CN207537594U - A kind of flame melt method numerical control crystal growing furnace - Google Patents

A kind of flame melt method numerical control crystal growing furnace Download PDF

Info

Publication number
CN207537594U
CN207537594U CN201721611398.8U CN201721611398U CN207537594U CN 207537594 U CN207537594 U CN 207537594U CN 201721611398 U CN201721611398 U CN 201721611398U CN 207537594 U CN207537594 U CN 207537594U
Authority
CN
China
Prior art keywords
sieve
growing furnace
crystal growing
crystal
control
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201721611398.8U
Other languages
Chinese (zh)
Inventor
毕孝国
周文平
唐坚
刘旭东
孙旭东
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shenyang Xinpu Crystal Technology Co., Ltd
Original Assignee
Shenyang Institute of Engineering
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenyang Institute of Engineering filed Critical Shenyang Institute of Engineering
Priority to CN201721611398.8U priority Critical patent/CN207537594U/en
Application granted granted Critical
Publication of CN207537594U publication Critical patent/CN207537594U/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Abstract

The utility model belongs to field of new materials, is a kind of flame melt method numerical control crystal growing furnace, including:Crystal growth system including crystal growing furnace, is penetrated in crystal growing furnace, for the crystal growth pedestal bar of the carrier as crystal growth, turn-screw is driven to be transferred to the lifting speed control mechanism that quartz crystal grows pedestal bar and moves up and down by motor;Material supply system including taper raw material cabin, sets sieve in the raw material cabin, and the feed inlet of the raw material cabin is equipped with sieve vibrating mechanism;Fuel system is connected to growth room by pipeline;Numerical control system sends out control signal, and for setting control parameter to lifting speed control mechanism, sieve vibration amplitude control mechanism, sieve vibration frequency control mechanism and gas handling system.The utility model is particularly the high-temperature oxide monocrystal for having under melt state and decomposing tendency, such as strontium titanates, rutile monocrystal at a high temperature of can growing the complete high-quality of microstructure.

