CN107799634A - A kind of GaN base LED epitaxial growth methods based on ZnO - Google Patents

A kind of GaN base LED epitaxial growth methods based on ZnO Download PDF

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CN107799634A
CN107799634A CN201711024142.1A CN201711024142A CN107799634A CN 107799634 A CN107799634 A CN 107799634A CN 201711024142 A CN201711024142 A CN 201711024142A CN 107799634 A CN107799634 A CN 107799634A
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徐平
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Xiangneng Hualei Optoelectrical Co Ltd
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Abstract

This application provides a kind of GaN base LED epitaxial growth methods based on ZnO, including：Sapphire Substrate is put into magnetron sputtering reaction chamber, on a sapphire substrate growing ZnO thin-film；The Sapphire Substrate taking-up for having ZnO film will be grown, be put into MOCVD reaction chambers, successively growth doping Si N-type GaN layer, active layer MQW, p-type AlGaN layer and p-type GaN layer；Annealing.The present invention grows the ZnO film of high quality by using magnetically controlled sputter method as cushion on a sapphire substrate, there is identical crystal structure (wurtzite structure) using GaN and ZnO, and there is the advantages of small lattice mismatch and thermal mismatching between ZnO, reduce LED epitaxial growth defects, epitaxial crystal quality is improved, lifts the photoelectric properties of LED component.

Description

GaN-based LED epitaxial growth method based on ZnO
Technical Field
The invention belongs to the technical field of LEDs, and particularly relates to a GaN-based LED epitaxial growth method based on ZnO.
Background
An LED (Light Emitting Diode) is a solid lighting, and because the LED has the advantages of small size, low power consumption, long service life, high brightness, environmental protection, firmness and durability, etc., the LED is accepted by consumers, and the scale of domestic LED production is gradually expanding.
Sapphire is the most popular substrate material for the commercial growth of GaN-based LEDs at the present stage. Due to lattice mismatch between the sapphire substrate and GaN, lattice defect density in GaN-based LED devices needs to be reduced by means of growing various buffer layers.
The traditional growth method of the LED epitaxial layer comprises the following steps: processing a substrate, growing a low-temperature buffer layer GaN, growing a 3D GaN layer, growing a 2D GaN layer, growing an N-type GaN layer doped with Si, periodically growing an insulating layer MQW, growing a P-type AlGaN layer, growing a P-type GaN layer doped with Mg, and cooling.
In the above conventional epitaxial technique, sapphire (Al) is used2O3) GaN material grows on the substrate because of Al2O3The material and the GaN material have larger lattice mismatch, and the dislocation density of the GaN material is as high as 109 roots/cm2The improvement of the luminous efficiency of the GaN LED chip is influenced; and the defects of poor heat conduction of the substrate, serious light absorption, difficult peeling and the like exist. The main method for controlling the dislocation density at present is to grow a layer of thin GaN as a buffer layer at low temperature, then to perform 3D growth and 2D growth of GaN on the basis of the buffer layer, and finally to form a relatively flat GaN layer.
A conventional LED epitaxial growth method is provided below:
1. introducing 50-100L/min H at 900-1100 deg.C and reaction cavity pressure of 100-200mbar2Processing the sapphire substrate for 5-10 min under the condition of (1);
2. growing a low-temperature buffer GaN layer;
3. and growing a 3D GaN layer with the thickness of 2-3 μm.
4. And growing a 2D GaN layer with the thickness of 2-3 μm.
5. Growing an N-type GaN layer doped with Si;
6. periodically growing an active layer MQW;
7. growing a 50nm-100nm P-type AlGaN layer;
8. growing a Mg-doped P-type GaN layer of 100nm-300 nm;
9. introducing N of 100L/min-150L/min at the temperature of 700-800 DEG C2Keeping the temperature for 20-30min, and cooling along with the furnace.
Although conventional buffer layer techniques have been able to reduce Al to some extent2O3Lattice mismatch between the material and the GaN material improves the luminous efficiency of the GaN-based LED luminous device to a certain extent, but a large number of defects still exist between the traditional buffer layer and the sapphire substrate or between the buffer layer and the N-type GaN layer.
Therefore, providing a GaN-based LED epitaxial growth method based on ZnO to further reduce material defects is a technical problem to be solved in the art.
