CN107807708A

CN107807708A - The three crystal overcurrent protective A circuit voltages regulation chip of the low overpressure zone of throw load

Info

Publication number: CN107807708A
Application number: CN201711299629.0A
Authority: CN
Inventors: 杨明
Original assignee: Foshan China Micro Electric Technology Co Ltd
Current assignee: Foshan China Micro Electric Technology Co Ltd
Priority date: 2017-12-10
Filing date: 2017-12-10
Publication date: 2018-03-16

Abstract

A kind of three crystal overcurrent protective A circuit voltages regulation chip of the low overpressure zone of throw load, including：The first transistor Q1 grounded emitters, Q1 colelctor electrodes meet positive source B+ through resistance R1, and the colelctor electrode is also connected with third transistor Q3 grids and the input of energy storage delay unit 5；Transistor Q3 source grounds E, its connection second transistor Q2 colelctor electrode that drain, the output end of transistor Q2 base stages connection energy storage delay unit 5, the earth terminal ground connection of energy storage delay unit 5, transistor Q2 emitter stages connect transistor Q1 base stage by threshold adjustment unit 4, and transistor Q3 drain electrode is excitation end F；Sampling unit 7 connects positive source and ground, and its output end connects transistor Q1 base stage by reference cell 8, and afterflow unit 9 is connected between excitation end and B+；With chip circuit is simple, high pressure, has the advantages of overcurrent protection function, temperature tolerance are good, throw load overpressure zone is low, cost is low, wide adaptation range, high reliability.

Description

The three crystal overcurrent protective A circuit voltages regulation chip of the low overpressure zone of throw load

Technical field

The invention belongs to automobile current generator control technology field, it is related to three crystal overcurrent protectives of the low overpressure zone of throw load A circuit voltages adjust chip.

Background technology

Automobile current generator work in temperature become scope it is wide, by the high-temperature baking time is long, vibration is big, electromagnetic interference is larger, voltage Fluctuate among larger particular job environmental condition.

Wherein, the existing automobile current generator overwhelming majority is internal voltage regulater structure, it is desirable to which generator voltage is adjusted Device will also be adapted to above-mentioned more severe working environment, and in general electronic component and circuit are difficult to become scope in this temperature Greatly, long-term stable operation under the environment of high-temperature time length.Practice have shown that many voltage regulator electronic chips are in high temperature, big temperature Become under scope and the pernicious failures such as snap, power tube punctures, voltage is out of control occur, cause automobile current generator to generate electricity so that vehicle Cast anchor or regulatory function is out of control output voltage is significantly raised, even there is burning generator, breakdown computer board, infringement store The catastrophe failure such as battery and its distribution line.

Further, internal voltage regulater small volume, the circuit board space allowed by its regulator bracket is narrow and small, and one As under 2.5cmX3.5cm, be to the requirement of generator voltage controller number of elements it is more few better, therefore, many automobiles hair Motor employs the voltage regulator chip of the old circuit of tradition, only includes several transistors, several to more than ten electricity inside it The surface mount elements such as resistance, electric capacity, form thick film chip.But this simple thick film chip does not have overcurrent protection function, for automobile For generator, because the reason such as Exciting Windings for Transverse Differential Protection short circuit or the electric leakage of carbon brush powder causes exciting power pipe over-current phenomenon avoidance to be common again Technical problem, so that many voltage regulator exciting power pipes cause generator voltage out of control after puncturing due to excessively stream, want Solve the problems, such as overcurrent protection, existing way, first, complex current foldback circuit is used, but because element is more, electricity So multicomponent can not be born inside pressure adjuster；Second, comparator chip is used, but existing universal comparator or computing are put Big device chip tolerable temperature performance and resistance to back-pressure index can not meet generator operation condition, though it is temporarily not bad fall within it is nonstandard Using many automobile factorys can not receive the generator electronic device products of nonstandard application, and its reliability can not be protected effectively Card；Third, using import generator special voltage regulator chip, its price is higher and pressure voltage is relatively low, is also easily thrown and carried Back-pressure punctures, and the startup voltage of these integrated circuits is higher in addition, typically in 5~more than 7V, for electric generator of vehicle, has When adjuster supply voltage can be lower, make that special regulation chip functions are bad or application is limited.

Particularly, among vehicle operation, meeting frequent changes electrical load, open and close, water tank cooling such as air-conditioning The open and close of fan, other motor loads open and close moment, due to generator from high current load bust be compared with Low current load, because the reasons such as rotor core remanent magnetism, stator self inductance occur that generator output voltage skyrockets phenomenon, its is extreme Situation is that the full Unloading Voltage peak value of generator of 14V systems is complete up to the generator of more than 90V (non-snowslide bridge), 28V systems Up to more than 180V (non-snowslide bridge) attenuation trend is then presented, after several ms to hundreds of milliseconds in Unloading Voltage peak value Decay to regulation voltage Vset or decay to battery tension, wherein that terminates from Unloading Voltage peak value to decay crosses laminate section The subtriangular region surrounded is referred to as " overpressure zone ", by many existing imports and the actual measurement of domestic voltage-regulation chip It was found that under same motor, same test condition：Most chip throw load overpressure zones are higher, i.e., overpressure peak is higher, mistake Press the time longer, such as the pin 14V voltage-regulation chips of import 7, its throw load mistake when 40A busts are 2A (battery does not turn off) Voltage crest value reaches the 200mS times more than 22V, overpressure zone.This sets to generator unit stator winding, rectifier bridge, voltage-regulation chip, electricity consumption The standby particularly electronic module such as computer board, instrument board threat is larger, and electronic module is many on especially present vehicle, is easy to make Its over-voltage breakdown, set overvoltage to absorb (peak value copped wave) element even inside modules, TVS is such as set, but in reality In the vehicle operation of border, still there are many electronic modules by over-voltage breakdown, and many electronic module costs are higher, while also bring car Failure or cast anchor in operation, travel safety is affected, and one of root still optimizes ability on generator excitation Reduce the probability that failure occurs in source.

In summary, it is necessary to less, the resistance to high back-pressure of component number needed for designing, have the height of overcurrent protection function can By property, temperature tolerance is good, simple in construction, cost is relatively low, three crystal mistakes of the low overpressure zone of generator throw load of wide adaptation range Flow protection type A circuit voltages regulation chip.

The content of the invention

It is an object of the present invention to be directed to above-mentioned technical problem, there is provided less, the resistance to high back-pressure of element, have excessively stream protect Protective function, temperature tolerance are good, simple in construction, cost is low, the three of the low overpressure zone of high reliability generator throw load of wide adaptation range Crystal overcurrent protective A circuit voltages adjust chip.

