CN107807492B - Exposure method using exposure mask - Google Patents

Exposure method using exposure mask Download PDF

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Publication number
CN107807492B
CN107807492B CN201710790213.2A CN201710790213A CN107807492B CN 107807492 B CN107807492 B CN 107807492B CN 201710790213 A CN201710790213 A CN 201710790213A CN 107807492 B CN107807492 B CN 107807492B
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China
Prior art keywords
pattern
exposure
edge position
region
mask
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CN201710790213.2A
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CN107807492A (en
Inventor
崔容硕
朴栽洪
姜珉
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Samsung Display Co Ltd
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Samsung Display Co Ltd
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • G03F7/2063—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam for the production of exposure masks or reticles
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2045—Exposure; Apparatus therefor using originals with apertures, e.g. stencil exposure masks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/22—Exposing sequentially with the same light pattern different positions of the same surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70475—Stitching, i.e. connecting image fields to produce a device field, the field occupied by a device such as a memory chip, processor chip, CCD, flat panel display
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

The invention discloses an exposure method using an exposure mask, the exposure mask comprises: a normal area; a first edge position region adjacent to one side of the general region and divided into a plurality of cells; a second edge position region adjacent to the other side of the normal region opposite to the one side, divided into a plurality of cells, and having the same area as the first edge position region. A pattern for forming an exposure pattern on a substrate as an exposed member is formed in the normal region, an a pattern is formed in a first unit in the first edge position region, a B pattern is formed in a second unit in the second edge position region corresponding to the position of the first unit, and the same exposure pattern as the exposure pattern of the normal region is formed if the a pattern and the B pattern are double-exposed.

Description

Exposure method using exposure mask
Technical Field
The present invention relates to an exposure mask and an exposure method using the same, and more particularly, to an exposure method for exposing a mask and a region having a size larger than that of the mask.
Background
Recently, display products having smaller size, lighter weight, and more excellent performance are being produced with the benefit of the development of technology. Conventionally, a cathode ray tube television (CRT) has been widely used as a display device because of its many advantages in terms of performance and price, but a display device, such as a plasma display device, a liquid crystal display device, an organic light emitting display device, and the like, which can overcome the disadvantages of the CRT in terms of downsizing and portability and has advantages in terms of downsizing, weight reduction, and low power consumption, has attracted attention.
In the display device, a photolithography Process (Photo Process) is performed in a series of steps such as Coating a photoresist (Photo Resist Coating), alignment (Align), Exposure (Exposure), and development (development) to form various patterns on each substrate.
Here, as the display device is increased in size, a method of moving a mask smaller than the display device up and down on a large substrate and exposing the mask, that is, a slot exposure (slot exposure) method is used, but this method has a problem in that a Stitch line which is a boundary between the shots (shot) is recognized by a user.
Disclosure of Invention
Accordingly, the present invention has been made to solve the above-mentioned problems, and an object of the present invention is to provide an exposure mask for manufacturing a large-area display device in which a stitch line is not visually confirmed.
Another object of the present invention is to provide an exposure method using the exposure mask.
An exposure mask according to an embodiment for achieving the object of the present invention described above includes: a normal area; a first edge position region adjacent to one side of the general region and divided into a plurality of cells; and a second edge position region adjacent to the other side of the normal region opposite to the one side, divided into a plurality of cells, and having the same area as the first edge position region. A pattern for forming an exposure pattern on a substrate as an exposed member is formed in the normal region, an a pattern is formed in a first unit in the first edge position region, a B pattern is formed in a second unit in the second edge position region corresponding to the position of the first unit, and if the a pattern and the B pattern are double-exposed, the same exposure pattern as the exposure pattern of the normal region is formed.
In an embodiment of the invention, the B pattern may be formed in a third cell in the first edge position region. The a pattern may be formed in a fourth cell of the second edge position region corresponding to the position of the third cell.
In an embodiment of the present invention, in the first edge position region, the cells formed with the a pattern and the cells formed with the B pattern may be randomly arranged.
In an embodiment of the present invention, the exposure mask may be used to manufacture a display device, and the one unit corresponds to one pixel of the display device.
In an embodiment of the present invention, the a pattern and the B pattern may include a slit pattern.
In an embodiment of the present invention, the a pattern and the B pattern may include a Dot (Dot) opening pattern.
In an embodiment of the invention, the pattern of the normal region may include a halftone region having a light transmittance of 90% or less and 10% or more. A slit pattern may be formed in the halftone area.
In an embodiment of the present invention, the exposure mask may be used to manufacture a color filter layer or a black matrix of a display device.
