CN107947550A - Low side exports three crystal module circuits - Google Patents
Low side exports three crystal module circuits Download PDFInfo
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- CN107947550A CN107947550A CN201711299718.5A CN201711299718A CN107947550A CN 107947550 A CN107947550 A CN 107947550A CN 201711299718 A CN201711299718 A CN 201711299718A CN 107947550 A CN107947550 A CN 107947550A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
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Abstract
A kind of low side exports three crystal module circuits, including：The first transistor Q1 emitters ground connection, collector meets positive pole B+ by resistance R1, collector is also connected with the grid of third transistor Q3 and the input terminal of energy storage delay unit 5, transistor Q3 source electrodes are grounded, the collector of transistor Q3 drain electrode connections Q2, the output terminal of transistor Q2 base stages connection energy storage delay unit 5, the ground terminal ground connection of energy storage delay unit 5, the emitter of Q2 is used to control external loading by voltage-stabiliser tube D4 connection transistor Q1 base stages, transistor Q3 drain electrodes for modular circuit output terminal；The drain potential of power tube Q3 normallies drags down the stable state that Q2 collector potentials make Q1 cut-offs maintain power tube conducting; when power tube overcurrent; excessive saturation voltage drop makes Q1 turn on the power supply of rupturing duty pipe Q3 grids and keep it turned off to be protected circuit and enter temporary stable state by Q2; capacitance C5 discharges during this; when electric discharge terminates, circuit upset is the stable state.
Description
Technical field
The invention belongs to power device technical field of electronic control, more particularly to low side to export three crystal module circuits.
Background technology
Many power control circuits need to carry out overcurrent protection, are on the one hand the overcurrent protections to load, are on the other hand
The overcurrent of power control device (including field-effect tube, double pole triode, Darlington transistor, IGBT constant powers crystal) itself is protected
Shield, but existing many electronic control modules do not possess overcurrent protection function, when the reason such as load overload or line short causes mould
During block internal power pipe overcurrent, power tube easily damages.In the electronic control module that other possess power defencive function, its
Overcurrent protection often in load major loop series connection high current sample resistance, can so carry out overcurrent protection, but high current takes
Sample resistance volume is larger, it is larger to take board area, and the discrete type of bulk article is difficult to control, and more has some circuit mistakes
In complicated, protection act hysteresis, this all makes cost increase, failure rate increase, for the dedicated power collection with overcurrent protection
Into for circuit, on the one hand its design and manufacturing cycle length are of high cost, on the other hand its pressure voltage is relatively low is easy to breakdown, for
Its cost higher of the higher power chip of pressure voltage, so power control module damage often occurs, is particularly its power tube
Breakdown, general power control module cost is higher, if module damage, delays the equipment progress of work and brings economic loss.
The content of the invention
The present invention is the saturation voltage drop of direct sampled power controlling transistor, when the saturation voltage drop overflows, passes through circuit
Positive feedback pattern make " power D-flip flop " that prime small signal amplification circuit and power tube and feedback component form by turning on
State is drastically overturn as cut-off state, rapidly protects power tube in time, and the power module of discrete component manufacture its into
This is relatively low, pressure-resistant higher, makes power control module more safety durable reliable.
The technical solution adopted in the present invention is：
According to the first aspect of the present invention, there is provided a kind of low side exports three crystal module circuits, it is characterized in that
Including：The first transistor, second transistor, third transistor, energy storage delay unit, threshold adjustment unit and resistance R1, wherein,
The first transistor emitter ground connection, the first crystal pipe collector by resistance R1 connections power supply just
Pole, the collector of the first transistor are also connected with the input terminal of third transistor (grid or base stage) and energy storage delay unit
Input terminal, the third transistor ground terminal (source electrode or emitter) ground connection, the third transistor output terminal (drain electrode or
Collector) the connection second transistor collector, the base stage of the second transistor connects the energy storage delay unit
Output terminal, the ground terminal ground connection of the energy storage delay unit, the emitter of the second transistor pass through the adjusting thresholds list
Member connects the base stage of the first transistor, and the third transistor output terminal (drain electrode or collector) is as the low side output
The output terminal of three crystal module circuits, for controlling the cold end of external loading；
When the third transistor normally, the energy storage delay unit energy storage, the transmitting of the second transistor
Electrode current ends the first transistor for 0；When the third transistor overcurrent causes the third transistor saturation voltage drop
During more than the threshold adjustment unit on state threshold voltage, the emitter current driving the first transistor of the second transistor is led
Leading to, which ends the third transistor, is protected, and second crystalline substance is made at the end of the energy storage release of the energy storage delay unit
Body pipe ends and then makes the first transistor cut-off energy storage delay unit energy storage at the same time, the first transistor cut-off
Also promote the third transistor to turn on, make the third transistor attempt to quickly enter saturation by the positive feedback effect of circuit
Conducting state：The third transistor enters normal saturation conduction state, the described 3rd if overcurrent is continued if overcurrent releases
The excessive saturation voltage drop of transistor drives the first transistor conducting to make described the by the emitter current of the second transistor
Three transistor cutoffs continue to be protected.
