CN208000512U - Three crystal overcurrent protective A circuit voltages of the low overpressure zone of throw load adjust chip - Google Patents

Abstract

A kind of three crystal overcurrent protective A circuit voltages of the low overpressure zone of throw load adjust chip, including:The first transistor Q1 emitters are grounded, and Q1 collectors meet positive pole B+ through resistance R1, which is also connected with 5 input terminal of third transistor Q3 grids and energy storage delay unit;Transistor Q3 source electrodes are grounded E, its connection second transistor Q2 collector that drain, transistor Q2 base stages connect 5 output end of energy storage delay unit, the ground terminal of energy storage delay unit 5 is grounded, transistor Q2 emitters connect the base stage of transistor Q1 by threshold adjustment unit 4, and the drain electrode of transistor Q3 is excitation end F;Sampling unit 7 connects positive pole and ground, and output end connects the base stage of transistor Q1 by reference cell 8, and afterflow unit 9 is connected between excitation end and B+;Have the advantages that chip circuit simple, high pressure, have that overcurrent protection function, temperature tolerance are good, throw load overpressure zone is low, at low cost, wide adaptation range, reliability are high.

Description

Three crystal overcurrent protective A circuit voltages of the low overpressure zone of throw load adjust chip

Technical field

The utility model belongs to automobile current generator control technology field, and the three crystal overcurrents for being related to the low overpressure zone of throw load are protected Shield type A circuit voltages adjust chip.

Background technology

Automobile current generator works in temperature and becomes that range is wide, long by high-temperature baking time, vibration is big, electromagnetic interference is larger, voltage It fluctuates among larger particular job environmental condition.

Wherein, the existing automobile current generator overwhelming majority is internal voltage regulater structure, it is desirable that generator voltage is adjusted Device will also be adapted to above-mentioned more severe working environment, and general electronic component and circuit are difficult to become range in this temperature Greatly, long-term stable operation under the environment of high-temperature time length.Practice have shown that many voltage regulator electronic chips are in high temperature, big temperature Occur the pernicious failures such as snap, power tube punctures, voltage is out of control under change range, causes automobile current generator that cannot generate electricity so that vehicle It casts anchor or regulatory function is out of control that output voltage is made to be sharply increased, even there is burning generator, breakdown computer board, damage store The catastrophe failures such as battery and its distribution line.

In addition, internal voltage regulater small volume, the circuit board space allowed by regulator bracket is narrow, one As under 2.5cmX3.5cm, to generator voltage controller number of elements require be it is more fewer better, therefore, many automobiles hair Motor uses the voltage regulator chip of the old circuit of tradition, inside only comprising several transistors, several to more than ten electricity The surface mount elements such as resistance, capacitance form thick film chip.But this simple thick film chip does not have overcurrent protection function, for automobile For generator, exciting power pipe over-current phenomenon avoidance is caused to be common again due to Exciting Windings for Transverse Differential Protection short circuit or the electric leakage of carbon brush powder etc. Technical problem, so that many voltage regulator exciting power pipes cause generator voltage out of control after puncturing due to overcurrent, to Solve the problems, such as overcurrent protection, existing way, first, more complicated current foldback circuit is used, but because element is more, electricity So multicomponent can not be born inside pressure adjuster;Second is that using comparator chip, but existing universal comparator or operation are put Big device chip tolerable temperature performance and resistance to back-pressure index cannot meet generator operation condition, though it is temporarily not bad also belong to it is nonstandard Using many automobile factorys cannot receive the generator electronic device products of nonstandard application, and reliability can not be protected effectively Card;Third, using import generator special voltage regulator chip, higher price and pressure voltage is relatively low is also easy to be thrown to carry Back-pressure punctures, and in addition the startup voltage of these integrated circuits is higher, generally in 5~7V or more, for electric generator of vehicle, has When adjuster supply voltage can be lower, keep special adjusting chip functions bad or application be limited.

In particular, in vehicle operation, meeting frequent changes electrical load, as the open and close of air-conditioning, water tank cool down The open and close of fan, other motor loads open and close moment, due to generator from high current load bust be compared with Low current load will appear generator output voltage due to rotor core remanent magnetism, stator self inductance etc. and skyrocket phenomenon, extreme Situation is that the full Unloading Voltage peak value of generator of 14V systems is complete up to 90V or more (non-snowslide bridge), the generator of 28V systems Up to 180V or more (non-snowslide bridge) attenuation trend is then presented, after several ms to hundreds of milliseconds in Unloading Voltage peak value It decays to and adjusts voltage Vset or decay to battery tension, wherein that terminates from Unloading Voltage peak value to decaying crosses laminate section The subtriangular region surrounded is referred to as " overpressure zone ", by the actual measurement that many existing imports and domestic voltage are adjusted with chip It was found that under same motor, same test condition:Most chip throw loads overpressure zone is higher, i.e., overpressure peak is higher, mistake Press the time longer, if 7 foot 14V voltages of import adjust chip, its throw load mistake when 40A busts are 2A (accumulator does not turn off) Voltage crest value be more than 22V, overpressure zone reach the 200mS times.This adjusts chip to generator unit stator winding, rectifier bridge, voltage, electricity consumption is set The standby especially electronic modules such as computer board, instrument board threat is larger, and there are many electronic module on especially present vehicle, are easy to make Overvoltage is arranged even inside modules and absorbs (peak value copped wave) element, such as setting TVS for its over-voltage breakdown, but in reality In the operation of border vehicle, or there are many electronic modules by over-voltage breakdown, and many electronic module costs are higher, while also bringing vehicle It failure or casts anchor in operation, travel safety is affected, and one of root still optimizes ability on generator excitation Reduce the probability that failure occurs in source.

In conclusion need to design less, the resistance to high back-pressure of required component number, the height with overcurrent protection function can By property, temperature tolerance is good, simple in structure, cost is relatively low, three crystal mistakes of the low overpressure zone of generator throw load of wide adaptation range It flows protection type A circuit voltages and adjusts chip.

Utility model content

The purpose of this utility model is that in view of the above technical problems, provide less, the resistance to high back-pressure of element, had Flow that defencive function, temperature tolerance are good, the low overpressure zone of high reliability generator throw load simple in structure, at low cost, wide adaptation range Three crystal overcurrent protective A circuit voltages adjust chip.

According to the utility model in a first aspect, providing a kind of three crystal overcurrent protective A electricity of the low overpressure zone of throw load Road voltage adjusts chip, be characterized in that including,

The first transistor, third transistor, energy storage delay unit, threshold adjustment unit, resistance R1, is adopted second transistor Sample unit, reference cell and afterflow unit, wherein:

The emitter of the first transistor is grounded, the first crystal pipe collector by resistance R1 connections power supply just Pole, the collector of the first transistor are also connected with the input terminal of third transistor (grid or base stage) and energy storage delay unit Input terminal, the third transistor ground terminal (source electrode or emitter) ground connection, the third transistor output end (drain electrode or Collector) the connection second transistor collector, the base stage of the second transistor connects the energy storage delay unit Output end, the ground terminal ground connection of the energy storage delay unit, the emitter of the second transistor pass through the adjusting thresholds list Member connects the base stage of the first transistor, and the third transistor output end (drain electrode or collector) is adjusted as the voltage The output end of chip, the exciting current for controlling generator;The sampling unit connection positive pole and ground, the sampling are single The output end of member connects the base stage of the first transistor by the reference cell, and the afterflow unit is connected to the third Between transistor output and positive pole;

