A kind of flame melt method numerical control crystal growing furnace
Technical field
The invention belongs to field of new materials, are particularly a kind of flame melt method numerical control crystal growing furnace.
Background technology
Rutile monocrystal is because with high birefringence and chemical stability, preparing optoisolator, optical circulator, rising
There is irreplaceable advantage in the devices such as inclined device.As high temperature oxide single crystals such as rutile, melted using traditional flame
The growth of method crystal growing furnace.
In traditional flame melt method crystal growing furnace, in crystal growth mechanism not using accurate turn-screw and number
Control, fuel gas is not using accurate gas mass flow gauge, and raw material control is without using accurate turn-screw sum number
Word controls, and whole system does not have unified quality control system.Since growthing process parameter is without accurate digital control, growth
For speed generally in more than 10mm/h, the speed of growth is fast, and environment of crystal growth, especially temperature field are unfavorable for complete optical grade
Crystal, the speed of growth is very fast, growth interface and entirely grows indoor Temperature Distribution, composition distribution it cannot be guaranteed that high-quality
Crystal growth.Lead to grown crystal in structural intergrity, for example dislocation density is high, stress is big, uneven etc., particularly
The growth of rutile monocrystal, product qualified rate are very low.
For the method for crystal growth by crystal pulling stove being commonly used, since growth course is vacuum or the protection in high temperature
It is carried out down under atmosphere, there are strict requirements to the crucible material for containing melt.It is required that crucible material high temperature resistant, it is corrosion-resistant,
Chemical erosion etc., typically valuable Iridium Crucible does not occur with melt so that the cost of entire growth furnace improves.To wanting
The crystal of growth also has under strict requirements, such as high temperature, particularly solution, does not decompose.And as high temperature such as rutile
Oxide single crystal at high temperature, is had very high decomposition pressure, is difficult to grow height using czochralski method particularly under melt state
The rutile monocrystal of quality.
Rutile (TiO2) monocrystal birefringence is big, refractive index is big, for example optically isolated for spectroscope prism, polarizer
Device, optical circulator, beam splitter etc..Above-mentioned device currently used for optical communication uses Yttrium Orthovanadate(YVO4)Crystal, high-end production
Product must use rutile (TiO2) monocrystal.For another example, strontium titanates(STiO3)Monocrystal is very typical superconduction base
Sheet material, but be difficult to grow using czochralski method.
Using traditional crystal growing furnace, since many growthing process parameters are not accurately controlled, the speed of growth is very fast,
Growth interface and entirely grow indoor Temperature Distribution, composition distribution it cannot be guaranteed that high-quality crystal growth.Cause to give birth to
Long crystal is in structural intergrity, for example dislocation density is high, stress is big, uneven etc..
It establishes the accurate temperature field for being suitble to crystalchecked growth and composition is distributed, removing influences crystalline substance in crystal growing process
The factor of weight is extremely necessary to growing optics-level rutile monocrystal and other high-quality high-temp oxide crystals.
Invention content
The technical problems to be solved by the invention are to provide a kind of flame melt method numerical control crystal growing furnace, can accurately control
The parameters of crystal growth processed ensure and grow indoor Temperature Distribution, composition distribution and mechanics distribution, can grow microcosmic
The high-temperature oxide monocrystal for having under melt state and decomposing tendency, such as metatitanic acid are particularly at a high temperature of the high-quality of structural integrity
The monocrystal such as strontium, rutile.
The invention is realized in this way
A kind of flame melt method numerical control crystal growing furnace, which is characterized in that the growth furnace includes:
Crystal growth system including crystal growing furnace, is penetrated in crystal growing furnace, for the carrier as crystal growth
Crystal growth pedestal bar drives turn-screw to be transferred to the lifting speed that quartz crystal grows pedestal bar and moves up and down by motor
Spend control mechanism;
Material supply system including taper raw material cabin, sets sieve, the feed inlet of the raw material cabin in the raw material cabin
Sieve vibrating mechanism is installed;
Fuel system is connected to growth room by pipeline;
Numerical control system, to lifting speed control mechanism, sieve vibration amplitude control mechanism, sieve vibration frequency control
Mechanism and gas handling system send out control signal, and for setting control parameter.
