CN104538296A - In-situ etching method - Google Patents
In-situ etching method Download PDFInfo
- Publication number
- CN104538296A CN104538296A CN201510010448.6A CN201510010448A CN104538296A CN 104538296 A CN104538296 A CN 104538296A CN 201510010448 A CN201510010448 A CN 201510010448A CN 104538296 A CN104538296 A CN 104538296A
- Authority
- CN
- China
- Prior art keywords
- sic substrate
- etching
- temperature
- described processing
- epitaxial furnace
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005530 etching Methods 0.000 title claims abstract description 38
- 238000000034 method Methods 0.000 title claims abstract description 24
- 238000011065 in-situ storage Methods 0.000 title abstract 4
- 239000000758 substrate Substances 0.000 claims abstract description 47
- 239000001257 hydrogen Substances 0.000 claims abstract description 22
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 22
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 19
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims abstract description 4
- 238000004506 ultrasonic cleaning Methods 0.000 claims abstract description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 62
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 55
- 239000008367 deionised water Substances 0.000 claims description 15
- 229910021641 deionized water Inorganic materials 0.000 claims description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 15
- 239000007789 gas Substances 0.000 claims description 12
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 3
- 239000002253 acid Substances 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims description 3
- 238000007598 dipping method Methods 0.000 claims description 3
- 150000002431 hydrogen Chemical class 0.000 claims description 3
- 239000011259 mixed solution Substances 0.000 claims description 3
- 239000001294 propane Substances 0.000 claims description 3
- 230000001681 protective effect Effects 0.000 claims description 3
- 229910000077 silane Inorganic materials 0.000 claims description 3
- 239000000243 solution Substances 0.000 claims description 3
- 238000009835 boiling Methods 0.000 abstract 2
- 239000003795 chemical substances by application Substances 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 230000007547 defect Effects 0.000 description 5
- 230000008569 process Effects 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 229910002704 AlGaN Inorganic materials 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000001534 heteroepitaxy Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000037230 mobility Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02378—Silicon carbide
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention relates to an in-situ etching method. The method comprises the steps that ultrasonic cleaning is carried out on a processed SiC substrate processed through an original positive-axis 4H or 6H SiC substrate; the processed SiC substrate is subjected to a boiling bath with an alkaline mixed agent for 20 min at 85 DEG C; the processed SiC substrate is subjected to a boiling bath with a concentrated sulfuric acid mixed liquid for 20 min at 85 DEG C; in-situ etching is carried out on the zero-deflection processed SiC substrate through an epitaxial furnace; when the temperature of the epitaxial furnace drops to be lower than 700 DEG C, hydrogen charging is stopped, and vacuumizing is carried out till the vacuum degree is lower than 1*10<-7>mbar; the air pressure of the epitaxial furnace is slowly increased to a constant pressure, so that the processed SiC substrate is naturally cooled to an indoor temperature, and then an SiC epitaxial wafer is taken out. By means of the in-situ etching method, the optimal substrate surface morphology can be formed through etching, and the SiCheteroepitaxial growth quality can be improved.
Description
Technical field
The present invention relates to technical field of semiconductor, particularly relate to a kind of original position lithographic method.
Background technology
Carborundum SiC is as one of the representative of semiconductor material with wide forbidden band, there is energy gap large, breakdown electric field is high, thermal conductivity is large, electronics saturation drift velocity is high, the superior character such as the chemical stability that capability of resistance to radiation is strong and good, become the key semiconductor material manufacturing microelectronic component of new generation and circuit after germanium, silicon, GaAs.Other heterojunction such as SiC/Si and AlGaN/GaN, be traditional being formed by chemical constituent change, and silicon carbide polytypes heterojunction is constant by chemical composition, prepared by crystal formation sudden change.Therefore the polymorphous heterojunction of carborundum has the following advantages:
1) there is insignificant heat coupling and Lattice Matching: 3C-SiC and 6H-SiC is less than 0.1% at the lattice mismatch in (0001) face, prepare at substrate, in process and later device technology, the thermal mismatching of the two is less than 0.1%.Compared to other heterojunction devices such as SiC/Si and GaN/AlGaN, silicon carbide polytypes heterojunction has better interfacial structure, and its device has better stability and reliability;
2), there is not the mutual Elements Diffusion between heterojunction monocrystalline in identical chemical property;
3) 3C/6H-SiC heterojunction can reach the about 2000cm comparable with AlGaN/GaN
2the room temperature mobilities of/V s and 3*10
12cm
-2face electron density.
Based on the feature of silicon carbide polytypes heterojunction, add carborundum itself and the distinctive character of its many types of heterojunction, make it have certain advantage and prospect in great power LED preparation and microwave power device application aspect.