When generator power supply cathode voltage is less than setting value and when the third transistor normally, the energy storage is prolonged The emitter current of Shi Danyuan energy storage, the second transistor makes the first transistor end for 0;When generator power supply anode When voltage is higher than setting value, the sampling unit output voltage drives the first transistor to be connected by the reference cell, makes institute Third transistor cut-off cut-out exciting current is stated, makes second crystal at the end of the energy storage release of the energy storage delay unit Pipe ends and then makes the first transistor cut-off energy storage delay unit energy storage simultaneously, the first transistor cut-off also Promote the third transistor to be connected, so that the third transistor is attempted to quickly enter saturation and is led by the positive feedback effect of circuit Logical state:If entering normal saturation conduction state, power supply just less than the third transistor if setting value if positive pole voltage Pole tension is persistently higher than setting value, and then the sampling unit output voltage drives the first transistor conducting by the reference cell Make the third transistor cut-off cut-out exciting current;When the third transistor overcurrent causes the third transistor saturation pressure When drop is more than the threshold adjustment unit on state threshold voltage, the emitter current of the second transistor drives the first transistor Being connected, which makes the third transistor end, is protected, and makes described second at the end of the energy storage release of the energy storage delay unit Transistor cutoff and then the first transistor cut-off energy storage delay unit energy storage simultaneously, the first transistor is made to cut Only also promote the third transistor to be connected, by the positive feedback effect of circuit make the third transistor attempt to quickly enter it is full And conducting state:The third transistor enters normal saturation conduction state, described the if continuing overcurrent if overcurrent releases The excessively high saturation voltage drop of three transistors is made described by the emitter current driving the first transistor conducting of the second transistor Third transistor cut-off continues to be protected.

According to the utility model second aspect, a kind of three crystal overcurrent protective A electricity of the low overpressure zone of throw load are provided Road voltage adjusts chip, be characterized in that including,

The first transistor, second transistor, third transistor, energy storage delay unit, threshold adjustment unit, resistance R1, two Pole pipe D6, sampling unit, reference cell and afterflow unit, wherein:

The emitter of the first transistor is grounded, the first crystal pipe collector by resistance R1 connections power supply just Pole, the collector of the first transistor are also connected with the input terminal of third transistor (grid or base stage) and energy storage delay unit Input terminal, the third transistor ground terminal (source electrode or emitter) ground connection, the third transistor output end (drain electrode or Collector) emitter of the second transistor is connected by the diode D6, the base stage of the second transistor connects institute The output end of energy storage delay unit is stated, the collector of the second transistor connects the positive pole or the connection third is brilliant The output end of body pipe, the ground terminal ground connection of the energy storage delay unit, the emitter of the second transistor pass through the threshold value Adjustment unit connects the base stage of the first transistor, and the third transistor output end (drain electrode or collector) is used as the electricity Pressure adjusts the output end of chip, the exciting current for controlling generator;The sampling unit connection positive pole and ground, it is described The output end of sampling unit connects the base stage of the first transistor by the reference cell, and the afterflow unit is connected to institute It states between third transistor output end and positive pole;

When generator power supply cathode voltage is less than setting value and when the third transistor normally, the energy storage is prolonged Shi Danyuan energy storage, the emitter voltage of the second transistor, which is pulled low, makes the threshold adjustment unit and the first transistor Cut-off;When generator power supply cathode voltage is higher than setting value, the sampling unit output voltage is driven by the reference cell Dynamic the first transistor conducting makes the third transistor cut-off cut-out exciting current, when the energy storage of the energy storage delay unit is released End the second transistor at the end of putting and then makes the first transistor cut-off energy storage delay unit storage simultaneously Energy, the first transistor cut-off also promote the third transistor to be connected, and make the third by the positive feedback effect of circuit Transistor attempts to quickly enter saturation conduction state:Enter just less than the third transistor if setting value if positive pole voltage Normal saturation conduction state, the sampling unit output voltage passes through the benchmark if positive pole voltage is persistently higher than setting value Unit driving the first transistor conducting makes the third transistor cut-off cut-out exciting current;When the third transistor overcurrent causes When the third transistor saturation voltage drop being made to be more than the threshold adjustment unit on state threshold voltage, the hair of the second transistor Emitter current drives the first transistor conducting that the third transistor is made to end and is protected, when the storage of the energy storage delay unit So that the second transistor is ended at the end of capable of discharging and then makes the first transistor cut-off energy storage delay unit simultaneously Energy storage, the first transistor cut-off also promote the third transistor to be connected, and make described the by the positive feedback effect of circuit Three transistors attempt to quickly enter saturation conduction state:The third transistor enters normal saturation conduction shape if overcurrent releases State, the excessively high saturation voltage drop of the third transistor is driven by the emitter current of the second transistor if continuing overcurrent The first transistor conducting makes the third transistor cut-off continue to be protected.

According to the utility model third aspect, a kind of three crystal overcurrent protective A electricity of the low overpressure zone of throw load are provided Road voltage adjusts chip, be characterized in that including,

The first transistor, second transistor, third transistor, energy storage delay unit, threshold adjustment unit, resistance R1, two Pole pipe D6, sampling unit, reference cell and afterflow unit, wherein:

The emitter of the first transistor is grounded, the first crystal pipe collector by resistance R1 connections power supply just Pole, the collector of the first transistor are also connected with the input terminal of third transistor (grid or base stage) and energy storage delay unit Input terminal, the third transistor ground terminal (source electrode or emitter) ground connection, the third transistor output end (drain electrode or Collector) base stage of the second transistor is connected by the diode D6, the base stage of the second transistor is also connected with institute The output end of energy storage delay unit is stated, the collector of the second transistor connects the positive pole or the connection third is brilliant The output end of body pipe, the ground terminal ground connection of the energy storage delay unit, the emitter of the second transistor pass through the threshold value Adjustment unit connects the base stage of the first transistor, and the third transistor output end (drain electrode or collector) is used as the electricity Pressure adjusts the output end of chip, the exciting current for controlling generator;The sampling unit connection positive pole and ground, it is described The output end of sampling unit connects the base stage of the first transistor by the reference cell, and the afterflow unit is connected to institute It states between third transistor output end and positive pole;

When generator power supply cathode voltage is less than setting value and when the third transistor normally, the energy storage is prolonged Shi Danyuan energy storage, the base voltage of the second transistor be pulled low make the second transistor, the threshold adjustment unit and The first transistor is turned off;When generator power supply cathode voltage is higher than setting value, the sampling unit output voltage is logical The reference cell driving the first transistor conducting is crossed, makes the third transistor cut-off cut-out exciting current, when the energy storage So that the second transistor is ended at the end of the energy storage release of delay unit and then keeps the first transistor cut-off described simultaneously The energy storage of energy storage delay unit, the first transistor cut-off also promote the third transistor to be connected, and pass through the positive feedback of circuit Effect makes the third transistor attempt to quickly enter saturation conduction state:If positive pole voltage described the less than if setting value Three transistors enter normal saturation conduction state, the sampling unit output electricity if positive pole voltage is persistently higher than setting value Pressure drives the first transistor conducting to make the third transistor cut-off cut-out exciting current by the reference cell;When described When three transistor overcurrents cause the third transistor saturation voltage drop to be more than the threshold adjustment unit on state threshold voltage, come from The output end voltage of energy storage delay unit makes the second transistor generate base current, the emitter electricity of the second transistor Stream drives the first transistor conducting that the third transistor is made to end and is protected, when the energy storage of the energy storage delay unit discharges At the end of so that the second transistor is ended so that make the first transistor cut-off energy storage delay unit energy storage simultaneously, The first transistor cut-off also promotes the third transistor to be connected, and makes the third crystal by the positive feedback effect of circuit Pipe attempts to quickly enter saturation conduction state:If if overcurrent release if the third transistor enter normal saturation conduction state, Continuing overcurrent, then the excessively high saturation voltage drop of the third transistor drives first by the emitter current of the second transistor Transistor turns make the third transistor cut-off continue to be protected.

