrogen (N) atom and can be nitrogen (N2), ammonia (NH3) or fellow, and the second reacting gas Comprising oxygen (O) atom and can be able to be nitrous oxide (N2O), oxygen (O2), nitric oxide (NO) or fellow.The first film can For silicon nitride (SiNx) layer, and the silicon nitride (SiNx) layer there is excellent moisture to penetrate into prevent efficiency.Second film can be oxygen SiClx (SiOx) layer, and CH groups can be added to it.When adding CH groups, film can be by adjusting the pliability of cushion To ensure the extreme pliability under foldable grade.Herein, organic point containing such as BDEAS, HMDSO and HMDS can be used Such as methane (the CH of sub- gas4) and ethane (C2H6) gas add CH groups.
Also, work as silicon nitride (SiNx) layer and silica (SiOx) layer it is mutually laminated together when, silicon nitride (SiNx) layer With silica (SiOx) single layer of each in layer can be withArriveThickness film, and silicon nitride (SiNx) layer and silica (SiOx) layer mutually composite bed laminated together can be withArriveThickness Multilayer.In the case, composite bed can have excellent moisture to penetrate into prevention characteristic and pliability.Composite bed described above It can be used as being used for such as Organic Light Emitting Diode (OLED), organic solar batteries and OTFT (thin-film transistor；TFT the encapsulated layer of organic electronic element).Silicon nitride (SiN can be passed throughx) layer and silica (SiOx) layer answers Layer is closed to provide the excellent encapsulation layer for organic electronic element.
Also, necessarily, because additional layer in addition to the first and second films can be further laminated (for example, the 3rd Film and the 4th film), so the further preferred characteristic of film can be ensured, for example, moisture penetrates into prevention and pliability.
Hereafter, the equipment for depositing composite bed according to another one exemplary embodiment will be described, and by omission and previously According to one exemplary embodiment be used for deposit the equipment of composite bed and for depositing the description weight described in the method for composite bed Multiple description.
Included according to a kind of equipment for being used to deposit composite bed of another one exemplary embodiment：Chamber；Substrate support, its Placement is in the chamber with support substrate；Driver element, it is connected to substrate support with the first axial direction in the chamber Mobile substrate support；Spray head, it includes electrode part, the source gas that the electrode part passes through the deposition surface towards substrate Body nozzle and reaction gas nozzle, each in more source gas and a variety of reacting gas is optionally sprayed at substrate On, and institute will be applied to for the common power for forming plasma simultaneously in the front of source gas nozzle and reaction gas nozzle State electrode part；Multiple source gas supply units, it provides more source gas to source gas nozzle；Supplied with multiple reacting gas Unit is answered, it provides a variety of reacting gas to reaction gas nozzle.Herein, source gas nozzle and reaction gas nozzle are with Extend on the second axial direction that one axial direction intersects, and disposed in parallel to each other on the second axial direction, and will be a variety of Source gas and a variety of reacting gas are optionally sprayed onto multiple films.
Equipment for depositing composite bed can be laminated multiple (that is, n species) films, and by time division way (or alternately Mode) a variety of (for example, two kinds are arrived n kinds) source gases are provided together with a variety of (for example, two kinds are arrived n kinds) reacting gas corresponding to it In each.Herein, because each in the gas of source is combined to react to each other with each formation in reacting gas, institute So that mutually different multiple films can be formed, more source gas and a variety of reacting gas can be provided by time division way, and can be simultaneously Each in the source gas for forming combination and each in reacting gas are provided.Herein, the number and reaction gas of source gas The number of body can be mutually identical or mutually different.Also, multiple films are alternately laminated, the film in multiple films can have Mutual identical source gas, and the film in multiple films can have mutual identical reacting gas.Herein, when lamination two or During the film of more species, it is ensured that more favourable film characteristics, for example, moisture, which penetrates into, prevents characteristic and pliability.
