CN107845567A - Graphene double heterojunction and preparation method thereof - Google Patents
Graphene double heterojunction and preparation method thereof Download PDFInfo
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- CN107845567A CN107845567A CN201710876844.6A CN201710876844A CN107845567A CN 107845567 A CN107845567 A CN 107845567A CN 201710876844 A CN201710876844 A CN 201710876844A CN 107845567 A CN107845567 A CN 107845567A
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 64
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 64
- 238000002360 preparation method Methods 0.000 title claims abstract description 31
- 239000000463 material Substances 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 29
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 15
- 239000007789 gas Substances 0.000 claims description 13
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 11
- 239000001294 propane Substances 0.000 claims description 11
- 229910000077 silane Inorganic materials 0.000 claims description 11
- 238000004140 cleaning Methods 0.000 claims description 9
- 238000000407 epitaxy Methods 0.000 claims description 6
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 5
- 239000012300 argon atmosphere Substances 0.000 claims description 5
- 239000000460 chlorine Substances 0.000 claims description 5
- 229910052801 chlorine Inorganic materials 0.000 claims description 5
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 230000007547 defect Effects 0.000 abstract description 7
- 230000007704 transition Effects 0.000 abstract description 5
- 238000005530 etching Methods 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 6
- 239000012298 atmosphere Substances 0.000 description 4
- 238000000197 pyrolysis Methods 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 3
- 125000004432 carbon atom Chemical group C* 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 2
- 238000004821 distillation Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- -1 graphite Alkene Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000004047 hole gas Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001131 transforming effect Effects 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02378—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02527—Carbon, e.g. diamond-like carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02529—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02609—Crystal orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/161—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System including two or more of the elements provided for in group H01L29/16, e.g. alloys
- H01L29/165—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System including two or more of the elements provided for in group H01L29/16, e.g. alloys in different semiconductor regions, e.g. heterojunctions
Abstract
The present invention relates to a kind of graphene double heterojunction and preparation method thereof, wherein, preparation method includes：(a) backing material is chosen；(b) 3C SiC epitaxial layers are grown in the substrate material surface；(c) the 3C SiC epitaxial layers are pyrolyzed and form graphene layer to complete the preparation of the graphene double heterojunction.Graphene prepared by the present invention/3C SiC/4H SiC double-heterostructures, band difference is different very big, but the Lattice Matching between graphene/3C SiC/4H SiC threes is very good, therefore it is prepared by the double heterojunction that low defect can be achieved that transition zone is not needed between three；All growth courses of the present invention can be completed with an equipment, be advantageous to the drop of cost.
Description
Technical field
The invention belongs to technical field of semiconductors, more particularly to a kind of graphene double heterojunction and a kind of graphene are double heterogeneous
The preparation method of knot.
Background technology
The contact transition region appellation hetero-junctions that a kind of semiconductor material growing is formed on another semi-conducting material, according to
It is divided into homotype hetero-junctions (Pp or Nn) or special-shaped (Pn or Np) hetero-junctions according to the conduction type of two kinds of materials.Due to two kinds of heterogeneous materials
Material has different the physical-chemical parameters (such as electron affinity, band structure, dielectric constant and lattice constant etc.), makes hetero-junctions
With a series of unexistent characteristic of homojunctions, it will obtain that there is the irrealizable function of some homojunctions on a device design.
For example, very high injection ratio can be obtained by doing emitter stage with broadband side in heterojunction transistor, therefore can be obtained higher
Multiplication factor.
The unique physicochemical properties of graphene, are expected in semiconductor, photovoltaic, lithium battery, biology, medical treatment, display etc.
Tradition and new industry bring revolutionary advancement.The preparation method of wafer level graphene has CVD epitaxial growth methods and SiC high at present
Warm solution.CVD epitaxial growth method shortcomings are that energy resource consumption is big, and the graphene sheet layer of acquisition and substrate interaction are strong, mostly
When metal substrate on graphene need carry out being transferred on dielectric (such as SiO2Deng substrate), recycle its electrology characteristic
Carry out device preparation.Therefore whole process complexity is higher, and material property loss is serious, and material is easily contaminated, also thus brings
A series of problems, such as process repeatability.SiC high temperature pyrolytic cracking (HTP)s are under UHV condition, pass through electron bombardment, acid cleaning etc.