The utility model has the beneficial effects that above-mentioned voltage adjusts simple chip circuit structure, small, high pressure, tool Have that overcurrent protection function, temperature tolerance be good, at low cost, wide adaptation range, is the low mistake of generator throw load of high reliability of new generation Three crystal overcurrent protective A circuit voltages of pressure area adjust chip.

Description of the drawings

Fig. 1 is three crystal overcurrent protective A of the low overpressure zone of the first throw load that the utility model embodiment provides Circuit voltage adjusts chip circuit structure schematic diagram;

Fig. 2 is three crystal overcurrent protective A of the low overpressure zone of the first throw load that the utility model embodiment provides Circuit voltage adjusts the another form of electrical block diagram of chip;

Fig. 3 is three crystal overcurrent protective A of the low overpressure zone of the first throw load that the utility model embodiment provides Circuit voltage adjusts the electrical block diagram of another form of chip;

Fig. 4 is three crystal overcurrent protective A of the low overpressure zone of second of throw load that the utility model embodiment provides Circuit voltage adjusts chip circuit structure schematic diagram;

Fig. 5 is three crystal overcurrent protective A of the low overpressure zone of second of throw load that the utility model embodiment provides Circuit voltage adjusts the another form of electrical block diagram of chip;

Fig. 6 is three crystal overcurrent protective A of the low overpressure zone of the third throw load that the utility model embodiment provides Circuit voltage adjusts chip circuit structure schematic diagram;

Fig. 7 is three crystal overcurrent protective A of the low overpressure zone of the third throw load that the utility model embodiment provides Circuit voltage adjusts the another form of electrical block diagram of chip;

Fig. 8 is " the three crystal overcurrent protective A circuit voltages adjusting of the low overpressure zone of throw load provided by the utility model Chip " generator output voltage waveform and a kind of voltage of the prior art in throw load adjust chip generator in throw load Output voltage waveforms contrast schematic diagram.

Specific implementation mode

Mentality of designing according to the present utility model is designed with overcurrent protection function, is thrown using small numbers of element Load overvoltage area is relatively low, resistance to back-pressure is compared with high, heat resistance is good, circuit is simple, area occupied is small and lower-cost voltage is adjusted Chip is applied in A circuit generators as used in voltage automatic adjustment.

In a first aspect, the utility model embodiment provides three crystal overcurrent protections of the low overpressure zone of the first throw load Type A circuit voltages adjust chip.

Embodiment 1

As shown in Figure 1, the three crystal overcurrent protective A circuit voltages for the low overpressure zone of the first throw load adjust chip, Its design feature includes,

The first transistor 1 (Q1), second transistor 2 (Q2), third transistor 3 (Q3), energy storage delay unit 5, threshold value tune Whole unit 4, resistance R1, sampling unit 7, reference cell 8 and afterflow unit 9, wherein:

The emitter of the first transistor Q1 is grounded, and first crystal pipe collector is by resistance R1 connection positive pole B+, and the The collector of one transistor is also connected with the input terminal of input terminal (grid) and energy storage delay unit 5 of third transistor Q3, third The output end (drain electrode) of ground terminal (source electrode) ground connection (i.e. E, the same below) of transistor Q3, third transistor Q3 connects the second crystal The collector of pipe Q2, the output end of the base stage connection energy storage delay unit 5 of second transistor Q2, the ground connection of energy storage delay unit 5 End ground connection, the emitter of second transistor Q2 connect the base of the first transistor Q1 by threshold adjustment unit 4 (i.e. voltage-stabiliser tube D4) Pole, third transistor Q3 output ends F (drain electrode) adjust the output end of chip as voltage, the excitation electricity for controlling generator Stream;When third transistor Q3 is using double pole triode, Darlington transistor or IGBT, corresponding input terminal is base stage, ground connection End is emitter, output end is collector (the same below);Energy storage delay unit 5 therein has diode D5, resistance R5 and electricity Hold C5, the cathode of diode D5 connects one end of one end and capacitance C5 of resistance R5 simultaneously, and the anode of diode D5 is as energy storage The input terminal of delay unit, the ground terminal of the other end of capacitance C5 as energy storage delay unit, the other end of resistance R5 is as storage The output end of energy delay unit;Sampling unit 7 includes resistance R71, R72 and capacitance C7, and resistance R71, R72 are connected in series in power supply Between positive and negative anodes, the connecting node of resistance R71 and resistance R72 is sampling unit output end, and the resistance R71 other ends are connecting power supply just Pole, resistance R72 other ends ground connection, capacitance C7 and resistance R72 are connected in parallel, and the output end of sampling unit 7 passes through reference cell 8 The base stage of zener diode D8 connection the first transistors, it is defeated that afterflow unit 9 (sustained diode 9) is connected to third transistor Q3 Between outlet and positive pole B+.

The course of work of circuit is:

When B+ terminal voltages are less than setting value (Vset) and third transistor Q3 normallies connection exciting current, at this time The zener diode D8 of reference cell 8 ends, then transistor Q1 should be cut-off state, and positive pole B+ is capacitance C5 through resistance R1 Charging energy-storing, since power tube Q3 is connected, drain electrode saturation voltage drop is very low (general ambipolar generally in 0.1V~1.0V ranges Transistor or IGBT saturation voltage drops are more slightly higher, but still the voltage stabilizing value less than voltage-stabiliser tube D4), and the collector of second transistor Q2 Voltage is dragged down by it, and second transistor Q2 collector junction positively biaseds make the emitter current of second transistor be 0, and the first transistor is therefore Cut-off, such third transistor Q3 saturation conductions are stable state.

When leading to third transistor overcurrent due to loading overload or short circuit etc. Exciting Windings for Transverse Differential Protection, second transistor Q2's Collector junction can occur reverse-biased (reverse bias), emitter meeting output voltage U2e, as power tube Q3 drain voltages increase, three poles Pipe Q2 collector voltages also increase, and triode Q2 emitter voltages Ue2 is also increased, when the Ue2 is elevated above adjusting thresholds When the on state threshold voltage of unit voltage-stabiliser tube D4, the emitter current driving the first transistor Q1 conductings of triode Q2 keep third brilliant Body pipe Q3, which ends, to be protected, and there is positive feedback process in this course:Q1 base potentials ↑ → Q1 collector potentials ↓ → Q3 Grid potential ↓ → Q3 drain potentials ↑ → Q2 collector potentials ↑ → Q2 emitter potentials ↑ → D4 → Q1 base potentials ↑, this is strong It is power tube Q3 cut-off states that strong positive feedback process, which makes circuit drastically overturn, simultaneously because Q1 conductings make diode D5 end, electricity Hold C5 Q2 continued as by resistance R5 electric discharge base current is provided, then so that Q1 is still connected by D4, Q3 it is still off, but Q3 Cut-off state is temporary stable state, because at the end of the storage capacitor C5 electric energy release of energy storage delay unit 5, second transistor Q2 meetings End and then the first transistor Q1 is made to end, while 5 energy storage of energy storage delay unit, the first transistor Q1 cut-offs also promote third Transistor Q3 conductings, by the positive feedback effect of circuit, positive feedback process is:Lead to Q2 since C5 discharge currents are gradually reduced Base potential ↓ → Q2 emitter potentials ↓ → D4 → Q1 base potentials ↓ → Q1 collector potentials ↑ → Q3 grid potentials ↑ → Q3 drain electrodes Current potential ↓ → Q2 collector potentials ↓ → Q2 emitter potentials ↓ → D4 → Q1 base potentials ↓, make third transistor Q3 attempt rapidly into Enter saturation conduction state:If overcurrent, which releases third transistor Q3, enters normal saturation conduction state, the third crystalline substance if continuing overcurrent Saturation voltage drop Uds excessively high body pipe Q3 drives the first transistor Q1 conductings to make third by the emitter current of second transistor Q2 Transistor Q3 cut-offs continue to be protected.

