CN107829133A - A kind of flame melt method numerical control crystal growing furnace - Google Patents
A kind of flame melt method numerical control crystal growing furnace Download PDFInfo
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- CN107829133A CN107829133A CN201711211207.3A CN201711211207A CN107829133A CN 107829133 A CN107829133 A CN 107829133A CN 201711211207 A CN201711211207 A CN 201711211207A CN 107829133 A CN107829133 A CN 107829133A
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- screen cloth
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- 239000013078 crystal Substances 0.000 title claims abstract description 86
- 238000000034 method Methods 0.000 title claims abstract description 25
- 239000004744 fabric Substances 0.000 claims abstract description 64
- 230000007246 mechanism Effects 0.000 claims abstract description 36
- 230000008520 organization Effects 0.000 claims abstract description 31
- 239000000463 material Substances 0.000 claims abstract description 15
- 239000002994 raw material Substances 0.000 claims abstract description 15
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000000446 fuel Substances 0.000 claims abstract description 8
- 239000010453 quartz Substances 0.000 claims abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000007789 gas Substances 0.000 claims description 36
- 239000002737 fuel gas Substances 0.000 claims description 25
- 238000004140 cleaning Methods 0.000 claims description 3
- 238000009434 installation Methods 0.000 claims description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract description 12
- 238000000354 decomposition reaction Methods 0.000 abstract description 3
- 229910052712 strontium Inorganic materials 0.000 abstract description 3
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 abstract description 3
- 238000009826 distribution Methods 0.000 description 7
- 239000000203 mixture Substances 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 230000008569 process Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 230000033001 locomotion Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 229910009372 YVO4 Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000000686 essence Substances 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000002887 superconductor Substances 0.000 description 1
- LSGOVYNHVSXFFJ-UHFFFAOYSA-N vanadate(3-) Chemical compound [O-][V]([O-])([O-])=O LSGOVYNHVSXFFJ-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
- C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
- C30B11/10—Solid or liquid components, e.g. Verneuil method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/006—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/32—Titanates; Germanates; Molybdates; Tungstates
Abstract
The invention belongs to field of new materials, is a kind of flame melt method numerical control crystal growing furnace, including:Crystal growth system, including crystal growing furnace, penetrate in crystal growing furnace, for the crystal growth pedestal bar of the carrier as crystal growth, the lifting speed controlling organization that quartz crystal grows pedestal bar and move up and down is transferred to by motor driven turn-screw；Material supply system, including taper raw material cabin, set screen cloth in the raw material cabin, and the charging aperture of the raw material cabin is provided with screen cloth vibrating mechanism；Fuel system, growth room is connected to by pipeline；Numerical control system, control signal is sent to lifting speed controlling organization, screen cloth vibration amplitude controlling organization, screen cloth vibration frequency control mechanism and gas handling system, and for setting control parameter.The present invention is particularly the high-temperature oxide monocrystal under melt state with decomposition tendency, such as strontium titanates, rutile monocrystal at a high temperature of can growing the complete high-quality of microstructure.
Description
Technical field
The invention belongs to field of new materials, is particularly a kind of flame melt method numerical control crystal growing furnace.
Background technology
Rutile monocrystal is preparing optoisolator, optical circulator, risen because having high birefringence and chemical stability
There is irreplaceable advantage in the devices such as inclined device.As high temperature oxide single crystals such as rutile, melted using traditional flame
The growth of method crystal growing furnace.
In traditional flame melt method crystal growing furnace, in crystal growth mechanism not using accurate turn-screw and numeral
Control, fuel gas are not controlled without using accurate turn-screw sum using accurate gas mass flow gauge, raw material
Word controls, and whole system does not have unified quality control system.Because growthing process parameter is without accurate digital control, growth
For speed typically in more than 10mm/h, the speed of growth is fast, environment of crystal growth, especially temperature field, is unfavorable for complete optical grade
Crystal, the speed of growth is very fast, growth interface, and entirely the Temperature Distribution in growth room, composition distribution cannot be guaranteed high-quality
Crystal growth.Cause grown crystal in structural intergrity, for example dislocation density is high, stress is big, uneven etc., particularly
The growth of rutile monocrystal, product qualified rate are very low.
