CN107819448A - Frequency-adjustable surface acoustic wave resonator - Google Patents
Frequency-adjustable surface acoustic wave resonator Download PDFInfo
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- CN107819448A CN107819448A CN201710897205.8A CN201710897205A CN107819448A CN 107819448 A CN107819448 A CN 107819448A CN 201710897205 A CN201710897205 A CN 201710897205A CN 107819448 A CN107819448 A CN 107819448A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02614—Treatment of substrates, e.g. curved, spherical, cylindrical substrates ensuring closed round-about circuits for the acoustical waves
Abstract
The present invention discloses a kind of frequency-adjustable surface acoustic wave resonator, including piezoelectric substrate (1), the structured metal layer being superimposed on successively on piezoelectric substrate (1), middle dielectric layer and regulating and controlling voltage electrode layer；The structured metal layer includes interdigital transducer (2), the first short-circuiting reflection battle array (31) and the second short-circuiting reflection battle array (32) of the interdigital transducer that is placed in (2) both sides；The interdigital transducer (2) of the structured metal layer is connected by high frequency input electrode (41) and high frequency output electrode (42) with external circuitry, it is grounded by DC earthing electrode (45), it is connected by direct current biasing electrode (44) with adjusting the DC bias supplies of resonant frequency, the first short-circuiting reflection battle array (31) and the second short-circuiting reflection battle array (32) are grounded by respective high frequency earthing electrode (43) and DC earthing electrode (45).The frequency-adjustable surface acoustic wave resonator of the present invention, frequency flexible adjustment, conveniently.
Description
Technical field
The invention belongs to micro-electro-mechanical resonator technical field, particularly a kind of frequency flexible adjustment, convenient frequency-adjustable
SAW resonator.
Background technology
SAW resonator forms resonator by two reflective arrays being produced on piezoelectric substrate, is placed in resonator and fits
When the surface acoustic wave that the interdigital transducer of position is excited between two reflective arrays roundtrip, and form standing wave and export humorous
Shake signal.The resonant frequency of resonance signal is decided by the material parameter of piezoelectric substrate, interdigital transducer interdigital electrode and reflective array
The structural parameters and material parameter of reflecting electrode, and the electric loading and mass loading effect thereby determined that, have frequency range
Wide, the advantages that frequency stability is good.But then, because its resonant frequency depends mainly on the knot relevant with design and processes
Structure and material parameter, it is not easy to carry out the regulation and control of resonant frequency.
In the prior art, the method being finely adjusted to SAW resonator resonant frequency has：
(1) deielectric-coating is covered on SAW resonator interdigital transducer and reflective array structure, changes surface acoustic wave ripple
Speed, adjust resonant frequency (the Frequency Trimming of Surface Transverse Wave of SAW resonator
Resonators Using Resistive Evaporation of Thin SiO2 Dielectric Film,1998 IEEE
International Frequency Control Symposium,pp.497-501)；
(2) etch interdigital transducer and reflective array refers to interelectrode piezoelectric substrate surface, make to form recessed groove, change
Refer to the reflectivity of structure and the velocity of wave of surface acoustic wave, adjust the resonant frequency (Frequency of SAW resonator
Trimming of SAW Resonators,IEEE Transactions on Sonic and Ultrasonics,Vol.
SU-29,No.6,July 1982,pp.231-234)；
(3) the SAW resonator chip for completing interdigital transducer and reflective array metal finger electrode fabrication is immersed into corrosion
Liquid mild or moderate rinses, and reduces the shoulder height of metal finger electrode, change refers to structure reflectivity and surface acoustic wave velocity of wave, so as to finely tune
Resonant frequency (Frequency Trimming of the SAW Devices, 1994 Ultrasonics of SAW resonator
Symposium,pp.181-187)。
But above method belongs to manufacturability adjustment, and adjustment process is irreversible, and (2) method is easily produced to metal finger simultaneously
The damage of electrode, the method corrosive liquid that (3) middle possibility remains may proceed to attack metal and refer to electrode structure, make SAW resonator
Resonant frequency produce unexpected drift.
In a word, the problem of prior art is present be：The resonant frequency regulation of SAW resonator is dumb, inconvenient.
The content of the invention
It is an object of the invention to provide a kind of frequency-adjustable surface acoustic wave resonator, frequency flexible adjustment, conveniently.
