CN107835004A - Flash exports three crystal module circuits - Google Patents
Flash exports three crystal module circuits Download PDFInfo
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- CN107835004A CN107835004A CN201711299628.6A CN201711299628A CN107835004A CN 107835004 A CN107835004 A CN 107835004A CN 201711299628 A CN201711299628 A CN 201711299628A CN 107835004 A CN107835004 A CN 107835004A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
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Abstract
A kind of flash exports three crystal module circuits, including：The first transistor Q1 emitter stages connect positive source, colelctor electrode is grounded by resistance R1, colelctor electrode is also connected with third transistor Q3 grid and the input of energy storage delay unit 5, transistor Q3 source electrodes connect positive source, transistor Q3 drain electrode connections Q2 colelctor electrode, the output end of transistor Q2 base stages connection energy storage delay unit 5, energy storage delay unit 5 is also connected with positive source, for transistor Q2 emitter stages by voltage-stabiliser tube D4 connection Q1 base stages, transistor Q3 drain electrodes are that modular circuit output end is used to be load supplying；The drain potential of power tube Q3 normallies raises the stable state that Q2 collector potentials make Q1 cut-offs maintain power tube conducting; when power tube excessively stream; excessive saturation voltage drop makes Q1 turn on the power supply of rupturing duty pipe Q3 grids and keep it turned off to be protected circuit and enter temporary stable state by Q2; electric capacity C5 discharges during this; when electric discharge terminates, circuit upset is the stable state.
Description
Technical field
The invention belongs to power device technical field of electronic control, more particularly to flash to export three crystal module circuits.
Background technology
In order to easy to control, many loads are powered control by the way of positive pole is controlled, and its control circuit is using high
Side exports.These power control circuits need to carry out overcurrent protection, are on the one hand the overcurrent protections to load, are on the other hand pair
Power control device (including FET, double pole triode and Darlington transistor constant power crystal) overcurrent protection of itself,
But the electronic control module of existing much flash outputs does not possess overcurrent protection function, when the reason such as load overload or line short
When causing inside modules power tube excessively stream, power tube easily damages.In the Electronic Control mould that other possess power defencive function
In block, its overcurrent protection often in load major loop series connection high current sample resistance, can so carry out overcurrent protection, but greatly
Current sampling resistor volume is larger, it is larger to take board area, and the discrete type of bulk article is difficult to control, and is more had
Circuit is excessively complicated, protection act hysteresis, and this all makes cost increase, fault rate increase, has overcurrent protection for special
For power integrated circuit, on the one hand its design and manufacturing cycle long cost are high, on the other hand its pressure voltage is relatively low is easy to be hit
Wear, for the higher power chip of pressure voltage, its cost is higher, so power control module damage, particularly its work(often occurs
The breakdown of rate pipe, general power control module cost is higher, if module damage, delays the equipment progress of work and brings economic damage
Lose.
The content of the invention
The present invention is the saturation voltage drop of direct sampled power controlling transistor, when the saturation voltage drop overflows, passes through circuit
Positive feedback pattern make " power D-flip flop " that prime small signal amplification circuit and power tube and feedback component form by turning on
State is drastically overturn as cut-off state, rapidly protects power tube in time, and be classified device composition power model its into
This is relatively low, pressure voltage is higher, makes power control module more safety durable reliable.
The technical solution adopted in the present invention is：
According to the first aspect of the present invention, there is provided a kind of flash exports three crystal module circuits, and it is characterized in that
Including：The first transistor, second transistor, third transistor, energy storage delay unit, threshold adjustment unit and resistance R1, wherein,
The emitter stage of the first transistor connects positive source, and the first crystal pipe collector is connected by resistance R1
Ground, the colelctor electrode of the first transistor are also connected with the input of third transistor (grid or base stage) and energy storage delay unit
Input, the positive terminal (source electrode or emitter stage) of the third transistor connect positive source, the output end of the third transistor
The colelctor electrode of (drain electrode or colelctor electrode) the connection second transistor, the base stage of the second transistor connect the energy storage delay
The output end of unit, the positive pole termination positive source of the energy storage delay unit, the emitter stage of the second transistor pass through institute
State the base stage that threshold adjustment unit connects the first transistor, third transistor output end (the drain electrode or colelctor electrode) conduct
The flash exports the output end of three crystal module circuits, for controlling the hot junction of external loading；
When the third transistor normally, the energy storage delay unit energy storage, the second transistor colelctor electrode
The emitter current that voltage was elevated, made the second transistor is 0 and then ends the first transistor；When the described 3rd
When transistor excessively stream causes the third transistor saturation voltage drop to exceed the threshold adjustment unit on state threshold voltage, described
The emitter current of two-transistor drives the first transistor conducting to end the third transistor and protected, when the energy storage
End the second transistor at the end of the energy storage release of delay unit and then make the first transistor cut-off simultaneously described
The energy storage of energy storage delay unit, the first transistor cut-off also promote the third transistor to turn on, and pass through the positive feedback of circuit
Effect makes the third transistor attempt to quickly enter saturation conduction state：The third transistor enters just if excessively stream releases
Normal saturation conduction state, the hair that the too high saturation voltage drop of the third transistor passes through the second transistor if excessively stream is continued
Emitter current driving the first transistor conducting makes the third transistor cut-off continue to be protected.