In an embodiment of the present invention, the color filter layer or the black matrix may include portions having different thicknesses.
An exposure method according to an embodiment for achieving the object of the present invention includes: exposing the first radiation with an exposure mask; and exposing a second shot so as to overlap the first shot with the exposure mask. The exposure mask includes: a common area; a first edge position region adjacent to one side of the general region and divided into a plurality of cells; and a second edge position region adjacent to the other side of the common region opposite to the one side, divided into a plurality of cells, and having the same area as the first edge position region. A pattern for forming an exposure pattern on a substrate as an exposed member is formed in the normal region. In the first edge position region, an a pattern is formed in a first cell, and a B pattern is formed in a second cell of the second edge position region corresponding to the position of the first cell. If the substrate is exposed by the a pattern in the step of exposing the first irradiation and the substrate is exposed by the B pattern in the step of exposing the second irradiation, the portions of the a pattern and the B pattern that are double-exposed form the same exposure pattern as that of the normal region.
In an embodiment of the present invention, in the step of exposing the first irradiation, the first irradiation may include a second edge position region corresponding to the second edge position region of the exposure mask. In the step of exposing the second shot, the first edge position region of the exposure mask may be exposed so as to overlap with the second edge position region of the first shot.
In an embodiment of the present invention, the B pattern may be formed in a third unit in the first edge position region of the exposure mask, and the a pattern may be formed in a fourth unit in the second edge position region corresponding to a position of the third unit.
In an embodiment of the present invention, in the first edge position region of the exposure mask, the cells in which the a pattern is formed and the cells in which the B pattern is formed may be randomly arranged.
In an embodiment of the present invention, the exposure method is used for manufacturing a display device, and one unit of the exposure mask may correspond to one pixel of the display device.
In an embodiment of the present invention, the a pattern and the B pattern of the exposure mask may include slit patterns.
In an embodiment of the present invention, the a pattern and the B pattern of the exposure mask may include a Dot (Dot) opening pattern.
In an embodiment of the present invention, the pattern of the normal region of the exposure mask may include a halftone region having a light transmittance of 90% or less and 10% or more. A slit pattern may be formed on the exposure mask corresponding to the halftone area.
In an embodiment of the present invention, the exposure method may be used to manufacture a color filter layer or a black matrix of a display device.
In an embodiment of the present invention, the color filter layer or the black matrix may include portions having different thicknesses.
According to the embodiment of the present invention, it is possible to minimize a deviation caused by a dispersion (dispersion) of the exposure amount by means of double exposure of the stitch portion which is a boundary of the first irradiation and the second irradiation. That is, the double-exposed portion is exposed to 1/2 light quantity in the second edge position region on the right side of the exposure mask in the first irradiation, and is exposed to the remaining 1/2 light quantity in the first edge position region on the left side of the exposure mask in the second irradiation, so that the distribution of the exposure quantity can be made uniform as a whole. Thereby, the quality of the exposure pattern can be improved.
In addition, since the a pattern and the B pattern are arranged at random in the first edge position region and the second edge position region, variations due to the spread of the exposure amount in the vicinity of the sewing line can be dispersed, and thereby the quality of the exposure pattern can be improved.
However, the effects of the present invention are not limited to the above-described effects, and can be variously expanded within a range not departing from the spirit and the field of the present invention.
Drawings
Fig. 1 is a plan view of a mask for exposure according to an embodiment of the present invention.
Fig. 2 is a plan view showing the nth shot (shot) and the (n +1) th shot performed on the substrate using the exposure mask of fig. 1.
Fig. 3a to 3c are diagrams for explaining the nth irradiation and the (n +1) th irradiation in the SA region of fig. 2.
Fig. 4 is a plan view showing a pattern in one cell formed by means of the mask for exposure according to an embodiment of the present invention.
Fig. 5a and 5B are plan views of a pattern a and a pattern B of an exposure mask according to an embodiment of the present invention for forming the pattern of fig. 4.
Fig. 6a and 6B are plan views of a pattern a and a pattern B of an exposure mask according to another embodiment of the present invention for forming the patterns of fig. 4.
Fig. 7a and 7b are a plan view and a cross-sectional view illustrating a pattern in one cell formed by means of an exposure mask according to an embodiment of the present invention.
Fig. 8a and 8B are plan views illustrating a pattern a and a pattern B of an exposure mask according to an embodiment of the present invention for forming the patterns of fig. 7a and 7B.
Fig. 9a and 9B are plan views illustrating a pattern a and a pattern B of an exposure mask according to another embodiment of the present invention for forming the patterns of fig. 7a and 7B.
