CN105826173A - In-situ etching method for SiC hetero epitaxial growth - Google Patents
In-situ etching method for SiC hetero epitaxial growth Download PDFInfo
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- CN105826173A CN105826173A CN201510008223.7A CN201510008223A CN105826173A CN 105826173 A CN105826173 A CN 105826173A CN 201510008223 A CN201510008223 A CN 201510008223A CN 105826173 A CN105826173 A CN 105826173A
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Abstract
The invention provides an in-situ etching method for SiC hetero epitaxial growth. The method comprises steps: a processed SiC substrate processed by using ortho-axis 4H or 6H original silicon carbide SiC substrate is subjected to ultrasonic cleaning; an alkaline mixture is used for boiling the processed SiC substrate at a temperature of 85 DEG C for 20 m; an acid mixed solution is used for immersing the processed SiC substrate at a temperature of 85 DEG C for 20 m; an epitaxial furnace is used for carrying out in-situ etching on the processed SiC substrate with a zero deflection angle; at a temperature of 1400 DEG C, inrush of a propane protection gas is carried out to be compared with a pure hydrogen etching condition, and at a temperature of 1500 DEG C, inrush of a silane protection gas is carried out to be compared with a pure hydrogen etching condition; and a well-etched SiC epitaxial layer is taken out from the epitaxial furnace. According to the in-situ etching method for SiC hetero epitaxial growth of the invention, the best substrate surface morphology can be etched, and the SiC hetero epitaxial growth quality is enhanced.
Description
Technical field
The present invention relates to technical field of semiconductor, particularly relate to a kind of original position lithographic method for SiC heteroepitaxial growth.
Background technology
Carborundum SiC is as one of the representative of semiconductor material with wide forbidden band, there is energy gap big, breakdown electric field is high, thermal conductivity is big, electronics saturation drift velocity is high, the superior character such as the chemical stability that capability of resistance to radiation is strong and good, become and manufacture a new generation's microelectronic component and the key semiconductor material of circuit after germanium, silicon, GaAs.Other hetero-junctions such as SiC/Si and AlGaN/GaN, are traditional being formed by chemical constituent change, and silicon carbide polytypes hetero-junctions are constant by chemical composition, prepared by crystal formation sudden change.Therefore the polymorphous hetero-junctions of carborundum has the advantage that
1) having insignificant thermally matched and that Lattice Matching: 3C-SiC and 6H-SiC is in (0001) face lattice mismatch less than 0.1%, prepare at substrate, process and in later device technology, the thermal mismatching of the two is less than 0.1%.Compared to other heterojunction devices such as SiC/Si and GaN/AlGaN, silicon carbide polytypes hetero-junctions has more preferable interfacial structure, and its device has more preferable stability and reliability；
2), there is not the mutual Elements Diffusion between hetero-junctions monocrystalline in identical chemical property；
3) 3C/6H-SiC hetero-junctions can reach about 2000cm comparable with AlGaN/GaN2The room temperature mobilities of/Vs and 3*1012cm-2Face electron density.
Feature based on silicon carbide polytypes hetero-junctions, adds carborundum itself and its distinctive character of many types of hetero-junctions so that it is have certain advantage and prospect in great power LED preparation and microwave power device application aspect.
But in SiC substrate, there is various defect, and these defects during carborundum hetero-epitaxy, would generally be inherited, device performance is produced and has a strong impact on.The impact how reducing defect becomes the focus of research at present.
Summary of the invention
It is an object of the invention to the defect for prior art, propose a kind of original position lithographic method for SiC heteroepitaxial growth, to reduce the defect of the outer Yanzhong of SiC.