Each in more source gas can be independently supplied to source gas nozzle by time division way.That is, can be by the time-division Each in more source gas is independently supplied to same source gas nozzle by mode.For example, when two species of lamination Film when, alternately provide two source gas to same source gas nozzle.Meanwhile when the film of n species of lamination, use Two to n reacting gas feeding units can be included in the equipment of deposition composite bed, and will by time division way (or over-over mode) Two kinds provide to n kinds reacting gas together with the source gas corresponding to it.
A variety of reacting gas by the time-division and can be independently supplied to reaction gas nozzle to correspond respectively to more source gas. That is, each in a variety of reacting gas can temporally divide and be independently supplied to same reaction gas nozzle.Herein, can carry For a kind of with corresponding to one kind in more source gas in a variety of reacting gas, and can provide another in a variety of reacting gas Kind is with corresponding to the another kind in more source gas.For example, alternately will be a variety of when the film of two species of lamination Reacting gas provides and arrives same reaction gas nozzle, alternately provides one kind in a variety of reacting gas to reacting gas spray Mouth is with corresponding to one kind in more source gas, and alternately by another and reacting gas in a variety of reacting gas In it is a variety of in a kind of reaction gas nozzle that provides together so as to corresponding to the another kind in more source gas.Meanwhile when During the film of n species of lamination, the equipment for depositing composite bed can include two to n reacting gas feeding units, and press Time division way (or over-over mode) provides two kinds to n kinds reacting gas together with the source gas corresponding to it.
Meanwhile when forming multiple films, can by the front of source gas nozzle and reaction gas nozzle formed etc. from Daughter deposits multiple films, also, by this, can improve the deposition velocities of multiple films.
As noted previously, as it is used to deposit the equipment of composite bed by using comprising will be used for according to one exemplary embodiment In source, the front of gas nozzle and reaction gas nozzle forms the electrode part that the common power of plasma is applied to simultaneously Spray head and form plasma in region between spray head and substrate, therefore the number of electric supply unit can be reduced Mesh, and the structure of spray head can be simplified.Therefore, the equipment for depositing composite bed can have simplified structure, and can reduce it Manufacturing cost.
Also, when continuously providing same source gas when being alternately provided reacting gas, composite bed can be deposited on In single chamber, it can be easy to form composite bed by only switching reacting gas, and total tack time can be reduced.Also, because By the silicon nitride (SiN with excellent film characteristicsx) layer and silica (SiOx) layer is mutually laminated together, so use can be provided In organic electronic element and with the encapsulated layer of excellent moisture infiltration prevention characteristic.
Meanwhile because the source gas nozzle and reacting gas that alternate and abreast dispose when by when mobile substrate Nozzle sprays each in deposition film in the state of each in reacting gas described in the gas of source simultaneously, so can improve By means of the deposition velocity of the film of Atomic layer deposition method.
When element or layer are referred to as ' on another ', it can be directly on another, or one or more also may be present Insertion element or layer.On the other hand, it should be appreciated that when element is directly positioned on another or is connected to another, therebetween may be used In the absence of another element.Therefore, the surface (top surface or basal surface) of substrate or the table in substrate can be represented " on substrate " The surface of the layer of deposition on face.
Although describing one exemplary embodiment with reference to specific embodiment, its not limited to this.Therefore, the technology of art Personnel will readily appreciate that, can be right in the case where not departing from the spirit and scope of the present invention defined by the appended claims It carries out various modifications and changes.Therefore, the scope of the present invention is by appended claims rather than described above and wherein retouched The one exemplary embodiment stated defines.