According to first aspect present invention, there is provided a kind of three crystal overcurrent protective A circuits electricity of the low overpressure zone of throw load Pressure regulation chip, its be characterized in that including,

The first transistor, second transistor, third transistor, energy storage delay unit, threshold adjustment unit, resistance R1, adopt Sample unit, reference cell and afterflow unit, wherein：

The grounded emitter of the first transistor, the first crystal pipe collector by resistance R1 connections power supply just Pole, the colelctor electrode of the first transistor are also connected with the input of third transistor (grid or base stage) and energy storage delay unit Input, the third transistor earth terminal (source electrode or emitter stage) ground connection, the third transistor output end (drain electrode or Colelctor electrode) the connection second transistor colelctor electrode, the base stage of the second transistor connects the energy storage delay unit Output end, the earth terminal ground connection of the energy storage delay unit, the emitter stage of the second transistor pass through the adjusting thresholds list Member connects the base stage of the first transistor, and the third transistor output end (drain electrode or colelctor electrode) is used as the voltage-regulation The output end of chip, for controlling the exciting current of generator；The sampling unit connection positive source and ground, the sampling are single The output end of member connects the base stage of the first transistor by the reference cell, and the afterflow unit is connected to the described 3rd Between transistor output and positive source；

When generator power supply cathode voltage is less than setting value and during the third transistor normally, the energy storage is prolonged Shi Danyuan energy storage, the emitter current of the second transistor end the first transistor for 0；When generator power supply positive pole When voltage is higher than setting value, the sampling unit output voltage drives the first transistor to turn on by the reference cell, makes institute Third transistor cut-off cut-out exciting current is stated, makes second crystal at the end of the energy storage release of the energy storage delay unit Pipe ends and then makes the first transistor cut-off energy storage delay unit energy storage simultaneously, the first transistor cut-off also Promote the third transistor to turn on, the third transistor is attempted to quickly enter saturation and is led by the positive feedback effect of circuit Logical state：If the third transistor is entering normal saturation conduction state, power supply just if positive source voltage is less than setting value Persistently higher than setting value, then the sampling unit output voltage drives the first transistor to turn on to pole tension by the reference cell Make the third transistor cut-off cut-out exciting current；When the third transistor excessively stream causes the third transistor saturation pressure When drop exceedes the threshold adjustment unit on state threshold voltage, the emitter current driving the first transistor of the second transistor Turning on, which ends the third transistor, is protected, and makes described second at the end of the energy storage release of the energy storage delay unit Transistor cutoff and then cut the first transistor cut-off energy storage delay unit energy storage simultaneously, the first transistor Only also promote the third transistor to turn on, by the positive feedback effect of circuit make the third transistor attempt to quickly enter it is full And conducting state：The third transistor enters normal saturation conduction state, described the if excessively stream is continued if excessively stream releases The too high saturation voltage drop of three transistors is made described by the emitter current driving the first transistor conducting of the second transistor Third transistor cut-off continues to be protected.

According to second aspect of the present invention, there is provided a kind of three crystal overcurrent protective A circuits electricity of the low overpressure zone of throw load Pressure regulation chip, its be characterized in that including,

The first transistor, second transistor, third transistor, energy storage delay unit, threshold adjustment unit, resistance R1, two Pole pipe D6, sampling unit, reference cell and afterflow unit, wherein：

The grounded emitter of the first transistor, the first crystal pipe collector by resistance R1 connections power supply just Pole, the colelctor electrode of the first transistor are also connected with the input of third transistor (grid or base stage) and energy storage delay unit Input, the third transistor earth terminal (source electrode or emitter stage) ground connection, the third transistor output end (drain electrode or Colelctor electrode) pass through the emitter stage of the diode D6 connections second transistor, the base stage connection institute of the second transistor The output end of energy storage delay unit is stated, the colelctor electrode of the second transistor connects the positive source or connection the described 3rd is brilliant The output end of body pipe, the earth terminal ground connection of the energy storage delay unit, the emitter stage of the second transistor pass through the threshold value Adjustment unit connects the base stage of the first transistor, and the third transistor output end (drain electrode or colelctor electrode) is used as the electricity The output end of pressure regulation chip, for controlling the exciting current of generator；The sampling unit connection positive source and ground, it is described The output end of sampling unit connects the base stage of the first transistor by the reference cell, and the afterflow unit is connected to institute State between third transistor output end and positive source；

When generator power supply cathode voltage is less than setting value and during the third transistor normally, the energy storage is prolonged Shi Danyuan energy storage, the emitter voltage of the second transistor, which is pulled low, makes the threshold adjustment unit and the first transistor Cut-off；When generator power supply cathode voltage is higher than setting value, the sampling unit output voltage is driven by the reference cell Dynamic the first transistor conducting, make the third transistor cut-off cut-out exciting current, when the energy storage of the energy storage delay unit is released End the second transistor at the end of putting and then make the first transistor cut-off energy storage delay unit storage simultaneously Energy, the first transistor cut-off also promote the third transistor to turn on, and make the described 3rd by the positive feedback effect of circuit Transistor attempts to quickly enter saturation conduction state：The third transistor enters just if positive source voltage is less than setting value Normal saturation conduction state, the sampling unit output voltage passes through the benchmark if positive source voltage is persistently higher than setting value Unit driving the first transistor conducting makes the third transistor cut-off cut-out exciting current；When the third transistor excessively stream causes When the third transistor saturation voltage drop is exceeded the threshold adjustment unit on state threshold voltage, the hair of the second transistor Emitter current drives the first transistor conducting to end the third transistor and protected, when the storage of the energy storage delay unit End the second transistor at the end of discharging and then make the first transistor cut-off energy storage delay unit simultaneously Energy storage, the first transistor cut-off also promote the third transistor to turn on, and make described the by the positive feedback effect of circuit Three transistors attempt to quickly enter saturation conduction state：The third transistor enters normal saturation conduction shape if excessively stream releases State, the too high saturation voltage drop of the third transistor is driven by the emitter current of the second transistor if excessively stream is continued The first transistor conducting makes the third transistor cut-off continue to be protected.

According to third aspect present invention, there is provided a kind of three crystal overcurrent protective A circuits electricity of the low overpressure zone of throw load Pressure regulation chip, its be characterized in that including,

The grounded emitter of the first transistor, the first crystal pipe collector by resistance R1 connections power supply just Pole, the colelctor electrode of the first transistor are also connected with the input of third transistor (grid or base stage) and energy storage delay unit Input, the third transistor earth terminal (source electrode or emitter stage) ground connection, the third transistor output end (drain electrode or Colelctor electrode) institute is also connected with by the base stage of the diode D6 connections second transistor, the base stage of the second transistor The output end of energy storage delay unit is stated, the colelctor electrode of the second transistor connects the positive source or connection the described 3rd is brilliant The output end of body pipe, the earth terminal ground connection of the energy storage delay unit, the emitter stage of the second transistor pass through the threshold value Adjustment unit connects the base stage of the first transistor, and the third transistor output end (drain electrode or colelctor electrode) is used as the electricity The output end of pressure regulation chip, for controlling the exciting current of generator；The sampling unit connection positive source and ground, it is described The output end of sampling unit connects the base stage of the first transistor by the reference cell, and the afterflow unit is connected to institute State between third transistor output end and positive source；

When generator power supply cathode voltage is less than setting value and during the third transistor normally, the energy storage is prolonged Shi Danyuan energy storage, the base voltage of the second transistor be pulled low make the second transistor, the threshold adjustment unit and The first transistor is turned off；When generator power supply cathode voltage is higher than setting value, the sampling unit output voltage leads to The reference cell driving the first transistor conducting is crossed, makes the third transistor cut-off cut-out exciting current, when the energy storage End the second transistor at the end of the energy storage release of delay unit and then make the first transistor cut-off simultaneously described The energy storage of energy storage delay unit, the first transistor cut-off also promote the third transistor to turn on, and pass through the positive feedback of circuit Effect makes the third transistor attempt to quickly enter saturation conduction state：Described the if positive source voltage is less than setting value Three transistors enter normal saturation conduction state, the sampling unit output electricity if positive source voltage is persistently higher than setting value Pressure drives the first transistor conducting to make the third transistor cut-off cut-out exciting current by the reference cell；When described When three transistor excessively streams cause the third transistor saturation voltage drop to exceed the threshold adjustment unit on state threshold voltage, come from The output end voltage of energy storage delay unit makes the second transistor produce base current, the emitter stage electricity of the second transistor Stream drives the first transistor conducting to end the third transistor and protected, when the energy storage of the energy storage delay unit discharges At the end of end the second transistor so that make the first transistor cut-off energy storage delay unit energy storage simultaneously, The first transistor cut-off also promotes the third transistor to turn on, and makes the 3rd crystal by the positive feedback effect of circuit Pipe attempts to quickly enter saturation conduction state：If if excessively stream release if the third transistor enter normal saturation conduction state, Continuing excessively stream, then the too high saturation voltage drop of the third transistor drives first by the emitter current of the second transistor Transistor turns make the third transistor cut-off continue to be protected.