Disclosure of Invention
In order to solve the problem that a large number of defects still exist between a buffer layer and a sapphire substrate and between the buffer layer and an N-type GaN layer after a traditional buffer layer is adopted in the background art, the invention discloses a GaN-based LED epitaxial growth method based on ZnO, which can further reduce material defects and improve the growth quality of LED epitaxial crystals, thereby improving the photoelectric performance of an LED device.
In order to solve the problems in the background art, the invention provides a GaN-based LED epitaxial growth method based on ZnO, comprising:
putting a sapphire substrate into a magnetron sputtering reaction cavity, using high-purity metal zinc as a target material, and growing a ZnO film with the thickness of 200-260nm on the sapphire substrate for 20-30min under the conditions that the temperature of the cavity is 350-400 ℃, the pressure of the reaction cavity is 1-2Pa, the radio-frequency power is 100-150W, 500-800sccm oxygen and 1000-1600sccm argon are introduced, and the flow rate ratio of the oxygen to the argon is controlled to be 1: 2;
putting the sapphire substrate on which the ZnO film grows into an MOCVD reaction chamber, and growing an N-type GaN layer, an active layer MQW, a P-type AlGaN layer and a P-type GaN layer which are doped with Si in sequence;
introducing N of 100L/min-150L/min at the temperature of 700-800 DEG C2Keeping the temperature for 20-30min under the condition of (1), and cooling along with the furnace.
Further, introducing 50-90L/min H at 1000-1100 deg.C and reaction cavity pressure of 150-300mbar240-60L/min NH3TMGa of 200-300sccm and SiH of 20-50sccm4Under the conditions of (1), growing a Si-doped N-type GaN layer with a thickness of 2-4 μm and a Si doping concentration of 5X 1018atoms/cm3-1×1019atoms/cm3。
Further, introducing 50-100L/min H at 900-1100 deg.C and reaction cavity pressure of 100-200mbar2Processing the sapphire substrate for 5-10 min under the condition (1).
Further, the active layer MQW includes: alternatively grown InxGa(1-x)The N well layer and the GaN barrier layer are controlled to be 10-15 in alternating period.
Further, introducing 50-90L/min N at the temperature of 700-750 ℃ and the pressure of a reaction cavity of 300-400 mbar240-60L/min NH3Growing the In with the thickness of 3nm to 4nm under the conditions of TMGa of 10 to 50sccm and TMIn of 1000 to 2000sccmxGa(1-x)An N-well layer, wherein,
x＝0.15-0.25，
in doping concentration of 1 × 1020atoms/cm3-3×1020atoms/cm3。
Further, N is introduced at 50-90L/min at 800-850 deg.C240-60L/min NH3And growing the GaN barrier layer with the thickness of 10nm-15nm under the condition of TMGa of 10-50 sccm.
Further, introducing 50-90L/min N at 850-950 deg.C and reaction chamber pressure of 200r-400mbar240-60L/min NH3And growing the P-type AlGaN layer doped with Mg under the condition of TMGa of 50-100 sccm.
Further, the thickness of the Mg-doped P-type AlGaN layer is 50nm-100 nm; wherein,
al doping concentration of 1X 1020atoms/cm3-3×1020atoms/cm3；
Mg doping concentration of 5 x 1018atoms/cm3-1×1019atoms/cm3。
Further, introducing 50-90L/min N at high temperature of 950-1000 ℃ and reaction cavity pressure of 200-600mbar240-60L/min NH3And growing the P-type GaN layer doped with Mg under the condition of TMGa of 50-100 sccm.
Further, the thickness of the Mg-doped P-type GaN layer is 100nm to 300nm, wherein,
mg doping concentration is 1X 1019atoms/cm3-1×1020atoms/cm3。
Compared with the prior art, the GaN-based LED epitaxial growth method based on ZnO achieves the following effects:
according to the GaN-based LED epitaxial growth method based on ZnO, the high-quality ZnO film is grown on the sapphire substrate by utilizing the magnetron sputtering method to serve as the buffer layer, and the GaN and the ZnO have the same crystal structure (wurtzite structure) and have small lattice mismatch and thermal mismatch with the ZnO, so that defects caused by lattice mismatch and thermal mismatch can be avoided in principle, the problem of heteroepitaxial growth of defects induced by lattice mismatch is solved, the epitaxial growth defects of the LED are reduced, the epitaxial crystal quality is improved, and the photoelectric performance of the LED is improved. In addition, the ZnO thin film material has good thermal stability and chemical stability, the preparation temperature is much lower than that of a GaN material, and the defects generated by high-temperature preparation can be greatly reduced. In addition, the ZnO film is adopted to replace the traditional method of growing the low-temperature buffer layer GaN, growing the 3D GaN layer and growing the 2D GaN layer, so that the MOCVD growth time is shortened by over 50 minutes, and the production efficiency can be improved.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the invention and not to limit the invention. In the drawings:
fig. 1 is a schematic structural view of an LED epitaxy prepared by the ZnO-based LED epitaxial growth method in example 1;
fig. 2 is a schematic structural view of an LED epitaxy prepared by the ZnO-based LED epitaxial growth method in example 2;
fig. 3 is a schematic view of an LED epitaxial structure prepared by a conventional LED epitaxial growth method in the prior art.