It can be readily appreciated that current-limiting resistance can also be serially connected on the emitter circuit of second transistor, to limit crystalline substance Body pipe is operating current, but can not also go here and there current-limiting resistance, utilizes the method limit of the base current of resistance R5 limitation triodes Q2 Its collector current is made, because collector current Ic=the β Ib, Ib of Q2 are the base current of Q2, β is direct current amplification factor.

When B+ terminal voltages are higher than setting value (Vset), connecting node, that is, sampling unit of resistance R71 and resistance R72 is defeated Go out terminal voltage makes the first transistor Q1 generate base current by zener diode D8, therefore Q1 conductings make third transistor Q3 cut Exciting current is only cut off, then so that transistor Q3 is reverted to conducting again with one temporary stability time of experience as set out above and encourages The stable state of magnetic.

In above-mentioned voltage adjustment process, if generator output voltage is more than setting value Vset, sampling unit output end Voltage can enable triode Q1 be connected by voltage-stabiliser tube D8, so that power tube Q3 is kept cut-off, (will not generate electricity in overvoltage condition in this way Machine output voltage is already higher than the case where setting value Vset) under emergent power pipe conducting excitation chance, bring in this way one it is bright Aobvious advantageous effect is:Generator can lead to generator in the case of throw load due to rotor remanent magnetism, stator self inductance etc. There is " Unloading Voltage " excessively high phenomenon, this Unloading Voltage is larger to generator and peripheral power receiving circuit harm, is power generation Machine and voltage regulator industry is paid close attention to the most and insoluble technical problem, existing many voltage regulator chips are in overvoltage When there is " the power tube conducting chance " of " overpressure zone " so that over-pressed " Unloading Voltage " overpressure zone increases originally, from The subtriangular region that laminate section surrounds of crossing that Unloading Voltage peak value terminates to decaying is referred to as " overpressure zone ", such as Fig. 8 Upper figure, the region that figure midpoint A, B, C are surrounded is overpressure zone, and the adjusting of frequency excitation generator voltage is determined in a kind of as existing import Device throw load in output generator current 40A, generator output voltage oscillogram rebound electric at the throw load moment Pressure reaches VH1, and the over-pressed duration is t3-t1.

And figure below adjusts chip on same generator, same output by the voltage that the utility model embodiment provides Throw load generator output voltage oscillogram when electric current 40A, it is seen that when throw load moment bounce voltage is VH2, and overvoltage continues Between be t2-t1, it is clear that t3-t1 > t2-t1, VH1 > VH2, this is the outstanding beneficial technique effect that the utility model is brought.This Sample, the reduction of generator throw load bounce voltage amplitude, decreased duration, figure midpoint a, b, c, the apparent area in overpressure zone surrounded Less than the overpressure zone that point A, B, C of upper figure are surrounded, i.e. point a, b, c, the overpressure zone that surrounds are " low overpressure zone ".

It is found by adjusting chip actual measurement to many existing imports and domestic voltage, in same motor, same test condition Under:Most chip throw loads overpressure zone is higher, i.e., overpressure peak is higher, the over-pressed time is longer, such as 7 foot 14V electricity of import Pressure adjusts chip, and when 40A busts are 2A (accumulator does not turn off), its throw load overpressure peak is more than 22V, overpressure zone up to 200mS Time.Under identical conditions, the 14V voltages of technical solutions of the utility model are adjusted into chip and are tested:It is 2A in 40A busts Its throw load overpressure peak is 16.6~17.5V when (accumulator does not turn off), the overpressure zone time is not more than the 120mS times.

This is beneficial to reduce Unloading Voltage to rectifier bridge avalanche diode, voltage adjusting chip, vehicle electric power storage by apparent The overvoltage harm in pond, vehicle computer board, instrument board, other vehicle electronics modules improves generator and vehicle operational reliability, drop Less trouble.

Embodiment 2

On the basis of above-described embodiment 1, embodiment further provides a kind of low overpressure zones of throw load for the utility model Three crystal overcurrent protective A circuit voltages adjust chip, as shown in Fig. 2, the second crystal of circuit circuit shown in above-mentioned Fig. 1 The collector loop of pipe Q2 enters diode 6 (D6) and resistance R6, and the anode of diode D6 connects second transistor Q2 current collections simultaneously The other end of one end of pole and resistance R6, the cathode connection third transistor Q3 output ends (drain electrode) of diode D6, resistance R6 connects Connect the output end of third transistor Q3.Its course of work and circuit shown in above-mentioned Fig. 1 are almost the same, only normal in power tube Q3 Triode Q2 collector potentials are dragged down by diode D6 when conducting, triode Q2 collector potentials are by diode D6 clampers at this time For low level, therefore triode Q2 emitter potentials are insufficient to allow voltage-stabiliser tube D4 to be connected, this is the stable state of power tube conducting, works as power When pipe Q3 drain potentials increase, the collector potential of triode Q2 is set to increase by resistance R6, triode Q2 emitter potentials Ue2 Also it increases, when Ue2 rises to over voltage-stabiliser tube D4 conduction thresholds, triode Q1 conductings make power tube Q2 end, circuit Into temporary stable state.

Embodiment 3

Equally on the basis of above-described embodiment 1, embodiment further provides a kind of low overvoltages of throw load for the utility model The three crystal overcurrent protective A circuit voltages in area adjust chip, as shown in figure 3, the second of circuit circuit shown in above-mentioned Fig. 1 The collector loop of transistor Q2 seals in diode D6, also adds resistance R6, connection second is brilliant simultaneously for the anode of diode D6 One end of body pipe Q2 collectors and resistance R6, the cathode connection third transistor Q3 output ends (drain electrode) of diode D6, resistance R6 The other end connect positive pole.Its course of work is also almost the same with circuit shown in above-mentioned Fig. 1, only normal in power tube Q3 Triode Q2 collector potentials are dragged down by diode D6 when conducting, triode Q2 collector potentials are by diode D6 clampers at this time For low level, therefore triode Q2 emitter potentials are insufficient to allow voltage-stabiliser tube D4 to be connected, this is the stable state of power tube conducting, works as power When pipe Q3 drain potentials increase, by the clamper of diode D6, triode Q2 collector potentials are made to increase by resistance R6, triode Q2 emitters output current potential Ue2 is also increased, when Ue2 rises to over voltage-stabiliser tube D4 conduction thresholds, triode Q1 conductings, Power tube Q2 is set to end, circuit enters temporary stable state.

It is illustrated by above-described embodiment 1,2,3, it can be deduced that:

When generator power supply cathode voltage is less than setting value and when third transistor normally excitation, energy storage delay is single The emitter current of first energy storage, second transistor makes the first transistor end for 0;When generator power supply cathode voltage is higher than setting When value, sampling unit output voltage drives the first transistor to be connected by reference cell, makes third transistor cut-off cut-out excitation Electric current makes second transistor end and then makes the first transistor cut-off simultaneously at the end of the energy storage release of energy storage delay unit The energy storage of energy storage delay unit, the first transistor cut-off also promote third transistor to be connected, and make the by the positive feedback effect of circuit Three transistors attempt to quickly enter saturation conduction state:Enter normally less than third transistor if setting value if positive pole voltage Saturation conduction state, sampling unit output voltage passes through reference cell driving the if positive pole voltage is persistently higher than setting value One transistor turns make third transistor cut-off cut-out exciting current;When third transistor overcurrent causes third transistor saturation pressure When drop is more than threshold adjustment unit on state threshold voltage, the emitter current driving the first transistor conducting of second transistor makes the Three transistor cutoffs are protected, and so that second transistor is ended at the end of the energy storage release of energy storage delay unit and then are made the The energy storage delay unit energy storage simultaneously of one transistor cutoff, the first transistor cut-off also promote third transistor to be connected, and pass through circuit Positive feedback effect make third transistor attempt to quickly enter saturation conduction state:Third transistor enters just if overcurrent releases Normal saturation conduction state, the emitter current that the excessively high saturation voltage drop of third transistor passes through second transistor if continuing overcurrent Driving the first transistor conducting makes third transistor cut-off continue to be protected.