The invention has the advantages that above-mentioned voltage-regulation chip circuit structure is simple, small volume, high pressure, had Stream defencive function, temperature tolerance is good, cost is low, wide adaptation range, is the low overpressure zone of generator throw load of high reliability of new generation Three crystal overcurrent protective A circuit voltages regulation chip.

Brief description of the drawings

Fig. 1 is three crystal overcurrent protective A circuits of the low overpressure zone of the first throw load that embodiment of the present invention provides Voltage-regulation chip circuit structure schematic diagram；

Fig. 2 is three crystal overcurrent protective A circuits of the low overpressure zone of the first throw load that embodiment of the present invention provides The another form of electrical block diagram of voltage-regulation chip；

Fig. 3 is three crystal overcurrent protective A circuits of the low overpressure zone of the first throw load that embodiment of the present invention provides The electrical block diagram of another form of voltage-regulation chip；

Fig. 4 is three crystal overcurrent protective A circuits of the low overpressure zone of second of throw load that embodiment of the present invention provides Voltage-regulation chip circuit structure schematic diagram；

Fig. 5 is three crystal overcurrent protective A circuits of the low overpressure zone of second of throw load that embodiment of the present invention provides The another form of electrical block diagram of voltage-regulation chip；

Fig. 6 is three crystal overcurrent protective A circuits of the low overpressure zone of the third throw load that embodiment of the present invention provides Voltage-regulation chip circuit structure schematic diagram；

Fig. 7 is three crystal overcurrent protective A circuits of the low overpressure zone of the third throw load that embodiment of the present invention provides The another form of electrical block diagram of voltage-regulation chip；

Fig. 8 is " the three crystal overcurrent protective A circuit voltages regulation core of the low overpressure zone of throw load provided by the present invention Piece " generator output voltage waveform and a kind of voltage-regulation chip of prior art generator in throw load in throw load is defeated Go out voltage waveform contrast schematic diagram.

Embodiment

According to the mentality of designing of the present invention, using small numbers of element, design with overcurrent protection function, throw load Overpressure zone is relatively low, resistance to back-pressure compared with it is high, heat resistance is good, circuit is simple, area occupied is small and lower-cost voltage-regulation core Piece, it is used applied to being automatically adjusted in A circuit generators as voltage.

In a first aspect, embodiment of the present invention provides three crystal overcurrent protective A of the low overpressure zone of the first throw load Circuit voltage adjusts chip.

Embodiment 1

As shown in figure 1, chip is adjusted for three crystal overcurrent protective A circuit voltages of the low overpressure zone of the first throw load, Its design feature includes,

The first transistor 1 (Q1), second transistor 2 (Q2), third transistor 3 (Q3), energy storage delay unit 5, threshold value are adjusted Whole unit 4, resistance R1, sampling unit 7, reference cell 8 and afterflow unit 9, wherein：

The first transistor Q1 grounded emitter, first crystal pipe collector is by resistance R1 connection positive source B+, and The colelctor electrode of one transistor is also connected with third transistor Q3 input (grid) and the input of energy storage delay unit 5, and the 3rd Transistor Q3 earth terminal (source electrode) ground connection (i.e. E, as follows), third transistor Q3 output end (drain electrode) connect the second crystal Pipe Q2 colelctor electrode, the output end of second transistor Q2 base stage connection energy storage delay unit 5, the ground connection of energy storage delay unit 5 End ground connection, second transistor Q2 emitter stage connect the first transistor Q1 base by threshold adjustment unit 4 (i.e. voltage-stabiliser tube D4) Pole, output ends of the third transistor Q3 output ends F (drain electrode) as voltage-regulation chip, for controlling the excitation electricity of generator Stream；When third transistor Q3 is using double pole triode, Darlington transistor or IGBT, its corresponding input is base stage, ground connection It is colelctor electrode (as follows) to hold as emitter stage, output end；Energy storage delay unit 5 therein has diode D5, resistance R5 and electricity Hold C5, diode D5 negative pole connects resistance R5 one end and electric capacity C5 one end simultaneously, and diode D5 positive pole is as energy storage The input of delay unit, the earth terminal of the electric capacity C5 other end as energy storage delay unit, the resistance R5 other end is as storage The output end of energy delay unit；Sampling unit 7 includes resistance R71, R72 and electric capacity C7, and resistance R71, R72 are connected in series in power supply Between both positive and negative polarity, resistance R71 and resistance R72 connecting node is sampling unit output end, and resistance R71 other ends connection power supply is just Pole, resistance R72 other ends ground connection, electric capacity C7 and resistance R72 are connected in parallel, and the output end of sampling unit 7 passes through reference cell 8 The base stage of voltage-regulator diode D8 connection the first transistors, it is defeated that afterflow unit 9 (sustained diode 9) is connected to third transistor Q3 Go out between end and positive source B+.

The course of work of circuit is：

When B+ terminal voltages are less than setting value (Vset) and third transistor Q3 normallies connection exciting current, now The voltage-regulator diode D8 cut-offs of reference cell 8, then transistor Q1 should be cut-off state, and positive source B+ is electric capacity C5 through resistance R1 Charging energy-storing, because power tube Q3 is turned on, its saturation voltage drop that drains is very low (general ambipolar typically in 0.1V~1.0V scopes Transistor or IGBT saturation voltage drops are more slightly higher, but still the voltage stabilizing value less than voltage-stabiliser tube D4), and second transistor Q2 colelctor electrode Voltage is dragged down by it, and second transistor Q2 collector junction positively biaseds make the emitter current of second transistor be 0, and the first transistor is therefore Cut-off, such third transistor Q3 saturation conductions are stable state.