Further, additionally provide a kind of flash and export three crystal module circuits, it, which is characterized in that, also includes：
Diode D6 and resistance R6, the diode D6 negative pole connect the second transistor colelctor electrode and described simultaneously
Resistance R6 one end, the positive pole of the diode D6 connect the third transistor output end (drain electrode or colelctor electrode), the electricity
The other end for hindering R6 connects the third transistor output end or ground connection.
According to the second aspect of the present invention, there is provided a kind of flash exports three crystal module circuits, and it is characterized in that
Including：The first transistor, second transistor, third transistor, energy storage delay unit, threshold adjustment unit, resistance R1 and two poles
Pipe D6, wherein,
The emitter stage of the first transistor connects positive source, and the first crystal pipe collector is grounded by resistance R1,
The colelctor electrode of the first transistor is also connected with the input (grid or base stage) of third transistor and energy storage delay unit is defeated
Enter end, the positive terminal (source electrode or emitter stage) of the third transistor connects positive source, the output end (leakage of the third transistor
Pole or colelctor electrode) connected by the emitter stage of the diode D6 connections second transistor, the base stage of the second transistor
Connect the output end of the energy storage delay unit, the grounded collector of the second transistor or the connection third transistor it is defeated
Go out end, the positive pole termination positive source of the energy storage delay unit, the emitter stage of the second transistor is adjusted by the threshold value
Whole unit connects the base stage of the first transistor, and the third transistor output end (drain electrode or colelctor electrode) is used as the flash
The output end of three crystal module circuits is exported, for controlling the hot junction of external loading；
When the third transistor normally, the energy storage delay unit energy storage, the transmitting of the second transistor
Pole tension, which is elevated, ends the threshold adjustment unit and the first transistor；When the third transistor excessively stream causes institute
When stating third transistor saturation voltage drop and exceeding the threshold adjustment unit on state threshold voltage, the emitter stage of the second transistor
Electric current drives the first transistor conducting to end the third transistor and protected, when the energy storage of the energy storage delay unit is released
End the second transistor at the end of putting and then make the first transistor cut-off energy storage delay unit storage simultaneously
Energy, the first transistor cut-off also promote the third transistor to turn on, and make the described 3rd by the positive feedback effect of circuit
Transistor attempts to quickly enter saturation conduction state：The third transistor enters normal saturation conduction shape if excessively stream releases
State, the too high saturation voltage drop of the third transistor is driven by the emitter current of the second transistor if excessively stream is continued
The first transistor conducting makes the third transistor cut-off continue to be protected.
Further, additionally provide a kind of flash and export three crystal module circuits, it is characterized in that：Described second
Current-limiting resistance is serially connected with the collector loop or emitter circuit of transistor.
According to the third aspect of the present invention, there is provided a kind of flash exports three crystal module circuits, and it is characterized in that
Including：The first transistor, second transistor, third transistor, energy storage delay unit, threshold adjustment unit, resistance R1 and two poles
Pipe D6, wherein,
The emitter stage of the first transistor connects positive source, and the first crystal pipe collector is grounded by resistance R1,
The colelctor electrode of the first transistor is also connected with the input (grid or base stage) of third transistor and energy storage delay unit is defeated
Enter end, the positive terminal (source electrode or emitter stage) of the third transistor connects positive source, the output end (leakage of the third transistor
Pole or colelctor electrode) also connected by the base stage of the diode D6 connections second transistor, the base stage of the second transistor
Connect the output end of the energy storage delay unit, the grounded collector of the second transistor or the connection third transistor it is defeated
Go out end, the positive pole termination positive source of the energy storage delay unit, the emitter stage of the second transistor is adjusted by the threshold value
Whole unit connects the base stage of the first transistor, and the third transistor output end (drain electrode or colelctor electrode) is used as the flash
The output end of three crystal module circuits is exported, for controlling the hot junction of external loading；
When the third transistor normally, the energy storage delay unit energy storage, the base stage of the second transistor
Voltage, which is elevated, is turned off the second transistor, the threshold adjustment unit and the first transistor；When the described 3rd
When transistor excessively stream causes the third transistor saturation voltage drop to exceed the threshold adjustment unit on state threshold voltage, from storage
The output end voltage of energy delay unit makes the second transistor produce base current, the emitter current of the second transistor
Drive the first transistor conducting to end the third transistor to be protected, when the energy storage of the energy storage delay unit discharges knot
End the second transistor during beam and then make the first transistor cut-off energy storage delay unit energy storage, institute simultaneously
Stating the first transistor cut-off also promotes the third transistor to turn on, and makes the third transistor by the positive feedback effect of circuit
Attempt to quickly enter saturation conduction state：If the third transistor enters normal saturation conduction state, held if excessively stream releases
Then the too high saturation voltage drop of the third transistor is brilliant by the emitter current driving first of the second transistor for continuous excessively stream
The conducting of body pipe makes the third transistor cut-off continue to be protected.