Fig. 10 is a sectional view of a display device manufactured using an exposure method using a mask for exposure according to an embodiment of the present invention.
Fig. 11 is a sectional view of a display device manufactured using an exposure method using a mask for exposure according to another embodiment of the present invention.
Fig. 12 and 13 are diagrams schematically showing the spread of the exposure amount according to the comparative example and the embodiment of the present invention.
Description of the symbols
10: mask for exposure
100: substrate
R, G, B: color Filter Pattern (Color Filter Pattern)
BM: black Matrix (Black Matrix)
SL: suture (Stitch Line)
NA: general region
PA 1: first edge location area
PA 2: second edge position area
Detailed Description
Hereinafter, preferred embodiments of the present invention will be described in more detail with reference to the accompanying drawings.
Fig. 1 is a plan view of a mask for exposure according to an embodiment of the present invention.
Referring to fig. 1, the exposure mask 10 includes: a common region NA; a first edge position area PA1 adjacent to one side of the normal area NA; a second edge position region PA2 adjacent to the other side of the normal region NA facing the one side and having the same area as the first edge position region PA 1. For example, the exposure mask 10 may have a rectangular shape, the first edge position region PA1 and the second edge position region PA2 may be spaced apart from each other in a first direction D1 and may extend in a second direction D2 substantially perpendicular to the first direction D1, and the normal region NA may be formed between the first edge position region PA1 and the second edge position region PA 2.
A pattern for forming an exposure pattern on a substrate as an exposed member may be formed in the normal region NA. For example, the substrate as the exposed member may be a substrate of a display device, and the exposure Pattern may be a Photoresist Pattern (Photoresist Pattern), a color filter Pattern, or a black matrix Pattern.
The photoresist pattern may be a photoresist pattern for forming a circuit pattern of the display device. The color filter pattern may be a red (red), green (green) or blue (blue) color filter pattern for a color filter layer constituting the display device. The black matrix pattern may be a black matrix pattern of the display device (please refer to fig. 10 and 11 for details).
The first edge position area PA1 may be divided into a plurality of cells. The second edge position area PA2 may be divided into a plurality of cells.
Half patterns (half patterns) for forming the exposure pattern on the substrate may be formed in the first edge position area PA1 and the second edge position area PA2, respectively. The half pattern is a pattern for allowing the light amount of 1/2 to pass through with respect to the pattern of the normal area NA, and if it is exposed by the half pattern of the first edge position area PA1 and double-exposed by the half pattern of the second edge position area PA2, it is possible to form the same exposure pattern as the exposure pattern formed by the pattern of the normal area NA (refer to fig. 3a to 3c for detailed description).
Fig. 2 is a plan view showing the nth shot (shot) and the (n +1) th shot performed on the substrate using the exposure mask of fig. 1.
Referring to fig. 1 and 2, the nth shot (n) S is exposed on the substrate using the exposure mask 10, and the (n +1) th shot (n) S +1 is exposed again using the exposure mask 10 in a region adjacent to the nth shot (n) S on the substrate. By repeating the above process, even in the case where the substrate is larger than the exposure mask 10, the entire substrate can be exposed. Hereinafter, the nth irradiation (n) S is represented by a first irradiation (n) S, and the n +1 th irradiation (n) S +1 is represented by a second irradiation (n +1) S.
In the first irradiation (n) S, the substrate is exposed to light using the exposure mask 10. In the first shot (n) S, a region of the exposure mask 10 corresponding to the first edge position region PA1, a region corresponding to the normal region NA, and a region corresponding to the second edge position region PA2 may be exposed.
In the second shot (n +1) S, a region adjacent to the first shot (n) S is exposed by the exposure mask 10. In the second shot (n +1) S, a region of the exposure mask 10 corresponding to the first edge position region PA1, a region corresponding to the normal region NA, and a region corresponding to the second edge position region PA2 may be exposed.
At this time, the region of the first shot (n) S corresponding to the second edge position region PA2 and the region of the second shot (n +1) S corresponding to the first edge position region PA1 overlap each other. Accordingly, the exposure pattern is formed in the region of the first shot (n) S corresponding to the normal region NA and the region of the second shot (n +1) S corresponding to the normal region NA, and the same exposure pattern as the exposure pattern in the normal region NA may be formed by double exposure in the region where the first shot (n) S and the second shot (n +1) S overlap.
At this time, if a boundary line between the first irradiation (n) S and the second irradiation (n +1) S is defined as a line SL, an exposure pattern formed by the first irradiation, an exposure pattern formed by the double exposure, and an exposure pattern formed by the second irradiation are sequentially formed in the vicinity of the line SL along the first direction D1.