Second aspect, the utility model embodiment provide three crystal overcurrent protections of the low overpressure zone of second of throw load Type A circuit voltages adjust chip.

Embodiment 4

As shown in figure 4, the three crystal overcurrent protective A circuit voltages for the low overpressure zone of second of throw load adjust chip, Its design feature includes, the first transistor 1 (Q1), second transistor 2 (Q2), third transistor (Q3), energy storage delay unit 5, Threshold adjustment unit 4, resistance R1 and diode 6 (D6), sampling unit 7, reference cell 8 and afterflow unit 9, wherein:

The emitter of the first transistor Q1 is grounded, and the first transistor Q1 collectors are by resistance R1 connection positive poles, and the The collector of one transistor Q1 is also connected with the input terminal of input terminal (grid) and energy storage delay unit 5 of third transistor Q3, the The ground terminal (source electrode) of three transistor Q3 is grounded, and the output end (drain electrode) of third transistor Q3 is brilliant by diode D6 connections second The emitter of body pipe Q2, the output end of the base stage connection energy storage delay unit 5 of second transistor Q2, the current collection of second transistor Q2 Pole connects the output end (see Fig. 5) of positive pole B+ (see Fig. 4) or connection third transistor Q3, the ground connection of energy storage delay unit 5 End ground connection, the emitter of second transistor Q2 by the base stage of the voltage-stabiliser tube D4 connection the first transistors Q1 of threshold adjustment unit 4, The output end (drain electrode) of third transistor Q3 adjusts the output end of chip, the exciting current for controlling generator as voltage; There is energy storage delay unit 5 therein diode D5, resistance R5 and capacitance C5, the cathode of diode D5 to connect resistance R5's simultaneously One end of one end and capacitance C5, the input terminal of the anode of diode D5 as energy storage delay unit, the other end conduct of capacitance C5 The ground terminal of energy storage delay unit, the output end of the other end of resistance R5 as energy storage delay unit.

Sampling unit 7 includes resistance R71, R72 and capacitance C7, and resistance R71, R72 are connected in series between power positive cathode, The connecting node of resistance R71 and resistance R72 is sampling unit output end, and the resistance R71 other ends connect positive pole, resistance R72 The other end is grounded, and capacitance C7 and resistance R72 be connected in parallel, the zener diode that the output end of sampling unit 7 passes through reference cell 8 The base stage of D8 connection the first transistors, afterflow unit 9 (sustained diode 9) are connected to third transistor Q3 output ends and power supply Between positive B+.

The course of work of circuit is:

When B+ terminal voltages are less than setting value (Vset) and third transistor Q3 normallies connection exciting current, at this time The zener diode D8 cut-offs of reference cell 8, the capacitance C5 charging energy-storings of energy storage delay unit 5, charge path are:Positive pole B+ → resistance R1 → diode D5 → capacitance C5 → ground, third transistor Q3 conductings, drain electrode is low potential (general field-effect tube Saturation voltage drop is 0.1~1.0V), the emitting voltage of second transistor is dragged down by diode D6, is not enough to reach threshold value tune The conduction threshold of zener diode D4 in whole unit 4 makes the first transistor Q1 end, and Q3 saturation conductions connect exciting current, should State is stable state.

When leading to third transistor Q3 overcurrents due to loading overload or short circuit etc. Exciting Windings for Transverse Differential Protection, excessive work electricity Stream will cause larger saturation voltage drop in its internal resistance, over the ground for its drain potential can than being increased when normally, when When rising to over voltage-stabiliser tube D4 conduction thresholds, the emitter current of the reverse-biased cut-offs of diode D6, second transistor Q2 can drive The first transistor Q1 conductings, make its collector export low potential, diode D5 cut-offs, and capacitance C5 passes through resistance R5 → Q2 emitter junctions → D4 → Q1 emitter junctions → ground discharges, and Q1 conductings also end third transistor Q3 to be protected, when energy storage delay unit C5 energy storage release at the end of make second transistor Q2 end so that make the first transistor Q1 cut-off simultaneously energy storage delay unit 5 Capacitance C5 continue energy storage, the first transistor Q1 restores cut-off, third transistor Q3 is also promoted to be connected, pass through the positive feedback of circuit Effect makes third transistor Q3 attempt to quickly enter saturation conduction state:Third transistor Q3 enters normal full if overcurrent releases The emitter current that saturation voltage drop with conducting state, excessively high third transistor Q3 if continuing overcurrent passes through second transistor Q2 Driving the first transistor conducting Q1 makes third transistor Q3 cut-offs continue to be protected.

It can be readily appreciated that current limiting electricity can also be concatenated on the collector loop or emitter circuit of second transistor Resistance, is operating current with limit transistor, but can not also go here and there current-limiting resistance, utilizes the ground level electricity of resistance R5 limitation triodes Q2 The method of stream limits its collector current.

When B+ terminal voltages are higher than setting value (Vset), connecting node, that is, sampling unit of resistance R71 and resistance R72 is defeated Go out terminal voltage makes the first transistor generate base current by zener diode D8, and the first transistor Q1 conductings is made to make third crystal Pipe Q3 cut-off cut-out exciting current then makes transistor Q3 revert to conducting again with experience temporary stability time as set out above The stable state of excitation.

In above-mentioned voltage adjustment process, similarly with previous embodiment 1, if generator output voltage is more than setting value Vset, then sampling unit output end voltage can be enabled by voltage-stabiliser tube D8 triode Q1 be connected, make power tube Q3 keep cut-off, in this way Excitation will not be connected by emergent power pipe under overvoltage condition (i.e. generator output voltage is already higher than the case where setting value Vset) Chance, bring an apparent advantageous effect to be in this way:Generator is in the case of throw load, due to rotor remanent magnetism, stator The reasons such as self-induction can cause generator occur " Unloading Voltage " excessively high phenomenon, this Unloading Voltage to generator and periphery by Circuit harm is larger, is that generator and voltage regulator industry are paid close attention to and insoluble technical problem the most, it is existing very There is " power tube conducting chance " in multivoltage regulator chip so that over-pressed " Unloading Voltage " mistake originally in overvoltage Pressure area increases, and such as the upper figure of Fig. 8, a kind of as existing import determines frequency excitation generator voltage regulator and exports electricity in generator When flowing 40A in the case of throw load, generator output voltage oscillogram reaches VH1 in throw load moment bounce voltage, crosses and press The continuous time is t3-t1.