Further, the fuel system includes fuel gas source and fuel gas pipeline, float gas flow
Meter, digital gas flowmeter, fuel gas control mechanism;Fuel gas source is connected to crystal growth by fuel gas pipeline
Stove sets float gas flowmeter to set digital gas flowmeter for signal piping gas station on fuel gas pipeline
For accurately controlling the flow of gas, fuel gas control mechanism is by sealing in the dehumidifying of fuel gas pipeline, drying, purify and set
It is standby, the clean gas of technological requirement is met to the offer of digital gas flowmeter.
Further, Material supply system includes:
Sieve vibration amplitude control mechanism, adjusting of the control sieve vibrating mechanism to the vibration amplitude of sieve;
Sieve vibration frequency control mechanism, adjusting of the control sieve vibrating mechanism to the vibration frequency of sieve.
Further, the sieve vibration amplitude control mechanism includes the interior empty support column parallel with crystal growth pedestal bar
I, is provided with connecting rod in the support column I, and the connecting rod drives the lifting of connecting rod, the connecting rod by a motor
End connect a cross bar, the cross bar one end connection sieve vibrating mechanism.
Further, the sieve vibration frequency control mechanism exports horizontal axis by a motor, at least a piece of on transverse axis
Compression bar, horizontal axis drive compression bar rotation, the compression bar and the beam contact.
Further, the motor of the sieve vibration frequency control mechanism is fixed on the support column II parallel with support column I
On.
Further, the crystal growing furnace and Material supply system are fixed on the periphery of support column I.
Further, the numerical control system passes through sieve vibration amplitude control mechanism and sieve vibration frequency control
The amplitude and frequency of mechanism controls sieve reach the control of charging.
Compared with prior art, the present invention advantageous effect is:
The flame melt method numerical control crystal growing furnace of the present invention can be used for growing Special high-temperature oxide single crystal.Special high-temperature
Oxide single crystal refers to that fusing point has the oxide monocrystal of decomposition of components tendency under 1600 DEG C or more, high temperature fused state
Body.Due to realizing the precise figures control to parameter, the required temperature condition of crystal growth, composition condition and power are improved
The control accuracy of condition, realizes accurate control of the speed of growth in 2-50mm/h sections, and the crystal perfection grown is good.
High-temperature oxide monocrystal such as rutile monocrystal, strontium titanate monocrystal body, is used to prepare the optical devices such as the polarizer, superconduction base
Piece device etc. is widely used in making the numerous areas such as optoisolator, optical circulator, superconductive device.
The present invention is by carrying out crystal growth mechanism, fuel organization of supply and raw material supply mechanism accurate mechanical structure
Design increases corresponding control electricity, realizes and sets gas flow, raw material supply amount and crystal growth speed in real time in control system
Degree, realizes the digital control of crystal growth, storage technology data and can at any time call(It is shown on striking screen, computer screen
On curtain, print).The present invention can establish suitable temperature field in furnace body, meet growing optics-level rutile monocrystal
Requirement.According to retrieval result, there is presently no the disclosed special equipment identical with function of the present invention and devices.
Description of the drawings
Fig. 1 is the structure diagram of the present invention.
Specific embodiment
In order to make the purpose , technical scheme and advantage of the present invention be clearer, with reference to embodiments, to the present invention
It is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, it is not used to
Limit the present invention.
A kind of flame melt method numerical control crystal growing furnace of the present invention, by crystal growth system, fuel system, raw material
Supply system, four part of numerical control system are formed, and see Fig. 1.