Detailed Description
As used in the specification and in the claims, certain terms are used to refer to particular components. As one skilled in the art will appreciate, manufacturers may refer to a component by different names. This specification and claims do not intend to distinguish between components that differ in name but not function. In the following description and in the claims, the terms "include" and "comprise" are used in an open-ended fashion, and thus should be interpreted to mean "include, but not limited to. "substantially" means within an acceptable error range, and a person skilled in the art can solve the technical problem within a certain error range to substantially achieve the technical effect. The description which follows is a preferred embodiment of the present application, but is made for the purpose of illustrating the general principles of the application and not for the purpose of limiting the scope of the application. The protection scope of the present application shall be subject to the definitions of the appended claims.
Furthermore, the present description does not limit the components and method steps disclosed in the claims to those of the embodiments. In particular, the dimensions, materials, shapes, structural and adjacent orders, manufacturing methods, and the like of the components described in the embodiments are merely illustrative examples, and the scope of the present invention is not limited thereto, unless otherwise specified. The sizes and positional relationships of the structural members shown in the drawings are exaggerated for clarity of illustration.
The present application will be described in further detail below with reference to the accompanying drawings, but the present application is not limited thereto.
Example 1
Fig. 1 is a schematic structural diagram of an LED epitaxy prepared by using the ZnO-based GaN-based LED epitaxial growth method provided in this embodiment. Referring to fig. 1, the LED extension includes: a ZnO film 102, an N-type GaN layer 103, an active layer MQW104, a P-type AlGaN layer 105 and a P-type GaN layer 106 which are grown on a sapphire substrate 101 in sequence; wherein the active layer MQW104 comprises alternately grown InxGa(1-x)The number of the N well layers 1041 and the number of the GaN barrier layers 1042 are controlled to be 10-15 in an alternating period.
The GaN-based LED epitaxial growth method based on ZnO in this embodiment includes:
step 11: putting a sapphire substrate into a magnetron sputtering reaction cavity, using high-purity metal zinc as a target material, and growing a ZnO film with the thickness of 200-260nm on the sapphire substrate for 20-30min under the conditions that the temperature of the cavity is 400-450 ℃, the pressure of the reaction cavity is 1-2Pa, the radio-frequency power is 100-150W, 500-800sccm oxygen and 1000-1600sccm argon are introduced, and the flow rate ratio of the oxygen to the argon is controlled to be 1: 2;
step 12: and taking the sapphire substrate on which the ZnO film grows out of the magnetron sputtering reaction cavity, putting the sapphire substrate into an MOCVD reaction cavity by adopting a metal organic chemical vapor deposition method, and growing an N-type GaN layer doped with Si on the sapphire on which the ZnO film grows.
Step 13: the MQW active layer is periodically grown.
Step 14: and growing a P-type AlGaN layer.
Step 15: and growing a P-type GaN layer doped with Mg.
Step 16: introducing N of 100L/min-150L/min at the temperature of 700-800 DEG C2Keeping the temperature for 20-30min under the condition of (1), and cooling along with the furnace.
According to the GaN-based LED epitaxial growth method based on ZnO, the high-quality ZnO film is grown on the sapphire substrate by utilizing the magnetron sputtering method to serve as the buffer layer, and the GaN and the ZnO have the same crystal structure (wurtzite structure) and have small lattice mismatch and thermal mismatch with the ZnO, so that defects caused by lattice mismatch and thermal mismatch can be avoided in principle, the problem of heteroepitaxial growth of defects induced by lattice mismatch is solved, the epitaxial growth defects of the LED are reduced, the epitaxial crystal quality is improved, and the photoelectric performance of the LED is improved. In addition, the ZnO thin film material has good thermal stability and chemical stability, the preparation temperature is much lower than that of a GaN material, and the defects generated by high-temperature preparation can be greatly reduced. In addition, the ZnO film is adopted to replace the traditional method of growing the low-temperature buffer layer GaN, growing the 3D GaN layer and growing the 2D GaN layer, so that the MOCVD growth time is shortened by over 50 minutes, and the production efficiency can be improved.