And figure below adjusts chip on same generator, same output by the voltage that the utility model embodiment provides Throw load generator output voltage oscillogram when electric current 40A, it is seen that when throw load moment bounce voltage is VH2, and overvoltage continues Between be t2-t1, it is clear that t3-t1 > t2-t1, VH1 > VH2, this is the outstanding beneficial technique effect that the utility model is brought.This Sample, generator throw load bounce voltage amplitude reduce, decreased duration, i.e. " low overpressure zone ", from Unloading Voltage peak value to What decaying terminated, which cross the subtriangular region that surrounds of laminate section, is referred to as " overpressure zone ", by many existing imports and domestic Voltage adjusts chip actual measurement and finds, under same motor, same test condition:Most chip throw loads overpressure zone is higher, I.e. overpressure peak is higher, the over-pressed time is longer, is that (accumulator is or not 2A in 40A busts if 7 foot 14V voltages of import adjust chip Disconnect) when its throw load overpressure peak be more than 22V, overpressure zone up to the 200mS times.Under identical conditions, by the utility model skill The 14V voltages of art scheme adjust chip and are tested:Its throw load overpressure peak when 40A busts are 2A (accumulator does not turn off) It is not more than the 120mS times for 16.6~17.5V, overpressure zone time.

This is beneficial to reduce Unloading Voltage to rectifier bridge avalanche diode, voltage adjusting chip, vehicle electric power storage by apparent The overvoltage harm in pond, vehicle computer board, instrument board, other vehicle electronics modules improves generator and vehicle operational reliability, drop Less trouble.

Embodiment 5

Embodiment further provides a kind of three crystal overcurrent protective A circuit electricity of the low overpressure zone of throw load for the utility model Pressure adjusts chip, as shown in figure 5, the circuit is by the collector reconfiguration of the second transistor Q2 of circuit shown in above-mentioned Fig. 4 to power The output end of pipe Q3, the course of work is also almost the same with circuit shown in above-mentioned Fig. 4, the difference is that overcurrent protection is started to control a little It is more late than circuit shown in Fig. 4, this is because being that the base current that triode 1 provides mostlys come from power tube Q3 by Q2 and D4 Excessively high saturation voltage drop when overcurrent, the saturation voltage drop, can be according to not again below supply voltage B+ in the initially raising phase It is suitble to select Fig. 4 or Fig. 5 circuits with the power tube of conducting internal resistance and different saturation voltage drops, so that the properties of product designed become It is excellent.

Pass through the elaboration of above-described embodiment 4 and 5, it can be deduced that:

When generator power supply cathode voltage is less than setting value and when third transistor normally excitation, energy storage delay is single First energy storage, the emitter voltage of second transistor, which is pulled low, makes threshold adjustment unit and the first transistor end;When power generation is electromechanical When source cathode voltage is higher than setting value, sampling unit output voltage drives the first transistor to be connected by reference cell, makes third Transistor cutoff cuts off exciting current, so that second transistor is ended at the end of the energy storage release of energy storage delay unit and then makes The first transistor cut-off energy storage delay unit energy storage simultaneously, the first transistor cut-off also promote third transistor to be connected, and pass through electricity The positive feedback effect on road makes third transistor attempt to quickly enter saturation conduction state:If positive pole voltage less than if setting value Third transistor enters normal saturation conduction state, the sampling unit output voltage if positive pole voltage is persistently higher than setting value The first transistor conducting is driven to make third transistor cut-off cut-out exciting current by reference cell;When third transistor overcurrent causes When third transistor saturation voltage drop being made to be more than threshold adjustment unit on state threshold voltage, the emitter current driving of second transistor The first transistor conducting makes third transistor end to be protected, and makes the second crystalline substance at the end of the energy storage release of energy storage delay unit Body pipe ends and then the first transistor cut-off energy storage delay unit energy storage simultaneously, the first transistor cut-off is made also to promote third brilliant Body pipe is connected, and makes third transistor attempt to quickly enter saturation conduction state by the positive feedback effect of circuit:If overcurrent releases Then into normal saturation conduction state, if continuing overcurrent, the excessively high saturation voltage drop of third transistor passes through second to third transistor The emitter current driving the first transistor conducting of transistor makes third transistor cut-off continue to be protected.

The third aspect, the utility model embodiment provide three crystal overcurrent protections of the low overpressure zone of the third throw load Type A circuit voltages adjust chip.

Embodiment 6, embodiment 7

As shown in Figure 6 and Figure 7, it is the three crystal overcurrent protective A circuit voltages adjusting of the low overpressure zone of the third throw load Chip, design feature include the first transistor 1 (Q1), second transistor 2 (Q2), third transistor 3 (Q3), energy storage delay Unit 5, threshold adjustment unit 4, resistance R1, diode 6 (D6), sampling unit 7, reference cell 8 and afterflow unit 9, wherein:

The emitter of the first transistor Q1 is grounded, the first transistor Q1 collectors by resistance R1 connection positive pole B+, The collector of the first transistor Q1 is also connected with the input terminal of input terminal (grid) and energy storage delay unit 5 of third transistor Q3, The ground terminal (source electrode) of third transistor Q3 is grounded, and the output end (drain electrode) of third transistor Q3 passes through diode D6 connections second The base stage of transistor Q2, the base stage of second transistor Q2 are also connected with the output end of energy storage delay unit 5, the collection of second transistor Q2 Electrode connects the output end F (Fig. 6) of positive pole B+ (Fig. 7) or connection third transistor Q3, the ground terminal of energy storage delay unit 5 Ground connection, the emitter of second transistor Q2 connect the base of the first transistor Q1 by threshold adjustment unit 4 (zener diode D8) Pole, the output end that third transistor Q3 output ends (drain electrode or collector) adjust chip as voltage, for controlling generator Exciting current;There is energy storage delay unit 5 therein diode D5, resistance R5 and capacitance C5, the cathode of diode D5 to connect simultaneously One end of one end and capacitance C5 of connecting resistance R5, the input terminal of the anode of diode D5 as energy storage delay unit, capacitance C5's Ground terminal of the other end as energy storage delay unit, the output end of the other end of resistance R5 as energy storage delay unit.

Sampling unit 7 includes resistance R71, R72 and capacitance C7, and resistance R71, R72 are connected in series between power positive cathode, The connecting node of resistance R71 and resistance R72 is sampling unit output end, and the resistance R71 other ends connect positive pole, resistance R72 The other end is grounded, and capacitance C7 and resistance R72 be connected in parallel, the zener diode that the output end of sampling unit 7 passes through reference cell 8 The base stage of D8 connection the first transistors, afterflow unit 9 (sustained diode 9) are connected to third transistor Q3 output ends and power supply Between positive B+.

The course of work of circuit is:

When B+ terminal voltages are less than setting value (Vset) and third transistor Q3 normallies connection exciting current, at this time The zener diode D8 cut-off of reference cell 8, the capacitance C5 charging energy-storings of energy storage delay unit 5, charge path as hereinbefore, Third transistor Q3 conductings, drain electrode are low potential (general field-effect tube saturation voltage drop is 0.1~1.0V), pass through diode D6 The base potential of second transistor Q2 is dragged down, the emitter voltage of second transistor Q2 is also pulled low, and is not enough to reach threshold value The conduction threshold of zener diode D4 in adjustment unit 4 makes the first transistor Q1 end, Q3 saturation conductions, which is stable state.

When third transistor Q3 overcurrents make third transistor saturation voltage drop be more than the D4 conduction threshold electricity of threshold adjustment unit When pressure, second transistor Q2 conductings:

In figure 6:The emitter current of Q2 includes base current Ib2, and source is capacitance C5 anodes → resistance R5 → Q2 Emitter junction, also includes Q2 collector current Ic2, and path source is saturation voltage drop Uds → Q2 collection that power tube Q3 drains excessively high Electrode → Q2 emitters, general collector current manyfold bigger than base current reasonably select resistance R5, can limit three poles The collector current of pipe Q2 is unlikely to the permissible value beyond Q2, that is, foundation Ic2=β Ib2, wherein β are direct current amplification factor.