Claims (14)

1. a kind of equipment for depositing composite bed, it is characterised in that the equipment includes：
Perform the chamber of the technique of deposition film；
Substrate support, it is placed in the substrate for depositing the film in the chamber thereon with support；
Driver element, it is connected to the substrate support with the mobile substrate on the first axial direction in the cavity Support member；
Spray head, it is configured to source gas nozzle and reaction gas nozzle by the deposition surface towards the substrate, spray Each in source gas and reacting gas is spilt, for depositing the film over the substrate, and including for applying altogether With the electrode part of electric power, so that the front of the source gas nozzle and the reaction gas nozzle forms plasma simultaneously；
Source gas supply unit, it is configured to provide the source gas to the source gas nozzle；
First reacting gas feeding unit, it is configured to provide the first reacting gas to the reaction gas nozzle；And
Second reacting gas feeding unit, it is configured to provide the second reacting gas to the reaction gas nozzle,
Wherein described source gas nozzle and the reaction gas nozzle are in the second axial direction side intersected with first axial direction Upwardly extend, and disposed in parallel to each other on second axial direction.
2. equipment according to claim 1, wherein first reacting gas includes nitrogen-atoms,
Second reacting gas includes oxygen atom, and
First reacting gas and second reacting gas are provided by time-sharing format.
3. equipment according to claim 1, wherein the source gas is reacted with first reacting gas to form first Film, and reacted with second reacting gas to form the second film, and
The first film and second film are mutually laminated together.
4. equipment according to claim 1, wherein the source gas includes：
The first source gas including metal precursor gas；And
The second source gas different from first source gas, and
First source gas is provided with second source gas by time division way.
5. equipment according to claim 1, in addition to inert gas feeding unit, it is configured to provide inert gas To the spray head,
Wherein pass through at least one sprinkling inert gas in the source gas nozzle and the reaction gas nozzle.
6. equipment according to claim 1, wherein the spray head is also included parallel to the source gas nozzle and described Multiple suction nozzles of reaction gas nozzle placement, to be provided in the both sides of the source gas nozzle and reacting gas spray The both sides of mouth.
7. equipment according to claim 1, wherein the source gas nozzle presses multiple offers,
The source gas nozzle is placed on first axial direction with alternateing with the reaction gas nozzle, and
The source gas nozzle be placed in each in the both sides of the reaction gas nozzle at.
8. equipment according to claim 1, wherein the electrode portion point is formed as overall common electrode, and
The mobile flow path of the source gas connected with the source gas nozzle and connect with the reaction gas nozzle The mobile flow path of the reacting gas is defined in the common electrode.
9. a kind of be used for by using the source gas nozzle and reaction gas nozzle including the placement that is parallel to each other and for formation etc. The method of the spray head deposition composite bed of the electrode part of gas ions, it is characterised in that methods described includes：
By using by for forming the plasma simultaneously in the front of the source gas nozzle and the reaction gas nozzle The electrode part that the common power of body is applied to, is formed in the front of the source gas nozzle and the reaction gas nozzle The plasma；
By being formed in the front of the source gas nozzle and the reaction gas nozzle in the state of the plasma, lead to Cross the source gas nozzle and each in source gas and the first reacting gas is sprayed at substrate by the reaction gas nozzle On deposit the first film；And
By being formed in the front of the source gas nozzle and the reaction gas nozzle in the state of the plasma, lead to The source gas nozzle and the reaction gas nozzle is crossed to be sprayed at each in the source gas and the second reacting gas The second film is deposited on the substrate,
The deposition of the first film is wherein performed while the movement substrate and the described of second film is sunk Product.
10. equipment according to claim 9, further comprise the deposition and described the of the discharge in the first film Unreacted residual gas between the deposition of two films.
11. equipment according to claim 10, wherein by the deposition of the first film, the institute of second film The discharge for stating deposition and the residual gas repeats pre-determined number.
12. equipment according to claim 9, wherein first reacting gas includes nitrogen-atoms, and
Second reacting gas includes oxygen atoms.
13. a kind of equipment for depositing composite bed, it is characterised in that the equipment includes：
Chamber；
Substrate support, it is disposed in the cavity with support substrate；
Driver element, it is connected to the substrate support with the mobile substrate on the first axial direction in the cavity Support member；
Spray head, it is configured to source gas nozzle and reaction gas nozzle by the deposition surface towards the substrate, choosing Selecting property by each sprinkling in more source gas and a variety of reacting gas over the substrate, and including common for applying The electrode part of electric power, so that the front of the source gas nozzle and the reaction gas nozzle forms plasma simultaneously；
Multiple source gas supply units, it is configured to provide more source gas to the source gas nozzle；And
Multiple reacting gas feeding units, it is configured to provide a variety of reacting gas to the reaction gas nozzle,
Wherein described source gas nozzle and the reaction gas nozzle are in the second axial direction side intersected with first axial direction Upwardly extend and disposed in parallel to each other on second axial direction, and
Multiple films that more source gas and a variety of reacting gas formation are sprayed by selectivity are mutually laminated to one Rise.
14. equipment according to claim 13, wherein each in a variety of source gases is provided by time division way To the source gas nozzle, and
Each in a variety of reacting gas is arrived the reaction gas nozzle by time division way offer.
CN201710858882.9A 2016-09-21 2017-09-20 For depositing the equipment and its deposition process of composite bed Pending CN107858664A (en)

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CN101171365A (en) * 2005-05-09 2008-04-30 Asm吉尼泰克韩国株式会社 Multiple inlet atomic layer deposition reactor
CN102851648A (en) * 2011-06-30 2013-01-02 三星显示有限公司 Apparatus for atomic layer deposition, sealing method and nozzle set for deposition
KR20140113037A (en) * 2013-03-15 2014-09-24 주식회사 원익아이피에스 Apparatus for processing substrate and method for manufacturing complex film

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CN101171365A (en) * 2005-05-09 2008-04-30 Asm吉尼泰克韩国株式会社 Multiple inlet atomic layer deposition reactor
CN102851648A (en) * 2011-06-30 2013-01-02 三星显示有限公司 Apparatus for atomic layer deposition, sealing method and nozzle set for deposition
KR20140113037A (en) * 2013-03-15 2014-09-24 주식회사 원익아이피에스 Apparatus for processing substrate and method for manufacturing complex film

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