Description

A kind of flame melt method numerical control crystal growing furnace
Technical field
The invention belongs to field of new materials, are particularly a kind of flame melt method numerical control crystal growing furnace.
Background technology
Rutile monocrystal is because with high birefringence and chemical stability, preparing optoisolator, optical circulator, rising There is irreplaceable advantage in the devices such as inclined device.As high temperature oxide single crystals such as rutile, melted using traditional flame The growth of method crystal growing furnace.
In traditional flame melt method crystal growing furnace, in crystal growth mechanism not using accurate turn-screw and number Control, fuel gas is not using accurate gas mass flow gauge, and raw material control is without using accurate turn-screw sum number Word controls, and whole system does not have unified quality control system.Since growthing process parameter is without accurate digital control, growth For speed generally in more than 10mm/h, the speed of growth is fast, and environment of crystal growth, especially temperature field are unfavorable for complete optical grade Crystal, the speed of growth is very fast, growth interface and entirely grows indoor Temperature Distribution, composition distribution it cannot be guaranteed that high-quality Crystal growth.Lead to grown crystal in structural intergrity, for example dislocation density is high, stress is big, uneven etc., particularly The growth of rutile monocrystal, product qualified rate are very low.
For the method for crystal growth by crystal pulling stove being commonly used, since growth course is vacuum or the protection in high temperature It is carried out down under atmosphere, there are strict requirements to the crucible material for containing melt.It is required that crucible material high temperature resistant, it is corrosion-resistant, Chemical erosion etc., typically valuable Iridium Crucible does not occur with melt so that the cost of entire growth furnace improves.To wanting The crystal of growth also has under strict requirements, such as high temperature, particularly solution, does not decompose.And as high temperature such as rutile Oxide single crystal at high temperature, is had very high decomposition pressure, is difficult to grow height using czochralski method particularly under melt state The rutile monocrystal of quality.
Rutile (TiO2) monocrystal birefringence is big, refractive index is big, for example optically isolated for spectroscope prism, polarizer Device, optical circulator, beam splitter etc..Above-mentioned device currently used for optical communication uses Yttrium Orthovanadate(YVO4)Crystal, high-end production Product must use rutile (TiO2) monocrystal.For another example, strontium titanates(STiO3)Monocrystal is very typical superconduction base Sheet material, but be difficult to grow using czochralski method.
Using traditional crystal growing furnace, since many growthing process parameters are not accurately controlled, the speed of growth is very fast, Growth interface and entirely grow indoor Temperature Distribution, composition distribution it cannot be guaranteed that high-quality crystal growth.Cause to give birth to Long crystal is in structural intergrity, for example dislocation density is high, stress is big, uneven etc..
It establishes the accurate temperature field for being suitble to crystalchecked growth and composition is distributed, removing influences crystalline substance in crystal growing process The factor of weight is extremely necessary to growing optics-level rutile monocrystal and other high-quality high-temp oxide crystals.
Invention content
The technical problems to be solved by the invention are to provide a kind of flame melt method numerical control crystal growing furnace, can accurately control The parameters of crystal growth processed ensure and grow indoor Temperature Distribution, composition distribution and mechanics distribution, can grow microcosmic The high-temperature oxide monocrystal for having under melt state and decomposing tendency, such as metatitanic acid are particularly at a high temperature of the high-quality of structural integrity The monocrystal such as strontium, rutile.
The invention is realized in this way
A kind of flame melt method numerical control crystal growing furnace, which is characterized in that the growth furnace includes:
Crystal growth system including crystal growing furnace, is penetrated in crystal growing furnace, for the carrier as crystal growth Crystal growth pedestal bar drives turn-screw to be transferred to the lifting speed that quartz crystal grows pedestal bar and moves up and down by motor Spend control mechanism;
Material supply system including taper raw material cabin, sets sieve, the feed inlet of the raw material cabin in the raw material cabin Sieve vibrating mechanism is installed;
Fuel system is connected to growth room by pipeline;
Numerical control system, to lifting speed control mechanism, sieve vibration amplitude control mechanism, sieve vibration frequency control Mechanism and gas handling system send out control signal, and for setting control parameter.
Further, the fuel system includes fuel gas source and fuel gas pipeline, float gas flow Meter, digital gas flowmeter, fuel gas control mechanism;Fuel gas source is connected to crystal growth by fuel gas pipeline Stove sets float gas flowmeter to set digital gas flowmeter for signal piping gas station on fuel gas pipeline For accurately controlling the flow of gas, fuel gas control mechanism is by sealing in the dehumidifying of fuel gas pipeline, drying, purify and set It is standby, the clean gas of technological requirement is met to the offer of digital gas flowmeter.
Further, Material supply system includes:
Sieve vibration amplitude control mechanism, adjusting of the control sieve vibrating mechanism to the vibration amplitude of sieve;
Sieve vibration frequency control mechanism, adjusting of the control sieve vibrating mechanism to the vibration frequency of sieve.
Further, the sieve vibration amplitude control mechanism includes the interior empty support column parallel with crystal growth pedestal bar I, is provided with connecting rod in the support column I, and the connecting rod drives the lifting of connecting rod, the connecting rod by a motor End connect a cross bar, the cross bar one end connection sieve vibrating mechanism.
Further, the sieve vibration frequency control mechanism exports horizontal axis by a motor, at least a piece of on transverse axis Compression bar, horizontal axis drive compression bar rotation, the compression bar and the beam contact.
Further, the motor of the sieve vibration frequency control mechanism is fixed on the support column II parallel with support column I On.
Further, the crystal growing furnace and Material supply system are fixed on the periphery of support column I.
Further, the numerical control system passes through sieve vibration amplitude control mechanism and sieve vibration frequency control The amplitude and frequency of mechanism controls sieve reach the control of charging.
Compared with prior art, the present invention advantageous effect is:
The flame melt method numerical control crystal growing furnace of the present invention can be used for growing Special high-temperature oxide single crystal.Special high-temperature Oxide single crystal refers to that fusing point has the oxide monocrystal of decomposition of components tendency under 1600 DEG C or more, high temperature fused state Body.Due to realizing the precise figures control to parameter, the required temperature condition of crystal growth, composition condition and power are improved The control accuracy of condition, realizes accurate control of the speed of growth in 2-50mm/h sections, and the crystal perfection grown is good. High-temperature oxide monocrystal such as rutile monocrystal, strontium titanate monocrystal body, is used to prepare the optical devices such as the polarizer, superconduction base Piece device etc. is widely used in making the numerous areas such as optoisolator, optical circulator, superconductive device.
The present invention is by carrying out crystal growth mechanism, fuel organization of supply and raw material supply mechanism accurate mechanical structure Design increases corresponding control electricity, realizes and sets gas flow, raw material supply amount and crystal growth speed in real time in control system Degree, realizes the digital control of crystal growth, storage technology data and can at any time call(It is shown on striking screen, computer screen On curtain, print).The present invention can establish suitable temperature field in furnace body, meet growing optics-level rutile monocrystal Requirement.According to retrieval result, there is presently no the disclosed special equipment identical with function of the present invention and devices.
Description of the drawings
Fig. 1 is the structure diagram of the present invention.
Specific embodiment
In order to make the purpose , technical scheme and advantage of the present invention be clearer, with reference to embodiments, to the present invention It is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, it is not used to Limit the present invention.
A kind of flame melt method numerical control crystal growing furnace of the present invention, by crystal growth system, fuel system, raw material Supply system, four part of numerical control system are formed, and see Fig. 1.
Referring to Fig. 1, crystal growth system of the present invention includes crystal growing chamber 5, crystal growth pedestal bar 4, transmission Leading screw 3 and lifting speed control mechanism 17.Crystal growth pedestal bar is penetrated in crystal growing furnace, for as crystal growth Carrier, lifting speed control mechanism drive turn-screw 3 to be transferred to quartz crystal growth pedestal bar 4 and do fortune up and down by motor 2 It is dynamic;
Turn-screw 3 is mounted on a basic framework 1 by the driving of control motor, forms the upper of movement velocity controllable precise Under(Lifting)Movement, and crystal growth pedestal bar 4 is passed motion to, so as to accurately control the lifting speed of crystal.
Fuel system includes fuel gas source 7, fuel gas pipeline 6, float gas flowmeter 8, digital gas stream Gauge 9 and fuel gas control mechanism 19.Fuel gas source 7 includes fuel gas and combustion-supporting gas, and fuel gas can be Hydrogen, acetylene gas etc., combustion-supporting gas are oxygen.Fuel gas pipeline 6 is connected to crystal growing chamber, is stainless steel or polymer tube Line.Float gas flowmeter 8 is with 9 float gas flowmeter 8 of digital gas flowmeter for signal piping gas station, digital gas Flowmeter body 9 is for the accurate flow for controlling gas.Fuel gas control mechanism 19 is by sealing in the dehumidifying of gas passage, doing Dry, cleaning equipment meets the clean gas of technological requirement to the offer of digital gas flowmeter.
Material supply system includes raw material cabin 10, sieve 11, sieve vibrating mechanism 12, sieve vibration amplitude control mechanism 13rd, sieve vibration frequency control mechanism, sieve vibration frequency control motor 15, sieve vibration amplitude control motor 16 are formed.It is former Feed bin 10 is used to hold crystal raw material;Sieve 11 and sieve vibrating mechanism 12 are used to be fed;Sieve vibration amplitude control mechanism 13, Sieve vibration frequency control mechanism, sieve vibration frequency control motor 15, sieve vibration amplitude control motor 16 are for accurately confession Material.
Sieve vibration amplitude control mechanism includes the interior empty support column I21 parallel with crystal growth pedestal bar, in support column Connecting rod is provided in I21, connecting rod drives the lifting of connecting rod by motor, and the end of connecting rod connects a cross bar 20, horizontal One end connection sieve vibrating mechanism of bar 20, sieve vibrating mechanism can be the hammer body of up-down vibration.
Sieve vibration frequency control mechanism exports horizontal axis by sieve vibration frequency control motor 15, and on transverse axis at least one Piece compression bar 14, horizontal axis drive compression bar 14 to rotate, compression bar and beam contact, and the upper of cross bar is adjusted by adjusting the velocity of rotation of compression bar Bottom dynamic frequency is so as to control the vibration frequency of sieve vibrating mechanism.
The motor of sieve vibration frequency control mechanism is fixed on the support column II22 parallel with support column I.
Crystal growing furnace and Material supply system are fixed on the periphery of support column I.
Numerical control system passes through sieve vibration amplitude control mechanism and sieve vibration frequency control mechanism controls sieve Amplitude and frequency reach the control of charging.
Numerical control system of the present invention controls lifting speed control mechanism 2, digital gas flowmeter 9, sieve to shake Dynamic frequency control mechanism 14, sieve vibration frequency control motor 15, sieve vibration amplitude control mechanism 16, numerical control system tool There is computer 18 to be manipulated by touch screen.Lifting speed control mechanism 2, digital gas flowmeter 9, sieve vibration frequency control mechanism 14 and sieve vibration amplitude control mechanism 16 by encoder and software, realize data and the both-way communication of computer 18.Pass through The growthing process parameters such as lifting speed, feeding speed, the temperature field of touch screen and computer input data instruction control crystal growth, Control growth course;By touch screen and computer in real time to the real time monitoring of growth course technological parameter;Technological parameter is carried out Storage is called, for crystal growth new varieties, the exploitation of new process.
Using the crystal that is grown of numerical control crystal growing furnace of the present invention, for speed of growth stability contorting in 6mm/h, crystal is complete Whole property is fine.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all essences in the present invention All any modification, equivalent and improvement made within refreshing and principle etc., should all be included in the protection scope of the present invention.