Further, additionally provide a kind of low side and export three crystal module circuits, it, which is characterized in that, further includes：
The cathode of diode D6 and resistance R6, the diode D6 connect the second transistor collector and described at the same time
One end of resistance R6, the anode of the diode D6 connect the third transistor output terminal (drain electrode or collector), the electricity
The other end for hindering R6 connects the third transistor output terminal or connects the power supply of three crystal module circuits of the low side output just
Pole.
According to the second aspect of the present invention, there is provided a kind of low side exports three crystal module circuits, it is characterized in that
Including：The first transistor, second transistor, third transistor, energy storage delay unit, threshold adjustment unit, resistance R1 and two poles
Pipe D6, wherein,
The first transistor emitter ground connection, the first crystal pipe collector by resistance R1 connections power supply just
Pole, the collector of the first transistor are also connected with the input terminal of third transistor (grid or base stage) and energy storage delay unit
Input terminal, the third transistor ground terminal (source electrode or emitter) ground connection, the third transistor output terminal (drain electrode or
Collector) pass through the emitter of the diode D6 connections second transistor, the base stage connection institute of the second transistor
The output terminal of energy storage delay unit is stated, the collector connection low side of the second transistor exports three crystal module circuits
The output terminal of positive pole or the connection third transistor, the ground terminal ground connection of the energy storage delay unit, described second is brilliant
The emitter of body pipe connects the base stage of the first transistor, the third transistor output terminal by the threshold adjustment unit
(drain electrode or collector) exports the output terminal of three crystal module circuits as the low side, for controlling the cold end of external loading；
When the third transistor normally, the energy storage delay unit energy storage, the transmitting of the second transistor
Pole tension, which is pulled low, ends the threshold adjustment unit and the first transistor；When the third transistor overcurrent causes institute
When stating third transistor saturation voltage drop and exceeding the threshold adjustment unit on state threshold voltage, the emitter of the second transistor
Electric current drives the first transistor conducting to end the third transistor and is protected, when the energy storage of the energy storage delay unit is released
End the second transistor at the end of putting and then make the first transistor cut-off energy storage delay unit storage at the same time
Energy, the first transistor cut-off also promote the third transistor to turn on, and make the described 3rd by the positive feedback effect of circuit
Transistor attempts to quickly enter saturation conduction state：The third transistor enters normal saturation conduction shape if overcurrent releases
State, the excessive saturation voltage drop of the third transistor is driven by the emitter current of the second transistor if overcurrent is continued
The first transistor conducting makes the third transistor cut-off continue to be protected.
Further, additionally provide a kind of low side and export three crystal module circuits, it is characterized in that：Described second
Current-limiting resistance is serially connected with the collector loop or emitter circuit of transistor.
According to the third aspect of the present invention, there is provided a kind of low side exports three crystal module circuits, it is characterized in that
Including：The first transistor, second transistor, third transistor, energy storage delay unit, threshold adjustment unit, resistance R1 and two poles
Pipe D6, wherein,
The first transistor emitter ground connection, the first crystal pipe collector by resistance R1 connections power supply just
Pole, the collector of the first transistor are also connected with the input terminal of third transistor (grid or base stage) and energy storage delay unit
Input terminal, the third transistor ground terminal (source electrode or emitter) ground connection, the third transistor output terminal (drain electrode or
Collector) institute is also connected with by the base stage of the diode D6 connections second transistor, the base stage of the second transistor
The output terminal of energy storage delay unit is stated, the collector connection low side of the second transistor exports three crystal module circuits
The output terminal of positive pole or the connection third transistor, the ground terminal ground connection of the energy storage delay unit, described second is brilliant
The emitter of body pipe connects the base stage of the first transistor, the third transistor output terminal by the threshold adjustment unit
(drain electrode or collector) exports the output terminal of three crystal module circuits as the low side, for controlling the cold end of external loading；
When the third transistor normally, the energy storage delay unit energy storage, the base stage of the second transistor
Voltage, which is pulled low, is turned off the second transistor, the threshold adjustment unit and the first transistor；When the described 3rd
When transistor overcurrent causes the third transistor saturation voltage drop to exceed the threshold adjustment unit on state threshold voltage, from storage
The output end voltage of energy delay unit makes the second transistor produce base current, the emitter current of the second transistor
Drive the first transistor conducting to end the third transistor to be protected, when the energy storage of the energy storage delay unit discharges knot
End the second transistor during beam and then make the first transistor cut-off energy storage delay unit energy storage, institute at the same time
Stating the first transistor cut-off also promotes the third transistor to turn on, and makes the third transistor by the positive feedback effect of circuit
Attempt to quickly enter saturation conduction state：If the third transistor enters normal saturation conduction state, holds if overcurrent releases
Then the excessive saturation voltage drop of the third transistor is brilliant by the emitter current driving first of the second transistor for continuous overcurrent
The conducting of body pipe makes the third transistor cut-off continue to be protected.