In general, when exposure is performed using the exposure mask 10, there is a possibility that a left-right deviation of the exposure amount may occur due to a left-right deviation of the exposure mask 10 or the like. That is, the distribution of the exposure amount in the vicinity of the first edge position area PA1 may be different from the distribution of the exposure amount in the vicinity of the second edge position area PA 2. Therefore, a left-right deviation of the exposure amount may be generated at the stitch line SL that is a boundary of the first irradiation and the second irradiation, but according to an embodiment of the present invention, the left-right deviation may be minimized by the double exposure of the slit SL portion. That is, the double-exposed portion realizes exposure with a light amount of 1/2 in the second edge position region on the right side of the exposure mask 10 in the first irradiation, and realizes exposure with a light amount of the remainder 1/2 in the first edge position region PA1 on the left side of the exposure mask 10 in the second irradiation, so that the distribution of the exposure amount can be made uniform as a whole. Accordingly, the quality of the exposure pattern can be improved.
Fig. 3a to 3c are diagrams for explaining the nth irradiation (first irradiation) and the (n +1) th irradiation (second irradiation) in the SA region of fig. 2.
Referring to fig. 3a, the first illumination (n) S is exposed. The second edge position area (n) PA2 of the mask for exposure may be divided into a plurality of cells (shown by one quadrangular frame). An a pattern a1 or a B pattern B1 is formed in each cell. The a pattern a1 and the B pattern B1 may be randomly arranged in the second edge position region (n) PA 2. For example, the a pattern a1 may be disposed in the first unit, and the B pattern B1 may be disposed in the third unit. The first cell and the third cell may be located at any position within the second edge location area (n) PA 2.
In the normal region (N) NA of the exposure mask, a pattern N1 for forming an exposure pattern on a substrate as an exposure target member is formed.
Referring to fig. 3b, the second illumination (n +1) S is exposed. The first edge position region (n +1) PA1 of the exposure mask may be divided into a plurality of cells (shown by one quadrangular frame). A B pattern B2 or an a pattern a2 is formed in each cell. In the first edge position region (n +1) PA1, the B pattern B2 and the a pattern a2 may be arranged corresponding to the a pattern a1 and the B pattern B1, respectively, of the second edge position region (n) PA2 of the first shot (n) S. That is, in the case where a second cell of the second irradiation (n +1) S is disposed at a portion of the first cell corresponding to the first irradiation (n) S, and a fourth cell of the second irradiation (n +1) S is disposed at a portion of the third cell corresponding to the first irradiation (n) S, the B pattern B2 may be formed at the second cell, and the a pattern a2 may be formed at the fourth cell.
A pattern N2 for forming an exposure pattern on the substrate is formed in the normal region (N +1) NA of the exposure mask.
Referring to fig. 3C, if both the first irradiation (N) S and the second irradiation (N +1) S are exposed, an exposure pattern corresponding to the normal pattern N1 is formed at the normal region (N) NA of the first irradiation (N) S, and an exposure pattern corresponding to the normal pattern N2 is formed at the normal region (N +1) NA of the second irradiation (N +1) S, and the a pattern (a1 or a2) and the B pattern (B1 or B2) are double-exposed to form an exposure pattern at a region where the first irradiation (N) S and the second irradiation (N +1) S overlap. The exposure pattern that is double-exposed may be substantially the same as the exposure pattern formed at the normal region ((n) NA or (n +1) NA).
Examples of which are shown in the accompanying drawings: in a second edge position area (n) PA2 of the first shot (n) S, the plurality of cells are respectively arranged in a 3 × 2 matrix configuration on the left and right of the stitching line SL; the plurality of cells are arranged in a 3 × 2 matrix form in the normal region (n) NA adjacent to the second edge position region (n) PA 2. The arrangement and constitution of the units are not limited thereto, but may be variously modified.
In the present embodiment, the case where the a pattern or the B pattern is formed in each of the cells of the first edge position region and the second edge position region of the exposure mask has been described, but the exposure mask may have a half-pattern structure in which the same exposure pattern as that of the normal region can be formed by double exposure (see the description of fig. 1). In this case, it is preferable that the exposure amount required for exposing the exposure pattern in each of the first irradiation and the second irradiation is 1/2.
According to the present embodiment, the a pattern and the B pattern are arranged randomly in addition to the double exposure, whereby the pattern deviation based on the exposure deviation in the vicinity of the stitch line can be dispersed, whereby the quality of the exposure pattern can be improved.
