CN107815726A - Guide shell is crystallized for monocrystalline silicon - Google Patents

Guide shell is crystallized for monocrystalline silicon Download PDF

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Publication number
CN107815726A
CN107815726A CN201711048696.5A CN201711048696A CN107815726A CN 107815726 A CN107815726 A CN 107815726A CN 201711048696 A CN201711048696 A CN 201711048696A CN 107815726 A CN107815726 A CN 107815726A
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CN
China
Prior art keywords
flow guiding
external flow
intermediate layer
guiding cylinder
cylinder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201711048696.5A
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Chinese (zh)
Inventor
施小红
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Yangzhong Huifeng Packing Co Ltd
Original Assignee
Yangzhong Huifeng Packing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yangzhong Huifeng Packing Co Ltd filed Critical Yangzhong Huifeng Packing Co Ltd
Priority to CN201711048696.5A priority Critical patent/CN107815726A/en
Publication of CN107815726A publication Critical patent/CN107815726A/en
Pending legal-status Critical Current

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Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02Elements
    • C30B29/06Silicon

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

The invention discloses one kind to be used for monocrystalline silicon crystallization guide shell, including external flow guiding cylinder, intermediate layer, counterbore and inner draft tube, it is characterized in that, the external flow guiding cylinder is the tapered cylinder of a flanged disk, 4 counterbores are machined with external flow guiding cylinder top surface, external flow guiding cylinder bottom centre position is machined with taper hole, there is a round boss on taper hole top, the intermediate layer is tapered cylinder, material is Carboplatin, intermediate layer thickness is 2mm, the intermediate layer is arranged in external flow guiding cylinder endoporus, the inner draft tube is tapered cylinder, material is carbon felt, inner draft tube thickness is 7~8 layers, the inner draft tube is arranged in the endoporus of intermediate layer.The present invention is simple in construction, vdiverse in function, reduces cost, also improves the performance of enterprises.

Description

Guide shell is crystallized for monocrystalline silicon
Technical field
The present invention relates to solar-photovoltaic technology field, more particularly to a kind of monocrystalline silicon that is used for crystallize guide shell.
Background technology
Often occur in production process, turn round rod or easily disconnected bud during isometrical, what is easily crystallized during ending generally asks Topic, this problem have had a strong impact on production efficiency and yield rate.
The content of the invention
According to the above deficiency, the present invention provides a kind of furnace pressure simple in construction, stable and time saving is used for monocrystalline silicon knot Brilliant guide shell.
To achieve the above object, the present invention is used for monocrystalline silicon crystallization guide shell, and main contents are:Including external flow guiding cylinder, in Interbed, counterbore and inner draft tube, it is characterised in that the external flow guiding cylinder be a flanged disk tapered cylinder, external flow guiding cylinder top 4 counterbores are machined with face, external flow guiding cylinder bottom centre position is machined with taper hole, and there is a round boss on taper hole top, in described Interbed is tapered cylinder, and material is Carboplatin, and intermediate layer thickness 2mm, the intermediate layer is arranged in external flow guiding cylinder endoporus, described Inner draft tube is tapered cylinder, and material is carbon felt, and inner draft tube thickness is 7~8 layers, and the inner draft tube is arranged in intermediate layer Kong Li.
Preferably, the external flow guiding cylinder material is graphite carbon felt.
Preferably, scribble bonding agent between the external flow guiding cylinder and intermediate layer;Between the intermediate layer and inner draft tube Scribble bonding agent.
The invention has the advantages that:Make the thermoisopleth in crystal more flat, liquid-solid boundary during superficial growth is closer Planar interface, advantageously reduce the thermal stress in crystal and obtain uniform solute segregation, be advantageous to crystal growth;Reduce heating Baking of the device to crystal, effectively prevent heat loss of the heater to top, thus reduce heater power, saved into This;Make the speed of crystallization reduce, in-furnace temperature continuation length, can effectively avoid melt undercooling, be advantageous to the ending of crystal bar, make position Wrong probability is reduced, and improves the efficiency of product;Pulling rate is improved, shortens the isometrical time;Make operative employee be easy to manipulate, eliminate and received in the past The feared state of mind of tail.
Brief description of the drawings
Fig. 1 is schematic structural view of the invention.
Description of reference numerals:
1- external flow guiding cylinders, 2- intermediate layers, 3- counterbores, 4- inner draft tubes, 101- taper holes.
Embodiment
Below in conjunction with the accompanying drawings and embodiment describes the specific embodiment of the invention:
The system main contents are:Including external flow guiding cylinder 1, intermediate layer 2, counterbore 3 and inner draft tube 4, it is characterised in that institute The tapered cylinder that external flow guiding cylinder 1 is a flanged disk is stated, 4 counterbores 3, the bottom of external flow guiding cylinder 1 are machined with the top surface of external flow guiding cylinder 1 Center is machined with taper hole 101, and there is a round boss on the top of taper hole 101, and the intermediate layer 2 is tapered cylinder, and material is carbon Platinum, the thickness of intermediate layer 2 are 2mm, and the intermediate layer 2 is arranged in the endoporus of external flow guiding cylinder 1, and the inner draft tube 4 is tapered cylinder, Material is carbon felt, and the thickness of inner draft tube 4 is 8 layers, and the inner draft tube 4 is arranged in the endoporus of intermediate layer 2.
The material of external flow guiding cylinder 1 is graphite carbon felt.
Bonding agent is scribbled between the external flow guiding cylinder 1 and intermediate layer 2;Scribbled between the intermediate layer 2 and inner draft tube 4 viscous Connect agent.
The preferred embodiment for the present invention is explained in detail above in conjunction with accompanying drawing, but the invention is not restricted to above-mentioned implementation Mode, can also be on the premise of present inventive concept not be departed from those of ordinary skill in the art's possessed knowledge Make a variety of changes.
Many other changes and remodeling can be made by not departing from the spirit and scope of the present invention.It should be appreciated that the present invention is not It is limited to specific embodiment, the scope of the present invention is defined by the following claims.