For the method for crystal growth by crystal pulling stove being commonly used, because growth course is vacuum or the protection in high temperature
Carried out down under atmosphere, there are strict requirements to the crucible material for containing melt.It is required that crucible material high temperature resistant, it is corrosion-resistant,
Chemical erosion etc., typically valuable Iridium Crucible does not occur with melt so that the cost of whole growth furnace improves.To wanting
The crystal of growth also has under strict requirements, such as high temperature, particularly solution, does not decompose.And as high temperature such as rutile
Oxide single crystal at high temperature, is had very high decomposition pressure, is difficult to grow height using czochralski method particularly under melt state
The rutile monocrystal of quality.
Rutile (TiO2) monocrystal birefringence is big, refractive index is big, for example optically isolated for spectroscope prism, polarizer
Device, optical circulator, beam splitter etc..Above-mentioned device currently used for optical communication uses Yttrium Orthovanadate（YVO4）Crystal, high-end production
Product must use rutile (TiO2) monocrystal.For another example, strontium titanates（STiO3）Monocrystal, it is very typical superconduction base
Sheet material, but be difficult to grow using czochralski method.
Using traditional crystal growing furnace, because many growthing process parameters are not accurately controlled, the speed of growth is very fast,
Temperature Distribution, composition distribution in growth interface, and whole growth room is it cannot be guaranteed that the crystal growth of high-quality.Cause to give birth to
Long crystal is in structural intergrity, for example dislocation density is high, stress is big, uneven etc..
Establish the accurate temperature field for being adapted to crystalchecked growth and composition is distributed, removing influences crystalline substance in crystal growing process
The factor of weight is extremely necessary to growing optics-level rutile monocrystal and other high-quality high-temp oxide crystals.
The content of the invention
The technical problems to be solved by the invention are to provide a kind of flame melt method numerical control crystal growing furnace, can accurately controlled
The parameters of crystal growth processed, Temperature Distribution, composition distribution and mechanics distribution in growth room are ensured, can be grown microcosmic
Being particularly at a high temperature of the high-quality of structural integrity has the high-temperature oxide monocrystal for decomposing tendency, such as metatitanic acid under melt state
The monocrystal such as strontium, rutile.
The present invention is achieved in that
A kind of flame melt method numerical control crystal growing furnace, it is characterised in that the growth furnace includes:
Crystal growth system, including crystal growing furnace, penetrate in crystal growing furnace, the crystal for the carrier as crystal growth
Pedestal bar is grown, being transferred to quartz crystal by motor driven turn-screw grows the lifting speed control that moves up and down of pedestal bar
Mechanism processed；
Material supply system, including taper raw material cabin, screen cloth, the charging aperture installation of the raw material cabin are set in the raw material cabin
There is screen cloth vibrating mechanism；
Fuel system, growth room is connected to by pipeline；
Numerical control system, to lifting speed controlling organization, screen cloth vibration amplitude controlling organization, screen cloth vibration frequency control mechanism
And gas handling system sends control signal, and for setting control parameter.
Further, the fuel system includes fuel gas source and fuel gas pipeline, float gas flow
Meter, digital gas flowmeter, fuel gas controlling organization；Fuel gas source is connected to crystal growth by fuel gas pipeline
Stove, set float gas flowmeter to be used for signal piping gas station on fuel gas pipeline, digital gas flowmeter is set
For accurately controlling the flow of gas, fuel gas controlling organization is by sealing in the dehumidifying of fuel gas pipeline, drying, purify and set
It is standby, the clean gas for meeting technological requirement is provided to digital gas flowmeter.