Further, additionally provide a kind of flash and export three crystal module circuits, it is characterized in that：Described second
Current-limiting resistance is serially connected with the collector loop or emitter circuit of transistor.
Further, additionally provide a kind of flash and export three crystal module circuits, it is characterized in that：In the threshold value
On adjustment unit or the base loop of the first transistor or on be serially connected with current-limiting resistance.
The beneficial effects of the invention are as follows：Due to high current sampling resistor that need not be required as the sampling of prior art excessively stream, and
The saturation voltage drop of direct sampled power controlling transistor, by the positive feedback pattern of circuit make prime small signal amplification circuit and
" the power D-flip flop " of power tube and feedback element composition is drastically overturn by conducting state as cut-off state, so to power tube
Protection it is extremely rapid, and circuit structure design is ingenious, succinct, component is less, cost is low, is easy to scale volume production, makes
Power model is relatively reliable, is one of core control technology in power electronic control module field of independent research, economic benefit
It is obvious with social benefit.
Brief description of the drawings
Fig. 1 is that the first flash that embodiment of the present invention first aspect provides exports three crystal module circuits,
Fig. 2 is that another flash that embodiment of the present invention first aspect provides exports three crystal module circuits,
Fig. 3 is that another flash that embodiment of the present invention first aspect provides exports three crystal module circuits,
Fig. 4 is that second of flash that embodiment of the present invention second aspect provides exports three crystal module circuits,
Fig. 5 is that another flash that embodiment of the present invention second aspect provides exports three crystal module circuits,
Fig. 6 is that the third flash that the embodiment of the present invention third aspect provides exports three crystal module circuits,
Fig. 7 is that another flash that the embodiment of the present invention third aspect provides exports three crystal module circuits.
Embodiment
The present invention is without the high current sample resistance as needed for the sampling of prior art excessively stream, but directly sampled power control
The saturation voltage drop of transistor, prime small signal amplification circuit and power tube and feedback element group are made by the positive feedback pattern of circuit
Into " power D-flip flop " drastically overturn by conducting state as cut-off state, so the protection to power tube is extremely rapid, under
Face carries out more detailed elaboration to the present invention in conjunction with specific embodiments.
In a first aspect, embodiment of the present invention, which provides a kind of flash, exports three crystal module circuits.
Embodiment 1
A kind of flash exports three crystal module circuits, as shown in figure 1, its circuit structure feature includes：The first transistor 1
(Q1), second transistor 2 (Q2), third transistor 3 (Q3), threshold adjustment unit 4, energy storage delay unit 5 and resistance R1, its
In：
The first transistor Q1 emitter stage meets positive source B+, first crystal pipe collector be grounded by resistance R1 (i.e. E,
It is as follows), the colelctor electrode of the first transistor be also connected with third transistor Q3 input (grid) and energy storage delay unit 5 it is defeated
Enter end, third transistor Q3 positive terminal (source electrode) connects positive source, third transistor Q3 output end (drain electrode) connection second
Transistor Q2 colelctor electrode, the output end of second transistor Q2 base stage connection energy storage delay unit 5, energy storage delay unit 5
Positive pole terminates positive source, and second transistor Q2 emitter stage is brilliant by threshold adjustment unit 4 (i.e. voltage-stabiliser tube D4) connection first
Body pipe Q1 base stage, third transistor Q3 output ends (drain electrode) export the output end of three crystal module circuits as flash, are used for
Control the hot junction of external loading, when third transistor Q3 uses double pole triode or Darlington transistor, its corresponding input
Be emitter stage for base stage, earth terminal, output end be colelctor electrode (as follows)；Energy storage delay unit 5 therein have diode D5,
Resistance R5 and electric capacity C5, diode D5 positive pole connect resistance R5 one end and electric capacity C5 one end simultaneously, and diode D5's is negative
Input of the pole as energy storage delay unit, the electric capacity C5 other end terminate positive source as the positive pole of energy storage delay unit,
Output end of the resistance R5 other end as energy storage delay unit.