For achieving the above object, the invention provides a kind of original position lithographic method for SiC heteroepitaxial growth, described method includes:
Step 1, utilizes ultrasonic being carried out by the processing SiC substrate that the original silicon carbide silicon SiC substrate utilizing positive axis 4H or 6H is processed into；
Step 2, utilizes alkalescence intermixture that described processing SiC substrate is boiled at a temperature of 85 degree bath 20 minutes, then uses deionized water rinsing；
Step 3, utilizes acid mixed solution described processing SiC substrate to be soaked 20 minutes at a temperature of 85 degree, then uses deionized water rinsing；
Step 4, utilizes epitaxial furnace to carry out the described processing SiC substrate of zero drift angle in situ and etches, and etching temperature is 1400-1600 DEG C；Pressure is 50-200mbar；Hydrogen flowing quantity is 60-200L/min；Etch period is 5-30min；
Step 5, is passed through propane protective gas at 1400 DEG C compared with pure hydrogen etching condition, is passed through protected silane gas at 1500 DEG C compared with pure hydrogen etching condition；
Step 6, takes out the SiC epitaxial wafer etched from described epitaxial furnace.
Further, also include after described step 2: utilize concentrated sulphuric acid mixed liquor that described processing SiC substrate is boiled at a temperature of 85 degree bath 20 minutes, then use deionized water rinsing.
Also include after described step 3: utilize the hydrofluoric acid solution of 5% by described processing SiC substrate dipping bath 10 minutes, then with hot deionized water and cold deionized water rinsing.
Further, described step 4 is particularly as follows: utilize epitaxial furnace to carry out the described processing SiC substrate of zero drift angle in situ and etch, and etching temperature is 1400 DEG C, 1500 DEG C or 1600 DEG C；Pressure is 50-200mbar；Hydrogen flowing quantity is 60-200L/min；Etch period is 5-30min.
Further, described step 4 is particularly as follows: utilize epitaxial furnace to carry out the described processing SiC substrate of zero drift angle in situ and etch, and etching temperature is 1400-1600 DEG C；Pressure is 50-200mbar；Hydrogen flowing quantity is 60-200L/min；Etch period is 5min, 10min or 15min.
Further, described step 4 is particularly as follows: utilize epitaxial furnace to carry out the described processing SiC substrate of zero drift angle in situ and etch, and etching temperature is 1500 DEG C；Pressure is 100mbar；Hydrogen flowing quantity is 82L/min；Etch period is 15min.
Further, also include before described step 6: after described epitaxial furnace temperature is reduced to 700 DEG C, stop being passed through hydrogen, and extracting vacuum is to less than 1 × 10-7mbar；It is passed through, to described epitaxial furnace, the argon that flow is 12-20L/min, makes length have the described processing SiC substrate of silicon carbide epitaxial layers to continue cooling under ar gas environment.
Further, described step 6 specifically includes: slowly the described epitaxial furnace air pressure of raising is to normal pressure, makes described processing SiC substrate naturally cool to room temperature, takes out SiC epitaxial wafer.
The present invention can etch the original position etching technics of optimal substrate surface topography for the original position lithographic method of SiC heteroepitaxial growth, promotes SiC heteroepitaxial growth quality.
Accompanying drawing explanation
Fig. 1 is the present invention flow chart for the original position lithographic method of SiC heteroepitaxial growth.
Detailed description of the invention
Below by drawings and Examples, technical scheme is described in further detail.
Fig. 1 is the present invention flow chart for the original position lithographic method of SiC heteroepitaxial growth, as it can be seen, the method comprise the steps that
Step 1, utilizes ultrasonic being carried out by the processing SiC substrate that the original silicon carbide silicon SiC substrate utilizing positive axis 4H or 6H is processed into；
Step 2, utilizes alkalescence intermixture that processing SiC substrate is boiled at a temperature of 85 degree bath 20 minutes, then uses deionized water rinsing；
Preferably, can also include after this step: utilize concentrated sulphuric acid mixed liquor that processing SiC substrate is boiled at a temperature of 85 degree bath 20 minutes, then use deionized water rinsing.
Step 3, utilizes acid mixed solution processing SiC substrate to be soaked 20 minutes at a temperature of 85 degree, then uses deionized water rinsing；
Preferably, can also include after this step: utilize the hydrofluoric acid solution of 5% will process SiC substrate dipping bath 10 minutes, then with hot deionized water and cold deionized water rinsing.