The technical solution for realizing the object of the invention is：
A kind of frequency-adjustable surface acoustic wave resonator, including piezoelectric substrate 1, the gold that is superimposed on successively on piezoelectric substrate 1
Belong to structure sheaf, middle dielectric layer and regulating and controlling voltage electrode layer；
The structured metal layer includes interdigital transducer 2, the first short-circuiting reflection battle array 31 of the both sides of interdigital transducer 2 that are placed in
With the second short-circuiting reflection battle array 32；
The middle dielectric layer includes the first middle dielectric layer 51, the second middle dielectric layer 52 and the 3rd middle dielectric layer
53, first middle dielectric layer 51 be superimposed on interdigital transducer 2 and with the similar shape of interdigital transducer 2, among described second
Dielectric layer 52 be superimposed on the first short-circuiting reflection battle array 31 and with the similar shape of the first short-circuiting reflection battle array 31, the 3rd middle dielectric layer
53 be superimposed on the second short-circuiting reflection battle array 32 and with the similar shape of the second short-circuiting reflection battle array 32；
The regulating and controlling voltage electrode layer includes first voltage regulation and control electrode layer 61, second voltage regulation and control electrode layer 62 and the 3rd
Regulating and controlling voltage electrode layer 63, first voltage regulation and control electrode layer 61 be superimposed on the first middle dielectric layer 51 and with first
Between the similar shape of dielectric layer 51, second voltage regulation and control electrode layer 62 be superimposed on the second middle dielectric layer 52 and with second among
The similar shape of dielectric layer 52, the tertiary voltage regulation and control electrode layer 63 are superimposed on the 3rd middle dielectric layer 53 and are situated between with the 3rd centre
The similar shape of matter layer 53；
Also include multiple gap bridges 7 that upper strata is metal, lower floor is medium, the multiple gap bridge 7 passes through its upper strata metal 72
Three regulating and controlling voltage electrode layers 61,62,63 of regulating and controlling voltage electrode layer are connected, by layer dielectric 71 by structured metal layer
Interdigital transducer 2 is isolated with the first short-circuiting reflection battle array 31, the second short-circuiting reflection battle array 32；
The interdigital transducer 2 of the structured metal layer passes through high frequency input electrode 41 and high frequency output electrode 42 and external world's electricity
Road is connected, and is grounded by DC earthing electrode 45, passes through direct current biasing electrode 44 and the DC bias supplies of regulation resonant frequency
It is connected,
The first short-circuiting reflection battle array 31 and the second short-circuiting reflection battle array 32 are by respective high frequency earthing electrode 43 and directly
Stream grounding electrode 45 is grounded.
Compared with prior art, its remarkable advantage is the present invention：
1st, frequency flexible adjustment, conveniently：The present invention changes electricity by applying DC offset voltage between upper lower metal layer
Active force between pressure regulation and control electrode layer, middle dielectric layer and SAW resonator structured metal layer, and then change sound surface
Interdigital electrode and reflection refer to the equivalent mass load of electrode in wave resonator structured metal layer, so as to change SAW resonator
Resonance characteristic, the final resonant frequency for changing SAW resonator, the applied DC offset voltage of regulation, you can regulation and control
The resonant frequency of SAW resonator, can be achieved that SAW resonator resonant frequency is repeatable, real-time and online regulation and control, frequently
Rate flexible adjustment, conveniently；
2nd, it is easily achieved：Made using the method for processing microstructure of routine, technique is simple, it is easy to accomplish.
The present invention is described in further detail with reference to the accompanying drawings and detailed description.
Brief description of the drawings
Fig. 1 is the general structure schematic diagram of frequency-adjustable surface acoustic wave resonator of the present invention.