When third transistor Q3 normallies, transistor Q1 is cut-off state, electric capacity C5 charging energy-storings, charge path：
Positive source B+ → electric capacity C5 → diode D5 → resistance R1 → ground, because power tube Q3 is turned on, its saturation voltage drop very little that drains
(typically in 0.1V~1.0V scopes), and second transistor Q2 colelctor electrode is raised by it, second transistor Q2 collector junction positively biaseds
The emitter current for making second transistor is 0, therefore the first transistor ends, and such third transistor Q3 saturation conductions are stable
State.
When due to load overload or the reason such as short circuit cause third transistor Q3 excessively streams when, excessive operating current will be
With its larger pressure drop in its internal resistance, over the ground for its drain potential can be than being reduced during normally, second transistor Q2 hair
Emitter-base bandgap grading meeting output voltage U2e, as power tube Q3 drain voltages reduce, triode Q2 collector voltages also reduce, triode Q2
Emitter voltage Ue2 is also decreased, for positive source B+：Voltage difference between triode Q2 emitter stages and B+ increases
Greatly, when difference increases to the on state threshold voltage more than threshold adjustment unit voltage-stabiliser tube D4, triode Q2 emitter current
Drive the first transistor Q1 conductings to end third transistor Q3 to be protected, positive feedback process in this course be present：Q1
Base potential ↓ → Q1 collector potentials ↑ → Q3 grid potentials ↑ → Q3 drain potentials ↓ → Q2 collector potentials ↓ → Q2 emitter stages electricity
Position ↓ → D4 → Q1 base potentials ↓, this strong positive feedback process makes circuit drastically overturn for power tube Q3 cut-off states, but should
Cut-off state is temporary stable state, because at the end of the storage capacitor C5 electric energy release of energy storage delay unit 5, second transistor Q2 meetings
End and then end the first transistor Q1, while the energy storage of energy storage delay unit 5, the first transistor Q1 cut-offs also promote the 3rd
Transistor Q3 is turned on, and by the positive feedback effect of circuit, its positive feedback process is：Cause Q2 because C5 discharge currents are gradually reduced
Base potential ↑ → Q2 transmittings electrode potential ↑ → D4 → Q1 base potentials ↑ → Q1 collector potentials ↓ → Q3 grid potentials ↓ → Q3 drain electrodes
Current potential ↑ → Q2 collector potentials ↑ → Q2 transmittings electrode potential ↑, make third transistor Q3 attempt to quickly enter saturation conduction state：If
Excessively stream releases third transistor Q3 and enters normal saturation conduction state, saturation pressure excessive third transistor Q3 if excessively stream is continued
Drop Uds drives the first transistor Q1 conductings to continue third transistor Q3 cut-offs by second transistor Q2 emitter current
To protection.
On the basis of above-described embodiment 1, additionally provide a kind of flash and export three crystal module circuits, as shown in Fig. 2 should
Circuit enters diode D6 and resistance R6 in the second transistor Q2 of circuit shown in above-mentioned Fig. 1 collector loop, diode D6's
Negative pole connects second transistor Q2 colelctor electrodes and resistance R6 one end simultaneously, and diode D6 positive pole connection third transistor Q3 is defeated
Go out end (drain electrode), resistance R6 other end connection third transistor Q3 output end F.Its course of work and electricity shown in above-mentioned Fig. 1
Road is basically identical, only raises triode Q2 collector potentials by diode D6 in power tube Q3 normallies, and now three
Pole pipe Q2 collector potentials are high level by diode D6 clampers, therefore triode Q2 transmitting electrode potentials are insufficient to allow voltage-stabiliser tube D4 to lead
Logical, this is the stable state of power tube conducting, and when power tube Q3 drain potentials reduce, triode Q2 colelctor electrode is made by resistance R6
Current potential is reduced, and triode Q2 transmittings electrode potential Ue2 is also decreased, when voltage difference is increased to more than voltage-stabiliser tube between Ue2 and B+
During D4 conduction thresholds, triode Q1 conductings, end power tube Q2, circuit enters temporary stable state.
Equally on the basis of above-described embodiment 1, additionally provide a kind of flash and export three crystal module circuits, such as Fig. 3 institutes
Show, collector loop of the circuit in the second transistor Q2 of circuit shown in above-mentioned Fig. 1 seals in diode D6, also add resistance
R6, diode D6 negative pole connect second transistor Q2 colelctor electrodes and resistance R6 one end, diode D6 positive pole connection simultaneously
Third transistor Q3 output ends (drain electrode), resistance R6 other end ground connection.Its course of work is also basic with circuit shown in above-mentioned Fig. 1
Unanimously, triode Q2 collector potentials are only raised by diode D6 in power tube Q3 normallies, now triode Q2
Collector potential is high level by diode D6 clampers, therefore triode Q2 transmitting electrode potentials are insufficient to allow voltage-stabiliser tube D4 to turn on, this
For the stable state of power tube conducting, when power tube Q3 drain potentials reduce, by diode D6 clamper, three poles are made by resistance R6
Pipe Q2 collector potentials are reduced, and triode Q2 emitter stages output current potential Ue2 is also decreased, when voltage difference increases between Ue2 and B+
Big to when exceeding voltage-stabiliser tube D4 conduction thresholds, triode Q1 is turned on, and ends power tube Q2, circuit enters temporary stable state.