When loading overload or when the reason such as short circuit causes third transistor excessively stream due to Exciting Windings for Transverse Differential Protection, second transistor Q2's Collector junction can occur reverse-biased (reverse bias), emitter stage meeting output voltage U2e, as power tube Q3 drain voltages raise, three poles Pipe Q2 collector voltages are also raised, and triode Q2 emitter voltages Ue2 is also increased, when the Ue2 is elevated above adjusting thresholds During unit voltage-stabiliser tube D4 on state threshold voltage, triode Q2 emitter current driving the first transistor Q1 conductings make the 3rd crystalline substance Body pipe Q3, which ends, to be protected, and positive feedback process in this course be present：Q1 base potentials ↑ → Q1 collector potentials ↓ → Q3 Grid potential ↓ → Q3 drain potentials ↑ → Q2 collector potentials ↑ → Q2 transmittings electrode potential ↑ → D4 → Q1 base potentials ↑, this is strong Strong positive feedback process makes circuit drastically overturn for power tube Q3 cut-off states, simultaneously because Q1 conductings end diode D5, electricity Hold C5 Q2 continued as by resistance R5 electric discharges base current is provided, then by D4 Q1 is still turned on, Q3 it is still off, but Q3 Cut-off state is temporary stable state, because at the end of the storage capacitor C5 electric energy release of energy storage delay unit 5, second transistor Q2 meetings End and then end the first transistor Q1, while the energy storage of energy storage delay unit 5, the first transistor Q1 cut-offs also promote the 3rd Transistor Q3 is turned on, and by the positive feedback effect of circuit, its positive feedback process is：Cause Q2 because C5 discharge currents are gradually reduced Base potential ↓ → Q2 transmittings electrode potential ↓ → D4 → Q1 base potentials ↓ → Q1 collector potentials ↑ → Q3 grid potentials ↑ → Q3 drain electrodes Current potential ↓ → Q2 collector potentials ↓ → Q2 transmittings electrode potential ↓ → D4 → Q1 base potentials ↓, make third transistor Q3 attempt to enter rapidly Enter saturation conduction state：If excessively stream, which releases third transistor Q3, enters normal saturation conduction state, the 3rd crystalline substance if excessively stream is continued Saturation voltage drop Uds too high body pipe Q3 drives the first transistor Q1 conductings to make the 3rd by second transistor Q2 emitter current Transistor Q3 cut-offs continue to be protected.

It can be readily appreciated that current-limiting resistance can also be serially connected with the emitter circuit of second transistor, to limit crystalline substance Body pipe is operating current, but can not also go here and there current-limiting resistance, utilizes the method limit of resistance R5 limitation triodes Q2 base current Its collector current is made, because Q2 collector current Ic=β Ib, Ib are Q2 base current, β is direct current multiplication factor.

When B+ terminal voltages are higher than setting value (Vset), resistance R71 and resistance R72 connecting node are that sampling unit is defeated Go out terminal voltage makes the first transistor Q1 produce base current by voltage-regulator diode D8, therefore Q1 conductings cut third transistor Q3 Exciting current is only cut off, then transistor Q3 is reverted to conducting again with one temporary stability time of experience as set out above and encourages The stable state of magnetic.

During above-mentioned voltage-regulation, if generator output voltage exceedes setting value Vset, sampling unit output end Voltage can make triode Q1 turn on by voltage-stabiliser tube D8, power tube Q3 is kept cut-off, so (will not be generated electricity in overvoltage condition Machine output voltage is already higher than setting value Vset situation) under emergent power pipe conducting excitation chance, so bring one it is bright Aobvious beneficial effect is：Generator is in the case of throw load, because the reasons such as rotor remanent magnetism, stator self inductance can cause generator There is " Unloading Voltage " too high phenomenon, this Unloading Voltage is larger to generator and the harm of peripheral parasite power supplier, is to generate electricity Machine and voltage regulator industry are paid close attention to the most and insoluble technical problem, and existing many voltage regulator chips are in overvoltage When " the power tube conducting chance " of " overpressure zone " be present so that over-pressed " Unloading Voltage " overpressure zone increase originally, from Unloading Voltage peak value is referred to as " overpressure zone " to the subtriangular region that laminate section surrounds excessively that decay terminates, such as Fig. 8 Upper figure, the region that figure midpoint A, B, C are surrounded is overpressure zone, and frequency excitation generator voltage-regulation is determined in a kind of as existing import Device is in output generator current 40A in the case of throw load, and generator output voltage oscillogram, it rebounds electric at the throw load moment Pressure reaches VH1, and the over-pressed duration is t3-t1.

And the voltage-regulation chip that figure below is provided by embodiment of the present invention is on same generator, same output current Throw load generator output voltage oscillogram during 40A, it is seen that in throw load moment bounce voltage be VH2, the over-pressed duration is T2-t1, it is clear that t3-t1 ＞ t2-t1, VH1 ＞ VH2, this is the outstanding beneficial technique effect that the present invention is brought.So, generate electricity Machine throw load bounce voltage amplitude reduces, decreased duration, and figure midpoint a, b, c, the obvious area in overpressure zone that surrounds are less than upper The overpressure zone that point A, B, C of figure are surrounded, i.e. point a, b, c, the overpressure zone that surrounds are " low overpressure zone ".

By being found to many existing imports and the actual measurement of domestic voltage-regulation chip, in same motor, same test condition Under：Most chip throw load overpressure zones are higher, i.e., overpressure peak is higher, the over-pressed time is longer, such as the pin 14V of import 7 electricity Pressure regulation chip, when 40A busts are 2A (battery does not turn off), its throw load overpressure peak reaches 200mS more than 22V, overpressure zone Time.Under identical conditions, the 14V voltage-regulation chips of technical solution of the present invention are tested：It is that 2A (stores in 40A busts Battery does not turn off) when its throw load overpressure peak be 16.6~17.5V, overpressure zone time to be not more than the 120mS times.

This is beneficial to reduce Unloading Voltage to rectifier bridge avalanche diode, voltage-regulation chip, vehicle electric power storage by obvious Pond, the overvoltage harm of vehicle computer board, instrument board, other vehicle electronics modules, improve generator and vehicle operational reliability, drop Less trouble.

Embodiment 2

On the basis of above-described embodiment 1, embodiment of the present invention additionally provides a kind of three crystalline substances of the low overpressure zone of throw load Body overcurrent protective A circuit voltages adjust chip, as shown in Fig. 2 second transistor Q2 of the circuit in circuit shown in above-mentioned Fig. 1 Collector loop enter diode 6 (D6) and resistance R6, diode D6 positive pole connect simultaneously second transistor Q2 colelctor electrodes and Resistance R6 one end, diode D6 negative pole connection third transistor Q3 output ends (drain electrode), the resistance R6 other end connect the Three transistor Q3 output end.Its course of work and circuit shown in above-mentioned Fig. 1 are basically identical, only in power tube Q3 normallies When triode Q2 collector potentials are dragged down by diode D6, now triode Q2 collector potentials are low by diode D6 clampers Level, therefore triode Q2 transmitting electrode potentials are insufficient to allow voltage-stabiliser tube D4 to turn on, this is the stable state of power tube conducting, as power tube Q3 When drain potential raises, the collector potential for making triode Q2 by resistance R6 raise, triode Q2 launch electrode potential Ue2 also with Rise, when Ue2 rises to over voltage-stabiliser tube D4 conduction thresholds, triode Q1 conducting, make power tube Q2 end, circuit enter Temporary stable state.

Embodiment 3

Equally on the basis of above-described embodiment 1, embodiment of the present invention additionally provides a kind of low overpressure zone of throw load Three crystal overcurrent protective A circuit voltages adjust chip, as shown in figure 3, second crystal of the circuit in circuit shown in above-mentioned Fig. 1 Pipe Q2 collector loop seals in diode D6, also add resistance R6, and diode D6 positive pole connects second transistor simultaneously One end of Q2 colelctor electrodes and resistance R6, diode D6 negative pole connection third transistor Q3 output ends (drain electrode), resistance R6's is another One end connects positive source.Its course of work is also basically identical with circuit shown in above-mentioned Fig. 1, only in power tube Q3 normallies When triode Q2 collector potentials are dragged down by diode D6, now triode Q2 collector potentials are low by diode D6 clampers Level, therefore triode Q2 transmitting electrode potentials are insufficient to allow voltage-stabiliser tube D4 to turn on, this is the stable state of power tube conducting, as power tube Q3 When drain potential raises, by diode D6 clamper, raise triode Q2 collector potentials by resistance R6, triode Q2 hairs Emitter-base bandgap grading output current potential Ue2 is also increased, and when Ue2 rises to over voltage-stabiliser tube D4 conduction thresholds, triode Q1 conductings, makes work( Rate pipe Q2 ends, and circuit enters temporary stable state.