Fig. 2 is Fig. 1 A-A sectional views；
Fig. 3 is fabric schematic diagram in Fig. 1, including SAW resonator structured metal layer, high frequency input electrode, height
Frequency output electrode, high frequency earthing electrode, direct current biasing electrode and DC earthing electrode；
Fig. 4 is interlayer structure schematic diagram in Fig. 1, including middle dielectric layer, gap bridge top dielectric；
Fig. 5 is top level structure schematic diagram in Fig. 1, including regulating and controlling voltage electrode layer, gap bridge lower metal；
Fig. 6 is to connect schematic diagram, including frequency-adjustable sound surface outside frequency-adjustable surface acoustic wave resonator chip in embodiment
The outer high frequency input electrode of wave resonator chip, piece, the outer high frequency output electrode of piece, the outer high frequency earthing electrode of piece, the outer DC earthing of piece
Electrode, bonding wire, high-frequency inductor；
Fig. 7 is embodiment medium-high frequency oscillating circuit structural representation, including frequency-adjustable surface acoustic wave resonator chip, anti-
Present the outer high frequency input port of amplifying circuit, phase-shift network, piece, the outer high frequency output port of piece, the outer direct current biasing input port of piece, piece
Outer adjustable DC power supply；
In figure：1 piezoelectric substrate, 2 interdigital transducers, 21 input bus electrodes, 22 output bus electrodes, 23 the 1st groups it is interdigital
Electrode, 24 the 2nd groups of interdigital electrodes,
31 first short-circuiting reflection battle arrays, 32 second short-circuiting reflection battle arrays, 311 first ground connection bus electrodes, 312 second ground connection are confluxed
Electrode, 313 the 1st groups of reflections refer to electrode, 321 the 3rd ground connection bus electrodes, 322 the 4th ground connection bus electrodes, 323 the 2nd groups of reflections
Finger electrode,
41 high frequency input electrodes, 42 high frequency output electrodes, 43 high frequency earthing electrodes, 44 direct current biasing electrodes, 45 direct currents connect
Ground electrode,
51 first middle dielectric layers, 52 second middle dielectric layers, 53 the 3rd middle dielectric layers,
61 first voltages regulation and control electrode layer, 62 second voltages regulate and control electrode layer, 63 tertiary voltages regulate and control electrode layer,
7 gap bridges, 71 gap bridge top dielectrics, 72 gap bridge lower metals,
81 outer high frequency input electrodes, 82 outer high frequency output electrodes, 83 outer high frequency earthing electrodes, 84 outer direct currents connect
Ground electrode,
91 outer high frequency input ports, 92 outer high frequency output ports, 93 outer direct current biasing input ports,
10th, bonding wire, 11, high-frequency inductor, 12 feedback amplifiers, 13 phase-shift networks,
14 outer adjustable DC power supplys, 141 outer adjustable DC power positive end electrodes, 142 outer adjustable DC power supplys connect
Ground termination electrode.
Embodiment
As shown in Figure 1, 2, frequency-adjustable surface acoustic wave resonator of the present invention, including piezoelectric substrate 1, piezoelectricity is superimposed on successively
Structured metal layer, middle dielectric layer and regulating and controlling voltage electrode layer on substrate 1；
As shown in figure 3, the structured metal layer includes interdigital transducer 2, the first of the both sides of interdigital transducer 2 that are placed in short
The short-circuiting reflection battle array 32 of road reflective array 31 and second；
As shown in figure 4, the middle dielectric layer is included in the first middle dielectric layer 51, the second middle dielectric layer 52 and the 3rd
Between dielectric layer 53, first middle dielectric layer 51 be superimposed on interdigital transducer 2 and with the similar shape of interdigital transducer 2, it is described
Second middle dielectric layer 52 be superimposed on the first short-circuiting reflection battle array 31 and with the similar shape of the first short-circuiting reflection battle array 31, in the described 3rd
Between dielectric layer 53 be superimposed on the second short-circuiting reflection battle array 32 and with the similar shape of the second short-circuiting reflection battle array 32；
As shown in figure 5, the regulating and controlling voltage electrode layer includes first voltage regulation and control electrode layer 61, second voltage regulation and control electrode
Layer 62 and tertiary voltage regulation and control electrode layer 63, first voltage regulation and control electrode layer 61 be superimposed on the first middle dielectric layer 51 it
Above and with the similar shape of the first middle dielectric layer 51, the second voltage regulation and control electrode layer 62 it is superimposed on the second middle dielectric layer 52
And with the similar shape of the second middle dielectric layer 52, tertiary voltage regulation and control electrode layer 63 be superimposed on the 3rd middle dielectric layer 53 and
With the similar shape of the 3rd middle dielectric layer 53；
As shown in Fig. 2 also including multiple gap bridges 7 that upper strata is metal, lower floor is medium, the multiple gap bridge 7 passes through it
Upper strata metal 72 connects three regulating and controlling voltage electrode layers 61,62,63 of regulating and controlling voltage electrode layer, by layer dielectric 71 by gold
The interdigital transducer 2 of category structure sheaf is isolated with the first short-circuiting reflection battle array 31, the second short-circuiting reflection battle array 32；
As shown in figure 1,
The interdigital transducer 2 of the structured metal layer passes through high frequency input electrode 41 and high frequency output electrode 42 and external world's electricity
Road is connected, and is grounded by DC earthing electrode 45, passes through direct current biasing electrode 44 and adjustable DC outside the piece of regulation resonant frequency
Power supply 14 is connected,
The first short-circuiting reflection battle array 31 and the second short-circuiting reflection battle array 32 are by respective high frequency earthing electrode 43 and directly
Stream grounding electrode 45 is grounded.