Second aspect, embodiment of the present invention additionally provide a kind of flash and export three crystal module circuits.
Embodiment 2
A kind of flash exports three crystal module circuits, and as shown in Figure 4 and Figure 5, its design feature includes：The first transistor 1
(Q1), second transistor 2 (Q2), third transistor (Q3), energy storage delay unit 5, threshold adjustment unit 4, resistance R1 and two poles
Pipe D6, wherein：
The first transistor Q1 emitter stage meets positive source B+, and the first transistor Q1 colelctor electrodes are grounded by resistance R1, the
One transistor Q1 colelctor electrode is also connected with third transistor Q3 input (grid) and the input of energy storage delay unit 5, the
Three transistor Q3 positive terminal (source electrode) connects positive source, and third transistor Q3 output end (drain electrode) is connected by diode D6
Second transistor Q2 emitter stage, the output end of second transistor Q2 base stage connection energy storage delay unit 5, second transistor Q2
Grounded collector (see Fig. 4) or connection third transistor Q3 output end F (see Fig. 5), the positive pole termination of energy storage delay unit 5
Positive source, second transistor Q2 emitter stage connect the first transistor Q1 base stage, the 3rd crystal by threshold adjustment unit 4
Pipe Q3 output end (drain electrode) exports the output end F of three crystal module circuits as flash, for controlling the hot junction of external loading；
Energy storage delay unit 5 therein has diode D5, resistance R5 and electric capacity C5, and diode D5 positive pole connects resistance R5's simultaneously
One end and electric capacity C5 one end, the input of diode D5 negative pole as energy storage delay unit, electric capacity C5 other end conduct
The positive terminal of energy storage delay unit, the output end of the resistance R5 other end as energy storage delay unit.
When third transistor Q3 normallies, the electric capacity C5 charging energy-storings of energy storage delay unit 5, charge path is：Electricity
Source positive pole B+ → electric capacity C5 → diode D5 → resistance R1 → ground, third transistor Q3 are turned on, and its drain electrode is high potential (general field
Effect pipe saturation voltage drop is 0.1~1.0V), the emitting voltage of second transistor is raised by diode D6, is not enough to reach
Voltage-regulator diode D4 conduction threshold in threshold adjustment unit 4, makes the first transistor Q1 cut-offs, Q3 saturation conductions, and the state is
Stable state.
When due to load overload or the reason such as short circuit cause third transistor Q3 excessively streams when, excessive operating current will be
With its larger pressure drop in its internal resistance, over the ground for its drain potential can be than being reduced during normally, second transistor Q2 hair
Emitter voltage U2e reduces with power tube Q3 drain voltages, and with U2e reduction, U2e increases with B+ voltage differences, when U2e with
When B+ voltage differences are increased to more than voltage-stabiliser tube D4 conduction thresholds, second transistor Q2 is set to produce emitter current driving first crystal
Pipe Q1 is turned on, and its colelctor electrode is exported high potential, diode D5 cut-offs, electric capacity C5 electric discharges, discharge path：Electric capacity C5 top crowns →
B+ → Q1 emitter junctions → voltage-stabiliser tube D4 reverse currents → Q2 emitter junctions → resistance R5 → electric capacity C5 bottom crowns, Q1 conductings also make the 3rd
Transistor Q3, which ends, to be protected, when energy storage delay unit C5 energy storage release at the end of make second transistor Q2 end and then
Making the first transistor Q1 cut-offs, the electric capacity C5 continuation energy storage of energy storage delay unit 5, the first transistor Q1 recover cut-off, also promoted simultaneously
Third transistor Q3 is turned on, makes third transistor Q3 attempt to quickly enter saturation conduction shape by the positive feedback effect of circuit
State：Third transistor Q3 enters normal saturation conduction state if excessively stream releases, third transistor Q3 is too high if excessively stream is continued
Saturation voltage drop drive the first transistor to turn on Q1 by second transistor Q2 emitter current to end third transistor Q3
Continue to be protected.
It can be readily appreciated that current limiting electricity can also be concatenated on the collector loop or emitter circuit of second transistor
Resistance, is operating current with limit transistor.
The third aspect, embodiment of the present invention additionally provide a kind of flash and export three crystal module circuits.