Example 2
Fig. 2 is a schematic structural diagram of an LED epitaxy prepared by using the ZnO-based GaN-based LED epitaxial growth method provided in this embodiment. Referring to fig. 2, the LED extension includes: a ZnO film 202, an N-type GaN layer 203, an active layer MQW204, a P-type AlGaN layer 205 and a P-type GaN layer 206 which are sequentially grown on a sapphire substrate 201; wherein the active layer MQW204 comprises alternately grown InxGa(1-x)The number of the N well layers 2041 and the number of the GaN barrier layers 2042 are controlled to be 10-15 in an alternating period.
The GaN-based LED epitaxial growth method based on ZnO in this embodiment specifically includes:
step 21: putting a sapphire substrate into a magnetron sputtering reaction cavity, using high-purity metal zinc as a target material, and growing a ZnO film with the thickness of 200-260nm on the sapphire substrate for 20-30min under the conditions that the temperature of the cavity is 400-450 ℃, the pressure of the reaction cavity is 1-2Pa, the radio-frequency power is 100-150W, 500-800sccm oxygen and 1000-1600sccm argon are introduced, and the flow rate ratio of the oxygen to the argon is controlled to be 1: 2;
step 22: and growing an N-type GaN layer doped with Si in the MOCVD reaction chamber.
Specifically, the sapphire on which the ZnO film is to be depositedPlacing the stone substrate into MOCVD reaction chamber, introducing 50-90L/min H at 1000-1100 deg.C and 150-300mbar pressure in the reaction chamber240-60L/min NH3TMGa of 200-300sccm and SiH of 20-50sccm4Under the conditions of (1), growing a Si-doped N-type GaN layer with a thickness of 2-4 μm and a Si doping concentration of 5X 1018atoms/cm3-1×1019atoms/cm3。
Step 23: and in the MOCVD reaction cavity, growing an active layer MQW.
The active layer MQW includes: alternatively grown InxGa(1-x)The N well layer and the GaN barrier layer are controlled to be 10-15 in alternating period.
Specifically, the temperature is 700-750 ℃, the pressure of a reaction cavity is 300-400 mbar, and 50-90L/min N is introduced240-60L/min NH3Growing the In with the thickness of 3nm to 4nm under the conditions of TMGa of 10 to 50sccm and TMIn of 1000 to 2000sccmxGa(1-x)An N-well layer, wherein,
x＝0.15-0.25，
in doping concentration of 1 × 1020atoms/cm3-3×1020atoms/cm3。
Concretely, N is introduced at the temperature of 800-850 ℃ and 50-90L/min240-60L/min NH3And growing the GaN barrier layer with the thickness of 10nm-15nm under the condition of TMGa of 10-50 sccm.
Step 24: and growing a P-type AlGaN layer in the MOCVD reaction chamber.
Concretely, N is introduced at 50-90L/min under the conditions that the temperature is 850-950 ℃ and the pressure of a reaction cavity is 200r-400mbar240-60L/min NH3And growing the P-type AlGaN layer doped with Mg under the condition of TMGa of 50-100 sccm. The thickness of the Mg-doped P-type AlGaN layer is 50nm-100 nm; wherein the Al doping concentration is 1 × 1020atoms/cm3-3×1020atoms/cm3(ii) a Mg doping concentration of 5 x 1018atoms/cm3-1×1019atoms/cm3。
Step 25: in the MOCVD reaction chamber, a P-type GaN layer is formed.
Concretely, N is introduced at 50-90L/min under the conditions that the temperature is 950-1000 ℃, the pressure of a reaction cavity is 200-600mbar240-60L/min NH3And growing the P-type GaN layer doped with Mg under the condition of TMGa of 50-100 sccm. The thickness of the P-type GaN layer doped with Mg is 100nm-300nm, wherein the Mg doping concentration is 1 × 1019atoms/cm3-1×1020atoms/cm3。
Step 26: introducing N of 100L/min-150L/min at the temperature of 700-800 DEG C2Keeping the temperature for 20-30min under the condition of (1), and cooling along with the furnace.