Fig. 4 is a plan view showing a pattern in one cell formed by means of the mask for exposure according to an embodiment of the present invention.
Referring to fig. 4, on a substrate, a pattern PT is formed in one UNIT cell. The pattern PT may be formed by an Exposure (Exposure) and development (devilop) process using the Exposure mask. For example, the pattern PT may correspond to a color filter pattern of one pixel. According to another embodiment, the pattern PT may be a black matrix.
In the present embodiment, an example of a negative (negative) type in which an exposed portion is cured to form a pattern is shown, but it can be similarly implemented in the case of a positive (positive) type.
Fig. 5a and 5B are plan views of a pattern a and a pattern B of an exposure mask according to an embodiment of the present invention for forming the pattern of fig. 4.
Referring to fig. 4, 5a and 5B, the a pattern a may include a first slit (slit) pattern SLT1 formed corresponding to the pattern PT, and the B pattern B may include a second slit pattern SLT2 formed corresponding to the pattern PT. The first slit pattern SLT1 may include a plurality of slits. The second slit pattern SLT2 may include a plurality of slits.
By forming the slits of the first slit pattern SLT1 and the slits of the second slit pattern SLT2 at positions different from each other within the UNIT, exposure corresponding to the pattern PT can be performed by double exposure. For example, the first slit pattern SLT1 may be configured to allow a light amount of 1/2 of the exposure amount for forming the pattern PT to pass therethrough, and the second slit pattern SLT2 may be configured to allow a light amount of 1/2 of the exposure amount for forming the pattern PT to pass therethrough. Accordingly, the pattern PT may be formed by double exposure.
Fig. 6a and 6B are plan views of a pattern a and a pattern B of an exposure mask according to another embodiment of the present invention for forming the patterns of fig. 4.
Referring to fig. 4, 6a and 6B, the a pattern a may include a first DOT (DOT) pattern DOT1 formed corresponding to the pattern PT, and the B pattern B may include a second DOT pattern DOT2 formed corresponding to the pattern PT. The first DOT pattern DOT1 may include a plurality of DOT-shaped openings. The second DOT pattern DOT2 may include a plurality of DOT-shaped openings. In the present embodiment, the case where the dot-shaped openings have a quadrangular shape is described, but the deformation may be variously changed. For example, the point-like openings may be circular openings.
By forming the DOT-shaped openings of the first DOT pattern DOT1 and the DOT-shaped openings of the second DOT pattern DOT2 at positions different from each other within the cell, exposure corresponding to the pattern PT can be performed by double exposure. For example, the first DOT pattern DOT1 may be configured to allow a light amount of 1/2 of the exposure amount for forming the pattern PT to pass through, and the second DOT pattern DOT2 may be configured to allow a light amount of 1/2 of the exposure amount for forming the pattern PT to pass through. Accordingly, the pattern PT may be formed by double exposure.
Fig. 7a and 7b are a plan view and a cross-sectional view illustrating a pattern in one cell formed by means of an exposure mask according to an embodiment of the present invention.
Referring to fig. 7a and 7b, a first pattern PT1 and a second pattern PT2 are formed in one UNIT cell on a substrate. The first pattern PT1 and the second pattern PT2 may be formed by Exposure (Exposure) and development (development) processes using the Exposure mask. For example, the first and second patterns PT1 and PT2 may be black matrices. The first pattern PT1 is a pattern formed by full exposure (full exposure), and the second pattern PT2 is a pattern formed by half exposure (half exposure), and may be formed to be thinner than the first pattern PT 1. That is, the exposure mask may be a halftone (halftone) mask capable of forming patterns having different thicknesses from each other at a time. For example, in a normal region (see NA in fig. 1) of the exposure mask, a halftone region having a light transmittance of 90% or less and 10% or more may be formed corresponding to the second pattern PT 2. The halftone area may be implemented by a slit pattern or the like.
According to another embodiment, the first and second patterns PT1 and PT2 may be color filter patterns having different thicknesses from each other.
In the present embodiment, an example of a negative type in which an exposed portion is cured to form a pattern is shown, but it can be similarly implemented in the case of a positive type.
Fig. 8a and 8B are plan views illustrating a pattern a and a pattern B of an exposure mask according to an embodiment of the present invention for forming the patterns of fig. 7a and 7B.