Embodiment 3
A kind of flash exports three crystal module circuits, and as shown in Figure 6 and Figure 7, its design feature includes：The first transistor 1
(Q1), second transistor 2 (Q2), third transistor 3 (Q3), energy storage delay unit 5, threshold adjustment unit 4, resistance R1 and two poles
Pipe D6, wherein
The first transistor Q1 emitter stage connects positive source, and the first transistor Q1 colelctor electrodes are grounded E by resistance R1, and first
Transistor Q1 colelctor electrode is also connected with third transistor Q3 input (grid) and the input of energy storage delay unit 5, and the 3rd
Transistor Q3 positive terminal (source electrode) meets positive source B+, and third transistor Q3 output end F (drain electrode) is connected by diode D6
Second transistor Q2 base stage is connect, second transistor Q2 base stage is also connected with the output end of energy storage delay unit 5, second transistor
Q2 grounded collector (Fig. 7) or connection third transistor Q3 output end F (Fig. 6), the positive pole termination electricity of energy storage delay unit 5
Source positive pole, second transistor Q2 emitter stage connect the first transistor Q1 base stage, third transistor by threshold adjustment unit 4
Q3 output ends (drain electrode) export the output end F of three crystal module circuits as flash, for controlling the hot junction of external loading.
When third transistor Q3 normallies, the electric capacity C5 charging energy-storings of energy storage delay unit 5, charge path is：Electricity
Source positive pole B+ → electric capacity C5 → diode D5 → resistance R1 → ground, third transistor Q3 are turned on, and its drain electrode is low potential (general field
Effect pipe saturation voltage drop is 0.1~1.0V), second transistor Q2 base potential is raised by diode D6, the second crystal
Pipe Q2 emitter voltage is also elevated, and is not enough to the conduction threshold for reaching voltage-regulator diode D4 in threshold adjustment unit 4, makes
One transistor Q1 ends, and Q3 saturation conductions, the state is stable state.
When third transistor Q3 excessively streams, when third transistor saturation voltage drop exceedes the D4 conduction thresholds of threshold adjustment unit
During voltage, second transistor Q2 conductings：
In figure 6：Q2 emitter current includes base current Ib2, its source be electric capacity Q2 emitter junctions → resistance R5 →
C5 negative poles, also comprising Q2 collector current Ic2, its path source is that Q2 emitter stages → Q2 colelctor electrodes → power tube Q2 drain electrodes are too high
Saturation voltage drop Uds cause relatively low F point voltage UF, general collector current manyfold bigger than base current, reasonably select
Resistance R5, the collector current that can limit triode Q2 are unlikely to the permissible value for exceeding Q2, that is, Ic2=β Ib2, wherein β
For direct current multiplication factor；
In the figure 7：Q2 emitter current includes base current Ib2, its source be electric capacity Q2 emitter junctions → resistance R5 →
C5 negative poles, also comprising Q2 collector current Ic2, its path source is Q2 emitter stages → Q2 colelctor electrodes → ground, general colelctor electrode electricity
Stream manyfold bigger than base current, reasonably selects resistance R5, and the collector current that can limit triode Q2 is unlikely to exceed
Q2 permissible value, that is, Ic2=β Ib2, wherein β are direct current multiplication factor.
Above-mentioned second transistor Q2 emitter current driving the first transistor Q1 conductings, the high electricity of its colelctor electrode output
Position, diode D5 cut-offs, electric capacity C5 electric discharges, its discharge path：C5 top crowns → positive source B+ → Q1 emitter junctions → D4 is reverse
Electric current → Q2 emitter junctions and by R5 to C5 bottom crowns, Q1 conductings also end third transistor Q3 to be protected, when energy storage is prolonged
End second transistor Q2 at the end of Shi Danyuan C5 energy storage release and then make the first transistor Q1 cut-offs delay of energy storage simultaneously
The electric capacity C5 of unit 5 continues energy storage, the first transistor Q1 recovers cut-off, also promotes third transistor Q3 to turn on, and passes through circuit
Positive feedback effect makes third transistor Q3 attempt to quickly enter saturation conduction state：Third transistor Q3 enters if excessively stream releases
The transmitting that normal saturation conduction state, saturation voltage drop too high third transistor Q3 if excessively stream is continued pass through second transistor Q2
Electrode current driving the first transistor conducting Q1 makes third transistor Q3 cut-offs continue to be protected.
It can be readily appreciated that current limiting electricity can also be concatenated on the collector loop or emitter circuit of second transistor
Resistance, with the operating current of limit transistor.In threshold adjustment unit that can also be in the above-described embodiments or the first transistor
Base loop or on be serially connected with current-limiting resistance, with the operating current of further limit transistor.