Step 4, utilizes epitaxial furnace to carry out the processing SiC substrate of zero drift angle in situ and etches, and etching temperature is 1400-1600 DEG C；Pressure is 50-200mbar；Hydrogen flowing quantity is 60-200L/min；Etch period is 5-30min；
In the original position etching processing of this step, a kind of preferably utilize epitaxial furnace the processing SiC substrate of zero drift angle to be carried out in situ to etch；Pressure is 50-200mbar；Hydrogen flowing quantity is 60-200L/min；Etch period is 5-30min；Etching temperature is can be 1400 DEG C, 1500 DEG C or 1600 DEG C.
Another kind preferably utilizes epitaxial furnace to carry out the processing SiC substrate of zero drift angle in situ and etches, and etching temperature is 1400-1600 DEG C；Pressure is 50-200mbar；Hydrogen flowing quantity is 60-200L/min；Etch period is 5min, 10min or 15min.
Another preferably utilizes epitaxial furnace to carry out the processing SiC substrate of zero drift angle in situ and etches, and etching temperature is 1500 DEG C；Pressure is 100mbar；Hydrogen flowing quantity is 82L/min；Etch period is 15min.
Step 5, is passed through propane protective gas at 1400 DEG C compared with pure hydrogen etching condition, is passed through protected silane gas at 1500 DEG C compared with pure hydrogen etching condition；
Step 6, takes out the SiC epitaxial wafer etched from epitaxial furnace.
Can also include before concrete step 6: after epitaxial furnace temperature is reduced to 700 DEG C, stop being passed through hydrogen, and extracting vacuum is to less than 1 × 10-7mbar；It is passed through, to epitaxial furnace, the argon that flow is 12-20L/min, makes length have the processing SiC substrate of silicon carbide epitaxial layers to continue cooling under ar gas environment.
And step 6 just can be specially slowly raising epitaxial furnace air pressure and, to normal pressure, make processing SiC substrate naturally cool to room temperature, take out SiC epitaxial wafer.
The present invention can etch the original position etching technics of optimal substrate surface topography for the original position lithographic method of SiC heteroepitaxial growth, promotes SiC heteroepitaxial growth quality.
Above-described detailed description of the invention; the purpose of the present invention, technical scheme and beneficial effect are further described; it is it should be understood that; the foregoing is only the detailed description of the invention of the present invention; the protection domain being not intended to limit the present invention; all within the spirit and principles in the present invention, any modification, equivalent substitution and improvement etc. done, should be included within the scope of the present invention.
Claims (7)
1. the original position lithographic method for SiC heteroepitaxial growth, it is characterised in that described method includes:
Step 1, utilizes ultrasonic being carried out by the processing SiC substrate that the original silicon carbide silicon SiC substrate utilizing positive axis 4H or 6H is processed into；
Step 2, utilizes alkalescence intermixture that described processing SiC substrate is boiled at a temperature of 85 degree bath 20 minutes, then uses deionized water rinsing；
Step 3, utilizes acid mixed solution described processing SiC substrate to be soaked 20 minutes at a temperature of 85 degree, then uses deionized water rinsing；
Step 4, utilizes epitaxial furnace to carry out the described processing SiC substrate of zero drift angle in situ and etches, and etching temperature is 1400-1600 DEG C；Pressure is 50-200mbar；Hydrogen flowing quantity is 60-200L/min；Etch period is 5-30min；
Step 5, is passed through propane protective gas at 1400 DEG C compared with pure hydrogen etching condition, is passed through protected silane gas at 1500 DEG C compared with pure hydrogen etching condition；
Step 6, takes out the SiC epitaxial wafer etched from described epitaxial furnace.
Method the most according to claim 1, it is characterised in that:
Also include after described step 2: utilize concentrated sulphuric acid mixed liquor that described processing SiC substrate is boiled at a temperature of 85 degree bath 20 minutes, then use deionized water rinsing.
