CN101246899A - Secondary extension structure of silicon carbide - Google Patents
Secondary extension structure of silicon carbide Download PDFInfo
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- CN101246899A CN101246899A CNA2008100546513A CN200810054651A CN101246899A CN 101246899 A CN101246899 A CN 101246899A CN A2008100546513 A CNA2008100546513 A CN A2008100546513A CN 200810054651 A CN200810054651 A CN 200810054651A CN 101246899 A CN101246899 A CN 101246899A
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- silicon carbide
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- carborundum
- epitaxial
- epitaxial layer
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- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 76
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 50
- 238000000407 epitaxy Methods 0.000 claims abstract description 35
- 238000002360 preparation method Methods 0.000 claims abstract description 18
- 239000000463 material Substances 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 229910017083 AlN Inorganic materials 0.000 claims description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 2
- 229910002601 GaN Inorganic materials 0.000 claims description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 2
- 229960001296 zinc oxide Drugs 0.000 claims description 2
- 239000011787 zinc oxide Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 12
- 229910052751 metal Inorganic materials 0.000 abstract description 8
- 239000002184 metal Substances 0.000 abstract description 8
- 230000005684 electric field Effects 0.000 abstract description 4
- 238000009826 distribution Methods 0.000 abstract description 3
- 238000001657 homoepitaxy Methods 0.000 abstract description 3
- 239000013078 crystal Substances 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000003026 anti-oxygenic effect Effects 0.000 description 1
- 230000003471 anti-radiation Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
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Abstract
The present invention discloses a carborundum secondary epitaxy material structure used for carborundum preparation comprising of: a carborundum single crystal substrate, a first homoepitaxy layer on surface of substrate, a secondary epitaxy material on surface of first homoepitaxy which comprises of p-type carborundum buffer layer, n-type carborundum active layer and unintentional doped intrinsic carborundum layer. Corresponding to MESFET (metal mosfet) with common structure, the MESFET fabricated by secondary epitaxy type has merits of small source-drain resistance, large ohm interface and uniform electric field distribution of working field in MESFET, can enhance transconductance, improve working voltage and power of appliance, and at the same time, the technique of preparation is simplified and the stability of appliance is ensured.
Description
Technical field
The present invention relates to a kind of secondary extension structure of silicon carbide, but the secondary extension structure of silicon carbide of especially a kind of shortened process, raising silicon carbide device performance.
Background technology
Carbofrax material is represented one of material as third generation semiconductor, with be the first generation semiconductor element cellulosic material of representative with silicon and be that the second generation compound semiconductor materials of representative is compared with the GaAs that carborundum has characteristics such as broad-band gap, high critical breakdown electric field, high carrier saturation drift velocity, high heat conductance.Particularly, be example with 4H-SiC, under 300K (27 ℃), the energy gap of carborundum is 3.2eV, is wider than the 1.12eV of silicon and the 1.43eV of GaAs far away.Like this, the working temperature of carborundum microelectronic component can reach 400 ℃ even more than 600 ℃, and only 170 ℃ and 150 ℃ respectively of the working temperatures of silicon device and GaAs device; Simultaneously because energy gap is big, carborundum is widely used at environment such as high nuclear hardening engineering of anti-radiation requirement and nuclear reactors.The critical avalanche breakdown field intensity of carborundum is 2200kV/cm, and silicon and GaAs are respectively 300 and 400kV/cm, the thermal conductivity of carborundum is up to 4.9JKcm, even be better than metallic copper, and the thermal conductivity of silicon is 1.5JKcm, GaAs only be 0.46JKcm, this makes the power density of silicon carbide device considerably beyond other materials.The saturated carrier drift speed of carborundum is the twice of silicon, for short channel device, this means higher operating frequency.Therefore, at aspects such as high temperature, high frequency, high-power and radioresistances, silicon carbide-based device has huge application potential.At present, electronic devices and components and electronic circuit, especially military microwave communication electronic device, normal requirement of being on active service under high frequency, high temperature, high pressure, high-power condition makes that the trend of silicon carbide-based device replacement silicon and GaAs device is more and more obvious.