Further, Material supply system includes：
Screen cloth vibration amplitude controlling organization, regulation of the control screen cloth vibrating mechanism to the vibration amplitude of screen cloth；
Screen cloth vibration frequency control mechanism, regulation of the control screen cloth vibrating mechanism to the vibration frequency of screen cloth.
Further, the screen cloth vibration amplitude controlling organization includes the interior empty support column parallel with crystal growth pedestal bar
I, is provided with connecting rod in the support column I, and the connecting rod passes through the lifting of a motor driven connecting rod, the connecting rod
End connect a cross bar, the cross bar one end connection screen cloth vibrating mechanism.
Further, the screen cloth vibration frequency control mechanism exports transverse axis by a motor, at least a piece of on transverse axis
Depression bar, transverse axis drive depression bar to rotate, the depression bar and the beam contact.
Further, the motor of the screen cloth vibration frequency control mechanism is fixed on the support column II parallel with support column I
On.
Further, the crystal growing furnace and Material supply system are fixed on support column I periphery.
Further, the numerical control system passes through screen cloth vibration amplitude controlling organization and screen cloth vibration frequency control
The amplitude and frequency of mechanism controls screen cloth reach the control of charging.
Compared with prior art, beneficial effect is the present invention：
The flame melt method numerical control crystal growing furnace of the present invention can be used for growing Special high-temperature oxide single crystal.Special high-temperature aoxidizes
Thing monocrystal refers to that fusing point has the oxide single crystal of decomposition of components tendency more than 1600 DEG C, under high temperature fused state.By
In realizing the precise figures control to parameter, temperature conditionss, composition condition and the mechanics bar required for crystal growth are improved
The control accuracy of part, realizes accurate control of the speed of growth in 2-50mm/h sections, and the crystal perfection grown is good.High temperature
Oxide single crystal, such as rutile monocrystal, strontium titanate monocrystal body, for preparing the optics such as the polarizer, superconductor substrate device
Part etc., it is widely used in making the numerous areas such as optoisolator, optical circulator, superconductive device.
The present invention is by carrying out accurate mechanical structure to crystal growth mechanism, fuel organization of supply and raw material supply mechanism
Design, increase corresponding control electricity, realize and gas flow, raw material supply amount and crystal growth speed are set in real time in control system
Degree, realizes the digital control of crystal growth, storage technology data and can call at any time（It is shown on striking screen, computer screen
On curtain, print）.The present invention can establish suitable temperature field in body of heater, meet growing optics-level rutile monocrystal
Requirement.According to retrieval result, there is presently no with function identical of the present invention disclosed in Special Equipment and device.
Brief description of the drawings
Fig. 1 is the structural representation of the present invention.
Embodiment
In order to make the purpose , technical scheme and advantage of the present invention be clearer, with reference to embodiments, to the present invention
It is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, it is not used to
Limit the present invention.
A kind of flame melt method numerical control crystal growing furnace of the present invention, by crystal growth system, fuel system, raw material
Supply system, the part of numerical control system four are formed, and see Fig. 1.
Referring to Fig. 1, crystal growth system of the present invention includes crystal growing chamber 5, crystal growth pedestal bar 4, transmission
Leading screw 3 and lifting speed controlling organization 17.Crystal growth pedestal bar is penetrated in crystal growing furnace, for as crystal growth
Carrier, lifting speed controlling organization drive turn-screw 3 to be transferred to quartz crystal growth pedestal bar 4 and do fortune up and down by motor 2
It is dynamic；
Turn-screw 3, which is arranged on, to be driven by controlled motor on a basic framework 1, forms the upper and lower of movement velocity controllable precise
（Lifting）Motion, and crystal growth pedestal bar 4 is passed motion to, so as to accurately control the lifting speed of crystal.