Means remove oxide on monocrystalline 4H/6H-SiC substrates, then by substrate under vacuum or protective gas environment (1250-1450 DEG C)
Heating, makes surface of SiC Si atoms distil, and the C atoms left reconstruct to form graphene.
With the extensive use of graphene, how to improve its manufacture craft and reduce the increasingly heavier of its cost of manufacture change
Will.
The content of the invention
Therefore, to solve technological deficiency and deficiency existing for prior art, the present invention proposes a kind of graphene double heterojunction
And preparation method thereof.
Specifically, An embodiment provides a kind of preparation method of graphene double heterojunction, including：
(a) backing material is chosen；
(b) 3C-SiC epitaxial layers are grown in the substrate material surface；
(c) processing is carried out to the 3C-SiC epitaxial layers using pyrolysismethod and forms graphene layer.
Wherein, the backing material is 4H-SiC or 6H-SiC.
In one embodiment of the invention, step (b) includes：
(b1) backing material is cleaned using standard cleaning technique；
(b2) backing material is put into epitaxial furnace, introduces Si sources, be heated to 1350 DEG C~1400 DEG C；
(b3) keeping temperature is constant and closes Si sources, removes the Si sources in epitaxial furnace, introduces silane and propane as growth
Source gas, epitaxial growth is to form the 3C-SiC epitaxial layers.
In one embodiment of the invention, the 3C-SiC epitaxy layer thickness is 0.1-1 μm.
In one embodiment of the invention, the C members in the Si elements and the propane described in step (b3) in silane
Plain ratio is 1:1.
In one embodiment of the invention, the flow of the silane is 21sccm, and the flow of the propane is 7sccm；
The epitaxial growth time is 30min；The 3C-SiC epitaxy layer thickness is 0.5 μm.
In one embodiment of the invention, processing is carried out to the 3C-SiC epitaxial layers using pyrolysismethod and forms graphene
Layer, including：At a temperature of 1300~1500 DEG C, in argon atmosphere, using chlorine as auxiliary gas, the 3C-SiC layers are entered
Row pyrolysis processing in the 3C-SiC epitaxial layers to form the graphene layer.
Another embodiment of the present invention provides a kind of graphene double heterojunction, including：SiC substrate, 3C-SiC layers, graphite
Alkene layer；Wherein, the graphene double heterojunction is prepared as the method described in any of the above-described embodiment forms
Compared with prior art, the invention has the advantages that：
1) graphene provided by the invention/3C-SiC/4H-SiC double-heterostructures, wherein, above three's band difference is different
It is very big, but the Lattice Matching between three is very good, therefore it is the double different of achievable low defect that transition zone is not needed between three
It is prepared by matter knot；
2) all growth courses of the present invention can be completed with an equipment, be advantageous to the drop of cost.
Brief description of the drawings
In order to illustrate the technical solution of the embodiments of the present invention more clearly, required use in being described below to embodiment
Accompanying drawing be briefly described, it should be apparent that, drawings in the following description are only some embodiments of the present invention, for this
For the those of ordinary skill of field, on the premise of not paying creative work, it can also be obtained according to these accompanying drawings other
Accompanying drawing.
Fig. 1 is a kind of preparation method flow chart for graphene double heterojunction that one embodiment of the invention provides；
Fig. 2 a- Fig. 2 c are a kind of preparation technology schematic diagram for graphene double heterojunction that another embodiment of the present invention provides；
Fig. 3 a- Fig. 3 d are a kind of graphene double heterojunction based on pre-etching substrate that yet another embodiment of the invention provides
Preparation technology schematic diagram；
Fig. 4 is a kind of structural representation for graphene double heterojunction that further embodiment of this invention provides.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation describes, it is clear that described embodiment is only part of the embodiment of the present invention, rather than whole embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art are obtained every other under the premise of creative work is not made
Embodiment, belong to the scope of protection of the invention.