But following problem appears in the silicon carbide device preparation process easily:
1, the carborundum intermediate ion injects depth as shallow, and the activity ratio that injects ion is very low, and injection efficiency is low, and this makes that common important process is difficult to use in this semiconductor fabrication.
2, device manufacturing process does not have practical wet corrosion technique, is merely able to adopt dry etch process.
Like this, the preparation of the ohmic contact that the preparation of Schottky contacts in the nonplanar structure device and pn knot, device are connected with the outside is all very difficult, causes following problem simultaneously:
1, dry etching can cause damage, causes descending for the vital carrier mobility of device performance, and the crystal structure quality descends, and material behavior is degenerated, and finally influences device performance.
2, increase technological process length, caused the final finished rate to descend.
3, equipment cost and technology cost have been increased.
In making SiC MESFET (silicon-carbide metal field effect transistor) process; in order to obtain lower contact resistance; usually at active area top growth block layer; it is the highly doped n type carborundum films of one deck; this usually can cause the reduction of puncture voltage between the leakage of source, also will adopt other dielectric material passivation in the subsequent handling simultaneously.If adopt the intrinsic silicon carbide layer of involuntary doping to replace highly doped block layer, the intrinsic silicon carbide layer plays a part passivation layer simultaneously, will keep more stable high source drain breakdown voltage, can reduce the complexity of subsequent technique.Owing to reduced the influence of thermal stress, carbofrax material has very high thermal conductivity and good antioxygenic property simultaneously, the whole thermal stability of the device of silicon carbide structure that adopts will greatly be improved, but, if adopt the intrinsic silicon carbide layer of involuntary doping, the source of the MESFET of conventional structure (metal field effect transistor) device is leaked and is difficult to draw.
Summary of the invention
The technical issues that need to address of the present invention provide a kind of carbofrax material structure that reduces the silicon carbide device preparation flow, improves the silicon carbide device performance.
For addressing the above problem, the technical solution used in the present invention is: the carborundum secondary epitaxy material structure that is used for the silicon carbide device preparation, comprise: a single-crystal silicon carbide body substrate, one is positioned at a homogeneity epitaxial layer of substrate surface, one is positioned at the secondary epitaxy layer of a homoepitaxy laminar surface, wherein homogeneity epitaxial layer comprises the intrinsic silicon carbide layer of p type silicon carbide buffer layer, n type carborundum active layer and involuntary doping, the secondary epitaxy layer generates after an epitaxial loayer is finished dealing with, and is the secondary epitaxy that carries out once more on the basis of an epitaxial loayer.
The used single-crystal silicon carbide body of described substrate material can be the wherein a kind of of 4H-SiC monocrystal, 6H-SiC monocrystal or 3C-SiC monocrystal.
Described secondary epitaxy layer can be the wherein a kind of of homogeneity epitaxial layer or epitaxially deposited layer, and its film can be the wherein a kind of of carborundum films, aluminium nitride film, zinc-oxide film or gallium nitride film.
An above-mentioned homogeneity epitaxial layer can be an original epitaxial film that does not pass through any processing, also can be an epitaxial film that has figure on the surface through handling.
Improvement of the present invention is: between described initial substrates and an epitaxial loayer other epitaxial loayers or resilient coating can also be arranged, homogeneity epitaxial layer can be simple only through epitaxially grown silicon carbide epitaxial layers once, also can be through the silicon carbide epitaxial layers of secondary epitaxy growth.
Adopt the beneficial effect that technique scheme produced to be: by homogeneity epitaxial layer of growth on single-crystal silicon carbide body substrate, an epitaxial film to grown resilient coating, carborundum active layer and intrinsic silicon carbide layer carries out etching, the intrinsic silicon carbide epitaxial layers of part is leaked in the removal source, obtain recessed source and leak the ohmic contact figure, carry out secondary epitaxy at device surface again, ohmic contact layer is leaked in the source of growth high-dopant concentration, etches away source and drain areas high-dopant concentration carborundum secondary epitaxy layer in addition at last.For the MESFET that adopts general structure, the MESFET that adopts the secondary epitaxy mode to prepare has advantages such as the source ohmic leakage is little, the ohmic contact area big, the interior working region of pipe Electric Field Distribution is even, can improve mutual conductance, improve the operating voltage and the power of device.Simultaneously, simplify the technology of device preparation greatly, guaranteed the stability of device.