Claims (5)

1. guide shell, including external flow guiding cylinder (1), intermediate layer (2), counterbore (3) and inner draft tube (4) are crystallized for monocrystalline silicon, its It is characterised by, the external flow guiding cylinder (1) is the tapered cylinder of a flanged disk, and 4 counterbores are machined with external flow guiding cylinder (1) top surface (3), external flow guiding cylinder (1) bottom centre position is machined with taper hole (101), and there are a round boss, the centre in taper hole (101) top Layer (2) is tapered cylinder, and material is Carboplatin, and intermediate layer (2) thickness is 2mm, and the intermediate layer (2) is arranged on external flow guiding cylinder (1) In endoporus, the inner draft tube (4) is tapered cylinder, and material is carbon felt, and inner draft tube (4) thickness is 7~8 layers, it is described in lead Flow cartridge (4) is arranged in intermediate layer (2) endoporus.
2. it is used for monocrystalline silicon crystallization guide shell as claimed in claim 1, it is characterised in that:External flow guiding cylinder (1) material is Graphite carbon felt.
3. it is used for monocrystalline silicon crystallization guide shell as claimed in claim 1, it is characterised in that:The external flow guiding cylinder (1) and centre Bonding agent is scribbled between layer (2).
4. it is used for monocrystalline silicon crystallization guide shell as claimed in claim 1, it is characterised in that:The intermediate layer (2) and Inner guide Bonding agent is scribbled between cylinder (4).
5. it is used for monocrystalline silicon crystallization guide shell as claimed in claim 1, it is characterised in that:Counterbore (3) major part is led outside Flow cartridge (1) ring flange bottom surface.
CN201711048696.5A 2017-10-31 2017-10-31 Guide shell is crystallized for monocrystalline silicon Pending CN107815726A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201711048696.5A CN107815726A (en) 2017-10-31 2017-10-31 Guide shell is crystallized for monocrystalline silicon

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201711048696.5A CN107815726A (en) 2017-10-31 2017-10-31 Guide shell is crystallized for monocrystalline silicon

Publications (1)

Publication Number Publication Date
CN107815726A true CN107815726A (en) 2018-03-20

Family

ID=61603445

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201711048696.5A Pending CN107815726A (en) 2017-10-31 2017-10-31 Guide shell is crystallized for monocrystalline silicon

Country Status (1)

Country Link
CN (1) CN107815726A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111270301A (en) * 2018-12-04 2020-06-12 上海新昇半导体科技有限公司 Guide cylinder of crystal growth furnace and crystal growth furnace

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN202214444U (en) * 2011-08-23 2012-05-09 开化县同欣硅业有限公司 Flow guiding cylinder
CN204111931U (en) * 2014-10-17 2015-01-21 包头市山晟新能源有限责任公司 Guide shell

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN202214444U (en) * 2011-08-23 2012-05-09 开化县同欣硅业有限公司 Flow guiding cylinder
CN204111931U (en) * 2014-10-17 2015-01-21 包头市山晟新能源有限责任公司 Guide shell

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111270301A (en) * 2018-12-04 2020-06-12 上海新昇半导体科技有限公司 Guide cylinder of crystal growth furnace and crystal growth furnace

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Application publication date: 20180320