Further, additionally provide a kind of low side and export three crystal module circuits, it is characterized in that：Described second
Current-limiting resistance is serially connected with the collector loop or emitter circuit of transistor.
Further, additionally provide a kind of low side and export three crystal module circuits, it is characterized in that：In the threshold value
On adjustment unit or the base loop of the first transistor or on be serially connected with current-limiting resistance.
The beneficial effects of the invention are as follows：Due to high current sampling resistor that need not be required as the sampling of prior art overcurrent, and
The saturation voltage drop of direct sampled power controlling transistor, by the positive feedback pattern of circuit make prime small signal amplification circuit and
" the power D-flip flop " of power tube and feedback element composition is drastically overturn by conducting state as cut-off state, so to power tube
Protection it is extremely rapid, and circuit structure design is ingenious, succinct, component is less, cost is low and discrete component manufacture
Its cost of power module is relatively low, pressure-resistant higher, and reliability is better than integrated circuit, is easy to scale volume production, makes power module more
Reliably, it is one of core control technology in power electronic control module field of independent research, economic benefit and social benefit are bright
It is aobvious.
Brief description of the drawings
Fig. 1 is that the first low side that embodiment of the present invention first aspect provides exports three crystal module circuits,
Fig. 2 is that another low side that embodiment of the present invention first aspect provides exports three crystal module circuits,
Fig. 3 is that another low side that embodiment of the present invention first aspect provides exports three crystal module circuits,
Fig. 4 is that second of low side that embodiment of the present invention second aspect provides exports three crystal module circuits,
Fig. 5 is that another low side that embodiment of the present invention second aspect provides exports three crystal module circuits,
Fig. 6 is that the third low side that the embodiment of the present invention third aspect provides exports three crystal module circuits,
Fig. 7 is that another low side that the embodiment of the present invention third aspect provides exports three crystal module circuits.
Embodiment
The present invention is without the high current sample resistance as needed for the sampling of prior art overcurrent, but directly sampled power control
The saturation voltage drop of transistor, makes prime small signal amplification circuit and power tube and feedback element group by the positive feedback pattern of circuit
Into " power D-flip flop " drastically overturn by conducting state as cut-off state, so the protection to power tube is extremely rapid, under
Face in conjunction with specific embodiments carries out the present invention more detailed elaboration.
In a first aspect, embodiment of the present invention, which provides a kind of low side, exports three crystal module circuits.
Embodiment 1
A kind of low side exports three crystal module circuits, as shown in Figure 1, its circuit structure feature includes：The first transistor 1
(Q1), second transistor 2 (Q2), third transistor 3 (Q3), threshold adjustment unit 4, energy storage delay unit 5 and resistance R1, its
In：
The emitter ground connection of the first transistor Q1, first crystal pipe collector is by resistance R1 connection positive pole B+, and the
The collector of one transistor is also connected with the input terminal (grid) of third transistor Q3 and the input terminal of energy storage delay unit 5, and the 3rd
Ground terminal (source electrode) ground connection (i.e. E, the same below) of transistor Q3, the output terminal (drain electrode) of third transistor Q3 connect the second crystal
The collector of pipe Q2, the output terminal of the base stage connection energy storage delay unit 5 of second transistor Q2, the ground connection of energy storage delay unit 5
End ground connection, the emitter of second transistor Q2 connect the base of the first transistor Q1 by threshold adjustment unit 4 (i.e. voltage-stabiliser tube D4)
Pole, third transistor Q3 output terminals F (drain electrode) export the output terminal of three crystal module circuits as low side, exterior negative for controlling
The cold end of load, when third transistor Q3 is using double pole triode, Darlington transistor or IGBT, its corresponding input terminal is base
Pole, ground terminal are emitter, output terminal is collector (the same below)；Energy storage delay unit 5 therein has diode D5, resistance
The anode of R5 and capacitance C5, diode D5 connect one end of resistance R5 and one end of capacitance C5 at the same time, and the cathode of diode D5 is made
For the input terminal of energy storage delay unit, the ground terminal of the other end of capacitance C5 as energy storage delay unit, the other end of resistance R5
Output terminal as energy storage delay unit.