Description of drawings
Fig. 1 is epitaxy junction composition of the present invention;
Fig. 2 is the epitaxy junction composition of Fig. 1 of the present invention through the figure preparation;
Fig. 3 is secondary extension structure figure of the present invention;
Fig. 4 is the secondary extension structure figure after Fig. 3 photoetching of the present invention;
Fig. 5 is the secondary extension structure figure behind Fig. 4 plated metal of the present invention;
Fig. 6 is that Fig. 5 of the present invention removes top layer metal and photoresist secondary extension structure figure afterwards;
Fig. 7 is that the ohmic contact structure chart is leaked in the source after Fig. 6 etching surface secondary epitaxy layer of the present invention.
Wherein: 1, substrate, 2, resilient coating, 3, active layer, 4, the intrinsic silicon carbide layer, 5, homogeneity epitaxial layers, 6, the secondary epitaxy layer, 7, photoresist layer, 8, depositing metal layers.
Embodiment
Below in conjunction with accompanying drawing the present invention is done and to describe in further detail.
As Figure 1-3, the carborundum secondary epitaxy material structure that is used for the silicon carbide device preparation, comprise: single-crystal silicon carbide body substrate 1, a homogeneity epitaxial layer 5 that generates on single-crystal silicon carbide body substrate 1 surface, secondary epitaxy layer 6 homogeneity epitaxial layer 5 surface generations, through the figures preparation and generation after finishing dealing with, wherein homogeneity epitaxial layer 5 comprises the intrinsic silicon carbide layer 4 of p type silicon carbide buffer layer 2, n type carborundum active layer 3 and involuntary doping to secondary epitaxy layer 6 at homogeneity epitaxial layer 5.
The present invention is applicable to the preparation of carborundum MESFET device source leakage part ohmic contact.The present invention is in specific implementation process, and the material structure before the secondary epitaxy is the structure sheet through an extension.Substrate 1 before its original extension is n type 4H-SiC, through after extension, generate one time the epitaxial structure sheet, its epitaxial loayer is made up of following components: the intrinsic silicon carbide layer 4 of involuntary doping, n type carborundum active layer 3 and p type silicon carbide buffer layer 2, as shown in Figure 1.
On an epitaxial wafer shown in Figure 1, generate the secondary epitaxy carborundum films and carry out the main process of MESFET source drain contact preparation as follows:
(1) figure preparation
An epitaxial wafer obtains having at source and drain areas the surface of pit pattern, as Fig. 2 through after photoetching, the plasma etch process.
(2) secondary epitaxy
To have the source leakage graphic epitaxial wafer adopt the mixed solution of sulfuric acid and hydrogen peroxide to boil after the cleaning, adopt the n type silicon carbide epitaxial layers of horizontal hot wall chemical vapor deposition system (HWCVD) (Fig. 2 surface) last secondary epitaxy high-dopant concentration on surface with source leakage graphic, obtain through the secondary epitaxy chip architecture, as shown in Figure 3.
(3) subsequent device preparation technology
The secondary epitaxy sheet is taken out among the HWCVD growth room, and the protection source and drain areas exposes all the other zones, the secondary epitaxy chip architecture of carry out photoetching, developing and obtaining afterwards, as shown in Figure 4; On this basis, adopt electron beam evaporation platform hydatogenesis Ni to leak metal, obtain structure as shown in Figure 5 as the source.Leak part metal and photoresist in addition through peeling off the removal source, adopt quick anneal oven to carry out high temperature alloy at 950 ℃, the preparation ohmic contact obtains structure as shown in Figure 6; Adopt the ICP+RIE mode again, keep the source and drain areas of secondary epitaxy, etch away unnecessary secondary epitaxy layer, obtain structure as shown in Figure 7, the top layer still is the high resistant intrinsic silicon carbide layer of involuntary doping.