Also include after described step 3: utilize the hydrofluoric acid solution of 5% by described processing SiC substrate dipping bath 10 minutes, then with hot deionized water and cold deionized water rinsing.
Method the most according to claim 1, it is characterised in that described step 4 is particularly as follows: utilize epitaxial furnace to carry out the described processing SiC substrate of zero drift angle in situ and etch, and etching temperature is 1400 DEG C, 1500 DEG C or 1600 DEG C；Pressure is 50-200mbar；Hydrogen flowing quantity is 60-200L/min；Etch period is 5-30min.
Method the most according to claim 1, it is characterised in that described step 4 is particularly as follows: utilize epitaxial furnace to carry out the described processing SiC substrate of zero drift angle in situ and etch, and etching temperature is 1400-1600 DEG C；Pressure is 50-200mbar；Hydrogen flowing quantity is 60-200L/min；Etch period is 5min, 10min or 15min.
Method the most according to claim 1, it is characterised in that described step 4 is particularly as follows: utilize epitaxial furnace to carry out the described processing SiC substrate of zero drift angle in situ and etch, and etching temperature is 1500 DEG C；Pressure is 100mbar；Hydrogen flowing quantity is 82L/min；Etch period is 15min.
Method the most according to claim 1, it is characterised in that also include before described step 6: after described epitaxial furnace temperature is reduced to 700 DEG C, stops being passed through hydrogen, and extracting vacuum is to less than 1 × 10-7mbar；It is passed through, to described epitaxial furnace, the argon that flow is 12-20L/min, makes length have the described processing SiC substrate of silicon carbide epitaxial layers to continue cooling under ar gas environment.
Method the most according to claim 6, it is characterised in that described step 6 specifically includes: slowly the described epitaxial furnace air pressure of raising is to normal pressure, makes described processing SiC substrate naturally cool to room temperature, takes out SiC epitaxial wafer.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510008223.7A CN105826173A (en) | 2015-01-07 | 2015-01-07 | In-situ etching method for SiC hetero epitaxial growth |
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| CN201510008223.7A CN105826173A (en) | 2015-01-07 | 2015-01-07 | In-situ etching method for SiC hetero epitaxial growth |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107845567A (en) * | 2017-09-25 | 2018-03-27 | 重庆文理学院 | Graphene double heterojunction and preparation method thereof |
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| US20050252525A1 (en) * | 2004-05-12 | 2005-11-17 | United Microelectronics Corp. | Method of cleaning a semiconductor substrate and cleaning recipes |
| US20060252272A1 (en) * | 2003-05-28 | 2006-11-09 | Sakae Koyata | Method of processing silicon wafer |
| JP2007053178A (en) * | 2005-08-17 | 2007-03-01 | Sumco Corp | Method of manufacturing silicon wafer |
| CN103474332A (en) * | 2013-09-06 | 2013-12-25 | 西安电子科技大学 | Etching method for promoting Web Growth |
| CN103489760A (en) * | 2013-09-06 | 2014-01-01 | 西安电子科技大学 | SiC substrate homoepitaxy carbon silicon double-atomic-layer film method |
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- 2015-01-07 CN CN201510008223.7A patent/CN105826173A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060252272A1 (en) * | 2003-05-28 | 2006-11-09 | Sakae Koyata | Method of processing silicon wafer |
| US20050252525A1 (en) * | 2004-05-12 | 2005-11-17 | United Microelectronics Corp. | Method of cleaning a semiconductor substrate and cleaning recipes |
| JP2007053178A (en) * | 2005-08-17 | 2007-03-01 | Sumco Corp | Method of manufacturing silicon wafer |
| CN103474332A (en) * | 2013-09-06 | 2013-12-25 | 西安电子科技大学 | Etching method for promoting Web Growth |
| CN103489760A (en) * | 2013-09-06 | 2014-01-01 | 西安电子科技大学 | SiC substrate homoepitaxy carbon silicon double-atomic-layer film method |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107845567A (en) * | 2017-09-25 | 2018-03-27 | 重庆文理学院 | Graphene double heterojunction and preparation method thereof |
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