Illustrated by above-described embodiment 1,2,3, it can be deduced that：

When generator power supply cathode voltage is less than setting value and during third transistor normally excitation, energy storage delay is single First energy storage, the emitter current of second transistor end the first transistor for 0；When generator power supply cathode voltage is higher than setting During value, sampling unit output voltage drives the first transistor to turn on by reference cell, makes third transistor cut-off cut-out excitation Electric current, end second transistor at the end of the energy storage release of energy storage delay unit and then make the first transistor cut-off simultaneously The energy storage of energy storage delay unit, the first transistor cut-off also promote third transistor to turn on, and make the by the positive feedback effect of circuit Three transistors attempt to quickly enter saturation conduction state：Third transistor enters normal if positive source voltage is less than setting value Saturation conduction state, sampling unit output voltage passes through reference cell driving the if positive source voltage is persistently higher than setting value One transistor turns make third transistor cut-off cut-out exciting current；When third transistor excessively stream causes third transistor saturation pressure Drop is when exceeding threshold adjustment unit on state threshold voltage, and the emitter current driving the first transistor of second transistor, which turns on, makes the Three transistor cutoffs are protected, and are ended second transistor at the end of the energy storage release of energy storage delay unit and then are made the The energy storage delay unit energy storage simultaneously of one transistor cutoff, the first transistor cut-off also promote third transistor to turn on, and pass through circuit Positive feedback effect make third transistor attempt to quickly enter saturation conduction state：Third transistor enters just if excessively stream releases Normal saturation conduction state, the emitter current that the too high saturation voltage drop of third transistor passes through second transistor if excessively stream is continued Driving the first transistor conducting makes third transistor cut-off continue to be protected.

Second aspect, embodiment of the present invention provide three crystal overcurrent protective A of the low overpressure zone of second of throw load Circuit voltage adjusts chip.

Embodiment 4

As shown in figure 4, chip is adjusted for three crystal overcurrent protective A circuit voltages of the low overpressure zone of second of throw load, Its design feature includes, the first transistor 1 (Q1), second transistor 2 (Q2), third transistor (Q3), energy storage delay unit 5, Threshold adjustment unit 4, resistance R1 and diode 6 (D6), sampling unit 7, reference cell 8 and afterflow unit 9, wherein：

The first transistor Q1 grounded emitter, the first transistor Q1 colelctor electrodes are by resistance R1 connection positive sources, and One transistor Q1 colelctor electrode is also connected with third transistor Q3 input (grid) and the input of energy storage delay unit 5, the Three transistor Q3 earth terminal (source electrode) ground connection, third transistor Q3 output end (drain electrode) are brilliant by diode D6 connections second Body pipe Q2 emitter stage, the output end of second transistor Q2 base stage connection energy storage delay unit 5, second transistor Q2 current collection Pole connection positive source B+ (see Fig. 4) or connection third transistor Q3 output end (see Fig. 5), the ground connection of energy storage delay unit 5 End ground connection, the base stage for the voltage-stabiliser tube D4 connection the first transistors Q1 that second transistor Q2 emitter stage passes through threshold adjustment unit 4, Output end of the third transistor Q3 output end (drain electrode) as voltage-regulation chip, for controlling the exciting current of generator； Energy storage delay unit 5 therein has diode D5, resistance R5 and electric capacity C5, and diode D5 negative pole connects resistance R5's simultaneously One end and electric capacity C5 one end, the input of diode D5 positive pole as energy storage delay unit, electric capacity C5 other end conduct The earth terminal of energy storage delay unit, the output end of the resistance R5 other end as energy storage delay unit.

Sampling unit 7 includes resistance R71, R72 and electric capacity C7, and resistance R71, R72 are connected in series between power positive cathode, Resistance R71 and resistance R72 connecting node is sampling unit output end, and the resistance R71 other ends connect positive source, resistance R72 The other end is grounded, and electric capacity C7 and resistance R72 be connected in parallel, the voltage-regulator diode that the output end of sampling unit 7 passes through reference cell 8 The base stage of D8 connection the first transistors, afterflow unit 9 (sustained diode 9) are connected to third transistor Q3 output ends and power supply Between positive pole B+.

The course of work of circuit is：

When B+ terminal voltages are less than setting value (Vset) and third transistor Q3 normallies connection exciting current, now The voltage-regulator diode D8 cut-offs of reference cell 8, the electric capacity C5 charging energy-storings of energy storage delay unit 5, charge path are：Positive source B+ → resistance R1 → diode D5 → electric capacity C5 → ground, third transistor Q3 are turned on, and its drain electrode is low potential (general FET Saturation voltage drop is 0.1~1.0V), the emitting voltage of second transistor is dragged down by diode D6, is not enough to reach threshold value tune Voltage-regulator diode D4 conduction threshold in whole unit 4, end the first transistor Q1, Q3 saturation conductions connect exciting current, should State is stable state.

When loading overload or when the reason such as short circuit causes third transistor Q3 excessively streams due to Exciting Windings for Transverse Differential Protection, excessive work electricity Stream will cause larger saturation voltage drop in its internal resistance, over the ground for its drain potential can than being raised during normally, when When rising to over voltage-stabiliser tube D4 conduction thresholds, the reverse-biased cut-offs of diode D6, second transistor Q2 emitter current can drive The first transistor Q1 is turned on, and its colelctor electrode is exported low potential, diode D5 cut-offs, and electric capacity C5 passes through resistance R5 → Q2 emitter junctions → D4 → Q1 emitter junctions → ground is discharged, and Q1 conductings also end third transistor Q3 to be protected, when energy storage delay unit C5 energy storage release at the end of make second transistor Q2 end so that make the first transistor Q1 cut-off simultaneously energy storage delay unit 5 Electric capacity C5 continue energy storage, the first transistor Q1 recover cut-off, also promote third transistor Q3 turn on, pass through the positive feedback of circuit Effect makes third transistor Q3 attempt to quickly enter saturation conduction state：Third transistor Q3 enters normal full if excessively stream releases The emitter current that saturation voltage drop with conducting state, too high third transistor Q3 if excessively stream is continued passes through second transistor Q2 Driving the first transistor conducting Q1 makes third transistor Q3 cut-offs continue to be protected.

It can be readily appreciated that current limiting electricity can also be concatenated on the collector loop or emitter circuit of second transistor Resistance, is operating current with limit transistor, but can not also go here and there current-limiting resistance, utilizes resistance R5 limitation triodes Q2 ground level electricity The method of stream limits its collector current.

When B+ terminal voltages are higher than setting value (Vset), resistance R71 and resistance R72 connecting node are that sampling unit is defeated Go out terminal voltage makes the first transistor produce base current by voltage-regulator diode D8, the first transistor Q1 conductings is made the 3rd crystal Pipe Q3 cut-off cut-out exciting currents, then make transistor Q3 revert to conducting again with experience temporary stability time as set out above The stable state of excitation.