When third transistor Q3 normallies, transistor Q1 is cut-off state, and positive pole B+ is capacitance through resistance R1
C5 charging energy-storings, since power tube Q3 is turned on, its saturation voltage drop that drains is very low (generally in 0.1V~1.0V scopes), and second is brilliant
The collector of body pipe Q2 is dragged down by it, and second transistor Q2 collector junction positively biaseds make the emitter current of second transistor be 0, first
Therefore transistor ends, such third transistor Q3 saturation conductions are stable state.
When due to load overload or short circuit cause third transistor overcurrent when reason when, the collector junction meeting of second transistor Q2
Generation positively biased (forward bias), emitter meeting output voltage U2e, as power tube Q3 drain voltages raise, triode Q2 current collections
Pole tension also raises, and triode Q2 emitter voltages Ue2 is also increased, when the Ue2 is elevated above threshold adjustment unit voltage stabilizing
During the on state threshold voltage of pipe D4, the emitter current driving the first transistor Q1 conductings of triode Q2 cut third transistor Q3
Only protected, there are positive feedback process in this course：Q1 base potentials ↑ → Q1 collector potentials ↓ → Q3 grid potentials ↓
→ Q3 drain potentials ↑ → Q2 collector potentials ↑ → Q2 transmittings electrode potential ↑ → D4 → Q1 base potentials ↑, this strong positive feedback
Journey makes circuit drastically overturn for power tube Q3 cut-off states, but the cut-off state is temporary stable state, because when energy storage delay unit 5
At the end of storage capacitor C5 electric energy discharges, second transistor Q2 can end and then end the first transistor Q1, while energy storage is prolonged
5 energy storage of Shi Danyuan, the first transistor Q1 cut-offs also promote third transistor Q3 to turn on, and by the positive feedback effect of circuit, it is just
Feedback procedure is：Cause Q2 base potentials ↓ → Q2 transmittings electrode potential ↓ → D4 → Q1 base stages electricity since C5 discharge currents are gradually reduced
Position ↓ → Q1 collector potentials ↑ → Q3 grid potentials ↑ → Q3 drain potentials ↓ → Q2 collector potentials ↓ → Q2 transmittings electrode potential ↓, make
Third transistor Q3 attempts to quickly enter saturation conduction state：If overcurrent, which releases third transistor Q3, enters normal saturation conduction shape
State, saturation voltage drop Uds excessive third transistor Q3 if overcurrent is continued are driven by the emitter current of second transistor Q2
The first transistor Q1 conductings make third transistor Q3 cut-offs continue to be protected.
On the basis of above-described embodiment 1, additionally provide a kind of low side and export three crystal module circuits, as shown in Fig. 2, should
Circuit enters diode D6 and resistance R6 in the collector loop of the second transistor Q2 of circuit shown in above-mentioned Fig. 1, diode D6's
Cathode connects one end of second transistor Q2 collectors and resistance R6 at the same time, and the anode connection third transistor Q3 of diode D6 is defeated
Outlet (drain electrode), the output terminal of the other end connection third transistor Q3 of resistance R6.Its course of work and circuit shown in above-mentioned Fig. 1
It is basically identical, triode Q2 collector potentials are only dragged down by diode D6 in power tube Q3 normallies, at this time three pole
Pipe Q2 collector potentials are low level by diode D6 clampers, therefore triode Q2 transmitting electrode potentials are insufficient to allow voltage-stabiliser tube D4 to lead
Logical, this is the stable state of power tube conducting, and when power tube Q3 drain potentials raise, the collector of triode Q2 is made by resistance R6
Current potential raises, and triode Q2 transmittings electrode potential Ue2 is also increased, when Ue2 rises to over voltage-stabiliser tube D4 conduction thresholds, three
Pole pipe Q1 is turned on, and ends power tube Q2, and circuit enters temporary stable state.
Equally on the basis of above-described embodiment 1, additionally provide a kind of low side and export three crystal module circuits, such as Fig. 3 institutes
Show, collector loop of the circuit in the second transistor Q2 of circuit shown in above-mentioned Fig. 1 seals in diode D6, also add resistance
R6, the cathode of diode D6 connect one end of second transistor Q2 collectors and resistance R6, the anode connection of diode D6 at the same time
Third transistor Q3 output terminals (drain electrode), the other end of resistance R6 connect the positive pole that low side exports three crystal module circuits.