But in SiC substrate, there is various defect, and in carborundum heteroepitaxy process, usually can inherit these defects, device performance is produced and has a strong impact on.The impact how reducing defect becomes the focus of research at present.
Summary of the invention
The object of the invention is the defect for prior art, propose a kind of original position lithographic method, to reduce the defect of the outer Yanzhong of SiC.
For achieving the above object, the invention provides a kind of original position lithographic method, described method comprises:
Step 1, utilizes ultrasonic cleaning by the processing SiC substrate utilizing the original silicon carbide silicon SiC substrate of positive axis 4H or 6H to be processed into;
Step 2, utilizes alkaline intermixture that described processing SiC substrate is boiled bath 20 minutes at 85 degree of temperature, then uses deionized water rinsing;
Step 3, utilizes concentrated sulfuric acid mixed liquor that described processing SiC substrate is boiled bath 20 minutes at 85 degree of temperature, then uses deionized water rinsing;
Step 4, utilize the described processing SiC substrate of epitaxial furnace to zero drift angle to carry out original position etching, etching temperature is 1400-1600 DEG C; Pressure is 50-200mbar; Hydrogen flowing quantity is 60-200L/min; Etch period is 5-30min;
Step 5, passes into propane protective gas compared with pure hydrogen etching condition at 1400 DEG C, passes into protected silane gas at 1500 DEG C compared with pure hydrogen etching condition;
Step 6, when described epitaxial furnace temperature is reduced to after 700 DEG C, stop passing into hydrogen, and extracting vacuum is to lower than 1 × 10-7mbar; Pass into described epitaxial furnace the argon gas that flow is 12-20L/min, make length have the described processing SiC substrate of silicon carbide epitaxial layers under ar gas environment, continue cooling;
Step 7, slowly improves described epitaxial furnace air pressure to normal pressure, makes described processing SiC substrate naturally cool to room temperature, take out SiC epitaxial wafer.
Further, also comprise after described step 3:
Utilize acid mixed solution described processing SiC substrate to be soaked 20 minutes at 85 degree of temperature, then use deionized water rinsing;
Utilize the hydrofluoric acid solution of 5% by described processing SiC substrate dipping bath 10 minutes, then use hot deionized water and cold deionized water rinsing.
Further, described step 4 is specially: utilize the described processing SiC substrate of epitaxial furnace to zero drift angle to carry out original position etching, etching temperature is 1400 DEG C, 1500 DEG C or 1600 DEG C; Pressure is 50-200mbar; Hydrogen flowing quantity is 60-200L/min; Etch period is 5-30min.
Further, described step 4 is specially: utilize the described processing SiC substrate of epitaxial furnace to zero drift angle to carry out original position etching, etching temperature is 1400-1600 DEG C; Pressure is 50-200mbar; Hydrogen flowing quantity is 60-200L/min; Etch period is 5min, 10min or 15min.
Further, described step 4 is specially: utilize the described processing SiC substrate of epitaxial furnace to zero drift angle to carry out original position etching, etching temperature is 1500 DEG C; Pressure is 100mbar; Hydrogen flowing quantity is 82L/min; Etch period is 15min.
Original position lithographic method of the present invention can etch the original position etching technics of best substrate surface topography, promotes SiC heteroepitaxial growth quality.
Accompanying drawing explanation
Fig. 1 is the flow chart of original position lithographic method of the present invention.
Embodiment
Below by drawings and Examples, technical scheme of the present invention is described in further detail.
Fig. 1 is the flow chart of original position lithographic method of the present invention, and as shown in the figure, method of the present invention comprises:
Step 101, utilizes ultrasonic cleaning by the processing SiC substrate utilizing the original silicon carbide silicon SiC substrate of positive axis 4H or 6H to be processed into;
Step 102, utilizes alkaline intermixture that processing SiC substrate is boiled bath 20 minutes at 85 degree of temperature, then uses deionized water rinsing;
Step 103, utilizes concentrated sulfuric acid mixed liquor that processing SiC substrate is boiled bath 20 minutes at 85 degree of temperature, then uses deionized water rinsing;
Preferably, can also comprise after step 3: utilize acid mixed solution will process SiC substrate and soak 20 minutes at 85 degree of temperature, then use deionized water rinsing; Utilize the hydrofluoric acid solution of 5% will process SiC substrate dipping bath 10 minutes, then use hot deionized water and cold deionized water rinsing.