As shown in figure 3,
The interdigital transducer 2 includes input bus electrode 21, output bus electrode 22, the 1st group of interdigital electrode 23 and the 2nd
Group interdigital electrode 24, the input bus electrode 21 is relative with output bus electrode 22 to be placed in parallel, the 1st group of interdigital electricity
One end of pole 23 comes together in input bus electrode 21, and the other end points to output bus electrode 22, the 2nd group of interdigital electrode 24
One end comes together in output bus electrode 22 other end and points to input bus electrode 21, the 1st group of interdigital electrode 23 and the 2nd group of interdigital electricity
Each finger electrode of pole 24 is staggered；
The upside of the input bus electrode 21 is connected with a high frequency input electrode 41 and a direct current grounding electrode 45 respectively,
The downside of output bus electrode 22 is connected with a high frequency output electrode 42 and a direct current grounding electrode 45 respectively, inputs bus electrode
21 upside and the downside of output bus electrode 22 are respectively provided with a direct current bias electrode 44, the direct current biasing electrode 44 and input
Gap be present between bus electrode 21 and output bus electrode 22.
As shown in figure 3,
The first short-circuiting reflection battle array 31 includes the first ground connection bus electrode 311, second and is grounded bus electrode 312 and the 1st
Group reflection refers to electrode 313, and the first ground connection bus electrode 311, second is grounded bus electrode 312 and is placed in parallel relatively, described
1st group of reflection refers to the one end of electrode 313 and comes together in the first ground connection bus electrode 311, and the other end is collected to the second ground connection bus electrode
312；
The second short-circuiting reflection battle array 32 includes the 3rd ground connection bus electrode the 321, the 4th and is grounded bus electrode 322 and the 2nd
Group reflection refers to electrode 323, and the 3rd ground connection bus electrode the 321, the 4th is grounded bus electrode 322 and is placed in parallel relatively, described
2nd group of reflection refers to the one end of electrode 323 and comes together in the 3rd ground connection bus electrode 321, and the other end is collected to the 4th ground connection bus electrode
322；
The upper right side of the first ground connection bus electrode 311 and left end are respectively connected with a high frequency earthing electrode 43, and described the
The left end of two ground connection bus electrodes 312 is connected with a high frequency earthing electrode 43, its lower right side and the phase of a direct current grounding electrode 45
Even；
The right-hand member of the 3rd ground connection bus electrode 321 is connected with a high frequency earthing electrode 43, its upper left side and a direct current
Grounding electrode 45 be connected, it is described 4th ground connection bus electrode 322 lower left side and right-hand member respectively with the phase of a high frequency earthing electrode 43
Even；
As shown in figure 1,
Described pass a bridge 7 is four, respectively positioned at including the input both ends of bus electrode 21 and the first ground connection bus electrode 311, the
Between three ground connection bus electrodes 321, and the output both ends of bus electrode 22 are converged with the second ground connection ground connection of bus electrode the 312, the 4th
Between flowing electrode 322,
As shown in Fig. 2
The thickness of upper strata metal 72 of each gap bridge 7 is equal with the thickness of regulating and controlling voltage electrode layer, its thickness of layer dielectric 71
For structured metal layer and interlayer dielectric thickness sum, its bottom is attached on piezoelectric substrate 1, its top and regulating and controlling voltage electricity
Along concordant on the layer of pole, first voltage is regulated and controled electrode layer 61 and regulates and controls electrode layer 62 and the with second voltage respectively by upper strata metal 72
Three regulating and controlling voltage electrode layers 63 turn on.