Referring to fig. 7a, 8a and 8B, the a pattern a may include a first slit pattern SLT1 formed corresponding to the first pattern PT1 and a first 'slit pattern SLT 1' formed corresponding to the second pattern PT2, and the B pattern B may include a second slit pattern SLT2 formed corresponding to the first pattern PT1 and a second 'slit pattern SLT 2' formed corresponding to the second pattern PT 2. The first slit pattern SLT1 may include a plurality of slits. The second slit pattern SLT2 may include a plurality of slits. The first slit pattern SLT 1' may include a plurality of slits formed at a lower density than the slits of the first slit pattern SLT 1. The second 'slit pattern SLT 2' may include a plurality of slits formed at a lower density than the slits of the second slit pattern SLT 2.
By forming the slits of the first slit pattern SLT1 and the slits of the second slit pattern SLT2 in different positions from each other within the cell, exposure corresponding to the first pattern PT1 can be performed by double exposure. For example, the first slit pattern SLT1 may be configured to allow the light amount of 1/2 of the exposure amount for forming the first pattern PT1 to pass through, and the second slit pattern SLT2 may be configured to allow the light amount of 1/2 of the exposure amount for forming the first pattern PT1 to pass through. Accordingly, the first pattern PT1 may be formed by double exposure.
And, by forming the slits of the first 'slit pattern SLT 1' and the slits of the second 'slit pattern SLT 2' in different positions from each other within the cell, it is possible to perform exposure corresponding to the second pattern PT2 through double exposure. For example, the first 'slit pattern SLT 1' may be configured to allow a light amount of 1/2 of the exposure amount (half exposure) for forming the second pattern PT2 to pass therethrough, and the second 'slit pattern SLT 2' may be configured to allow a light amount of 1/2 of the exposure amount (half exposure) for forming the second pattern PT2 to pass therethrough. Accordingly, the second pattern PT2 may be formed by double exposure.
Fig. 9a and 9B are plan views illustrating a pattern a and a pattern B of an exposure mask according to another embodiment of the present invention for forming the patterns of fig. 7a and 7B.
Referring to fig. 7a, 9a and 9B, the a pattern a may include a first DOT pattern DOT1 formed corresponding to the first pattern PT1 and a first 'DOT pattern DOT 1' formed corresponding to the second pattern PT2, and the B pattern B may include a second DOT pattern DOT2 formed corresponding to the first pattern PT1 and a second 'DOT pattern DOT 2' formed corresponding to the second pattern PT 2. The first DOT pattern DOT1 may include a plurality of DOT-shaped openings. The second DOT pattern DOT2 can include a plurality of DOT openings. The first DOT pattern DOT 1' may include a plurality of DOT openings formed at a lower density than the DOT openings of the first DOT pattern DOT 1. The second 'DOT pattern DOT 2' may include a plurality of DOT openings formed at a lower density than the DOT openings of the second DOT pattern DOT 2.
By forming the DOT-shaped openings of the first DOT pattern DOT1 and the DOT-shaped openings of the second DOT pattern DOT2 in positions different from each other within the cell, exposure corresponding to the first pattern PT1 can be performed by double exposure. For example, the first DOT pattern DOT1 may be configured to allow a light amount of 1/2 of the exposure amount for forming the first pattern PT1 to pass through, and the second DOT pattern DOT2 may be configured to allow a light amount of 1/2 of the exposure amount for forming the first pattern PT1 to pass through. Accordingly, the first pattern PT1 may be formed by double exposure.
And, by forming the DOT-shaped openings of the first 'DOT pattern DOT 1' and the DOT-shaped openings of the second 'DOT pattern DOT 2' at different positions from each other within the cell, it is possible to perform exposure corresponding to the second pattern PT2 through double exposure. For example, the first 'DOT pattern DOT 1' may be configured to allow a light amount of 1/2 of the exposure amount (half exposure) for forming the second pattern PT2 to pass through, and the second 'DOT pattern DOT 2' may be configured to allow a light amount of 1/2 of the exposure amount (half exposure) for forming the second pattern PT2 to pass through. Accordingly, the second pattern PT2 may be formed by double exposure.
Fig. 10 is a sectional view of a display device manufactured using an exposure method using a mask for exposure according to an embodiment of the present invention.
Referring to fig. 10, the display device includes a substrate 100, a black matrix BM disposed on the substrate 100, and a color filter layer disposed on the substrate 100 on which the black matrix BM is formed. The color filter layer may include red, green, and blue color filter patterns R, G, and B. The substrate 100 may be a TFT substrate of a display device formed with a thin film transistor. In another embodiment, the substrate 100 may be an opposite substrate opposite to the TFT substrate.