According to the GaN-based LED epitaxial growth method based on ZnO, the high-quality ZnO film is grown on the sapphire substrate by utilizing the magnetron sputtering method to serve as the buffer layer, and the GaN and the ZnO have the same crystal structure (wurtzite structure) and have small lattice mismatch and thermal mismatch with the ZnO, so that defects caused by lattice mismatch and thermal mismatch can be avoided in principle, the problem of heteroepitaxial growth of defects induced by lattice mismatch is solved, the epitaxial growth defects of the LED are reduced, the epitaxial crystal quality is improved, and the photoelectric performance of the LED is improved. In addition, the ZnO thin film material has good thermal stability and chemical stability, the preparation temperature is much lower than that of a GaN material, and the defects generated by high-temperature preparation can be greatly reduced. In addition, the ZnO film is adopted to replace the traditional method of growing the low-temperature buffer layer GaN, growing the 3D GaN layer and growing the 2D GaN layer, so that the MOCVD growth time is shortened by over 50 minutes, and the production efficiency can be improved.
Comparative examples
Fig. 3 is a schematic structural diagram of an LED epitaxial layer prepared by a conventional LED epitaxial growth method. Referring to fig. 3, the LED extension includes: a buffer layer 302, an N-type GaN layer 303, an active layer MQW304, a P-type AlGaN layer 305 and a P-type GaN layer 306 which are sequentially grown on a sapphire substrate 301; wherein the buffer layer 302 includes: low temperature GaNA buffer layer 3021, a 3D GaN layer 3022, and a 2D GaN layer 3023; an active layer MQW304 comprising alternately grown InxGa(1-x)The number of the N well layers 3041 and the GaN barrier layers 3042 is controlled to be 10-15 in an alternating period.
LED epitaxy is grown on a sapphire substrate by MOCVD, and the traditional method comprises the following steps:
step 31: introducing 50-100L/min H at 900-1100 deg.C and reaction cavity pressure of 100-200mbar2Processing the sapphire substrate for 5-10 min under the condition (1).
Step 32: and growing a low-temperature GaN buffer layer.
Concretely, 50-90L/min H is introduced at the temperature of 550-650 ℃ and the pressure of a reaction cavity of 300-600mbar240-60L/min NH3And growing a low-temperature buffer layer GaN with the thickness of 30nm-60nm on the sapphire substrate under the condition of TMGa of 50-100 sccm.
Step 33: and growing a 3D GaN layer.
Concretely, 50-90L/min H is introduced at 850-1000 ℃ and the pressure of a reaction cavity of 300-600mbar240-60L/min NH3And continuously growing a 3D GaN layer with the thickness of 2-3 mu m under the condition of TMGa with the thickness of 200-300 sccm.
Step 34: and growing a 2D GaN layer.
Specifically, introducing 50-90L/min H at 1000-1100 deg.C and 300-600mbar in reaction chamber240-60L/min NH3And continuously growing a 2D GaN layer with the thickness of 2-3 μm under the condition of TMGa with the thickness of 300-400 sccm.
Step 35: and growing an N-type GaN layer doped with Si.
Specifically, 50-90L/min H is introduced at the temperature of 1000-1100 ℃ and the pressure of a reaction cavity of 150-300mbar240-60L/min NH3TMGa of 200-300sccm and SiH of 20-50sccm4Growing a Si-doped N-type GaN layer with a thickness of 2-4 μm, with a Si doping concentration of 5 a1018atoms/cm3-1×1019atoms/cm3。
Step 36: the active layer MQW is periodically grown.
The active layer MQW comprises: alternatively grown InxGa(1-x)The N well layer and the GaN barrier layer are controlled to be 10-15 in alternating period.
Specifically, the temperature is 700-750 ℃, the pressure of a reaction cavity is 300-400 mbar, and 50-90L/min N is introduced240-60L/min NH3Growing the In with the thickness of 3nm to 4nm under the conditions of TMGa of 10 to 50sccm and TMIn of 1000 to 2000sccmxGa(1-x)An N-well layer, wherein,
x＝0.15-0.25，
in doping concentration of 1 × 1020atoms/cm3-3×1020atoms/cm3。
Concretely, N is introduced at the temperature of 800-850 ℃ and 50-90L/min240-60L/min NH3And growing the GaN barrier layer with the thickness of 10nm-15nm under the condition of TMGa of 10-50 sccm.
Step 37: and growing a P-type AlGaN layer.