The high resistant intrinsic silicon carbide layer on surface can keep high source drain breakdown voltage, guarantees that device has bigger power and higher efficient, and the ohmic contact that the secondary epitaxy layer is made within the groove can guarantee that again device has low contact resistance simultaneously.
For the MESFET that adopts general structure, the MESFET that adopts the secondary epitaxy mode to prepare has advantages such as the source ohmic leakage is little, the ohmic contact area big, the interior working region of pipe Electric Field Distribution is even, can improve mutual conductance, improve the operating voltage and the power of device.Simultaneously, simplify the technology of device preparation greatly, guaranteed the stability of device.
The present invention describes in detail with certain embodiments, for the technical staff of this professional domain, also can carry out various changes to its form and details, but all not depart from the scope of the present invention.
Claims (7)
1, secondary extension structure of silicon carbide, be applicable to the silicon carbide device preparation, it is characterized in that: comprise a single-crystal silicon carbide body substrate (1), one is positioned at a homogeneity epitaxial layer (5) of substrate surface, one is positioned at the secondary epitaxy layer (6) of the growth after a homogeneity epitaxial layer (5) is finished dealing with on a homogeneity epitaxial layer (5) surface, wherein a homogeneity epitaxial layer (5) can be single epitaxial loayer or the multilayer epitaxial layer with heterogeneity, and secondary epitaxy layer (6) is that a homogeneity epitaxial layer (5) is handled the back growth.
2, secondary extension structure of silicon carbide according to claim 1 is characterized in that the used single-crystal silicon carbide body of described substrate material can be the wherein a kind of of 4H-SiC monocrystal, 6H-SiC monocrystal or 3C-SiC monocrystal.
3, secondary extension structure of silicon carbide according to claim 1 is characterized in that described secondary epitaxy layer (6) can be the wherein a kind of of homogeneity epitaxial layer or epitaxially deposited layer.
4,, it is characterized in that described secondary epitaxy layer can be the wherein a kind of of carborundum films, aluminium nitride film, zinc-oxide film or gallium nitride film according to claim 1 or the described secondary extension structure of silicon carbide of 3 arbitrary claims.
5, secondary extension structure of silicon carbide according to claim 1, it is characterized in that a described homogeneity epitaxial layer (5) can be an original epitaxial film that does not pass through any processing, also can be an epitaxial film that has figure on the surface through handling.
6, secondary extension structure of silicon carbide according to claim 1 or 5, it is characterized in that a described homogeneity epitaxial layer (5) can be simple only through epitaxially grown silicon carbide epitaxial layers once, also can be through the silicon carbide epitaxial layers of secondary epitaxy growth.
7, secondary extension structure of silicon carbide according to claim 1 is characterized in that between a described initial substrates (1) and the homogeneity epitaxial layer (5) other epitaxial loayers or resilient coating being arranged.