Claims (8)

1. a kind of flame melt method numerical control crystal growing furnace, which is characterized in that the growth furnace includes:
Crystal growth system including crystal growing furnace, is penetrated in crystal growing furnace, for the crystal of the carrier as crystal growth Pedestal bar is grown, turn-screw is driven to be transferred to the lifting speed control that quartz crystal grows pedestal bar and moves up and down by motor Mechanism processed;
Material supply system including taper raw material cabin, sets sieve, the feed inlet installation of the raw material cabin in the raw material cabin There is sieve vibrating mechanism;
Fuel system is connected to growth room by pipeline;
Numerical control system, to lifting speed control mechanism, sieve vibration amplitude control mechanism, sieve vibration frequency control mechanism And gas handling system sends out control signal, and for setting control parameter.
2. flame melt method numerical control crystal growing furnace described in accordance with the claim 1, which is characterized in that the fuel system includes Fuel gas source and fuel gas pipeline, float gas flowmeter, digital gas flowmeter, fuel gas control mechanism;Fuel Gas source is connected to crystal growing furnace by fuel gas pipeline, float gas flowmeter is set to be used on fuel gas pipeline Signal piping gas station, for accurately controlling the flow of gas, fuel gas control mechanism leads to setting digital gas flowmeter It crosses and seals in the dehumidifying, dry of fuel gas pipeline, cleaning equipment, the cleaning of technological requirement is met to the offer of digital gas flowmeter Gas.
3. flame melt method numerical control crystal growing furnace described in accordance with the claim 1, which is characterized in that Material supply system includes:
Sieve vibration amplitude control mechanism, adjusting of the control sieve vibrating mechanism to the vibration amplitude of sieve;
Sieve vibration frequency control mechanism, adjusting of the control sieve vibrating mechanism to the vibration frequency of sieve.
4. flame melt method numerical control crystal growing furnace described in accordance with the claim 3, which is characterized in that the sieve vibration amplitude control Mechanism includes the interior empty support column I parallel with crystal growth pedestal bar, and connecting rod, the company are provided in the support column I Extension bar drives the lifting of connecting rod by motor, and the end of the connecting rod connects a cross bar, one end connection sieve of the cross bar Net vibrating mechanism.
5. according to the flame melt method numerical control crystal growing furnace described in claim 4, which is characterized in that the sieve vibration frequency control Mechanism exports horizontal axis by motor, on transverse axis at least a piece of compression bar, and horizontal axis drives compression bar rotation, the compression bar and the cross bar Contact.
6. according to the flame melt method numerical control crystal growing furnace described in claim 5, which is characterized in that the sieve vibration frequency control The motor of mechanism is fixed on the support column II parallel with support column I.
7. according to the flame melt method numerical control crystal growing furnace described in claim 4, which is characterized in that the crystal growing furnace and original Material supply system is fixed on the periphery of support column I.
8. according to the flame melt method numerical control crystal growing furnace described in claim 4, which is characterized in that the numerical control system passes through The amplitude and frequency of sieve vibration amplitude control mechanism and sieve vibration frequency control mechanism controls sieve reach the control of charging System.
CN201721611398.8U 2017-11-28 2017-11-28 A kind of flame melt method numerical control crystal growing furnace Active CN207537594U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201721611398.8U CN207537594U (en) 2017-11-28 2017-11-28 A kind of flame melt method numerical control crystal growing furnace