Its course of work is also basically identical with circuit shown in above-mentioned Fig. 1, is only drawn in power tube Q3 normallies by diode D6
Low triode Q2 collector potentials, triode Q2 collector potentials are low level by diode D6 clampers at this time, therefore triode Q2
Transmitting electrode potential is insufficient to allow voltage-stabiliser tube D4 to turn on, this is the stable state of power tube conducting, when power tube Q3 drain potentials raise,
By the clamper of diode D6, raise triode Q2 collector potentials by resistance R6, triode Q2 emitters output current potential Ue2
Also increase, when Ue2 rises to over voltage-stabiliser tube D4 conduction thresholds, triode Q1 conductings, end power tube Q2, circuit
Into temporary stable state.
Second aspect, embodiment of the present invention additionally provide a kind of low side and export three crystal module circuits.
Embodiment 2
A kind of low side exports three crystal module circuits, and as shown in Figure 4 and Figure 5, its design feature includes：The first transistor 1
(Q1), second transistor 2 (Q2), third transistor (Q3), energy storage delay unit 5, threshold adjustment unit 4, resistance R1 and two poles
Pipe D6, wherein：
The emitter ground connection of the first transistor Q1, the first transistor Q1 collectors are by resistance R1 connection positive poles, and the
The collector of one transistor Q1 is also connected with the input terminal (grid) of third transistor Q3 and the input terminal of energy storage delay unit 5, the
Ground terminal (source electrode) ground connection of three transistor Q3, the output terminal (drain electrode) of third transistor Q3 are brilliant by diode D6 connections second
The emitter of body pipe Q2, the output terminal of the base stage connection energy storage delay unit 5 of second transistor Q2, the current collection of second transistor Q2
Pole connect low side export three crystal module circuits positive pole B+ (see Fig. 4) or connection third transistor Q3 output terminal (see
Fig. 5), the ground terminal ground connection of energy storage delay unit 5, the emitter of second transistor Q2 connect first by threshold adjustment unit 4
The base stage of transistor Q1, the output terminal (drain electrode) of third transistor Q3 export the output terminal of three crystal module circuits as low side,
For controlling the cold end of external loading；Energy storage delay unit 5 therein has diode D5, resistance R5 and capacitance C5, diode
The anode of D5 connects one end of resistance R5 and one end of capacitance C5 at the same time, and the cathode of diode D5 is as the defeated of energy storage delay unit
Enter end, the ground terminal of the other end of capacitance C5 as energy storage delay unit, the other end of resistance R5 is as energy storage delay unit
Output terminal.
When third transistor Q3 normallies, the capacitance C5 charging energy-storings of energy storage delay unit 5, charge path is：Electricity
Source cathode B+ → resistance R1 → diode D5 → capacitance C5 → ground, third transistor Q3 are turned on, its drain electrode is low potential (general field
Effect pipe saturation voltage drop is 0.1~1.0V), the emitting voltage of second transistor is dragged down by diode D6, is not enough to reach
The conduction threshold of zener diode D4 in threshold adjustment unit 4, ends the first transistor Q1, Q3 saturation conductions, which is
Stable state.
When due to load overload or short circuit cause third transistor Q3 overcurrents when reason when, excessive operating current will be
With its larger pressure drop in its internal resistance, over the ground for its drain potential can be than being raised during normally, when rising to over voltage stabilizing
During pipe D4 conduction thresholds, the emitter current of second transistor Q2 can drive the first transistor Q1 to turn on, and export its collector
Low potential, diode D5 cut-offs, capacitance C5 are discharged by resistance R5 → Q2 emitter junctions → D4 → Q1 emitter junctions → ground, and Q1 is led
Leading to, which also ends third transistor Q3, is protected, and makes second transistor Q2 at the end of the C5 energy storage release of energy storage delay unit
End and then the capacitance C5 of the first transistor Q1 cut-offs while energy storage delay unit 5 is continued energy storage, the first transistor Q1 recoveries
Cut-off, also promote third transistor Q3 turn on, by the positive feedback effect of circuit make third transistor Q3 attempt to quickly enter it is full
And conducting state：Third transistor Q3 enters normal saturation conduction state, the 3rd crystal if overcurrent is continued if overcurrent releases
Saturation voltage drop excessive pipe Q3 drives the first transistor to turn on Q1 by the emitter current of second transistor Q2 makes the 3rd crystal
Pipe Q3 cut-offs continue to be protected.
It can be readily appreciated that current limiting electricity can also be concatenated on the collector loop or emitter circuit of second transistor
Resistance, is operating current with limit transistor.
The third aspect, embodiment of the present invention additionally provide a kind of low side and export three crystal module circuits.