Referring to Fig. 1, crystal growth system of the present invention includes crystal growing chamber 5, crystal growth pedestal bar 4, transmission
Leading screw 3 and lifting speed control mechanism 17.Crystal growth pedestal bar is penetrated in crystal growing furnace, for as crystal growth
Carrier, lifting speed control mechanism drive turn-screw 3 to be transferred to quartz crystal growth pedestal bar 4 and do fortune up and down by motor 2
It is dynamic;
Turn-screw 3 is mounted on a basic framework 1 by the driving of control motor, forms the upper of movement velocity controllable precise
Under(Lifting)Movement, and crystal growth pedestal bar 4 is passed motion to, so as to accurately control the lifting speed of crystal.
Fuel system includes fuel gas source 7, fuel gas pipeline 6, float gas flowmeter 8, digital gas stream
Gauge 9 and fuel gas control mechanism 19.Fuel gas source 7 includes fuel gas and combustion-supporting gas, and fuel gas can be
Hydrogen, acetylene gas etc., combustion-supporting gas are oxygen.Fuel gas pipeline 6 is connected to crystal growing chamber, is stainless steel or polymer tube
Line.Float gas flowmeter 8 is with 9 float gas flowmeter 8 of digital gas flowmeter for signal piping gas station, digital gas
Flowmeter body 9 is for the accurate flow for controlling gas.Fuel gas control mechanism 19 is by sealing in the dehumidifying of gas passage, doing
Dry, cleaning equipment meets the clean gas of technological requirement to the offer of digital gas flowmeter.
Material supply system includes raw material cabin 10, sieve 11, sieve vibrating mechanism 12, sieve vibration amplitude control mechanism
13rd, sieve vibration frequency control mechanism, sieve vibration frequency control motor 15, sieve vibration amplitude control motor 16 are formed.It is former
Feed bin 10 is used to hold crystal raw material;Sieve 11 and sieve vibrating mechanism 12 are used to be fed;Sieve vibration amplitude control mechanism 13,
Sieve vibration frequency control mechanism, sieve vibration frequency control motor 15, sieve vibration amplitude control motor 16 are for accurately confession
Material.
Sieve vibration amplitude control mechanism includes the interior empty support column I21 parallel with crystal growth pedestal bar, in support column
Connecting rod is provided in I21, connecting rod drives the lifting of connecting rod by motor, and the end of connecting rod connects a cross bar 20, horizontal
One end connection sieve vibrating mechanism of bar 20, sieve vibrating mechanism can be the hammer body of up-down vibration.
Sieve vibration frequency control mechanism exports horizontal axis by sieve vibration frequency control motor 15, and on transverse axis at least one
Piece compression bar 14, horizontal axis drive compression bar 14 to rotate, compression bar and beam contact, and the upper of cross bar is adjusted by adjusting the velocity of rotation of compression bar
Bottom dynamic frequency is so as to control the vibration frequency of sieve vibrating mechanism.
The motor of sieve vibration frequency control mechanism is fixed on the support column II22 parallel with support column I.
Crystal growing furnace and Material supply system are fixed on the periphery of support column I.
Numerical control system passes through sieve vibration amplitude control mechanism and sieve vibration frequency control mechanism controls sieve
Amplitude and frequency reach the control of charging.
Numerical control system of the present invention controls lifting speed control mechanism 2, digital gas flowmeter 9, sieve to shake
Dynamic frequency control mechanism 14, sieve vibration frequency control motor 15, sieve vibration amplitude control mechanism 16, numerical control system tool
There is computer 18 to be manipulated by touch screen.Lifting speed control mechanism 2, digital gas flowmeter 9, sieve vibration frequency control mechanism
14 and sieve vibration amplitude control mechanism 16 by encoder and software, realize data and the both-way communication of computer 18.Pass through
The growthing process parameters such as lifting speed, feeding speed, the temperature field of touch screen and computer input data instruction control crystal growth,
Control growth course;By touch screen and computer in real time to the real time monitoring of growth course technological parameter;Technological parameter is carried out
Storage is called, for crystal growth new varieties, the exploitation of new process.
Using the crystal that is grown of numerical control crystal growing furnace of the present invention, for speed of growth stability contorting in 6mm/h, crystal is complete
Whole property is fine.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all essences in the present invention
All any modification, equivalent and improvement made within refreshing and principle etc., should all be included in the protection scope of the present invention.