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201721611398.8U CN207537594U (en) 2017-11-28 2017-11-28 A kind of flame melt method numerical control crystal growing furnace

Publications (1)

Publication Number Publication Date
CN207537594U true CN207537594U (en) 2018-06-26

Family

ID=62615437

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201721611398.8U Active CN207537594U (en) 2017-11-28 2017-11-28 A kind of flame melt method numerical control crystal growing furnace

Country Status (1)

Country Link
CN (1) CN207537594U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107829133A (en) * 2017-11-28 2018-03-23 沈阳工程学院 A kind of flame melt method numerical control crystal growing furnace

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107829133A (en) * 2017-11-28 2018-03-23 沈阳工程学院 A kind of flame melt method numerical control crystal growing furnace

Similar Documents

Publication Publication Date Title
CN107829133A (en) A kind of flame melt method numerical control crystal growing furnace
CN100335683C (en) Method for preparing large-size artificial optical quartz crystal by hydrothermal method
CN207537594U (en) A kind of flame melt method numerical control crystal growing furnace
CN103911662A (en) Manufacturing method for langasite piezoelectric crystal and product thereof
CN109183140A (en) Single crystal growing furnace and its continuous feeding
CN101029417A (en) Class-1 piezoelectric monocrystal
JPS62171939A (en) Apparatus for production of porous optical fiber preform
WO2000023385A1 (en) Porous glass base material production device and method
CN103147119A (en) Preparation method and growth equipment of magnesium fluoride crystal
CN101481207A (en) Apparatus for manufacturing optical fiber preform part
CN101575215A (en) Hydro-thermal synthesis method of potassium niobate powder
CN208071841U (en) A kind of modular composite crystal preparation system
CN114875473B (en) Crystal preparation method for improving KGW crystal quality and utilization rate
CN109161960B (en) Numerical control crystal growth furnace by plasma method
CN1196816C (en) Gallium-lanthanum silicate crystal growth technology of crucible descending process
CN111153590B (en) Germanium tetrachloride tympanic bulla device of high accuracy
CN115044885A (en) MPCVD device and method for preparing high-purity CVD diamond wafer
JP4392670B2 (en) Manufacturing method of high purity silicon
CN210065808U (en) Automatic reinforced decoloration device
CN1213176C (en) Bridgman growth method for gallium strontium germanate piezoelectric crystal
CN115010352B (en) Deposition device and method for high-uniformity quartz bar
Földvári et al. Comments on the gas-bubble entrapment in TeO2 single crystals
CN1584131A (en) System and method for growth of lithium niobate crystal with rough chemical ratio by melt injection process
CN217418862U (en) Continuous straight pulling single crystal device
CN2568651Y (en) Device for controlling airflow stabilizing of optical fiber legging procedue

Legal Events

Date Code Title Description
GR01 Patent grant
GR01 Patent grant
TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20181010

Address after: 110000 Shenbei Road, Shenbei New Area, Shenyang, Liaoning 49

Patentee after: Shenyang sunrise Crystal Technology Co., Ltd.

Address before: 110136 Pu Chang Road, Shenbei New Area, Shenyang, Liaoning Province, No. 18

Patentee before: Shenyang Engineering College

TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20201231

Address after: No.18, Puchang Road, Shenbei New District, Shenyang, Liaoning Province, 110000

Patentee after: SHENYANG INSTITUTE OF ENGINEERING

Address before: 110000 Shenbei Road, Shenbei New Area, Shenyang, Liaoning 49

Patentee before: Shenyang sunrise Crystal Technology Co.,Ltd.

TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20210219

Address after: Room 453, F7, Shenyang International Software Park, 860-2, shangshengou village, Hunnan District, Shenyang City, Liaoning Province

Patentee after: Shenyang Xinpu Crystal Technology Co., Ltd

Address before: No.18, Puchang Road, Shenbei New District, Shenyang, Liaoning Province, 110000

Patentee before: SHENYANG INSTITUTE OF ENGINEERING