Step 104, utilize the processing SiC substrate of epitaxial furnace to zero drift angle to carry out original position etching, etching temperature is 1400-1600 DEG C; Pressure is 50-200mbar; Hydrogen flowing quantity is 60-200L/min; Etch period is 5-30min;
In the original position etching processing of this step, a kind of processing SiC substrate of epitaxial furnace to zero drift angle that preferably utilize carries out original position etching; Pressure is 50-200mbar; Hydrogen flowing quantity is 60-200L/min; Etch period is 5-30min; Etching temperature is can be 1400 DEG C, 1500 DEG C or 1600 DEG C.
Another kind preferably utilizes the processing SiC substrate of epitaxial furnace to zero drift angle to carry out original position etching, and etching temperature is 1400-1600 DEG C; Pressure is 50-200mbar; Hydrogen flowing quantity is 60-200L/min; Etch period is 5min, 10min or 15min.
Another preferably utilizes the processing SiC substrate of epitaxial furnace to zero drift angle to carry out original position etching, and etching temperature is 1500 DEG C; Pressure is 100mbar; Hydrogen flowing quantity is 82L/min; Etch period is 15min.
Step 105, passes into propane protective gas compared with pure hydrogen etching condition at 1400 DEG C, passes into protected silane gas at 1500 DEG C compared with pure hydrogen etching condition;
Step 106, when epitaxial furnace temperature is reduced to after 700 DEG C, stop passing into hydrogen, and extracting vacuum is to lower than 1 × 10
-7mbar; Pass into epitaxial furnace the argon gas that flow is 12-20L/min, make length have the processing SiC substrate of silicon carbide epitaxial layers under ar gas environment, continue cooling;
Step 107, slowly improves epitaxial furnace air pressure to normal pressure, makes processing SiC substrate naturally cool to room temperature, take out SiC epitaxial wafer.
Original position lithographic method of the present invention can etch the original position etching technics of best substrate surface topography, promotes SiC heteroepitaxial growth quality.
Above-described embodiment; object of the present invention, technical scheme and beneficial effect are further described; be understood that; the foregoing is only the specific embodiment of the present invention; the protection range be not intended to limit the present invention; within the spirit and principles in the present invention all, any amendment made, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (5)
1. an original position lithographic method, is characterized in that, described method comprises:
Step 1, utilizes ultrasonic cleaning by the processing SiC substrate utilizing the original silicon carbide silicon SiC substrate of positive axis 4H or 6H to be processed into;
Step 2, utilizes alkaline intermixture that described processing SiC substrate is boiled bath 20 minutes at 85 degree of temperature, then uses deionized water rinsing;
Step 3, utilizes concentrated sulfuric acid mixed liquor that described processing SiC substrate is boiled bath 20 minutes at 85 degree of temperature, then uses deionized water rinsing;
Step 4, utilize the described processing SiC substrate of epitaxial furnace to zero drift angle to carry out original position etching, etching temperature is 1400-1600 DEG C; Pressure is 50-200mbar; Hydrogen flowing quantity is 60-200L/min; Etch period is 5-30min;
Step 5, passes into propane protective gas compared with pure hydrogen etching condition at 1400 DEG C, passes into protected silane gas at 1500 DEG C compared with pure hydrogen etching condition;
Step 6, when described epitaxial furnace temperature is reduced to after 700 DEG C, stop passing into hydrogen, and extracting vacuum is to lower than 1 × 10
-7mbar; Pass into described epitaxial furnace the argon gas that flow is 12-20L/min, make length have the described processing SiC substrate of silicon carbide epitaxial layers under ar gas environment, continue cooling;
Step 7, slowly improves described epitaxial furnace air pressure to normal pressure, makes described processing SiC substrate naturally cool to room temperature, take out SiC epitaxial wafer.
2. method according to claim 1, is characterized in that, also comprises after described step 3:
Utilize acid mixed solution described processing SiC substrate to be soaked 20 minutes at 85 degree of temperature, then use deionized water rinsing;
Utilize the hydrofluoric acid solution of 5% by described processing SiC substrate dipping bath 10 minutes, then use hot deionized water and cold deionized water rinsing.
3. method according to claim 1, is characterized in that, described step 4 is specially: utilize the described processing SiC substrate of epitaxial furnace to zero drift angle to carry out original position etching, etching temperature is 1400 DEG C, 1500 DEG C or 1600 DEG C; Pressure is 50-200mbar; Hydrogen flowing quantity is 60-200L/min; Etch period is 5-30min.
4. method according to claim 1, is characterized in that, described step 4 is specially: utilize the described processing SiC substrate of epitaxial furnace to zero drift angle to carry out original position etching, etching temperature is 1400-1600 DEG C; Pressure is 50-200mbar; Hydrogen flowing quantity is 60-200L/min; Etch period is 5min, 10min or 15min.