Embodiment 3
A kind of low side exports three crystal module circuits, and as shown in Figure 6 and Figure 7, its design feature includes：The first transistor 1
(Q1), second transistor 2 (Q2), third transistor 3 (Q3), energy storage delay unit 5, threshold adjustment unit 4, resistance R1 and two poles
Pipe D6, wherein
The emitter ground connection of the first transistor Q1, the first transistor Q1 collectors by resistance R1 connection positive pole B+,
The collector of the first transistor Q1 is also connected with the input terminal (grid) of third transistor Q3 and the input terminal of energy storage delay unit 5,
Ground terminal (source electrode) ground connection of third transistor Q3, the output terminal (drain electrode) of third transistor Q3 pass through diode D6 connections second
The base stage of transistor Q2, the base stage of second transistor Q2 are also connected with the output terminal of energy storage delay unit 5, the collection of second transistor Q2
Electrode connects the output terminal F (figures that low side exports the positive pole B+ (Fig. 7) or connection third transistor Q3 of three crystal module circuits
6), the ground terminal ground connection of energy storage delay unit 5, the emitter of second transistor Q2 are brilliant by the connection of threshold adjustment unit 4 first
The base stage of body pipe Q1, third transistor Q3 output terminals (drain electrode) export the output terminal of three crystal module circuits as low side, are used for
Control the cold end of external loading.
When third transistor Q3 normallies, the capacitance C5 charging energy-storings of energy storage delay unit 5, charge path is：Electricity
Source cathode B+ → resistance R1 → diode D5 → capacitance C5 → ground, third transistor Q3 are turned on, its drain electrode is low potential (general field
Effect pipe saturation voltage drop is 0.1~1.0V), the base potential of second transistor Q2 is dragged down by diode D6, the second crystal
The emitter voltage of pipe Q2 is also pulled low, and is not enough to the conduction threshold for reaching zener diode D4 in threshold adjustment unit 4, makes
One transistor Q1 ends, and Q3 saturation conductions, the state is stable state.
When third transistor Q3 overcurrents, when third transistor saturation voltage drop exceedes the D4 conduction thresholds of threshold adjustment unit
During voltage, second transistor Q2 conductings：
In figure 6：The emitter current of Q2 includes base current Ib2, its source is capacitance C5 cathodes → resistance R5 → Q2
Emitter junction, also comprising Q2 collector current Ic2, its path source is the excessive saturation voltage drop Uds → Q2 collection of power tube Q2 drain electrodes
Electrode → Q2 emitters, general collector current manyfold bigger than base current, reasonably selects resistance R5, can limit three poles
The collector current of pipe Q2 is unlikely to the permissible value beyond Q2, that is, Ic2=β Ib2, wherein β are direct current amplification factor；
In the figure 7：The emitter current of Q2 includes base current Ib2, its source is capacitance C5 cathodes → resistance R5 → Q2
Emitter junction, also comprising Q2 collector current Ic2, its path source is positive pole B+ → Q2 collectors → Q2 emitters, generally
Collector current manyfold bigger than base current, reasonably selects resistance R5, can limit the collector current of triode Q2 not
As for the permissible value beyond Q2, that is, Ic2=β Ib2, wherein β are direct current amplification factor.
The emitter current driving the first transistor Q1 conductings of above-mentioned second transistor Q2, its collector export low electricity
Position, diode D5 cut-offs, capacitance C5 are discharged by resistance R5 → Q2 emitter junctions → D4 → Q1 emitter junctions → ground, and Q1 conductings are also
End third transistor Q3 to be protected, cut second transistor Q2 at the end of the C5 energy storage release of energy storage delay unit
Only and then the capacitance C5 of the first transistor Q1 cut-offs while energy storage delay unit 5 is set to continue energy storage, the first transistor Q1 recoveries section
Only, also promote third transistor Q3 to turn on, make third transistor Q3 attempt to quickly enter saturation by the positive feedback effect of circuit
Conducting state：Third transistor Q3 enters normal saturation conduction state, the third transistor if overcurrent is continued if overcurrent releases
Saturation voltage drop excessive Q3 drives the first transistor to turn on Q1 by the emitter current of second transistor Q2 makes third transistor
Q3 cut-offs continue to be protected.
It can be readily appreciated that current limiting electricity can also be concatenated on the collector loop or emitter circuit of second transistor
Resistance, with the operating current of limit transistor.In threshold adjustment unit that can also be in the above-described embodiments or the first transistor
Base loop or on be serially connected with current-limiting resistance, with the operating current of further limit transistor.