Embodiment one
Fig. 1 is referred to, Fig. 1 is a kind of preparation method flow chart of graphene double heterojunction provided in an embodiment of the present invention,
Including：
(a) backing material is chosen；
(b) 3C-SiC epitaxial layers are grown in the substrate material surface；
(c) processing is carried out to the 3C-SiC epitaxial layers using pyrolysismethod and forms graphene layer.
Wherein, the backing material is 4H-SiC or 6H-SiC.
Preferably, step (b) can include：
(b1) backing material is cleaned using standard cleaning technique；
(b2) backing material is put into epitaxial furnace, introduces Si sources, be heated to 1350 DEG C~1400 DEG C；
(b3) keeping temperature is constant and closes Si sources, removes the Si sources in epitaxial furnace, introduces silane and propane as growth
Source gas, epitaxial growth is to form the 3C-SiC epitaxial layers.
Wherein, the 3C-SiC epitaxy layer thickness is 0.1-1 μm.
Wherein, the C element ratio in the Si elements and the propane described in step (b3) in silane is 1:1.
Preferably, the flow of the silane is 21sccm, and the flow of the propane is 7sccm；The epitaxial growth time is
30min；The 3C-SiC epitaxy layer thickness is 0.5 μm.
Further, processing is carried out to the 3C-SiC epitaxial layers using pyrolysismethod and forms graphene layer, including：1300
At a temperature of~1500 DEG C, in argon atmosphere, using chlorine as auxiliary gas, to the 3C-SiC layers carry out pyrolysis processing with
The graphene layer is formed in the 3C-SiC epitaxial layers.
Graphene provided by the invention/3C-SiC/4H-SiC double-heterostructures, wherein, above three's band difference is different very
Greatly, the Lattice Matching but between three is very good, therefore it is the double heterogeneous of achievable low defect that transition zone is not needed between three
It is prepared by knot.
Embodiment two
Specifically, the present embodiment is so that the Si in 4H-SiC substrates looks unfamiliar long graphene as an example；Graphene/3C- is discussed in detail
The preparation method of SiC/4H-SiC double heterojunctions；
Further, the preparation method is equally applicable to the C of 4H-SiC substrates and looked unfamiliar long graphene or 6H-SiC substrate
The look unfamiliar C of long graphene or 6H-SiC substrate of Si look unfamiliar long graphene.
Refer to Fig. 2 a- Fig. 2 c, Fig. 2 a- Fig. 2 c is a kind of preparation of graphene double heterojunction provided in an embodiment of the present invention
Process schematic representation, the preparation method comprise the following steps：
S201,4H-SiC substrates 201 are chosen, as shown in Figure 2 a.
S202, using RCA standard cleaning techniques, cleaning treatment is carried out to the material of substrate 201；
S203, Si sources are introduced in epitaxial furnace, under the Si element atmosphere in epitaxial furnace, by including the substrate 201
Whole material is heated to 1350~1400 DEG C；Keeping temperature is constant and closes Si sources 3min, then removes the Si members in epitaxial furnace
Element.
S204, as shown in Figure 2 b, introduces 21sccm silane and 7sccm propane, epitaxial growth successively in epitaxial furnace
30min；To obtain 3C-SiC epitaxial layer 202 of the thickness as 500nm.Wherein, can during growing 3C-SiC epitaxial layers 202
Outer layer doping concentration and type are adjusted in growth course as needed.
S206, as shown in Figure 2 c, close hydrogen, Sources gas and impurity gas；In argon atmosphere, temperature is
At 1300~1500 DEG C；Using chlorine as auxiliary gas, pyrolysis processing is carried out to the 3C-SiC epitaxial layers, makes the 3C-SiC
The Si atoms distillation of layer surface, the C atoms left are reconstructed to form the graphene layer 203.Wherein, when graphene target is adulterated
When type and concentration and inconsistent 3C-SiC layers, graphene layer can be entered by the mode such as annealing under ion implanting and particular atmosphere
Row doping adjustment.