The operation principle of the present invention is as follows：
Fig. 6 is shown in the specific embodiment of the present invention connects schematic diagram, including frequency-adjustable surface acoustic wave resonance outside structure
The outer high frequency input electrode 81 of device chip, piece, the outer high frequency output electrode 82 of piece, the outer high frequency earthing electrode 83 of piece, the outer DC earthing of piece
Electrode 84, bonding wire 10, high-frequency inductor 11.
High frequency input electrode 41 and high frequency earthing electrode 43 on chip form high frequency input port, high frequency output electrode 42
High frequency output port is formed with high frequency earthing electrode 43, direct current biasing electrode 44 forms direct current regulation and control electricity with DC earthing electrode 45
Press input port.
High frequency input port and high frequency output port of the present invention by the frequency-adjustable surface acoustic wave resonator chip
SAW resonator chip and Off-chip test system are connected, detects the resonant frequency of SAW resonator；
From the direct current regulation and control control source port input direct-current biased electrical of the frequency-adjustable surface acoustic wave resonator chip
Pressure, and be applied between SAW resonator structured metal layer and regulating and controlling voltage electrode layer；
The size of above-mentioned applied DC offset voltage is adjusted, changes regulating and controlling voltage electrode layer, middle dielectric layer and sound
Active force between surface resonator structured metal layer, so as to change interdigital electrode in SAW resonator structured metal layer
Refer to the equivalent mass load of electrode with reflection, regulate and control the resonant frequency of SAW resonator.
Regulating and controlling voltage electrode layer and direct current biasing electrode 44 are connected by the way of wire bonding or welding lead, and even
Connect direct current biasing electrode 44 and the outer adjustable DC power positive end electrode 141 of piece；
When using wire bonding mode outside chip connect, it is each SAW resonator structured metal layer will to be corresponded to
The outer DC earthing electrode 84 of partial DC earthing electrode 45 piece corresponding with piece external circuit is connected, and the high frequency for passing through concatenation
Inductance 11 is by each outer DC earthing electrode 84 and the phase of adjustable DC power ground termination electrode 142 outside the piece in piece external circuit
Even, make the various pieces DC interconnection and DC earthing of SAW resonator structured metal layer, and make SAW resonator
The mutual high-frequency isolation of various pieces of structured metal layer；
Or when using welding lead mode outside chip connect, sound table will be corresponded to by the high-frequency inductor 11 of concatenation
The DC earthing electrode 45 of face wave resonator structured metal layer various pieces connects with the outer adjustable DC power supply of the piece in piece external circuit
Ground termination electrode 142 is connected, and makes the various pieces DC interconnection and DC earthing of SAW resonator structured metal layer, and makes sound
The mutual high-frequency isolation of various pieces of surface resonator structured metal layer；
Control source port input direct-current bias voltage is regulated and controled by direct current using adjustable DC power supply 14 outside piece, and applied
Between SAW resonator structured metal layer and regulating and controlling voltage electrode layer, change regulating and controlling voltage electrode layer, the centre of top layer
Active force between dielectric layer and the SAW resonator structured metal layer of bottom, that is, change SAW resonator metal
Interdigital electrode and reflection refer to the equivalent mass load of electrode in structure sheaf, so as to change the surface acoustic wave resonance including resonant frequency
Device resonance characteristic, realize regulation and control or correction to SAW resonator resonant frequency.
SAW resonator in the present invention is one-port saw resonator, or both-end is to surface acoustic wave resonance
Device.