By the more detailed elaboration of above-mentioned several embodiments, the important document structure of circuit can be extracted：With triode Q1,
Power tube Q3 forms a kind of special trigger for core, and now the trigger is analyzed：
Triode Q1 and resistance R1 compositions are common emitter amplifying circuits, from one kind of base stage input, collector output
Small-signal phase inverter, power tube Q3 and external load form the power amplification circuit of common source or common emitter, be from grid or
A kind of power inverter of base stage input, drain electrode or collector output, the output terminal connection of small-signal phase inverter is that power is anti-
It is anti-phase to be connected to power as feedback link for the time-delay reset trigger circuit of the element such as the input terminal of phase device, triode Q2 composition
Between the output terminal of device and the input terminal of small-signal phase inverter, simple understanding is：If it is connected to an only feedback resistance
Between the output terminal of power inverter and the input terminal of small-signal phase inverter, then two phase inverters and feedback resistance form bistable
The trigger of state, is a kind of set-reset flip-flop, but one of phase inverter is power device, and it is special that this is just constituted
" power trigger device ", and the feedback link main function of the element such as foregoing triode Q2 composition is：Clamper -- overcurrent is touched for conducting
-- time-delay reset -- fast energy storage is sent out, so just realizes Power Control (in the i.e. " IN of triode Q1 base stages with relatively simple structure
Terminal " input control signal control power tube conducting and cut-off), time-delay reset, power tube saturation voltage drop voltage sampling, overcurrent protect
The power control module circuit of shield, overcurrent action quick response function.Circuit structure ball bearing made, the discrete component system of the present invention
Its cost of the power module made is relatively low, pressure-resistant higher, reliability is better than integrated circuit, is easy to that thick film is integrated, is widely used, is preceding
Scape is preferable.It can be applied to generator voltage controller, power vehicle window controller, wiper motor controller, motor control
Device etc..
The embodiment of the present invention is merely to illustrate technical scheme, is not limitation of the present invention, by equivalent
Replacement and non-creative labour income to other embodiment or other combine obtained embodiments and each fall within protection of the present invention
Scope, protection scope of the present invention are defined by the claims.
Claims (7)
1. a kind of low side exports three crystal module circuits, it is characterised in that including：The first transistor, second transistor, the 3rd crystalline substance
Body pipe, energy storage delay unit, threshold adjustment unit and resistance R1, wherein：
The emitter ground connection of the first transistor, the first crystal pipe collector pass through resistance R1 connection positive poles, institute
The collector for stating the first transistor is also connected with the input of the input terminal of third transistor (grid or base stage) and energy storage delay unit
End, ground terminal (the source electrode or emitter) ground connection of the third transistor, output terminal (drain electrode or the current collection of the third transistor
Pole) the connection second transistor collector, the base stage of the second transistor connects the output of the energy storage delay unit
End, the ground terminal ground connection of the energy storage delay unit, the emitter of the second transistor are connected by the threshold adjustment unit
The base stage of the first transistor is connect, the third transistor output terminal (drain electrode or collector) is brilliant as the low side output three
The output terminal of module circuit, for controlling the cold end of external loading；
When the third transistor normally, the energy storage delay unit energy storage, the emitter electricity of the second transistor
Flow ends the first transistor for 0；When the third transistor overcurrent causes the third transistor saturation voltage drop to exceed
During the threshold adjustment unit on state threshold voltage, the emitter current driving the first transistor conducting of the second transistor makes
The third transistor, which is ended, to be protected, and makes the second transistor at the end of the energy storage release of the energy storage delay unit
End and then the first transistor cut-off energy storage delay unit energy storage at the same time, the first transistor cut-off is also promoted
The third transistor is turned on, makes the third transistor attempt to quickly enter saturation conduction by the positive feedback effect of circuit
State：The third transistor enters normal saturation conduction state, the 3rd crystal if overcurrent is continued if overcurrent releases
Manage excessive saturation voltage drop drives the first transistor conducting to make the 3rd crystalline substance by the emitter current of the second transistor
The cut-off of body pipe continues to be protected.
2. low side according to claim 1 exports three crystal module circuits, it is characterised in that further includes：
The cathode of diode D6 and resistance R6, the diode D6 connect the second transistor collector and the resistance at the same time
One end of R6, the anode of the diode D6 connect the third transistor output terminal (drain electrode or collector), the resistance R6
The other end connect the third transistor output terminal or the connection low side exports the positive pole of three crystal module circuits.