During above-mentioned voltage-regulation, with previous embodiment 1 similarly, if generator output voltage exceedes setting value Vset, then sampling unit output end voltage can be made by voltage-stabiliser tube D8 triode Q1 turn on, make power tube Q3 keep cut-off, so Will not under overvoltage condition (i.e. generator output voltage is already higher than setting value Vset situation) emergent power pipe conducting excitation Chance, so bring an obvious beneficial effect to be：Generator is in the case of throw load, due to rotor remanent magnetism, stator The reasons such as self-induction can cause generator occur " Unloading Voltage " too high phenomenon, this Unloading Voltage to generator and periphery by Circuit harm is larger, is generator and voltage regulator industry is paid close attention to the most and insoluble technical problem, it is existing very There is " power tube conducting chance " in multivoltage regulator chip so that over-pressed " Unloading Voltage " mistake originally in overvoltage Nip increases, and such as Fig. 8 upper figure, a kind of as existing import determines frequency excitation generator voltage regulator and exports electricity in generator When flowing 40A in the case of throw load, generator output voltage oscillogram, it reaches VH1 in throw load moment bounce voltage, crosses pressure holding The continuous time is t3-t1.

And the voltage-regulation chip that figure below is provided by embodiment of the present invention is on same generator, same output current Throw load generator output voltage oscillogram during 40A, it is seen that in throw load moment bounce voltage be VH2, the over-pressed duration is T2-t1, it is clear that t3-t1 ＞ t2-t1, VH1 ＞ VH2, this is the outstanding beneficial technique effect that the present invention is brought.So, generate electricity Machine throw load bounce voltage amplitude reduces, decreased duration, i.e. " low overpressure zone ", terminates from Unloading Voltage peak value to decay The subtriangular region that surrounds of laminate section of crossing be referred to as " overpressure zone ", by many existing imports and domestic voltage-regulation Chip actual measurement is found, under same motor, same test condition：Most chip throw load overpressure zones are higher, i.e., voltage crest Value is higher, the over-pressed time is longer, such as the pin 14V voltage-regulation chips of import 7, when 40A busts are 2A (battery does not turn off) Its throw load overpressure peak reaches the 200mS times more than 22V, overpressure zone.Under identical conditions, by the 14V of technical solution of the present invention Voltage-regulation chip is tested：When 40A busts are 2A (battery does not turn off) its throw load overpressure peak be 16.6~ 17.5V, overpressure zone time are not more than the 120mS times.

Embodiment 5

The three crystal overcurrent protective A circuit voltages that embodiment of the present invention additionally provides a kind of low overpressure zone of throw load are adjusted Chip is saved, as shown in figure 5, the circuit is by the second transistor Q2 of circuit shown in above-mentioned Fig. 4 colelctor electrode reconfiguration to power tube Q3 Output end, its course of work is also basically identical with circuit shown in above-mentioned Fig. 4, and difference is that overcurrent protection is started to control than figure The evening of circuit shown in 4, because being that the base current that triode 1 provides mostlys come from power tube Q3 excessively streams by Q2 and D4 When too high saturation voltage drop, the saturation voltage drop initially rise the phase again below supply voltage B+, can be led according to difference The power tube of logical internal resistance and different saturation voltage drops is adapted to select Fig. 4 or Fig. 5 circuits, so that the properties of product designed become excellent.

Pass through the elaboration of above-described embodiment 4 and 5, it can be deduced that：

When generator power supply cathode voltage is less than setting value and during third transistor normally excitation, energy storage delay is single First energy storage, the emitter voltage of second transistor, which is pulled low, ends threshold adjustment unit and the first transistor；It is electromechanical when generating electricity When source cathode voltage is higher than setting value, sampling unit output voltage drives the first transistor to turn on by reference cell, makes the 3rd Transistor cutoff cuts off exciting current, ends second transistor at the end of the energy storage release of energy storage delay unit and then makes The first transistor cut-off energy storage delay unit energy storage simultaneously, the first transistor cut-off also promote third transistor to turn on, and pass through electricity The positive feedback effect on road makes third transistor attempt to quickly enter saturation conduction state：If positive source voltage is less than setting value Third transistor enters normal saturation conduction state, the sampling unit output voltage if positive source voltage is persistently higher than setting value The first transistor conducting is driven to make third transistor cut-off cut-out exciting current by reference cell；When third transistor excessively stream causes When the third transistor saturation voltage drop is exceeded threshold adjustment unit on state threshold voltage, the emitter current driving of second transistor The first transistor conducting ends third transistor to be protected, and makes at the end of the energy storage release of energy storage delay unit second brilliant Body pipe ends and then the first transistor cut-off energy storage delay unit energy storage simultaneously, the first transistor cut-off is also promoted the 3rd crystalline substance Body pipe turns on, and makes third transistor attempt to quickly enter saturation conduction state by the positive feedback effect of circuit：If excessively stream releases Then third transistor enters normal saturation conduction state, the too high saturation voltage drop of third transistor passes through second if excessively stream is continued The emitter current driving the first transistor conducting of transistor makes third transistor cut-off continue to be protected.

The third aspect, embodiment of the present invention provide three crystal overcurrent protective A of the low overpressure zone of the third throw load Circuit voltage adjusts chip.

Embodiment 6, embodiment 7

As shown in Figure 6 and Figure 7, adjusted for three crystal overcurrent protective A circuit voltages of the low overpressure zone of the third throw load Chip, its design feature include, the first transistor 1 (Q1), second transistor 2 (Q2), third transistor 3 (Q3), energy storage delay Unit 5, threshold adjustment unit 4, resistance R1, diode 6 (D6), sampling unit 7, reference cell 8 and afterflow unit 9, wherein：

The first transistor Q1 grounded emitter, the first transistor Q1 colelctor electrodes by resistance R1 connection positive source B+, The first transistor Q1 colelctor electrode is also connected with third transistor Q3 input (grid) and the input of energy storage delay unit 5, Third transistor Q3 earth terminal (source electrode) ground connection, third transistor Q3 output end (drain electrode) pass through diode D6 connections second Transistor Q2 base stage, second transistor Q2 base stage are also connected with the output end of energy storage delay unit 5, second transistor Q2 collection Electrode connection positive source B+ (Fig. 7) or connection third transistor Q3 output end F (Fig. 6), the earth terminal of energy storage delay unit 5 Ground connection, second transistor Q2 emitter stage connect the first transistor Q1 base by threshold adjustment unit 4 (voltage-regulator diode D8) Pole, output end of the third transistor Q3 output ends (drain electrode or colelctor electrode) as voltage-regulation chip, for controlling generator Exciting current；Energy storage delay unit 5 therein has diode D5, resistance R5 and electric capacity C5, and diode D5 negative pole connects simultaneously Connecting resistance R5 one end and electric capacity C5 one end, the input of diode D5 positive pole as energy storage delay unit, electric capacity C5's Earth terminal of the other end as energy storage delay unit, the output end of the resistance R5 other end as energy storage delay unit.

The course of work of circuit is：

When B+ terminal voltages are less than setting value (Vset) and third transistor Q3 normallies connection exciting current, now Reference cell 8 voltage-regulator diode D8 cut-off, the electric capacity C5 charging energy-storings of energy storage delay unit 5, charge path as hereinbefore, Third transistor Q3 is turned on, and its drain electrode is low potential (general FET saturation voltage drop is 0.1~1.0V), passes through diode D6 Second transistor Q2 base potential is dragged down, second transistor Q2 emitter voltage is also pulled low, and is not enough to reach threshold value Voltage-regulator diode D4 conduction threshold in adjustment unit 4, end the first transistor Q1, Q3 saturation conductions, the state is stable state.