In the figure 7:The emitter current of Q2 includes base current Ib2, and source is capacitance C5 anodes → resistance R5 → Q2 Emitter junction also includes Q2 collector current Ic2, and path source is positive pole B+ → Q2 collectors → Q2 emitters, generally Collector current manyfold bigger than base current reasonably selects resistance R5, can limit the collector current of triode Q2 not It is direct current amplification factor as the permissible value beyond Q2, that is, according to Ic2=β Ib2, wherein β.

The emitter current driving the first transistor Q1 conductings of the second transistor Q2 of above-mentioned two figure, collector output are low Current potential, diode D5 cut-offs, capacitance C5 are discharged by resistance R5 → Q2 emitter junctions → D4 → Q1 emitter junctions → ground, Q1 conductings Also end third transistor Q3 to be protected, so that second transistor Q2 is cut at the end of the C5 energy storage release of energy storage delay unit Only and then the capacitance C5 of the first transistor Q1 cut-offs while energy storage delay unit 5 is made to continue energy storage, the first transistor Q1 recoveries section Only, also promote third transistor Q3 to be connected, make third transistor Q3 attempt to quickly enter saturation by the positive feedback effect of circuit Conducting state:Third transistor Q3 enters normal saturation conduction state, the third transistor if continuing overcurrent if overcurrent releases Saturation voltage drop excessively high Q3 drives the first transistor that Q1 is connected by the emitter current of second transistor Q2 makes third transistor Q3 cut-offs continue to be protected.

It can be readily appreciated that current limiting electricity can also be concatenated on the collector loop or emitter circuit of second transistor Resistance, with the operating current of limit transistor.In threshold adjustment unit that can also be in the above-described embodiments or the first transistor Base loop or on be serially connected with current-limiting resistance, with the operating current of further limit transistor.

In above-mentioned voltage adjustment process, if generator output voltage is more than setting value Vset, sampling unit output end Voltage can enable triode Q1 be connected by voltage-stabiliser tube D8, so that power tube Q3 is kept cut-off, (will not generate electricity in overvoltage condition in this way Machine output voltage is already higher than the case where setting value Vset) under emergent power pipe conducting excitation chance, bring in this way one it is bright Aobvious advantageous effect is:Generator can lead to generator in the case of throw load due to rotor remanent magnetism, stator self inductance etc. There is " Unloading Voltage " excessively high phenomenon, this Unloading Voltage is larger to generator and peripheral power receiving circuit harm, is power generation Machine and voltage regulator industry is paid close attention to the most and insoluble technical problem, existing many voltage regulator chips are in overvoltage When there is " power tube conducting chance " so that over-pressed " Unloading Voltage " overpressure zone increases originally, such as the upper figure of Fig. 8, Frequency excitation generator voltage regulator throw load in output generator current 40A is determined in a kind of as existing import, Generator output voltage oscillogram reaches VH1 in throw load moment bounce voltage, and the over-pressed duration is t3-t1.

And figure below adjusts chip on same generator, same output by the voltage that the utility model embodiment provides Throw load generator output voltage oscillogram when electric current 40A, it is seen that when throw load moment bounce voltage is VH2, and overvoltage continues Between be t2-t1, it is clear that t3-t1 > t2-t1, VH1 > VH2, this is the outstanding beneficial technique effect that the utility model is brought.This Sample, generator throw load bounce voltage amplitude reduce, decreased duration, i.e. " low overpressure zone ", from Unloading Voltage peak value to What decaying terminated, which cross the subtriangular region that surrounds of laminate section, is referred to as " overpressure zone ", by many existing imports and domestic Voltage adjusts chip actual measurement and finds, under same motor, same test condition:Most chip throw loads overpressure zone is higher, I.e. overpressure peak is higher, the over-pressed time is longer, is that (accumulator is or not 2A in 40A busts if 7 foot 14V voltages of import adjust chip Disconnect) when its throw load overpressure peak be more than 22V, overpressure zone up to the 200mS times.Under identical conditions, by the utility model skill The 14V voltages of art scheme adjust chip and are tested:Its throw load overpressure peak when 40A busts are 2A (accumulator does not turn off) It is not more than the 120mS times for 16.6~17.5V, overpressure zone time.

This is beneficial to reduce Unloading Voltage to rectifier bridge avalanche diode, voltage adjusting chip, vehicle electric power storage by apparent The overvoltage harm in pond, vehicle computer board, instrument board, other vehicle electronics modules improves generator and vehicle operational reliability, drop Less trouble.

Pass through the elaboration of above-described embodiment 6,7, it can be deduced that:

When generator power supply cathode voltage is less than setting value and when third transistor normally excitation, energy storage delay is single First energy storage, the base voltage of second transistor, which is pulled low, makes second transistor, threshold adjustment unit and the first transistor be turned off; When generator power supply cathode voltage is higher than setting value, sampling unit output voltage drives the first transistor to lead by reference cell It is logical, make third transistor cut-off cut-out exciting current, so that second transistor is cut at the end of the energy storage release of energy storage delay unit Only and then the first transistor cut-off energy storage delay unit energy storage simultaneously, the first transistor cut-off is made also third transistor to be promoted to lead It is logical, make third transistor attempt to quickly enter saturation conduction state by the positive feedback effect of circuit:If positive pole voltage is low In setting value, then third transistor samples list into normal saturation conduction state, if positive pole voltage is persistently higher than setting value First output voltage drives the first transistor conducting to make third transistor cut-off cut-out exciting current by reference cell;When third crystalline substance When body pipe overcurrent causes third transistor saturation voltage drop to be more than threshold adjustment unit on state threshold voltage, energy storage delay unit is come from Output end voltage make second transistor generate base current, second transistor emitter current driving the first transistor conducting Make third transistor end to be protected, so that second transistor is ended, in turn at the end of the energy storage release of energy storage delay unit Make the first transistor cut-off energy storage delay unit energy storage simultaneously, the first transistor cut-off also third transistor be promoted to be connected, passes through The positive feedback effect of circuit makes third transistor attempt to quickly enter saturation conduction state:If overcurrent release if third transistor into Enter normal saturation conduction state, the emitter that the excessively high saturation voltage drop of third transistor passes through second transistor if continuing overcurrent Electric current driving the first transistor conducting makes third transistor cut-off continue to be protected.

The embodiments of the present invention are merely to illustrate the technical solution of the utility model, are not the limits to the utility model System, by equivalent replacement and non-creative labour income to other embodiment or other combine obtained embodiments and each fall within Scope of protection of the utility model, the scope of protection of the utility model are defined by the claims.

Claims (3)

1. a kind of three crystal overcurrent protective A circuit voltages of the low overpressure zone of throw load adjust chip, it is characterised in that including:

The first transistor, second transistor, third transistor, energy storage delay unit, threshold adjustment unit, resistance R1, sampling are single Member, reference cell and afterflow unit, wherein:

The emitter of the first transistor is grounded, and the first crystal pipe collector passes through resistance R1 connection positive poles, institute State the first transistor collector be also connected with third transistor input terminal and energy storage delay unit input terminal, the third is brilliant The ground terminal of body pipe is grounded, and the output end of the third transistor connects the collector of the second transistor, and described second is brilliant The base stage of body pipe connects the output end of the energy storage delay unit, and the ground terminal of the energy storage delay unit is grounded, and described second The emitter of transistor connects the base stage of the first transistor, the third transistor output by the threshold adjustment unit Hold the output end that chip is adjusted as the voltage, the exciting current for controlling generator;The sampling unit connects power supply Anode and ground, the output end of the sampling unit connects the base stage of the first transistor by the reference cell, described continuous Stream unit is connected between the third transistor output end and positive pole;