Fuel system includes fuel gas source 7, fuel gas pipeline 6, float gas flowmeter 8, digital gas stream
Gauge 9 and fuel gas controlling organization 19.Fuel gas source 7 includes fuel gas and combustion-supporting gas, and fuel gas can be
Hydrogen, acetylene gas etc., combustion-supporting gas are oxygen.Fuel gas pipeline 6 is connected to crystal growing chamber, is stainless steel or polymer tube
Line.Float gas flowmeter 8 is used for signal piping gas station, digital gas with the float gas flowmeter 8 of digital gas flowmeter 9
Flowmeter body 9 is used for the flow for accurately controlling gas.Fuel gas controlling organization 19 is by sealing in the dehumidifying of gas passage, doing
Dry, cleaning equipment, the clean gas for meeting technological requirement is provided to digital gas flowmeter.
Material supply system includes raw material cabin 10, screen cloth 11, screen cloth vibrating mechanism 12, screen cloth vibration amplitude controlling organization
13rd, screen cloth vibration frequency control mechanism, screen cloth vibration frequency control motor 15, screen cloth vibration amplitude controlled motor 16 are formed.It is former
Feed bin 10 is used to hold crystal raw material；Screen cloth 11 and screen cloth vibrating mechanism 12 are used to be fed；Screen cloth vibration amplitude controlling organization 13,
Screen cloth vibration frequency control mechanism, screen cloth vibration frequency control motor 15, screen cloth vibration amplitude controlled motor 16 are used to accurately supply
Material.
Screen cloth vibration amplitude controlling organization includes the interior empty support column I21 parallel with crystal growth pedestal bar, in support column
Connecting rod is provided with I21, for connecting rod by the lifting of motor driven connecting rod, the end of connecting rod connects a cross bar 20, horizontal
One end connection screen cloth vibrating mechanism of bar 20, screen cloth vibrating mechanism can be the hammer body of up-down vibration.
Screen cloth vibration frequency control mechanism exports transverse axis by screen cloth vibration frequency control motor 15, at least one on transverse axis
Piece depression bar 14, transverse axis drive depression bar 14 to rotate, depression bar and beam contact, and the upper of cross bar is adjusted by the velocity of rotation for adjusting depression bar
Bottom dynamic frequency is so as to controlling the vibration frequency of screen cloth vibrating mechanism.
The motor of screen cloth vibration frequency control mechanism is fixed on the support column II22 parallel with support column I.
Crystal growing furnace and Material supply system are fixed on support column I periphery.
Numerical control system passes through screen cloth vibration amplitude controlling organization and screen cloth vibration frequency control mechanism controls screen cloth
Amplitude and frequency reach the control of charging.
Numerical control system of the present invention controls lifting speed controlling organization 2, digital gas flowmeter 9, screen cloth to shake
Dynamic frequency controlling organization 14, screen cloth vibration frequency control motor 15, screen cloth vibration amplitude controlling organization 16, numerical control system tool
There is computer 18 to be manipulated by touch-screen.Lifting speed controlling organization 2, digital gas flowmeter 9, screen cloth vibration frequency control mechanism
14 and screen cloth vibration amplitude controlling organization 16 by encoder and software, realize the both-way communication of data and computer 18.Pass through
The growthing process parameters such as the lifting speed of touch-screen and computer input data instruction control crystal growth, feeding speed, temperature field,
Control growth course；Pass through the real-time monitoring to growth course technological parameter in real time of touch-screen and computer；Technological parameter is carried out
Storage, call, the exploitation for crystal growth new varieties, new technology.
The crystal grown using the numerical control crystal growing furnace of the present invention, speed of growth stability contorting are complete in 6mm/h, crystal
Whole property is fine.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all essences in the present invention
All any modification, equivalent and improvement made within refreshing and principle etc., should be included in the scope of the protection.