The black matrix BM, the red color filter pattern R, the green color filter pattern G, and the blue color filter pattern B may be respectively formed using a mask for exposure according to an embodiment of the present invention. In the case of the blue color filter B, for example, the blue color filter pattern B may be formed by applying a photoresist constituting the blue color filter on the substrate 100 on which the black matrix BM, the red color filter pattern R, and the green color filter pattern G are formed, and then exposing and developing the first irradiation (n) S and the second irradiation (n +1) S using the exposure mask.
The blue color filter pattern B of the normal area (n) NA of the first irradiation (n) S positioned at the left side of the stitch line SL is defined as a first SAMPLE1, and the blue color filter pattern B of the area where the second edge position area (n) PA2 of the first irradiation (n) S and the first edge position area (n +1) PA1 of the second irradiation (n +1) S overlap is defined as a second SAMPLE2 and a fourth SAMPLE4, respectively, and the blue color filter pattern B of the normal area (n +1) NA of the second irradiation (n +1) S may be defined as a third SAMPLE 3. In this case, the first SAMPLE SAMPLE1 formed by the first irradiation (n) S is formed by a right portion of the exposure mask, the third SAMPLE SAMPLE3 formed by the second irradiation (n +1) S is formed by a left portion of the exposure mask, and the second SAMPLE SAMPLE2 and the fourth SAMPLE SAMPLE4 are formed by double exposure of the right portion and the left portion of the exposure mask.
At this time, even if the variation of the exposure amount occurs due to the variation of the left and right portions of the exposure mask, the second SAMPLE2 and the fourth SAMPLE4 near the stitch line SL are formed by double exposure, so the variation of the exposure amount can be dispersed. Further, since the second SAMPLE2 and the fourth SAMPLE4 are exposed to the first irradiation (n) S by an a pattern and a B pattern, respectively, and are exposed to the second irradiation (n +1) S by a B pattern and an a pattern, respectively, and the a pattern and the B pattern of the exposure mask are randomly arranged, the exposure amount variation between the second SAMPLE2 and the fourth SAMPLE4 can be dispersed.
Fig. 11 is a sectional view of a display device manufactured using an exposure method using a mask for exposure according to another embodiment of the present invention.
Referring to fig. 11, the display device includes a substrate 100, a black matrix BM disposed on the substrate 100, and a color filter layer disposed on the substrate 100 on which the black matrix BM is formed. The color filter layer may include red, green, and blue color filter patterns R, G, and B. The substrate 100 may be a TFT substrate of a display device formed with a thin film transistor. In another embodiment, the substrate 100 may be an opposite substrate opposite to the TFT substrate.
The black matrix BM, the red color filter pattern R, the green color filter pattern G, and the blue color filter pattern B may be respectively formed using a mask for exposure according to an embodiment of the present invention. Taking the case of the black matrix BM as an example, the black matrix BM may be formed by applying a photoresist for forming a black matrix on the substrate 100, and then developing after exposing the first irradiation (n) S and the second irradiation (n +1) S using the exposure mask.
The black matrix BM is formed using a mask including a half-tone region, and may include a portion having a first thickness t1 and the second thickness t 2. A portion of the black matrix BM having the first thickness t1 is formed by the halftone area, and the first thickness t1 may be less than the second thickness t 2.
The black matrix BM of the normal area (n) NA of the first irradiation (n) S located at the left side of the stitch line SL is defined as a first SAMPLE1, and the black matrix BM of the area where the second edge position area (n) PA2 of the first irradiation (n) S and the first edge position area (n +1) PA1 of the second irradiation (n +1) S overlap is defined as a second SAMPLE2 and a fourth SAMPLE4, respectively, and the black matrix BM of the normal area (n +1) NA of the second irradiation (n +1) S may be defined as a third SAMPLE 3. In this case, the first SAMPLE SAMPLE1 formed by the first irradiation (n) S is formed by a right portion of the exposure mask, the third SAMPLE SAMPLE3 formed by the second irradiation (n +1) S is formed by a left portion of the exposure mask, and the second SAMPLE SAMPLE2 and the fourth SAMPLE SAMPLE4 are formed by double exposure of the right portion and the left portion of the exposure mask.
In this case, even if the variation in the exposure amount occurs due to the variation in the left and right portions of the exposure mask, the second SAMPLE2 and the fourth SAMPLE4 near the stitch line SL are formed by double exposure, and therefore, the variation in the exposure amount can be dispersed. Further, since the second SAMPLE2 and the fourth SAMPLE4 are exposed to the light by an a pattern and a B pattern in the first irradiation (n) S, respectively, and are exposed to the light by a B pattern and an a pattern in the second irradiation (n +1) S, respectively, and the a pattern and the B pattern of the exposure mask are arranged at random, it is possible to disperse the difference in exposure amount between the second SAMPLE2 and the fourth SAMPLE 4.