When third transistor Q3 excessively streams make third transistor saturation voltage drop more than the D4 conduction thresholds electricity of threshold adjustment unit During pressure, second transistor Q2 conductings：

In figure 6：Q2 emitter current includes base current Ib2, and its source is electric capacity C5 positive poles → resistance R5 → Q2 Emitter junction, also comprising Q2 collector current Ic2, its path source is the too high saturation voltage drop Uds → Q2 collection of power tube Q3 drain electrodes Electrode → Q2 emitter stages, general collector current manyfold bigger than base current, resistance R5 is reasonably selected, three poles can be limited Pipe Q2 collector current is unlikely to the permissible value beyond Q2, that is, foundation Ic2=β Ib2, wherein β are direct current multiplication factor.

In the figure 7：Q2 emitter current includes base current Ib2, and its source is electric capacity C5 positive poles → resistance R5 → Q2 Emitter junction, also comprising Q2 collector current Ic2, its path source is positive source B+ → Q2 colelctor electrodes → Q2 emitter stages, typically Collector current manyfold bigger than base current, resistance R5 is reasonably selected, triode Q2 collector current can be limited not It is direct current multiplication factor as the permissible value beyond Q2, that is, according to Ic2=β Ib2, wherein β.

The second transistor Q2 of above-mentioned two figure emitter current driving the first transistor Q1 conductings, the output of its colelctor electrode are low Current potential, diode D5 cut-offs, electric capacity C5 are discharged by resistance R5 → Q2 emitter junctions → D4 → Q1 emitter junctions → ground, Q1 conductings Also end third transistor Q3 to be protected, cut second transistor Q2 at the end of the C5 energy storage release of energy storage delay unit Only and then the electric capacity C5 of the first transistor Q1 cut-offs while energy storage delay unit 5 is set to continue energy storage, the first transistor Q1 recoveries section Only, also promote third transistor Q3 to turn on, make third transistor Q3 attempt to quickly enter saturation by the positive feedback effect of circuit Conducting state：Third transistor Q3 enters normal saturation conduction state, the third transistor if excessively stream is continued if excessively stream releases Saturation voltage drop too high Q3 drives the first transistor to turn on Q1 by second transistor Q2 emitter current makes third transistor Q3 cut-offs continue to be protected.

It can be readily appreciated that current limiting electricity can also be concatenated on the collector loop or emitter circuit of second transistor Resistance, with the operating current of limit transistor.In threshold adjustment unit that can also be in the above-described embodiments or the first transistor Base loop or on be serially connected with current-limiting resistance, with the operating current of further limit transistor.

During above-mentioned voltage-regulation, if generator output voltage exceedes setting value Vset, sampling unit output end Voltage can make triode Q1 turn on by voltage-stabiliser tube D8, power tube Q3 is kept cut-off, so (will not be generated electricity in overvoltage condition Machine output voltage is already higher than setting value Vset situation) under emergent power pipe conducting excitation chance, so bring one it is bright Aobvious beneficial effect is：Generator is in the case of throw load, because the reasons such as rotor remanent magnetism, stator self inductance can cause generator There is " Unloading Voltage " too high phenomenon, this Unloading Voltage is larger to generator and the harm of peripheral parasite power supplier, is to generate electricity Machine and voltage regulator industry are paid close attention to the most and insoluble technical problem, and existing many voltage regulator chips are in overvoltage When " power tube conducting chance " be present so that over-pressed " Unloading Voltage " overpressure zone increase originally, such as Fig. 8 upper figure, A kind of as existing import determines frequency excitation generator voltage regulator in output generator current 40A in the case of throw load, Generator output voltage oscillogram, it reaches VH1 in throw load moment bounce voltage, and the over-pressed duration is t3-t1.

Pass through the elaboration of above-described embodiment 6,7, it can be deduced that：

When generator power supply cathode voltage is less than setting value and during third transistor normally excitation, energy storage delay is single First energy storage, the base voltage of second transistor, which is pulled low, is turned off second transistor, threshold adjustment unit and the first transistor； When generator power supply cathode voltage is higher than setting value, sampling unit output voltage drives the first transistor to lead by reference cell It is logical, make third transistor cut-off cut-out exciting current, cut second transistor at the end of the energy storage release of energy storage delay unit Only and then the first transistor cut-off energy storage delay unit energy storage simultaneously, the first transistor cut-off is set also to promote third transistor to lead It is logical, make third transistor attempt to quickly enter saturation conduction state by the positive feedback effect of circuit：If positive source voltage is low In setting value, then third transistor samples list into normal saturation conduction state, if positive source voltage is persistently higher than setting value First output voltage drives the first transistor conducting to make third transistor cut-off cut-out exciting current by reference cell；When the 3rd crystalline substance When body pipe excessively stream causes the third transistor saturation voltage drop to exceed threshold adjustment unit on state threshold voltage, from energy storage delay unit Output end voltage make second transistor produce base current, second transistor emitter current driving the first transistor conducting End third transistor to be protected, when energy storage delay unit energy storage release at the end of make second transistor end and then Make the first transistor cut-off energy storage delay unit energy storage simultaneously, the first transistor cut-off also promote third transistor to turn on, pass through The positive feedback effect of circuit makes third transistor attempt to quickly enter saturation conduction state：Third transistor is entered if excessively stream releases Enter normal saturation conduction state, the emitter stage that the too high saturation voltage drop of third transistor passes through second transistor if excessively stream is continued Electric current driving the first transistor conducting makes third transistor cut-off continue to be protected.

Embodiments of the invention are merely to illustrate technical scheme, are not limitations of the present invention, by equivalent Replacement and non-creativeness labour income to other embodiment or other combination obtained by embodiment each fall within protection of the present invention Scope, protection scope of the present invention are defined by the claims.

Claims

A kind of 1. three crystal overcurrent protective A circuit voltages regulation chip of the low overpressure zone of throw load, it is characterised in that including：

The first transistor, second transistor, third transistor, energy storage delay unit, threshold adjustment unit, resistance R1, sampling are single Member, reference cell and afterflow unit, wherein：

The grounded emitter of the first transistor, the first crystal pipe collector pass through resistance R1 connection positive sources, institute The colelctor electrode for stating the first transistor is also connected with the input of the input of third transistor (grid or base stage) and energy storage delay unit End, earth terminal (the source electrode or emitter stage) ground connection of the third transistor, output end (drain electrode or the current collection of the third transistor Pole) the connection second transistor colelctor electrode, the base stage of the second transistor connects the output of the energy storage delay unit End, the earth terminal ground connection of the energy storage delay unit, the emitter stage of the second transistor are connected by the threshold adjustment unit The base stage of the first transistor is connect, the third transistor output end (drain electrode or colelctor electrode) is used as the voltage-regulation chip Output end, for controlling the exciting current of generator；The sampling unit connection positive source and ground, the sampling unit Output end connects the base stage of the first transistor by the reference cell, and the afterflow unit is connected to the 3rd crystal Between pipe output end and positive source；