Concretely, N is introduced at 50-90L/min under the conditions that the temperature is 850-950 ℃ and the pressure of a reaction cavity is 200r-400mbar240-60L/min NH3And growing the P-type AlGaN layer doped with Mg under the condition of TMGa of 50-100 sccm. The thickness of the Mg-doped P-type AlGaN layer is 50nm-100 nm; wherein the Al doping concentration is 1 × 1020atoms/cm3-3×1020atoms/cm3(ii) a Mg doping concentration of 5 x 1018atoms/cm3-1×1019atoms/cm3。
Step 38: and growing a P-type GaN layer.
Concretely, N is introduced at 50-90L/min under the conditions that the temperature is 950-1000 ℃, the pressure of a reaction cavity is 200-600mbar240-60L/min NH3And growing the P-type GaN layer doped with Mg under the condition of TMGa of 50-100 sccm. The thickness of the P-type GaN layer doped with Mg is 100nm-300nm, wherein the Mg doping concentration is 1 × 1019atoms/cm3-1×1020atoms/cm3。
Step 39: introducing N of 100L/min-150L/min at the temperature of 700-800 DEG C2Keeping the temperature for 20-30min under the condition of (1), and cooling along with the furnace.
4 samples 1 were prepared according to the conventional LED growth method, and 4 samples 2 were prepared according to the method provided in this patent; after the sample growth is completed, the XRD102 surface of the test epitaxial wafer is taken out under the same conditions (see Table 1). Samples 1 and 2 were plated with an ITO layer of about 1500 angstroms under the same pre-process conditions, a Cr/Pt/Au electrode of about 2500 angstroms under the same conditions, and a protective layer of SiO under the same conditions2About 500 angstroms, the sample was then ground and cut into 762 μm (30mi 30mil) chip particles under the same conditions, and then 100 dies were picked up from each of sample 1 and sample 2 at the same location and packaged into a white LED under the same packaging process. And (3) carrying out photoelectric performance test: the photoelectric properties of the sample 1 and the sample 2 were tested under the condition of a driving current of 350mA by the same LED point testing machine. See table 2.
TABLE 1 sample 1 and sample 2 extensive XRD test data
As can be seen from table 1, the XRD102 surface value of the sample (sample 2) produced by the method provided by the present invention is reduced, which indicates that the sample material produced by the method provided by the present invention has few defects and the crystal quality of the epitaxial layer is significantly improved.
Table 2 photoelectric test data of sample 1 and sample 2LED tester
As can be seen from Table 2, the sample LED manufactured by the method provided by the invention has better photoelectric property, high brightness, low voltage, small leakage current and good antistatic capability, thus reducing the growth defects of epitaxial materials and improving the crystal quality of the epitaxial layer.
Compared with the prior art, the graphene-based LED epitaxial growth method has the advantages that the following effects are achieved:
according to the GaN-based LED epitaxial growth method based on ZnO, the high-quality ZnO film is grown on the sapphire substrate by utilizing the magnetron sputtering method to serve as the buffer layer, and the GaN and the ZnO have the same crystal structure (wurtzite structure) and have small lattice mismatch and thermal mismatch with the ZnO, so that defects caused by lattice mismatch and thermal mismatch can be avoided in principle, the problem of heteroepitaxial growth of defects induced by lattice mismatch is solved, the epitaxial growth defects of the LED are reduced, the epitaxial crystal quality is improved, and the photoelectric performance of the LED is improved. In addition, the ZnO thin film material has good thermal stability and chemical stability, the preparation temperature is much lower than that of a GaN material, and the defects generated by high-temperature preparation can be greatly reduced. In addition, the ZnO film is adopted to replace the traditional method of growing the low-temperature buffer layer GaN, growing the 3D GaN layer and growing the 2D GaN layer, so that the MOCVD growth time is shortened by over 50 minutes, and the production efficiency can be improved.
Since the method has already been described in detail in the embodiments of the present application, the expanded description of the structure and method corresponding parts related to the embodiments is omitted here, and will not be described again. The description of specific contents in the structure may refer to the contents of the method embodiments, which are not specifically limited herein.
The foregoing description shows and describes several preferred embodiments of the present application, but as aforementioned, it is to be understood that the application is not limited to the forms disclosed herein, but is not to be construed as excluding other embodiments and is capable of use in various other combinations, modifications, and environments and is capable of changes within the scope of the application as described herein, commensurate with the above teachings, or the skill or knowledge of the relevant art. And that modifications and variations may be effected by those skilled in the art without departing from the spirit and scope of the application, which is to be protected by the claims appended hereto.