Forbidden band is widely different between graphene, 3C-SiC and 4H-SiC in the present invention；Wherein, graphene is pyramid type energy
Band, an energy gap can be opened on sic substrates；3C-SiC is non-polarized semiconductor material with wide forbidden band, and its energy gap is
2.3eV；4H-SiC is polarization wide bandgap semiconductor, and its energy gap is 3.2eV.According to the difference of 4H-SiC polarization characteristics,
3C-SiC epitaxial layers are grown on Si faces or C faces can produce SQW in valence band or conduction band respectively, so as to formed two-dimensional electron gas or
Hole gas.And then it is that three's band difference is different very big to form a great advantage, but the Lattice Matching between three is very good, because
It is prepared by the double heterojunction that low defect can be achieved that transition zone is not needed between this three.For example, between 3C-SiC and 4H-SiC
Lattice mismatch can be ignored.It is seldom the defects of between lattice because incorgruous matching degree is very good between graphene and 3C-SiC.
The doping concentration on doping way in situ regulation SiC top layers can be used.Simultaneously because the doping concentration and SiC of graphene
The doping concentration of layer is relevant, therefore the doping concentration of final graphene layer can also be adjusted by 3C-SiC layers doping concentration.With VP508
Exemplified by epitaxial furnace, when 3C-SiC epitaxial layers are identical with graphene layer doping type, all flows can be in same growth chamber
Complete；When extension 3C-SiC layers and graphene layer doping type difference, it is necessary to which transforming growth chamber completes extension.It is all to grow
Cheng Jun can be completed with an equipment.Be advantageous to the reduction of cost.
Embodiment three
Further, the present embodiment carries out pre-etching to backing material on the basis of above-described embodiment and forms pre-etching lining
Bottom.
Specifically, it is double heterogeneous for a kind of graphene provided in an embodiment of the present invention that Fig. 3 a- Fig. 3 d, Fig. 3 a- Fig. 3 d be refer to
The preparation technology schematic diagram of knot, the preparation method comprise the following steps：
S301,4H-SiC substrates 301 are chosen, as shown in Figure 3 a.
S302, the etching 4H-SiC substrates 301 form pre-etching substrate 302, as shown in Figure 3 b.
S3021, in the consecutive deposition metal of 4H-SiC substrates 301 and photoresist；
S3022, using standard development technique, using mask plate, etch the photoresist, form the pre-etching figure；
S3023, using ICP or RIE etching technics, form the pre-etching lining in the 4H-SiC substrate etchings table top
Bottom 302, wherein, the mesa dimensions are 500 μm of 500 μ m to 5mm × 5mm；Depth is 3 μm.
S303, using RCA standard cleaning techniques, the whole material including the pre-etching substrate 302 is carried out at cleaning
Reason；Wherein, introduce RCA standard cleanings technique and can remove the pollution that dry etching is brought.
S304, introduce Si sources in epitaxial furnace, under the Si element atmosphere in epitaxial furnace, the pre-etching substrate will be included
302 whole material is heated to 1350~1400 DEG C；Keeping temperature is constant and closes Si sources 3min, then removes in epitaxial furnace
Si elements.
S305, as shown in Figure 3 c, introduces 21sccm silane and 7sccm propane, epitaxial growth successively in epitaxial furnace
30min；To obtain 3C-SiC epitaxial layer 303 of the thickness as 500nm.Wherein, can during growing 3C-SiC epitaxial layers 303
Outer layer doping concentration and type are adjusted in growth course as needed.
S306, as shown in Figure 3 d, close hydrogen, Sources gas and impurity gas；In argon atmosphere, temperature is
At 1300~1500 DEG C；Using chlorine as auxiliary gas, pyrolysis processing is carried out to the 3C-SiC epitaxial layers, makes the 3C-SiC
The Si atoms distillation of layer surface, the C atoms left are reconstructed to form the graphene layer 304.Wherein, when graphene target is adulterated
When type and concentration and inconsistent 3C-SiC layers, graphene layer can be entered by the mode such as annealing under ion implanting and particular atmosphere
Row doping adjustment.