By the more detailed elaboration of above-mentioned several embodiments, the important document structure of circuit can be extracted：With triode Q1,
Power tube Q3 is that core forms a kind of special trigger, and now the trigger is analyzed：
Triode Q1 and resistance R1 compositions are common emitter amplifying circuits, from one kind of base stage input, colelctor electrode output
Small-signal phase inverter, power tube Q3 and external load form the power amplification circuit of common source or common emitter, be from grid or
A kind of power inverter of base stage input, drain electrode or colelctor electrode output, the output end connection of small-signal phase inverter is that power is anti-
It is anti-phase to be connected to power as feedback link for the time-delay reset triggers circuit of the element such as the input of phase device, triode Q2 composition
Between the output end of device and the input of small-signal phase inverter, simple understanding is：If it is connected to an only feedback resistance
Between the output end of power inverter and the input of small-signal phase inverter, then two phase inverters and feedback resistance form bistable
The trigger of state, it is a kind of set-reset flip-flop, but one of phase inverter is power device, and it is special that this is just constituted
" power trigger device ", and the feedback link main function of the element such as foregoing triode Q2 composition is：Clamper -- excessively stream is touched for conducting
-- time-delay reset -- fast energy storage is sent out, so just realizes Power Control (in the i.e. " IN of triode Q1 base stages with relatively simple structure
Terminal " input control signal control power tube conducting and cut-off), time-delay reset, power tube saturation voltage drop voltage sampling, excessively stream protect
The power control module circuit of shield, excessively stream action quick response function.The circuit structure ball bearing made of the present invention, discrete device are resistance to
Pressure value is higher, it is integrated to be easy to thick film, its reliability is better than integrated circuit, and cost is relatively low, be widely used, prospect is preferable.
It can apply to generator voltage controller, power vehicle window controller, wiper motor controller, electric machine controller etc..
Embodiments of the invention are merely to illustrate technical scheme, are not limitations of the present invention, by equivalent
Replacement and non-creativeness labour income to other embodiment or other combination obtained by embodiment each fall within protection of the present invention
Scope, protection scope of the present invention are defined by the claims.
Claims (7)
1. a kind of flash exports three crystal module circuits, it is characterised in that including：The first transistor, second transistor, the 3rd crystalline substance
Body pipe, energy storage delay unit, threshold adjustment unit and resistance R1, wherein：
The emitter stage of the first transistor connects positive source, and the first crystal pipe collector passes through resistance R1 connections ground, institute
The colelctor electrode for stating the first transistor is also connected with the input of the input of third transistor (grid or base stage) and energy storage delay unit
End, the positive terminal (source electrode or emitter stage) of the third transistor connect positive source, the output end (drain electrode of the third transistor
Or colelctor electrode) the connection second transistor colelctor electrode, the base stage of the second transistor connects the energy storage delay unit
Output end, the positive pole termination positive source of the energy storage delay unit, the emitter stage of the second transistor passes through the threshold
It is worth the base stage that adjustment unit connects the first transistor, described in the third transistor output end (drain electrode or colelctor electrode) is used as
Flash exports the output end of three crystal module circuits, for controlling the hot junction of external loading；
When the third transistor normally, the energy storage delay unit energy storage, the second transistor collector voltage
The emitter current for being elevated, making the second transistor is 0 and then ends the first transistor；When the 3rd crystal
When pipe excessively stream causes the third transistor saturation voltage drop to exceed the threshold adjustment unit on state threshold voltage, described second is brilliant
The emitter current of body pipe drives the first transistor conducting to end the third transistor and protected, when the energy storage is delayed
End the second transistor at the end of the energy storage release of unit and then make the first transistor cut-off energy storage simultaneously
Delay unit energy storage, the first transistor cut-off also promote the third transistor to turn on, and pass through the positive feedback effect of circuit
The third transistor is set to attempt to quickly enter saturation conduction state：The third transistor enters normal full if excessively stream releases
With conducting state, the emitter stage that the too high saturation voltage drop of the third transistor passes through the second transistor if excessively stream is continued
Electric current driving the first transistor conducting makes the third transistor cut-off continue to be protected.
2. flash according to claim 1 exports three crystal module circuits, it is characterised in that also includes：
Diode D6 and resistance R6, the diode D6 negative pole connect the second transistor colelctor electrode and the resistance simultaneously
R6 one end, the positive pole of the diode D6 connect the third transistor output end (drain electrode or colelctor electrode), the resistance R6
The other end connect the third transistor output end or ground connection.