Further, can be by high frequency output port and high frequency input port by said frequencies adjustable surface acoustic wave resonance
Device chip is connected with piece external feedback amplifying circuit 12 and phase-shift network 13, forms high-frequency oscillating circuits, and high-frequency oscillating circuits produces
Its frequency high-frequency oscillation signal consistent with SAW resonator resonant frequency, the applied DC offset voltage of regulation, i.e.,
The frequency of high-frequency oscillation signal caused by controllable high-frequency oscillating circuits；
The present invention regulates and controls control source port by direct current using the outer adjustable DC power supply 14 of piece and applies DC offset voltage,
SAW resonator resonant frequency is regulated and controled, or it is defeated from direct current regulation and control voltage using related device, circuit or device
Inbound port inputs controllable DC offset voltage, and SAW resonator resonant frequency is regulated and controled；
Further, the physical quantity of required sensing can be converted into voltage, pass through direct current by specific sensing element
Regulation and control control source port is applied in the SAW resonator resonant frequency regulating and controlling voltage structure of the present invention, change sound surface
The resonant frequency of wave resonator, and according to sensed physical quantity and the dependency relation of SAW resonator resonant frequency, pass through
SAW resonator resonant frequency and its change are detected, it is determined that the size of sensed physical quantity and its change；
The material of piezoelectric substrate 1 used is ST single crystal quartzs or lithium niobate monocrystal in the present invention, SAW resonator
Structured metal layer, regulating and controlling voltage electrode layer, high frequency input electrode 41, high frequency output electrode 42, high frequency earthing electrode 43, direct current are inclined
The material for putting electrode 44, DC earthing electrode 45 and gap bridge lower metal 72 is aluminium, aluminium copper, copper or gold, intermediate medium
Layer and the material of gap bridge top dielectric 71 are silica or silicon nitride；
Regulating and controlling voltage electrode layer, high frequency input electrode 41, high frequency output electrode 42, high frequency earthing electrode in the present invention
43rd, the outer lead-out mode of direct current biasing electrode 44 and DC earthing electrode 45 is bonding wire or welding lead, bonding wire
Outer lead-out wire used is spun gold or Si-Al wire in mode.
Frequency-adjustable surface acoustic wave resonator chip of the present invention refers to following step and is made.
(1) the surface spin coating positive photoresist of ST single crystal quartzs substrate 1, front baking；
(2) expose and develop, it is defeated to remove SAW resonator structured metal layer to be made, high frequency input electrode 41, high frequency
The photoresist glued membrane gone out at electrode 42, high frequency earthing electrode 43, direct current biasing electrode 44 and DC earthing electrode 45；
(3) magnetron sputtering, aluminium coating tin-copper alloy film；
(4) remove photoresist, the aluminium copper film being covered in together with removal on photoresist glued membrane, complete SAW resonator metal
Structure sheaf, high frequency input electrode 41, high frequency output electrode 42, high frequency earthing electrode 43, direct current biasing electrode 44 and DC earthing
The making of electrode 45；
(5) said structure layer surface spin coating positive photoresist, front baking；
(6) expose and develop, remove the photoresist glued membrane at middle dielectric layer position；
(7) magnetron sputtering, silicon dioxide film is covered；
(8) remove photoresist, the silicon dioxide film being covered in together with removal on photoresist glued membrane, complete the making of middle dielectric layer；
(9) said structure layer surface spin coating positive photoresist, front baking；
(10) expose and develop, remove the photoresist glued membrane at regulating and controlling voltage electrode layer position；
(11) magnetron sputtering, aluminium coating tin-copper alloy film；
(12) remove photoresist, the aluminium copper film being covered in together with removal on photoresist glued membrane, complete regulating and controlling voltage electrode layer
Make；
(13) said structure layer surface spin coating positive photoresist, front baking；
(14) expose and develop, remove the photoresist glued membrane at the position of gap bridge top dielectric 71；
(15) magnetron sputtering, said structure layer surface covering silicon dioxide layer；
(16) remove photoresist, the silicon dioxide film being covered in together with removal on photoresist glued membrane, complete gap bridge top dielectric 71
Make；
(17) said structure layer surface spin coating positive photoresist, front baking；
(18) expose and develop, remove the photoresist glued membrane at the position of gap bridge lower metal 72；
(19) magnetron sputtering, said structure layer surface aluminium coating tin-copper alloy film；
(20) remove photoresist, the aluminium copper film being covered in together with removal on photoresist glued membrane, complete gap bridge lower metal 72
Make, so as to complete the making of frequency-adjustable surface acoustic wave resonator chip.
The application example of frequency-adjustable surface acoustic wave resonator of the present invention can refer to following methods.