When generator power supply cathode voltage is less than setting value and when the third transistor normally, the energy storage delay is single The emitter current of first energy storage, the second transistor makes the first transistor end for 0;When generator power supply cathode voltage When higher than setting value, the sampling unit output voltage drives the first transistor to be connected by the reference cell, makes described the Three transistor cutoffs cut off exciting current, so that the second transistor is cut at the end of the energy storage release of the energy storage delay unit Only and then the first transistor cut-off energy storage delay unit energy storage simultaneously, the first transistor cut-off is made also to promote The third transistor conducting, makes the third transistor attempt to quickly enter saturation conduction shape by the positive feedback effect of circuit State:If entering normal saturation conduction state, positive pole electricity less than the third transistor if setting value if positive pole voltage Pressure holding is continuous, and higher than setting value, then the sampling unit output voltage drives the first transistor conducting to make institute by the reference cell State third transistor cut-off cut-out exciting current;When the third transistor overcurrent causes the third transistor saturation voltage drop super When crossing the threshold adjustment unit on state threshold voltage, the emitter current driving the first transistor conducting of the second transistor Make the third transistor end to be protected, makes second crystal at the end of the energy storage release of the energy storage delay unit Pipe ends and then makes the first transistor cut-off energy storage delay unit energy storage simultaneously, the first transistor cut-off also Promote the third transistor to be connected, so that the third transistor is attempted to quickly enter saturation and is led by the positive feedback effect of circuit Logical state:The third transistor enters normal saturation conduction state, the third crystalline substance if continuing overcurrent if overcurrent releases The excessively high saturation voltage drop of body pipe drives the first transistor conducting to make the third by the emitter current of the second transistor Transistor cutoff continues to be protected.

2. a kind of three crystal overcurrent protective A circuit voltages of the low overpressure zone of throw load adjust chip, it is characterised in that including:

The first transistor, second transistor, third transistor, energy storage delay unit, threshold adjustment unit, resistance R1, diode D6, sampling unit, reference cell and afterflow unit, wherein:

The emitter of the first transistor is grounded, and the first crystal pipe collector passes through resistance R1 connection positive poles, institute State the first transistor collector be also connected with third transistor input terminal and energy storage delay unit input terminal, the third is brilliant The ground terminal of body pipe is grounded, and the output end of the third transistor connects the hair of the second transistor by the diode D6 Emitter-base bandgap grading, the base stage of the second transistor connect the output end of the energy storage delay unit, the collector of the second transistor Connect the positive pole or the output end of the connection third transistor, the ground terminal ground connection of the energy storage delay unit, institute The emitter for stating second transistor connects the base stage of the first transistor, the third crystal by the threshold adjustment unit Pipe output end adjusts the output end of chip, the exciting current for controlling generator as the voltage;The sampling unit connects Positive pole and ground are connect, the output end of the sampling unit connects the base stage of the first transistor by the reference cell, The afterflow unit is connected between the third transistor output end and positive pole;

When generator power supply cathode voltage is less than setting value and when the third transistor normally, the energy storage delay is single First energy storage, the emitter voltage of the second transistor, which is pulled low, makes the threshold adjustment unit and the first transistor cut Only;When generator power supply cathode voltage is higher than setting value, the sampling unit output voltage is driven by the reference cell The first transistor is connected, and makes the third transistor cut-off cut-out exciting current, when the energy storage of the energy storage delay unit discharges At the end of so that the second transistor is ended so that make the first transistor cut-off energy storage delay unit energy storage simultaneously, The first transistor cut-off also promotes the third transistor to be connected, and makes the third crystal by the positive feedback effect of circuit Pipe attempts to quickly enter saturation conduction state:Enter less than the third transistor if setting value if positive pole voltage and normally satisfies With conducting state, if positive pole voltage is persistently higher than setting value, the sampling unit output voltage passes through the reference cell Driving the first transistor conducting makes the third transistor cut-off cut-out exciting current;When the third transistor overcurrent causes institute When stating third transistor saturation voltage drop more than the threshold adjustment unit on state threshold voltage, the emitter of the second transistor Electric current drives the first transistor conducting that the third transistor is made to end and is protected, when the energy storage of the energy storage delay unit is released End the second transistor at the end of putting and then makes the first transistor cut-off energy storage delay unit storage simultaneously Energy, the first transistor cut-off also promote the third transistor to be connected, and make the third by the positive feedback effect of circuit Transistor attempts to quickly enter saturation conduction state:The third transistor enters normal saturation conduction shape if overcurrent releases State, the excessively high saturation voltage drop of the third transistor is driven by the emitter current of the second transistor if continuing overcurrent The first transistor conducting makes the third transistor cut-off continue to be protected.

3. a kind of three crystal overcurrent protective A circuit voltages of the low overpressure zone of throw load adjust chip, it is characterised in that including:

The first transistor, second transistor, third transistor, energy storage delay unit, threshold adjustment unit, resistance R1, diode D6, sampling unit, reference cell and afterflow unit, wherein:

The emitter of the first transistor is grounded, and the first crystal pipe collector passes through resistance R1 connection positive poles, institute State the first transistor collector be also connected with third transistor input terminal and energy storage delay unit input terminal, the third is brilliant The ground terminal of body pipe is grounded, and the output end of the third transistor connects the base of the second transistor by the diode D6 Pole, the base stage of the second transistor are also connected with the output end of the energy storage delay unit, the collector of the second transistor Connect the positive pole or the output end of the connection third transistor, the ground terminal ground connection of the energy storage delay unit, institute The emitter for stating second transistor connects the base stage of the first transistor, the third crystal by the threshold adjustment unit Pipe output end adjusts the output end of chip, the exciting current for controlling generator as the voltage;The sampling unit connects Positive pole and ground are connect, the output end of the sampling unit connects the base stage of the first transistor by the reference cell, The afterflow unit is connected between the third transistor output end and positive pole;

When generator power supply cathode voltage is less than setting value and when the third transistor normally, the energy storage delay is single First energy storage, the base voltage of the second transistor, which is pulled low, makes the second transistor, the threshold adjustment unit and described The first transistor is turned off;When generator power supply cathode voltage is higher than setting value, the sampling unit output voltage passes through institute Reference cell driving the first transistor conducting is stated, makes the third transistor cut-off cut-out exciting current, when the energy storage is delayed So that the second transistor is ended at the end of the energy storage release of unit and then makes the first transistor cut-off energy storage simultaneously Delay unit energy storage, the first transistor cut-off also promote the third transistor to be connected, and pass through the positive feedback effect of circuit The third transistor is set to attempt to quickly enter saturation conduction state:It is brilliant less than the third if setting value if positive pole voltage Body pipe enters normal saturation conduction state, persistently leads to higher than the sampling unit output voltage if setting value if positive pole voltage Crossing the reference cell driving the first transistor conducting makes the third transistor cut-off cut-out exciting current;When third crystalline substance When body pipe overcurrent causes the third transistor saturation voltage drop to be more than the threshold adjustment unit on state threshold voltage, energy storage is come from The output end voltage of delay unit makes the second transistor generate base current, and the emitter current of the second transistor drives Dynamic the first transistor conducting makes the third transistor end to be protected, when the energy storage release of the energy storage delay unit terminates When so that the second transistor is ended and then make the first transistor cut-off energy storage delay unit energy storage simultaneously, described The first transistor cut-off also promotes the third transistor to be connected, and so that the third transistor is tried by the positive feedback effect of circuit Figure quickly enters saturation conduction state:If the third transistor enters normal saturation conduction state, continues if overcurrent releases Then the excessively high saturation voltage drop of the third transistor drives first crystal to overcurrent by the emitter current of the second transistor Pipe conducting makes the third transistor cut-off continue to be protected.