3. a kind of low side exports three crystal module circuits, it is characterised in that including：The first transistor, second transistor, the 3rd crystalline substance
Body pipe, energy storage delay unit, threshold adjustment unit, resistance R1 and diode D6, wherein：
The emitter ground connection of the first transistor, the first crystal pipe collector pass through resistance R1 connection positive poles, institute
The collector for stating the first transistor is also connected with the input of the input terminal of third transistor (grid or base stage) and energy storage delay unit
End, ground terminal (the source electrode or emitter) ground connection of the third transistor, output terminal (drain electrode or the current collection of the third transistor
Pole) pass through the emitter of the diode D6 connections second transistor, the base stage connection storage of the second transistor
The output terminal of energy delay unit, the collector connection low side of the second transistor export the power supply of three crystal module circuits
The output terminal of cathode or the connection third transistor, the ground terminal ground connection of the energy storage delay unit, the second transistor
Emitter pass through the base stage that the threshold adjustment unit connects the first transistor, the third transistor output terminal (leakage
Pole or collector) output terminals of three crystal module circuits is exported as the low side, for controlling the cold end of external loading；
When the third transistor normally, the energy storage delay unit energy storage, the emitter electricity of the second transistor
Pressure, which is pulled low, ends the threshold adjustment unit and the first transistor；When the third transistor overcurrent causes described
When three transistor saturation voltage drops exceed the threshold adjustment unit on state threshold voltage, the emitter current of the second transistor
Drive the first transistor conducting to end the third transistor to be protected, when the energy storage of the energy storage delay unit discharges knot
End the second transistor during beam and then make the first transistor cut-off energy storage delay unit energy storage, institute at the same time
Stating the first transistor cut-off also promotes the third transistor to turn on, and makes the third transistor by the positive feedback effect of circuit
Attempt to quickly enter saturation conduction state：If the third transistor enters normal saturation conduction state, holds if overcurrent releases
Then the excessive saturation voltage drop of the third transistor is brilliant by the emitter current driving first of the second transistor for continuous overcurrent
The conducting of body pipe makes the third transistor cut-off continue to be protected.
4. low side according to claim 3 exports three crystal module circuits, it is characterised in that：
Current-limiting resistance is serially connected with the collector loop or emitter circuit of the second transistor.
5. a kind of low side exports three crystal module circuits, it is characterised in that including：The first transistor, second transistor, the 3rd crystalline substance
Body pipe, energy storage delay unit, threshold adjustment unit, resistance R1 and diode D6, wherein：
The emitter ground connection of the first transistor, the first crystal pipe collector pass through resistance R1 connection positive poles, institute
The collector for stating the first transistor is also connected with the input of the input terminal of third transistor (grid or base stage) and energy storage delay unit
End, ground terminal (the source electrode or emitter) ground connection of the third transistor, output terminal (drain electrode or the current collection of the third transistor
Pole) storage is also connected with by the base stage of the diode D6 connections second transistor, the base stage of the second transistor
The output terminal of energy delay unit, the collector connection low side of the second transistor export the power supply of three crystal module circuits
The output terminal of cathode or the connection third transistor, the ground terminal ground connection of the energy storage delay unit, the second transistor
Emitter pass through the base stage that the threshold adjustment unit connects the first transistor, the third transistor output terminal (leakage
Pole or collector) output terminals of three crystal module circuits is exported as the low side, for controlling the cold end of external loading；
When the third transistor normally, the energy storage delay unit energy storage, the base voltage of the second transistor
Being pulled low is turned off the second transistor, the threshold adjustment unit and the first transistor；When the 3rd crystal
When pipe overcurrent causes the third transistor saturation voltage drop to exceed the threshold adjustment unit on state threshold voltage, prolong from energy storage
The output end voltage of Shi Danyuan makes the second transistor produce base current, the emitter current driving of the second transistor
The first transistor conducting ends the third transistor to be protected, at the end of the energy storage release of the energy storage delay unit
End the second transistor and then make the first transistor cut-off energy storage delay unit energy storage at the same time, described the
One transistor cutoff also promotes the third transistor to turn on, and attempts the third transistor by the positive feedback effect of circuit
Quickly enter saturation conduction state：If the third transistor enters normal saturation conduction state, continued if overcurrent releases
Then the excessive saturation voltage drop of the third transistor drives the first transistor to stream by the emitter current of the second transistor
Conducting makes the third transistor cut-off continue to be protected.
6. low side according to claim 5 exports three crystal module circuits, it is characterised in that：
Current-limiting resistance is serially connected with the collector loop or emitter circuit of the second transistor.
7. the low side according to claim 1 or 3 or 5 exports three crystal module circuits, it is characterised in that：
In the threshold adjustment unit or the base loop of the first transistor or on be serially connected with current-limiting resistance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711299718.5A CN107947550A (en) | 2017-12-10 | 2017-12-10 | Low side exports three crystal module circuits |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711299718.5A CN107947550A (en) | 2017-12-10 | 2017-12-10 | Low side exports three crystal module circuits |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107947550A true CN107947550A (en) | 2018-04-20 |
Family
ID=61945350
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711299718.5A Withdrawn CN107947550A (en) | 2017-12-10 | 2017-12-10 | Low side exports three crystal module circuits |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107947550A (en) |
-
2017
- 2017-12-10 CN CN201711299718.5A patent/CN107947550A/en not_active Withdrawn
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Application publication date: 20180420 |