Fig. 12 and 13 are diagrams schematically showing the spread of the exposure amount according to the comparative example and the embodiment of the present invention.
Referring to fig. 12, four cells arranged in a matrix along the first direction D1 and the second direction D2 will be described as an example. According to the deviation of the left and right sides of the exposure mask, the right side portion is assumed to be 60mW/cm 2 Is exposed, the left part is at 40mW/cm 2 Is exposed to light.
According to the comparative example, the regions a1, a2 exposed by means of the first irradiation are exposed through the right side portion of the exposure mask, and the regions B1, B2 exposed by means of the second irradiation are exposed through the left side portion of the exposure mask, so that a deviation in exposure amount occurs.
Referring to fig. 13, according to the embodiment of the present invention, the a1, a2, B1, B2 regions are all double exposed and 50% exposed through the left portion of the exposure mask and 50% exposed through the right portion of the exposure mask, and thus it is possible to disperse and average the difference in exposure amount due to the left and right side deviation of the exposure mask as a whole. Thereby improving the exposure quality.
According to the embodiment of the present invention, it is possible to minimize a deviation caused by a spread (dispersion) of the exposure amount by means of double exposure of the stitch portion as a boundary of the first irradiation and the second irradiation. That is, the double-exposed portion is exposed to 1/2 light quantity in the second edge position region on the right side of the exposure mask in the first irradiation, and is exposed to the remaining 1/2 light quantity in the first edge position region on the left side of the exposure mask in the second irradiation, so that the distribution of the exposure quantity can be made uniform as a whole. Thereby, the quality of the exposure pattern can be improved.
In addition, since the a pattern and the B pattern are arranged at random in the first edge position region and the second edge position region, variations due to the dispersion of the exposure amount in the vicinity of the stitch can be dispersed, and the quality of the exposure pattern can be improved.
Although the present invention has been described with reference to the embodiments, those skilled in the art can variously modify and change the present invention without departing from the scope of the invention and the spirit of the present invention described in the claims.

Claims (10)

1. An exposure method comprising:
exposing the first shot with an exposure mask; and
a step of exposing a second shot with the exposure mask so as to partially overlap the first shot,
the exposure mask includes: a normal area; a first edge position region adjacent to one side of the general region and divided into a plurality of cells; and a second edge position region adjacent to the other side of the normal region opposite to the one side, divided into a plurality of cells, and having the same area as the first edge position region,
a pattern for forming an exposure pattern on a substrate as an exposed member is formed in the normal region,
in the first edge position region, an A pattern through which a light quantity of 1/2 for an exposure quantity for forming the exposure pattern is transmitted is formed in the first unit,
a B pattern through which a light amount of 1/2 of an exposure amount used to form the exposure pattern is transmitted is formed in a second unit of the second marginal position region corresponding to the position of the first unit,
if the substrate is exposed by the a pattern in the step of exposing the first irradiation and the substrate is exposed by the B pattern in the step of exposing the second irradiation, the same exposure pattern as that of the normal region is formed by the portion double-exposed by the a pattern and the B pattern.
2. The exposure method according to claim 1,
in the step of exposing the first shot, the first shot includes a second edge position area corresponding to the second edge position area of the exposure mask,
in the step of exposing the second shot, exposure is performed so that the first edge position region of the exposure mask overlaps the second edge position region of the first shot.
3. The exposure method according to claim 2,
in the first edge position region of the exposure mask, the B pattern is formed in a third cell, and the a pattern is formed in a fourth cell in the second edge position region corresponding to the position of the third cell.
4. The exposure method according to claim 2,
in the first edge position region of the exposure mask, the cells in which the a pattern is formed and the cells in which the B pattern is formed are arranged at random.
5. The exposure method according to claim 3,
the exposure method is used for manufacturing a display device,
one unit of the exposure mask corresponds to one pixel of the display device.
6. The exposure method according to claim 3,
the A pattern and the B pattern of the exposure mask include a slit pattern.
7. The exposure method according to claim 3,
the pattern A and the pattern B of the exposure mask include dot-shaped opening patterns.
8. The exposure method according to claim 3,
the pattern of the normal region of the exposure mask includes a halftone region having a light transmittance of 90% or less and 10% or more,
a slit pattern is formed in the exposure mask corresponding to the halftone area.
9. The exposure method according to claim 3,
the exposure method is used for manufacturing a color filter layer or a black matrix of a display device.
10. The exposure method according to claim 9,
the color filter layer or the black matrix includes portions having different thicknesses.
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