When generator power supply cathode voltage is less than setting value and during the third transistor normally, the energy storage delay is single First energy storage, the emitter current of the second transistor end the first transistor for 0；When generator power supply cathode voltage During higher than setting value, the sampling unit output voltage drives the first transistor to turn on by the reference cell, makes described the Three transistor cutoffs cut off exciting current, cut the second transistor at the end of the energy storage release of the energy storage delay unit Only and then the first transistor cut-off energy storage delay unit energy storage simultaneously, the first transistor cut-off is set also to promote The third transistor conducting, makes the third transistor attempt to quickly enter saturation conduction shape by the positive feedback effect of circuit State：If the third transistor enters normal saturation conduction state, positive source electricity if positive source voltage is less than setting value Pressure holding is continuous, and higher than setting value, then the sampling unit output voltage drives the first transistor conducting to make institute by the reference cell State third transistor cut-off cut-out exciting current；When the third transistor excessively stream causes the third transistor saturation voltage drop to surpass When crossing the threshold adjustment unit on state threshold voltage, the emitter current driving the first transistor conducting of the second transistor End the third transistor to be protected, make second crystal at the end of the energy storage release of the energy storage delay unit Pipe ends and then makes the first transistor cut-off energy storage delay unit energy storage simultaneously, the first transistor cut-off also Promote the third transistor to turn on, the third transistor is attempted to quickly enter saturation and is led by the positive feedback effect of circuit Logical state：The third transistor enters normal saturation conduction state, the 3rd crystalline substance if excessively stream is continued if excessively stream releases The too high saturation voltage drop of body pipe drives the first transistor conducting to make the described 3rd by the emitter current of the second transistor Transistor cutoff continues to be protected.
A kind of 2. three crystal overcurrent protective A circuit voltages regulation chip of the low overpressure zone of throw load, it is characterised in that including：

The first transistor, second transistor, third transistor, energy storage delay unit, threshold adjustment unit, resistance R1, diode D6, sampling unit, reference cell and afterflow unit, wherein：

The grounded emitter of the first transistor, the first crystal pipe collector pass through resistance R1 connection positive sources, institute The colelctor electrode for stating the first transistor is also connected with the input of the input of third transistor (grid or base stage) and energy storage delay unit End, earth terminal (the source electrode or emitter stage) ground connection of the third transistor, output end (drain electrode or the current collection of the third transistor Pole) pass through the emitter stage of the diode D6 connections second transistor, the base stage connection storage of the second transistor The output end of energy delay unit, the colelctor electrode of the second transistor connect the positive source or the connection third transistor Output end, the earth terminal ground connection of the energy storage delay unit, the emitter stage of the second transistor passes through the adjusting thresholds Unit connects the base stage of the first transistor, and the third transistor output end (drain electrode or colelctor electrode) is adjusted as the voltage The output end of chip is saved, for controlling the exciting current of generator；The sampling unit connection positive source and ground, the sampling The output end of unit connects the base stage of the first transistor by the reference cell, and the afterflow unit is connected to described the Between three transistor outputs and positive source；

When generator power supply cathode voltage is less than setting value and during the third transistor normally, the energy storage delay is single First energy storage, the emitter voltage of the second transistor, which is pulled low, cuts the threshold adjustment unit and the first transistor Only；When generator power supply cathode voltage is higher than setting value, the sampling unit output voltage is driven by the reference cell The first transistor turns on, and makes the third transistor cut-off cut-out exciting current, when the energy storage of the energy storage delay unit discharges At the end of end the second transistor so that make the first transistor cut-off energy storage delay unit energy storage simultaneously, The first transistor cut-off also promotes the third transistor to turn on, and makes the 3rd crystal by the positive feedback effect of circuit Pipe attempts to quickly enter saturation conduction state：The third transistor enters normal full if positive source voltage is less than setting value With conducting state, if positive source voltage is persistently higher than setting value, the sampling unit output voltage passes through the reference cell Driving the first transistor conducting makes the third transistor cut-off cut-out exciting current；When the third transistor excessively stream causes institute When stating third transistor saturation voltage drop and exceeding the threshold adjustment unit on state threshold voltage, the emitter stage of the second transistor Electric current drives the first transistor conducting to end the third transistor and protected, when the energy storage of the energy storage delay unit is released End the second transistor at the end of putting and then make the first transistor cut-off energy storage delay unit storage simultaneously Energy, the first transistor cut-off also promote the third transistor to turn on, and make the described 3rd by the positive feedback effect of circuit Transistor attempts to quickly enter saturation conduction state：The third transistor enters normal saturation conduction shape if excessively stream releases State, the too high saturation voltage drop of the third transistor is driven by the emitter current of the second transistor if excessively stream is continued The first transistor conducting makes the third transistor cut-off continue to be protected.
A kind of 3. three crystal overcurrent protective A circuit voltages regulation chip of the low overpressure zone of throw load, it is characterised in that including：

The first transistor, second transistor, third transistor, energy storage delay unit, threshold adjustment unit, resistance R1, diode D6, sampling unit, reference cell and afterflow unit, wherein：

The grounded emitter of the first transistor, the first crystal pipe collector pass through resistance R1 connection positive sources, institute The colelctor electrode for stating the first transistor is also connected with the input of the input of third transistor (grid or base stage) and energy storage delay unit End, earth terminal (the source electrode or emitter stage) ground connection of the third transistor, output end (drain electrode or the current collection of the third transistor Pole) storage is also connected with by the base stage of the diode D6 connections second transistor, the base stage of the second transistor The output end of energy delay unit, the colelctor electrode of the second transistor connect the positive source or the connection third transistor Output end, the earth terminal ground connection of the energy storage delay unit, the emitter stage of the second transistor passes through the adjusting thresholds Unit connects the base stage of the first transistor, and the third transistor output end (drain electrode or colelctor electrode) is adjusted as the voltage The output end of chip is saved, for controlling the exciting current of generator；The sampling unit connection positive source and ground, the sampling The output end of unit connects the base stage of the first transistor by the reference cell, and the afterflow unit is connected to described the Between three transistor outputs and positive source；

When generator power supply cathode voltage is less than setting value and during the third transistor normally, the energy storage delay is single First energy storage, the base voltage of the second transistor, which is pulled low, makes the second transistor, the threshold adjustment unit and described The first transistor is turned off；When generator power supply cathode voltage is higher than setting value, the sampling unit output voltage passes through institute Reference cell driving the first transistor conducting is stated, makes the third transistor cut-off cut-out exciting current, when the energy storage is delayed End the second transistor at the end of the energy storage release of unit and then make the first transistor cut-off energy storage simultaneously Delay unit energy storage, the first transistor cut-off also promote the third transistor to turn on, and pass through the positive feedback effect of circuit The third transistor is set to attempt to quickly enter saturation conduction state：The described 3rd is brilliant if positive source voltage is less than setting value Body pipe enters normal saturation conduction state, the sampling unit output voltage leads to if positive source voltage is persistently higher than setting value Crossing the reference cell driving the first transistor conducting makes the third transistor cut-off cut-out exciting current；When the described 3rd crystalline substance When body pipe excessively stream causes the third transistor saturation voltage drop to exceed the threshold adjustment unit on state threshold voltage, from energy storage The output end voltage of delay unit makes the second transistor produce base current, and the emitter current of the second transistor drives Dynamic the first transistor conducting ends the third transistor to be protected, when the energy storage release of the energy storage delay unit terminates When end the second transistor and then make the first transistor cut-off energy storage delay unit energy storage simultaneously, described The first transistor cut-off also promotes the third transistor to turn on, and tries the third transistor by the positive feedback effect of circuit Figure quickly enters saturation conduction state：If the third transistor enters normal saturation conduction state, continued if excessively stream releases Then the too high saturation voltage drop of the third transistor drives first crystal to excessively stream by the emitter current of the second transistor Pipe conducting makes the third transistor cut-off continue to be protected.