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| CN2008100546513A CN101246899B (en) | 2008-03-20 | 2008-03-20 | Secondary extension structure of silicon carbide |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102074610A (en) * | 2010-09-09 | 2011-05-25 | 西安电子科技大学 | Beta-radiation detector based on field effect tube structure of silicon carbide metal semiconductor |
| CN102465342A (en) * | 2010-11-15 | 2012-05-23 | 住友电气工业株式会社 | Method of manufacturing gan-based film |
| CN103107259A (en) * | 2013-02-22 | 2013-05-15 | 厦门市三安光电科技有限公司 | Manufacturing method of light-emitting diode chip |
| US8697550B2 (en) | 2010-11-15 | 2014-04-15 | Sumitomo Electric Industries, Ltd. | Method of manufacturing GaN-based film |
| US8697564B2 (en) | 2010-11-16 | 2014-04-15 | Sumitomo Electric Industries, Ltd. | Method of manufacturing GaN-based film |
| CN104867818A (en) * | 2015-04-02 | 2015-08-26 | 中国电子科技集团公司第十三研究所 | Method for reducing defects of silicon carbide epitaxial material |
| US9184228B2 (en) | 2011-03-07 | 2015-11-10 | Sumitomo Electric Industries, Ltd. | Composite base including sintered base and base surface flattening layer, and composite substrate including that composite base and semiconductor crystalline layer |
| CN105051868A (en) * | 2012-10-30 | 2015-11-11 | 松下电器产业株式会社 | Semiconductor device |
| CN105354352A (en) * | 2015-09-25 | 2016-02-24 | 国网智能电网研究院 | 4H-SiC three-dimensional atomic structure model with deflection angle of 8 degrees, construction method therefor and application thereof |
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2008
- 2008-03-20 CN CN2008100546513A patent/CN101246899B/en not_active Expired - Fee Related
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102074610B (en) * | 2010-09-09 | 2012-08-08 | 西安电子科技大学 | Beta-radiation detector based on field effect tube structure of silicon carbide metal semiconductor |
| CN102074610A (en) * | 2010-09-09 | 2011-05-25 | 西安电子科技大学 | Beta-radiation detector based on field effect tube structure of silicon carbide metal semiconductor |
| CN102465342A (en) * | 2010-11-15 | 2012-05-23 | 住友电气工业株式会社 | Method of manufacturing gan-based film |
| US8697550B2 (en) | 2010-11-15 | 2014-04-15 | Sumitomo Electric Industries, Ltd. | Method of manufacturing GaN-based film |
| CN102465342B (en) * | 2010-11-15 | 2014-07-23 | 住友电气工业株式会社 | Method of manufacturing gan-based film |
| US8697564B2 (en) | 2010-11-16 | 2014-04-15 | Sumitomo Electric Industries, Ltd. | Method of manufacturing GaN-based film |
| US9184228B2 (en) | 2011-03-07 | 2015-11-10 | Sumitomo Electric Industries, Ltd. | Composite base including sintered base and base surface flattening layer, and composite substrate including that composite base and semiconductor crystalline layer |
| US9362370B2 (en) | 2012-10-30 | 2016-06-07 | Panasonic Intellectual Property Management Co., Ltd. | Silicon carbide semiconductor device having nitrogen-containing silicon alloy for ohmic contact to P-type impurity region |
| CN105051868A (en) * | 2012-10-30 | 2015-11-11 | 松下电器产业株式会社 | Semiconductor device |
| CN105051868B (en) * | 2012-10-30 | 2016-06-08 | 松下知识产权经营株式会社 | Semiconductor device |
| CN103107259B (en) * | 2013-02-22 | 2015-10-14 | 厦门市三安光电科技有限公司 | Method for manufacturing light-emitting diode chip |
| CN103107259A (en) * | 2013-02-22 | 2013-05-15 | 厦门市三安光电科技有限公司 | Manufacturing method of light-emitting diode chip |
| CN104867818A (en) * | 2015-04-02 | 2015-08-26 | 中国电子科技集团公司第十三研究所 | Method for reducing defects of silicon carbide epitaxial material |
| CN104867818B (en) * | 2015-04-02 | 2017-08-25 | 中国电子科技集团公司第十三研究所 | A kind of method for reducing silicon carbide epitaxy material defect |
| CN105354352A (en) * | 2015-09-25 | 2016-02-24 | 国网智能电网研究院 | 4H-SiC three-dimensional atomic structure model with deflection angle of 8 degrees, construction method therefor and application thereof |
| CN105354352B (en) * | 2015-09-25 | 2019-06-21 | 国网智能电网研究院 | A kind of 8 ° of drift angle three dimensional atomic structure models of 4H-SiC material and its construction method and application |
| CN110492761A (en) * | 2019-07-12 | 2019-11-22 | 西安科锐盛创新科技有限公司 | A kind of rectification circuit system, RECTIFYING ANTENNA and microwave wireless energy transmission system |
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| CN101246899B (en) | 2012-02-08 |
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