5. method according to claim 1, is characterized in that, described step 4 is specially: utilize the described processing SiC substrate of epitaxial furnace to zero drift angle to carry out original position etching, etching temperature is 1500 DEG C; Pressure is 100mbar; Hydrogen flowing quantity is 82L/min; Etch period is 15min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510010448.6A CN104538296A (en) | 2015-01-07 | 2015-01-07 | In-situ etching method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510010448.6A CN104538296A (en) | 2015-01-07 | 2015-01-07 | In-situ etching method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104538296A true CN104538296A (en) | 2015-04-22 |
Family
ID=52853803
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510010448.6A Pending CN104538296A (en) | 2015-01-07 | 2015-01-07 | In-situ etching method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104538296A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110117814A (en) * | 2018-02-05 | 2019-08-13 | 西安电子科技大学 | The preparation method of silicon carbide epitaxy with low-density C vacancy defect |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008159740A (en) * | 2006-12-22 | 2008-07-10 | Matsushita Electric Ind Co Ltd | METHOD FOR MANUFACTURING SiC SINGLE CRYSTAL, AND APPARATUS FOR MANUFACTURING SiC SINGLE CRYSTAL |
| CN103489759A (en) * | 2013-09-06 | 2014-01-01 | 西安电子科技大学 | SiC substrate homogeneous Web Growth epitaxy method |
| CN103489760A (en) * | 2013-09-06 | 2014-01-01 | 西安电子科技大学 | SiC substrate homoepitaxy carbon silicon double-atomic-layer film method |
-
2015
- 2015-01-07 CN CN201510010448.6A patent/CN104538296A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008159740A (en) * | 2006-12-22 | 2008-07-10 | Matsushita Electric Ind Co Ltd | METHOD FOR MANUFACTURING SiC SINGLE CRYSTAL, AND APPARATUS FOR MANUFACTURING SiC SINGLE CRYSTAL |
| CN103489759A (en) * | 2013-09-06 | 2014-01-01 | 西安电子科技大学 | SiC substrate homogeneous Web Growth epitaxy method |
| CN103489760A (en) * | 2013-09-06 | 2014-01-01 | 西安电子科技大学 | SiC substrate homoepitaxy carbon silicon double-atomic-layer film method |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110117814A (en) * | 2018-02-05 | 2019-08-13 | 西安电子科技大学 | The preparation method of silicon carbide epitaxy with low-density C vacancy defect |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108028186B (en) | SiC epitaxial wafer, device for producing SiC epitaxial wafer, method for producing SiC epitaxial wafer, and semiconductor device | |
| CN103489760A (en) | SiC substrate homoepitaxy carbon silicon double-atomic-layer film method | |
| CN103035496B (en) | A kind of growth GaN film on a si substrate and its preparation method and application | |
| CN103578960B (en) | A kind of method preparing Ohmic contact in surface on back side of SiC substrate | |
| CN104934318B (en) | A kind of preparation method of N-type low defect silicon carbide epitaxial wafer | |
| CN106711022B (en) | A kind of preparation method of growth doped interface clearly silicon carbide epitaxial film | |
| CN102664151B (en) | High-temperature annealing method for manufacturing silicon carbide device | |
| CN102915926B (en) | The device of a kind of transfer method for annealing of the Graphene based on AlN substrate and manufacture | |
| CN101246899A (en) | Secondary extension structure of silicon carbide | |
| CN103422164A (en) | Method for controlling N-type 4H-SiC homogenous epitaxial doping | |
| CN105869996A (en) | Silicon carbide epitaxial growth system and growth method thereof | |
| JP6850845B2 (en) | SiC epitaxial wafers and semiconductor devices | |
| CN102810465B (en) | One grows SiO in SiC material 2the method of passivation layer | |
| JP6112712B2 (en) | Method for manufacturing silicon carbide epitaxial wafer | |
| CN104538296A (en) | In-situ etching method | |
| CN105826173A (en) | In-situ etching method for SiC hetero epitaxial growth | |
| CN103474332B (en) | Promote the lithographic method of netted growth Web Growth | |
| CN103489759B (en) | SiC substrate grows Web Growth epitaxy method with endoplasmic reticular | |
| CN105006427B (en) | A kind of method that high-quality gallium nitride epitaxial structure is grown using low temperature buffer layer | |
| CN104576320A (en) | In-situ etching method for SiC heteroepitaxial growth | |
| CN105826165A (en) | In-situ etching method | |
| CN110079859A (en) | A kind of stripping means of SiC base GaN epitaxy piece | |
| KR20190087861A (en) | Semiconductor Structure for improvement of surface roughness and methods for production thereof | |
| CN107180748A (en) | A kind of deep hole cleaning method of SiC wafers | |
| CN114334651A (en) | HEMT (high electron mobility transistor) preparation method based on ultrathin gallium nitride self-supporting substrate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20150422 |