Claims (10)

1. A GaN-based LED epitaxial growth method based on ZnO is characterized by comprising the following steps:
putting a sapphire substrate into a magnetron sputtering reaction cavity, using high-purity metal zinc as a target material, and growing a ZnO film with the thickness of 200-260nm on the sapphire substrate for 20-30min under the conditions that the temperature of the cavity is 350-400 ℃, the pressure of the reaction cavity is 1-2Pa, the radio-frequency power is 100-150W, 500-800sccm oxygen and 1000-1600sccm argon are introduced, and the flow rate ratio of the oxygen to the argon is controlled to be 1: 2;
putting the sapphire substrate on which the ZnO film grows into an MOCVD reaction chamber, and growing an N-type GaN layer, an active layer MQW, a P-type AlGaN layer and a P-type GaN layer which are doped with Si in sequence;
introducing N of 100L/min-150L/min at the temperature of 700-800 DEG C2Keeping the temperature for 20-30min under the condition of (1), and cooling along with the furnace.
2. The ZnO-based GaN-based LED epitaxial growth method according to claim 1, wherein,
introducing 50-90L/min H at 1000-1100 deg.C and reaction cavity pressure of 150-300mbar240-60L/min NH3TMGa of 200-300sccm and SiH of 20-50sccm4Under the conditions of (1), growing a Si-doped N-type GaN layer with a thickness of 2-4 μm and a Si doping concentration of 5X 1018atoms/cm3-1×1019atoms/cm3。
3. The ZnO-based GaN-based LED epitaxial growth method according to claim 1, wherein,
introducing 50-100L/min H at 900-1100 deg.C and reaction cavity pressure of 100-200mbar2Processing the sapphire substrate for 5-10 min under the condition (1).
4. The ZnO-based GaN-based LED epitaxial growth method according to claim 1, wherein,
the active layer MQW comprises: alternatively grown InxGa(1-x)The N well layer and the GaN barrier layer are controlled to be 10-15 in alternating period.
5. The epitaxial growth method of GaN-based LED based on ZnO according to claim 4, characterized in that,
introducing 50-90L/min N at 700-750 deg.C and 300-400 mbar in reaction cavity240-60L/min NH3Growing the In with the thickness of 3nm to 4nm under the conditions of TMGa of 10 to 50sccm and TMIn of 1000 to 2000sccmxGa(1-x)An N-well layer, wherein,
x＝0.15-0.25，
in doping concentration of 1 × 1020atoms/cm3-3×1020atoms/cm3。
6. The epitaxial growth method of GaN-based LED based on ZnO according to claim 4, characterized in that,
introducing 50-90L/min N at 800-850 deg.C240-60L/min NH3And growing the GaN barrier layer with the thickness of 10nm-15nm under the condition of TMGa of 10-50 sccm.
7. The ZnO-based GaN-based LED epitaxial growth method according to claim 1, wherein,
introducing 50-90L/min N at 850-950 deg.C and reaction cavity pressure of 200r-400mbar240-60L/min NH3And growing the P-type AlGaN layer doped with Mg under the condition of TMGa of 50-100 sccm.
8. The ZnO-based GaN-based LED epitaxial growth method according to claim 7, wherein,
the thickness of the Mg-doped P-type AlGaN layer is 50nm-100 nm; wherein,
al doping concentration of 1X 1020atoms/cm3-3×1020atoms/cm3；
Mg doping concentration of 5 x 1018atoms/cm3-1×1019atoms/cm3。
9. The ZnO-based GaN-based LED epitaxial growth method according to claim 1, wherein,
introducing 50-90L/min N at the high temperature of 950-1000 ℃ and the pressure of a reaction cavity of 200-600mbar240-60L/min NH3And growing the P-type GaN layer doped with Mg under the condition of TMGa of 50-100 sccm.
10. The ZnO-based GaN-based LED epitaxial growth method according to claim 9, wherein,
the thickness of the Mg-doped P-type GaN layer is 100nm-300nm, wherein,
mg doping concentration is 1X 1019atoms/cm3-1×1020atoms/cm3。
CN201711024142.1A 2017-10-27 2017-10-27 A kind of GaN base LED epitaxial growth methods based on ZnO Pending CN107799634A (en)

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