(1) connect outside chip direct current
Using Si-Al wire bonding wire mode, the regulating and controlling voltage electrode layer in chip is connected simultaneously with direct current biasing electrode 44
Direct current biasing electrode 44 is connected with adjustable DC power positive end electrode 141 outside the piece in piece external circuit；
Using Si-Al wire bonding wire mode, by each DC earthing electrode 45 in chip respectively with it is right in piece external circuit
The outer DC earthing electrode 84 of the piece answered is connected, then by each outer DC earthing electrode 84 by the high-frequency inductor 11 of concatenation and
The outer adjustable DC power ground termination electrode 142 of piece in piece external circuit is connected, as shown in Figure 6.
(2) connect outside chip high frequency, form high-frequency oscillating circuits
Using Si-Al wire bonding wire mode, by the high-frequency signal output port in chip and high-frequency signal input port
High frequency output electrode 42, high frequency input electrode 41 and high frequency earthing electrode 43 respectively with piece external circuit outside piece high-frequency signal input
The outer high frequency input electrode 81 of piece, the outer high frequency output electrode 82 of piece and piece in port 91 and the outer high-frequency signal output port 92 of piece
Outer high frequency earthing electrode 83 is connected, then by high-frequency signal output port 92 outside high-frequency signal input port 91 outside piece and piece by sound
Surface resonator is connected with piece external feedback amplifying circuit 12 and phase-shift network 13, forms high-frequency oscillating circuits, as shown in Figure 7.
(3) regulation direct-current bias voltage is to regulate and control the resonant frequency of SAW resonator
The amplitude of the outer output voltage of adjustable DC power supply 14 of adjustment sheet, you can regulate and control the resonance frequency of SAW resonator
Rate, and then regulate and control the frequency of high-frequency oscillation signal caused by high-frequency oscillating circuits.
The present invention overlaps middle dielectric layer and regulating and controlling voltage electrode layer successively on SAW resonator structured metal layer,
A kind of three-layer composite structure of bottom metal layer-middle dielectric layer-bottom metal layer is formed, by being applied between upper lower metal layer
Add DC offset voltage, change between regulating and controlling voltage electrode layer, middle dielectric layer and SAW resonator structured metal layer
Active force, and then change the equivalent mass load that interdigital electrode and reflection in SAW resonator structured metal layer refer to electrode,
So as to change the resonance characteristic of SAW resonator, the final resonant frequency for changing SAW resonator, regulation is applied
DC offset voltage, you can regulate and control the resonant frequency of SAW resonator.The principle of the invention is unique, novel in design, can be real
Existing SAW resonator resonant frequency is repeatable, real-time and online regulation and control, easy to operation, is added using conventional micro-structural
Work method makes, and technique is simple, it is easy to accomplish.
Claims (4)
- A kind of 1. frequency-adjustable surface acoustic wave resonator, it is characterised in that：Adjusted including piezoelectric substrate (1), the structured metal layer being superimposed on successively on piezoelectric substrate (1), middle dielectric layer and voltage Control electrode layer；The structured metal layer includes interdigital transducer (2), the first short-circuiting reflection battle array of the interdigital transducer that is placed in (2) both sides And the second short-circuiting reflection battle array (32) (31)；The middle dielectric layer includes the first middle dielectric layer (51), the second middle dielectric layer (52) and the 3rd middle dielectric layer (53), first middle dielectric layer (51) be superimposed on interdigital transducer (2) and with interdigital transducer (2) similar shape, it is described Second middle dielectric layer (52) be superimposed on the first short-circuiting reflection battle array (31) and with first short-circuiting reflection battle array (31) similar shape, it is described 3rd middle dielectric layer (53) be superimposed on the second short-circuiting reflection battle array (32) and with second short-circuiting reflection battle array (32) similar shape；The regulating and controlling voltage electrode layer includes first voltage regulation and control electrode layer (61), second voltage regulation and control electrode layer (62) and the 3rd Regulating and controlling voltage electrode layer (63), first voltage regulation and control electrode layer (61) be superimposed on the first middle dielectric layer (51) and with First middle dielectric layer (51) similar shape, the second voltage regulation and control electrode layer (62) are superimposed on the second middle dielectric layer (52) And it is superimposed on the 3rd middle dielectric layer (53) with the second middle dielectric layer (52) similar shape, the tertiary voltage regulation and control electrode layer (63) On and with the 3rd middle dielectric layer (53) similar shape；Also include multiple gap bridges (7) that upper strata is metal, lower floor is medium, the multiple pass a bridge (7) pass through its upper strata metal (72) three regulating and controlling voltage electrode layers (61,62,63) of regulating and controlling voltage electrode layer are connected, by layer dielectric (71) by metal The interdigital transducer (2) of structure sheaf is isolated with the first short-circuiting reflection battle array (31), the second short-circuiting reflection battle array (32)；The interdigital transducer (2) of the structured metal layer passes through high frequency input electrode (41) and high frequency output electrode (42) and the external world Circuit is connected, and is grounded by DC earthing electrode (45), inclined by direct current biasing electrode (44) and the direct current of regulation resonant frequency Power supply is put to be connected,The first short-circuiting reflection battle array (31) and the second short-circuiting reflection battle array (32) by respective high frequency earthing electrode (43) and DC earthing electrode (45) is grounded.