The present embodiment realizes the preparation of large area, uniformly continuous, highly crystalline quality graphene by pre-etching SiC substrate；
Influencing each other between defect can be effectively isolated, so as to can be different to reduce with the more preferable grapheme material of production quality on table top
The defects of matter junction structure.
Example IV
Fig. 4 is refer to, Fig. 4 is a kind of structural representation of graphene double heterojunction provided in an embodiment of the present invention.The stone
Black alkene double heterojunction is made of the above-mentioned preparation method as shown in Fig. 2 a- Fig. 2 c.Specifically, the graphene double heterojunction bag
Include：4H-SiC substrates 401,3C-SiC layers 402 and graphene layer 403.
To sum up, specific case used herein is set forth to the principle and embodiment of the present invention, and the above is implemented
The explanation of example is only intended to help the method and its core concept for understanding the present invention；Meanwhile for the general technology people of this area
Member, according to the thought of the present invention, there will be changes in specific embodiments and applications, to sum up, in this specification
Appearance be should not be construed as limiting the invention, and protection scope of the present invention should be defined by appended claim.
Claims (8)
- A kind of 1. preparation method of graphene double heterojunction, it is characterised in that including：(a) backing material is chosen；(b) 3C-SiC epitaxial layers are grown in the substrate material surface；(c) the 3C-SiC epitaxial layers are pyrolyzed and form graphene layer to complete the preparation of the graphene double heterojunction.
- 2. preparation method according to claim 1, it is characterised in that the backing material is 4H-SiC or 6H-SiC.
- 3. preparation method according to claim 1, it is characterised in that step (b) includes：(b1) backing material is cleaned using standard cleaning technique；(b2) backing material is put into epitaxial furnace, introduces Si sources, be heated to 1350 DEG C~1400 DEG C；(b3) keeping temperature is constant and closes Si sources, removes the Si sources in epitaxial furnace, introduces silane and propane as growth source gas Body, epitaxial growth is to form the 3C-SiC epitaxial layers.
- 4. the preparation method according to claim 1 or 3, it is characterised in that the 3C-SiC epitaxy layer thickness is 0.1-1 μ m。
- 5. preparation method according to claim 3, it is characterised in that the Si elements in silane and institute described in step (b3) It is 1 to state the C element ratio in propane:1.
- 6. preparation method according to claim 3, it is characterised in that the flow of the silane is 21sccm, the propane Flow be 7sccm；The epitaxial growth time is 30min；The 3C-SiC epitaxy layer thickness is 0.5 μm.
- 7. preparation method according to claim 1, it is characterised in that carried out using pyrolysismethod to the 3C-SiC epitaxial layers Processing forms graphene layer, including：At a temperature of 1300~1500 DEG C, in argon atmosphere, using chlorine as auxiliary gas, heat is carried out to the 3C-SiC layers Solution is handled to form the graphene layer in the 3C-SiC epitaxial layers.
- A kind of 8. graphene double heterojunction, it is characterised in that including：SiC substrate, 3C-SiC layers, graphene layer；Wherein, it is described Graphene double heterojunction is prepared as the method described in any one of claim 1~7 and formed.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116514112A (en) * | 2023-06-09 | 2023-08-01 | 中电科先进材料技术创新有限公司 | Preparation method of large-area graphene on silicon surface |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102560414A (en) * | 2012-01-03 | 2012-07-11 | 西安电子科技大学 | Method for preparing graphene on 3C-SiC substrate |
| CN102933491A (en) * | 2010-06-07 | 2013-02-13 | 电子材料技术研究所 | Method of graphene manufacturing |
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| CN116514112A (en) * | 2023-06-09 | 2023-08-01 | 中电科先进材料技术创新有限公司 | Preparation method of large-area graphene on silicon surface |
| CN116514112B (en) * | 2023-06-09 | 2023-12-19 | 中电科先进材料技术创新有限公司 | Preparation method of large-area graphene on silicon surface |
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