3. a kind of flash exports three crystal module circuits, it is characterised in that including：The first transistor, second transistor, the 3rd crystalline substance
Body pipe, energy storage delay unit, threshold adjustment unit, resistance R1 and diode D6, wherein：
The emitter stage of the first transistor connects positive source, and the first crystal pipe collector is grounded by resistance R1, described
The colelctor electrode of the first transistor is also connected with the input (grid or base stage) of third transistor and the input of energy storage delay unit,
The positive terminal (source electrode or emitter stage) of the third transistor connects positive source, the output end of the third transistor (drain electrode or
Colelctor electrode) pass through the emitter stage of the diode D6 connections second transistor, the base stage connection institute of the second transistor
State the output end of energy storage delay unit, the output of the grounded collector or the connection third transistor of the second transistor
End, the positive pole termination positive source of the energy storage delay unit, the emitter stage of the second transistor pass through the adjusting thresholds
Unit connects the base stage of the first transistor, and the third transistor output end (drain electrode or colelctor electrode) is defeated as the flash
Go out the output end of three crystal module circuits, for controlling the hot junction of external loading；
When the third transistor normally, the energy storage delay unit energy storage, the emitter stage electricity of the second transistor
Pressure, which is elevated, ends the threshold adjustment unit and the first transistor；When the third transistor excessively stream causes described
When three transistor saturation voltage drops exceed the threshold adjustment unit on state threshold voltage, the emitter current of the second transistor
Drive the first transistor conducting to end the third transistor to be protected, when the energy storage of the energy storage delay unit discharges knot
End the second transistor during beam and then make the first transistor cut-off energy storage delay unit energy storage, institute simultaneously
Stating the first transistor cut-off also promotes the third transistor to turn on, and makes the third transistor by the positive feedback effect of circuit
Attempt to quickly enter saturation conduction state：If the third transistor enters normal saturation conduction state, held if excessively stream releases
Then the too high saturation voltage drop of the third transistor is brilliant by the emitter current driving first of the second transistor for continuous excessively stream
The conducting of body pipe makes the third transistor cut-off continue to be protected.
4. flash according to claim 3 exports three crystal module circuits, it is characterised in that：
Current-limiting resistance is serially connected with the collector loop or emitter circuit of the second transistor.
5. a kind of flash exports three crystal module circuits, it is characterised in that including：The first transistor, second transistor, the 3rd crystalline substance
Body pipe, energy storage delay unit, threshold adjustment unit, resistance R1 and diode D6, wherein：
The emitter stage of the first transistor connects positive source, and the first crystal pipe collector is grounded by resistance R1, described
The colelctor electrode of the first transistor is also connected with the input (grid or base stage) of third transistor and the input of energy storage delay unit,
The positive terminal (source electrode or emitter stage) of the third transistor connects positive source, the output end of the third transistor (drain electrode or
Colelctor electrode) institute is also connected with by the base stage of the diode D6 connections second transistor, the base stage of the second transistor
State the output end of energy storage delay unit, the output of the grounded collector or the connection third transistor of the second transistor
End, the positive pole termination positive source of the energy storage delay unit, the emitter stage of the second transistor pass through the adjusting thresholds
Unit connects the base stage of the first transistor, and the third transistor output end (drain electrode or colelctor electrode) is defeated as the flash
Go out the output end of three crystal module circuits, for controlling the hot junction of external loading；
When the third transistor normally, the energy storage delay unit energy storage, the base voltage of the second transistor
Being elevated is turned off the second transistor, the threshold adjustment unit and the first transistor；When the 3rd crystal
When pipe excessively stream causes the third transistor saturation voltage drop to exceed the threshold adjustment unit on state threshold voltage, prolong from energy storage
Shi Danyuan output end voltage makes the second transistor produce base current, the emitter current driving of the second transistor
The first transistor conducting ends the third transistor to be protected, at the end of the energy storage release of the energy storage delay unit
End the second transistor and then make the first transistor cut-off energy storage delay unit energy storage simultaneously, described the
One transistor cutoff also promotes the third transistor to turn on, and attempts the third transistor by the positive feedback effect of circuit
Quickly enter saturation conduction state：If the third transistor enters normal saturation conduction state, continued if excessively stream releases
Then the too high saturation voltage drop of the third transistor drives the first transistor to stream by the emitter current of the second transistor
Conducting makes the third transistor cut-off continue to be protected.
6. flash according to claim 5 exports three crystal module circuits, it is characterised in that：
Current-limiting resistance is serially connected with the collector loop or emitter circuit of the second transistor.
7. the flash according to claim 1 or 3 or 5 exports three crystal module circuits, it is characterised in that：
In the threshold adjustment unit or the base loop of the first transistor or on be serially connected with current-limiting resistance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711299628.6A CN107835004A (en) | 2017-12-10 | 2017-12-10 | Flash exports three crystal module circuits |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711299628.6A CN107835004A (en) | 2017-12-10 | 2017-12-10 | Flash exports three crystal module circuits |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107835004A true CN107835004A (en) | 2018-03-23 |
Family
ID=61642141
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711299628.6A Withdrawn CN107835004A (en) | 2017-12-10 | 2017-12-10 | Flash exports three crystal module circuits |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107835004A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111812567B (en) * | 2019-04-10 | 2023-08-04 | 西门子医疗有限公司 | Single stage amplifier with active feedback compensation |
-
2017
- 2017-12-10 CN CN201711299628.6A patent/CN107835004A/en not_active Withdrawn
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111812567B (en) * | 2019-04-10 | 2023-08-04 | 西门子医疗有限公司 | Single stage amplifier with active feedback compensation |
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Application publication date: 20180323 |