- 2. SAW resonator according to claim 1, it is characterised in that：The interdigital transducer (2) includes input bus electrode (21), output bus electrode (22), the 1st group of interdigital electrode (23) With the 2nd group of interdigital electrode (24), the input bus electrode (21) with output bus electrode (22) with respect to being placed in parallel, described the One end of 1 group of interdigital electrode (23) comes together in input bus electrode (21), and the other end points to output bus electrode (22), and described the 2 groups of interdigital electrode (24) one end come together in output bus electrode (22) other end and point to input bus electrode (21), and the 1st group interdigital Electrode (23) and each finger electrode of the 2nd group of interdigital electrode (24) are staggered；It is described input bus electrode (21) upside respectively with a high frequency input electrode (41) and direct current grounding electrode (45) phase Even, the downside of output bus electrode (22) is connected with a high frequency output electrode (42) and a direct current grounding electrode (45) respectively, defeated Enter and be respectively provided with a direct current bias electrode (44), the direct current on the downside of the upside and output bus electrode (22) of bus electrode (21) Gap be present between bias electrode (44) and input bus electrode (21) and output bus electrode (22).
- 3. SAW resonator according to claim 2, it is characterised in that：The first short-circuiting reflection battle array (31) includes the first ground connection bus electrode (311), the second ground connection bus electrode (312) and the 1 group of reflection refers to electrode (313), and the first ground connection bus electrode (311), the second ground connection bus electrode (312) is relatively parallel puts Put, the 1st group of reflection refers to electrode (313) one end and come together in the first ground connection bus electrode (311), and the other end is collected to second and connect Ground bus electrode (312)；The second short-circuiting reflection battle array (32) includes the 3rd ground connection bus electrode (321), the 4th ground connection bus electrode (322) and the 2 groups of reflections refer to electrode (323), and the 3rd ground connection bus electrode (321), the 4th ground connection bus electrode (322) is relatively parallel puts Put, the 2nd group of reflection refers to electrode (323) one end and come together in the 3rd ground connection bus electrode (321), and the other end is collected to the 4th and connect Ground bus electrode (322)；The upper right side of the first ground connection bus electrode (311) and left end are respectively connected with a high frequency earthing electrode (43), and described the The left end of two ground connection bus electrodes (312) is connected with a high frequency earthing electrode (43), its lower right side and a direct current grounding electrode (45) it is connected；The right-hand member of the 3rd ground connection bus electrode (321) is connected with a high frequency earthing electrode (43), its upper left side and a direct current Grounding electrode (45) be connected, it is described 4th ground connection bus electrode (322) lower left side and right-hand member respectively with a high frequency earthing electrode (43) it is connected.
- 4. SAW resonator according to claim 3, it is characterised in that：Described pass a bridge (7) are four, respectively positioned at input bus electrode (21) both ends and the first ground connection bus electrode (311), the Between three ground connection bus electrodes (321), and output bus electrode (22) both ends and the second ground connection bus electrode (312), the 4th It is grounded between bus electrode (322),Upper strata metal (72) thickness of each gap bridge (7) is equal with the thickness of regulating and controlling voltage electrode layer, and its layer dielectric (71) is thick Spend and be attached to for structured metal layer and interlayer dielectric thickness sum, its bottom on piezoelectric substrate (1), its top is adjusted with voltage Control on electrode layer along concordant, first voltage is regulated and controled electrode layer (61) and regulates and controls electrode layer with second voltage respectively by upper strata metal (72) (62) turned on tertiary voltage regulation and control electrode layer (63).
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