Claims (8)
1. a kind of flame melt method numerical control crystal growing furnace, it is characterised in that the growth furnace includes:
Crystal growth system, including crystal growing furnace, penetrate in crystal growing furnace, the crystal for the carrier as crystal growth
Pedestal bar is grown, being transferred to quartz crystal by motor driven turn-screw grows the lifting speed control that moves up and down of pedestal bar
Mechanism processed；
Material supply system, including taper raw material cabin, screen cloth, the charging aperture installation of the raw material cabin are set in the raw material cabin
There is screen cloth vibrating mechanism；
Fuel system, growth room is connected to by pipeline；
Numerical control system, to lifting speed controlling organization, screen cloth vibration amplitude controlling organization, screen cloth vibration frequency control mechanism
And gas handling system sends control signal, and for setting control parameter.
2. according to the flame melt method numerical control crystal growing furnace described in claim 1, it is characterised in that the fuel system includes
Fuel gas source and fuel gas pipeline, float gas flowmeter, digital gas flowmeter, fuel gas controlling organization；Fuel
Gas source is connected to crystal growing furnace by fuel gas pipeline, sets float gas flowmeter to be used on fuel gas pipeline
Signal piping gas station, sets digital gas flowmeter to be used for the flow for accurately controlling gas, and fuel gas controlling organization leads to
Cross and seal in the dehumidifying, dry of fuel gas pipeline, cleaning equipment, the cleaning for meeting technological requirement is provided to digital gas flowmeter
Gas.
3. according to the flame melt method numerical control crystal growing furnace described in claim 1, it is characterised in that Material supply system includes：
Screen cloth vibration amplitude controlling organization, regulation of the control screen cloth vibrating mechanism to the vibration amplitude of screen cloth；
Screen cloth vibration frequency control mechanism, regulation of the control screen cloth vibrating mechanism to the vibration frequency of screen cloth.
4. according to the flame melt method numerical control crystal growing furnace described in claim 3, it is characterised in that the screen cloth vibration amplitude control
Mechanism includes the interior empty support column I parallel with crystal growth pedestal bar, and connecting rod, the company are provided with the support column I
For extension bar by the lifting of motor driven connecting rod, the end of the connecting rod connects a cross bar, one end connection sieve of the cross bar
Net vibrating mechanism.
5. according to the flame melt method numerical control crystal growing furnace described in claim 4, it is characterised in that the screen cloth vibration frequency control
Mechanism exports transverse axis, at least a piece of depression bar on transverse axis by motor, and transverse axis drives depression bar to rotate, the depression bar and the cross bar
Contact.
6. according to the flame melt method numerical control crystal growing furnace described in claim 5, it is characterised in that the screen cloth vibration frequency
The motor of controlling organization is fixed on the support column II parallel with support column I.
7. according to the flame melt method numerical control crystal growing furnace described in claim 4, it is characterised in that the crystal growing furnace and original
Material supply system is fixed on support column I periphery.
8. according to the flame melt method numerical control crystal growing furnace described in claim 4, it is characterised in that the numerical control system passes through
The amplitude and frequency of screen cloth vibration amplitude controlling organization and screen cloth vibration frequency control mechanism controls screen cloth reach the control of charging
System.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711211207.3A CN107829133A (en) | 2017-11-28 | 2017-11-28 | A kind of flame melt method numerical control crystal growing furnace |
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| CN201711211207.3A CN107829133A (en) | 2017-11-28 | 2017-11-28 | A kind of flame melt method numerical control crystal growing furnace |
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| CN107829133A true CN107829133A (en) | 2018-03-23 |
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|---|---|---|---|---|
| CN109161960A (en) * | 2018-11-07 | 2019-01-08 | 沈阳工程学院 | A kind of plasma method numerical control crystal growing furnace |
| CN111005063A (en) * | 2019-12-27 | 2020-04-14 | 沈阳工程学院 | High-precision crystal growth powder setting control device |
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| CN111005063A (en) * | 2019-12-27 | 2020-04-14 | 沈阳工程学院 | High-precision crystal growth powder setting control device |
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